CN110518087B - Single-chip LED photoelectric coupler, integrated circuit thereof and manufacturing method - Google Patents
Single-chip LED photoelectric coupler, integrated circuit thereof and manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 89
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 89
- 238000005530 etching Methods 0.000 claims description 31
- 238000005468 ion implantation Methods 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 10
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention discloses a single-chip LED photoelectric coupler which comprises a silicon photodetector, a first dielectric layer and an LED light source which are axially arranged from bottom to top and are manufactured on a first substrate by using an integrated circuit process. The invention also discloses a manufacturing method of the single-chip LED photoelectric coupler. The invention further discloses an integrated circuit of the single-chip LED photoelectric coupler and a manufacturing method thereof. Compared with the traditional photoelectric coupler with a planar structure manufactured by using a dispensing process or the photoelectric coupler with an axial structure manufactured by using an LED light source, the light source detector and the LED light source are manufactured on the same substrate, the light source detector has the advantages that the light source and the light detector are required to be electrically welded, the integration level of the device is high, the packaging size is reduced, and the manufacturing difficulty and the manufacturing cost are reduced. The single-chip LED photoelectric coupler can be integrated with a circuit on the same substrate, further reduces the manufacturing cost, improves the integration level of the circuit, and is suitable for the technical field of integration of photoelectric couplers.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectricity, relates to a single-chip LED photoelectric coupler, and in particular relates to a single-chip LED photoelectric coupler, an integrated circuit thereof and a manufacturing method thereof.
Background
Photocouplers are an important type of opto-electronic device that can send signals from one circuit to another, use light instead of wires, convert electrical signals to optical signals using Light Emitting Diodes (LEDs), and receive optical signals using photodetectors and convert them to electrical signals. The photoelectric coupler has the advantages of strong anti-interference capability, good reliability, electric isolation and the like, and is widely applied to circuits such as logic switches, digital-to-analog conversion and the like.
With the development of the electronic information industry, the electronic equipment terminal is miniaturized and integrated, and this also puts higher demands on the photoelectric coupler, requiring smaller volume and higher integration level. Conventional photocouplers package an LED of GaAsP material with a photodetector, with either planar or axial placement of the two devices. The planar structure is adopted to manufacture the photoelectric coupler, and a dispensing process is needed; the use of an axial structure requires electric welding of the light source and the light detector. With the reduction of the packaging size, the dispensing and spot welding processes are more difficult, the manufacturing difficulty is increased, and the manufacturing cost is very high.
From the standpoint of cost and circuit density, the optimal implementation mode of the photoelectric coupler is to embed the photoelectric coupler into a silicon chip, so that the manufacturing cost is reduced, and the integration level of the circuit can be improved.
Disclosure of Invention
The invention aims to provide a single-chip LED photoelectric coupler, wherein an LED light source and a light detector are manufactured on the same substrate, so that the integration level of the photoelectric coupler is improved, the single-chip LED photoelectric coupler and a circuit can be integrated on the same substrate, the integration level of the whole circuit is further improved, and meanwhile, the manufacturing cost is reduced.
Another object of the present invention is to provide a method for manufacturing the single-chip LED photocoupler.
It is a third object of the present invention to provide an integrated circuit comprising the single chip LED optocoupler described above.
It is a further object of the present invention to provide a method for fabricating the above integrated circuit.
The technical scheme adopted by the invention for realizing the purposes is as follows:
a single-chip LED photoelectric coupler comprises a silicon photodetector, a first dielectric layer and an LED light source, wherein the silicon photodetector, the first dielectric layer and the LED light source are axially arranged from bottom to top and are manufactured on a first substrate;
the first substrate is filled with a first deep P well, a first high depth-to-width P well and a second high depth-to-width P well which are connected with the first deep P well, and the first deep P wellA first island is formed by connecting a high-depth-width ratio P well and a second high-depth-width ratio P well, and a first thin n is embedded at the upper part of the first island + A well;
the positive electrode of the silicon photodetector is formed from a first thin n + The well is led out, and the negative electrode of the silicon photodetector is led out from the P well with the first high depth-to-width ratio;
the first substrate is n － A silicon substrate.
