TWI702405B - Photosensitive thin film transistor and electromagnetic wave detection device - Google Patents
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Abstract
一種光敏式薄膜電晶體及電磁波檢測裝置,該光敏式薄膜電晶體形成於一基材上,並包含一閘極電極、一絕緣層、一通道層、一汲極金屬電極,以及一源極金屬電極。該閘極電極包括一閘極金屬電極與一CIS系閘極p型半導體層,該閘極p型半導體層為CuIn xGa (1-x)Se yS (1-y),x與y皆為0到1之任意實數,且該閘極p型半導體層兼具第一光吸收層功能。該通道層為n型ZnO或n型ITO,並兼具第二光吸收層功能。藉由該閘極p型半導體層改善近紅外光之光譜響應,該通道層改善紫外光光譜響應,而且該光敏式薄膜電晶體的結構簡單,易於製作。 A photosensitive thin film transistor and an electromagnetic wave detection device. The photosensitive thin film transistor is formed on a substrate and includes a gate electrode, an insulating layer, a channel layer, a drain metal electrode, and a source metal electrode. The gate electrode includes a gate metal electrode and a CIS-based gate p-type semiconductor layer, the gate p-type semiconductor layer is CuIn x Ga (1-x) Se y S (1-y) , x and y are both It is any real number from 0 to 1, and the gate p-type semiconductor layer also functions as a first light absorbing layer. The channel layer is n-type ZnO or n-type ITO, and has the function of the second light absorption layer. The p-type gate semiconductor layer improves the spectral response of near-infrared light, the channel layer improves the spectral response of ultraviolet light, and the photosensitive thin film transistor has a simple structure and is easy to manufacture.
Description
本發明是有關於一種薄膜電晶體及電磁波檢測裝置,特別是指一種用於感測入射電磁波波長範圍小於2.5μm的光敏式薄膜電晶體及電磁波檢測裝置。The invention relates to a thin film transistor and an electromagnetic wave detection device, in particular to a photosensitive thin film transistor and an electromagnetic wave detection device used for sensing incident electromagnetic waves with a wavelength range of less than 2.5 μm.
可見光波段的電磁波檢測裝置已經被廣泛應用在消費性電子產品當中,例如智慧型手機所配置的攝影鏡頭模組,其內的感測器為互補式金屬氧化物半導體(CMOS)影像偵測裝置,乃是以矽晶圓積體電路的生產流程,所製造出基於結晶矽CMOS電路來驅動並掃描的PN接面光二極體陣列(Photodiode Array)感測元件。CMOS光二極體陣列的生產製作相容於矽積體電路的製程,具有成本低、功率損耗低、掃描率高、光譜響應寬等眾多優點。Electromagnetic wave detection devices in the visible light band have been widely used in consumer electronic products, such as the camera lens module of a smart phone. The sensor in it is a complementary metal oxide semiconductor (CMOS) image detection device. Based on the production process of silicon wafer integrated circuits, PN junction photodiode array (Photodiode Array) sensing elements driven and scanned based on crystalline silicon CMOS circuits are manufactured. The production of CMOS photodiode arrays is compatible with the manufacturing process of silicon integrated circuits, and has many advantages such as low cost, low power loss, high scanning rate, and wide spectral response.
除此之外,在完成CMOS光二極體陣列的製程之後,可以在各別的光二極體感測像素上配置紅、藍、綠等彩色濾光片,以及配置微透鏡等元件,搭配外部的數位影像處理電路,進而實現低雜訊、多彩色灰階,以及高解析度等特性。因此,在市場需求的強烈驅動下,CMOS影像偵測裝置已被普遍應用在數位相機、智慧型手機、電腦用網路攝影模組,以及物聯網傳感器等產品上。In addition, after the completion of the CMOS photodiode array manufacturing process, red, blue, and green color filters can be arranged on the respective photodiode sensing pixels, as well as microlenses and other components, with external Digital image processing circuit to achieve low noise, multi-color grayscale, and high resolution characteristics. Therefore, driven by strong market demand, CMOS image detection devices have been widely used in digital cameras, smart phones, computer network camera modules, and IoT sensors.
上述結晶矽CMOS的光二極體陣列主要應用在可見光成像的感測技術,對於小於400nm的紫外光波段,結晶矽本質上已無良好的光譜響應。除此之外,結晶矽材料在700nm到1100nm近紅外光波段中有光譜響應,然而為了避免紅外光雜訊干擾到可見光成像,習知技術會在CMOS影像偵測裝置攝影鏡頭模組內配置紅外光濾波片,以過濾波長大於700nm的紅外光雜訊。事實上,由於結晶矽材料屬於非直接能隙(Indirect Band Gap)半導體,因此基於結晶矽之PN接面光二極體的厚度必須較厚,才能吸收更多的光子能量;然而,卻也因此讓近紅外光所激發的載子更容易在較厚的二極體結構內部發生電子電洞再結合。The above-mentioned crystalline silicon CMOS photodiode array is mainly used in the sensing technology of visible light imaging. For the ultraviolet light band less than 400nm, crystalline silicon has no good spectral response essentially. In addition, crystalline silicon material has a spectral response in the near-infrared light band from 700nm to 1100nm. However, in order to avoid infrared light noise from interfering with visible light imaging, conventional technology will configure infrared in the camera lens module of the CMOS image detection device Optical filter to filter infrared light noise with wavelength greater than 700nm. In fact, because the crystalline silicon material belongs to the indirect band gap (Indirect Band Gap) semiconductor, the thickness of the PN junction photodiode based on crystalline silicon must be thicker to absorb more photon energy; however, it also allows The carriers excited by near-infrared light are more likely to recombine electrons and holes in the thicker diode structure.
