TW201730195A - Dithiophenethiadiazole semiconductors and related devices - Google Patents
Dithiophenethiadiazole semiconductors and related devices Download PDFInfo
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- TW201730195A TW201730195A TW106100597A TW106100597A TW201730195A TW 201730195 A TW201730195 A TW 201730195A TW 106100597 A TW106100597 A TW 106100597A TW 106100597 A TW106100597 A TW 106100597A TW 201730195 A TW201730195 A TW 201730195A
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 150000001875 compounds Chemical class 0.000 claims abstract description 108
- 150000004867 thiadiazoles Chemical group 0.000 claims abstract description 24
- 125000000217 alkyl group Chemical group 0.000 claims description 54
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- 239000000126 substance Substances 0.000 claims description 17
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- UGUHFDPGDQDVGX-UHFFFAOYSA-N 1,2,3-thiadiazole Chemical group C1=CSN=N1 UGUHFDPGDQDVGX-UHFFFAOYSA-N 0.000 claims description 4
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Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D513/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for in groups C07D463/00, C07D477/00 or C07D499/00 - C07D507/00
- C07D513/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for in groups C07D463/00, C07D477/00 or C07D499/00 - C07D507/00 in which the condensed system contains three hetero rings
- C07D513/14—Ortho-condensed systems
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Abstract
Description
本發明係關於二噻吩噻二唑半導體及其元件,本案主張2016年1月9日申請之美國臨時專利申請案第62/276,844號的優先權,其揭露的全部內容引用併入本案。 The present invention is directed to a dithiophene thiadiazole semiconductor and its components, and the present application claims priority to U.S. Provisional Patent Application Serial No. 62/276,844, filed on Jan.
可撓性及印刷電子產品應用於製造光電元件的用途是革命性的新概念,與需要特殊且昂貴的設備之矽製造成為鮮明對比地,其係利用高產量、價廉的溶液加工(例如印刷法)於可撓性塑膠片上。藉由使用適當的材料,該等技術可實現價廉的、輕量、可撓性、光學透明及不碎裂的顯示器、手機、印刷電池、太陽能電池及飛機與衛星結構用零件。實現這些技術的材料零件(及其他必要材料)為發生電荷轉移、吸收光及/或產生光所在之半導體。為了擴大元件的功能及應用,需要2種半導體:p型(電洞傳輸)及n型(電子傳輸)。該2種半導體的使用及組合,可實現驅動顯示器、捕捉光線、產生光線、進行邏輯運算及感測器功能之基本電子構成組件。 The use of flexible and printed electronics for the manufacture of optoelectronic components is a revolutionary new concept, in stark contrast to the need for special and expensive equipment, which utilizes high-volume, inexpensive solution processing (eg printing) Method) on flexible plastic sheets. By using appropriate materials, these technologies enable inexpensive, lightweight, flexible, optically transparent and non-fragmented displays, cell phones, printed batteries, solar cells, and parts for aircraft and satellite structures. The material parts (and other necessary materials) that implement these techniques are semiconductors that undergo charge transfer, absorb light, and/or generate light. In order to expand the function and application of components, two types of semiconductors are required: p-type (hole transmission) and n-type (electron transmission). The use and combination of the two types of semiconductors enable basic electronic components that drive the display, capture light, generate light, perform logic operations, and sense sensor functions.
p型及n型通道分子半導體,已實現可接受的元件性能及穩定性。例如,基於並苯(acene)、寡聚噻吩(p型通道)及苝(perylene)(n型通道)之有機薄膜電晶體(OTFT),在周圍環境條件下顯示超過1cm2/Vs之載子遷移率(μ)。然而,分子半導體,由於溶液黏度的要求,通常比聚合物半導體較難藉由印刷法製造。 P-type and n-type channel molecular semiconductors have achieved acceptable component performance and stability. For example, an organic thin film transistor (OTFT) based on acene, oligothiophene (p-type channel), and perylene (n-type channel) exhibits a carrier of more than 1 cm 2 /Vs under ambient conditions. Mobility (μ). However, molecular semiconductors are generally more difficult to manufacture by printing than polymer semiconductors due to the viscosity requirements of the solution.
因此,本技術領域需要新的半導體化合物,特別是在周圍環境條件下具備良好的穩定性、加工特性及/或電荷傳輸特性。 Accordingly, there is a need in the art for new semiconductor compounds, particularly those having good stability, processing characteristics, and/or charge transport characteristics under ambient conditions.
有鑑於上述,本發明提供有機半導體化合物,可解決包含上 述的先前技術之各種不足及缺點。根據本發明之化合物,在周圍環境條件下顯示例如優化的光吸收、良好的電荷傳輸特性、一般溶劑中良好的溶解度及加工多元性(例如藉由溶液加工)等的性質。因此,例如有機光伏電池(OPV)的光電元件,結合1種以上的本發明的化合物作為光活性層,在周圍環境條件下顯示高性能,例如顯示一個或一個以上的低能隙、高填充因子、高開路電壓及高功率轉換效率的性能,較佳地顯示所有的準則。類似地,例如有機薄膜電晶體(OTFT)之其他基於有機半導體的元件,可利用本文所述的有機半導體材料製造。 In view of the above, the present invention provides an organic semiconductor compound which can be solved Various deficiencies and shortcomings of the prior art described. The compounds according to the invention exhibit properties such as optimized light absorption, good charge transport properties, good solubility in general solvents, and processing versatility (e.g., by solution processing) under ambient conditions. Therefore, for example, a photovoltaic element of an organic photovoltaic cell (OPV), in combination with one or more compounds of the present invention as a photoactive layer, exhibits high performance under ambient conditions, for example, exhibiting one or more low energy gaps, high fill factor, The performance of high open circuit voltage and high power conversion efficiency preferably shows all criteria. Similarly, other organic semiconductor-based components, such as organic thin film transistors (OTFTs), can be fabricated using the organic semiconductor materials described herein.
一般,本發明提供一種半導體化合物,包括一個或一個以上的二價二噻吩並[1,2,3]噻二唑基團。如此的二價二噻吩並[1,2,3]噻二唑基團係如以下化學式(I)表示:
本發明提供如此的化合物及基於該化合物的半導體材料之製備方法以及結合本文所揭露之該化合物及半導體材料之各種組成物、複合物及元件。 The present invention provides such compounds and methods of making semiconductor materials based thereon, as well as various compositions, composites and elements of the compounds and semiconductor materials disclosed herein.
根據以下的圖式、說明、範例及請求項,可充分地瞭解前揭及其他本發明的特徵及優點。 The features and advantages of the present invention are apparent from the following description, drawings, and claims.
以下的圖式應被理解為僅供說明的用途。圖式沒有一定按照比例繪製,通常用以強調說明本發明的主旨。圖式並沒有意圖作為本發明的範疇之限制。 The following figures are to be understood as illustrative only. The drawings are not necessarily to scale, the " The drawings are not intended to be limiting of the scope of the invention.
圖1a、1b、1c及1d表示四種不同形態的薄膜電晶體,圖1a表示底閘極-頂接觸,圖1b表示底閘極-底接觸,圖1c表示頂閘極-底接觸,圖1d表示頂閘極-頂接觸,各薄膜電晶體係用來結合一個或一個以上的本發明的化合物,特別是作為通道(半導體)材料。 Figures 1a, 1b, 1c and 1d show four different forms of thin film transistors, Figure 1a shows the bottom gate-top contact, Figure 1b shows the bottom gate-bottom contact, and Figure 1c shows the top gate-bottom contact, Figure 1d Representing a top gate-top contact, each thin film electro-crystalline system is used to incorporate one or more compounds of the invention, particularly as a channel (semiconductor) material.
圖2表示本體異質接面有機光伏元件(亦稱為太陽能電池)的代表構造,結合一個或一個以上的本發明的化合物作為供體及/或受體材料。 2 shows a representative construction of a bulk heterojunction organic photovoltaic element (also referred to as a solar cell) incorporating one or more compounds of the invention as a donor and/or acceptor material.
圖3表示有機發光元件的代表構造,結合一個或一個以上的本發明的化合物作為電子傳輸及/或放射及或電洞傳輸材料。 Figure 3 shows a representative construction of an organic light-emitting element incorporating one or more compounds of the invention as electron transport and/or radiation and or hole transport materials.
在整個申請案,具有、包含或包括特定構成之組成物或具有、包含或包括特定加工步驟之方法,其係預期本發明的組成物實質上含有或 含有所述之構成,本發明的方法實質上含有或含有所述之加工步驟。 Throughout the application, a composition having, comprising or comprising a particular constituent or having, comprising or including a particular processing step is contemplated to comprise a composition of the present invention substantially or Including the described construction, the method of the present invention substantially contains or contains the processing steps described.
在本申請案,所謂一構成要素或構成包含於列舉的構成要素或構成之群組中,應當理解為該構成要素或構成可為群組中的任一構成要素或構成,或者選自2個或2個以上構成要素或構成。再者,本文所述之組成物、裝置或方法之構成要素及/或特徵,在不脫離本發明的精神及範疇下,無論是明確或隱含地可以各種方式任意組合。 In the present application, a constituent element or a component is included in the group of constituent elements or constituents listed, and it should be understood that the constituent element or composition may be any constituent element or constituent in the group, or may be selected from two. Or two or more constituent elements or components. Furthermore, the constituent elements and/or features of the compositions, devices, or methods described herein may be arbitrarily combined in various ways, either explicitly or implicitly, without departing from the spirit and scope of the invention.
「包含」(include、includes、including)、「具有」(have、has、having)等的用語,在沒有具體地說明下,通常應當理解為開放式及無限制性。 Terms such as "include, includes, including", "have" (have, has, having), etc., are generally understood to be open-ended and unrestricted.
在沒有具體地說明下,單數用語包括複數(反之亦然)。此外,在一數值前之「約」的用語,通常包括該特定數值,除非另有特別說明。此處,「約」的用語係指標準值±10%的變化,除非另有說明或隱射。 Unless specifically stated otherwise, the singular terms include the plural (and vice versa). In addition, the term "about" preceding a value generally includes the specified value unless specifically stated otherwise. Here, the term "about" means a variation of ±10% of the standard value unless otherwise stated or implicitly.
步驟的順序或實施某些動作的順序,只要是可維持操作本發明下為無關緊要。再者,2個或其以上的步驟或動作可能同時進行。 The order of the steps or the order in which certain actions are performed is irrelevant as long as the operation can be maintained. Furthermore, two or more steps or actions may be performed simultaneously.
本文所用之「p型半導體材料」或「供體」材料,係指一半導體材料,例如有機半導體材料,具備電洞作為主要電流或電荷載子。於一些實施例,當p型半導體材料被沈積於一基板,其可提供超過約10-5cm2/Vs之電洞遷移率。於場效元件的例,一p型半導體材料可顯示超過約10之電流開/關比。 As used herein, "p-type semiconductor material" or "donor" material refers to a semiconductor material, such as an organic semiconductor material, having a hole as the primary current or charge carrier. In some embodiments, when a p-type semiconductor material is deposited on a substrate, it can provide a hole mobility in excess of about 10 -5 cm 2 /Vs. In the case of field effect devices, a p-type semiconductor material can exhibit a current on/off ratio of more than about 10.
本文所用之「n型半導體材料」或「受體」材料,係指係指一半導體材料,例如有機半導體材料,具備電子作為主要電流或電荷載子。於一些實施例,當n型半導體材料被沈積於一基板,其可提供超過約10-5cm2/Vs之電子遷移率。於場效元件的例,一n型半導體材料可顯示超過約10之電流開/關比。 As used herein, "n-type semiconductor material" or "acceptor" refers to a semiconductor material, such as an organic semiconductor material, having electrons as the primary current or charge carriers. In some embodiments, when an n-type semiconductor material is deposited on a substrate, it can provide an electron mobility of more than about 10 -5 cm 2 /Vs. In the case of field effect devices, an n-type semiconductor material can exhibit a current on/off ratio of more than about 10.
本文所用之「遷移率」,係指電荷載子在電場的影響下穿過該材料的速率之測量,例如電荷載子在p型半導體材料中為電洞(正電荷),在n型半導體材料中為電子(負電荷)。該參數取決於元件的架構,可利用場效元件或空間電荷限制電流量測。 As used herein, "mobility" refers to the measurement of the rate at which a charge carrier passes through a material under the influence of an electric field. For example, a charge carrier is a hole (positive charge) in a p-type semiconductor material, in an n-type semiconductor material. Medium is electron (negative charge). This parameter depends on the architecture of the component and can be measured by field effect components or space charge limiting current measurements.
