CN110518087A - A kind of single-chip LED light electric coupler, its integrated circuit and production method - Google Patents
A kind of single-chip LED light electric coupler, its integrated circuit and production method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 43
- 238000005516 engineering process Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 230000026267 regulation of growth Effects 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 5
- 238000004026 adhesive bonding Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000003321 amplification Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006854 communication Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- 239000012071 phase Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention discloses a kind of single-chip LED light electric couplers, silicon optical detector, first medium layer and LED light source including using the axial arranging from bottom to top of integrated circuit technology production on the first substrate.The invention also discloses the production methods of above-mentioned single-chip LED light electric coupler.The present invention further discloses a kind of integrated circuits and preparation method thereof of single-chip LED light electric coupler.Ray detector of the invention and LED light source production are on the same substrate, it needs to be welded light source and optical detector compared to traditional photoelectrical coupler using gluing process production planar structure or when making the photoelectrical coupler of axial arrangement, its device integration is high, package dimension reduces, and reduces manufacture difficulty and cost.Single-chip LED light electric coupler of the invention can further decrease cost of manufacture, improve the integrated level of circuit with circuit integration on the same substrate, the integrated technology field suitable for photoelectrical coupler.
Description
Technical field
The invention belongs to semiconductor light electro-technical field, it is related to a kind of single-chip LED light electric coupler, specifically one
Kind single-chip LED light electric coupler, its integrated circuit and production method.
Background technique
Photoelectrical coupler is a kind of important photoelectric device, can be made from a circuit sending signal to another circuit
It uses up and replaces conducting wire, convert electrical signals to optical signal using light emitting diode (LED) and optical detector is recycled to receive optical signal
And convert thereof into electric signal.Photoelectrical coupler has many advantages, such as strong antijamming capability, good reliability, electric isolation, answers extensively
For in the circuits such as logic switch, digital-to-analogue conversion.
With the development of electronics and information industry, electronic device terminal is towards miniaturization, integrated development, this is to photoelectricity coupling
Higher requirements are also raised for clutch, it is desirable that it has smaller volume and higher integrated level.Traditional photoelectrical coupler will
The LED of one GaAsP material is packaged together with an optical detector, places two kinds of devices using planar structure or axial arrangement
Part.It is needed using planar structure production photoelectrical coupler using gluing process；It is needed using axial arrangement to light source and optical detection
Device is welded.With the reduction of package dimension, dispensing is more difficult with spot-welding technology, and manufacture difficulty increases, cost of manufacture is special
It is high.
From the viewpoint of cost and current densities, photoelectrical coupler is optimal be achieved in that photoelectrical coupler is embedding
Enter into silicon chip, not only reduce cost of manufacture, while the integrated level of circuit can be improved.
Summary of the invention
The object of the present invention is to provide a kind of single-chip LED light electric couplers, and LED light source and optical detector are produced on together
On one substrate, the integrated level of photoelectrical coupler is not only increased, it can also be by single-chip LED light electric coupler and circuit integration
On the same substrate to further increase the integrated level of entire circuit, reduce the production cost simultaneously.
The production method that another object of the present invention is to provide above-mentioned single-chip LED light electric coupler.
Third object of the present invention is to provide a kind of integrated circuits comprising above-mentioned single-chip LED light electric coupler.
It is a still further object of the present invention to provide the production methods of said integrated circuit.
To achieve the above object, used technical solution is as follows by the present invention:
A kind of single-chip LED light electric coupler, the silicon optical detection including making axial arranging from bottom to top on the first substrate
Device, first medium layer and LED light source；
The first deep p-well and the first high-aspect-ratio p-well being connected with the first deep p-well and second high are injected in first substrate
Depth-to-width ratio p-well, the first deep p-well, the first high-aspect-ratio p-well and the second high-aspect-ratio p-well are connected to form the first island, the first island it is upper
Portion is embedded with the first thin n+Trap；
Silicon optical detector anode is from the first thin n+Trap is drawn, silicon optical detector cathode is drawn from the first high-aspect-ratio p-well；
First substrate is nType silicon substrate.
