CN114300636A - Anode structure, anode structure manufacturing method and display - Google Patents
Anode structure, anode structure manufacturing method and display Download PDFInfo
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- CN114300636A CN114300636A CN202111614420.5A CN202111614420A CN114300636A CN 114300636 A CN114300636 A CN 114300636A CN 202111614420 A CN202111614420 A CN 202111614420A CN 114300636 A CN114300636 A CN 114300636A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 64
- 238000004380 ashing Methods 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000002791 soaking Methods 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 9
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
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- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
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Abstract
The invention relates to an anode structure, a manufacturing method of the anode structure and a display, wherein the anode structure comprises: the structure comprises a substrate and N structural units, wherein the N structural units are arranged on the substrate at equal intervals; each structural unit includes: the structure rete sets up on the substrate, mixes rete clad structure rete and sets up on the substrate. The invention can be used for manufacturing the arc-shaped mixed film layer with the coating structure, thereby not only improving the reflectivity and the brightness of the anode structure, but also improving the luminous efficiency of the product and enlarging the visual angle of the product.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectricity, in particular to an anode structure, a manufacturing method of the anode structure and a display.
Background
In the preparation process of Organic Light Emitting Diodes (OLEDs), the anode material needs to have high reflectivity, high work function and excellent conductivity, such as common materials like Ti, Al, ITO, etc. The reflectivity of the anode is one of the important parameters affecting the brightness and the light emitting efficiency of the top emission device, and is generally improved by changing the material or structure of the anode. The reflectivity of the anode is about 90% generally at present, substantial and large improvement is difficult to achieve, Ag is a good material for improving the reflectivity, but due to the fact that Ag is easy to generate metal pollution in dry etching and wet etching and the line width control capability is poor, ideal mass production conditions cannot be achieved. How to achieve high brightness and high luminous efficiency is a continuous pursuit goal of OLED device products.
Disclosure of Invention
The invention aims to provide an anode structure, an anode structure manufacturing method and a display, so as to improve the reflectivity and the brightness of the anode structure.
To achieve the above object, the present invention provides an anode structure comprising:
the structure comprises a substrate and N structural units, wherein the N structural units are arranged on the substrate at equal intervals, and N is a positive integer greater than or equal to 1;
each of the structural units includes: the structure film layer is arranged on the substrate, and the mixed film layer covers the structure film layer and is arranged on the substrate.
Optionally, the structural film layer is a silicon nitride film layer, a silicon oxide film layer, an aluminum film layer or an aluminum oxide film layer.
Optionally, the mixed membrane layer is comprised of anodic metal and oxide deposits.
The invention also provides a manufacturing method of the anode structure, which is used for preparing the anode structure and comprises the following steps:
step S1: cleaning the substrate and heating and baking the substrate under a vacuum condition;
step S2: depositing a structural film layer with a certain thickness on the substrate by adopting a chemical vapor deposition mode or a physical sputtering deposition mode;
step S3: coating photoresist on the structural film layer by adopting a spin coating mode or an ink-jet printing mode to obtain first photoresist;
step S4: carrying out pre-baking, exposure, development and baking on the substrate with the first photoresist;
step S5: etching the baked substrate in an etching mode, and removing the first photoresist by adopting a dry etching ashing photoresist removing process to obtain an anode initial structure;
step S6: coating photoresist between two adjacent structural film layers on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain second photoresist, and carrying out pre-baking, exposure, development and baking on the substrate with the second photoresist to obtain an anode intermediate structure;
step S7: depositing a mixed film layer on the anode intermediate structure to obtain an anode final structure;
step S8: and removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the stripped anode final structure by adopting a wet cleaning process to obtain the anode structure.
Optionally, in step S3, the spin speed is controlled between 1000 and 1500rpm, so that the thickness of the first photoresist is controlled within a range of 2-3 μm.
Optionally, in step S4, the pre-baking temperature is 90-150 ℃, the pre-baking time is 90-120S, the exposure energy is 150-.
Optionally, in the step S5, the power used for etching is 350W ± 20W, the bias power is 30W ± 5W, the etching gas is CF4, the flow rate is 100 + 150sccm under the condition of 1 ± 0.15Pa, the reaction temperature is controlled at 80 ℃ ± 1 ℃ and the time is 5-10S, the power used for dry etching ashing and photoresist removing process is 1000W ± 100W, the bias power is 30W ± 5W, the temperature is controlled at 23 ℃, the pressure is 1 ± 0.15Pa, the flow rate of the introduced oxygen is 50-150sccm, and the ashing time is 80-120S.
