CN110416250B - Optical coupler based on heterojunction thin film light source, amplifying integrated circuit and manufacturing method thereof - Google Patents
Optical coupler based on heterojunction thin film light source, amplifying integrated circuit and manufacturing method thereof Download PDFInfo
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- CN110416250B CN110416250B CN201910823552.5A CN201910823552A CN110416250B CN 110416250 B CN110416250 B CN 110416250B CN 201910823552 A CN201910823552 A CN 201910823552A CN 110416250 B CN110416250 B CN 110416250B
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- 239000010409 thin film Substances 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 230000003287 optical effect Effects 0.000 title claims abstract description 44
- 239000010408 film Substances 0.000 claims abstract description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- 239000010703 silicon Substances 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 26
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000009616 inductively coupled plasma Methods 0.000 claims description 15
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910823552.5A CN110416250B (en) | 2019-09-02 | 2019-09-02 | Optical coupler based on heterojunction thin film light source, amplifying integrated circuit and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910823552.5A CN110416250B (en) | 2019-09-02 | 2019-09-02 | Optical coupler based on heterojunction thin film light source, amplifying integrated circuit and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
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CN110416250A CN110416250A (en) | 2019-11-05 |
CN110416250B true CN110416250B (en) | 2024-04-16 |
Family
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Family Applications (1)
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CN201910823552.5A Active CN110416250B (en) | 2019-09-02 | 2019-09-02 | Optical coupler based on heterojunction thin film light source, amplifying integrated circuit and manufacturing method thereof |
Country Status (1)
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CN (1) | CN110416250B (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
US5533041A (en) * | 1992-08-18 | 1996-07-02 | Fujitsu Limited | Optical transmission and reception device |
US6025610A (en) * | 1997-01-23 | 2000-02-15 | Nec Corporation | Solid relay and method of producing the same |
EP1811579A1 (en) * | 2006-01-18 | 2007-07-25 | STMicroelectronics S.r.l. | Galvanic optocoupler structure and corresponding hybrid integration process |
EP2490263A2 (en) * | 2011-02-17 | 2012-08-22 | Nxp B.V. | Optocoupler circuit |
CN103762265A (en) * | 2013-12-31 | 2014-04-30 | 天津大学 | Novel optical interconnection structure based on standard CMOS process and manufacturing method thereof |
CN105161486A (en) * | 2015-09-28 | 2015-12-16 | 兰州文理学院 | Perylene-3,4,9,10-tetracarboxylic acid dianhydride organic layer optoelectronic coupler and manufacture method |
CN106449815A (en) * | 2016-08-11 | 2017-02-22 | 上海大学 | Heterojunction solar cell device production method based on amorphous silicon thin films |
CN210110771U (en) * | 2019-09-02 | 2020-02-21 | 气派科技股份有限公司 | Fully-integrated photoelectric coupler based on heterojunction thin-film light source and integrated circuit thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6392256B1 (en) * | 1996-02-01 | 2002-05-21 | Cielo Communications, Inc. | Closely-spaced VCSEL and photodetector for applications requiring their independent operation |
US6509574B2 (en) * | 1999-12-02 | 2003-01-21 | Texas Instruments Incorporated | Optocouplers having integrated organic light-emitting diodes |
US6710376B2 (en) * | 2001-09-04 | 2004-03-23 | Eugene Robert Worley | Opto-coupler based on integrated forward biased silicon diode LED |
DE102006040788B4 (en) * | 2006-08-31 | 2013-02-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Integrated optocoupler with organic light emitter and inorganic photodetector |
ITMI20070101A1 (en) * | 2007-01-24 | 2008-07-25 | St Microelectronics Srl | GOLVANIC OPTOISOLATOR MONOLITHICALLY INTEGRATED ON SILICON AND ITS RELATED INTEGRATION PROCESS |
US7989822B2 (en) * | 2007-11-08 | 2011-08-02 | Eugene R. Worley | Optocoupler using silicon based LEDs |
TWI542913B (en) * | 2015-03-20 | 2016-07-21 | 隆達電子股份有限公司 | Photocoupler package |
-
2019
- 2019-09-02 CN CN201910823552.5A patent/CN110416250B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
US5533041A (en) * | 1992-08-18 | 1996-07-02 | Fujitsu Limited | Optical transmission and reception device |
US6025610A (en) * | 1997-01-23 | 2000-02-15 | Nec Corporation | Solid relay and method of producing the same |
EP1811579A1 (en) * | 2006-01-18 | 2007-07-25 | STMicroelectronics S.r.l. | Galvanic optocoupler structure and corresponding hybrid integration process |
EP2490263A2 (en) * | 2011-02-17 | 2012-08-22 | Nxp B.V. | Optocoupler circuit |
CN103762265A (en) * | 2013-12-31 | 2014-04-30 | 天津大学 | Novel optical interconnection structure based on standard CMOS process and manufacturing method thereof |
CN105161486A (en) * | 2015-09-28 | 2015-12-16 | 兰州文理学院 | Perylene-3,4,9,10-tetracarboxylic acid dianhydride organic layer optoelectronic coupler and manufacture method |
CN106449815A (en) * | 2016-08-11 | 2017-02-22 | 上海大学 | Heterojunction solar cell device production method based on amorphous silicon thin films |
CN210110771U (en) * | 2019-09-02 | 2020-02-21 | 气派科技股份有限公司 | Fully-integrated photoelectric coupler based on heterojunction thin-film light source and integrated circuit thereof |
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Publication number | Publication date |
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CN110416250A (en) | 2019-11-05 |
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Effective date of registration: 20200526 Address after: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant after: University of Electronic Science and Technology of China Applicant after: GUANG'AN VOCATIONAL AND TECHNICAL College Applicant after: CHONGQING ZHONGKE YUXIN ELECTRONIC Co.,Ltd. Applicant after: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant after: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. Applicant after: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant after: GUANGDONG CHENGLITAI TECHNOLOGY CO.,LTD. Applicant after: SICHUAN JINGHUI SEMICONDUCTOR Co.,Ltd. Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant before: University of Electronic Science and Technology of China Applicant before: China Chippacking Technology Co.,Ltd. Applicant before: GUANG'AN VOCATIONAL AND TECHNICAL College Applicant before: CHONGQING ZHONGKE YUXIN ELECTRONIC Co.,Ltd. Applicant before: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant before: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. Applicant before: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant before: GUANGDONG CHENGLITAI TECHNOLOGY Co.,Ltd. Applicant before: SICHUAN JINGHUI SEMICONDUCTOR Co.,Ltd. |
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