As restriction: growth has Al between the LED light source and first medium layer2O3Buffer layer；
The LED light source is L-shaped, including from bottom to top successively grow made of GaP layers of N-shaped, N-shaped GaAs1-XPXContent gradually variational
Layer, N-shaped GaAs1-XPXConstant composition layer and P+Type GaAs1-XPXConstant composition layer, N-shaped GaAs1-XPXContent gradually variational layer, N-shaped
GaAs1-XPXConstant composition layer and P+Type GaAs1-XPXConstant composition layer it is of same size, the width that GaP layers of N-shaped be greater than GaAs1- XPXThe width of content gradually variational layer；
The P+Type GaAs1-XPXProduction has light source anode, laterally free end, N-shaped GaP in LED light source on constant composition layer
The top of layer is injected with the second thin n+Trap, from the second thin n+Trap draws light source cathode；
The N-shaped GaAs1-XPXConstant composition layer, P+Type GaAs1-XPXX=X in constant composition layer0,X0∈ [0.55,0.7], n
Type GaAs1-XPXX is bottom-up in content gradually variational layer is reduced to X by 10。
A kind of production method of single-chip LED light electric coupler, for making above-mentioned single-chip LED light electric coupler,
This method includes the following steps successively carried out:
One, n is used-The Silicon Wafer of doping is as the first substrate, by mask plate, using ion implantation technology, first in the first lining
It is sequentially completed the production of the first deep p-well, the first high-aspect-ratio p-well, the second high-aspect-ratio p-well on bottom, forms the first island, then exists
Complete the first thin n in the top on the first island+The production of trap；
Two, using low-pressure chemical vapour deposition technique the first substrate one dielectric layer of upper surface growth regulation；
Three, the production of LED light source is completed on first medium layer using liquid phase epitaxy；
Four, the production of silicon optical detector anode, silicon optical detector cathode, light source anode, light source cathode is completed using magnetron sputtering.
As restriction: after completion step 2, before carrying out step 3, using atomic layer deposition processes in first medium layer
Top grows the Al of one layer of 10nm ~ 50nm thickness2O3Buffer layer.
As further limiting, the step 3 includes the following steps successively carried out:
S1, using liquid phase epitaxy technology, first in Al2O3GaP layers of N-shaped of one layer of epitaxial growth on buffer layer, later in N-shaped GaP
Successively epitaxial growth N-shaped GaAs on layer1-XPXContent gradually variational layer, N-shaped GaAs1-XPXConstant composition layer and p+Type GaAs1-XPXIt is constant
Component layers；
S2, using sense coupling technique to N-shaped GaAs1-XPXContent gradually variational layer, N-shaped GaAs1-XPXConstant group
Layering and p+Type GaAs1-XPXThe side of constant composition layer being located above the second high-aspect-ratio p-well performs etching until exposing n
GaP layers of type, so far form the laterally free end of LED light source；
S3, using sense coupling technique to N-shaped GaAs1-XPXContent gradually variational layer, N-shaped GaAs1-XPXConstant group
Layering, p+ type GaAs1-XPXConstant composition layer and GaP layers of N-shaped of the side being located above the first high-aspect-ratio p-well perform etching,
Until exposing first medium layer；
S4, using sense coupling technique respectively to the first high-aspect-ratio p-well, the first thin n+The of the top of trap
One dielectric layer performs etching, and forms first electrode through-hole and second electrode through-hole；
S5, the second thin n is formed on the laterally free end of LED light source, GaP layers of n-type doping of top using ion implantation technology+
Trap utilizes the region of mask plate limitation ion implanting in the process.
It is limited as further, the step 4 includes the following steps successively carried out:
A1, using magnetron sputtering respectively in first electrode through-hole, in second electrode through-hole, P+Type GaAs1-XPXConstant composition layer
Upper surface, the second thin n+The upper surface of trap makes aluminium electrode respectively, then etches away extra aluminum metal, forms silicon optical detection
Device cathode, silicon optical detector anode, light source anode and light source cathode；
A2, carry out low-temperature annealing, make silicon optical detector anode, silicon optical detector cathode, light source anode and light source cathode with it is respective
Corresponding position is respectively formed Ohmic contact.
A kind of integrated circuit of single-chip LED light electric coupler, including the single-chip LED photovoltaic being integrated on the second substrate
Coupler and back-end circuit；
Second substrate is nType silicon substrate；
There are the first big island and the second largest island formed by ion implantation technology, the first big island and the second largest island in second substrate
The the second deep p-well formed by ion implantation technology and the first high-aspect-ratio P being connected with the second deep p-well+Trap and the second profundity
Width ratio P+Trap surrounds；
The back-end circuit is located at the first big island, and single-chip LED light electric coupler is located at the second largest island；
The first big island is injected with third depth p-well and the third being connected with third depth p-well~the 7th high-aspect-ratio p-well, the
Three deep p-wells, third high-aspect-ratio p-well and the 4th high-aspect-ratio p-well are connected to form the first island, third depth p-well, the 4th advanced width
It is connected to form the second island than p-well and the 5th high-aspect-ratio p-well, third depth p-well, the 5th high-aspect-ratio p-well and the 6th are advanced wide
It is connected to form third island than p-well, third depth p-well, the 6th high-aspect-ratio p-well and the 7th high-aspect-ratio p-well are connected to form the 4th
Island；
Production has capacitor in first island, and production has NPN transistor in the second island, and production has PNP brilliant in third island
Body pipe, production has resistance in the 4th island, the capacitor, NPN transistor, PNP transistor and resistance are electrically connected to each other to be formed after
Terminal circuit；
First upper surface great Dao is covered with second dielectric layer, second dielectric layer and single-chip LED light electric coupler included the
One dielectric layer is integrally formed the dielectric layer to form entire integrated circuit；
Power electrode, output electrode and the ground electrode that back-end circuit is drawn above the first big island, draw above the second largest island
The light source positive electrode and light source negative electrode of single-chip LED light electric coupler, the silicon optical detector of single-chip LED light electric coupler is just
Pole is connected with the input electrode of back-end circuit, the silicon optical detector cathode of single-chip LED light electric coupler and the ground of back-end circuit
Electrode is connected.
