CN114300636B - Anode structure, anode structure manufacturing method and display - Google Patents
Anode structure, anode structure manufacturing method and display Download PDFInfo
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- CN114300636B CN114300636B CN202111614420.5A CN202111614420A CN114300636B CN 114300636 B CN114300636 B CN 114300636B CN 202111614420 A CN202111614420 A CN 202111614420A CN 114300636 B CN114300636 B CN 114300636B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 104
- 238000000034 method Methods 0.000 claims description 56
- 238000004140 cleaning Methods 0.000 claims description 30
- 238000004380 ashing Methods 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 25
- 238000001312 dry etching Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 11
- 238000002791 soaking Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000007641 inkjet printing Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
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- 230000000977 initiatory effect Effects 0.000 claims description 2
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- 238000002310 reflectometry Methods 0.000 abstract description 12
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- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000764238 Isis Species 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
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Abstract
The invention relates to an anode structure, an anode structure manufacturing method and a display, wherein the anode structure comprises the following components: the device comprises a substrate and N structural units, wherein the N structural units are arranged on the substrate at equal intervals; each structural unit comprises: the structure membrane layer and the arc-shaped mixed membrane layer are arranged on the substrate, and the mixed membrane layer coats the structure membrane layer and is arranged on the substrate. The arc-shaped mixed film layer coating structure film layer manufactured by the invention not only improves the reflectivity and brightness of the anode structure, but also improves the luminous efficiency of the product and enlarges the visual angle of the product.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectricity, in particular to an anode structure, an anode structure manufacturing method and a display.
Background
In the process of preparing Organic Light Emitting Diodes (OLEDs), the anode material needs to have a high reflectance, a high work function and excellent conductivity, for example, ti, al, ITO, which are commonly used materials. Wherein the reflectivity of the anode is one of the important parameters affecting the brightness and luminous efficiency of the top-emission device, it is common to increase the reflectivity by changing the anode material or structure. At present, the reflectivity of the anode is usually about 90%, and is difficult to be substantially improved, ag is a good material for improving the reflectivity, but ideal mass production conditions cannot be achieved due to the fact that Ag is easy to produce metal pollution and poor in line width control capability in dry etching and wet etching. How to achieve high luminance and high luminous efficiency is a continuously pursuing goal of OLED device products.
Disclosure of Invention
The invention aims to provide an anode structure, an anode structure manufacturing method and a display, so as to improve the reflectivity and brightness of the anode structure.
To achieve the above object, the present invention provides an anode structure comprising:
the device comprises a substrate and N structural units, wherein N structural units are arranged on the substrate at equal intervals, and N is a positive integer greater than or equal to 1;
each of the structural units includes: the structure membrane layer is arranged on the substrate, and the structure membrane layer is coated by the mixed membrane layer and is arranged on the substrate.
Optionally, the structural film layer is a silicon nitride film layer, a silicon oxide film layer, an aluminum film layer or an aluminum oxide film layer.
Optionally, the mixed film layer is composed of an anodic metal and an oxide deposition.
The invention also provides a manufacturing method of the anode structure, which is used for preparing the anode structure, and comprises the following steps:
step S1: cleaning a substrate and heating and baking the substrate under vacuum conditions;
step S2: depositing a structural film layer with a certain thickness on the substrate by adopting a chemical vapor deposition mode or a physical sputtering deposition mode;
step S3: coating photoresist on the structural film layer by adopting a spin coating mode or an ink-jet printing mode to obtain first photoresist;
step S4: pre-baking, exposing, developing and baking the substrate with the first photoresist;
step S5: etching the baked substrate in an etching mode, and removing the first photoresist by adopting a dry etching ashing photoresist removing process to obtain an anode initial structure;
step S6: coating photoresist between two adjacent structure film layers on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain second photoresist, and pre-baking, exposing, developing and baking the substrate with the second photoresist to obtain an anode intermediate structure;
step S7: depositing a mixed film layer on the anode intermediate structure to obtain an anode final structure;
step S8: and removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the photoresist-removed anode final structure by adopting a wet cleaning process to obtain an anode structure.