因此,結晶矽的光二極體在700nm到1100nm波段受限於表面的載子結合、較少的載子躍遷、入射窗口層(受光面)的光反射等種種原因,在本質上不易應用在近紅外光波段的電磁波檢測上。近年來,雖然背向式CMOS影像感測器改採用非晶矽的PIN光二極體,可以藉由更薄的PIN厚度(大約2μm)來實現光二極體功能;然而,非晶矽僅在可見光波段有光譜響應,因此也不適用於近紅外光波段的電磁波檢測應用。Therefore, the photodiode of crystalline silicon in the 700nm to 1100nm wavelength band is limited by the surface carrier binding, fewer carrier transitions, and light reflection from the incident window layer (light-receiving surface). It is inherently difficult to apply in near Electromagnetic wave detection in infrared light band. In recent years, although back-facing CMOS image sensors have changed to amorphous silicon PIN photodiodes, the function of the photodiode can be realized by a thinner PIN thickness (approximately 2μm); however, amorphous silicon is only used in visible light. The band has a spectral response, so it is not suitable for electromagnetic wave detection applications in the near-infrared light band.
近紅外光波段的感測可以應用在有機分子檢測與生醫檢測等技術上。在有機分子檢測應用上,藉由近紅外光波段的感測可以檢測飲食內的成分與含量;在生醫檢測上,應用在血氧檢測以及螢光標靶的定位偵測上。Sensing in the near-infrared light band can be applied to technologies such as organic molecular detection and biomedical detection. In the application of organic molecular detection, it is possible to detect the ingredients and content in the diet through the detection of near-infrared light band; in the biomedical detection, it is used in the detection of blood oxygen and the positioning of fluorescent cursor targets.
在生醫檢測的應用上,面板式的電磁波檢測裝置有助於對一待測物進行全貌式的影像重建。以台灣專利證書號I415283、I496277 、I500926、I570425等4件專利為例,這些專利記載有X光平板檢測器,乃是基於薄膜電晶體(TFT)驅動並掃描非晶矽PIN光二極體陣列以實現平面式的X光感測。由於非晶矽的光譜響應僅在可見光波段,因此必須在PIN光二極體陣列的受光面配置一波長轉換薄膜(例如碘化銫薄膜),可將穿透過待測物之X光轉換至可見光波段,因此實現將X光影像以可見光訊號入射至所述PIN光二極體陣列,並透過TFT的驅動與掃描,搭配外部之數位影像處理電路,重建出待測物X光影像的二維全貌。在過去十年當中,此類X射線平板偵測裝置迅速取代了習知的X光底片拍攝,進而成為普及的醫療檢測設備。In the application of biomedical testing, the panel-type electromagnetic wave detection device is helpful for the full-view image reconstruction of a test object. Take Taiwan Patent Certificate No. I415283, I496277, I500926, I570425 and other 4 patents as examples. These patents record X-ray flat panel detectors, which are based on thin film transistors (TFT) driving and scanning amorphous silicon PIN photodiode arrays. Realize planar X-ray sensing. Since the spectral response of amorphous silicon is only in the visible light band, a wavelength conversion film (such as cesium iodide film) must be placed on the light-receiving surface of the PIN photodiode array, which can convert the X-rays that have passed through the object to the visible light band Therefore, it is realized that the X-ray image is incident on the PIN photodiode array with a visible light signal, and the two-dimensional overall view of the X-ray image of the object to be measured is reconstructed through the driving and scanning of the TFT and the external digital image processing circuit. In the past ten years, this type of X-ray flat panel detection device quickly replaced the conventional X-ray film shooting, and then became a popular medical detection equipment.
然而,由於非晶矽PIN光二極體相對低的光電轉換效率,不適合額外在該平板裝置的受光面配置相位調變膜層,使得該平板偵測裝置應用在生醫檢測上,尚無法提供待測物的三維影像資訊,且其影像解析度尚受限於TFT製程的線寬,無法以相位調變來提高其解析度。However, due to the relatively low photoelectric conversion efficiency of the amorphous silicon PIN photodiode, it is not suitable to additionally dispose a phase modulation film on the light-receiving surface of the flat-panel device, which makes the flat-panel detection device applied to biomedical inspections and cannot yet provide The three-dimensional image information of the measured object, and its image resolution is still limited by the line width of the TFT process, and the phase modulation cannot be used to improve its resolution.
