CN112331644A - Anti-irradiation high-speed photoelectric coupler and manufacturing method thereof - Google Patents
Anti-irradiation high-speed photoelectric coupler and manufacturing method thereof Download PDFInfo
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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Abstract
The invention belongs to the field of photoelectric couplers, and particularly relates to an anti-irradiation high-speed photoelectric coupler, which comprises: the device comprises a base, a photosensitive integration plate, a cover plate and a packaging shell; a groove is formed in the base and used for placing the photosensitive integrated plate and the cover plate; the photosensitive integrated board comprises a bottom plate, a polygonal metal guide sheet, a lower metal guide sheet, a photosensitive integrated digital circuit output chip and two supporting seats; the cover plate comprises a fixing plate, a short metal guide sheet, a long metal guide sheet and a light-emitting LED light source chip; the base, the photosensitive integrated board and the cover plate are hermetically packaged by adopting a packaging shell; the output stage of the invention adopts a photosensitive integrated digital circuit output chip, has high integration level and simple circuit form and structure, can realize open-circuit output of a collector and totem-pole output by adjusting the output form of the circuit, and improves the transmission efficiency.
Description
Technical Field
The invention belongs to the field of photoelectric couplers, and particularly relates to an anti-radiation high-speed photoelectric coupler and a manufacturing method thereof.
Background
In the field of data transmission and communication, the high-speed photoelectric coupler is mainly used for realizing digital signal isolation transmission among systems and improving the anti-interference performance of signal transmission among the systems, is a common device in a digital signal isolation system, and along with the development of military aerospace technology, an aerospace equipment system requires the high-speed photoelectric coupler to have the characteristics of radiation resistance and high reliability. However, in the prior art, the conventional high-speed photoelectric coupler cannot be used as an aerospace device because the internal light source chip and the light receiving and processing chip of the conventional high-speed photoelectric coupler have poor radiation resistance and reliability, and cannot meet the requirement of digital signal isolation transmission of an aerospace equipment system.
The technical problem is solved by designing an internal circuit of the photoelectric coupler, adding a fixing device for the radiation resistance of the chip and designing the reliability, so that the isolation transmission requirement of the photoelectric coupler on high-speed digital signals among equipment systems in the aerospace environment is met.
Disclosure of Invention
In order to solve the problems in the prior art, the invention designs an anti-irradiation high-speed photoelectric coupler, which comprises: the device comprises: the device comprises a base 1, a photosensitive integration plate 2, a cover plate 3 and a packaging shell 4;
a groove 11 is arranged in the base 1 and used for placing the photosensitive integration plate 2 and the cover plate 3;
the photosensitive integration board 2 includes: a bottom plate 21, a polygonal metal guide plate 22, a lower metal guide plate 23, a photosensitive integrated digital circuit output chip 24 and two supporting seats 25; the two supporting seats are respectively arranged at two ends of the bottom plate 21, and the polygonal metal guide 22 is arranged at the upper part of the upper plane of the bottom plate 21 and covers the upper supporting seat; the lower metal guide sheet 23 is arranged at the lower part of the upper plane of the bottom plate 21 and covers the supporting seat at the lower part; the photosensitive integrated digital circuit output chip 24 is arranged on the lower metal guide sheet 23, and the pin of the photosensitive integrated digital circuit output chip 24 is conducted with the polygonal metal guide sheet 22 through a gold wire;
the cover plate 3 comprises a fixing plate 31, a short metal guide sheet 32, a long metal guide sheet 33 and a light-emitting LED light source chip 34; the short metal guide plate 32 is arranged on the upper part of the upper plane of the fixing plate 31; the long metal guide sheet 33 is arranged at the lower part of the upper plane of the fixing plate 31; the light-emitting LED light source chip 34 is arranged on the long metal guide sheet 33; a gold wire is LED out from the pin of the light-emitting LED light source chip 34 and is communicated with the short metal guide sheet 32;
one surface of the cover plate 3 provided with the metal guide sheet is placed on the photosensitive integration plate 2, the short metal guide sheet 32 on the cover plate is in contact conduction with the polygonal metal guide sheet 22 of the photosensitive integration plate 2, and the long metal guide sheet 33 on the cover plate is in conduction with the lower metal guide sheet 23 of the photosensitive integration plate 2;
and the base 1, the photosensitive integrated board 2 and the cover plate 3 are hermetically packaged by adopting a packaging shell 4.
Preferably, the size of the groove 11 of the base 1 is the same as the size of the photosensitive integration plate 2 and the cover plate 3.