Optionally, in step S3, the spin-coating speed is controlled between 1000-1500rpm, so that the thickness of the first photoresist is controlled within a range of 2-3 micrometers.
Optionally, in step S4, the pre-baking temperature is between 90 and 150 ℃, the pre-baking time is between 90 and 120 seconds, the exposure energy is between 150 and 350mj, the developing solution adopts 0.03 to 0.04 percent KOH or 2 to 3 percent TMAH, the developing time is between 100 and 150 seconds, the baking temperature is between 90 and 150 ℃, and the time is between 10 and 15 minutes.
Optionally, in step S5, the etching power is 350 W+ -20W, the bias power is 30 W+ -5W, the etching gas is CF4, the flow rate is 100-150sccm under the condition of the pressure of 1+ -0.15 Pa, the reaction temperature is controlled at 80 ℃ + -1 ℃, the time is 5-10S, the power used in the dry etching ashing photoresist removing process is 1000 W+ -100W, the bias power is 30 W+ -5W, the temperature is controlled at 23 ℃, the pressure is 1+ -0.15 Pa, the flow rate of the introduced oxygen is 50-150sccm, and the ashing time is 80-120S.
Optionally, in the step S7, the deposition sequence is Ti, al, tiN and ITO, the power is 1000 W+/-100W, the reaction pressure is 1+/-0.15 Pa, the flow rate of introduced argon is 30-50sccm, the flow rate of oxygen is 10-20sccm, the flow rate of nitrogen is 10-15sccm, and the temperature is controlled at 80-100 ℃.
Optionally, in the ashing photoresist removing process in the step S8, the using power is 1000 W+/-100W, the bias power is 30 W+/-5W, the control temperature is 23 ℃, the pressure is 1+/-0.15 Pa, the flow of the introduced oxygen is 50-150sccm, and the ashing time is 80-120S; in the wet cleaning process, NMP is selected to remove glue solution at 60+/-1 ℃, and soaking time is controlled at 15min in a soaking manner.
The invention also provides a display, which comprises the anode structure.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention relates to an anode structure, an anode structure manufacturing method and a display, wherein the anode structure comprises the following components: the device comprises a substrate and N structural units, wherein the N structural units are arranged on the substrate at equal intervals; each structural unit comprises: the structure membrane layer and the arc-shaped mixed membrane layer are arranged on the substrate, and the mixed membrane layer coats the structure membrane layer and is arranged on the substrate. The arc-shaped mixed film layer coating structure film layer manufactured by the invention not only improves the reflectivity and brightness of the anode structure, but also improves the luminous efficiency of the product and enlarges the visual angle of the product.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of an anode structure according to the present invention;
FIG. 2 is a flow chart of a method for fabricating an anode structure according to the present invention;
FIG. 3 is a schematic diagram of a method for fabricating an anode structure according to the present invention;
symbol description:
1-substrate, 2-structure film layer, 3-first photoresist, 4-second photoresist and 5-mixed film layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide an anode structure, an anode structure manufacturing method and a display, so as to improve the reflectivity and brightness of the anode structure.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Example 1
As shown in fig. 1, the present invention discloses an anode structure, which includes: a substrate 1 and N structural units, wherein N structural units are arranged on the substrate 1 at equal intervals, and N is a positive integer greater than or equal to 1; each of the structural units includes: the structure film layer 2 and the arc-shaped mixed film layer 5, wherein the structure film layer 2 is arranged on the substrate 1, and the mixed film layer 5 coats the structure film layer 2 and is arranged on the substrate 1.
As an alternative embodiment, the structural film layer 2 of the present invention is a silicon nitride film layer, a silicon oxide film layer, an aluminum film layer, or an aluminum oxide film layer. The mixed film layer 5 is formed by anode metal and oxide deposition.