As a limitation: al grows between the LED light source and the first dielectric layer 2 O 3 A buffer layer;
the LED light source is L-shaped and comprises an n-type GaP layer and an n-type GaAs which are sequentially grown from bottom to top 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and P + GaAs (gallium arsenide) 1-X P X Constant composition layer, n-type GaAs 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and P + GaAs (gallium arsenide) 1-X P X The constant composition layer has the same width, and the n-type GaP layer has a width larger than that of GaAs 1-X P X The width of the composition graded layer;
the P is + GaAs (gallium arsenide) 1-X P X A light source positive electrode is arranged on the constant component layer, and a second thin n is injected at the transverse free end of the LED light source and the upper part of the n-type GaP layer + Well from the second thin n + The trap leads out the negative electrode of the light source;
the n-type GaAs 1-X P X Constant composition layer, P + GaAs (gallium arsenide) 1-X P X X=x in constant component layer 0 ,X 0 ∈[0.55,0.7]N-type GaAs 1-X P X The X in the composition gradual change layer is reduced from 1 to X from bottom to top 0 。
A manufacturing method of a single-chip LED photoelectric coupler is used for manufacturing the single-chip LED photoelectric coupler, and comprises the following steps of:
1. by n - The doped silicon wafer is used as a first substrate, and an ion implantation process is used by means of a mask, wherein a first deep P well, a first high-depth-to-width-ratio P well and a second high-depth-to-width-ratio are sequentially completed on the first substrateForming a first island by P-well fabrication, and then completing a first thin n-well on the upper part of the first island + Manufacturing a trap;
2. a first dielectric layer grows on the upper surface of the first substrate by adopting a low-pressure chemical vapor deposition method;
3. manufacturing an LED light source on the first dielectric layer by utilizing liquid phase epitaxy;
4. and manufacturing a silicon light detector anode, a silicon light detector cathode, a light source anode and a light source cathode by adopting magnetron sputtering.
As a limitation: after the step two is completed and before the step three is carried out, an Al layer with the thickness of 10 nm-50 nm is grown above the first dielectric layer by utilizing an atomic layer deposition process 2 O 3 And a buffer layer.
As a further limitation, the third step includes the following steps performed in order:
s1, utilizing a liquid phase epitaxy technology, firstly, performing a process of preparing a silicon nitride film on Al 2 O 3 Epitaxially growing an n-type GaP layer on the buffer layer, and sequentially epitaxially growing n-type GaAs on the n-type GaP layer 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and p + GaAs (gallium arsenide) 1-X P X A constant composition layer;
s2, adopting an inductively coupled plasma etching process to carry out n-type GaAs 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and p + GaAs (gallium arsenide) 1-X P X Etching one side of the constant component layer above the second high aspect ratio P well until the n-type GaP layer is exposed, so as to form a transverse free end of the LED light source;
s3, adopting an inductively coupled plasma etching process to carry out n-type GaAs 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layered, p+ GaAs 1-X P X Etching one side of the constant component layer and the n-type GaP layer, which is positioned above the first high depth-to-width ratio P well, until the first dielectric layer is exposed;
s4, adopting an inductively coupled plasma etching process to respectively etch the first high depth-to-width ratio P well and the first thin n + Etching the first dielectric layer above the well to form a first electrode through hole and a second electrode through hole;
s5, forming a second thin n on the upper part of the n-doped GaP layer at the transverse free end of the LED light source by using an ion implantation process + And the trap is used for limiting the ion implantation area by using a mask plate in the process.
As a further definition, the fourth step includes the following steps performed in order:
a1, magnetron sputtering is adopted in the first electrode through hole, the second electrode through hole and P respectively + GaAs (gallium arsenide) 1-X P X Upper surface of constant composition layer, second thin n + Respectively manufacturing aluminum electrodes on the upper surfaces of the wells, and then etching redundant aluminum metal to form a silicon photodetector cathode, a silicon photodetector anode, a light source anode and a light source cathode;
a2, carrying out low-temperature annealing to enable the silicon light detector anode, the silicon light detector cathode, the light source anode and the light source cathode to form ohmic contact with the corresponding positions respectively.
An integrated circuit of a single-chip LED photoelectric coupler comprises the single-chip LED photoelectric coupler and a back-end circuit which are integrated on a second substrate;
the second substrate is n － A silicon substrate;
the second substrate is provided with a first big island and a second big island which are formed by an ion implantation process, a second deep P well formed by the ion implantation process and a first high depth-to-width ratio P connected with the second deep P well ＋ Well and second high aspect ratio P ＋ Enclosing the wells;
the back-end circuit is positioned on the first island, and the single-chip LED photoelectric coupler is positioned on the second island;
the first large island is injected with a third deep P well and third to seventh high depth-to-width P wells connected with the third deep P well, the third high depth-to-width P well and the fourth high depth-to-width P well are connected to form a first small island, the third deep P well, the fourth high depth-to-width P well and the fifth high depth-to-width P well are connected to form a second small island, the third deep P well, the fifth high depth-to-width P well and the sixth high depth-to-width P well are connected to form a third small island, and the third deep P well, the sixth high depth-to-width P well and the seventh high depth-to-width P well are connected to form a fourth small island;
the first island is provided with a capacitor, the second island is provided with an NPN transistor, the third island is provided with a PNP transistor, the fourth island is provided with a resistor, and the capacitor, the NPN transistor, the PNP transistor and the resistor are electrically connected with each other to form a back-end circuit;
the upper surface of the first island is covered with a second dielectric layer, and the second dielectric layer and the first dielectric layer contained in the single-chip LED photoelectric coupler are integrally formed to form a dielectric layer of the whole integrated circuit;
the power electrode, the output electrode and the ground electrode of the rear-end circuit are LED out from the upper part of the first island, the light source positive electrode and the light source negative electrode of the single-chip LED photoelectric coupler are LED out from the upper part of the second island, the silicon photodetector positive electrode of the single-chip LED photoelectric coupler is connected with the input electrode of the rear-end circuit, and the silicon photodetector negative electrode of the single-chip LED photoelectric coupler is connected with the ground electrode of the rear-end circuit.
