CN111063828A - Silicon-based Micro OLED Micro-display anode and preparation method thereof - Google Patents
Silicon-based Micro OLED Micro-display anode and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 16
- 238000001312 dry etching Methods 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000004380 ashing Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 18
- 238000001035 drying Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Abstract
The invention discloses a silicon-based Micro OLED Micro-display anode and a preparation method thereof, which are prepared by adopting the process of cleaning → coating → exposure → development → metal film deposition → dry etching ashing photoresist → STR stripping and photoresist removal.
Description
Technical Field
The invention belongs to the field of silicon-based Micro OLED Micro display, and particularly relates to a silicon-based Micro OLED Micro display anode and a preparation method thereof.
Background
With the expanding demand of the current market for the diversity and high performance of display devices, the development of display technology is greatly promoted. Among them, the OLED (organic light-Emitting Diode) device is more and more popular because it is self-luminous, does not need backlight, is thinner, and has a series of advantages such as high brightness, high contrast, wide viewing angle, low driving voltage, and low power consumption. So that more and more companies are currently investing in the research of OLED technology.
In the current OLED market, AR/VR and military helmet display, gun aiming and other requirements are increasing, and the corresponding silicon-based Micro OLED Micro-display technology is also developing rapidly. Different from the conventional AMOLED device which uses amorphous silicon, microcrystalline silicon or low-temperature polycrystalline silicon thin film transistors as a backboard, the silicon-based OLED micro-display device takes a monocrystalline silicon chip as a substrate, the pixel size is 1/10 of the traditional display device, and the fineness is far higher than that of the traditional device. The monocrystalline silicon chip adopts the existing mature CMOS (complementary metal oxide semiconductor) process of an integrated circuit, not only realizes an active addressing matrix of pixels of a display screen, but also realizes a drive control circuit with multiple functions such as an SRAM (static random access memory), a T-CON (time-to-constant) and the like on the silicon chip, thereby greatly reducing external connecting wires of devices, increasing the reliability and realizing the light weight. The silicon-based micro-fabrication process achieves these advantages based on the complicated process, so it is very desirable to simplify the process flow.
At present, the anode of the silicon-based micro display device is of a metal structure, in order to achieve the required progress, the conventional process is PVD film forming → coating → exposure → development → dry etching → STR photoresist removal, the process is complicated, the anode is a metal film layer, the anode is short-circuited due to metal pollution generated in the etching process because the anode is partially prepared by metal etching, the yield loss is up to 40%, and the reflectivity of the upper film layer of the anode can be reduced to 85% due to over-etching of metal by a dry method. The yield is lost, and the inverted trapezoidal photoresist is difficult to remove, so that the anode has a short circuit condition, and the anode cannot be practically applied to production.
Disclosure of Invention
In order to solve the technical problems, the invention provides a silicon-based Micro OLED Micro-display anode and a preparation method thereof, which are prepared by adopting the process of cleaning → coating → exposure → developing → metal film deposition → dry etching ashing photoresist → STR stripping and photoresist removing.
The technical scheme adopted by the invention is as follows:
a preparation method of a silicon-based Micro OLED Micro-display anode comprises the following steps:
(1) cleaning the silicon substrate which is provided with the drive CMOS circuit and has finished the PAD (PAD) and the cathode ring;
(2) coating photoresist on a silicon-based substrate;
(3) exposing the silicon wafer coated with the photoresist;
(4) developing the silicon wafer exposed by the photoresist
(5) Depositing an anode layer metal film on the developed silicon wafer to form Ti/TiN/Al/Ti/TiN/ITO film in sequence;
(6) dry etching the ashed photoresist;
(7) STR stripping and degumming.
Further, in the step (2), a negative photoresist is selected for coating, the rotating speed of the coating is controlled to be 4000 +/-500/rpm, the pre-drying temperature is controlled to be 90-110 ℃, the pre-drying time is controlled to be 90 +/-10 s, and the film thickness is controlled to be
The step (3) also comprises post-baking the exposed photoresist, wherein the post-baking temperature is controlled to be 105-115 ℃, and the post-baking time is controlled to be 100 +/-10 s; the exposure intensity is 180 + -10 mj.