As restriction: the dielectric layer uses SiO2Spacer medium layer.
A kind of production method of the integrated circuit of single-chip LED light electric coupler, for making above-mentioned single-chip LED light
The integrated circuit of electric coupler, this method include the following steps successively carried out:
(1) n is selected-The Silicon Wafer of doping is as the second substrate, by mask plate, using ion implantation technology, first second
The second deep p-well, the first high-aspect-ratio P is sequentially completed on substrate+Trap and the second high-aspect-ratio P+The production of trap, the first of formation are big
Island and the second largest island；Then third depth p-well, the production of third~the 7th high-aspect-ratio p-well are completed in the first big island, form the
One~the 4th island；Then the first deep p-well, the system of the first high-aspect-ratio p-well and the second high-aspect-ratio p-well is completed on the second largest island
Make, form the first island, finally completes the first thin n on the top on the first island+The production of trap；
(2) mask plate is utilized, respectively corresponds production capacitor, NPN crystal in the first~the 4th island using ion implantation technology
Pipe, PNP transistor, resistance；
(3) it grows to form dielectric layer in the upper surface of the second substrate using low-pressure chemical vapour deposition technique, to play electricity
The effect of isolation；
(4) single-chip LED light electric coupler is completed above the second largest island according to process identical with step 3 and step 4
The production of other parts；
(5) region above the first~the 4th island is located to second dielectric layer using sense coupling technique
It performs etching, is respectively formed the electrode through-hole of capacitor, NPN transistor, PNP transistor, resistance；
(6) using magnetron sputtering capacitor, NPN transistor, PNP transistor, resistance electrode through-hole in, respectively make aluminium electricity
Then pole etches away extra aluminum metal, and complete capacitor, NPN transistor, PNP transistor, the electrical connection between resistance with shape
At back-end circuit；Finally complete the silicon optical detector anode of single-chip LED light electric coupler and the input electrode of back-end circuit
Electrical connection and the silicon optical detector cathode of single-chip LED light electric coupler and being electrically connected for the ground electrode of back-end circuit；
(7) power electrode, output electrode and the ground electrode that back-end circuit is drawn above the first big island, above the second largest island
Draw the light source positive electrode and light source negative electrode of single-chip LED light electric coupler；
(8) carry out low-temperature annealing, all metal electrodes for making single-chip LED light electric coupler, back-end circuit include and respectively
Corresponding position is respectively formed Ohmic contact.
Due to the adoption of the above technical solution, compared with prior art, acquired technological progress is the present invention:
(1) ray detector of single-chip LED light electric coupler and LED light source make on the same substrate in the present invention, phase
It is needed than traditional photoelectrical coupler using gluing process production planar structure or when making the photoelectrical coupler of axial arrangement
Light source and optical detector are welded, device integration is high, and package dimension reduces, and reduces manufacture difficulty and cost；
(2) single-chip LED light electric coupler of the invention, can be with circuit integration on the same substrate, and LED light source and light are visited
It is axially stacked to survey device, further reduced cost of manufacture, integrated level with higher；
(3) present invention is realized using the p-n junction of GaAsP material and is shone, total reflection of the top-level metallic electrode of LED light source to light
Effect can limit the direction of propagation of light, reduce the loss in optical transmission process；
(4) Al is arranged in the LED light source of GaAsP material of the invention2O3Buffer layer is used for GaP and SiO2Between Lattice Matching,
With one layer of GaAs1-XPXContent gradually variational layer is set above for the Lattice Matching between the GaAsP layer of constant composition and GaP layers
Meter improves the reliability of device；
(5) the N-shaped GaAs of LED light source of the invention1-XPXUse nitrogen as impurity in constant composition layer, to improve
Luminous efficiency；
(6) wave-length coverage that the optical detector that the present invention uses silicon materials to make as substrate can detect is arrived in 400nm
Between 1000nm, the spectral region of this and LED are coincide very much, improve the performance of device.