況且,相較於結晶矽PN二極體結構,由於所述非晶矽PIN光二極體的內建電場很弱,且非晶矽薄膜內含太多的懸浮鍵結(Dangling Bond),使得非晶矽PIN的光電轉換效率難以突破8%,並且在多次光照後還會發生效率劣化才趨於穩定的現象(Staebler–Wronski Effect);也因為非晶矽PIN光二極體的低光電轉換效率,在此類平板電磁波檢測裝置的受光面,不適合配置會影響透光量的濾波片或波長轉換膜層,因此非晶矽PIN光二極體的應用範圍受限。Moreover, compared with the structure of crystalline silicon PN diode, the built-in electric field of the amorphous silicon PIN photodiode is very weak, and the amorphous silicon film contains too many dangling bonds, which makes non-crystalline silicon The photoelectric conversion efficiency of crystalline silicon PIN is difficult to exceed 8%, and the phenomenon that the efficiency deteriorates after multiple illuminations (Staebler-Wronski Effect); also because of the low photoelectric conversion efficiency of amorphous silicon PIN photodiodes On the light-receiving surface of this type of flat electromagnetic wave detection device, it is not suitable to configure filters or wavelength conversion films that affect the amount of light transmission, so the application range of amorphous silicon PIN light diodes is limited.
除此之外,基於TFT驅動並掃描非晶矽PIN光二極體陣列之生產製造工藝相當複雜,在製程中需要超過12道光罩。因應生醫感測等龐大的市場需求,如何簡化陣列中的感測像素結構、並維持感測像素高的光電轉換效率,以期藉由高解析度精準地重建出自紫外光到近紅外光的影像全貌,為相當重要的課題。In addition, the manufacturing process based on TFT driving and scanning amorphous silicon PIN photodiode array is quite complicated, and more than 12 masks are required in the manufacturing process. In response to the huge market demand for biomedical sensing, how to simplify the sensor pixel structure in the array and maintain the high photoelectric conversion efficiency of the sensor pixels in order to accurately reconstruct the image from ultraviolet light to near-infrared light with high resolution The whole picture is a very important subject.
因此,針對波段範圍小於2.5μm波長(包含紫外光、可見光、近紅外光波段)的感測像素陣列與電磁波檢測裝置,有至少以下幾點必須改進:(1)改善對於紫外光與近紅外光之光譜響應;(2)藉由適當的結構改良,簡化生產製造工藝與實現大面積全貌式電磁波檢測;(3)改善感測像素陣列的光電轉換效率,使得即使在檢測裝置上設置額外的相位調變元件,或是濾波片、波長轉換膜層等波長調變元件,依然能維持檢測功能所要求的敏感度。Therefore, for sensing pixel arrays and electromagnetic wave detection devices with a wavelength range of less than 2.5μm (including ultraviolet light, visible light, and near-infrared light wavelengths), at least the following points must be improved: (1) Improvements to ultraviolet light and near-infrared light (2) Simplify the manufacturing process and realize large-area full-view electromagnetic wave detection through appropriate structural improvements; (3) Improve the photoelectric conversion efficiency of the sensing pixel array, so that even if additional phases are set on the detection device Modulation components, or wavelength modulation components such as filters and wavelength conversion films, can still maintain the sensitivity required by the detection function.
因此,本發明之目的,即在提供一種能克服先前技術的至少一個缺點的光敏式薄膜電晶體及電磁波檢測裝置。Therefore, the purpose of the present invention is to provide a photosensitive thin film transistor and electromagnetic wave detection device that can overcome at least one of the disadvantages of the prior art.
於是,本發明光敏式薄膜電晶體,形成於一基材上,並包含一閘極電極、一絕緣層、一通道層、一位於該通道層上的汲極金屬電極,及一位於該通道層上並與該汲極金屬電極間隔的源極金屬電極。Therefore, the photosensitive thin film transistor of the present invention is formed on a substrate, and includes a gate electrode, an insulating layer, a channel layer, a drain metal electrode on the channel layer, and a drain metal electrode on the channel layer The source metal electrode above and spaced from the drain metal electrode.
該閘極電極由鄰近而遠離該基材依序包括一閘極金屬電極與一閘極p型半導體層,該閘極p型半導體層為CuIn xGa (1-x)Se yS (1-y),其中x為0到1之任意實數,y為0到1之任意實數,且該閘極p型半導體層兼具第一光吸收層的功能。 The gate electrode sequentially includes a gate metal electrode and a gate p-type semiconductor layer from being adjacent to and away from the substrate. The gate p-type semiconductor layer is CuIn x Ga (1-x) Se y S (1- y) , where x is any real number from 0 to 1, and y is any real number from 0 to 1, and the gate p-type semiconductor layer also functions as the first light absorbing layer.