本文所用之化合物視為「環境安定」或「環境條件下安定」, 係指當結合該化合物作為其半導體材料之電晶體,在該化合物暴露於環境條件下,例如空氣、環境溫度及濕度一段時間後,顯示載子遷移率維持在其初始值。例如一化合物可視為環境安定,若是結合該化合物之電晶體,在暴露於包括空氣、濕度及溫度之環境條件3天、5天或10天後,顯示載子遷移率之變化不超過20%或不超過10%之初始值。 The compounds used herein are considered to be "environmentally stable" or "safe under environmental conditions". Refers to a transistor that combines the compound as its semiconductor material. After exposure of the compound to environmental conditions, such as air, ambient temperature, and humidity for a period of time, the carrier mobility is maintained at its initial value. For example, a compound may be considered to be environmentally stable. If it is a transistor that incorporates the compound, it exhibits a change in carrier mobility of no more than 20% after exposure to environmental conditions including air, humidity, and temperature for 3, 5, or 10 days. No more than 10% of the initial value.
本文所用之填充因子(fill factor;FF),係指實際最大可獲得功率(Pm或Vmp*Jmp)與理論(非實際可獲得)功率之比值((Jsc*Voc)。因此,填充因子可由下式決定:FF=(Vmp*Jmp)/(Jsc*Voc)其中Jmp及Vmp分別表示在最大功率點(Pm)之電流密度及電壓,該點係藉由變化電路中的電阻直到J*V為最大值而得;Jsc及Voc分別表示開路電流及開路電壓。填充因子是評價太陽能電池的關鍵參數。商業用太陽能電池通常具有約0.60%以上的填充因子。 The fill factor (FF) used herein refers to the ratio of the actual maximum available power (P m or V mp *J mp ) to the theoretical (non-actually available) power ((J sc *V oc ). The fill factor can be determined by the following equation: FF = (V mp * J mp ) / (J sc * V oc ) where J mp and V mp represent the current density and voltage at the maximum power point (P m ), respectively. By changing the resistance in the circuit until J*V is the maximum value; J sc and V oc represent the open circuit current and the open circuit voltage respectively. The fill factor is a key parameter for evaluating solar cells. Commercial solar cells usually have about 0.60% or more. Fill factor.
本文所用之開路電壓(Voc),係在無連接外部負載下元件的陽極與陰極之間的電位差。 The open circuit voltage (V oc ) used herein is the potential difference between the anode and cathode of the component without a connected external load.
本文所用之太陽能電池的功率轉換效率(PCE),係指從入射光轉變為電力的功率百分比。太陽能電池的功率轉換效率(PCE)可藉由最大功率點(Pm)除以標準測試條件下(STC)入射光輻射照度(E;W/m2)及太陽能電池的表面積(Ac;m2)而算出。STC通常指在溫度25℃、輻射照度1000W/m2、空氣質量1.5(AM 1.5)光譜。 The power conversion efficiency (PCE) of a solar cell as used herein refers to the percentage of power that is converted from incident light to electricity. The power conversion efficiency (PCE) of a solar cell can be divided by the maximum power point (P m ) divided by the incident light illuminance (E; W/m 2 ) under standard test conditions (STC) and the surface area of the solar cell (A c ; m 2 ) and calculate. STC generally refers to a spectrum at a temperature of 25 ° C, an irradiance of 1000 W/m 2 , and an air mass of 1.5 (AM 1.5).
本文所用之構件(例如薄膜層),若其包含一個或其以上的可吸收光子而產生用以產生光電流的激子之化合物,可被視為「光活性」。 A member (e.g., a film layer) as used herein, if it contains one or more absorbable photons to produce an exciton for generating a photocurrent, can be considered "photoactive".
本文所用之「可能溶液加工」,係指化合物(例如聚合物)、材料或組成物可用於溶液態的加工,例如旋轉塗佈、印刷法(例如噴墨印刷、凹版印刷、平版印刷等)、噴塗法、電噴塗法、滴鑄法、浸塗法及刮刀塗佈法。 As used herein, "probable solution processing" means that a compound (eg, a polymer), material, or composition can be used in a solution state, such as spin coating, printing (eg, inkjet printing, gravure printing, lithography, etc.), Spraying method, electrospraying method, drop casting method, dip coating method and blade coating method.
本文所用之「聚合物化合物」(或「聚合物」)係指一分子包
含複數的一個或其以上的共價鍵結連接之重複單元。一聚合物化合物(聚合物)可由以下一般式表示:
本文所用之「雜原子」係指除了碳或氫以外的元素原子,包括例如氮、氧、矽、硫、磷及硒。 As used herein, "heteroatom" refers to elemental atoms other than carbon or hydrogen, including, for example, nitrogen, oxygen, helium, sulfur, phosphorus, and selenium.
本文所用之「鹵基」或「鹵素」係指氟、氯、溴及碘。 As used herein, "halo" or "halogen" means fluoro, chloro, bromo and iodo.
本文所用之「氧基」(oxo)係指雙鍵的氧(亦即=O)。 As used herein, "oxo" refers to the oxygen of a double bond (ie, =0).
本文所用之「烷基」係指直鏈狀或支鏈狀的飽和烴基。烷基之例,包括甲基(Me)、乙基(Et)、丙基(例如正丙基及異丙基)、丁基(例如正丁基、異丁基、第2丁基、第3丁基)、戊基(例如正戊基、異戊基、 新戊基)、己基等。於某些實施例,烷基可具有1~40個碳原子(亦即C1-40烷基)、例如1~20個碳原子(亦即C1-20烷基)。於一些實施例,烷基可具有1~6個碳原子,可被稱為低級烷基。低級烷基之例,包括甲基、乙基、丙基(例如正丙基及異丙基)及丁基(例如正丁基、異丁基、第2丁基、第3丁基)。於一些實施例,如本文所述烷基可被取代。烷基通常不被其他烷基、烯基或炔基取代。 As used herein, "alkyl" refers to a straight or branched saturated hydrocarbon group. Examples of the alkyl group include methyl (Me), ethyl (Et), propyl (e.g., n-propyl and isopropyl), butyl (e.g., n-butyl, isobutyl, t-butyl, 3) Butyl), pentyl (eg, n-pentyl, isopentyl, neopentyl), hexyl, and the like. In certain embodiments, the alkyl group can have from 1 to 40 carbon atoms (i.e., C 1 -40 alkyl groups), for example, from 1 to 20 carbon atoms (i.e., C 1-20 alkyl groups). In some embodiments, an alkyl group can have from 1 to 6 carbon atoms and can be referred to as a lower alkyl group. Examples of lower alkyl groups include methyl, ethyl, propyl (e.g., n-propyl and isopropyl) and butyl (e.g., n-butyl, isobutyl, t-butyl, and butyl). In some embodiments, an alkyl group as described herein can be substituted. Alkyl groups are generally not substituted by other alkyl, alkenyl or alkynyl groups.
本文所用之「鹵烷基」係指具有一個或其以上的鹵素取代基之烷基。於各實施例,鹵烷基可具有1~40個碳原子(亦即C1-40鹵烷基)、例如1~20個碳原子(亦即C1-20鹵烷基)。鹵烷基之例,包括CF3、C2F5、CHF2、CH2F、CCl3、CHCl2、CH2Cl及C2Cl5等。全鹵烷基,亦即烷基的全部氫原子皆被鹵素取代(例如CF3及C2F5)包含於鹵烷基之定義。例如C1-40鹵烷基可具有式:-CzH2z+1-tX0 t,其中X0每次出現時表示F、Cl、Br或I,z為1~40的整數,t為1~81的整數,t小於或等於2z+1。非全鹵烷基之鹵烷基,可以如本文所述的被取代。 As used herein, "haloalkyl" refers to an alkyl group having one or more halogen substituents. In various embodiments, the haloalkyl group can have from 1 to 40 carbon atoms (i.e., C 1-40 haloalkyl), for example, from 1 to 20 carbon atoms (i.e., C 1-20 haloalkyl). Examples of haloalkyl groups include CF 3 , C 2 F 5 , CHF 2 , CH 2 F, CCl 3 , CHCl 2 , CH 2 Cl, and C 2 Cl 5 . The perhaloalkyl group, that is, the entire hydrogen atom of the alkyl group, is substituted by a halogen (for example, CF 3 and C 2 F 5 ), and is defined by a haloalkyl group. For example, a C 1-40 haloalkyl group can have the formula: -C z H 2z+1-t X 0 t , wherein each occurrence of X 0 represents F, Cl, Br or I, and z is an integer from 1 to 40, t Is an integer from 1 to 81, and t is less than or equal to 2z+1. A haloalkyl group of a non-perhaloalkyl group can be substituted as described herein.
本文所用之「烷氧基」係指-O-烷基。烷氧基之例,包括但不限於甲氧基、乙氧基、丙氧基(例如正丙氧基及異丙氧基)、第3-丁氧基、戊氧基、己氧基等。在-O-烷基之烷基,可以如本文所述的被取代。 As used herein, "alkoxy" refers to -O-alkyl. Examples of alkoxy groups include, but are not limited to, methoxy, ethoxy, propoxy (e.g., n-propoxy and isopropoxy), 3-butoxy, pentyloxy, hexyloxy and the like. The alkyl group at the -O-alkyl group can be substituted as described herein.
本文所用之「烷硫基」係指-S-烷基。包括但不限於甲硫基、乙硫基、丙硫基(例如正丙硫基及異丙硫基)、第3-丁硫基、戊硫基、己硫基等。在-S-烷基之烷基,可以如本文所述的被取代。 As used herein, "alkylthio" refers to -S-alkyl. These include, but are not limited to, methylthio, ethylthio, propylthio (eg, n-propylthio and isopropylthio), 3-butylthio, pentylthio, hexylthio, and the like. The alkyl group at the -S-alkyl group can be substituted as described herein.
本文所用之「烯基」係指具有一個或其以上的碳-碳雙鍵的直鏈狀或支鏈狀烷基。烯基之例,包括乙烯基、丙烯基、丁烯基、戊烯基、己烯基、丁二烯基、戊二烯基、己二烯基等。一個或其以上的碳碳雙鍵可在內部(例如2-丁烯)或末端(例如1-丁烯)。於各實施例,烯基可具有2~40個碳原子(亦即C2-40烯基),例如2~20個碳原子(亦即C2-20烯基)。於一些實施例,烯基可以如本文所述的被取代。烯基通常不被其他烯基、烷基或炔基取代。 As used herein, "alkenyl" refers to a straight or branched alkyl group having one or more carbon-carbon double bonds. Examples of the alkenyl group include a vinyl group, a propenyl group, a butenyl group, a pentenyl group, a hexenyl group, a butadienyl group, a pentadienyl group, a hexadienyl group and the like. One or more carbon-carbon double bonds may be internal (for example 2-butene) or terminal (for example 1-butene). In various embodiments, the alkenyl group can have from 2 to 40 carbon atoms (i.e., C 2-40 alkenyl), for example, from 2 to 20 carbon atoms (i.e., C 2-20 alkenyl). In some embodiments, an alkenyl group can be substituted as described herein. Alkenyl groups are generally not substituted by other alkenyl, alkyl or alkynyl groups.
本文所用之「炔基」係指具有一個或其以上的碳-碳三鍵的直鏈狀或支鏈狀烷基。炔基之例,包括乙炔基、丙炔基、丁炔基、戊炔基、 己炔基等。一個或其以上的碳-碳三鍵可在內部(例如2-丁炔)或末端(例如1-丁炔)。於各實施例,炔基可具有2~40個碳原子(亦即C2-40炔基),例如2~20個碳原子(亦即C2-20炔基)。於一些實施例,炔基可以如本文所述的被取代。炔基通常不被其他炔基、烷基或烯基取代。 As used herein, "alkynyl" refers to a straight or branched alkyl group having one or more carbon-carbon triple bonds. Examples of alkynyl groups include ethynyl, propynyl, butynyl, pentynyl, hexynyl and the like. One or more carbon-carbon triple bonds may be internal (e.g., 2-butyne) or terminal (e.g., 1-butyne). In various embodiments, an alkynyl group can have from 2 to 40 carbon atoms (i.e., a C 2-40 alkynyl group), for example, from 2 to 20 carbon atoms (i.e., a C 2-20 alkynyl group). In some embodiments, an alkynyl group can be substituted as described herein. Alkynyl groups are generally not substituted by other alkynyl groups, alkyl groups or alkenyl groups.
本文所用之「環狀基團」係指包括一個或其以上(例如1-6)的碳環或雜環。於實施例中環狀基團為一「多環基團」,該多環基團可包括2個或其以上的互相稠合的環(亦即共享一個共同鍵)及/或藉由一螺原子互相結合的環。該環狀基團可為環烷基、雜環基、芳香基或雜芳香基(亦即可只包含飽和鍵或不論其芳香性可包含一個或其以上的不飽和鍵)以及可以選擇性地如本文所述的被取代。於環狀基團為「單環狀基團」的實施例,該單環狀基團可包括3-20員的碳環或雜環。環狀基團可包括C6-20芳香基(例如C6-14芳香基)或5-20員的雜芳香基(例如5-14員的雜原子芳香基),每個可以選擇性地如本文所述的被取代。 As used herein, "cyclic group" refers to a carbocyclic or heterocyclic ring comprising one or more (eg, 1-6). In the embodiment, the cyclic group is a "polycyclic group", and the polycyclic group may include two or more mutually fused rings (ie, sharing a common bond) and/or by a snail A ring in which atoms are combined with each other. The cyclic group may be a cycloalkyl group, a heterocyclic group, an aryl group or a heteroaryl group (that is, it may contain only a saturated bond or may contain one or more unsaturated bonds regardless of its aromaticity) and may optionally Substituted as described herein. In the embodiment where the cyclic group is a "monocyclic group", the monocyclic group may include a carbocyclic or heterocyclic ring of 3 to 20 members. The cyclic group may include a C 6-20 aryl group (for example, a C 6-14 aryl group) or a 5-20 membered heteroaryl group (for example, a 5-14 membered hetero atom aryl group), each of which may be selectively The descriptions described herein are replaced.