The present invention is suitable for the integrated technology field of photoelectrical coupler.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.
In the accompanying drawings:
Fig. 1 is the overall structure diagram of the embodiment of the present invention 1；
Fig. 2 is the overall structure diagram of the embodiment of the present invention 3；
Fig. 3 is the circuit diagram of the embodiment of the present invention 3；
Fig. 4 is the circuit diagram of the back-end circuit of the embodiment of the present invention 3.
In figure: 1, first substrate, the 2, first deep p-well, the 3, first high-aspect-ratio p-well, the 4, second high-aspect-ratio p-well, 5,
First thin n+Trap, 6, pin photodiode cathode, 7, pin photodiode anode, 8, first medium layer, 9, Al2O3Buffering
Layer, 10, GaP layers of N-shaped, 11, N-shaped GaAs1-XPXContent gradually variational layer, 12, N-shaped GaAs1-XPXConstant composition layer, 13, P+Type GaAs1- XPXConstant composition layer, 14, light source anode, 15, light source cathode, the 17, second substrate, the 18, second deep p-well, the 19, first high-aspect-ratio
P+Trap, the 20, second high-aspect-ratio P+Trap, 21, third depth p-well, 22, third high-aspect-ratio p-well, the 23, the 4th high-aspect-ratio p-well,
24, the 5th high-aspect-ratio p-well, the 25, the 6th high-aspect-ratio p-well, the 26, the 7th high-aspect-ratio p-well, 27, dielectric layer, 28, preceding storing
Big circuit.
Specific embodiment
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.It should be appreciated that preferred reality described herein
Apply example only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.
A kind of single-chip LED light electric coupler of embodiment 1
As shown in Figure 1, the present embodiment includes the silicon optical detector, first medium layer 8 and LED light of axially stacked arrangement from bottom to top
Source.Wherein, silicon optical detector is produced in the first substrate 1 using CMOS technology, the first substrate 1 is
I type silicon substrate, i type, that is, n- Type is lightly doped.Silicon optical detector is pin photodiode, avalanche photodide, phototriode
Or other silicon optical detectors.
The silicon optical detector of the present embodiment is illustrated by taking pin photodiode as an example, as shown in Figure 1, in the first substrate 1
The the first high-aspect-ratio p-well 3 and the second high-aspect-ratio p-well 4 for being injected with the first deep p-well 2 and being connected with the first deep p-well 2, first
Deep p-well 2, the first high-aspect-ratio p-well 3 and the second high-aspect-ratio p-well 4 are connected to form the first island, and the top on the first island is embedded with first
Thin n+Trap 5, pin photodiode cathode 6 is from the first high-aspect-ratio p-well 3 is drawn, pin photodiode anode 7 is from the first thin n+
Trap 5 is drawn.
First medium layer 8 in the present embodiment is using the SiO with a thickness of 300nm ~ 500nm2Spacer medium layer, for realizing
Electrical isolation between pin photodiode and LED light source.As shown in Figure 1, first medium layer 8 is covered on pin photodiode
Upper surface remove all areas outside pin photodiode cathode 6 and pin photodiode anode 7.
There is the Al of one layer of 10nm ~ 50nm thickness made of the growth of atomic layer deposition (ALD) technique on first medium layer 82O3
Buffer layer 9, LED light source are located at Al2O3On buffer layer 9.LED light source is L-shaped, including from bottom to top successively grow made of n
Type GaP layer 10, N-shaped GaAs1-XPXContent gradually variational layer 11, N-shaped GaAs1-XPXConstant composition layer 12 and P+Type GaAs1-XPXConstant group
Layering 13；N-shaped GaAs1-XPXContent gradually variational layer 11, N-shaped GaAs1-XPXConstant composition layer 12 and P+Type GaAs1-XPXConstant composition layer
13 it is of same size, the width of N-shaped GaP layer 10 is greater than GaAs1-XPXThe width of content gradually variational layer.N-shaped GaAs1-XPXConstant composition
The impurity of layer 12 is nitrogen, and luminous efficiency can be improved in doping nitrogen.Assuming that N-shaped GaAs1-XPXX=X in constant composition layer 120,X0
∈ [0.55,0.7], then N-shaped GaAs1-XPXX in content gradually variational layer 11 is bottom-up to be reduced to X by 10。
In P+Type GaAs1-XPXThe top of constant composition layer 13 is covered with light source anode 14, can limit the propagation side of light
To, and reduce loss of the light in communication process
The second thin n is injected in the laterally free end of LED light source, the top of N-shaped GaP layer 10+Trap, from the second thin n+Trap draws light
Source cathode 15.