該絕緣層位於該閘極p型半導體層上方,該絕緣層為SiO 2或Si 3N 4。該通道層位於該絕緣層上方,該通道層為n型ZnO或n型ITO,並且兼具第二光吸收層的功能,且該通道層的光吸收波段不同於該閘極p型半導體層的光吸收波段。 The insulating layer is located above the gate p-type semiconductor layer, and the insulating layer is SiO 2 or Si 3 N 4 . The channel layer is located above the insulating layer, the channel layer is n-type ZnO or n-type ITO, and has the function of a second light absorption layer, and the light absorption band of the channel layer is different from that of the gate p-type semiconductor layer Light absorption band.
本發明電磁波檢測裝置,包含一基材,及一形成於該基材上的薄膜陣列單元。該薄膜陣列單元包括一朝向該基材的背光面、一相反於該背光面的受光面,以及MxN個感測像素,其中M、N皆為正整數,每一感測像素包括一如上述的光敏式薄膜電晶體,該光敏式薄膜電晶體用於掃描驅動與傳輸數據,以及用於檢測電磁波訊號。The electromagnetic wave detection device of the present invention includes a substrate and a thin film array unit formed on the substrate. The thin film array unit includes a backlight surface facing the substrate, a light-receiving surface opposite to the backlight surface, and MxN sensing pixels, where M and N are both positive integers, and each sensing pixel includes the above The photosensitive thin film transistor is used for scanning drive and data transmission, as well as for detecting electromagnetic wave signals.
本發明之功效在於:藉由該光敏式薄膜電晶體的CIS系閘極p型半導體層,兼具第一光吸收層的功能,改善該薄膜陣列單元的近紅外光之光譜響應,並藉由n-ZnO或n-ITO之通道層兼具第二光吸收層的功能,改善薄膜陣列單元的紫外光光譜響應,從而提升整體的光電轉換效率。而且該光敏式薄膜電晶體兼具掃描驅動、傳輸數據以及檢測電磁波訊號的功能,極大程度簡化了感測像素的結構,使該薄膜陣列單元易於製作,而且能實現大面積全貌式電磁波檢測。更進一步地,正因為本發明提升了光電轉換效率,因此即使在薄膜陣列單元的受光面額外配置一相位調變單元或一波長調變單元,也不會影響檢測靈敏度,還可透過該相位調變單元實現三維資訊或是高解析度的影像重建,以及透過該波長調變單元實現電磁波檢測裝置的波長多工功能。The effect of the present invention is that the CIS-based gate p-type semiconductor layer of the photosensitive thin film transistor has the function of the first light absorbing layer to improve the near-infrared light spectral response of the thin film array unit, and by The channel layer of n-ZnO or n-ITO also has the function of the second light absorption layer, which improves the UV spectrum response of the thin film array unit, thereby enhancing the overall photoelectric conversion efficiency. In addition, the photosensitive thin film transistor has the functions of scanning driving, data transmission and electromagnetic wave signal detection, which greatly simplifies the structure of the sensing pixel, makes the thin film array unit easy to manufacture, and can realize large-area full-view electromagnetic wave detection. Furthermore, because the present invention improves the photoelectric conversion efficiency, even if a phase modulation unit or a wavelength modulation unit is additionally arranged on the light-receiving surface of the thin film array unit, the detection sensitivity will not be affected. The variable unit realizes three-dimensional information or high-resolution image reconstruction, and realizes the wavelength multiplexing function of the electromagnetic wave detection device through the wavelength modulation unit.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.