In the step (4), the developing solution adopts: 2.38% of TMAH, the developing temperature is stably controlled at 23 ℃, and the developing time is controlled at 70 +/-10 s.
In the step (4), after development, the angle of the photoresist is controlled to be 60 +/-10 degrees and is in an inverted trapezoid shape, when the photoresist in the shape is deposited on a metal film, the metal film on the top of the photoresist can be separated from the metal film without the photoresist, and when the angle is controlled to be 60 +/-10 degrees, the photoresist removing liquid is easy to contact with the photoresist part during subsequent STR stripping and photoresist removing, and the photoresist is easy to remove. If the angle is higher than the range, the metal film is short-circuited, and if the angle is lower than the range, the photoresist is easy to collapse.
In the step (5), vapor plating of Ti, TiN, Al, Ti, TiN and ITO is sequentially carried out through vapor plating equipment to form a Ti/TiN/Al/Ti/TiN/ITO anode metal layer, the temperature of the substrate is controlled to be 60-100 ℃ during vapor plating, and the phenomenon of glue collapse is avoided.
In the step (6), after the dry etching, dry plasma bombardment is carried out for 10s, so that an oxide layer generated on the surface layer of the metal film of the anode layer during dry etching ashing photoresist is removed.
The dry etching process conditions are as follows: the power supply power is 800W-1200W, the bias power is 20W-70W, the pressure is 30 mT-80 mT, the temperature is 15 ℃ -25 ℃, the time is 60 s-90 s, and the oxygen flow is 80 sccm-120 sccm, so that the ashing of the inverted trapezoidal photoresist is realized.
The technological conditions of the dry plasma bombardment are as follows: argon flow is 10 sccm-15 sccm, pressure is 10 mT-25 mT, power supply power is 100W-200W, and bias power is 10W-20W; when the ashing photoresist is etched by the dry method, oxygen is adopted, so that an oxide layer can be generated on the surface layer of the metal film of the anode layer while the ashing photoresist is ashed, the oxide layer on the surface layer of the metal film of the anode layer can be removed by the dry plasma bombardment process, the condition that the metal has an oxide film layer is avoided, the low-damage treatment during the removal of the oxide layer can be ensured by the process conditions, and the integrity of the metal film of the anode layer is ensured.
The invention also provides the silicon-based Micro OLED Micro-display anode prepared by the preparation method.
Compared with the prior art, the preparation method of the silicon-based Micro OLED Micro-display anode provided by the invention adopts the process of cleaning → coating → exposure → development → metal film deposition → dry etching ashing photoresist → STR stripping and photoresist removal, and obtains the photoresist with inverted trapezoid shape and moderate photoresist thickness by setting the process parameters in the coating, exposure and development procedures in a matching way; the metal film of the anode layer is deposited in an evaporation mode, so that a dry etching process of metal is avoided, the cost is saved, the productivity is improved, and metal pollution generated in the etching process is avoided, so that the yield is improved; after the anode layer metal film is deposited, a pre-degumming step of dry etching ashing photoresist is adopted, the photoresist can be completely removed after the STR stripping and photoresist removing step, and the problems of poor electrical property and the like caused by residual photoresist are avoided.
Drawings
FIG. 1 is a schematic diagram of an anode structure of a silicon-based Micro OLED Micro-display.
FIG. 2 is a process diagram for manufacturing an anode of a silicon-based Micro OLED microdisplay.
Detailed Description
The present invention will be described in detail with reference to examples.