A kind of production method of the single-chip LED light electric coupler of embodiment 2
The present embodiment is for making embodiment 1, and sequence carries out according to the following steps:
One, n is used-The Silicon Wafer of doping is as the first substrate 1, successively complete on the first substrate 1 first using ion implantation technology
At the production of the first deep p-well 2, the first high-aspect-ratio p-well 3, the second high-aspect-ratio p-well 4, the first island is formed, then on the first island
Top complete the first thin n+The production of trap 5；
Two, use low-pressure chemical vapour deposition technique on the first substrate 1 growth thickness for 300nm ~ 500nm SiO2Isolation is situated between
Matter layer is as first medium layer 8, to play the role of electric isolation；
Three, the Al of one layer of 10nm ~ 50nm thickness is grown in the top of first medium layer 8 using atomic layer deposition processes2O3Buffer layer
9；
Then the production of LED light source is completed on first medium layer 8 using liquid phase epitaxy, which includes the following steps,
S1, using liquid phase epitaxy, first in Al2O3The GaP layer 10 that one layer of n-type doping is grown on buffer layer 9, later in N-shaped GaP
Successively epitaxial growth N-shaped GaAs on layer 101-XPXContent gradually variational layer 11, N-shaped GaAs1-XPXConstant composition layer 12 and p+Type GaAs1- XPXConstant composition layer 13；
S2, using sense coupling technique to N-shaped GaAs1-XPXContent gradually variational layer 11, N-shaped GaAs1-XPXIt is constant
Component layers 12 and p+Type GaAs1-XPXThe side for being located at the top of the second high-aspect-ratio p-well 4 of constant composition layer 13 perform etching until
The GaP layer 10 of n-type doping is exposed, the laterally free end of LED light source is so far formed；
S3, using sense coupling technique to N-shaped GaAs1-XPXContent gradually variational layer 11, N-shaped GaAs1-XPXIt is constant
Component layers 12, p+ type GaAs1-XPXConstant composition layer 13 and n-type doping GaP layer 10 are located at the first high-aspect-ratio p-well 3 top
Side performs etching, until exposing first medium layer 8；
S4, using sense coupling technique respectively to the first high-aspect-ratio p-well 3, the first thin n+The top of trap 5
First medium layer 8 performs etching, and forms first electrode through-hole and second electrode through-hole；
S5, the second thin n is formed on the laterally free end of LED light source, the top of n-type doping GaP layer 10 using ion implantation technology+
Trap utilizes the region of mask plate limitation ion implanting in the process；
Four, using magnetron sputtering respectively in first electrode through-hole, in second electrode through-hole, P+Type GaAs1-XPXConstant composition layer
13 surface, the second thin n+The surface of trap makes aluminium electrode respectively, then etches away extra aluminum metal, forms pin photoelectricity two
Pole pipe cathode 6, pin photodiode anode 7, light source anode 14 and light source cathode 15；
Five, low-temperature annealing is carried out, pin photodiode cathode 6, pin photodiode anode 7, light source anode 14 and light source are made
Cathode 15 and respectively corresponding position are respectively formed Ohmic contact.
A kind of integrated circuit of the single-chip LED light electric coupler of embodiment 3
As shown in Fig. 2, the present embodiment includes the single-chip LED light electric coupler being integrated on the second substrate 17 and back-end circuit.
Second substrate 17 is nType silicon substrate；In second substrate 17 by the second deep p-well 18 that ion implantation technology is formed with
And the first high-aspect-ratio P being connected with the second deep p-well 18+Trap 19 and the second high-aspect-ratio P+Trap 20, the second deep p-well 18 and first
High-aspect-ratio P+Trap 19, the second high-aspect-ratio P+Trap 20 is connected to form the first big island and the second largest island.Back-end circuit is located at first
Big island, single-chip LED light electric coupler are located at the second largest island.
First big island is injected with third depth p-well 21 and the third being connected with third depth p-well 21~the 7th high-aspect-ratio p-well
22~26, third depth p-well 21 and third high-aspect-ratio p-well 22, the 4th high-aspect-ratio p-well 23 are connected to form the first island, third
Deep p-well 21 and the 4th high-aspect-ratio p-well 23, the 5th high-aspect-ratio p-well 24 are connected to form the second island, third depth p-well 21 and
Five high-aspect-ratio p-wells 24, the 6th high-aspect-ratio p-well 25 are connected to form third island, third depth p-well 21 and the 6th high-aspect-ratio P
Trap 25, the 7th high-aspect-ratio p-well 26 are connected to form the 4th island.The production of first island has capacitor, and the production of the second island has NPN brilliant
Body pipe, the production of third island have PNP transistor, and the production of the 4th island has resistance, capacitor, NPN transistor, PNP transistor and electricity
Resistance is electrically connected to each other to form back-end circuit.Resistance in four islands, capacitor, NPN transistor, PNP transistor and resistance number
Amount, parameter, connection type to each other are decided according to the actual requirements.