參閱圖1、2,本發明電磁波檢測裝置之一第一實施例,包含一基材1,及一形成於該基材1上的薄膜陣列單元2。Referring to FIGS. 1 and 2, a first embodiment of the electromagnetic wave detection device of the present invention includes a
該基材1例如但不限於玻璃基材、金屬箔軟性基材、聚對苯二甲酸乙二酯(PET),或是聚醯亞胺(PI)軟性基材。The
該薄膜陣列單元2形成於該基材1上,並包括一朝向該基材1的背光面21、一相反於該背光面21的受光面22,以及MxN個感測像素3,其中M、N皆為正整數。該背光面21與受光面22為該等感測像素3的頂面與底面搭配形成。較佳地,該薄膜陣列單元2可偵測的電磁波波長範圍包含紫外光、可見光與近紅外光波段。The thin
參閱圖2、3,所述MxN個感測像素3呈陣列式排列,在第m列的N個感測像素3共用一閘極驅動線301,在第n行的M個感測像素3共用一資料掃描線302,所述m為1到M的任意正整數,而n為1到N的任意正整數。2 and 3, the
每一感測像素3包括一光敏式薄膜電晶體 (TFT)4,例如一光敏式場效電晶體(FET),並包括一閘極、一源極與一汲極。該光敏式薄膜電晶體4由該閘極驅動線301控制,該汲極連接至像素陣列共用的該資料掃描線302。所述源極連接至所有M×N個感測像素3共用之一操作偏壓線。圖3示意的單一個感測像素3之等效電路圖,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,例如單一感測像素3中還可包括數個非光敏式薄膜電晶體,以在該感測像素3內部實現訊號放大功能,亦或是考量到外部數位訊號處理之時序而額外配置的電阻及電容等等,此皆仍屬本發明涵蓋之範圍。Each
參閱圖4,接著說明場效電晶體形態的該光敏式薄膜電晶體4的膜層堆疊結構,包括一形成於該基材1上的閘極電極41、一位於該閘極電極41上方的絕緣層42、一位於該絕緣層42上方的通道層43,以及位於該通道層43上的一汲極金屬電極44與一源極金屬電極45。Referring to FIG. 4, the film layer stack structure of the photosensitive
其中,該閘極電極41由鄰近而遠離該基材1依序包括一閘極金屬電極411與一閘極p型半導體層412。該閘極金屬電極411可以為金屬鉬(Mo),或是以鉬合金為主的單層或多層膜層結構。該閘極p型半導體層412為銅銦硒(CIS)系材料,除了具備閘極電極的功能外,還兼具第一光吸收層的功能。所述銅銦硒系材料,可以為銅、銦、鎵、硒所形成的三元或四元化合物薄膜,例如該閘極p型半導體層412可包含銅銦硒,或銅銦鎵硒,或銅鎵硒,薄膜厚度大約0.5μm至1.5μm。該閘極p型半導體層412的材料以化學式來表示為:CuIn
xGa
(1-x)Se
yS
(1-y),其中x和y皆為0到1之任意實數。該絕緣層42為二氧化矽(SiO
2)或氮化矽(Si
3N
4),厚度大約0.1μm到0.2μm。
The
該通道層43除了具有TFT之通道功能外,還兼具第二光吸收層的功能,且該通道層43的光吸收波段不同於該閘極p型半導體層412的光吸收波段。補充說明的是,所述第一光吸收層與第二光吸收層的「第一」、「第二」,並非用於限定任何順序,只是為了區分該通道層43與該閘極p型半導體層412的光吸收波段不同。該通道層43為n型半導體製成,具體為n型氧化鋅(n-ZnO)或n型氧化銦錫(n-ITO)。該汲極金屬電極44與該源極金屬電極45彼此間隔且位於該通道層43表面,該汲極金屬電極44與該源極金屬電極45可以為金屬鋁(Al),或是以鋁合金為主的單層或多層膜層結構。In addition to the channel function of the TFT, the
前述說明每一光敏式薄膜電晶體4的膜層堆疊結構與材料,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍。此外,在所述單一感測像素3受光面(即,該通道層43上方與源極金屬電極45或汲極金屬電極44上方)配置保護層或是抗靜電干擾層,或者,在閘極金屬電極411與該CIS系閘極p型半導體層412之間配置p型重摻雜CuIn
xGa
(1-x)Se
yS
(1-y)(簡稱p
+-CIS系)膜層,亦或是考量到外部數位訊號處理之時序而額外配置的電阻及電容等等,皆仍屬本發明涵蓋之範圍內。
The foregoing description of the layer stack structure and materials of each photosensitive
參閱圖1、3、4,本發明使用時,包含紫外光、可見光與近紅外光波段的電磁波訊號是經由該薄膜陣列單元2的受光面22由上而下入射至該薄膜陣列單元2中。該閘極驅動線301以固定之幀速率(Frame Rate)將該光敏式薄膜電晶體4操作於一打開(on)模式。當該光敏式薄膜電晶體4偵測到一待測物的電磁波訊號,打開之光敏式薄膜電晶體4即可將光電流數據傳輸到例如一數位影像處理電路(圖未示),進而可分析重建出該待測物的二維全貌。其中,CIS系閘極p型半導體層412作為第一光吸收層,主要針對可見光與近紅外光波段的訊號產生光電流,而n型ZnO或n型ITO通道層43作為第二光吸收層,則是針對紫外光波段的訊號產生光電流,從而實現包含紫外光、可見光與近紅外光波段的影像感測功能。Referring to FIGS. 1, 3 and 4, when the present invention is used, electromagnetic wave signals including ultraviolet light, visible light and near-infrared light are incident into the thin
本發明此種可偵測紫外光、可見光波段與近紅外光波段的電磁波檢測裝置,可應用於智慧型手機之鏡頭、數位相機、電腦用網路攝影模組、物聯網傳感器等產品上。另外,紫外光、近紅外光波段的感測可以應用在有機分子檢測與生醫檢測等技術上。The electromagnetic wave detection device capable of detecting ultraviolet light, visible light waveband and near-infrared light waveband of the present invention can be applied to the lens of smart phone, digital camera, computer network camera module, IoT sensor and other products. In addition, the sensing of ultraviolet light and near-infrared light can be applied to organic molecule detection and biomedical detection technology.