Optionally, in step S7, the deposition sequence is Ti, Al, TiN and ITO, the power is 1000W ± 100W, the reaction pressure is 1 ± 0.15Pa, the flow of argon is introduced at 30-50sccm, the flow of oxygen is 10-20sccm, the flow of nitrogen is 10-15sccm, and the temperature is controlled at 80-100 ℃.
Optionally, in the ashing and photoresist removing process in step S8, the power used is 1000W ± 100W, the bias power is 30W ± 5W, the temperature is controlled at 23 ℃, the pressure is 1 ± 0.15Pa, the flow of the introduced oxygen is 50-150sccm, and the ashing time is 80-120S; in the wet cleaning process, NMP is selected to remove the glue solution at the temperature of 60 +/-1 ℃, a soaking and washing mode is adopted, and the soaking time is controlled to be 15 min.
The invention also provides a display, which comprises the anode structure.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention relates to an anode structure, a manufacturing method of the anode structure and a display, wherein the anode structure comprises: the structure comprises a substrate and N structural units, wherein the N structural units are arranged on the substrate at equal intervals; each structural unit includes: the structure rete sets up on the substrate, mixes rete clad structure rete and sets up on the substrate. The invention can be used for manufacturing the arc-shaped mixed film layer with the coating structure, thereby not only improving the reflectivity and the brightness of the anode structure, but also improving the luminous efficiency of the product and enlarging the visual angle of the product.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic view of an anode structure according to the present invention;
FIG. 2 is a flow chart of a method of fabricating an anode structure according to the present invention;
FIG. 3 is a schematic view of a method for fabricating an anode structure according to the present invention;
description of the symbols:
1-substrate, 2-structural film layer, 3-first photoresist, 4-second photoresist and 5-mixed film layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide an anode structure, an anode structure manufacturing method and a display, so as to improve the reflectivity and the brightness of the anode structure.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example 1
As shown in fig. 1, the present invention discloses an anode structure, which includes: the structure comprises a substrate 1 and N structural units, wherein the N structural units are arranged on the substrate 1 at equal intervals, and N is a positive integer greater than or equal to 1; each of the structural units includes: structural film layer 2 and curved mixed rete 5, structural film layer 2 sets up on the substrate 1, mixed rete 5 cladding structural film layer 2 just sets up on the substrate 1.
As an optional implementation manner, the structural film layer 2 of the present invention is a silicon nitride film layer, a silicon oxide film layer, an aluminum film layer, or an aluminum oxide film layer. The mixed film layer 5 is composed of anode metal and oxide deposition.
Example 2
As shown in fig. 2, the invention discloses a method for manufacturing an anode structure, which comprises the following steps:
step S1: cleaning the substrate 1 with the CMOS driving array circuit arrangement completed and heating and baking under a vacuum condition; the substrate 1 after the heat baking is shown in fig. 3 (a). Specifically, a two-fluid mode of water and gas is adopted to remove particles on the surface of the substrate 1, so that poor spots are prevented from being caused; heating and baking the substrate 1 under a vacuum condition after cleaning, and removing a water vapor layer adsorbed on the surface; specifically, the heating temperature is 150-200 ℃, the baking time is controlled to be 15-30min, and the cooling time is 30min +/-5 min.
Step S2: depositing a structural film layer 2 with a certain thickness on the substrate 1 by adopting a chemical vapor deposition mode or a physical sputtering deposition mode; the substrate 1 on which the structural film layer 2 is deposited is shown in fig. 3 (B). Further, silane and ammonia gas are led into the reaction chamber according to a certain amount to be deposited by adopting a plasma enhanced chemical vapor deposition mode, so as to obtain the structural film layer 2. Specifically, the flow rate of silane is controlled to be 100-120sccm, the flow rate of ammonia gas is controlled to be 50-70sccm, the deposited structure film layer 2 can be silicon nitride, silicon oxide, aluminum oxide, etc., and the thickness is controlled to be
。
Step S3: coating photoresist on the structural film layer 2 by adopting a spin coating mode or an ink-jet printing mode to obtain a first photoresist 3; specifically, the spin coating speed is controlled between 1000-.
Step S4: the substrate 1 with the first photoresist 3 is subjected to pre-baking, exposure, development, and baking, as shown in (C) of fig. 3. Specifically, the pre-baking temperature is between 90 and 150 ℃, the pre-baking time is between 90 and 120 seconds, the exposure energy is 150-.