本文所用之「環烷基」係指非芳香性的碳環基,包括環狀烷基、烯基、炔基。於各種實施例,環烷基可包含3~20個碳原子,例如3~14個碳原子(亦即C3-14環烷基)。環烷基可為單環(例如環己基)或多環(例如含有稠合、橋接或螺旋環系統),其中碳原子位於環系統的內部或外部。任一適合的環烷基的環位置,可共價鍵結於定義的化學結構。環烷基之例,包括環丙基、環丁基、環戊基、環己基、環庚基、環戊烯基、環己烯基、環己二烯基、環庚三烯基、降莰基(norbornyl)、降蒎基(norpinyl)、降蒈基(norcaryl)、金剛烷基及螺環[4.5]癸烷基及其同系物、異構物等。於一些實施例,環烷基可以如本文所述的被取代。 As used herein, "cycloalkyl" refers to a non-aromatic carbocyclic group, including cyclic alkyl, alkenyl, alkynyl groups. In various embodiments, the cycloalkyl group can contain from 3 to 20 carbon atoms, such as from 3 to 14 carbon atoms (ie, C 3-14 cycloalkyl). A cycloalkyl group can be a monocyclic (e.g., cyclohexyl) or polycyclic (e.g., containing a fused, bridged or helical ring system) wherein the carbon atoms are internal or external to the ring system. The ring position of any suitable cycloalkyl group can be covalently bonded to a defined chemical structure. Examples of cycloalkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclopentenyl, cyclohexenyl, cyclohexadienyl, cycloheptatrienyl, halo Norbornyl, norpinyl, norcaryl, adamantyl and spiro[4.5]decylalkyl and their homologues, isomers, and the like. In some embodiments, a cycloalkyl group can be substituted as described herein.
本文所用之「雜環基」係指含有至少一個選自O、S、Se、N、P及Si(例如O、S及N)群組之環雜原子的非芳香性的碳環基,該雜環基可選擇性地含有一個或其以上的雙鍵或三鍵。雜環基可包含3~20個環原子,例如3~14個環原子(亦即3-14員的雜環基)。雜環基中的N、P、S或Se原子(例如N或S)中的一個或其以上,可被氧化(例如嗎啉N-氧化物、硫代嗎啉S-氧化物、硫代嗎啉S,S-二氧化物)。於一些實施例,雜環基的氮或磷原子可具有取代基,例如氫原子、烷基或其他本文所述之取代基。 雜環基亦可含有一個或其以上的氧基,例如氧代哌啶(oxopiperidyl)、氧代噁唑烷基(oxooxazolidyl)、二氧代-(1H,3H)嘧啶基、氧代-2(2H)吡啶基等。雜環基之例,包括嗎啉、硫代嗎啉、吡喃基、咪唑烷基、咪唑啉基、噁唑烷基、吡唑烷基、吡唑啉基、吡咯烷基、吡咯啉基、四氫呋喃基、四氫噻吩基、哌啶基、哌嗪基等。於一些實施例,雜環基可以如本文所述的被取代。 As used herein, "heterocyclyl" refers to a non-aromatic carbocyclic group containing at least one ring heteroatom selected from the group consisting of O, S, Se, N, P, and Si (eg, O, S, and N). The heterocyclic group may optionally contain one or more double or triple bonds. The heterocyclic group may have 3 to 20 ring atoms, for example, 3 to 14 ring atoms (that is, a 3-14 membered heterocyclic group). One or more of the N, P, S or Se atoms (for example, N or S) in the heterocyclic group may be oxidized (for example, morpholine N-oxide, thiomorpholine S-oxide, thio? Porphyrin S, S-dioxide). In some embodiments, the nitrogen or phosphorus atom of the heterocyclyl can have a substituent, such as a hydrogen atom, an alkyl group, or other substituents described herein. The heterocyclic group may also contain one or more oxy groups such as oxopiperidyl, oxooxazolidyl, dioxo-(1H,3H)pyrimidinyl, oxo-2 ( 2H) Pyridyl group and the like. Examples of heterocyclic groups include morpholine, thiomorpholine, pyranyl, imidazolidinyl, imidazolinyl, oxazolidinyl, pyrazolidinyl, pyrazolinyl, pyrrolidinyl, pyrrolinyl, Tetrahydrofuranyl, tetrahydrothiophenyl, piperidinyl, piperazinyl and the like. In some embodiments, a heterocyclic group can be substituted as described herein.
本文所用之「芳香基」係指芳香性的單環烴環系統或一個或其以上的芳香性烴環稠合(亦即共享一個共同鍵)在一起或至少一個芳香性單環烴環與一個或其以上的環烷基環及/或雜環稠合的多環系統。芳香基可包含6~22個碳原子(例如C6-14芳香基),可包含複數稠合環。於一些實施例,多環芳香基可具有8~22個碳原子。任一適合的芳香基的環位置,可共價鍵結於定義的化學結構。只具有芳香性碳環的芳香基之例,包括苯基、1-萘基(雙環)、2-萘基(雙環)、蒽基(三環)、菲基(三環)、並五苯基(五環)等。至少一個芳香性單環烴環與一個或其以上的環烷基環及/或雜環稠合的多環系統之例,包括環戊烷的苯衍生物(亦即茚基,5,6-雙環烷基/芳香環系統)、包括環己烷的苯衍生物(亦即四氫萘基,6,6-雙環烷基/芳香環系統)、包括咪唑啉的苯衍生物(亦即苯並咪唑啉基,5,6-雙環雜環基/芳香環系統)及包括吡喃的苯衍生物(亦即苯並吡喃基,6,6-雙環雜環基/芳香環系統)。芳香基的其他例,包括苯並二噁烷基、苯並二氧呃基(benzodioxolyl)、苯並二氫吡喃基、吲哚啉基等。於一些實施例,芳香基可以如本文所述的被取代。於一些實施例,芳香基可具有一個或其以上的鹵素取代基,可稱為鹵芳香基。全鹵芳香基,亦即芳香基中所有的氫原子皆被鹵原子取代(例如-C6F5),包含於鹵芳香基之定義。於某些實施例,芳香基被另一芳香基取代,可稱為雙芳香基。雙芳香基的各芳香基可以如本文揭露的被取代。 As used herein, "aromatic group" means an aromatic monocyclic hydrocarbon ring system or one or more aromatic hydrocarbon rings fused (ie, sharing a common bond) together or at least one aromatic monocyclic hydrocarbon ring and one Or a polycyclic ring system in which a cycloalkyl ring and/or a heterocyclic ring are fused. The aryl group may contain 6 to 22 carbon atoms (for example, a C 6-14 aryl group) and may include a plurality of fused rings. In some embodiments, the polycyclic aromatic group can have from 8 to 22 carbon atoms. The ring position of any suitable aryl group can be covalently bonded to a defined chemical structure. Examples of aromatic groups having only an aromatic carbocyclic ring include phenyl, 1-naphthyl (bicyclic), 2-naphthyl (bicyclic), fluorenyl (tricyclic), phenanthryl (tricyclic), and pentacyl (five rings) and so on. Examples of polycyclic systems in which at least one aromatic monocyclic hydrocarbon ring is fused to one or more cycloalkyl rings and/or heterocyclic rings, including benzene derivatives of cyclopentane (ie, fluorenyl, 5,6- Bicycloalkyl/aromatic ring system), benzene derivatives including cyclohexane (ie, tetrahydronaphthyl, 6,6-bicycloalkyl/aromatic ring system), benzene derivatives including imidazolines (ie, benzo) Imidazolinyl, 5,6-bicyclic heterocyclyl/aromatic ring system) and benzene derivatives including pyran (i.e., benzopyranyl, 6,6-bicyclic heterocyclyl/aromatic ring system). Other examples of the aryl group include a benzodioxanyl group, a benzodioxolyl group, a chromanyl group, a porphyrin group, and the like. In some embodiments, an aryl group can be substituted as described herein. In some embodiments, an aryl group can have one or more halogen substituents and can be referred to as a halogen aryl group. The perhaloaryl group, that is, all of the hydrogen atoms in the aryl group are replaced by a halogen atom (for example, -C 6 F 5 ), and are included in the definition of a halogen aryl group. In certain embodiments, an aryl group is substituted with another aryl group and may be referred to as a diaryl group. Each aryl group of the diaryl group can be substituted as disclosed herein.
本文所用之「芳香基烷基」係指-烷基-芳香基,其中芳香基烷基,可經由烷基共價鍵結於定義的化學結構。芳香基烷基係在-Y-C6-14芳香基的定義範圍內,Y係如本文所定義。芳香基烷基,例如為苯甲基(-CH2-C6H5)。芳香基烷基,可以選擇性地,亦即芳香基及/或烷基,如本文揭露的被取代。 As used herein, "arylalkyl" refers to an alkyl-aryl group wherein the arylalkyl group is covalently bonded to the defined chemical structure via an alkyl group. The arylalkyl group is within the definition of the -YC 6-14 aryl group, and the Y system is as defined herein. An arylalkyl group is, for example, a benzyl group (-CH 2 -C 6 H 5 ). The arylalkyl group can be optionally substituted, i.e., an aryl group and/or an alkyl group, as disclosed herein.
本文所用之「雜芳香基」係指含有至少一個選自氧(O)、氮(N)、硫(S)、矽(Si)及硒(Se)群組的環雜原子之芳香性單環系統或至少一環為芳香性及含有至少一個環雜原子之多環系統。多環雜芳香基包含2個或其以上的雜芳香環互相稠合以及單環雜芳香環與一個或其以上的芳香性碳環、非芳香性碳環及/或非芳香性雜環稠合。雜芳香基整體可具有例如5~22個環原子,含有1~5個環雜原子(例如5~20員的雜芳香基)。雜芳香基在任一雜原子或碳原子處,可連接至定義的化學結構,成為穩定的結構。通常雜芳香基環,不含有O-O、S-S或S-O鍵結。然而,雜芳香基中的一個或其以上的N或S原子可被氧化(例如吡啶N-氧化物、噻吩S-氧化物、噻吩S,S-二氧化物)。雜芳香基之例,包括例如5或6員單環及5-6雙環系統,如以下所示:
本文揭露的化合物可包含一「二價基」,此處定義為一連結基,可與2個其他基團形成共價鍵。例如本發明的化合物可包含二價C1-2o烷基(例如亞甲基)、二價C2-20烯基(例如伸乙烯基)、二價C2-20炔基(例如伸乙炔基)、二價C6-14芳香基(例如伸苯基)、二價3-14員雜環基(例如伸吡咯烷基)及/或二價5-14員雜芳香基(例如伸噻吩基)。 The compounds disclosed herein may comprise a "divalent group", defined herein as a linking group, which forms a covalent bond with two other groups. For example, the compound of the present invention may comprise a divalent C 1-2o alkyl group (e.g., a methylene group), a divalent C 2-20 alkenyl group (e.g., a vinyl group), and a divalent C 2-20 alkynyl group (e.g., an exetylene group). a divalent C 6-14 aryl group (for example, a phenylene group), a divalent 3-14 membered heterocyclic group (for example, a pyrrolidinyl group), and/or a divalent 5-14 membered heteroaryl group (for example, a thienyl group) ).
數百種常見取代基之供給電子及吸引電子的性質,反映所有常見的取代基類型,已被確認、量化及發表。供給電子及吸引電子的性質的最常見量化是漢密特值(Hammett σ值)。氫原子的漢密特σ值為零,其他取代基具有漢密特σ值,依據其供給電子或吸引電子特性而正的增加或負的增加。具有負的漢密特σ值之取代基被視為供給電子,而具有正的漢密特σ值之取代基被視為吸引電子。參考Lange化學手冊(Lange’s Handbook of Chemistry,12th ed.,McGraw Hill,1979,Table 3-12,pp.3-134 to 3-138),其中列舉大量的常見取代基之漢密特σ值,參考引用併入本文。 The nature of the supply and electron attraction of hundreds of common substituents reflects all common types of substituents that have been identified, quantified and published. The most common quantification of the properties of supplying electrons and attracting electrons is the Hammett value (Hammett σ value). The Hammett σ value of a hydrogen atom is zero, and other substituents have a Hammett σ value, which is a positive or negative increase depending on the electron supply or attraction characteristics. Substituents with a negative Hammett σ value are considered to be electrons, while substituents with a positive Hammett σ value are considered to attract electrons. Refer to the Lange's Handbook of Chemistry, 12th ed., McGraw Hill, 1979, Table 3-12, pp. 3-134 to 3-138, which lists a large number of common Hamilton's σ values, reference The references are incorporated herein.