Preferably, the photosensitive integrated digital circuit output chip 24 comprises a photosensitive detector, a digital processing circuit and a silicon-based single chip; the photosensitive detector and the digital processing circuit are integrated on the silicon-based single chip.
Furthermore, the digital processing circuit comprises an open collector output circuit and a totem-pole output circuit; a photosensitive input stage of the collector open-circuit output circuit adopts a Schottky clamping circuit, a middle stage adopts a transconductance amplifying circuit structure, and an output stage adopts a Schottky triode to realize level conversion and transmission rate; the totem-pole output circuit adopts an active bleeder network and a Schottky anti-saturation structure to improve the response speed and the current output capability.
Preferably, the LED light source chip (3) is a double heterojunction light emitting diode with AlGaAs/GaAs/AlGaAs front-side light emitting, GaAs is used as an active region, and AlGaAs with different components is used as a limiting layer; growing a Distributed Bragg Reflector (DBR) on a substrate; a fork-shaped electrode structure is adopted to provide uniformly distributed current for the light source.
Preferably, the AlGaAs double heterostructure light emitting LED light source chip is coupled and aligned with the photosurface of the light sensitive integrated digital circuit output chip 4 when the cover plate 2 is placed.
Preferably, the package housing 4 is a leadless surface mount type sealable ceramic metalized case.
A method for manufacturing a radiation-resistant high-speed photoelectric coupler comprises the following steps:
step 1: the base 1 of the high-speed photoelectric coupler is designed by adopting a metal ceramic process;
step 2: the bottom plate 21 of the photosensitive integrated plate 2 is designed by adopting a metal ceramic process, and two supporting seats are fixed on the upper part and the lower part of the bottom plate 21 in a welding mode; fixing a polygonal metal guide 22 and a lower metal guide 23 in the upper and lower portions of the base plate 21, respectively, and covering the support base; mounting the photosensitive integrated digital circuit output chip 24 on the lower metal guide sheet 23 by eutectic soldering process, and connecting the photosensitive integrated digital circuit output chip 24 with the polygonal metal guide sheet 22 by gold wires to realize electrical conduction;
and step 3: fixing the photosensitive integrated board 2 in the groove of the base 1 by adopting a eutectic welding process;
and 4, step 4: the fixing plate 31 of the ceramic cover plate is designed by adopting a metal ceramic process, and a semicircular notch is arranged on the side surface of the fixing plate; fixing the short metal guide plate 32 and the long metal guide plate 33 on the upper and lower parts of the fixing plate 31 by welding; fixing the AlGaAs double-heterostructure light-emitting LED light source chip 34 on the long metal guide sheet 33, and connecting the light-emitting LED light source chip 34 with the short metal guide sheet 32 by using gold wires to realize electrical conduction;
and 5: fixing the ceramic cover plate in the groove of the base 1 by adopting a sintering process, and coupling and aligning the AlGaAs double-heterostructure light-emitting LED light source chip 34 with the photosensitive detection part of the photosensitive integrated digital circuit output chip 24 when the ceramic cover plate is installed;
step 6: the base 1, the photosensitive integrated board 2 and the ceramic cover plate 3 are hermetically packaged by adopting a packaging shell; the packaging mode is a parallel seam welding mode.
The beneficial technical effects of the invention are as follows: high speed light of the inventionThe output stage of the electric coupler adopts a photosensitive integrated digital circuit output chip, the integration level is high, the circuit form and the structure are simple, the open-circuit output of a collector electrode and the output of a totem-pole can be realized by adjusting the output form of the circuit, the transmission rate can reach 50MB/s, in addition, the irradiation resistance reinforcement design is carried out on the light source chip and the photosensitive integrated output circuit output chip, the total ionization dose of 100krad (si) and the neutron displacement damage of 2 multiplied by 10 can be met11Neutron/cm2The irradiation requirement of (2) meets the data isolation communication requirement of the aerospace equipment.