Step S5: etching the baked substrate 1 by an etching method, and removing the first photoresist 3 by a dry etching ashing photoresist removal process to obtain an anode initial structure as shown in (E) of fig. 3, wherein the specific process is shown in (D) of fig. 3. Specifically, the condition for etching the redundant structural film layer 2 is different according to the difference of the structural film layer 2, taking silicon nitride as an example, the power for etching is 350W +/-20W, the Bias power is 30W +/-5W, the etching gas is CF4, the flow rate is 100 plus or minus 150sccm under the condition that the pressure is 1 +/-0.15 Pa, the reaction temperature is controlled at 80 +/-1 ℃, and the etching can be completed by selecting 5-10 s. When the dry etching ashing photoresist removing process is adopted, the Power is 1000W +/-100W, the bias Power is 30W +/-5W, the temperature is controlled to be 23 ℃, the pressure is 1 +/-0.15 Pa, the flow of the introduced oxygen is 50-150sccm, and the ashing time is 80-120 s.
Through the process steps, the bottom layer structurization of the anode can be realized, and the 2X direction of the etched structure film layer is 1.5 micrometers, the Y direction is 4.5 micrometers, and the thickness is
The specific structure of (1).
Step S6: and coating photoresist between two adjacent structural film layers 2 on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain second photoresist 4, and pre-baking, exposing, developing and baking the substrate 1 with the second photoresist 4 to obtain an anode intermediate structure diagram shown in (F) in fig. 3. Step S6 is based on different exposure areas, and the steps S3-S4 are repeated, including gluing, pre-baking, exposure, development and final baking, wherein the process parameter conditions are consistent, and only the exposed area is different from the exposure area of step S4. The second photoresist 4 may be rectangular, trapezoidal, etc., and the second photoresist 4 is provided in order to avoid directly connecting two adjacent structural units.
Step S7: the deposition of the anodic metal and oxide layer on the anodic intermediate structure inside the vacuum chamber results in an anodic final structure as shown in figure 3 (G). Specifically, the deposition sequence is Ti, Al, TiN and ITO, the Power Power is 1000W +/-100W, the reaction pressure is 1 +/-0.15 Pa, argon gas flow is introduced according to different film layers and is 30-50sccm, oxygen flow is 10-20sccm, nitrogen flow is 10-15sccm, in order to keep the shape of the photoresist unaffected in the process, the temperature in the process is controlled to be 80-100 ℃.
Step S8: the second photoresist 4 on the anode final structure and the mixed film layer 5 on the second photoresist 4 are removed by a dry etching ashing photoresist removal process, and the anode final structure after photoresist removal is cleaned by a wet cleaning process, so that an anode structure is obtained as shown in (H) in fig. 3. Specifically, the ashing photoresist removing process uses Power of 1000W +/-100W, bias Power of 30W +/-5W, temperature of 23 ℃, pressure of 1 +/-0.15 Pa, flow of introduced oxygen of 50-150sccm and ashing time of 80-120s, and photoresist can be removed; in order to prevent the residues of the photoresist and other foreign matters, the invention adopts a wet cleaning process to completely clean, selects NMP to remove the glue solution at the temperature of 60 +/-1 ℃, adopts a leaching or soaking mode, can control the soaking time to be 15-30min if the spraying time is controlled to be 100 +/-20 s, and finally finishes cleaning and uses pure water for rinsing for multiple times.
Example 3
Step S1: and cleaning and baking the substrate with the CMOS drive array circuit arrangement completed to remove pollutants on the surface. Specifically, two-fluid method of water and gas is adopted to remove particles on the surface, and the cleaned surface is vacuumized by more than 1 to 10-4Heating to 180 ℃ under the Pa condition, selecting 25min for baking to completely remove water vapor, removing a water vapor layer on the surface, and transferring to a cooling chamber for cooling for 30min after baking.
Step S2: and introducing silane and ammonia gas into the reaction chamber according to a certain amount by adopting a plasma enhanced chemical vapor deposition mode, and depositing the required structural film layer. Specifically, the deposited structural film layer is a silicon nitride film layer, the flow rate of silane is controlled to be 110sccm, the flow rate of ammonia gas is controlled to be 55sccm, and the target thickness is
In order to ensure the consistency of the radian of the final anode, the thickness non-uniformity of the silicon nitride is within +/-3 percent.
Step S3: coating photoresist on the structural film layer in a spin coating mode to obtain first photoresist; specifically, the commonly used negative photoresist is adopted at this time, and the thickness of the photoresist is 2.6 microns by controlling the rotating speed between 1200 +/-20 rpm.