綜上所述,藉由結構創新的該光敏式薄膜電晶體4,兼具掃描驅動、傳輸數據以及偵測電磁波訊號的功能,故以該光敏式薄膜電晶體4取代以往採用結晶矽PN光二極體、或非晶矽PIN光二極體搭配CMOS電路,或是取代習知以TFT掃描驅動的非晶矽PIN感測薄膜陣列,本發明優點為,因為CIS系(包含銅銦硒(CIS)與銅銦鎵硒(CIGS))薄膜屬於直接能隙材料,CIS系閘極p型半導體層412厚度遠小於結晶矽PN光二極體厚度,使該閘極p型半導體層412可以在近紅外光波段有較佳的量子效率。此外,在相同面積之下,CIS系閘極p型半導體層412在近紅外光的光譜響應優於非晶矽PIN薄膜,其光電轉換效率是一般非晶矽PIN光二極體的光電轉換效率至少2倍以上。目前CIS薄膜的光電轉換效率之世界紀錄已達到22.9%。因此,本發明採用CIS系閘極p型半導體層412,搭配n-ZnO或n-ITO通道層43對紫外光之光譜響應佳,可以提升薄膜陣列單元2的近紅外光和紫外光之光譜響應以及光電轉換效率。In summary, with the innovative structure of the photosensitive
除此之外,相較於習知以TFT掃描驅動的非晶矽PIN感測薄膜陣列在生產製程需要超過12道光罩,本發明之光敏式薄膜電晶體4本身即為感光元件,無須搭配額外之感光二極體,因此極大程度地簡化了生產製程工藝,可減少數道光罩製程,使該薄膜陣列單元2易於製作,並且可實現大面積全貌式電磁波檢測。In addition, compared to the conventional amorphous silicon PIN sensing thin film array driven by TFT scanning, which requires more than 12 masks in the production process, the photosensitive
參閱圖5,本發明電磁波檢測裝置的一第二實施例,與該第一實施例的結構大致相同,不同處在於,本第二實施例還包含一位於該薄膜陣列單元2的該受光面22的波長調變單元7,該波長調變單元7用於轉換入射而來的電磁波波長,使轉換後的電磁波波長成為該薄膜陣列單元2可檢測的波段範圍。包含紫外光、可見光與近紅外光波段的電磁波訊號乃是由上而下入射,依序進入該波長調變單元7與該薄膜陣列單元2。Referring to FIG. 5, a second embodiment of the electromagnetic wave detection device of the present invention has substantially the same structure as the first embodiment, except that the second embodiment further includes a light-receiving
該波長調變單元7可以為一能將入射電磁波的波段轉換至另一波段的波長轉換膜層,該波長轉換膜層能將波長1.1μm到2.5μm的近紅外入射光轉換成波長小於1.1μm的光訊號,例如:LiYF
4:Er
3+奈米結晶材料,或是經由帶隙工程(Bandgap Engineering)設計並官能化的奈米碳結構材料。雖然這類由低能量電磁波轉換到高能量電磁波的“上轉換 (Up-conversion)”材料,其波長轉換效率不高,但因本發明採用包含有CIS系閘極p型半導體層412(圖4)的薄膜陣列單元2,CIS系閘極p型半導體層412(圖4)的光電轉換效率是已知非晶矽PIN光二極體的光電轉換效率至少兩倍以上,因此本發明仍可配合採用所述上轉換材料來作為該波長調變單元7,以檢測經過波長轉換,且高訊號雜訊比(Signal-to-Noise Ratio)的電磁波訊號。
The
該波長調變單元7亦可採用由高能量電磁波轉換到低能量電磁波的“下轉換 (Down-conversion)”材料,以將高能量電磁波訊號轉換到CIS光譜響應量子效率較高的波段內。舉X光平板檢測裝置的應用為例,該波長調變單元7較佳的實施例為碘化銫(CsI)薄膜,搭配本發明該CIS系閘極p型半導體層412(圖4)的光電轉換效率是習知非晶矽PIN光二極體的光電轉換效率至少兩倍以上,因此本第二實施例在X光檢測這類需要波長轉換的應用上,可大幅降低檢測過程中所需使用的X射線輻射強度。The
參閱圖3、4、5,該波長調變單元7的另一實施態樣,包括數個呈陣列式排列的濾波片,該等濾波片依檢測功能需要,分別配置於該等感測像素3的受光面上。例如:已知的生醫檢測用螢光標靶之發光波長範圍,可大略區分為波長自650nm到950nm之第一個檢測波段,以及波長自1000nm到1350nm之第二個檢測波段。當本發明電磁波檢測裝置的功能必須實現能夠同時偵測所述兩個螢光標靶檢測波段時,則該薄膜陣列單元2的該等波長調變單元7即設計為針對這兩個波段的帶通濾波片(Bandpass Filter),這兩種波段的帶通濾波片可以間隔穿插配置於本發明所述M×N個感測像素3上。上述帶通濾波片形式的波長調變單元7,是針對波長小於2.5μm的入射電磁波來作調變。3, 4, and 5, another implementation aspect of the
除此之外,由於CIS系閘極p型半導體層412的光電轉換效率是習知非晶矽PIN光二極體的光電轉換效率至少兩倍以上,因此能使結合有本發明之CIS系閘極p型半導體層412的平板檢測裝置維持高敏感度,所以本發明的波長調變單元7可不限於單一個,也可以有數個。例如,圖6所示的變化態樣中,該薄膜陣列單元2的受光面22上設置有兩個上下層疊的所述波長調變單元7,下方的該波長調變單元7包含濾波片,上方的該波長調變單元7包含波長轉換膜層。於實施時該濾波片與波長轉換膜層的順序也可以調換。又或者,該兩波長調變單元7皆為濾波片,只是過濾的波段不同。又或者,該兩波長調變單元7皆為波長轉換膜層,且轉換後得到的波段不同。In addition, since the photoelectric conversion efficiency of the CIS-based gate p-