Example 2
As shown in fig. 2, the present invention discloses a method for manufacturing an anode structure, which comprises:
step S1: cleaning the substrate 1 on which the CMOS drive array circuit arrangement has been completed and heating and baking under vacuum conditions; the substrate 1 after the heat baking is as shown in fig. 3 (a). Specifically, the particulate matters on the surface of the substrate 1 are removed by adopting a water-gas two-fluid mode, so that poor initiation points are prevented; heating and baking the substrate 1 under vacuum condition after cleaning to remove the water vapor layer adsorbed on the surface; specifically, the heating temperature is 150-200 ℃, the baking time is controlled to be 15-30min, and the cooling time is 30min plus or minus 5min.
Step S2: a chemical vapor deposition mode or a physical sputtering deposition mode is adopted to deposit a structural film layer 2 with a certain thickness on the substrate 1; the substrate 1 on which the structural film layer 2 is deposited is shown in fig. 3 (B). Further, a plasma enhanced chemical vapor deposition mode is adopted, and silane and ammonia gas are introduced into a reaction chamber according to a certain amount to deposit and obtain the structural film layer 2. Specifically, the silane flow rate is controlled to be 100-120sccm, ammonia flow rate controlled at 50-70sccm, and deposited structural film layer 2 of silicon nitride, silicon oxide, aluminum oxide, etc. with thickness controlled at。
Step S3: coating photoresist on the structural film layer 2 by adopting a spin coating mode or an ink-jet printing mode to obtain a first photoresist 3; specifically, the spin-coating speed is controlled to be between 1000 and 1500rpm, so that the thickness of the first photoresist 3 is controlled to be in the range of 2 to 3 micrometers.
Step S4: the substrate 1 with the first photoresist 3 is subjected to pre-baking, exposure, development, and baking, as shown in (C) of fig. 3. Specifically, the pre-baking temperature is between 90 and 150 ℃, the pre-baking time is between 90 and 120 seconds according to different selected photoresist, the exposure energy is between 150 and 350mj, the developing solution adopts 0.03 to 0.04 percent KOH or 2 to 3 percent TMAH, the developing time is between 100 and 150 seconds, the baking temperature is controlled between 90 and 150 ℃, and the time is between 10 and 15 minutes.
Step S5: etching the baked substrate 1 by adopting an etching mode, removing the first photoresist 3 by adopting a dry etching ashing photoresist removing process, and obtaining an anode initial structure shown in (E) of fig. 3, wherein the specific process is shown in (D) of fig. 3. Specifically, the conditions for etching the redundant structural film layers 2 are different according to the different structural film layers 2, silicon nitride is taken as an example, the etching power is 350 W+/-20W, bias power is 30 W+/-5W, etching gas is CF4, the flow is 100-150sccm under the condition that the pressure is 1+/-0.15 Pa, the reaction temperature is controlled at 80+/-1 ℃, and the etching can be completed after the time is 5-10 s. When the dry etching ashing photoresist removing process is adopted, the Power is 1000 W+/-100W, the bias Power is 30 W+/-5W, the temperature is controlled at 23 ℃, the pressure is 1+/-0.15 Pa, the flow rate of the introduced oxygen is 50-150sccm, and the ashing time is 80-120s.
Through the above process steps, the bottom layer structure of the anode can be realized, the X direction of the etched structure film layer 2 is 1.5 micrometers, the Y direction is 4.5 micrometers, and the thickness isIs a special structure of the (c).
Step S6: and coating photoresist between two adjacent structural film layers 2 on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain a second photoresist 4, and pre-baking, exposing, developing and baking the substrate 1 with the second photoresist 4 to obtain the structure (F) in the anode intermediate structure diagram 3. Step S6 is based on different exposure areas, and steps S3-S4 are repeated, wherein the process parameters of the steps comprise gluing, pre-baking, exposure, developing and final baking are consistent, and only the exposure areas are different from the exposure areas of step S4. The second photoresist 4 may be rectangular, trapezoidal, etc., and the present invention provides the second photoresist 4 to avoid directly connecting two adjacent structural units.
Step S7: anode metal and oxide layers are deposited on the anode intermediate structure inside the vacuum chamber, resulting in an anode final structure as shown in fig. 3 (G). Specifically, the deposition sequence is Ti, al, tiN and ITO, the Power is 1000 W+/-100W, the reaction pressure is 1+/-0.15 Pa, the flow of argon is 30-50sccm, the flow of oxygen is 10-20sccm, the flow of nitrogen is 10-15sccm, the shape of the photoresist is not affected in the process, and the temperature of the process is controlled at 80-100 ℃.