「電子接受基」的用語,應可理解可用來作為電子受體及吸電子基的同義詞。特別是「吸電子基(electron-withdrawing group;EWG)」、「電子接受基」或「電子受體」係指一官能基比位於分子中相同位置的氫原子,將電子更吸引到自身。吸電子基(EWG)之例,包括但不限於鹵素(例如F、Cl、Br、I)、-NO2、-CN、-NC、-S(R0)2 +、-N(R0)3 +、-SO3H、-SO2R0、-SO3R0、-SO2NHR0、-SO2N(R0)2、-COOH、-COR0、-COOR0、-CONHR0、-CON(R0)2、C1-40鹵烷基、C6-14芳香基、5~14員缺電子雜芳香基,其中R0為C1-20烷基、C2-20烯基、C2-20炔基、C1-20鹵烷基、C1-20烷氧基、C6-14芳香基、C3-14環烷 基、3~14員環的雜環基、5~14員環的雜芳香基,各基可選擇性地如本文所述的被取代。例如,各C1-20烷基、C2-20烯基、C2-20炔基、C1-20鹵烷基、C1-20烷氧基、C6-14芳香基、C3-14環烷基、3~14員環的雜環基、5~14員環的雜芳香基,可選擇性地以1-5小吸電子基取代,例如F、Cl、Br、-CN、-NC、-S(R0)2 +、-N(R0)3 +、-SO3H、-SO2R0、-SO3R0、-SO2NHR0、-SO2N(R0)2、-COOH、-COR0、-COOR0、-CONHR0、-CON(R0)2。 The term "electron accepting base" should be understood to be synonymous with electron acceptors and electron withdrawing groups. In particular, "electron-withdrawing group (EWG)", "electron accepting group" or "electron acceptor" refers to a hydrogen atom that is functionally located at the same position in the molecule, and attracts electrons more to itself. Examples of electron-withdrawing groups (EWG) include, but are not limited to, halogens (eg, F, Cl, Br, I), -NO 2 , -CN, -NC, -S(R 0 ) 2 + , -N(R 0 ) 3 + , -SO 3 H, -SO 2 R 0 , -SO 3 R 0 , -SO 2 NHR 0 , -SO 2 N(R 0 ) 2 , -COOH, -COR 0 , -COOR 0 , -CONHR 0 , -CON(R 0 ) 2 , C 1-40 haloalkyl, C 6-14 aryl, 5- to 14-membered electron-deficient heteroaryl, wherein R 0 is C 1-20 alkyl, C 2-20 olefin a C 2-20 alkynyl group, a C 1-20 haloalkyl group, a C 1-20 alkoxy group, a C 6-14 aryl group, a C 3-14 cycloalkyl group, a 3 to 14 membered ring heterocyclic group, Heteroaryl groups of 5 to 14 membered rings, each of which may be optionally substituted as described herein. For example, each C 1-20 alkyl group, C 2-20 alkenyl group, C 2-20 alkynyl group, C 1-20 haloalkyl group, C 1-20 alkoxy group, C 6-14 aryl group, C 3- a 14- cycloalkyl group, a 3 to 14 membered ring heterocyclic group, and a 5 to 14 membered ring heteroaryl group may be optionally substituted with a 1-5 small electron withdrawing group such as F, Cl, Br, -CN, - NC, -S(R 0 ) 2 + , -N(R 0 ) 3 + , -SO 3 H, -SO 2 R 0 , -SO 3 R 0 , -SO 2 NHR 0 , -SO 2 N(R 0 2 , -COOH, -COR 0 , -COOR 0 , -CONHR 0 , -CON(R 0 ) 2 .
「供電子基」的用語,應可理解可用來作為電子供體的同義詞。特別是「供電子基」或「電子供體」係指一官能基比位於分子中相同位置的氫原子,將電子供給相鄰的原子。供電子基之例,包括-OH、-OR0、-NH2、-NHR0、-N(R0)2及5~14員環的富電子雜芳香基,其中R0為C1-20烷基、C2-20烯基、C2-20炔基、C6-14芳香基或C3-14環烷基。 The term "electronic-based" should be understood to be synonymous with electronic donors. In particular, "electron-donating" or "electron donor" refers to a hydrogen atom having a functional group at the same position in the molecule, and supplying electrons to adjacent atoms. Examples of electron-donating groups include -OH, -OR 0 , -NH 2 , -NHR 0 , -N(R 0 ) 2 and an electron-rich heteroaryl group of 5 to 14 member rings, wherein R 0 is C 1-20 Alkyl, C 2-20 alkenyl, C 2-20 alkynyl, C 6-14 aryl or C 3-14 cycloalkyl.
各種無取代的雜芳香基可被視為富電子(π-過量)或缺電子(π-缺乏)。如此的分類係根據在各環原子與苯環上的碳原子比較之平均電子密度。富電子系統包括具有一個雜原子的5員雜芳香基,例如呋喃、吡咯、噻吩及其苯並對應物,例如苯並呋喃、苯並吡咯及苯並噻吩。缺電子系統包括具有一個或其以上的雜原子之6員雜芳香基,例如吡啶、吡嗪、噠嗪及嘧啶,以及其苯並對應物,例如喹啉、異喹啉、喹喔啉、噌啉、酞嗪、萘啶、喹唑啉、菲啶、吖啶及嘌呤。混合雜芳香環,依據環中的一個或其以上的雜原子之種類、數目及位置,可屬於任一類。參考雜環化學(Katritzky,A.R and Lagowski,J.M.,Heterocyclic Chemistry,John Wiley & Sons,New York,1960)。 Various unsubstituted heteroaryl groups can be considered as electron rich (π-excess) or electron deficient (π-deficient). Such classification is based on the average electron density of each ring atom compared to the carbon atom on the benzene ring. The electron rich system comprises a 5-membered heteroaryl group having one hetero atom, such as furan, pyrrole, thiophene and its benzo counterparts, such as benzofuran, benzopyrrole and benzothiophene. Electron-deficient systems include 6-membered heteroaryl groups having one or more heteroatoms, such as pyridine, pyrazine, pyridazine, and pyrimidine, and benzo counterparts thereof, such as quinoline, isoquinoline, quinoxaline, anthracene Porphyrin, pyridazine, naphthyridine, quinazoline, phenanthridine, acridine and hydrazine. The mixed heteroaromatic ring may belong to any class depending on the kind, number and position of one or more heteroatoms in the ring. Reference to heterocyclic chemistry (Katritzky, AR and Lagowski, JM, Heterocyclic Chemistry , John Wiley & Sons, New York, 1960).
在本說明書中,單體A及B的取代基係以群組或範圍的方式揭露。具體地,該描述包括該等的群組或範圍的成員之每個及每個單獨子組合。例如,「C1-6烷基」的用語,具體地單獨揭露C1、C2、C3、C4、C5、C6、C1-C6、C1-C5、C1-C4、C1-C3、C1-C2、C2-C6、C2-C5、C2-C4、C2-C3、C3-C6、C3-C5、C3-C4、C4-C6、C4-C5及C5-C6烷基。作為其他實例,範圍0~40的整數,具體地單獨揭露0、1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、29、30、31、32、33、34、35、36、37、38、39及40,以及範圍1~20的 整數,具體地單獨揭露1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19及20。另外的實例包括「選擇性地被1-5個取代基取代」之用語,具體地意在單獨揭露一可包括0、1、2、3、4、5、0-5、0-4、0-3、0-2、0-1、1-5、1-4、1-3、1-2、2-5、2-4、2-3、3-5、3-4及4-5個取代基之化學基。 In the present specification, the substituents of the monomers A and B are disclosed in groups or ranges. In particular, the description includes each and every individual sub-combination of the members of the group or range. For example, the term "C 1-6 alkyl" specifically discloses C 1 , C 2 , C 3 , C 4 , C 5 , C 6 , C 1 - C 6 , C 1 - C 5 , C 1 - C4, C 1 -C 3 , C 1 -C 2 , C 2 -C 6 , C 2 -C 5 , C 2 -C 4 , C 2 -C 3 , C 3 -C 6 , C 3 -C 5 , C 3 -C 4 , C 4 -C 6 , C 4 -C 5 and C 5 -C 6 alkyl. As other examples, integers ranging from 0 to 40, specifically, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17 are separately disclosed. , 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39 and 40, and range 1 An integer of ~20, specifically 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, and 20 are separately disclosed. Further examples include the phrase "optionally substituted with 1-5 substituents", specifically intended to be disclosed separately, including 0, 1, 2, 3, 4, 5, 0-5, 0-4, 0. -3, 0-2, 0-1, 1-5, 1-4, 1-3, 1-2, 2-5, 2-4, 2-3, 3-5, 3-4, and 4-5 The chemical group of a substituent.
本文所述之化合物可包含一不對稱原子(也稱為掌性中心),一些化合物可包含2個或其以上的不對稱原子或中心,其可產生旋光異構物(對映體)及非對映體(幾何異構物)。本發明包括如此的旋光異構物及非對映體,包括各解析的對映地或非對映地純異構物(例如(+)或(-)立體異構物)及該等的消旋混合物,以及其他的對映體及非對映體的混合物。於一些實施例,旋光異構物可藉由本技術領域習知的標準的製程以富含對映體或純的對映體的形態得到,該製程包括例如掌性分離、非對映體鹽形成、動力學離析及不對稱合成。本發明也包括含有烯基基團(例如烯、偶氮及亞胺)的順式及反式異構物。應理解的是本發明的化合物包括所有可能的純的或混合的區域異構物(regioisomer)。可能分離如此的異構物,例如使用本技術領域習知的標準的分離製程,例如管柱層析法、薄層層析法、模擬移動床層析法、高效液相層析法。然而,區域異構物的混合物,可使用於類似每種單獨的區域異構物的用途。 The compounds described herein may comprise an asymmetric atom (also referred to as a palm center), and some compounds may contain two or more asymmetric atoms or centers which may produce optical isomers (enantiomers) and Enantiomer (geometric isomer). The present invention includes such optical isomers and diastereomers, including each of the resolved enantiomerically or diastereomericly pure isomers (e.g., (+) or (-) stereoisomers) and such Spin the mixture, as well as other enantiomers and mixtures of diastereomers. In some embodiments, optical isomers can be obtained in a form enriched in enantiomers or pure enantiomers by standard procedures well known in the art, including, for example, palm separation, diastereomeric salt formation. , kinetic segregation and asymmetric synthesis. The invention also includes cis and trans isomers containing alkenyl groups such as alkenes, azo and imines. It will be understood that the compounds of the invention include all possible pure or mixed regioisomers. It is possible to isolate such isomers, for example using standard separation procedures well known in the art, such as column chromatography, thin layer chromatography, simulated moving bed chromatography, high performance liquid chromatography. However, mixtures of regioisomers can be used for purposes similar to each of the individual regioisomers.
除非另有明確說明,具體地考慮一區域異構物的描述包括任何其他區域異構物及任何區域異構物的混合物。 The description of a regioisomer specifically includes any other regioisomer and any mixture of regioisomers unless specifically stated otherwise.
此處所述之「離去基(leaving group)」係指一帶電或不帶電原子(或原子團),例如由於取代或脫去反應,可被取代成為一穩定物種。離去基之例,包括但不限於鹵素(例如Cl、Br、I)、疊氮(N3)、硫氰酸鹽(SCN)、硝基(NO2)、氰酸酯(CN)、水(H2O)、氨(NH3)及磺酸基(例如OSO2-R,其中R可為C1-10烷基或C6-14芳香基,每個可選擇性地被選自C1-10烷基及吸電子基群組之1-4個基取代),磺酸基例如甲苯磺酸鹽(OTs)、甲烷磺酸鹽(OMs)、對溴苯磺酸鹽(OBs)、4-硝基苯磺酸鹽(ONs)及三氟甲烷磺酸鹽(OTf)。 As used herein, "leaving group" means a charged or uncharged atom (or group of atoms) which, for example, may be substituted into a stable species due to a substitution or removal reaction. Examples of leaving groups include, but are not limited to, halogen (eg, Cl, Br, I), azide (N 3 ), thiocyanate (SCN), nitro (NO 2 ), cyanate (CN), water (H 2 O), ammonia (NH 3 ), and sulfonic acid groups (eg, OSO 2 -R, wherein R can be a C 1-10 alkyl group or a C 6-14 aryl group, each optionally being selected from C a 1-4 alkyl group of a 1-10 alkyl group and an electron withdrawing group), a sulfonic acid group such as toluenesulfonate (OTs), methanesulfonate (OMs), p-bromobenzenesulfonate (OBs), 4-Nitrobenzenesulfonate (ONs) and trifluoromethanesulfonate (OTf).