As a limitation: the dielectric layer adopts SiO 2 And isolating the dielectric layer.
A method for manufacturing an integrated circuit of a single-chip LED photoelectric coupler is used for manufacturing the integrated circuit of the single-chip LED photoelectric coupler, and comprises the following steps of:
(one) select n - The doped silicon wafer is used as a second substrate, and an ion implantation process is used by means of a mask plate, and a second deep P well and a first high depth-to-width ratio P are sequentially completed on the second substrate ＋ Well and second high aspect ratio P ＋ The manufacturing of the well, a first big island and a second big island are formed; then completing the manufacture of a third deep P well and third to seventh high depth-to-width ratio P wells in the first large island to form first to fourth small islands; then completing the manufacture of the first deep P well, the first high depth-to-width ratio P well and the second high depth-to-width ratio P well in the second large island to form a first island, and finally completing the first thin n on the upper part of the first island + Manufacturing a trap;
secondly, using a mask plate, and adopting an ion implantation process to correspondingly manufacture a capacitor, an NPN transistor, a PNP transistor and a resistor in the first island to the fourth island respectively;
thirdly, a dielectric layer is grown on the upper surface of the second substrate by adopting a low-pressure chemical vapor deposition method so as to play a role in electrical isolation;
fourthly, completing the manufacture of other parts of the single-chip LED photoelectric coupler above the second island according to the same process as the third and fourth steps;
etching the regions of the second dielectric layer above the first island to the fourth island by adopting an inductively coupled plasma etching process to respectively form electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor;
manufacturing aluminum electrodes in electrode through holes of the capacitor, the NPN transistor, the PNP transistor and the resistor by magnetron sputtering, etching redundant aluminum metal, and completing electric connection among the capacitor, the NPN transistor, the PNP transistor and the resistor to form a back-end circuit; finally, the electric connection between the positive electrode of the silicon photodetector of the single-chip LED photoelectric coupler and the input electrode of the back-end circuit and the electric connection between the negative electrode of the silicon photodetector of the single-chip LED photoelectric coupler and the ground electrode of the back-end circuit are completed;
a power electrode, an output electrode and a ground electrode of a rear-end circuit are LED out from the upper part of the first island, and a light source positive electrode and a light source negative electrode of a single-chip LED photoelectric coupler are LED out from the upper part of the second island;
and (eighth) carrying out low-temperature annealing to enable all metal electrodes contained in the single-chip LED photoelectric coupler and the back-end circuit to form ohmic contact with the corresponding positions respectively.
Compared with the prior art, the technical proposal adopted by the invention has the following technical progress:
(1) Compared with the traditional photoelectric coupler with a planar structure manufactured by using a dispensing process or the photoelectric coupler with an axial structure manufactured by using the single-chip LED photoelectric coupler, the light source detector and the LED light source are manufactured on the same substrate, the LED photoelectric coupler has the advantages that the light source and the light detector are required to be electrically welded, the integration level of the device is high, the packaging size is reduced, and the manufacturing difficulty and cost are reduced;
(2) The single-chip LED photoelectric coupler can be integrated with a circuit on the same substrate, and the LED light source and the light detector are axially stacked, so that the manufacturing cost is further reduced, and the single-chip LED photoelectric coupler has higher integration level;
(3) The p-n solid luminescence of GaAsP material is utilized, the total reflection effect of the top metal electrode of the LED light source on light can limit the light propagation direction, and the loss in the light transmission process is reduced;
(4) The LED light source of the GaAsP material is provided with Al 2 O 3 Buffer layer for GaP and SiO 2 Lattice matching between with a layer of GaAs 1-X P X The component gradual change layer is used for lattice matching between the GaAsP layer and the GaP layer with constant components, and the design improves the reliability of the device;
(5) N-type GaAs of the LED light source of the invention 1-X P X Nitrogen element is used as doping impurity in the constant component layer to improve luminous efficiency;
(6) The wavelength range which can be detected by the photodetector manufactured by using the silicon material as the substrate is between 400nm and 1000nm, which is very consistent with the spectrum range of the LED, and the performance of the device is improved.