Step S8: and removing the second photoresist 4 on the anode final structure and the mixed film layer 5 on the second photoresist 4 by adopting a dry etching ashing photoresist removing process, and cleaning the photoresist-removed anode final structure by adopting a wet cleaning process to obtain an anode structure shown in (H) in fig. 3. Specifically, in the ashing photoresist removing process, power is 1000 W+/-100W, bias Power is 30 W+/-5W, the temperature is controlled at 23 ℃, the pressure is 1+/-0.15 Pa, the flow rate of the introduced oxygen is 50-150sccm, and the ashing time is 80-120s, so that the photoresist can be removed; in order to prevent the residues of photoresist and other foreign matters, the invention adopts a wet cleaning process to thoroughly clean, adopts NMP to remove glue solution at the temperature of 60+/-1 ℃, adopts a leaching or soaking mode, controls the soaking time to 15-30min if the spraying time is controlled to be 100+/-20 s, and finally finishes cleaning and then uses pure water for rinsing for multiple times.
Example 3
Step S1: and cleaning and baking the substrate with the finished CMOS drive array circuit arrangement to remove pollutants on the surface. Specifically, a water-gas two-fluid mode is adopted to remove particles on the surface, and the vacuum is more than 1 x 10 after cleaning -4 Heating at 180deg.C under Pa, baking for 25min to thoroughly remove water vapor, removing water vapor layer on surface, and cooling in cooling chamber for 30min.
Step S2: and (3) introducing silane and ammonia into the reaction chamber according to a certain amount by adopting a plasma enhanced chemical vapor deposition mode, and depositing a required structural film. Specifically, the deposited structural film is a silicon nitride film, the silane flow is controlled to be 110sccm, the ammonia flow is controlled to be 55sccm, and the target thickness isTo ensure uniformity of the final anode arc, the silicon nitride thickness non-uniformity is within + -3%.
Step S3: coating photoresist on the structural film layer by adopting a spin coating mode to obtain first photoresist; specifically, the negative photoresist which is commonly used at this time is used, and the thickness of the photoresist is 2.6 micrometers by controlling the rotating speed to be 1200+/-20 rpm.
Step S4: pre-baking, exposing, developing and baking the substrate with the first photoresist; specifically, the pre-baking temperature is set to be 100 ℃, the pre-baking time is set to be 90 seconds, the exposure energy is 220mj, the developing solution adopts KOH alkaline solution containing 0.03-0.04%, the developing time is set to be 140 seconds, the baking temperature is set to be 120 ℃, and the time is set to be 12 minutes.
Step S5: etching the silicon nitride film layer by using a dry etching mode, and removing the first photoresist by using an ashing photoresist removing process after dry etching to obtain an anode initial structure; specifically, the etching power is 350 W+/-20W, the Bias power is 30 W+/-5W, and the etching gas is CF 4 The flow is 110sccm, the pressure is 1+/-0.15 Pa, the temperature is controlled at 80+/-1 ℃, and the etching can be carried out for 8 secondsIs a silicon nitride film layer. And continuing to use Power 1000 W+/-100W, bias Power 30 W+/-5W, controlling the temperature to be 23 ℃, controlling the pressure to be 1+/-0.15 Pa, introducing oxygen to flow 130sccm and ashing for 110s, thus completing the photoresist film layer on the surface layer.
To this point, the fabrication of the anode substructure was completed, and the substructure was obtained as a silicon nitride by this example, with an array of post-etch structural film layers distributed, with an X-dimension of 1.5 microns, a Y-dimension of 4.5 microns, and a thickness ofIs a structure of (a).