在整個說明書中,結構可用或可以不用化學名稱表示。若是 出現任何命名的問題,則以結構為準。 Throughout the specification, the structure may or may not be represented by a chemical name. if In case of any naming problem, the structure shall prevail.
本發明係關於可用於有機半導體材料之分子或聚合物化合物。本發明的化合物可在各種通常的有機溶劑中具有良好的溶解性以及在空氣中具有良好的穩定性。當結合到包括但不限於有機光伏或太陽能電池、有機發光二極體及有機場效電晶體之光學、電子或光電元件時,本發明的化合物可賦予各種期望的性能。 This invention relates to molecules or polymer compounds useful in organic semiconductor materials. The compounds of the present invention have good solubility in various usual organic solvents and good stability in air. The compounds of the present invention can impart a variety of desirable properties when incorporated into optical, electronic or optoelectronic components including, but not limited to, organic photovoltaic or solar cells, organic light emitting diodes, and organic field cells.
更具體地,本發明提供半導體化合物,包括一個或一個以上的式(I)所示的基團:
於較佳的實施例,一個或一個以上的式(I)所示的基團。可選擇性地被式(II):
於一些實施例,本發明的化合物為一聚合物,具有一個或一個以上的重複單元M1,其中每個構成單元M1具有至少一個式(I)所示的基團,該聚合物之聚合度(n)至少為3。 In some embodiments, the compound of the invention is a polymer having one or more repeating units M 1 wherein each constituent unit M 1 has at least one group of formula (I), the polymerization of the polymer Degree (n) is at least 3.
除式(I)所示的基團,重複單元M1可包括一個或一個以上的間隔子(Sp),可為非環狀(Z)或環狀,特別是單環(Ar)或多環(pi-2),與式(I)所示的基團一起可提供一pi-延伸共軛基團。例如M1可為選自以下群組:
說明共軛多環基團pi-2,可為選擇性被取代的C8-26芳香基或8-26員雜芳香基。例如,pi-2可具有一平面及pi-延伸共軛環中心,可被如本文所揭露的選擇性地取代。適合的環中心之例,包括萘、蒽、四苯、並五苯、苝、芘、暈苯(coronene)、茀(fluorene)、苯並二茚(indacene)、茚並茀(indenofluorene)及四伸苯(tetraphenylene)及該等的一個或一個以上的碳原子變更為例如O、S、Si、Se、N或P之雜原子之類似物。 The conjugated polycyclic group pi-2 may be illustrated as a selectively substituted C 8-26 aryl group or an 8-26 membered heteroaryl group. For example, pi-2 can have a planar and pi-extended conjugated ring center that can be selectively substituted as disclosed herein. Examples of suitable ring centers include naphthalene, anthracene, tetraphenylene, pentacene, anthracene, anthracene, coronene, fluorene, indacene, indenofluorene, and four. The tetraphenylene and one or more of the carbon atoms are changed to analogs of heteroatoms such as O, S, Si, Se, N or P.
於某些實施例,pi-2可為選自以下群組:
其中Ra為選自以下群組:H、F、Cl、-CN、R、-OR、-SR、-C(O)R、-OC(O)R及-C(O)OR;Rb為選自以下群組:H、R及-L-Rf;Rc為H或R;Rd為選自以下群組:H、F、Cl、-CN、R、-OR、-SR、-C(O)R、-OC(O)R、-C(O)OR及-L-Rf;Re為選自以下群組:H、F、Cl、-CN、 R、-OR、-SR、-C(O)R、-OC(O)R、-C(O)OR及Rf;Rf為C6-20芳香基或5-20-員雜芳香基,每個選擇性地被選自F、Cl、-CN、R、-OR及-SR群組之1-8個基取代;L為選自以下群組:-O-、-S-、-C(O)-、-OC(O)-、-C(O)O-及共價鍵;以及R為選自以下群組:C1-40烷基、C1-40鹵烷基、C2-40烯基及C2-40炔基。 Wherein R a is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, -C(O)R, -OC(O)R, and -C(O)OR; R b Is selected from the group consisting of H, R and -LR f ; R c is H or R; R d is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, -C (O) R, -OC(O)R, -C(O)OR, and -LR f ; R e is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, - C(O)R, -OC(O)R, -C(O)OR and Rf ; Rf is a C6-20 aryl group or a 5-20-membered heteroaryl group, each being selectively selected from 1-8 base substitutions of the F, Cl, -CN, R, -OR, and -SR groups; L is selected from the group consisting of -O-, -S-, -C(O)-, -OC ( O)-, -C(O)O- and a covalent bond; and R is selected from the group consisting of C 1-40 alkyl, C 1-40 haloalkyl, C 2-40 alkenyl, and C 2- 40 alkynyl.
單環共軛基團Ar,在每次出現獨立為選擇性被取代的5-或6-員(雜)芳香基。例如,Ar可為選自以下群組:苯基、噻吩基、噻唑基、異噻唑基、噻二唑基、呋喃基、噁唑基、異噁唑基、噁二唑基、吡咯基、三唑基、四唑基、吡唑基、咪唑基、吡啶基、嘧啶基、噠嗪基及吡嗪基,每個可選擇性地被選自鹵素、CN、C1-40烷基、C1-40鹵烷基、C1-40烷氧基及C1-40烷硫基群組之1-4個R5基取代。 The monocyclic conjugated group Ar, at each occurrence, is independently substituted 5- to 6-membered (hetero) aryl. For example, Ar may be selected from the group consisting of phenyl, thienyl, thiazolyl, isothiazolyl, thiadiazolyl, furyl, oxazolyl, isoxazolyl, oxadiazolyl, pyrrolyl, tri An azolyl, tetrazolyl, pyrazolyl, imidazolyl, pyridyl, pyrimidinyl, pyridazinyl and pyrazinyl group, each optionally being selected from the group consisting of halogen, CN, C 1-40 alkyl, C 1 1-4 R 5 groups of -40 haloalkyl, C 1-40 alkoxy and C 1-40 alkylthio groups are substituted.
以舉例方式,(Ar)m及/或(Ar)m’中各Ar存在時(亦即當m及m’為1、2、3、4、5或6)表示:
共軛非環狀連接子Z,可包括一個或一個以上的雙鍵或三鍵。例如Z可為二價乙烯基(亦即具有一個雙鍵)、二價乙炔基(亦即具有一個三鍵)、包括2個或其以上的共軛雙鍵或三鍵或其他直鏈或支鏈狀之可包括如Si、N、P等的雜原子之共軛系統之C4-40烯基或炔基。於特定實施例,Z
為選自以下群組:
於較佳實施例,本發明的聚合物包括選自以下群組的重複單元M1:
更理想地,M1為選自以下群組:
於某些實施例,本發明的聚合物為一同元聚合物,只包含相同的重複單元M1。於其他實施例,該聚合物為一共聚物,包含2種或2種
以上不同的重複單元M1。又於其他實施例,本發明的聚合物為包含至少一個重複單元M1以及至少一個其他重複單元M2之共聚物,其中重複單元M2不包含任何式(I)的基團。如此的重複單元M2包含一個或一個以上的非環狀(Z)、單環(Ar)及/或多環(pi-2)共軛連接子,一起提供pi-延伸共軛基團。例如M2為選自以下群組:
為了說明,於某些實施例,M2可具有以下化學式:
於其他實施例,M2可具有以下化學式:
其中Ra為選自以下群組:H、F、Cl、-CN、R、-OR、-SR、-C(O)R、-OC(O)R及-C(O)OR;Rb為選自以下群組:H、R及-L-Rf;Rc為H或R;Rd為選自以下群組:H、F、Cl、-CN、R、-OR、-SR、-C(O)R、-OC(O)R、-C(O)OR及-L-Rf;Re為選自以下群組:H、F、Cl、-CN、 R、-OR、-SR、-C(O)R、-OC(O)R、-C(O)OR及Rf;Rf為C6-20芳香基或5-20-員雜芳香基,每個選擇性地被選自F、Cl、-CN、R、-OR及-SR群組之1-8個基取代;L為選自以下群組:-O-、-S-、-C(O)-、-OC(O)-、-C(O)O-及共價鍵;以及R為選自以下群組:C1-40烷基、C1-40鹵烷基、C2-40烯基及C2-40炔基。 Wherein R a is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, -C(O)R, -OC(O)R, and -C(O)OR; R b Is selected from the group consisting of H, R and -LR f ; R c is H or R; R d is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, -C (O) R, -OC(O)R, -C(O)OR, and -LR f ; R e is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, - C(O)R, -OC(O)R, -C(O)OR and Rf ; Rf is a C6-20 aryl group or a 5-20-membered heteroaryl group, each being selectively selected from 1-8 base substitutions of the F, Cl, -CN, R, -OR, and -SR groups; L is selected from the group consisting of -O-, -S-, -C(O)-, -OC ( O)-, -C(O)O- and a covalent bond; and R is selected from the group consisting of C 1-40 alkyl, C 1-40 haloalkyl, C 2-40 alkenyl, and C 2- 40 alkynyl.
又於其他實施例,M2可具有以下化學式:
其中Ra為選自以下群組:H、F、Cl、-CN、R、-OR、-SR、-C(O)R、-OC(O)R及-C(O)OR;Rb為選自以下群組:H、R及-L-Rf;Rc為H或R;Rd為選自以下群組:H、F、Cl、-CN、R、-OR、-SR、-C(O)R、-OC(O)R、-C(O)OR及-L-Rf;Re為選自以下群組:H、F、Cl、-CN、R、-OR、-SR、-C(O)R、-OC(O)R、-C(O)OR及Rf;Rf為C6-20芳香基或5-20-員雜芳香基,每個選擇性地被選自F、Cl、-CN、R、-OR及-SR群組之1-8個基取代;L為選自以下群組:-O-、-S-、-C(O)-、-OC(O)-、-C(O)O-及共價鍵;以及R為選自以下群組:C1-40烷基、C1-40鹵烷基、C2-40烯基及C2-40炔基。 Wherein R a is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, -C(O)R, -OC(O)R, and -C(O)OR; R b Is selected from the group consisting of H, R and -LR f ; R c is H or R; R d is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, -C (O) R, -OC(O)R, -C(O)OR, and -LR f ; R e is selected from the group consisting of H, F, Cl, -CN, R, -OR, -SR, - C(O)R, -OC(O)R, -C(O)OR and Rf ; Rf is a C6-20 aryl group or a 5-20-membered heteroaryl group, each being selectively selected from 1-8 base substitutions of the F, Cl, -CN, R, -OR, and -SR groups; L is selected from the group consisting of -O-, -S-, -C(O)-, -OC ( O)-, -C(O)O- and a covalent bond; and R is selected from the group consisting of C 1-40 alkyl, C 1-40 haloalkyl, C 2-40 alkenyl, and C 2- 40 alkynyl.
於其他實施例,M2可具有以下群組所示之化學式:
於較佳實施例,本發明的聚合物為M1與至少一個M2之共聚物,其中M2為選自以下:
本發明的聚合物的某些實施例,可由選自以下群組之化學式表示:
對於上述各種聚合物,聚合度(n)可為3~1,000的整數。於一些實施例。n可為4~1,000、5~1,000、6~1,000、7~1,000、8~1,000、9~1,000、10~1,000。例如n可為8~500、8~400、8~300或8~200。包括2個或其以上的不同重複單元之本發明的化合物的實施例,以無規或交替的重複方式具有該等重複單元,以及2個重複單元的莫耳比可為約0.05~0.95的範圍。例如2個重複單元的對應的莫耳比(x及y)可為約0.1~0.9的範圍,約0.2~0.8的範圍,約0.3~0.7的範圍,約0.4~0.6的範圍,約0.45~0.55的範圍。於某些實施例,該聚合物可具有相同的第1重複單元與第2重複單元(亦即x=y=0.5)。 For each of the above polymers, the degree of polymerization (n) may be an integer of from 3 to 1,000. In some embodiments. n can be 4 to 1,000, 5 to 1,000, 6 to 1,000, 7 to 1,000, 8 to 1,000, 9 to 1,000, and 10 to 1,000. For example, n can be 8~500, 8~400, 8~300 or 8~200. Examples of compounds of the invention comprising two or more different repeating units, having such repeating units in a random or alternating repeating manner, and having a molar ratio of two repeating units of from about 0.05 to 0.95 . For example, the corresponding molar ratios (x and y) of the two repeating units may be in the range of about 0.1 to 0.9, in the range of about 0.2 to 0.8, in the range of about 0.3 to 0.7, in the range of about 0.4 to 0.6, and about 0.45 to 0.55. The scope. In certain embodiments, the polymer can have the same first repeat unit and second repeat unit (ie, x = y = 0.5).