Example 1
A preparation method of a silicon-based Micro OLED Micro-display anode comprises the following steps:
(1) cleaning the silicon-based substrate which is provided with the PAD and the cathode ring and is provided with the drive CMOS circuit;
(2) coating a negative photoresist on a silicon-based substrate, wherein the coating rotation speed is controlled to be 4000 +/-500/rpm, the pre-drying temperature is controlled to be 90-110 ℃, the pre-drying time is controlled to be 90 +/-10 s, and the film thickness is controlled to be
(3) Exposing the silicon wafer coated with the photoresist with the exposure intensity of 180 +/-10 mj; post-baking the exposed photoresist, wherein the post-baking temperature is controlled to be 105-115 ℃, and the post-baking time is controlled to be 100 +/-10 s;
(4) developing the silicon wafer subjected to photoresist exposure, wherein the developing solution adopts the following steps: 2.38 percent of TMAH, the developing temperature is stably controlled at 23 ℃, and the developing time is controlled at 70 +/-10 s;
(5) sequentially carrying out evaporation coating on Ti, TiN, Al, Ti, TiN and ITO by using evaporation coating equipment to form a Ti/TiN/Al/Ti/TiN/ITO anode metal layer, wherein the temperature of the substrate is controlled to be 60-100 ℃ during the evaporation coating;
(6) after finishing the evaporation of the anode metal layer, carrying out dry etching and photoresist removal treatment, wherein the dry etching process conditions are as follows: the power supply power is 800W-1200W, the bias power is 20W-70W, the pressure is 30 mT-80 mT, the temperature is 15 ℃ -25 ℃, the time is 60 s-90 s, and the oxygen flow is 80 sccm-120 sccm; after oxygen is introduced to ash the photoresist, in order to avoid metal oxidation, dry plasma bombardment is required for 10s, and the process conditions of the dry plasma bombardment are as follows: argon flow of 10 sccm-15 sccm, pressure of 10 mT-25 mT, power supply of 100W-200W, bias power of 10W-20W
(7) And (5) STR stripping and photoresist removing, and removing the photoresist and the metal on the photoresist to finish the preparation of the silicon-based Micro OLED Micro-display anode. The yield loss of the silicon-based Micro OLED Micro-display anode prepared by the process is reduced to 22%, and the reflectivity of an anode film layer is improved by 6% compared with that of the conventional process.
The steps of the preparation process are shown in fig. 2, and the structure of the prepared anode of the silicon-based Micro OLED Micro-display is shown in fig. 1.
Comparative example 1
Otherwise, the same as example 1, except that step (6) is omitted and STR stripping and stripping are directly performed after step (5). The photoresist of the silicon-based Micro OLED Micro-display anode prepared by the process is remained, so that the anode part is short-circuited, and the yield of the anode part is lost to 31%.
The above detailed description of a silicon-based Micro OLED microdisplay anode and method of making same with reference to the embodiments is illustrative and not restrictive, and several embodiments can be enumerated in accordance with the limitations, and thus, variations and modifications thereof without departing from the general inventive concept are intended to be within the scope of the present invention.
Claims (10)
1. A preparation method of a silicon-based Micro OLED Micro-display anode is characterized by comprising the following steps:
(1) cleaning the silicon-based substrate which is provided with the PAD and the cathode ring and is provided with the drive CMOS circuit;
(2) coating photoresist on a silicon-based substrate;
(3) exposing the silicon wafer coated with the photoresist;
(4) developing the silicon wafer exposed by the photoresist
(5) Depositing an anode layer metal film on the developed silicon wafer to form Ti/TiN/Al/Ti/TiN/ITO film in sequence;
(6) dry etching the ashed photoresist;
(7) STR stripping and degumming.
2. The method according to claim 1, wherein in the step (2), the negative photoresist is selected for coating, the coating rotation speed is controlled to 4000 ± 500/rpm, the pre-baking temperature is controlled to 90-110 ℃, the pre-baking time is controlled to 90 ± 10s, and the film thickness is controlled to 90 ± 10s
3. The preparation method according to claim 1, wherein the step (3) further comprises post-baking the exposed photoresist, wherein the post-baking temperature is controlled to be 105-115 ℃, and the post-baking time is controlled to be 100 +/-10 s; the exposure intensity is 180 + -10 mj.
4. The production method according to claim 1, wherein in the step (4), the developing solution employs: 2.38% of TMAH, the developing temperature is stably controlled at 23 ℃, and the developing time is controlled at 70 +/-10 s.
5. The production method according to claim 1 or 4, wherein in the step (4), after the development, the photoresist angle is controlled to be 60 ± 10 ° and to be in an inverted trapezoid shape.