The structure of single-chip LED light electric coupler in the present embodiment is identical as embodiment 1, is not repeated to introduce.
First upper surface great Dao is covered with second dielectric layer, and second dielectric layer is included with single-chip LED light electric coupler
First medium layer 8 be integrally formed and form the dielectric layer 27 of entire integrated circuit, dielectric layer 27 is using identical with first medium layer 8
Material.
Power electrode Vcc, the output electrode Vout and ground electrode GND, pin light of back-end circuit are drawn above the first big island
Electric diode anode 7 is connected with the input electrode Vin of back-end circuit, the ground electrode of pin photodiode cathode 6 and back-end circuit
GND is connected.
Such as Fig. 3, a kind of connection type of single-chip LED light electric coupler and back-end circuit is given, back-end circuit is one
A pre-amplification circuit 28.LED light source work under forward biased condition, pin photodiode work under zero-bias conditions,
The both ends of pin photodiode are connected respectively to two input ports of pre-amplification circuit 28, the pin photoelectricity under the conditions of zero bias
Diode operation is similar to solar battery in " photovoltaic mode ", has dark current small, the good advantage of the photoelectric conversion linearity.
As shown in figure 4, giving a kind of structure of pre-amplification circuit 28, the pre-amplification circuit 28 in figure is one three
Grade amplifying circuit, is made of the differential amplifier circuit of double-width grinding Single-end output, total radio amplifier and complementary output circuit.
A kind of production method of the integrated circuit of the single-chip LED light electric coupler of embodiment 4
The present embodiment is for making embodiment 3, and sequence carries out according to the following steps:
(1) n is selected-The Silicon Wafer of doping is as the second substrate 17, by mask plate, using ion implantation technology, first
The second deep p-well 18, the first high-aspect-ratio P is sequentially completed on two substrates 17+Trap 19 and the second high-aspect-ratio P+The production of trap 20, shape
At the first big island and the second largest island；Then third depth p-well 21, third~the 7th high-aspect-ratio p-well 22 are completed on the first big island
~26 production forms the first~the 4th island；Then the first deep p-well 2,3 and of the first high-aspect-ratio p-well is completed on the second largest island
The production of second high-aspect-ratio p-well 4 forms the first island, finally completes the first thin n on the top on the first island+The production of trap 5；
(2) utilize suitable mask plate, respectively corresponded in the first~the 4th island using ion implantation technology production capacitor,
NPN transistor, PNP transistor, resistance；
(3) use low-pressure chemical vapour deposition technique in the upper surface growth thickness of the second substrate 17 in 300nm~500nm
Between SiO2Spacer medium forms dielectric layer 27, to play the role of electric isolation；
(4) single-chip LED light is completed above the second largest island according to process identical with step 3 in embodiment 2 and step 4
The production of the other parts of electric coupler；
(5) area above the first~the 4th island is located to second dielectric layer 27 using sense coupling technique
Domain performs etching, and is respectively formed the electrode through-hole of capacitor, NPN transistor, PNP transistor, resistance；
(6) using magnetron sputtering capacitor, NPN transistor, PNP transistor, resistance electrode through-hole in, respectively make aluminium electricity
Then pole etches away extra aluminum metal, and complete capacitor, NPN transistor, PNP transistor, the electrical connection between resistance with shape
At back-end circuit, the silicon optical detector anode of single-chip LED light electric coupler and the input electrode of back-end circuit are finally completed
Electrical connection and the silicon optical detector cathode of single-chip LED light electric coupler and being electrically connected for the ground electrode of back-end circuit, formation is such as
Fig. 3, circuit connecting relation shown in Fig. 4；
(7) power electrode Vcc, output electrode Vout and the ground electrode GND of back-end circuit are drawn above the first big island；From
The light source positive electrode 14 and light source negative electrode 15 of single-chip LED light electric coupler are drawn above two big islands；
(8) low-temperature annealing is carried out, keeps single-chip LED light electric coupler, all metal electrodes of back-end circuit and respective institute right
The position answered is respectively formed Ohmic contact.