於一些實施例,該化合物為一分子化合物,包括至少一個式(I)的基團及複數個直鏈及/或環狀共軛基團,藉此該化合物全體提供一pi-延伸共軛系統。 In some embodiments, the compound is a molecular compound comprising at least one group of formula (I) and a plurality of linear and/or cyclic conjugated groups whereby the compound provides a pi-extension conjugate system .
為了說明,例示的小分子半導體化合物包括至少一個式(I)的基團,較理想地一個或一個以上的式(I)的基團為式(II)所表示,用於製備本文所述的聚合物之單體,可由以下化學式表示:
根據本發明的分子半導體化合物之某些實施例,可由以下群組之化學式表示:
根據本發明所例示的分子半導體化合物之特定實施例包括:
根據本發明所例示的包括式(I)的基團之半導體化合物及單體,可使用以下所述的合成途徑製備。根據本發明的其他單體,可為商業上可購得、或文獻上已知,或可應用標準合成方式或本技藝者習知的製程,由容易製造的中間體而製備。製備有機分子、官能基轉換及操作用之標準合成方法及製程,可容易地從本領域的相關科學文獻或標準教科書取得。 The semiconductor compounds and monomers comprising the groups of formula (I) exemplified in accordance with the invention can be prepared using the synthetic routes described below. Other monomers in accordance with the present invention may be commercially available, or known in the literature, or may be prepared from readily available intermediates using standard synthetic procedures or procedures well known to those skilled in the art. Standard synthetic methods and processes for the preparation of organic molecules, functional group conversion and manipulation are readily available from relevant scientific literature or standard textbooks in the field.
為了說明,無取代的二噻吩並[1,2,3]噻二唑基團,根據(但不限於)文獻(參考例如Trusova,M.E.et al.,Synthesis,13:2154-2158(2011);Ward,E.R.et al.,J.Chem.Soc.,2374-2379(1962);and Hünig,S.et al.,Justus Liebigs Annalen der Chemie,738:192-194(1970))記載的類苯[1,2,3]噻二唑(benzenoid[1,2,3]thiadiazole)之合成途徑,可藉由重氮化(重氮化合物之形成)後環閉合,例如:
其他方式歸納如下:
烷基取代之二噻吩並[1,2,3]噻二唑,可根據以下方式合成:
由於反應中間體為重氮鹽,任意可從芳香基胺形成芳香基重氮鹽的試劑,可使用於二噻吩並[1,2,3]噻二唑環及其衍生物的製備。重氮化的方式之例,可在文獻(Butler,R.N.,Chemical Reviews,75(2):241-257(1975)以及O’Leary,P.,Sci.Synth.,31b,1361-1400(2007))中找到。 Since the reaction intermediate is a diazonium salt, any reagent which can form an aromatic diazonium salt from an aromatic amine can be used for the preparation of a dithieno[1,2,3]thiadiazole ring and its derivatives. An example of the manner of diazotization can be found in the literature (Butler, RN, Chemical Reviews , 75(2): 241-257 (1975) and O'Leary, P., Sci. Synth. , 31b, 1361-1400 (2007). )) found in).
以下文獻中習知的化合物或可由以下方式合成:及為商業上可購得;可使用Gol’dfarb所述之製程(Gol’dfarb et al.,Izvestiya Akademii Nauk SSSR,Seriya Khimicheskaya,10:2290-5(1973))合成;可使用Kellogg所述之製程(Kellogg et al.,Journal of Organic Chemistry,33(7):2902-9(1968))合成;之反應可使用如Barbarella所述之方法(Barbarella et al.,Tetrahedron,53(27):9401-9406(1997))進行;之反應可使用如所述之類似方法(Sabbatini et al.,Journal of Medicinal Chemistry,53(17):6506-6510(2010))進行;之反應可使用如所述之類似方法(Qiu et al.,Angewandte Chemie,International Edition,52(44):11581-11584或Al-Allaf et al.,Journal of Organometallic Chemistry,373(1):29-35(1989))進行; 可使用Mahatsekake所述之製程(Mahatsekake et al.,Sulfur Letters,7(6):231-8(1988))合成;之反應可使用Ishii所述之製程(Ishii et al.,Heteroatom Chemistry,25(6):658-673(2014))進行;可使用美國專利申請案中所述之製程(美國專利申請第14/951,628號)合成。 Compounds known in the following literature may be synthesized in the following manner: and Commercially available; It can be synthesized using the process described by Gol'dfarb (Gol'dfarb et al. , Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya , 10: 2290-5 (1973)); It can be synthesized using the process described by Kellogg (Kellogg et al. , Journal of Organic Chemistry , 33(7): 2902-9 (1968)); The reaction can be carried out using the method described by Barbarella (Barbarella et al. , Tetrahedron , 53 (27): 9401-9406 (1997)); The reaction can be carried out using a similar method as described (Sabbatini et al. , Journal of Medicinal Chemistry , 53(17): 6506-6510 (2010)); The reaction can be carried out using a similar method as described (Qiu et al. , Angewandte Chemie, International Edition , 52(44): 11581-11584 or Al-Allaf et al. , Journal of Organometallic Chemistry , 373(1): 29- 35 (1989)); It can be synthesized using the process described by Mahatesekake (Mahatsekake et al. , Sulfur Letters , 7(6): 231-8 (1988)); The reaction can be carried out using the process described by Ishii (Ishii et al. , Heteroatom Chemistry , 25(6): 658-673 (2014)); It can be synthesized using the process described in U.S. Patent Application Serial No. 14/951,628.
無取代的二噻吩並[1,2,3]噻二唑,然後可鹵化或以其他方式具備反應性基(Q),使其與本文所述之各種Sp基團(Ar、Z及/或pi-2)偶合。例如,單鹵化二噻吩並[1,2,3]噻二唑衍生物,有用於二噻吩並[1,2,3]噻二唑基之小分子半導體或區域規則聚合物。 An unsubstituted dithieno[1,2,3]thiadiazole which can then be halogenated or otherwise provided with a reactive group (Q) to render it with the various Sp groups described herein (Ar, Z and/or Pi-2) coupling. For example, monohalogenated dithieno[1,2,3]thiadiazole derivatives have small molecule semiconductors or regioregular polymers for dithieno[1,2,3]thiadiazolyl groups.
為了說明,二噻吩並[1,2,3]噻二唑可被溴化而提供單溴化或二溴化衍生物,然後使用其與其他二噻吩並[1,2,3]噻二唑及/或不同的具有互補的反應性基之共軛基團偶合,以提供根據本發明的各種分子及聚合物半導體。 To illustrate, dithieno[1,2,3]thiadiazole can be brominated to provide a monobrominated or dibrominated derivative, which is then used in combination with other dithieno[1,2,3]thiadiazoles. And/or different conjugated groups having complementary reactive groups are coupled to provide various molecules and polymer semiconductors in accordance with the present invention.
例如,單溴化二噻吩並[1,2,3]噻二唑,可使用傳統的溴化方式,由對應前驅物合成,其中使用鹵素的化學計量以優化單溴化:
單溴化二噻吩並[1,2,3]噻二唑的替代途徑為從單溴化衍生物開始,藉由重氮化建構噻二唑環:
二溴化二噻吩並[1,2,3]噻二唑,可使用傳統的溴化方式,由對應前驅物合成,其中使用2倍鹵素的化學計量以優化二溴化,例如
類似單溴化版本,可能從二溴化二噻吩胺基硫醇,藉由重氮化建構噻二唑環:
對於本發明的化合物為具有M1單元:
二噻吩並[1,2,3]噻二唑的其他可聚合的衍生物,包括二甲錫烷基化二噻吩並[1,2,3]噻二唑及二硼酸化二噻吩並[1,2,3]噻二唑。二甲錫烷基化二噻吩並[1,2,3]噻二唑衍生物,可根據以下方式合成:
溴化或金屬化二噻吩並[1,2,3]噻二唑衍生物,可使用作為M1單元,以與具有互補的反應性基的M2單元共聚合。或者,溴化或金屬化二噻吩並[1,2,3]噻二唑衍生物可與一個或一個以上的具有互補的反應性基的Sp基反應,以提供pi-延伸半導體化合物。使用於各種偶合或聚合反應之適合的互補的反應性基為本技術領域習知。特別是可使用如Yamamoto等文獻所述(Yamamoto,J.Organomet.Chem.,653:195-199(2002)、Walton et al.,Polymer Chemistry(Fred J.Davis ed.2004),p.158-187及Galbrecht et al.,Macromolecular Rapid Communications,28(4):387-394(2007))之施蒂勒(Stille)偶合或鈴木(Suzuki)偶合反應。 Brominated or metallated dithieno[1,2,3]thiadiazole derivatives can be used as M 1 units to copolymerize with M 2 units having complementary reactive groups. Alternatively, the brominated or metallated dithieno[1,2,3]thiadiazole derivative can be reacted with one or more Sp groups having complementary reactive groups to provide a pi-extended semiconductor compound. Suitable complementary reactive groups for use in various coupling or polymerization reactions are well known in the art. In particular, it can be used as described in Yamamoto et al. (Yamamoto, J. Organomet. Chem . , 653: 195-199 (2002), Walton et al. , Polymer Chemistry (Fred J. Davis ed. 2004), p. 158- 187 and Stillchole et al. , Macromolecular Rapid Communications , 28(4): 387-394 (2007)) Still coupling or Suzuki coupling reaction.
M1的同元聚合以及M1與M2的共聚合,可藉由各種本技術領域習知的反應達成,包括類似Yamamoto等文獻所述之製程(Yamamoto,J.Organomet.Chem.,653:195-199(2002)、Walton et al.,Polymer Chemistry(Fred J.Davis ed.2004),p.158-187及Galbrecht et al.,Macromolecular Rapid Communications,28(4):387-394(200)),其全部公開內容,基於所有目的被併入本文的參考。特別是可使用施蒂勒(Stille)偶合或鈴木(Suzuki)偶合反應,製備根據本發明的具有高分子量及高產率(75%)的聚合物化合物,其係藉由1H NMR光譜、元素分析及/或GPC量測確認。以下方式概述了可使用於M1本身的聚合或M1與M2的共聚合之幾種例示的反應。需理解地,可聚合的基(例如SnR3、BR2、MgX、ZnX及Br,X為鹵素及R為烷基),可以在M1與M2之間逆轉。類似的反應可用於式(I)的基團與Ar、pi-2及/或X基團的偶合,以提供包括除式(I)的基團外之如Ar、pi-2及/或X基團的重複單元M1。 M 1 and polymerized with the element M 1 and M 2 the copolymerization, may be by various conventional in the art to achieve a reaction, comprising a process similar to Yamamoto et al of the document (Yamamoto, J.Organomet.Chem, 653.: 195-199 (2002), Walton et al. , Polymer Chemistry (Fred J. Davis ed. 2004), p. 158-187 and Galbrecht et al. , Macromolecular Rapid Communications , 28(4): 387-394 (200) The entire disclosure is hereby incorporated by reference in its entirety for all purposes. In particular, a Stille coupling or a Suzuki coupling reaction can be used to prepare a high molecular weight and a high yield according to the present invention ( 75%) of the polymer compound was confirmed by 1 H NMR spectroscopy, elemental analysis and/or GPC measurement. Can be reacted in the following manner outlined several embodiments for M or M 1 itself and the polymerization of copolymerization of M 2 1 illustrated. It is to be understood that polymerizable groups (for example, SnR 3 , BR 2 , MgX, ZnX and Br, X is a halogen and R is an alkyl group) can be reversed between M 1 and M 2 . A similar reaction can be used for the coupling of a group of formula (I) with an Ar, pi-2 and/or X group to provide a group other than formula (I) such as Ar, pi-2 and/or X. Repeat unit M 1 of the group.
以下所示的方式說明二溴化二噻吩並[1,2,3]噻二唑衍生物與pi-2基團的二金屬化衍生物之偶合:
以下所述之反應可類似地使用於二溴化二噻吩並[1,2,3]噻二唑衍生物與具有互補的反應性基之Sp基之偶合,以提供更延伸的M1單元,例如:
以下方式說明了根據本發明的其他聚合物之其他可能的合
成:
不希望受任何特定理論的束縛,據信具有區域規則聚合物主鏈的本發明的聚合物可以導致更高的分子量,更多的π-共軛結構,並因此導致更好的電荷傳輸效率。因此,在製備本發明的聚合物時,本發明可包括分離特定的平均分子量部分,及/或富含及/或分離具有2種或其以上的立體異構體之M1及/或M2的特定立體異構體。 Without wishing to be bound by any particular theory, it is believed that the polymers of the present invention having a regioregular polymer backbone can result in higher molecular weights, more π-conjugated structures, and thus better charge transport efficiency. Thus, in the preparation of the polymers of the invention, the invention may comprise isolating a particular average molecular weight fraction, and/or enriching and/or isolating M 1 and/or M 2 having two or more stereoisomers. Specific stereoisomers.