參閱圖7,本發明電磁波檢測裝置的一第三實施例,與該第一實施例的結構大致相同,不同處在於:本第三實施例還包含一位於該薄膜陣列單元2的該受光面22的相位調變單元8。包含紫外光、可見光與近紅外光波段的電磁波訊號乃是由上而下入射,依序進入該相位調變單元8與該薄膜陣列單元2。Referring to FIG. 7, a third embodiment of the electromagnetic wave detection device of the present invention has substantially the same structure as the first embodiment, except that the third embodiment further includes a light-receiving
所述相位調變單元8,是指採用透光或半透光的膜片材料製作出空間變化的微結構,以調變電磁波入射到各個光敏式薄膜電晶體4(圖4)後的空間光程差,達到調變相位的功能。該相位調變單元8可以為折射率具周期性變化之微結構膜層,包含但是不限於:微透鏡、相位光柵、或是編碼孔徑(Coded Aperture)。接著分別說明此三種不同實施態樣的相位調變單元8。The
其中,該相位調變單元8採用微透鏡時,主要是達到聚光成像的功能,因此以整個電磁波檢測裝置而言,該相位調變單元8包含數個呈陣列式排列的微透鏡,微透鏡陣列的空間週期與感測像素3(圖2)陣列的空間週期完全相同,實現一對一的聚光成像。Wherein, when the
該相位調變單元8採用相位光柵時,可檢測一待檢測物的三維資訊。例如,可將本發明電磁波檢測裝置應用於偵測近紅外光波段(>650nm)的生醫檢測,而所對應之相位光柵屬於微米線寬加工之精度,易於使用現行半導體加工技術,或是習知光學微結構加工技術(例如:雷射雕刻、或是微奈米壓模等技術)來實現。應用相位光柵乃是將被相位光柵調變(編碼)過的待測物影像之三維資訊,使用配合該相位光柵設計規則的演算法,藉由電腦將待測物的三維影像重建(解碼)出來。When the
該相位調變單元8採用編碼孔徑(即編碼過的針孔陣列)時,可用於改變電磁波之光程差,以提高整個電磁波檢測裝置的空間解析度。同樣地,所對應的編碼孔徑尺度一樣屬於微米線寬加工之精度,易於使用現行半導體加工技術、或是習知光學微結構加工技術(例如:雷射雕刻、或是微奈米壓模等技術)來實現。When the
本發明的相位調變單元8可不限於單一個,也可以有數個。例如,圖8所示的變化態樣中,該薄膜陣列單元2的受光面22上設置有兩個上下層疊的所述相位調變單元8。The
參閱圖9,本發明電磁波檢測裝置的一第四實施例,與該第二實施例(圖5)的結構大致相同,不同處在於:本第四實施例還包含位於該波長調變單元7上的該相位調變單元8,本第四實施例的相位調變單元8相同於該第三實施例(圖7)的相位調變單元8。包含紫外光、可見光與近紅外光波段的電磁波訊號乃是由上而下入射,依序進入該相位調變單元8、該波長調變單元7與該薄膜陣列單元2。透過同時設置有該波長調變單元7與該相位調變單元8,可結合兩者的功能與優點,可將入射電磁波波長轉換成本發明所能偵測的波段,且可應用於3D影像偵測。於實施時,波長調變單元7與相位調變單元8的上下位置也可以對調。Referring to FIG. 9, a fourth embodiment of the electromagnetic wave detection device of the present invention has substantially the same structure as the second embodiment (FIG. 5), except that: the fourth embodiment also includes the
本發明上述各實施例所述的基材1、薄膜陣列單元2、波長調變單元7、相位調變單元8可以採用真空或非真空製程與加工方式。該波長調變單元7、相位調變單元8也可以為不同膜片並採用光學膠(OCA)來與該薄膜陣列單元2膠合。實施時有多種結構、材料與製法,都可形成本發明所需的層疊結構,因此實施時不須限制。The
綜上所述,本發明具有下列優點:(1) 光敏式薄膜電晶體4的結構創新,包括有閘極p型半導體層412與n型通道層43,分別作為第一光吸收層與第二光吸收層,可提升近紅外光和紫外光之光譜響應。(2)使用光敏式薄膜電晶體4陣列自身的驅動與掃描功能來檢測電磁波訊號,以實現大面積全貌式電磁波檢測,而且結構簡單、簡化生產製程。(3)提升薄膜陣列單元2的光電轉換效率,使得即使在薄膜陣列單元2的受光面22額外配置該相位調變單元8(圖7),或者濾波片、波長轉換膜層等波長調變單元7(圖5、圖6),依然能維持檢測功能所要求的敏感度。其中,配置相位調變單元8可實現三維資訊或是高解析度的影像重建,配置波長調變單元7可實現電磁波檢測裝置的波長多工功能。(4)該基材1、薄膜陣列單元2、波長調變單元7與相位調變單元8皆為膜層或薄片,使本發明裝置整體為平板式,此為一種平板式電磁波檢測裝置,具有輕薄優點。本發明可實現高光電轉換效率、低成本、大面積的平板式電磁波檢測裝置,可應用於電磁波波長範圍小於2.5μm(包含紫外光、可見光、近紅外光波段)的影像檢測裝置。當搭配設有該相位調變單元8時,本發明更進一步地可以是指一種三維影像檢測裝置,對於三維影像重建以及提高空間解析度有良好效果。In summary, the present invention has the following advantages: (1) The structural innovation of the photosensitive
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.