6. The method according to claim 1, wherein in the step (5), the Ti/TiN, Al, Ti, TiN, ITO are sequentially evaporated by an evaporation apparatus to form the Ti/TiN/Al/Ti/TiN/ITO anode metal layer, and the substrate temperature is controlled to be 60 ℃ to 100 ℃ during evaporation.
7. The method according to claim 1, wherein the step (6) further comprises performing dry plasma bombardment for 10s after the dry etching.
8. The manufacturing method according to claim 1 or 7, wherein the dry etching process conditions are as follows: the power supply power is 800W-1200W, the bias power is 20W-70W, the pressure is 30 mT-80 mT, the temperature is 15 ℃ -25 ℃, the time is 60 s-90 s, and the oxygen flow is 80 sccm-120 sccm.
9. The preparation method according to claim 1 or 7, characterized in that the process conditions of the dry plasma bombardment are: argon flow of 10 sccm-15 sccm, pressure of 10 mT-25 mT, power of 100W-200W, and bias power of 10W-20W.
10. A silicon-based Micro OLED Micro-display anode prepared by the method of any one of claims 1-9.
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|---|---|---|---|---|
| CN112259704A (en) * | 2020-10-21 | 2021-01-22 | 安徽熙泰智能科技有限公司 | Process method for preventing cathode on substrate from cracking |
| CN112259703A (en) * | 2020-10-21 | 2021-01-22 | 安徽熙泰智能科技有限公司 | Preparation method of silicon-based OLED micro-display |
| CN112436040A (en) * | 2020-11-23 | 2021-03-02 | 安徽熙泰智能科技有限公司 | Simplified preparation method of anode of silicon-based Micro OLED Micro-display device and pixel definition layer |
| CN113054142A (en) * | 2021-04-02 | 2021-06-29 | 深圳市芯视佳半导体科技有限公司 | Silicon-based OLED micro-display anode and preparation method and application thereof |
| CN113290316A (en) * | 2021-05-20 | 2021-08-24 | 安徽熙泰智能科技有限公司 | Process for removing film layer of silicon-based OLED micro-display device |
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109614A (en) * | 1991-10-14 | 1993-04-30 | Fuji Electric Co Ltd | Removal method of photoresist film |
| JPH08293490A (en) * | 1995-04-25 | 1996-11-05 | Sumitomo Metal Ind Ltd | Method of forming via hole of semiconductor device |
| US6492272B1 (en) * | 2001-02-15 | 2002-12-10 | Advanced Micro Devices, Inc. | Carrier gas modification for use in plasma ashing of photoresist |
| CN101207067A (en) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing inlaid structure |
| CN101697369A (en) * | 2009-10-29 | 2010-04-21 | 彩虹集团公司 | Method for preparing isolation column of silicon-based organic light-emitting micro-display device |
| CN102082089A (en) * | 2009-11-27 | 2011-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for removing photoresist |
| CN102436154A (en) * | 2011-12-21 | 2012-05-02 | 信利半导体有限公司 | Photoresist stripping method in repairing process of TFT (thin film transistor) liquid crystal display |
| CN103107066A (en) * | 2011-11-10 | 2013-05-15 | 无锡华润上华科技有限公司 | Photoresist removal method and semiconductor production method |
| CN104635994A (en) * | 2015-03-17 | 2015-05-20 | 蚌埠玻璃工业设计研究院 | Method for manufacturing touch screen metal pattern |
| CN105824202A (en) * | 2016-05-11 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | Photoresist removal method and semiconductor device manufacturing method |
| US20160336388A1 (en) * | 2015-05-15 | 2016-11-17 | Renesas Electronics Corporation | METHOD FOR FORMING Ti/TiN STACKED FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| CN107331786A (en) * | 2017-06-23 | 2017-11-07 | 安徽熙泰智能科技有限公司 | The manufacture method of OLED micro-display devices anode construction and the anode construction |
| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| US20180294344A1 (en) * | 2017-04-11 | 2018-10-11 | Boe Technology Group Co., Ltd. | Method for manufacturing low-temperature poly-silicon thin film transistor, low-temperature poly-silicon thin film transistor and display device |