The invention is suitable for the technical field of integration of photoelectric couplers.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
In the drawings:
FIG. 1 is a schematic overall structure of embodiment 1 of the present invention;
FIG. 2 is a schematic overall structure of embodiment 3 of the present invention;
FIG. 3 is a circuit diagram of embodiment 3 of the present invention;
fig. 4 is a circuit diagram of a back-end circuit according to embodiment 3 of the present invention.
In the figure: 1. first substrate, 2, first deep P-well3, a first high depth-to-width ratio P well, 4, a second high depth-to-width ratio P well, 5, a first thin n + Trap, 6, pin photodiode cathode, 7, pin photodiode anode, 8, first dielectric layer, 9, al 2 O 3 Buffer layer, 10, n-type GaP layer, 11, n-type GaAs 1-X P X Composition graded layer, 12, n-type GaAs 1-X P X Constant composition layer, 13, P + GaAs (gallium arsenide) 1- X P X A constant composition layer 14, a light source positive electrode 15, a light source negative electrode 17, a second substrate 18, a second deep P well 19, a first high aspect ratio P ＋ Well, 20, second high aspect ratio P ＋ Well, 21, third deep P well, 22, third high depth-width P well, 23, fourth high depth-width P well, 24, fifth high depth-width P well, 25, sixth high depth-width P well, 26, seventh high depth-width P well, 27, dielectric layer, 28, and pre-amplifying circuit.
Detailed Description
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are presented for purposes of illustration and explanation only and are not intended to limit the present invention.
Embodiment 1A Single chip LED photocoupler
As shown in fig. 1, this embodiment includes a silicon photodetector, a first dielectric layer 8, and an LED light source arranged in a bottom-up axial stack. Wherein the silicon photodetector is fabricated in a first substrate 1 using a complementary metal oxide semiconductor process, the first substrate 1 being an i-type silicon substrate, i-type i.e. n - And (3) light doping type. The silicon photodetector is a pin photodiode, avalanche photodiode, phototransistor, or other silicon photodetector.
The silicon photodetector of this embodiment is illustrated by taking a pin photodiode as an example, as shown in fig. 1, a first deep P-well 2, a first high-aspect-ratio P-well 3 and a second high-aspect-ratio P-well 4 connected with the first deep P-well 2 are implanted into a first substrate 1, the first deep P-well 2, the first high-aspect-ratio P-well 3 and the second high-aspect-ratio P-well 4 are connected to form a first island, and a first thin n is embedded in the upper portion of the first island + Well 5, pin photodiode cathode 6 leads out from first high aspect ratio P well 3, pin photoelectricThe diode anode 7 is formed from a first thin n + The well 5 is led out.
The first dielectric layer 8 in this embodiment is formed of SiO with a thickness of 300nm to 500nm 2 And the isolation medium layer is used for realizing electrical isolation between the pin photodiode and the LED light source. As shown in fig. 1, the first dielectric layer 8 covers all areas on the upper surface of the pin photodiode except the pin photodiode anode 6 and the pin photodiode cathode 7.
The first dielectric layer 8 is provided with a layer of Al with the thickness of 10 nm-50 nm which is grown by adopting an Atomic Layer Deposition (ALD) process 2 O 3 Buffer layer 9, LED light source is positioned at Al 2 O 3 Above the buffer layer 9. The LED light source is L-shaped and comprises an n-type GaP layer 10 and an n-type GaAs which are sequentially grown from bottom to top 1-X P X Composition graded layer 11, n-type GaAs 1-X P X Constant composition layers 12 and P + GaAs (gallium arsenide) 1-X P X A constant composition layer 13; n-type GaAs 1-X P X Composition graded layer 11, n-type GaAs 1-X P X Constant composition layers 12 and P + GaAs (gallium arsenide) 1-X P X The constant composition layer 13 has the same width, and the n-type GaP layer 10 has a width larger than GaAs 1-X P X Width of the compositionally graded layer. n-type GaAs 1-X P X The impurity doping of the constant composition layer 12 is nitrogen, and nitrogen doping can improve the luminous efficiency. Assume n-type GaAs 1-X P X X=x in constant composition layer 12 0 ,X 0 ∈[0.55,0.7]N-type GaAs 1-X P X The X in the composition graded layer 11 is reduced from 1 to X from bottom to top 0 。
At P + GaAs (gallium arsenide) 1-X P X The top of the constant component layer 13 is covered with a light source anode 14, which can limit the propagation direction of light and reduce the loss of light in the propagation process
A second thin n is injected into the upper part of the n-type GaP layer 10 at the lateral free end of the LED light source + Well from the second thin n + The well leads out of the light source cathode 15.