1:基材 2:薄膜陣列單元 21:背光面 22:受光面 3:感測像素 301:閘極驅動線 302:資料掃描線 4:光敏式薄膜電晶體 41:閘極電極 411:閘極金屬電極 412:閘極p型半導體層 42:絕緣層 43:通道層 44:汲極金屬電極 45:源極金屬電極 7:波長調變單元 8:相位調變單元1: substrate 2: Thin film array unit 21: Backlight 22: Light-receiving surface 3: Sensing pixels 301: Gate drive line 302: Data scan line 4: Photosensitive thin film transistor 41: gate electrode 411: gate metal electrode 412: gate p-type semiconductor layer 42: insulating layer 43: channel layer 44: Drain metal electrode 45: source metal electrode 7: Wavelength modulation unit 8: Phase modulation unit
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是本發明電磁波檢測裝置的一第一實施例的一側視示意圖; 圖2是該第一實施例的一俯視示意圖,說明該第一實施例的一薄膜陣列單元包括數個呈陣列排列的感測像素; 圖3是任一所述感測像素的等效電路示意圖; 圖4是一示意圖,說明該感測像素的一光敏式薄膜電晶體的層疊結構; 圖5是本發明電磁波檢測裝置的一第二實施例的一側視示意圖; 圖6是該第二實施例的一變化態樣的一側視示意圖; 圖7是本發明電磁波檢測裝置的一第三實施例的一側視示意圖; 圖8是該第三實施例的一變化態樣的一側視示意圖; 圖9是本發明電磁波檢測裝置的一第四實施例的一側視示意圖。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: 1 is a schematic side view of a first embodiment of the electromagnetic wave detection device of the present invention; 2 is a schematic top view of the first embodiment, illustrating that a thin film array unit of the first embodiment includes a plurality of sensing pixels arranged in an array; FIG. 3 is a schematic diagram of an equivalent circuit of any one of the sensing pixels; 4 is a schematic diagram illustrating the laminated structure of a photosensitive thin film transistor of the sensing pixel; 5 is a schematic side view of a second embodiment of the electromagnetic wave detection device of the present invention; 6 is a schematic side view of a modified aspect of the second embodiment; 7 is a schematic side view of a third embodiment of the electromagnetic wave detection device of the present invention; FIG. 8 is a schematic side view of a modified aspect of the third embodiment; FIG. 9 is a schematic side view of a fourth embodiment of the electromagnetic wave detection device of the present invention.
1:基材 1: substrate
3:感測像素 3: Sensing pixels
4:光敏式薄膜電晶體 4: Photosensitive thin film transistor
41:閘極電極 41: gate electrode
411:閘極金屬電極 411: gate metal electrode
412:閘極p型半導體層 412: gate p-type semiconductor layer
42:絕緣層 42: insulating layer
43:通道層 43: channel layer
44:汲極金屬電極 44: Drain metal electrode
45:源極金屬電極 45: source metal electrode
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EP2122673B1 (en) * | 2007-02-22 | 2013-02-13 | Eastman Kodak Company | Ex-situ doped semiconductor transport layer |
US20130037111A1 (en) * | 2011-08-10 | 2013-02-14 | International Business Machines Corporation | Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films |
TW201730195A (en) * | 2016-01-09 | 2017-09-01 | 天光材料科技股份有限公司 | Dithiophenethiadiazole semiconductors and related devices |
TW201926103A (en) * | 2017-11-28 | 2019-07-01 | 大陸商上海耕岩智能科技有限公司 | Electronic device |
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US20130037111A1 (en) * | 2011-08-10 | 2013-02-14 | International Business Machines Corporation | Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films |
TW201730195A (en) * | 2016-01-09 | 2017-09-01 | 天光材料科技股份有限公司 | Dithiophenethiadiazole semiconductors and related devices |
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