使用類似上述的偶合反應結合本發明的聚合物之製備,根據本發明的各種分子半導體化合物,可藉由不同的二噻吩並[1,2,3]噻二唑之單或二-鹵化/金屬化衍生物與間隔基的反應而製備,如以下說明:
本文揭露之半導體化合物,可為環境條件下安定(環境安定)及可溶於通常的溶劑。如本文所使用,一化合物被視為電性上「環境安定」或「環境條件下安定」,係指當該化合物暴露於環境條件下,例如空氣、環境溫度及濕度一段時間後,顯示載子遷移率維持在其初始值。例如根據本發明的化合物可視為環境安定,若是在暴露於包括空氣、濕度及溫度之環境條件3天、5天或10天後,顯示載子遷移率之變化不超過20%或不超過10%之初始值。此外,一化合物可被視為環境安定,若是對應的膜之光吸收,在暴露於包括空氣、濕度及溫度之環境條件3天、5天或10天後,其變化不超過20%(較佳為變化不超過10%)之初始值。 The semiconductor compounds disclosed herein are stable under ambient conditions (environmentally stable) and are soluble in common solvents. As used herein, a compound is considered to be electrically "environmentally stable" or "environmentally stable" when it is exposed to environmental conditions such as air, ambient temperature and humidity for a period of time. The mobility is maintained at its initial value. For example, a compound according to the invention may be considered to be environmentally stable, exhibiting a change in carrier mobility of no more than 20% or no more than 10% after exposure to environmental conditions including air, humidity and temperature for 3, 5 or 10 days. The initial value. In addition, a compound can be considered to be environmentally stable. If it is absorbed by the corresponding film, it does not change by more than 20% after exposure to environmental conditions including air, humidity and temperature for 3 days, 5 days or 10 days. The initial value of the change is no more than 10%).
基於本發明的化合物的OTFT,可以在環境條件下具有長期可操作性及持續的高性能。例如,基於本發明的化合物的某些實施例的OTFT,可在高濕環境中,保持令人滿意的元件性能。本發明化合物的某些實施例,亦可在寬範圍的退火溫度下表現出優異的熱穩定性。光伏元件,可以在延長的時間,維持令人滿意的功率轉換效率。 The OTFT based on the compound of the present invention can have long-term operability and sustained high performance under ambient conditions. For example, OTFTs based on certain embodiments of the compounds of the present invention can maintain satisfactory component performance in high humidity environments. Certain embodiments of the compounds of the invention may also exhibit excellent thermal stability over a wide range of annealing temperatures. Photovoltaic components can maintain satisfactory power conversion efficiency over extended periods of time.
如本文所使用,至少0.1mg的化合物可溶解於1mL的溶劑中時,該化合物可被認為可溶於1mL的該溶劑。常見的有機溶劑之例,包括石油醚;乙腈;如苯、甲苯、二甲苯及均三甲苯之芳香族烴;如丙酮及甲基乙基酮之酮類;如四氫呋喃、二噁烷、雙(2-甲氧基乙基)醚、二乙醚、二異丙基醚及第3丁基甲基醚之醚類;如甲醇、乙醇、丁醇及異丙醇之醇類;如己烷之脂肪族烴;如乙酸甲酯、乙酸乙酯、甲酸甲酯、甲酸乙酯、乙酸異丙酯及乙酸丁酯之酯類;如二甲基甲醯胺及二甲基乙醯胺之醯胺類;如二甲基亞碸之亞碸類;如二氯甲烷、氯仿、二氯乙烷、氯苯、二氯苯及 三氯苯之鹵代脂肪族及芳香族烴;以及如環戊酮、環己酮及2-甲基吡咯烷酮之環狀溶劑。本發明的化合物在通常的有機溶劑,如二甲苯、二氯苯(DCB)及其他氯化烴(CHC)中,在室溫下可具有高達60g/L的溶解度。 As used herein, when at least 0.1 mg of the compound is soluble in 1 mL of the solvent, the compound can be considered to be soluble in 1 mL of the solvent. Examples of common organic solvents include petroleum ether; acetonitrile; aromatic hydrocarbons such as benzene, toluene, xylene, and mesitylene; ketones such as acetone and methyl ethyl ketone; such as tetrahydrofuran, dioxane, and bis ( An ether of 2-methoxyethyl)ether, diethyl ether, diisopropyl ether and a third butyl methyl ether; an alcohol such as methanol, ethanol, butanol or isopropanol; an aliphatic hydrocarbon such as hexane Such as methyl acetate, ethyl acetate, methyl formate, ethyl formate, isopropyl acetate and butyl acetate; such as dimethyl carbamide and dimethyl acetamide amide; Anthracene of dimethyl hydrazine; such as dichloromethane, chloroform, dichloroethane, chlorobenzene, dichlorobenzene and Halogenated aliphatic and aromatic hydrocarbons of trichlorobenzene; and cyclic solvents such as cyclopentanone, cyclohexanone and 2-methylpyrrolidone. The compounds of the present invention may have a solubility of up to 60 g/L at room temperature in typical organic solvents such as xylene, dichlorobenzene (DCB) and other chlorinated hydrocarbons (CHC).
本發明的化合物,除了其他更昂貴的例如氣相沉積的方法之外,可以使用溶液加工技術製造成各種製品。各種溶液加工技術已經用於有機電子學。常見的溶液加工技術,包括例如旋轉塗佈、滴鑄、區域澆鑄、浸塗、刮刀塗佈或噴塗。溶液加工技術的其他例為印刷。如本文所使用,「印刷」包括如噴墨印刷、微分配等的非接觸方法,以及如網版印刷、凹版印刷、膠版印刷、柔性版印刷、平版印刷、移印、微接觸印刷凹版等的接觸方法。 The compounds of the present invention can be fabricated into a variety of articles using solution processing techniques in addition to other more expensive processes such as vapor deposition. Various solution processing techniques have been used in organic electronics. Common solution processing techniques include, for example, spin coating, drop casting, zone casting, dip coating, knife coating or spray coating. Another example of solution processing techniques is printing. As used herein, "printing" includes non-contact methods such as inkjet printing, micro-distribution, and the like, as well as screen printing, gravure printing, offset printing, flexographic printing, lithography, pad printing, microcontact printing gravure, and the like. Contact method.
本發明的化合物,可用於製備半導體材料(例如組成物及複合材料),其又可用於製造各種製品、結構及元件。於一些實施例,結合一種或多種本發明的化合物的半導體材料,可表現出n型半導體活性、雙極活性、光吸收及發光。 The compounds of the present invention are useful in the preparation of semiconductor materials (e.g., compositions and composites) which in turn can be used in the manufacture of various articles, structures, and components. In some embodiments, a semiconductor material incorporating one or more compounds of the present invention can exhibit n-type semiconductor activity, bipolar activity, light absorption, and luminescence.
因此,本發明進一步提供了製備半導體材料的方法。該方法可包括製備包含溶解或分散於例如溶劑或溶劑混合物之液體介質的本文所揭露的一種或多種化合物的組成物,將該組成物沉積於基板上,以提供半導體材料前驅物,以及加工(例如加熱)該半導體前驅物,以提供包括本文揭露的化合物的半導體材料(例如薄膜半導體)。於各種實施例,該液體介質可為有機溶劑、如水的無機溶劑或其組合。於一些實施例,該組成物可更包括獨立地選自粘度調節劑、洗滌劑、分散劑、黏結劑、相容劑、硬化劑、引發劑、濕潤劑(humectants)、消泡劑、潤濕劑(wetting agents)、pH調節劑、殺菌劑(biocides)及抑菌劑(bacteriostats)群組中的一種或一種以上的添加劑。例如,可包括表面活性劑及/或聚合物(例如聚苯乙烯、聚乙烯、聚-α-甲基苯乙烯、聚異丁烯、聚丙烯、聚甲基丙烯酸甲酯等)作為分散劑、黏結劑、相容劑及/或消泡劑。於一些實施例,沉積步驟可以藉由包括噴墨印刷及各種接觸印刷技術(例如網版印刷、凹版印刷、膠版印刷、移印、平版印刷、柔性版印刷及微接觸印刷)之印刷方法實施。於其他實施例,沉積步驟可以藉由旋轉塗佈、滴鑄、區域澆鑄、浸塗,刮刀塗 佈或噴塗法實施。 Accordingly, the present invention further provides methods of making semiconductor materials. The method can include preparing a composition comprising one or more of the compounds disclosed herein dissolved or dispersed in a liquid medium such as a solvent or solvent mixture, depositing the composition on a substrate to provide a semiconductor material precursor, and processing ( The semiconductor precursor is, for example, heated to provide a semiconductor material (e.g., a thin film semiconductor) comprising the compounds disclosed herein. In various embodiments, the liquid medium can be an organic solvent, an inorganic solvent such as water, or a combination thereof. In some embodiments, the composition may further comprise independently selected from the group consisting of a viscosity modifier, a detergent, a dispersant, a binder, a compatibilizer, a hardener, an initiator, a humectant, an antifoaming agent, and a wetting agent. One or more additives in the group of wetting agents, pH adjusters, biocides, and bacteriostats. For example, a surfactant and/or a polymer (for example, polystyrene, polyethylene, poly-α-methylstyrene, polyisobutylene, polypropylene, polymethyl methacrylate, etc.) may be included as a dispersing agent and a binder. , compatibilizer and / or defoamer. In some embodiments, the deposition step can be performed by a printing process including inkjet printing and various contact printing techniques such as screen printing, gravure printing, offset printing, pad printing, lithography, flexographic printing, and microcontact printing. In other embodiments, the deposition step can be applied by spin coating, drop casting, zone casting, dip coating, knife coating Fabric or spray method implementation.
各種製品包括電子元件、光學元件及光電元件,例如薄膜半導體、場效電晶體(例如薄膜電晶體)、光伏器,光電感測器、如有機發光二極體(OLED)及有機發光電晶體(OLET)之有機發光元件、互補金屬氧化物半導體(CMOS)、互補反相器、二極體、電容器、感知器、D正反器、整流器及環形振盪器,該等使用本發明的化合物係以製備該等的方法包括於本發明的範圍。本發明的化合物,可以在該等元件的製造及/或使用中提供加工及操作的優點。例如,如本文所述的各種元件的製品,可包括具有本發明的半導體材料及基板構件及/或介電質構件的複合材料。該基板構件,可為選自摻雜的矽、氧化銦錫(ITO)、ITO塗覆的玻璃,ITO塗覆的聚醯亞胺或其他塑料、單獨的或塗覆於聚合物或其他基板的鋁或其他金屬、摻雜的聚噻吩等。介電質構件,可由如各種氧化物(例如SiO2、Al2O3、HfO2)的無機介電材料,如各種聚合物材料(例如聚碳酸酯、聚酯、聚苯乙烯、聚鹵代乙烯、聚丙烯酸酯)的有機介電材料及自組裝超晶格/自組裝奈米介電(SAS/SAND)材料(例如Yoon等人,PNAS,102(13):4678-4682(2005)中描述的,其全部揭露的內容引用併入本文),以及混合有機/無機介電材料(例如在美國專利申請第11/642,504號中描述的,其全部揭露的內容引用併入本文)。於一些實施例,介電質構件可包括美國專利申請第11/315,076、60/816,952及60/861,308號中描述的交聯的聚合物混合物,其各自的全部揭露內容引用併入本文。複合物,亦可包括一個或多個電接觸。適合作為源極、汲極及柵極電極的材料,包括金屬(例如Au、Al、Ni、Cu)、透明導電氧化物(例如ITO、IZO、ZITO、GZO、GIO、GITO)以及導電聚合物(例如聚(3,4-亞乙基二氧噻吩)聚(苯乙烯磺酸鹽)(PEDOT:PSS)、聚苯胺(PANI)、聚吡咯(PPy))。本文所述的一種或多種複合材料,可以在各種有機電子、光學及光電元件(例如有機薄膜電晶體(OTFT),具體地有機場效電晶體(OFET))以及感知器、電容器、單極電路、互補電路(例如反相器電路)等具體化。 Various products include electronic components, optical components, and optoelectronic components, such as thin film semiconductors, field effect transistors (eg, thin film transistors), photovoltaics, photodetectors, such as organic light emitting diodes (OLEDs), and organic light emitting transistors ( OLET) organic light-emitting elements, complementary metal oxide semiconductors (CMOS), complementary inverters, diodes, capacitors, perceptrons, D flip-flops, rectifiers, and ring oscillators, which use the compounds of the present invention Methods of preparing these are included within the scope of the invention. The compounds of the present invention may provide processing and handling advantages in the manufacture and/or use of such elements. For example, articles of various elements as described herein can include composite materials having the semiconductor materials of the present invention and substrate members and/or dielectric members. The substrate member may be selected from the group consisting of doped germanium, indium tin oxide (ITO), ITO coated glass, ITO coated polyimide or other plastic, alone or coated on a polymer or other substrate. Aluminum or other metals, doped polythiophenes, and the like. The dielectric member may be made of an inorganic dielectric material such as various oxides (for example, SiO 2 , Al 2 O 3 , HfO 2 ), such as various polymer materials (for example, polycarbonate, polyester, polystyrene, polyhalogenated). Organic dielectric materials of ethylene and polyacrylates and self-assembled superlattice/self-assembled nano dielectric (SAS/SAND) materials (eg, Yoon et al., PNAS, 102(13): 4678-4682 (2005) The entire disclosure of which is incorporated herein by reference, and the disclosure of the entire disclosure of the entire disclosure of the disclosure of the entire disclosure of the disclosure of the disclosure of the disclosure of the disclosure of the entire disclosure of In some embodiments, the dielectric member can include crosslinked polymer blends as described in U.S. Patent Application Serial Nos. The composite may also include one or more electrical contacts. Suitable materials for source, drain and gate electrodes, including metals (such as Au, Al, Ni, Cu), transparent conductive oxides (such as ITO, IZO, ZITO, GZO, GIO, GITO) and conductive polymers ( For example, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy)). One or more of the composite materials described herein can be used in a variety of organic electronic, optical, and optoelectronic components (eg, organic thin film transistors (OTFTs), specifically organic field effect transistors (OFETs), as well as perceptrons, capacitors, unipolar circuits A specific circuit such as a complementary circuit (for example, an inverter circuit).