Embodiment 2A method for manufacturing a single-chip LED photoelectric coupler
This example was used to make example 1, in the following sequence of steps:
1. by n - The doped silicon wafer is used as a first substrate 1, an ion implantation process is used, firstly, the manufacture of a first deep P-well 2, a first high-depth-width-ratio P-well 3 and a second high-depth-width-ratio P-well 4 is sequentially completed on the first substrate 1 to form a first island, and then a first thin n-type semiconductor device is completed on the upper part of the first island + Manufacturing a well 5;
2. SiO with thickness of 300 nm-500 nm is grown on the first substrate 1 by adopting a low-pressure chemical vapor deposition method 2 The isolation dielectric layer is used as a first dielectric layer 8 to play a role of electrical isolation;
3. an Al layer with the thickness of 10 nm-50 nm is grown above the first dielectric layer 8 by utilizing an atomic layer deposition process 2 O 3 A buffer layer 9;
the fabrication of the LED light source is then completed on the first dielectric layer 8 by liquid phase epitaxy, which process comprises the steps of,
s1, using liquid phase epitaxy, first in Al 2 O 3 An n-type doped GaP layer 10 is grown on the buffer layer 9, and then n-type GaAs is sequentially epitaxially grown on the n-type GaP layer 10 1-X P X Composition graded layer 11, n-type GaAs 1-X P X Constant composition layer 12 and p + GaAs (gallium arsenide) 1-X P X A constant composition layer 13;
s2, adopting an inductively coupled plasma etching process to carry out n-type GaAs 1-X P X Composition graded layer 11, n-type GaAs 1-X P X Constant composition layer 12 and p + GaAs (gallium arsenide) 1-X P X Etching the side of the constant component layer 13 above the second high aspect ratio P-well 4 until the n-type doped GaP layer 10 is exposed, so as to form a transverse free end of the LED light source;
s3, adopting an inductively coupled plasma etching process to carry out n-type GaAs 1-X P X Composition graded layer 11, n-type GaAs 1-X P X Constant composition layer 12, p+ GaAs 1-X P X Etching the constant component layer 13 and the side of the n-type doped GaP layer 10 above the first high aspect ratio P well 3 until the first dielectric layer 8 is exposed;
s4, collectingThe inductively coupled plasma etching process is used for respectively carrying out the etching on the first high depth-to-width ratio P well 3 and the first thin n + Etching the first dielectric layer 8 above the well 5 to form a first electrode through hole and a second electrode through hole;
s5, forming a second thin n on the upper part of the n-doped GaP layer 10 at the transverse free end of the LED light source by using an ion implantation process + A trap limiting the ion implantation region by using a mask plate in the process;
4. magnetron sputtering is adopted in the first electrode through hole, the second electrode through hole and P respectively + GaAs (gallium arsenide) 1-X P X Surface of constant composition layer 13, second thin n + Respectively manufacturing aluminum electrodes on the surfaces of the wells, and then etching redundant aluminum metal to form a pin photodiode cathode 6, a pin photodiode anode 7, a light source anode 14 and a light source cathode 15;
5. the low-temperature annealing is performed to form ohmic contacts to the pin photodiode anode 6, pin photodiode cathode 7, light source anode 14, and light source cathode 15, respectively, at the corresponding positions.
Embodiment 3 an Integrated Circuit of a Single-chip LED optocoupler
As shown in fig. 2, the present embodiment includes a single-chip LED photocoupler and back-end circuitry integrated on the second substrate 17.
The second substrate 17 is n － A silicon substrate; a second deep P-well 18 formed by ion implantation process in the second substrate 17 and a first high aspect ratio P connected to the second deep P-well 18 ＋ Well 19 and second high aspect ratio P ＋ Well 20, second deep P-well 18 and first high aspect ratio P ＋ Well 19, second high aspect ratio P ＋ The wells 20 are connected to form a first large island and a second large island. The back-end circuit is located in a first island, and the single-chip LED photocoupler is located in a second island.