Step S6: coating photoresist between two adjacent structure film layers on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain second photoresist, and pre-baking, exposing, developing and baking the substrate with the second photoresist to obtain an anode intermediate structure; the process comprises repeating step S3 and step S4, and comprises the steps of gluing, pre-baking, exposing, developing and final baking, wherein the process parameters are consistent, and the types of the selected photoresist are consistent. The exposure area in the step is outside the silicon nitride structures, specifically all areas between the two silicon nitride structures, the prepared photoresist pattern is in an inverted trapezoid shape, the height is 2.8 mu m, the photoresist thickness is thicker, so that the lower part of the trapezoid photoresist is fully exposed, and the basis is the convenience of the photoresist removing process in the eighth step.
Step S7: putting the substrate (namely the anode intermediate structure) with the silicon nitride and the inverted trapezoid second photoresist structure into a vacuum chamber to deposit anode metal and an oxide layer, so as to obtain an anode final structure; specifically, the deposition sequence is Ti, al, tiN and ITO, the Power is 1000 W+/-100W, the reaction pressure is 1+/-0.15 Pa, the flow of argon is 30-50sccm, the flow of oxygen is 15sccm, the flow of nitrogen is 14sccm, the shape of the photoresist is not affected in the process, and the temperature in the process of film formation is set at 100 ℃.
Step S8: removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the photoresist-removed anode final structure by adopting a wet cleaning process to obtain an anode structure; specifically, in the dry etching ashing photoresist removing process, power is 1000 W+/-100W, bias Power is 30 W+/-5W, the temperature is controlled at 23 ℃, the pressure is 1+/-0.15 Pa, the flow of the introduced oxygen is 130sccm, and the ashing time is 120s, so that the photoresist can be removed; in order to prevent the residues of photoresist and other foreign matters, a wet cleaning process is adopted to thoroughly clean, NMP is selected to remove glue solution at the temperature of 60+/-1 ℃, a soaking mode is adopted, the soaking time can be controlled to be 15min, and finally, pure water is used for rinsing for multiple times after the cleaning is finished.
Example 4
Step S1: and cleaning and baking the substrate with the finished CMOS drive array circuit arrangement to remove pollutants on the surface. Specifically, the cleaning mode adopts a water-air two-fluid mode to remove particles on the surface, and the vacuum is more than 1 x 10 after cleaning -4 Heating at 180deg.C under Pa, baking for 25min to thoroughly remove water vapor, removing water vapor layer on surface, and cooling in cooling chamber for 30min.
Step S2: and obtaining the structural film layer by adopting a physical sputtering deposition mode. Specifically, the deposited structural film is an aluminum film, the Power is 1000 W+/-100W, the reaction pressure is 1+/-0.15 Pa, the flow rate of introduced argon is 30-50sccm, and the target thickness isTo ensure uniformity of the final anode arc, the aluminum thickness non-uniformity is within + -3%.
Step S3: coating photoresist on the structural film layer by adopting an ink-jet printing mode to obtain first photoresist; specifically, the current use of the commonly used negative photoresist achieves a photoresist thickness of 2.6 micrometers by controlling the printing speed to be 200 mm/s.
Step S4: pre-baking, exposing, developing and baking the substrate with the first photoresist; specifically, the pre-baking temperature is set to 100 ℃, the pre-baking time is set to 90s, the exposure energy is set to 220mj, the pre-baking temperature is set to 100 ℃, the pre-baking time is set to 90s, the developing solution adopts 0.03-0.04% KOH alkaline solution, the developing time is set to 140s, the baking temperature is set to 120 ℃, and the time is set to 12 min;
step S5: etching the aluminum structure film layer by using a dry etching mode, and removing the first photoresist by using an ashing photoresist removing process after dry etching to obtain an anode initial structure; specifically, the etching power is 350 W+/-20W, bias power is 30 W+/-5W, etching gas is chlorine gas, flow is 30sccm, pressure is 1+/-0.15 Pa, temperature is controlled at 80+/-1 ℃, and time is 5s, so that the etching can be removedIs a metal film layer of aluminum. The photoresist film layer on the surface layer can be removed by continuously using the Power of 1000 W+/-100W, the bias Power of 30 W+/-5W, the temperature of 23 ℃ and the pressure of 1+/-0.15 Pa, the flow rate of the introduced oxygen is 130sccm, the ashing time is 110s, and the surface oxide layer can be removed by continuously using argon (10 sccm) for bombardment treatment for 5s under the conditions of low Power (direct current of 120W and bias Power of 10W-20W) in order to prevent the aluminum surface from being oxidized after the ashing is finished.
