CN112384005A - Wire etching method for full-plate gold-plated printed circuit board - Google Patents
Wire etching method for full-plate gold-plated printed circuit board Download PDFInfo
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- CN112384005A CN112384005A CN202011214852.2A CN202011214852A CN112384005A CN 112384005 A CN112384005 A CN 112384005A CN 202011214852 A CN202011214852 A CN 202011214852A CN 112384005 A CN112384005 A CN 112384005A
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- gold
- plated
- wire
- dry film
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/056—Using an artwork, i.e. a photomask for exposing photosensitive layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The lead etching method for the full-plate gold-plated circuit board comprises the steps of S1, primary external light imaging; s2, secondary dry film pasting, secondary external light imaging is carried out after secondary dry film pasting is carried out on the circuit board to expose the gold-plated area, the film pasting temperature is 110-120 ℃, and the film pasting pressure is 0.4-0.6 MPa; s3, gold plating; s4, removing the dry film of the gold-plated lead; and S5, etching the gold-plated lead. According to the scheme, the dry film is pasted twice, so that sufficient glue is provided to fill a circuit gap, a gap is avoided from appearing at the edge of the circuit, the pasting temperature is set to be 110-120 ℃, and the pasting pressure is set to be 0.4-0.6MPa, so that the dry film is reliably pasted on the circuit board, the occurrence of diffusion coating is avoided, the lead can be completely etched, the problem of lead residue is solved, the problem of electrical performance of the circuit board caused by lead residue is avoided, and the reliability of the circuit board is improved.
Description
Technical Field
The invention belongs to the technical field of circuit boards, and particularly relates to a lead etching method for a full-board gold-plated circuit board.
Background
The circuit board, also called PCB, printed circuit board, it uses insulating board as base material, cuts into certain size, at least attaches a conductive pattern on it, and distributes the hole (such as component hole, fastening hole, metallized hole, etc.), used for replacing the chassis of the electronic components of the past device, and realize the interconnection between the electronic components.
The existing circuit board for aerospace products mostly requires thick gold plating, the gold thickness is not less than 2.5 μm, particularly four sides of the top surface and the side edge of a bonding pad are required to be coated with gold, more patterns designed by the existing product are isolated bonding pads, and no via hole and a conducting wire are designed, so that in order to realize gold plating, a wire for gold plating needs to be designed for the isolated bonding pad, and the wire needs to be removed by etching after the gold plating is finished.
Current methods of wire etching include wet film over wire and dry film over wire methods. However, the wet film cover wire method is used for PTFE + ceramic plates and causes discoloration, and the production process is long, which results in high cost, so the dry film cover wire method is widely used in the industry, and the dry film cover wire method has poor bonding force between the dry film and the circuit, so that the chemical solution can permeate through gaps, the wire can be plated with nickel and gold to cause diffusion plating, and the wire cannot be removed during etching to form wire residues, thereby causing quality defects.
Disclosure of Invention
The invention mainly aims to provide a lead etching method for a full-board gold-plated circuit board, which avoids lead residues.
In order to achieve the above main objective, the method for etching a conductive line of a full-plate gold-plated circuit board according to the present invention includes S1, performing an external light imaging, attaching a dry film on the surface of the circuit board, peeling off the protective film, and performing an imaging of the gold-plated conductive line and the gold-plated area; s2, secondary dry film pasting, secondary external light imaging is carried out after secondary dry film pasting is carried out on the circuit board to expose the gold-plated area, the film pasting temperature is 110-120 ℃, and the film pasting pressure is 0.4-0.6 MPa; s3, gold plating, namely, gold plating is carried out on the gold-plated area by using a gold-plated wire, and acid washing, hot water washing, pure water washing, microetching, pure water washing, thick gold plating, gold recovery, pure water washing and plate drying are carried out in sequence; s4, removing the dry film of the gold-plated lead, removing the dry film on the gold-plated lead by alkaline etching, and sequentially carrying out board entering, bulking, film removing, water washing, strong wind drying and board discharging; and S5, etching the gold-plated wire, removing the gold-plated wire by alkaline etching, and sequentially carrying out plate feeding, etching, ammonia water washing, strong wind drying, hot wind drying and plate discharging.
According to the scheme, the dry film is pasted twice, so that sufficient glue is provided to fill a circuit gap, a gap is avoided from appearing at the edge of the circuit, the pasting temperature is set to be 110-120 ℃, and the pasting pressure is set to be 0.4-0.6MPa, so that the dry film is reliably pasted on the circuit board, the occurrence of diffusion coating is avoided, the lead can be completely etched, the problem of lead residue is solved, the problem of electrical performance of the circuit board caused by lead residue is avoided, and the reliability of the circuit board is improved.
Preferably, in step S2, the dry film is attached by a film attaching machine.
Further, in step S2, the pitch between adjacent circuit boards for performing the secondary dry film pasting is not greater than 10 mm.
Preferably, in step S3, the liquid in the pickling tank for pickling is a sulfuric acid solution, and the sulfuric acid concentration is 70ml/L to 130 ml/L.