Claims (9)
1. a kind of single-chip LED light electric coupler, it is characterised in that: including making row axial from bottom to top on the first substrate
Silicon optical detector, first medium layer and the LED light source of cloth；
The first deep p-well and the first high-aspect-ratio p-well being connected with the first deep p-well and second high are injected in first substrate
Depth-to-width ratio p-well, the first deep p-well, the first high-aspect-ratio p-well and the second high-aspect-ratio p-well are connected to form the first island, the first island it is upper
Portion is embedded with the first thin n+Trap；
Silicon optical detector anode is from the first thin n+Trap is drawn, silicon optical detector cathode is drawn from the first high-aspect-ratio p-well；
First substrate is nType silicon substrate.
2. a kind of single-chip LED light electric coupler according to claim 1, it is characterised in that: the LED light source and first
Growth has Al between dielectric layer2O3Buffer layer；
The LED light source is L-shaped, including from bottom to top successively grow made of GaP layers of N-shaped, N-shaped GaAs1-XPXContent gradually variational
Layer, N-shaped GaAs1-XPXConstant composition layer and P+Type GaAs1-XPXConstant composition layer, N-shaped GaAs1-XPXContent gradually variational layer, N-shaped
GaAs1-XPXConstant composition layer and P+Type GaAs1-XPXConstant composition layer it is of same size, the width that GaP layers of N-shaped be greater than GaAs1- XPXThe width of content gradually variational layer；
The P+Type GaAs1-XPXProduction has light source anode, laterally free end, N-shaped GaP in LED light source on constant composition layer
The top of layer is injected with the second thin n+Trap, from the second thin n+Trap draws light source cathode；
The N-shaped GaAs1-XPXConstant composition layer, P+Type GaAs1-XPXX=X in constant composition layer0,X0∈ [0.55,0.7], N-shaped
GaAs1-XPXX is bottom-up in content gradually variational layer is reduced to X by 10。
3. a kind of production method of single-chip LED light electric coupler according to claim 1 or 2, it is characterised in that including
The following steps successively carried out:
One, n is used-The Silicon Wafer of doping is as the first substrate, by mask plate, using ion implantation technology, first in the first substrate
On be sequentially completed the production of the first deep p-well, the first high-aspect-ratio p-well, the second high-aspect-ratio p-well, the first island is formed, then the
Complete the first thin n in the top on one island+The production of trap；
Two, using low-pressure chemical vapour deposition technique the first substrate one dielectric layer of upper surface growth regulation；
Three, the production of LED light source is completed on first medium layer using liquid phase epitaxy；
Four, the production of silicon optical detector anode, silicon optical detector cathode, light source anode, light source cathode is completed using magnetron sputtering.
4. the production method of single-chip LED light electric coupler according to claim 3, it is characterised in that: complete step 2
Afterwards, before carrying out step 3, one layer of 10nm ~ 50nm thickness is grown in the top of first medium layer using atomic layer deposition processes
Al2O3Buffer layer.
5. the production method of single-chip LED light electric coupler according to claim 4, it is characterised in that the step three guarantees
Include the following steps successively carried out:
S1, using liquid phase epitaxy technology, first in Al2O3GaP layers of N-shaped of one layer of epitaxial growth on buffer layer, later at GaP layers of N-shaped
On successively epitaxial growth N-shaped GaAs1-XPXContent gradually variational layer, N-shaped GaAs1-XPXConstant composition layer and p+Type GaAs1-XPXConstant group
Layering；
S2, using sense coupling technique to N-shaped GaAs1-XPXContent gradually variational layer, N-shaped GaAs1-XPXConstant composition
Layer and p+Type GaAs1-XPXThe side of constant composition layer being located above the second high-aspect-ratio p-well performs etching until exposing N-shaped
GaP layers, so far form the laterally free end of LED light source；
S3, using sense coupling technique to N-shaped GaAs1-XPXContent gradually variational layer, N-shaped GaAs1-XPXConstant composition
Layer, p+ type GaAs1-XPXConstant composition layer and GaP layers of N-shaped of the side being located above the first high-aspect-ratio p-well perform etching, directly
To exposing first medium layer；
S4, using sense coupling technique respectively to the first high-aspect-ratio p-well, the first thin n+The of the top of trap
One dielectric layer performs etching, and forms first electrode through-hole and second electrode through-hole；
S5, the second thin n is formed on the laterally free end of LED light source, GaP layers of n-type doping of top using ion implantation technology+Trap,
The region of mask plate limitation ion implanting is utilized in the process.
6. the production method of single-chip LED light electric coupler according to claim 5, it is characterised in that the step 4 packet
Include the following steps successively carried out:
A1, using magnetron sputtering respectively in first electrode through-hole, in second electrode through-hole, P+Type GaAs1-XPXConstant composition layer
Upper surface, the second thin n+The upper surface of trap makes aluminium electrode respectively, then etches away extra aluminum metal, forms silicon optical detection
Device cathode, silicon optical detector anode, light source anode and light source cathode；
A2, carry out low-temperature annealing, make silicon optical detector anode, silicon optical detector cathode, light source anode and light source cathode with it is respective
Corresponding position is respectively formed Ohmic contact.
