CN1123956A - 制造半导体集成电路器件的方法 - Google Patents

制造半导体集成电路器件的方法 Download PDF

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Publication number
CN1123956A
CN1123956A CN95106069A CN95106069A CN1123956A CN 1123956 A CN1123956 A CN 1123956A CN 95106069 A CN95106069 A CN 95106069A CN 95106069 A CN95106069 A CN 95106069A CN 1123956 A CN1123956 A CN 1123956A
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CN
China
Prior art keywords
insulating film
metal
lower electrode
silicon
refractory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95106069A
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English (en)
Chinese (zh)
Inventor
铃木尔
奥山幸祐
竹田敏文
久保田胜彦
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Hitachi Ltd
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Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1123956A publication Critical patent/CN1123956A/zh
Pending legal-status Critical Current

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    • H10W20/491—

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  • Design And Manufacture Of Integrated Circuits (AREA)
CN95106069A 1994-05-12 1995-05-12 制造半导体集成电路器件的方法 Pending CN1123956A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6098548A JPH07307386A (ja) 1994-05-12 1994-05-12 半導体集積回路装置の製造方法
JP98548/94 1994-05-12

Publications (1)

Publication Number Publication Date
CN1123956A true CN1123956A (zh) 1996-06-05

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ID=14222749

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95106069A Pending CN1123956A (zh) 1994-05-12 1995-05-12 制造半导体集成电路器件的方法

Country Status (4)

Country Link
JP (1) JPH07307386A (cg-RX-API-DMAC10.html)
KR (1) KR950034685A (cg-RX-API-DMAC10.html)
CN (1) CN1123956A (cg-RX-API-DMAC10.html)
TW (1) TW283789B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100385645C (zh) * 2003-12-19 2008-04-30 株式会社半导体能源研究所 薄膜ic和非接触式薄膜ic器件的制法、id标签和卡
CN101562151B (zh) * 2008-04-15 2012-04-18 和舰科技(苏州)有限公司 具有金属硅化物的半导体结构及形成金属硅化物的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100328709B1 (ko) * 1999-07-07 2002-03-20 박종섭 프로그래밍 부위 형성방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100385645C (zh) * 2003-12-19 2008-04-30 株式会社半导体能源研究所 薄膜ic和非接触式薄膜ic器件的制法、id标签和卡
CN101562151B (zh) * 2008-04-15 2012-04-18 和舰科技(苏州)有限公司 具有金属硅化物的半导体结构及形成金属硅化物的方法

Also Published As

Publication number Publication date
JPH07307386A (ja) 1995-11-21
KR950034685A (ko) 1995-12-28
TW283789B (cg-RX-API-DMAC10.html) 1996-08-21

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