Drawings
FIG. 1 is a schematic view of the internal structure of the present invention;
FIG. 2 is a schematic view of the present invention;
wherein, 1, a base, 11 and a groove; 2. photosensitive integrated board, 21, bottom board, 22, polygonal metal guide sheet, 23, lower metal guide sheet, 24, photosensitive integrated digital circuit output chip, 25 and support seat; 3. the LED light source comprises a cover plate 31, a fixing plate 32, short metal guide sheets 33, long metal guide sheets 34 and a light-emitting LED light source chip; 4. and (6) packaging the shell.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
The principle of the invention includes that a light source chip shows to emit infrared light under the action of a light-emitting drive control circuit, a photosensitive detector on an output chip of a photosensitive integrated digital circuit receives the infrared light and converts the infrared light into photocurrent, the photocurrent enters an output monolithic integrated chip, the photocurrent is amplified, shaped and output to be proportional to an electric signal of an input signal through internal amplification, shaping, filtering and processing of the chip, photoelectric isolation transmission of the digital signal is realized, and device output comprises two forms of collector open circuit output and totem pole output.
A radiation-resistant high-speed photocoupler, as shown in fig. 1, comprising: the device comprises a base 1, a photosensitive integration plate 2, a cover plate 3 and a packaging shell 4; and the base 1, the photosensitive integrated board 2 and the cover plate 3 are hermetically packaged by adopting a packaging shell 4.
Example 1
The utility model provides a base 1 of anti-irradiation's high-speed optoelectronic coupler, base 1 is the cuboid structure, and cuboid structure inside is provided with recess 11, the recess is used for placing photosensitive integrated board 2 and apron 3.
Preferably, at least 1 groove is arranged on the base 1; the number of the photosensitive integration plates 2 and the cover plates 3 can be set according to the number of the grooves. Preferably, the number of the grooves is 2.
Preferably, the groove is a cuboid groove.
Preferably, the size of the groove 11 of the base 1 is the same as the size of the photosensitive integration plate 2 and the cover plate 3.
Example 2
A photosensitive integrated plate 2 of the high-speed photoelectric coupler of anti-radiation, photosensitive integrated plate 2 includes the bottom plate 21, the metal guide vane 22 of the multiangular, lower metal guide vane 23, photosensitive integrated digital circuit output chip 24 and two supporting seats 25; the two supporting seats are respectively arranged at two ends of the bottom plate 21, and the polygonal metal guide 22 is arranged at the upper part of the upper plane of the bottom plate 21 and covers the upper supporting seat; the lower metal guide sheet 23 is arranged at the lower part of the upper plane of the bottom plate 21 and covers the supporting seat at the lower part; the photosensitive integrated digital circuit output chip 24 is arranged on the lower metal guide sheet 23, and the pin of the photosensitive integrated digital circuit output chip 24 is conducted with the polygonal metal guide sheet 22 through a gold wire.
Preferably, the polygonal metal conducting strip 22 is provided with a plurality of metal conducting strip corners, and the pins of the output chip 24 of the photosensitive integrated digital circuit are connected with the plurality of metal conducting strip corners through gold wires to form electrical conduction. The polygonal metal lead 22 is designed in this manner, so that the reliability of the electrical connection can be effectively ensured.
A photosensitive integrated digital circuit output chip 24 comprises a photosensitive detector, a digital processing circuit and a silicon-based single chip; the photosensitive detector and the digital processing circuit are integrated on the silicon-based single chip.
Preferably, the photosensitive integrated digital circuit output chip 24 is fabricated using a bipolar process.
Preferably, the digital output circuit comprises two circuit forms of open collector output and totem-pole output, the photosensitive input stage of the open collector output structure adopts a schottky clamping circuit, the intermediate stage adopts a transconductance amplifying circuit structure, and the output stage adopts a schottky triode to realize level conversion and transmission rate. The totem pole output circuit adopts an active bleeder network and a Schottky anti-saturation structure to improve the response speed and the current output capability, and adopts a multilayer dielectric film formed by a low-temperature plasma enhanced chemical vapor deposition process technology to realize the irradiation requirement of a photosensitive part in order to ensure the anti-irradiation performance of an output chip of the photosensitive integrated digital circuit. When the bipolar junction transistor is manufactured, the isolation layer is added, so that the anti-irradiation performance of the photosensitive monolithic integrated circuit is improved, and the irradiation requirement of a signal processing part is met.
The output stage of the invention adopts the photosensitive integrated digital circuit output chip, solves the problems of large volume and poor reliability of discrete components, the output integrated circuit can adjust the transmission rate and the output form according to the application environment of the circuit, and an amplification shaping filter circuit is not required to be additionally arranged11Neutron/cm2The radiation requirement, the anti-interference capability and the environmental adaptability are strong, so that the data isolation communication technology of the high-speed photoelectric coupler can be applied in the aerospace radiation-resistant high-reliability environment.
Preferably, the support seat 25 is a rectangular prism structure, and the length of the support seat 25 is the same as the width of the groove 11, and the height is lower than the depth of the groove.