Step S4: carrying out pre-baking, exposure, development and baking on the substrate with the first photoresist; specifically, the pre-baking temperature is set to 100 ℃, the pre-baking time is 90s, the exposure energy is 220mj, the developing solution adopts an alkaline solution containing 0.03-0.04% of KOH, the developing time is 140s, the baking temperature is 120 ℃, and the baking time is 12 min.
Step S5: etching the silicon nitride film layer by using a dry etching mode, and removing the first photoresist by using an ashing photoresist removing process after dry etching to obtain an anode initial structure; specifically, the power of the etching is 350W +/-20W, the Bias power is 30W +/-5W, and the etching gas is CF4The flow is 110sccm, the pressure is 1 +/-0.15 Pa, the temperature is controlled at 80 +/-1 ℃, and the etching can be carried out for 8s
The silicon nitride film layer. And continuously using Power of 1000W +/-100W, bias Power of 30W +/-5W, controlling the temperature to be 23 ℃, the pressure to be 1 +/-0.15 Pa, introducing oxygen into the solution at a flow rate of 130sccm, and ashing for 110s to finish the photoresist film layer on the surface layer.
By this step, the fabrication of the anode substructure is completed, the substructure of silicon nitride is obtained by this embodiment, the structural film is distributed in an array, the X-direction is 1.5 microns, the Y-direction is 4.5 microns, and the thickness is 1
The structure of (1).
Step S6: coating photoresist between two adjacent structural film layers on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain second photoresist, and carrying out pre-baking, exposure, development and baking on the substrate with the second photoresist to obtain an anode intermediate structure; the process comprises the steps of repeating the step S3 and the step S4, wherein the steps comprise gluing, pre-baking, exposure, development and final baking, the process parameter conditions are consistent, and the types and the numbers of the selected photoresist are consistent. The exposure area in this step is the area except the silicon nitride structure, specifically, all areas between two silicon nitride structures, the prepared photoresist pattern is an inverted trapezoid, the height is 2.8 μm, the photoresist thickness is thicker here, so as to fully expose the lower part of the trapezoid photoresist, and the basis is to facilitate the following eighth step photoresist stripping process.
Step S7: putting the substrate (namely the anode intermediate structure) with the silicon nitride and the inverted trapezoidal second photoresist structure into a vacuum chamber to deposit an anode metal and an oxide layer so as to obtain an anode final structure; specifically, the deposition sequence is Ti, Al, TiN and ITO, the Power Power is 1000W +/-100W, the reaction pressure is 1 +/-0.15 Pa, the process gas is introduced into the film layer according to different flow rates of 30-50sccm, the oxygen flow is 15sccm, the nitrogen flow is 14sccm, and the temperature of the process film forming process is set at 100 ℃ in order to keep the shape of the photoresist unaffected in the process.
Step S8: removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the stripped anode final structure by adopting a wet cleaning process to obtain an anode structure; specifically, in the dry etching ashing photoresist removing process, the Power is 1000W +/-100W, the bias Power is 30W +/-5W, the temperature is controlled to be 23 ℃, the pressure is 1 +/-0.15 Pa, the flow of introduced oxygen is 130sccm, and the ashing time is 120s, so that the photoresist can be removed; in order to prevent the photoresist and other foreign matters from remaining, a wet cleaning process is adopted for thorough cleaning, NMP is selected to remove the glue solution at the temperature of 60 +/-1 ℃, a soaking mode is adopted, the soaking time can be controlled within 15min, and finally, the cleaning is finished and the rinsing is carried out by using pure water for multiple times.
Example 4
Step S1: and cleaning and baking the substrate with the CMOS drive array circuit arrangement completed to remove pollutants on the surface. Specifically, the cleaning mode adopts a two-fluid mode of water and gas to remove particles on the surface, and the vacuum is more than 1 to 10 after cleaning-4Heating to 180 ℃ under the Pa condition, selecting 25min for baking to completely remove water vapor, removing a water vapor layer on the surface, and transferring to a cooling chamber for cooling for 30min after baking.
Step S2: and obtaining the structural film layer by adopting a physical sputtering deposition mode. Specifically, the deposited structural film layer is an aluminum film layer, the Power Power is 1000W +/-100W, the reaction pressure is 1 +/-0.15 Pa, the flow of introduced argon is 30-50sccm, and the target thickness is
In order to ensure the consistency of the radian of the final anode, the thickness non-uniformity of the aluminum is within +/-3 percent.