7. a kind of integrated circuit of single-chip LED light electric coupler described in 2 of living according to claim 1, it is characterised in that: including
Single-chip LED light electric coupler and the back-end circuit being integrated on the second substrate；
Second substrate is nType silicon substrate；
There are the first big island and the second largest island formed by ion implantation technology, the first big island and the second largest island in second substrate
The the second deep p-well formed by ion implantation technology and the first high-aspect-ratio P being connected with the second deep p-well+Trap and the second profundity
Width ratio P+Trap surrounds；
The back-end circuit is located at the first big island, and single-chip LED light electric coupler is located at the second largest island；
The first big island is injected with third depth p-well and the third being connected with third depth p-well~the 7th high-aspect-ratio p-well, the
Three deep p-wells, third high-aspect-ratio p-well and the 4th high-aspect-ratio p-well are connected to form the first island, third depth p-well, the 4th advanced width
It is connected to form the second island than p-well and the 5th high-aspect-ratio p-well, third depth p-well, the 5th high-aspect-ratio p-well and the 6th are advanced wide
It is connected to form third island than p-well, third depth p-well, the 6th high-aspect-ratio p-well and the 7th high-aspect-ratio p-well are connected to form the 4th
Island；
Production has capacitor in first island, and production has NPN transistor in the second island, and production has PNP brilliant in third island
Body pipe, production has resistance in the 4th island, the capacitor, NPN transistor, PNP transistor and resistance are electrically connected to each other to be formed after
Terminal circuit；
First upper surface great Dao is covered with second dielectric layer, second dielectric layer and single-chip LED light electric coupler included the
One dielectric layer is integrally formed the dielectric layer to form entire integrated circuit；
Power electrode, output electrode and the ground electrode that back-end circuit is drawn above the first big island, draw above the second largest island
The light source positive electrode and light source negative electrode of single-chip LED light electric coupler, the silicon optical detector of single-chip LED light electric coupler
Cathode is connected with the ground electrode of back-end circuit.
8. the integrated circuit of single-chip LED light electric coupler according to claim 7, it is characterised in that: the dielectric layer
Using SiO2Spacer medium layer.
9. the production method of the integrated circuit of single-chip LED light electric coupler according to claim 7, it is characterised in that packet
Include the following steps successively carried out:
(1) n is selected-The Silicon Wafer of doping is as the second substrate, by mask plate, using ion implantation technology, first second
The second deep p-well, the first high-aspect-ratio P is sequentially completed on substrate+Trap and the second high-aspect-ratio P+The production of trap, the first of formation are big
Island and the second largest island；Then third depth p-well, the production of third~the 7th high-aspect-ratio p-well are completed in the first big island, form the
One~the 4th island；Then the first deep p-well, the system of the first high-aspect-ratio p-well and the second high-aspect-ratio p-well is completed on the second largest island
Make, form the first island, finally completes the first thin n on the top on the first island+The production of trap；
(2) mask plate is utilized, respectively corresponds production capacitor, NPN crystal in the first~the 4th island using ion implantation technology
Pipe, PNP transistor, resistance；
(3) it grows to form dielectric layer in the upper surface of the second substrate using low-pressure chemical vapour deposition technique, to play electricity
The effect of isolation；
(4) single-chip LED light electric coupler is completed above the second largest island according to process identical with step 3 and step 4
The production of other parts；
(5) region above the first~the 4th island is located to second dielectric layer using sense coupling technique
It performs etching, is respectively formed the electrode through-hole of capacitor, NPN transistor, PNP transistor, resistance；
(6) using magnetron sputtering capacitor, NPN transistor, PNP transistor, resistance electrode through-hole in, respectively make aluminium electricity
Then pole etches away extra aluminum metal, and complete capacitor, NPN transistor, PNP transistor, the electrical connection between resistance with shape
At back-end circuit, the silicon optical detector anode of single-chip LED light electric coupler and the input electrode of back-end circuit are finally completed
Electrical connection and the silicon optical detector cathode of single-chip LED light electric coupler and being electrically connected for the ground electrode of back-end circuit；
(7) power electrode, output electrode and the ground electrode that back-end circuit is drawn above the first big island, above the second largest island
Draw the light source positive electrode and light source negative electrode of single-chip LED light electric coupler；
(8) carry out low-temperature annealing, all metal electrodes for making single-chip LED light electric coupler, back-end circuit include and respectively
Corresponding position is respectively formed Ohmic contact.
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