Example 3
A cover plate 3 of a radiation-resistant high-speed photocoupler, said cover plate 3 comprising: a fixing plate 31, a short metal guide sheet 32, a long metal guide sheet 33, and a light emitting LED light source chip 34; the short metal guide plate 32 is arranged on the upper part of the upper plane of the fixing plate 31; the long metal guide sheet 33 is arranged at the lower part of the upper plane of the fixing plate 31; the light-emitting LED light source chip 34 is arranged on the long metal guide sheet 33; a gold wire is LED out from the pin of the light emitting LED light source chip 34 to be conducted with the short metal conducting sheet 32.
Preferably, the side of the fixing plate 31 of the cover plate is provided with a semicircular notch through which the fixing base plate 31 placed on the groove 11 can be more easily removed.
Preferably, the cover plate is a ceramic cover plate.
Preferably, the light-emitting LED light source chip 34 is a double heterojunction light-emitting diode with AlGaAs/GaAs/AlGaAs front surface light emission.
The light source chip structure is as follows;
the substrate is doped with GaAs n-type Si, n is 3 × 1018cm-3；
1 st GaAs buffer layer, n-type Si doped, n ═ 6 × 1018cm-3，0.5μm；
GaAs active layer of the 4 th layer, P-type Zn lightly doped n is 2 x 1017cm-3，2.2μm；
5 th layer of Al0.2Ga0.8As confinement layer, P-type Zn doping, n 5 × 1018cm-3，0.7μm；
Layer 6, 7 pairs of Ga0.9Al0.1As and AlAs material DBR structure: ga0.9Al0.1The As growth thickness h is 61.8 nm. The thickness h of the AlAs growth is 75 nm. n-type Si doping, n being 5X 1018cm-3；
7 th layer of Al0.1Ga0.9As～Al0.5Ga0.5As graded layer, P type Zn-doping, n being 5X 1018cm-3，0.15μm；
8 th layer of Al0.5Ga0.5As current spreading layer, P-type Zn doping, n is 5 × 1018cm-3，6μm；
The 9 th layer is heavily doped with P-type GaAs top layer, is doped with Zn, and n is 2 multiplied by 1019cm-3，0.1μm。
The light-emitting LED light source chip 34 adopts AlGaAs/GaAs and AlGaAs/AlGaAs material systems to carry out structural design of a light source, takes GaAs as an active region material, takes AlGaAs with different components as limiting layers to emit red light with a waveband of 850nm to 880nm, improves the output power of an LED in order to break through the difficulty of low light escape rate caused by factors such as substrate light absorption, metal electrode blocking and the like, a growth DBR (distributed Bragg reflection layer) can isolate substrate absorption, the reflector is alternately composed of materials with high and low refractive indexes, and an RCLED (resonance enhanced light-emitting diode) epitaxial structure with two DBR (distributed Bragg reflection layer) reflectors is adopted. A fork-shaped electrode structure is adopted to provide uniformly distributed current for a light source, so that light can escape from an active area and is not blocked by an electrode, and in addition, in order to ensure the anti-irradiation performance of a light source chip, the structure optimization design of a passivation layer is carried out.
The AlGaAs double-heterostructure light-emitting LED light source chip converts an electrical signal into an infrared light signal under the action of the electrical signal, the optical signal converts the optical signal into a current signal through the output chip of the photosensitive integrated digital circuit, the current signal enters the output processing integrated circuit, the electrical signal is output after filtering, shaping and amplifying, the electro-optic-electrical transmission of the input electrical signal is realized, the output of a device comprises two forms of open circuit output of a collector and totem pole output, the transmission rate can reach 50MB/s, in addition, the anti-irradiation reinforcement design is carried out on the light source chip and the output chip of the photosensitive integrated output circuit, the total ionization dose of 100krad (si), and the neutron displacement damage of 2 multiplied by 10 can be met11Neutron/cm2The irradiation requirement of (2) meets the data isolation communication requirement of the aerospace equipment.
Example 4
A packaging shell 4 of an anti-radiation high-speed photoelectric coupler is shown in figure 2 and is a leadless surface-mounted ceramic metalized shell. The leadless surface-mounted ceramic metalized shell is of a cuboid structure, and a leadless surface-mounted device is arranged outside the leadless surface-mounted ceramic metalized shell.