Further, in step S3, the microetching amount is 0.3 μm to 3.2 μm.
Further, in step S3, the concentration of the sodium persulfate solution in the microetching bath for microetching is 50g/L to 100g/L, the concentration of the sulfuric acid solution in the microetching bath is 10ml/L to 60ml/L, and the concentration of the copper ions in the microetching bath is less than 25 g/L.
Preferably, in step S3, the gold concentration of the plug gold plating groove and the thick gold plating groove is 2.0g/L-8.0g/L, and the cobalt concentration of the plug gold plating groove is 1.0g/L-2.0 g/L.
Preferably, in step S4, the temperature of the bulking and the membrane stripping is 45-55 ℃, and the pressure of the membrane stripping is 2.0kg/cm2-3.0kg/cm2。
Preferably, in step S5, the concentration of copper ions in the etch bath in which etching is performed is 135g/L to 155g/L, the concentration of chloride ions in the etch bath is 4.8mol/L to 5.8mol/L, the etching temperature is 47 ℃ to 53 ℃, and the etching pressure is 1.5kg/cm2-3.5kg/cm2。
Preferably, in step S5, the pressure of ammonia washing is 1kg/cm2-2kg/cm2。
Drawings
The invention is further illustrated by means of the attached drawings, but the embodiments in the drawings do not constitute any limitation to the invention, and for a person skilled in the art, other drawings can be derived on the basis of the following drawings without inventive effort.
FIG. 1 is a flow chart of an embodiment of a method for etching conductive traces on a full-board gold-plated circuit board according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the method for etching a conductive line for a full-plate gold-plated wiring board of the present embodiment includes:
step S1, performing external light imaging once, sticking a dry film on the surface of the circuit board once, tearing off the protective film, and performing imaging of a gold-plated lead and a gold-plated area, wherein the imaging equipment is an LDI exposure machine;
step S2, secondary dry film pasting, secondary external light imaging is carried out after secondary dry film pasting is carried out on the circuit board to expose the gold-plated area, the imaging device is an LDI exposure machine, the gold-plated wire which does not need to be plated with gold is protected by the dry film to avoid the gold-plated wire being plated with gold, the film pasting temperature is 110-120 ℃, the film pasting pressure is 0.4-0.6MPa, the film pasting speed is 0.9-1.1 m/min, preferably, the film pasting temperature is 110 ℃ or 115 ℃ or 120 ℃, the film pasting pressure is 0.4MPa or 0.5MPa or 0.6MPa, and the film pasting speed is 0.9m/min or 1.0m/min or 1.1 m/min;
step S3, gold plating, namely, gold plating is carried out on the gold-plated area by using a gold-plated wire, and acid washing, hot water washing, pure water washing, micro etching, pure water washing, thick gold plating, gold recovery, pure water washing and plate drying are carried out in sequence;
step S4, removing the dry film of the gold-plated wire, removing the dry film on the gold-plated wire by alkaline etching, and sequentially performing board entering, bulking, film removing, washing, strong wind drying and board discharging;
and step S5, etching the gold-plated wire, removing the gold-plated wire by alkaline etching, and sequentially carrying out plate feeding, etching, ammonia water washing, strong wind drying, hot wind drying and plate discharging.
In step S2, a film sticking machine sticks dry films, and when the circuit board is taken out of the board, a blade is used to cut redundant dry films by clinging to the edge of the board after the circuit board leaves the position of the rubber roller; after the dry film is cut, the film sticking condition of the board surface is checked, wrinkling, foaming and broken film are not allowed, and impurities such as dust particles, residual glue and the like do not exist.
In step S2, the pitch of the adjacent circuit boards to which the secondary dry film pasting is performed is not more than 10 mm.
In step S3, the liquid in the pickling tank for pickling is a sulfuric acid solution with a sulfuric acid concentration of 70ml/L to 130ml/L, preferably 90ml/L or 100ml/L or 105ml/L or 110 ml/L.
In step S3, the microetching amount of the microetching is 0.3 μm to 3.2 μm.
In step S3, the concentration of the sodium persulfate solution in the microetching bath for microetching is 50g/L-100g/L, the concentration of the sulfuric acid solution in the microetching bath is 10ml/L-60ml/L, the concentration of the copper ions in the microetching bath is less than 25g/L, preferably, the concentration of the sodium persulfate solution is 65g/L, 75g/L, 80g/L or 85g/L, and the concentration of the sulfuric acid solution is 25ml/L, 35ml/L, 45ml/L or 48 ml/L.
In step S3, the gold concentration of the plug gold plating groove and the thick gold plating groove is 2.0g/L-8.0g/L, the cobalt concentration of the plug gold plating groove is 1.0g/L-2.0g/L, and preferably, the gold concentration of the plug gold plating groove and the thick gold plating groove is 4.0g/L, 4.5g/L, 5.0g/L or 6.0 g/L.
In step S4, the temperature for bulking and de-filming was 45 deg.CAt-55 ℃, the pressure for stripping the film is 2.0kg/cm2-3.0kg/cm2Preferably, the temperature of the bulking and de-filming is 50 ℃.