To this point, the fabrication of the anode substructure was completed, this example resulted in a substructure of metallic aluminum with an array of structures having an X-direction of 1.5 microns, a Y-direction of 4.5 microns, and a thickness ofIs a structure of (a).
Step S6: coating photoresist between two adjacent structural film layers on the anode initial structure by adopting an ink-jet printing mode based on different exposure areas to obtain second photoresist, and pre-baking, exposing, developing and baking the substrate with the second photoresist to obtain an anode intermediate structure; the process comprises repeating step S3 and step S4, including spreading glue, pre-baking, exposing, developing and final baking, and the process parameters are consistent, and the types of the selected photoresist are consistent. The exposure area in the step is outside the metal aluminum structures, specifically all areas between the two metal aluminum structures, the prepared photoresist pattern is in an inverted trapezoid shape, the height is 2.8 mu m, the photoresist thickness is thicker, so that the lower part of the trapezoid photoresist is exposed, and the basis is the convenience of the photoresist removing process in the eighth step.
Step S7: putting the substrate (namely the anode intermediate structure) with the metal aluminum and the inverted trapezoid second photoresist structure into a vacuum reaction chamber to deposit anode metal and an oxide layer, so as to obtain an anode final structure; specifically, the deposition sequence is Ti, al, tiN, ITO, the Power is 1000 W+/-100W, the reaction pressure is 1+/-0.15 Pa, the flow rate of argon gas is 30-50sccm, the flow rate of oxygen gas is 15sccm, the flow rate of nitrogen gas is 14sccm, the shape of photoresist is not affected in the process, and the temperature in the process of film formation is set at 100 ℃.
Step S8: removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the photoresist-removed anode final structure by adopting a wet cleaning process to obtain an anode structure; specifically, the dry etching ashing photoresist removing process uses Power 1000 W+/-100W, bias Power 30 W+/-5W, the temperature is controlled at 23 ℃, the pressure is controlled at 1+/-0.15 Pa, the flow of the introduced oxygen is 130sccm, and the ashing time is 120s, so that the photoresist can be removed; in order to prevent the residues of photoresist and other foreign matters, a wet cleaning process is adopted to thoroughly clean, NMP is selected to remove glue solution at the temperature of 60+/-1 ℃, a soaking mode is adopted, the soaking time can be controlled to be 15min, and finally, pure water is used for rinsing for multiple times after the cleaning is finished.
Example 5
The implementation sequence of the prior art scheme comprises the following steps: the method comprises the steps of firstly, cleaning and baking a substrate with a finished CMOS drive array circuit arrangement to remove pollutants on the surface; secondly, normally depositing a required metal and oxide film layer; thirdly, coating photoresist and pre-baking; fourthly, exposing and developing; fifthly, etching the required anode pattern by adopting an etching process; sixthly, removing the photoresist by adopting an etching process; seventh, adopting a wet cleaning process to remove photoresist residues; the anode prepared by the prior art scheme is in a general anode process mode, and the anode has no arc-shaped structure.