Example 5
A method for manufacturing a radiation-resistant high-speed photoelectric coupler comprises the following steps:
step 1: the base 1 of the high-speed photoelectric coupler is designed by adopting a metal ceramic process;
step 2: the bottom plate 21 of the photosensitive integrated plate 2 is designed by adopting a metal ceramic process, and two supporting seats are fixed on the upper part and the lower part of the bottom plate 21 in a welding mode; fixing a polygonal metal guide 22 and a lower metal guide 23 in the upper and lower portions of the base plate 21, respectively, and covering the support base; mounting the photosensitive integrated digital circuit output chip 24 on the lower metal guide sheet 23 by eutectic soldering process, and connecting the photosensitive integrated digital circuit output chip 24 with the polygonal metal guide sheet 22 by gold wires to realize electrical conduction;
and step 3: fixing the photosensitive integrated board 2 in the groove of the base 1 by adopting a eutectic welding process;
and 4, step 4: the fixing plate 31 of the ceramic cover plate is designed by adopting a metal ceramic process, and a semicircular notch is arranged on the side surface of the fixing plate; fixing the short metal guide plate 32 and the long metal guide plate 33 on the upper and lower parts of the fixing plate 31 by welding; fixing the AlGaAs double-heterostructure light-emitting LED light source chip 34 on the long metal guide sheet 33, and connecting the light-emitting LED light source chip 34 with the short metal guide sheet 32 by using gold wires to realize electrical conduction;
and 5: fixing the ceramic cover plate in the groove of the base 1 by adopting a sintering process, and coupling and aligning the AlGaAs double-heterostructure light-emitting LED light source chip 34 with the photosensitive detection part of the photosensitive integrated digital circuit output chip 24 when the ceramic cover plate is installed;
step 6: the base 1, the photosensitive integrated board 2 and the ceramic cover plate 3 are hermetically packaged by adopting a packaging shell; the packaging mode is a parallel seam welding mode.
In the description of the present invention, it is to be understood that the terms "top", "bottom", "one end", "upper", "one side", "inner", "front", "rear", "center", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "disposed," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integral; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. An irradiation-resistant high-speed photoelectric coupler is characterized in that the device comprises: the device comprises a base (1), a photosensitive integration plate (2), a cover plate (3) and a packaging shell (4);
a groove (11) is formed in the base (1) and used for placing the photosensitive integrated plate (2) and the cover plate (3);
the photosensitive integration plate (2) comprises: the device comprises a bottom plate (21), a polygonal metal guide sheet (22), a lower metal guide sheet (23), a photosensitive integrated digital circuit output chip (24) and two supporting seats (25); the two supporting seats are respectively arranged at two ends of the bottom plate (21), and the polygonal metal guide sheet (22) is arranged at the upper part of the upper plane of the bottom plate (21) and covers the supporting seat at the upper part; the lower metal guide sheet (23) is arranged at the lower part of the upper plane of the bottom plate (21) and covers the supporting seat at the lower part; the photosensitive integrated digital circuit output chip (24) is arranged on the lower metal guide sheet (23), and pins of the photosensitive integrated digital circuit output chip (24) are conducted with the polygonal metal guide sheet (22) through gold wires;
the cover plate (3) comprises a fixing plate (31), a short metal guide sheet (32), a long metal guide sheet (33) and a light-emitting LED light source chip (34); the short metal guide sheet (32) is arranged on the upper part of the upper plane of the fixing plate (31); the long metal guide sheet (33) is arranged at the lower part of the upper plane of the fixing plate (31); the light-emitting LED light source chip (34) is arranged on the long metal guide sheet (33); a gold wire is LED out from a pin of a light-emitting LED light source chip (34) and is conducted with a short metal guide sheet (32);
one surface of the cover plate (3) provided with the metal guide sheet is placed on the photosensitive integration plate (2), the short metal guide sheet (32) on the cover plate is in contact conduction with the polygonal metal guide sheet (22) of the photosensitive integration plate (2), and the long metal guide sheet (33) on the cover plate is in conduction with the lower metal guide sheet (23) of the photosensitive integration plate (2);
and the base (1), the photosensitive integrated board (2) and the cover plate (3) are hermetically packaged by adopting a packaging shell (4).
2. The radiation-resistant high-speed photoelectric coupler as claimed in claim 1, wherein the size of the groove (11) of the base (1) is the same as that of the photosensitive integration plate (2) and the cover plate (3).
3. The radiation-resistant high-speed photoelectric coupler as claimed in claim 1, wherein the photosensitive integrated digital circuit output chip (24) comprises a photosensitive detector, a digital processing circuit and a silicon-based single chip; the photosensitive detector and the digital processing circuit are integrated on the silicon-based single chip.