本發明的化合物有用的其他製品為光伏元件或太陽能電池。特別地,本發明的聚合物可以表現出寬光學吸收及/或調節的氧化還原性質 及本體載子遷移率,使其符合如此的應用之期望。例如,本文所述的聚合物可以在光伏元件的設計中使用作為的供體(p型)半導體,其包括形成p-n接面的相鄰n型半導體材料。該聚合物可為薄膜半導體的形式,其可以沉積在基板上,以形成複合材料。在如此的元件中對本發明的聚合物的開發係在本領域技術人員的知識範圍內。 Other articles useful in the compounds of the invention are photovoltaic elements or solar cells. In particular, the polymers of the invention may exhibit broad optical absorption and/or regulated redox properties And ontobody carrier mobility, making it meet the expectations of such applications. For example, the polymers described herein can be used as a donor (p-type) semiconductor in the design of photovoltaic elements, including adjacent n-type semiconductor materials that form p-n junctions. The polymer can be in the form of a thin film semiconductor that can be deposited on a substrate to form a composite. The development of the polymers of the present invention in such elements is within the knowledge of those skilled in the art.
因此,本發明的其他面向,係關於結合本發明的半導體材料的有機場效電晶體的製造方法。本發明的半導體材料,可使用於製造各種類型的有機場效電晶體,包括頂柵極-頂接觸電容器結構、頂柵極-底接觸電容器結構、底柵極-頂接觸電容器結構及底閘極-底接觸電容器結構。圖1a、1b、1c及1d表示四種常見類型的OFET結構:圖1a表示底柵極-頂接觸結構,圖1b表示底柵極-底接觸結構,圖1c表示頂柵極-底接觸結構,及圖11表示頂柵極-頂接觸結構。如圖1a、1b、1c及1d所示,OFET可包括介電質層(例如分別在圖1a、1b、1c及1d中表示為8、8’、8”及8''')、半導體/通道層(例如分別在圖1a、1b、1c及1d中表示為6、6’、6”及6''')、柵極接觸(例如分別在圖1a、1b、1c及1d中表示為10、10’、10”及10''')、基板(例如分別在圖1a、1b、1c及1d中表示為12、12’、12”及12''')、源極及閘極接觸(例如分別在圖1a、1b、1c及1d中表示為2、2’、2”、2'''、4、4’、4”及4''')。 Accordingly, other aspects of the present invention are directed to a method of fabricating an organic field effect transistor incorporating a semiconductor material of the present invention. The semiconductor material of the present invention can be used to fabricate various types of organic field effect transistors, including top gate-top contact capacitor structures, top gate-bottom contact capacitor structures, bottom gate-top contact capacitor structures, and bottom gates. - Bottom contact capacitor structure. Figures 1a, 1b, 1c, and 1d show four common types of OFET structures: Figure 1a shows a bottom gate-top contact structure, Figure 1b shows a bottom gate-bottom contact structure, and Figure 1c shows a top gate-bottom contact structure. And Figure 11 shows the top gate-top contact structure. As shown in Figures 1a, 1b, 1c and 1d, the OFET can comprise a dielectric layer (e.g., 8, 8', 8" and 8" in Figures 1a, 1b, 1c and 1d, respectively), semiconductor/ Channel layers (eg, 6, 6', 6", and 6"' in Figures 1a, 1b, 1c, and 1d, respectively), gate contacts (eg, 10 in Figures 1a, 1b, 1c, and 1d, respectively) , 10', 10" and 10"'), the substrate (for example, 12, 12', 12" and 12"' in Figures 1a, 1b, 1c and 1d), source and gate contacts ( For example, they are represented by Figures 2a, 1b, 1c, and 1d as 2, 2', 2", 2"', 4, 4', 4", and 4"'), respectively.
於某些實施例,OTFT元件,可在摻雜的矽基板上使用本發明的半導體化合物製造,可在頂接觸幾何形狀中使用SiO2作為介電質。於具體實施例,結合本發明的至少一半導體化合物之活性半導體層,可在室溫或升高的溫度下進行沈積。於其他實施例,結合本發明的至少一半導體化合物之活性半導體層,可應用本文所述的旋轉塗佈或印刷。對於頂接觸元件,可使用陰影光罩,在膜的頂部上圖案化金屬接觸。 In certain embodiments, an OTFT element can be fabricated on a doped germanium substrate using the semiconductor compound of the present invention, and SiO 2 can be used as a dielectric in the top contact geometry. In a specific embodiment, in combination with the active semiconductor layer of at least one semiconductor compound of the present invention, deposition can be carried out at room temperature or elevated temperature. In other embodiments, the spin coating or printing described herein can be applied in conjunction with the active semiconductor layer of at least one semiconductor compound of the present invention. For top contact elements, a shadow mask can be used to pattern the metal contacts on top of the film.
於某些實施例,OTFT元件,可以在塑膠箔上使用本發明的化合物製造,在頂柵極-底接觸的幾何形狀,使用聚合物作為介電質。於特定實施例,結合引入本發明的至少一半導體化合物的活性半導體層,可以在室溫或升溫下沉積。於其他實施例,結合本發明的至少一半導體化合物之活性半導體層,可應用本文所述的旋轉塗佈或印刷。柵極及源極/汲極接 觸,可由Au、其他金屬或導電聚合物製成,藉由氣相沉積及/或印刷沉積。 In certain embodiments, an OTFT element can be fabricated on a plastic foil using the compound of the present invention, using a polymer as the dielectric in the top gate-bottom contact geometry. In a specific embodiment, the active semiconductor layer incorporating the at least one semiconductor compound of the present invention may be deposited at room temperature or elevated temperature. In other embodiments, the spin coating or printing described herein can be applied in conjunction with the active semiconductor layer of at least one semiconductor compound of the present invention. Gate and source/drain The touch can be made of Au, other metals or conductive polymers, deposited by vapor deposition and/or printing.
類似地,本發明的其他面向,係關於結合本發明的一種或一種以上的半導體材料,製造有機發光電晶體、有機發光二極體(OLED)或有機光伏元件的方法。圖2表示可結合本發明的一種或或一種以上的半導體化合物作為供體材料的本體異質接面有機光伏元件(亦稱為太陽能電池)的代表性結構。如圖所示,代表性的太陽能電池通常包括基板20(例如玻璃)、陽極22(例如ITO)、陰極26(例如鋁或鈣)以及在陽極和陰極之間的活性層24,其可結合本發明的一種或一種以上的半導體化合物作為電子供體(p-通道)材料。圖3表示OLED的代表性結構,其可結合本發明的一種或一種以上的半導體化合物作為電子傳輸及/或發光及/或電洞傳輸材料。如圖所示,OLED通常包括基板30(未圖示)、透明陽極32(例如ITO)、陰極40(例如金屬)及一個或一種以上的有機層,其可以結合本發明的一種或一種以上的半導體化合物作為電洞傳輸(n-通道)(如圖所示的層34)及/或發光(如圖所示的層36)及/或電子傳輸(p通道)材料(如圖所示的層38)。 Similarly, other aspects of the invention relate to methods of fabricating an organic light-emitting transistor, an organic light-emitting diode (OLED) or an organic photovoltaic element in conjunction with one or more semiconductor materials of the present invention. 2 shows a representative structure of a bulk heterojunction organic photovoltaic element (also referred to as a solar cell) that can incorporate one or more semiconductor compounds of the present invention as a donor material. As shown, a representative solar cell typically includes a substrate 20 (eg, glass), an anode 22 (eg, ITO), a cathode 26 (eg, aluminum or calcium), and an active layer 24 between the anode and cathode, which may be combined with the present invention. One or more semiconductor compounds of the invention are used as electron donor (p-channel) materials. 3 shows a representative structure of an OLED that can be combined with one or more semiconductor compounds of the present invention as an electron transport and/or luminescent and/or hole transport material. As shown, the OLED typically includes a substrate 30 (not shown), a transparent anode 32 (eg, ITO), a cathode 40 (eg, a metal), and one or more organic layers that can incorporate one or more of the present invention. The semiconductor compound acts as a hole transport (n-channel) (layer 34 as shown) and/or luminescence (layer 36 as shown) and/or electron transport (p-channel) material (layer as shown) 38).
進行分子軌道(MO)的計算(B3LYP/6-31G*)(Spartan’08 Wavefunction,Inc.,Irvine,CA),以研究本文揭露的二噻吩乙二噻唑單元的前緣分子軌道能量及分子軌道拓樸。結果歸納於以下表1中。 Molecular orbital (MO) calculations (B3LYP/6-31G*) (Spartan'08 Wavefunction, Inc., Irvine, CA) were performed to study the leading-edge molecular orbital energy and molecular orbitals of the dithiophene ethylenedithiazole units disclosed herein. Topology. The results are summarized in Table 1 below.
本說明書中引用的所有出版品,包括但不限於專利及專利申請文獻,通過引用併入本文,如同每個單獨的出版品被具體地及單獨地指出,通過引用併入本文,如同完全列舉。 All publications cited in this specification, including but not limited to, patents and patent applications, are hereby incorporated by reference in their entirety as if individually individually individually individually individually individually individually
本發明包括不脫離本發明的精神或必要特徵之其它具體形式的實施例。因此,前述實施例在所有方面都被認為是說明性的而不是限制本文所述的本發明。因此,本發明的範圍係由所附的申請專利範圍表示,而非前述說明,並且等同於申請專利範圍之含義及範圍內的所有變更,係意圖包括於其中。 The invention includes other specific forms of embodiments that do not depart from the spirit or essential characteristics of the invention. The foregoing embodiments are therefore to be considered in all respects Therefore, the scope of the invention is intended to be embraced by the scope of the appended claims
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JP2016506625A (en) | 2012-12-18 | 2016-03-03 | メルク パテント ゲーエムベーハー | Luminescent body having a condensed ring system |
WO2014204082A1 (en) | 2013-06-20 | 2014-12-24 | 경상대학교산학협력단 | Organic semiconductor compound, method for preparing same, and organic solar cell employing same |
EP3028317A1 (en) | 2014-02-11 | 2016-06-08 | SABIC Global Technologies B.V. | Compounds containing electron rich and electron deficient regions and their use in organic electronic applications |
US9666805B2 (en) * | 2014-11-25 | 2017-05-30 | Northwestern University | Bithiophene sulfonamide-based molecular and polymeric semiconductors |
-
2017
- 2017-01-09 US US15/772,923 patent/US10355213B2/en active Active
- 2017-01-09 TW TW106100597A patent/TWI632146B/en active
- 2017-01-09 WO PCT/US2017/012697 patent/WO2017120572A1/en unknown
- 2017-01-09 CN CN201780005475.1A patent/CN108431076B/en active Active
- 2017-01-09 EP EP17736503.8A patent/EP3400253B1/en active Active
- 2017-01-09 JP JP2018521254A patent/JP2019503982A/en active Pending
- 2017-01-09 KR KR1020187019337A patent/KR20180103055A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI702405B (en) * | 2019-08-12 | 2020-08-21 | 久盛光電股份有限公司 | Photosensitive thin film transistor and electromagnetic wave detection device |
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JP2019503982A (en) | 2019-02-14 |
TWI632146B (en) | 2018-08-11 |
KR20180103055A (en) | 2018-09-18 |
EP3400253B1 (en) | 2023-10-04 |
EP3400253A4 (en) | 2019-09-11 |
US10355213B2 (en) | 2019-07-16 |
CN108431076A (en) | 2018-08-21 |
CN108431076B (en) | 2020-12-15 |
WO2017120572A1 (en) | 2017-07-13 |
US20180323375A1 (en) | 2018-11-08 |
EP3400253A1 (en) | 2018-11-14 |
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