In step S5, the concentration of copper ions in the etch bath to be etched is 135g/L to 155g/L, the concentration of chloride ions in the etch bath is 4.8mol/L to 5.8mol/L, the etching temperature is 47 ℃ to 53 ℃, and the etching pressure is 1.5kg/cm2-3.5kg/cm2Preferably, the concentration of copper ions is 145g/L, the concentration of chloride ions is 5.2mol/L, and the etching temperature is 50 ℃.
In step S5, the pressure of ammonia washing is 1kg/cm2-2kg/cm2。
The dry film is pasted twice, the thickness of the dry film is 2mil, so that sufficient glue is provided to fill the line gap, the occurrence of gaps at the edge of the line is avoided, the dry film pasting device is suitable for a circuit board with the copper thickness being larger than 50 mu m, the pasting temperature is set to be 110-120 ℃, and the pasting pressure is set to be 0.4-0.6MPa, so that the dry film is reliably pasted on the circuit board, the occurrence of diffusion coating is avoided, the lead can be completely etched, the problem of lead residue is solved, the problem of electrical performance of the circuit board caused by lead residue is avoided, and the reliability of the circuit board.
Finally, it should be emphasized that the present invention is not limited to the above-described embodiments, but only the preferred embodiments of the invention have been described above, and the present invention is not limited to the above-described embodiments, and any modifications, equivalent substitutions, improvements, etc. within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A lead etching method for a full-plate gold-plated circuit board is characterized by comprising the following steps:
s1, imaging by external light, sticking a dry film on the surface of the circuit board for the first time, tearing off the protective film, and imaging the gold-plated lead and the gold-plated area;
s2, secondary dry film pasting, secondary external light imaging is carried out after secondary dry film pasting is carried out on the circuit board to expose the gold-plated area, the film pasting temperature is 110-120 ℃, and the film pasting pressure is 0.4-0.6 MPa;
s3, gold plating, namely, gold plating is carried out on the gold-plated area by using a gold-plated wire, and acid washing, hot water washing, pure water washing, microetching, pure water washing, thick gold plating, gold recovery, pure water washing and plate drying are carried out in sequence;
s4, removing the dry film of the gold-plated lead, removing the dry film on the gold-plated lead by alkaline etching, and sequentially carrying out board entering, bulking, film removing, water washing, strong wind drying and board discharging;
and S5, etching the gold-plated wire, removing the gold-plated wire by alkaline etching, and sequentially carrying out plate feeding, etching, ammonia water washing, strong wind drying, hot wind drying and plate discharging.
2. The wire etching method according to claim 1, wherein:
in the step S2, a dry film is attached by a film attaching machine.
3. The wire etching method according to claim 2, wherein:
in the step S2, the distance between adjacent circuit boards for the secondary dry film pasting is not more than 10 mm.
4. The wire etching method according to claim 1, wherein:
in step S3, the liquid in the pickling tank for pickling is a sulfuric acid solution, and the sulfuric acid concentration is 70ml/L to 130 ml/L.
5. The wire etching method according to claim 4, wherein:
in the step S3, the microetching amount of the microetching is 0.3 μm to 3.2 μm.
6. The wire etching method according to claim 4, wherein:
in the step S3, the concentration of the sodium persulfate solution in the microetching bath in which the microetching is performed is 50g/L to 100g/L, the concentration of the sulfuric acid solution in the microetching bath is 10ml/L to 60ml/L, and the concentration of the copper ions in the microetching bath is less than 25 g/L.
7. The wire etching method according to claim 1, wherein:
in the step S3, the gold concentration of the plug gold plating groove and the thick gold plating groove is 2.0g/L-8.0g/L, and the cobalt concentration of the plug gold plating groove is 1.0g/L-2.0 g/L.
8. The wire etching method according to claim 7, wherein:
in the step S4, the temperature of the bulking and the film stripping is 45-55 ℃, and the pressure of the film stripping is 2.0kg/cm2-3.0kg/cm2。
9. The wire etching method according to claim 1, wherein:
in the step S5, the concentration of copper ions in the etch bath in which the etching is performed is 135g/L to 155g/L, the concentration of chloride ions in the etch bath is 4.8mol/L to 5.8mol/L, the temperature of the etching is 47 ℃ to 53 ℃, and the pressure of the etching is 1.5kg/cm2-3.5kg/cm2。
10. The wire etching method according to any one of claims 1 to 9, wherein:
in the step S5, the pressure of the ammonia water washing is 1kg/cm2-2kg/cm2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011214852.2A CN112384005B (en) | 2020-11-03 | 2020-11-03 | Lead etching method for gold-plated printed circuit board |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011214852.2A CN112384005B (en) | 2020-11-03 | 2020-11-03 | Lead etching method for gold-plated printed circuit board |
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| CN112384005B CN112384005B (en) | 2022-04-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113905533A (en) * | 2021-08-30 | 2022-01-07 | 珠海杰赛科技有限公司 | PCB lead residue processing method and printed circuit board |
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| CN112384005B (en) | 2022-04-29 |
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