4. The radiation-resistant high-speed photoelectric coupler is characterized in that the digital processing circuit comprises an open collector output circuit and a totem-pole output circuit; a photosensitive input stage of the collector open-circuit output circuit adopts a Schottky clamping circuit, a middle stage adopts a transconductance amplifying circuit structure, and an output stage adopts a Schottky triode to realize level conversion and transmission rate; the totem-pole output circuit adopts an active bleeder network and a Schottky anti-saturation structure to improve the response speed and the current output capability.
5. The radiation-resistant high-speed photocoupler according to claim 1, wherein the LED light source chip (3) is a double heterojunction light emitting diode with AlGaAs/GaAs/AlGaAs front surface emitting, GaAs is used as an active region, and AlGaAs of different compositions is used as a confinement layer; growing a Distributed Bragg Reflector (DBR) on a substrate; a fork-shaped electrode structure is adopted to provide uniformly distributed current for the light source.
6. The high-speed photocoupler of claim 1, wherein the AlGaAs double heterostructure light-emitting LED light source chip is aligned with the photosensitive surface of the photosensitive integrated digital circuit output chip (4) when the cover plate (2) is placed.
7. The radiation-resistant high-speed photoelectric coupler as claimed in claim 1, wherein the packaging shell (4) is a leadless surface-mounted sealable ceramic metalized shell.
8. A method for manufacturing a radiation-resistant high-speed photoelectric coupler is characterized by comprising the following steps:
step 1: a base (1) of the high-speed photoelectric coupler is designed by adopting a metal ceramic process;
step 2: a bottom plate (21) of the photosensitive integrated plate (2) is designed by adopting a metal ceramic process, and two supporting seats are fixed at the upper part and the lower part of the bottom plate (21) in a welding mode; fixing a polygonal metal guide piece (22) and a lower metal guide piece (23) in the upper part and the lower part of a bottom plate (21) respectively, and covering a support seat; mounting a photosensitive integrated digital circuit output chip (24) on the lower metal guide sheet (23) by adopting an eutectic soldering process, and connecting the photosensitive integrated digital circuit output chip (24) with the polygonal metal guide sheet (22) by adopting a gold wire to realize electrical conduction;
and step 3: the photosensitive integrated board (2) is fixed in the groove of the base (1) by adopting a eutectic welding process;
and 4, step 4: a fixing plate (31) of the ceramic cover plate is designed by adopting a metal ceramic process, and a semicircular notch is arranged on the side surface of the fixing plate; fixing the short metal guide sheet (32) and the long metal guide sheet (33) on the upper part and the lower part of the fixing plate (31) by adopting a welding mode; fixing an AlGaAs double-heterostructure light-emitting LED light source chip (34) on a long metal guide sheet (33), and connecting the light-emitting LED light source chip (34) with a short metal guide sheet (32) by adopting a gold wire to realize electrical conduction;
and 5: fixing a ceramic cover plate in a groove of a base (1) by adopting a sintering process, and coupling and aligning an AlGaAs double-heterostructure light-emitting LED light source chip (34) and a photosensitive detection part of a photosensitive integrated digital circuit output chip (24) when the ceramic cover plate is installed;
step 6: the base (1), the photosensitive integrated board (2) and the ceramic cover plate (3) are hermetically packaged by adopting a packaging shell; the packaging mode is a parallel seam welding mode.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN113725207A (en) * | 2021-08-09 | 2021-11-30 | 中国电子科技集团公司第四十四研究所 | Transmission gain adjustable high-precision linear optocoupler structure and coupling method thereof |
| CN113725207B (en) * | 2021-08-09 | 2024-07-05 | 中国电子科技集团公司第四十四研究所 | High-precision linear optical coupler structure with adjustable transmission gain and coupling method thereof |
| CN113922207A (en) * | 2021-10-08 | 2022-01-11 | 中国电子科技集团公司第四十四研究所 | High-speed high-precision linear optocoupler based on quantum dot laser and InGaAs detector |
| CN113933945A (en) * | 2021-10-08 | 2022-01-14 | 中国电子科技集团公司第四十四研究所 | High-precision linear optical coupler based on variable ratio beam splitter |
| CN113933945B (en) * | 2021-10-08 | 2023-02-07 | 中国电子科技集团公司第四十四研究所 | High-precision linear optical coupler based on variable ratio beam splitter |
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| CN112331644B (en) | 2023-05-23 |
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