The first island is implanted with a third deep P well 21 and third to seventh high depth-to-width P wells 22 to 26 connected with the third deep P well 21, the third deep P well 21 is connected with the third high depth-to-width P well 22 and the fourth high depth-to-width P well 23 to form a first island, the third deep P well 21 is connected with the fourth high depth-to-width P well 23 and the fifth high depth-to-width P well 24 to form a second island, the third deep P well 21 is connected with the fifth high depth-to-width P well 24 and the sixth high depth-to-width P well 25 to form a third island, and the third deep P well 21 is connected with the sixth high depth-to-width P well 25 and the seventh high depth-to-width P well 26 to form a fourth island. The first island is provided with a capacitor, the second island is provided with an NPN transistor, the third island is provided with a PNP transistor, the fourth island is provided with a resistor, and the capacitor, the NPN transistor, the PNP transistor and the resistor are electrically connected with each other to form a back-end circuit. The numbers, parameters and the connection modes of the resistors, the capacitors, the NPN transistors, the PNP transistors and the resistors in the four islands are determined according to actual needs.
The structure of the single-chip LED photocoupler in this embodiment is the same as that of embodiment 1, and description thereof will not be repeated.
The upper surface of the first island is covered with a second dielectric layer, the second dielectric layer and a first dielectric layer 8 contained in the single-chip LED photoelectric coupler are integrally formed to form a dielectric layer 27 of the whole integrated circuit, and the dielectric layer 27 is made of the same material as the first dielectric layer 8.
The power electrode Vcc, the output electrode Vout and the ground electrode GND of the back-end circuit are led out from the upper part of the first island, the positive electrode 7 of the pin photodiode is connected with the input electrode Vin of the back-end circuit, and the negative electrode 6 of the pin photodiode is connected with the ground electrode GND of the back-end circuit.
Referring to fig. 3, one way of connecting the single-chip LED optocoupler to the back-end circuit, which is a pre-amplifier circuit 28, is shown. The LED light source works under the forward bias condition, the pin photodiode works under the zero bias condition, two ends of the pin photodiode are respectively connected to two input ports of the pre-amplifying circuit 28, and the pin photodiode works under the zero bias condition in a photovoltaic mode, similar to a solar battery, and has the advantages of small dark current and good photoelectric conversion linearity.
As shown in fig. 4, a structure of the pre-amplifier circuit 28 is shown, in which the pre-amplifier circuit 28 is a three-stage amplifier circuit, and is composed of a differential amplifier circuit with a double-ended input and a single-ended output, a common-shot amplifier circuit, and a complementary output circuit.
Embodiment 4A method for manufacturing an Integrated Circuit of a Single-chip LED photo coupler
This example was used to make example 3, performed in the following sequence of steps:
(one) select n - The doped silicon wafer is used as a second substrate 17, and the second deep P well 18 and the first high aspect ratio P are sequentially completed on the second substrate 17 by using an ion implantation process through a mask plate ＋ Well 19 and second high aspect ratio P ＋ The manufacture of the well 20, forming a first large island and a second large island; then completing the manufacture of a third deep P well 21 and third to seventh high aspect ratio P wells 22 to 26 in the first large island to form first to fourth small islands; then the first deep P well 2, the first high depth-to-width P well 3 and the second high depth-to-width P well 4 are manufactured in the second large island to form a first island, and finally the first thin n is manufactured at the upper part of the first island + Manufacturing a well 5;
secondly, respectively manufacturing a capacitor, an NPN transistor, a PNP transistor and a resistor in the first island to the fourth island by using a proper mask plate and adopting an ion implantation process;
(III) growing SiO with thickness of 300-500 nm on the upper surface of the second substrate 17 by low pressure chemical vapor deposition 2 The isolation medium forms a dielectric layer 27 to serve as an electrical isolation;
(IV) completing the manufacture of other parts of the single-chip LED photocoupler above the second island according to the same process as the third and fourth steps in the embodiment 2;
fifthly, etching the regions of the second dielectric layer 27 above the first island to the fourth island by adopting an inductively coupled plasma etching process to respectively form electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor;
manufacturing aluminum electrodes in electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor by magnetron sputtering, etching redundant aluminum metal, completing electric connection among the capacitor, the NPN transistor, the PNP transistor and the resistor to form a back-end circuit, and finally completing electric connection between a silicon photodetector anode of a single-chip LED photoelectric coupler and an input electrode of the back-end circuit and electric connection between a silicon photodetector cathode of the single-chip LED photoelectric coupler and a ground electrode of the back-end circuit to form a circuit connection relation shown in figures 3 and 4;
(seventh) a power supply electrode Vcc, an output electrode Vout and a ground electrode GND of the back-end circuit are led out from above the first island; a light source positive electrode 14 and a light source negative electrode 15 of the single-chip LED photoelectric coupler are LED out from the upper part of the second island;
and (eighth) carrying out low-temperature annealing to enable all metal electrodes of the single-chip LED photoelectric coupler and the back-end circuit to form ohmic contact with the corresponding positions respectively.