The anode structures prepared using prior art schemes, example 3 and example 4 were subjected to reflectance tests and product experiments. The results show that the reflectivity of example 3 is improved by about 12% compared with the reflectivity of the prior art, the reflectivity of example 4 is improved by about 15% compared with the reflectivity of the prior art, and the visual angle of the technical solutions of example 3 and example 4 is improved by more than 9 ° respectively compared with the prior art.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (3)
1. A method of fabricating an anode structure, the anode structure comprising: the substrate and N structural units are arranged on the substrate at equal intervals, N is a positive integer greater than 1, and each structural unit comprises: the structure rete and curved mixed rete, the structure rete sets up on the substrate, mixed rete cladding the structure rete just sets up on the substrate, the preparation method includes:
step S1: cleaning a substrate and heating and baking the substrate under vacuum conditions;
step S2: depositing a structural film layer with a certain thickness on the substrate by adopting a chemical vapor deposition mode or a physical sputtering deposition mode;
step S3: coating photoresist on the structural film layer by adopting a spin coating mode or an ink-jet printing mode to obtain first photoresist;
step S4: pre-baking, exposing, developing and baking the substrate with the first photoresist;
step S5: etching the baked substrate in an etching mode, and removing the first photoresist by adopting a dry etching ashing photoresist removing process to obtain an anode initial structure;
step S6: coating photoresist between two adjacent structure film layers on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain second photoresist, and pre-baking, exposing, developing and baking the substrate with the second photoresist to obtain an anode intermediate structure; step S6 is based on different exposure areas, and the steps S3-S4 are repeated, wherein the process parameters of the steps are consistent, such as gluing, pre-baking, exposure, development and final baking, and only the exposure areas are different from the exposure areas of step S4; the second photoresist is rectangular or trapezoidal; the second photoresist is to avoid directly connecting two adjacent structural units;
step S7: depositing a mixed film layer on the anode intermediate structure to obtain an anode final structure;
step S8: removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the photoresist-removed anode final structure by adopting a wet cleaning process to obtain an anode structure;
the step S1 specifically comprises the following steps: removing particles on the surface of the substrate by adopting a water-gas two-fluid mode, so as to prevent poor initiation points; heating and baking the substrate under vacuum condition after cleaning to remove the water vapor layer adsorbed on the surface; heating at 150-200deg.C, baking for 15-30min, and cooling for 30 min+ -5 min;
the step S2 specifically comprises the following steps: adopting a plasma enhanced chemical vapor deposition mode, introducing silane and ammonia into a reaction chamber according to a certain amount to precipitateObtaining a structural film layer; the flow rate of silane is controlled to be 100-120sccm, the flow rate of ammonia is controlled to be 50-70sccm, the deposited structural film layer is silicon nitride, silicon oxide and aluminum oxide, and the thickness is controlled to be
The step S7 specifically comprises the following steps: the deposition sequence is Ti, al, tiN and ITO, the Power is 1000 W+/-100W, the reaction pressure is 1+/-0.15 Pa, the flow of argon is 30-50sccm, the flow of oxygen is 10-20sccm, the flow of nitrogen is 10-15sccm, the shape of the photoresist is not affected in the process, and the temperature of the process is controlled at 80-100 ℃;
in the step S3, the rotating speed of spin coating is controlled between 1000 rpm and 1500rpm, so that the thickness of the first photoresist is controlled within the range of 2-3 micrometers;
in the step S4, the pre-baking temperature is between 90 and 150 ℃, the pre-baking time is between 90 and 120 seconds, the exposure energy is between 150 and 350mj, the developing solution adopts 0.03 to 0.04 percent KOH or 2 to 3 percent TMAH, the developing time is between 100 and 150 seconds, the baking temperature is controlled between 90 and 150 ℃, and the time is between 10 and 15 minutes;
in the step S5, the etching power is 350 W+/-20W, the bias power is 30 W+/-5W, the etching gas is CF4, the flow is 100-150sccm under the pressure of 1+/-0.15 Pa, the reaction temperature is controlled at 80 ℃ +/-1 ℃, the time is 5-10S, the using power is 1000 W+/-100W in the dry etching ashing photoresist removing process, the bias power is 30 W+/-5W, the temperature is controlled at 23 ℃, the pressure is 1+/-0.15 Pa, the flow of the introduced oxygen is 50-150sccm, and the ashing time is 80-120S.
2. The method of manufacturing an anode structure according to claim 1, wherein in the ashing photoresist removing process in step S8, the power is 1000w±100W, the bias power is 30w±5W, the control temperature is 23 ℃, the pressure is 1±0.15Pa, the flow rate of the introduced oxygen is 50-150sccm, and the ashing time is 80-120S; in the wet cleaning process, NMP is selected to remove glue solution at 60+/-1 ℃, and soaking time is controlled at 15min in a soaking manner.
3. A display comprising an anode structure prepared by the method of manufacturing an anode structure of claim 1.
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