Step S3: coating photoresist on the structural film layer in an ink-jet printing mode to obtain first photoresist; specifically, the common negative photoresist is adopted at this time, and the thickness of the photoresist is 2.6 microns by controlling the printing speed to be 200 mm/s.
Step S4: carrying out pre-baking, exposure, development and baking on the substrate with the first photoresist; specifically, the pre-baking temperature is set to be 100 ℃, the pre-baking time is 90s, the exposure energy is 220mj, the pre-baking temperature is set to be 100 ℃, the pre-baking time is 90s, the developing solution adopts 0.03-0.04% KOH alkaline solution, the developing time is 140s, the baking temperature is 120 ℃, and the time is 12 min;
step S5: etching the aluminum structure film layer by using a dry etching mode, and removing the first photoresist by using an ashing photoresist removing process after dry etching to obtain an anode initial structure; specifically, the etching power is 350W +/-20W, the Bias power is 30W +/-5W, the etching gas is chlorine gas, the flow rate is 30sccm, the pressure is 1 +/-0.15 Pa, the temperature is controlled at 80 +/-1 ℃, and the time is 5s, so that the etching can be carried out for removing the chlorine gas
The aluminum metal film layer. And continuously using Power of 1000W +/-100W, bias Power of 30W +/-5W, controlling the temperature to be 23 ℃ and the pressure to be 1 +/-0.15 Pa, introducing oxygen gas with the flow rate of 130sccm, and ashing for 110s to remove the photoresist film layer on the surface layer, wherein after ashing is finished, in order to prevent the aluminum surface from being oxidized, the argon gas (10sccm) is continuously used for bombardment treatment for 5s under low Power (direct current of 120W and bias Power of 10W-20W) to remove the surface oxide layer.
By this step, fabrication of the anode substructure was completed, which resulted in an aluminum metal substructure having an array of 1.5 microns in the X-direction and 4.5 microns in the Y-direction and a thickness of
The structure of (1).
Step S6: coating photoresist between two adjacent structural film layers on the anode initial structure by adopting an ink-jet printing mode based on different exposure areas to obtain second photoresist, and carrying out pre-baking, exposure, development and baking on the substrate with the second photoresist to obtain an anode intermediate structure; the process comprises the steps of repeating the step S3 and the step S4, wherein the steps comprise gluing, pre-baking, exposure, development and final baking, the process parameter conditions are consistent, and the types and the numbers of the selected photoresist are consistent. The exposure area in this step is the area except the metal aluminum structure, specifically, all areas between two metal aluminum structures, the prepared photoresist pattern is an inverted trapezoid, the height is 2.8 μm, the photoresist thickness is thicker here, so as to expose the lower part of the trapezoid photoresist, and the basis is to facilitate the following eighth step photoresist stripping process.
Step S7: putting the substrate (namely the anode intermediate structure) with the metal aluminum and the inverted trapezoidal second photoresist structure into a vacuum reaction chamber to deposit anode metal and an oxide layer to obtain an anode final structure; specifically, the deposition sequence is Ti, Al, TiN and ITO, the Power Power is 1000W +/-100W, the reaction pressure is 1 +/-0.15 Pa, the process gas is introduced into the film layer according to different flow rates of 30-50sccm, the oxygen flow is 15sccm, the nitrogen flow is 14sccm, and the temperature of the process film forming process is set at 100 ℃ in order to keep the shape of the photoresist unaffected in the process.
Step S8: removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the stripped anode final structure by adopting a wet cleaning process to obtain an anode structure; specifically, the dry etching ashing photoresist removal process uses Power of 1000W +/-100W, bias Power of 30W +/-5W, temperature of 23 ℃, pressure of 1 +/-0.15 Pa, flow of introduced oxygen of 130sccm and ashing time of 120s, and photoresist removal can be completed; in order to prevent the photoresist and other foreign matters from remaining, a wet cleaning process is adopted for thorough cleaning, NMP is selected to remove the glue solution at the temperature of 60 +/-1 ℃, a soaking mode is adopted, the soaking time can be controlled within 15min, and finally, the cleaning is finished and the rinsing is carried out by using pure water for multiple times.
Example 5
The prior art scheme implementation sequence includes: firstly, cleaning and baking a substrate which is subjected to CMOS drive array circuit arrangement to remove pollutants on the surface; step two, normally depositing required metal and oxide film layers; thirdly, coating photoresist and pre-baking; fourthly, exposure and development are carried out; fifthly, etching the needed anode pattern by adopting an etching process; sixthly, removing the photoresist by adopting an etching process; seventhly, removing the photoresist residues by adopting a wet cleaning process; the anode prepared by the prior technical scheme is a universal anode process mode, and the anode does not have the arc-shaped structure.