| CN109338365A (en) * | 2018-09-19 | 2019-02-15 | 云谷（固安）科技有限公司 | Light-emitting display device and its lithographic method and display device |
-
2019
- 2019-12-31 CN CN201911416082.7A patent/CN111063828A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109614A (en) * | 1991-10-14 | 1993-04-30 | Fuji Electric Co Ltd | Removal method of photoresist film |
| JPH08293490A (en) * | 1995-04-25 | 1996-11-05 | Sumitomo Metal Ind Ltd | Method of forming via hole of semiconductor device |
| US6492272B1 (en) * | 2001-02-15 | 2002-12-10 | Advanced Micro Devices, Inc. | Carrier gas modification for use in plasma ashing of photoresist |
| CN101207067A (en) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing inlaid structure |
| CN101697369A (en) * | 2009-10-29 | 2010-04-21 | 彩虹集团公司 | Method for preparing isolation column of silicon-based organic light-emitting micro-display device |
| CN102082089A (en) * | 2009-11-27 | 2011-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for removing photoresist |
| CN103107066A (en) * | 2011-11-10 | 2013-05-15 | 无锡华润上华科技有限公司 | Photoresist removal method and semiconductor production method |
| CN102436154A (en) * | 2011-12-21 | 2012-05-02 | 信利半导体有限公司 | Photoresist stripping method in repairing process of TFT (thin film transistor) liquid crystal display |
| CN104635994A (en) * | 2015-03-17 | 2015-05-20 | 蚌埠玻璃工业设计研究院 | Method for manufacturing touch screen metal pattern |
| US20160336388A1 (en) * | 2015-05-15 | 2016-11-17 | Renesas Electronics Corporation | METHOD FOR FORMING Ti/TiN STACKED FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| CN105824202A (en) * | 2016-05-11 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | Photoresist removal method and semiconductor device manufacturing method |
| US20180294344A1 (en) * | 2017-04-11 | 2018-10-11 | Boe Technology Group Co., Ltd. | Method for manufacturing low-temperature poly-silicon thin film transistor, low-temperature poly-silicon thin film transistor and display device |
| CN107331786A (en) * | 2017-06-23 | 2017-11-07 | 安徽熙泰智能科技有限公司 | The manufacture method of OLED micro-display devices anode construction and the anode construction |
| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| CN109338365A (en) * | 2018-09-19 | 2019-02-15 | 云谷（固安）科技有限公司 | Light-emitting display device and its lithographic method and display device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259704A (en) * | 2020-10-21 | 2021-01-22 | 安徽熙泰智能科技有限公司 | Process method for preventing cathode on substrate from cracking |
| CN112259703A (en) * | 2020-10-21 | 2021-01-22 | 安徽熙泰智能科技有限公司 | Preparation method of silicon-based OLED micro-display |
| CN112259703B (en) * | 2020-10-21 | 2023-12-01 | 安徽熙泰智能科技有限公司 | Preparation method of silicon-based OLED micro-display |
| CN112436040A (en) * | 2020-11-23 | 2021-03-02 | 安徽熙泰智能科技有限公司 | Simplified preparation method of anode of silicon-based Micro OLED Micro-display device and pixel definition layer |
| CN113054142A (en) * | 2021-04-02 | 2021-06-29 | 深圳市芯视佳半导体科技有限公司 | Silicon-based OLED micro-display anode and preparation method and application thereof |
| CN113290316A (en) * | 2021-05-20 | 2021-08-24 | 安徽熙泰智能科技有限公司 | Process for removing film layer of silicon-based OLED micro-display device |
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| CN114300636A (en) * | 2021-12-27 | 2022-04-08 | 湖畔光电科技（江苏）有限公司 | Anode structure, anode structure manufacturing method and display |
| CN114300636B (en) * | 2021-12-27 | 2023-11-10 | 湖畔光电科技（江苏）有限公司 | Anode structure, anode structure manufacturing method and display |
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