Claims (8)
1. A single chip LED photoelectric coupler is characterized in that: the LED light source comprises a silicon photodetector, a first dielectric layer and an LED light source which are axially arranged from bottom to top and are manufactured on a first substrate;
the first substrate is filled with a first deep P well, a first high depth-to-width P well and a second high depth-to-width P well which are connected with the first deep P well, the first high depth-to-width P well and the second high depth-to-width P well are connected to form a first island, and a first thin n is embedded at the upper part of the first island + A well;
the positive electrode of the silicon photodetector is formed from a first thin n + The well is led out, and the negative electrode of the silicon photodetector is led out from the P well with the first high depth-to-width ratio;
the first substrate is n － A silicon substrate;
al grows between the LED light source and the first dielectric layer 2 O 3 Buffer layer, al 2 O 3 The thickness of the buffer layer is 10 nm-50 nm;
the LED light source is L-shaped and comprises an n-type GaP layer and an n-type GaAs which are sequentially grown from bottom to top 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and P + GaAs (gallium arsenide) 1-X P X Constant composition layer, n-type GaAs 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and P + GaAs (gallium arsenide) 1-X P X The constant composition layer has the same width, and the n-type GaP layer has a width larger than that of GaAs 1- X P X The width of the composition graded layer;
the P is + GaAs (gallium arsenide) 1-X P X A light source positive electrode is arranged on the constant component layer, and a second thin n is injected at the transverse free end of the LED light source and the upper part of the n-type GaP layer + Well from the second thin n + The trap leads out the negative electrode of the light source;
the n-type GaAs 1-X P X Constant composition layer, P + GaAs (gallium arsenide) 1-X P X X=x in constant component layer 0 ,X 0 ∈[0.55,0.7]N-type GaAs 1-X P X The X in the composition gradual change layer is reduced from 1 to X from bottom to top 0 。
2. The method for manufacturing the single-chip LED photocoupler according to claim 1, comprising the following steps in sequence:
1. by n - The doped silicon wafer is used as a first substrate, an ion implantation process is used by means of a mask, firstly, the manufacture of a first deep P well, a first high-depth-width-ratio P well and a second high-depth-width-ratio P well is sequentially completed on the first substrate to form a first island, and then a first thin n is completed on the upper part of the first island + Manufacturing a trap;
2. a first dielectric layer grows on the upper surface of the first substrate by adopting a low-pressure chemical vapor deposition method;
3. manufacturing an LED light source on the first dielectric layer by utilizing liquid phase epitaxy;
4. and manufacturing a silicon light detector anode, a silicon light detector cathode, a light source anode and a light source cathode by adopting magnetron sputtering.
3. The method for manufacturing the single-chip LED optocoupler of claim 2, wherein: after the step two is completed and before the step three is carried out, an Al layer with the thickness of 10nm to 50nm is grown above the first dielectric layer by utilizing an atomic layer deposition process 2 O 3 And a buffer layer.
4. The method for manufacturing a single-chip LED optocoupler of claim 3, wherein the third step comprises the following steps performed in order:
s1, utilizing a liquid phase epitaxy technology, firstly, performing a process of preparing a silicon nitride film on Al 2 O 3 Epitaxially growing an n-type GaP layer on the buffer layer, and sequentially epitaxially growing n-type GaAs on the n-type GaP layer 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and p + GaAs (gallium arsenide) 1-X P X A constant composition layer;
s2, adopting an inductively coupled plasma etching process to carry out n-type GaAs 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layer and p + GaAs (gallium arsenide) 1-X P X Etching one side of the constant component layer above the second high aspect ratio P well until the n-type GaP layer is exposed, so as to form a transverse free end of the LED light source;
s3, adopting an inductively coupled plasma etching process to carry out n-type GaAs 1-X P X Composition graded layer, n-type GaAs 1-X P X Constant composition layered, p+ GaAs 1-X P X Etching one side of the constant component layer and the n-type GaP layer, which is positioned above the first high depth-to-width ratio P well, until the first dielectric layer is exposed;
s4, adopting an inductively coupled plasma etching process to respectively etch the first high depth-to-width ratio P well and the first thin n + Etching the first dielectric layer above the well to form a first electrode through hole and a second electrode through hole;
s5, forming a second thin n on the upper part of the n-doped GaP layer at the transverse free end of the LED light source by using an ion implantation process + And the trap is used for limiting the ion implantation area by using a mask plate in the process.
5. The method for manufacturing a single-chip LED optocoupler of claim 4, wherein the fourth step comprises the following steps performed in order:
a1, magnetron sputtering is adopted in the first electrode through hole, the second electrode through hole and P respectively + GaAs (gallium arsenide) 1-X P X Upper surface of constant composition layer, second thin n + Upper table of wellsRespectively manufacturing aluminum electrodes on the surfaces, and then etching redundant aluminum metal to form a silicon light detector cathode, a silicon light detector anode, a light source anode and a light source cathode;
a2, carrying out low-temperature annealing to enable the silicon light detector anode, the silicon light detector cathode, the light source anode and the light source cathode to form ohmic contact with the corresponding positions respectively.