Reflectivity tests and product experiments were performed on the anode structures prepared using the prior art scheme, examples 3 and 4. The results show that the reflectance of example 3 is improved by about 12% compared with the reflectance of the prior art, the reflectance of example 4 is improved by about 15% compared with the reflectance of the prior art, and the viewing angle of the embodiments 3 and 4 is improved by 9 ° or more compared with the prior art.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. An anode structure, comprising:
the structure comprises a substrate and N structural units, wherein the N structural units are arranged on the substrate at equal intervals, and N is a positive integer greater than or equal to 1;
each of the structural units includes: the structure film layer is arranged on the substrate, and the mixed film layer covers the structure film layer and is arranged on the substrate.
2. The anode structure of claim 1, wherein the structural film is a silicon nitride film, a silicon oxide film, an aluminum film, or an aluminum oxide film.
3. The anode structure of claim 1, wherein the mixed film layer is comprised of an anodic metal and oxide deposit.
4. A method for fabricating an anode structure, wherein the method is used for fabricating an anode structure according to any one of claims 1 to 3, and the method comprises:
step S1: cleaning the substrate and heating and baking the substrate under a vacuum condition;
step S2: depositing a structural film layer with a certain thickness on the substrate by adopting a chemical vapor deposition mode or a physical sputtering deposition mode;
step S3: coating photoresist on the structural film layer by adopting a spin coating mode or an ink-jet printing mode to obtain first photoresist;
step S4: carrying out pre-baking, exposure, development and baking on the substrate with the first photoresist;
step S5: etching the baked substrate in an etching mode, and removing the first photoresist by adopting a dry etching ashing photoresist removing process to obtain an anode initial structure;
step S6: coating photoresist between two adjacent structural film layers on the anode initial structure by adopting a spin coating mode based on different exposure areas to obtain second photoresist, and carrying out pre-baking, exposure, development and baking on the substrate with the second photoresist to obtain an anode intermediate structure;
step S7: depositing a mixed film layer on the anode intermediate structure to obtain an anode final structure;
step S8: and removing the second photoresist on the anode final structure and the mixed film layer on the second photoresist by adopting a dry etching ashing photoresist removing process, and cleaning the stripped anode final structure by adopting a wet cleaning process to obtain the anode structure.
5. The method as claimed in claim 4, wherein the spin coating speed in step S3 is controlled to be between 1000 and 1500rpm, so that the thickness of the first photoresist is controlled to be within 2-3 μm.
6. The method as claimed in claim 4, wherein the pre-baking temperature in step S4 is 90-150 ℃, the pre-baking time is 90-120S, the exposure energy is 150-.
7. The method for fabricating an anode structure according to claim 4, wherein the etching in step S5 uses power of 350W + -20W, bias power of 30W + -5W, etching gas CF4, and the flow rate of 100 plus 150sccm under the pressure of 1 + -0.15 Pa, the reaction temperature is controlled at 80 deg.C + -1 deg.C, the time is selected to be 5-10S, the power of 1000W + -100W is used in the dry etching ashing and stripping process, the bias power is 30W + -5W, the temperature is controlled to be 23 deg.C, the pressure is 1 + -0.15 Pa, the flow rate of oxygen is 50-150sccm, and the ashing time is 80-120S.
8. The method for fabricating an anode structure according to claim 4, wherein the deposition sequence in step S7 is Ti, Al, TiN, and ITO, the power is 1000W + -100W, the reaction pressure is 1 + -0.15 Pa, the flow of argon is 30-50sccm, the flow of oxygen is 10-20sccm, the flow of nitrogen is 10-15sccm, and the temperature is controlled at 80-100 ℃.
9. The method for fabricating an anode structure according to claim 4, wherein the ashing stripping process in step S8 uses 1000W ± 100W of power, 30W ± 5W of bias power, 23 ℃ of temperature, 1 ± 0.15Pa of pressure, 50 to 150sccm of oxygen flow, and 80 to 120S of ashing time; in the wet cleaning process, NMP is selected to remove the glue solution at the temperature of 60 +/-1 ℃, a soaking and washing mode is adopted, and the soaking time is controlled to be 15 min.
10. A display comprising an anode structure according to any one of claims 1 to 3.
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