6. The integrated circuit of the single-chip LED optocoupler of claim 1, wherein: the LED module comprises a single-chip LED photoelectric coupler and a back-end circuit which are integrated on a second substrate;
the second substrate is n － A silicon substrate;
the second substrate is provided with a first big island and a second big island which are formed by an ion implantation process, a second deep P well formed by the ion implantation process and a first high depth-to-width ratio P connected with the second deep P well ＋ Well and second high aspect ratio P ＋ Enclosing the wells;
the back-end circuit is positioned on the first island, and the single-chip LED photoelectric coupler is positioned on the second island;
the first large island is injected with a third deep P well and third to seventh high depth-to-width P wells connected with the third deep P well, the third high depth-to-width P well and the fourth high depth-to-width P well are connected to form a first small island, the third deep P well, the fourth high depth-to-width P well and the fifth high depth-to-width P well are connected to form a second small island, the third deep P well, the fifth high depth-to-width P well and the sixth high depth-to-width P well are connected to form a third small island, and the third deep P well, the sixth high depth-to-width P well and the seventh high depth-to-width P well are connected to form a fourth small island;
the first island is provided with a capacitor, the second island is provided with an NPN transistor, the third island is provided with a PNP transistor, the fourth island is provided with a resistor, and the capacitor, the NPN transistor, the PNP transistor and the resistor are electrically connected with each other to form a back-end circuit;
the upper surface of the first island is covered with a second dielectric layer, and the second dielectric layer and the first dielectric layer contained in the single-chip LED photoelectric coupler are integrally formed to form a dielectric layer of the whole integrated circuit;
the power electrode, the output electrode and the ground electrode of the rear-end circuit are LED out from the upper part of the first island, the light source positive electrode and the light source negative electrode of the single-chip LED photoelectric coupler are LED out from the upper part of the second island, and the silicon photodetector negative electrode of the single-chip LED photoelectric coupler is connected with the ground electrode of the rear-end circuit.
7. The integrated circuit of the single-chip LED optocoupler of claim 6, wherein: the dielectric layer adopts SiO 2 And isolating the dielectric layer.
8. The method for manufacturing the integrated circuit of the single-chip LED photocoupler according to claim 6, comprising the following steps performed in sequence:
(one) select n - The doped silicon wafer is used as a second substrate, and an ion implantation process is used by means of a mask plate, and a second deep P well and a first high depth-to-width ratio P are sequentially completed on the second substrate ＋ Well and second high aspect ratio P ＋ The manufacturing of the well, a first big island and a second big island are formed; then completing the manufacture of a third deep P well and third to seventh high depth-to-width ratio P wells in the first large island to form first to fourth small islands; then completing the manufacture of the first deep P well, the first high depth-to-width ratio P well and the second high depth-to-width ratio P well in the second large island to form a first island, and finally completing the first thin n on the upper part of the first island + Manufacturing a trap;
secondly, using a mask plate, and adopting an ion implantation process to correspondingly manufacture a capacitor, an NPN transistor, a PNP transistor and a resistor in the first island to the fourth island respectively;
thirdly, a dielectric layer is grown on the upper surface of the second substrate by adopting a low-pressure chemical vapor deposition method so as to play a role in electrical isolation;
fourthly, completing the manufacture of other parts of the single-chip LED photoelectric coupler above the second island according to the same process as the third and fourth steps;
etching the regions of the second dielectric layer above the first island to the fourth island by adopting an inductively coupled plasma etching process to respectively form electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor;
manufacturing aluminum electrodes in electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor by magnetron sputtering, etching redundant aluminum metal, completing electric connection among the capacitor, the NPN transistor, the PNP transistor and the resistor to form a back-end circuit, and finally completing electric connection between a silicon photodetector anode of a single-chip LED photoelectric coupler and an input electrode of the back-end circuit and electric connection between a silicon photodetector cathode of the single-chip LED photoelectric coupler and a ground electrode of the back-end circuit;
a power electrode, an output electrode and a ground electrode of a rear-end circuit are LED out from the upper part of the first island, and a light source positive electrode and a light source negative electrode of a single-chip LED photoelectric coupler are LED out from the upper part of the second island;
and (eighth) carrying out low-temperature annealing to enable all metal electrodes contained in the single-chip LED photoelectric coupler and the back-end circuit to form ohmic contact with the corresponding positions respectively.
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