CN110416250B - Optical coupler based on heterojunction thin film light source, amplifying integrated circuit and manufacturing method thereof - Google Patents
Optical coupler based on heterojunction thin film light source, amplifying integrated circuit and manufacturing method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 87
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000009616 inductively coupled plasma Methods 0.000 claims description 15
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 6
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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Abstract
The invention discloses an optical coupler based on heterojunction film light source, comprising silicon-based TiO which is axially arranged from bottom to top and is manufactured on a first substrate by using an integrated circuit process 2 A thin film light source, a first dielectric layer and a silicon photodetector. The invention also discloses a manufacturing method of the optical coupler based on the heterojunction thin-film light source, an amplifying integrated circuit of the optical coupler based on the heterojunction thin-film light source and a manufacturing method of the amplifying integrated circuit. The silicon photodetector and the silicon-based TiO of the optical coupler based on the heterojunction film light source in the invention 2 The thin film light source is manufactured on the same substrate, so that the integration level of the device is high, the packaging size is reduced, and the manufacturing difficulty and cost are reduced; the optical coupler based on the heterojunction thin film light source can be integrated with a circuit on the same substrate, and meanwhile, the light source and the optical detector are axially stacked, so that the light transmission distance is shortened, and the light transmission distance can be improvedThe integration level reduces the loss of light in the propagation process. The invention is suitable for the technical field of photoelectric coupler integration.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectricity, relates to a photoelectric coupler, and in particular relates to an optical coupler based on a heterojunction thin film light source, an integrated circuit and a manufacturing method thereof.
Background
Photocouplers are an important type of opto-electronic device that can send signals from one circuit to another, use light instead of wires, convert electrical signals to optical signals using Light Emitting Diodes (LEDs), and receive optical signals using photodetectors and convert them to electrical signals. The photoelectric coupler has the advantages of strong anti-interference capability, good reliability, electric isolation and the like, and is widely applied to circuits such as logic switches, digital-to-analog conversion and the like.
With the development of the electronic information industry, the electronic equipment terminal is miniaturized and integrated, and this also puts higher demands on the photoelectric coupler, requiring smaller volume and higher integration level. Conventional photocouplers package an LED of GaAsP material with a photodetector, with either planar or axial placement of the two devices. The manufacturing of the photoelectric coupler by adopting the planar structure requires a dispensing process; the use of an axial structure requires electric welding of the light source and the light detector. With the reduction of the packaging size, the dispensing and spot welding processes are more difficult, the manufacturing difficulty is increased, and the manufacturing cost is very high.
From the standpoint of cost and circuit density, the optimal implementation of the photocoupler is to embed the photocoupler into a silicon chip, so that the manufacturing cost is reduced, and the integration level of the circuit can be improved.
Disclosure of Invention
The invention aims to provide an optical coupler based on a heterojunction thin film light source, which is characterized in that an LED light source and a light detector are manufactured on the same substrate, so that the integration level of the photoelectric coupler is improved, the optical coupler and a circuit can be integrated on the same substrate, the integration level of the whole circuit is further improved, and meanwhile, the manufacturing cost is reduced.
Another object of the present invention is to provide a method for manufacturing the optical coupler based on the heterojunction thin-film light source.
A third object of the present invention is to provide an amplifying integrated circuit comprising the optical coupler based on a heterojunction thin-film light source.
It is a further object of the present invention to provide a method for fabricating the amplifying integrated circuit.
The technical scheme adopted by the invention for realizing the purposes is as follows:
an optocoupler based on heterojunction film light source comprises silicon-based TiO (titanium dioxide) axially distributed from bottom to top and arranged on a first substrate 2 The thin film light source, the first dielectric layer and the silicon photodetector;
the first substrate is filled with a first deep P well, a first high depth-to-width P well and a second high depth-to-width P well which are connected with the first deep P well, the first high depth-to-width P well and the second high depth-to-width P well are connected to form a first island, and a first thin P is embedded at the upper part of the first island + A well;
the upper surface of the first substrate is covered with a first SiO 2 Layer at the first thin P + First SiO over the well 2 Embedded with the first SiO 2 TiO with equal layer thickness 2 Thin film layer, tiO 2 The width of the film layer is smaller than that of the first thin P+ well, and TiO 2 A first ITO film layer with the same width as the film layer is deposited on the film layer;
the positive electrode of the light source is from a first thin P + The well is led out, and the negative electrode of the light source is led out from the first ITO film layer;
the first substrate is an n-type silicon substrate.
As a limitation: the first dielectric layer adopts SiO 2 The width of the first dielectric layer is smaller than that of the first ITO film layer.
As a second definition: the silicon photodetector is a silicon PIN photodiode formed on the first dielectric layer, the silicon PIN photodiode comprises a second ITO film layer deposited on the first dielectric layer, and N is sequentially grown on the second ITO film layer + A second thin P is embedded at the upper part of the I-type amorphous silicon layer + The upper surface of the I-type amorphous silicon layer is covered with a second SiO 2 A layer;
the width of the second ITO film layer is the same as that of the first dielectric layer, N + The widths of the amorphous silicon layer and the amorphous silicon layer I are the same, and the width of the second ITO film layer is larger than N + The width of the amorphous silicon layer;
the positive electrode of the silicon PIN photodiode is connected with the second ITO film layer is led out, and the cathode of the silicon PIN photodiode is led out from the second thin P + The well is led out.
The manufacturing method of the optical coupler based on the heterojunction thin-film light source is carried out according to the following steps:
1. selecting an n-type doped silicon wafer as a first substrate, sequentially completing the manufacture of a first deep P well, a first high-depth-to-width-ratio P well and a second high-depth-to-width-ratio P well on the first substrate by using an ion implantation process through a mask plate to form a first island, and then completing a first thin P on the upper part of the first island + Manufacturing a trap;
2. coating a layer of TiO on the upper surface of the first substrate by adopting a sputtering process 2 Thin film, and then adopting inductively coupled plasma etching process to make TiO 2 Etching the film to remove excessive TiO 2 Thin film with width smaller than that of the first thin film P + TiO of well width 2 A thin film layer;
3. growing a first SiO on the upper surface of the first substrate by adopting a low-pressure chemical vapor deposition method 2 A layer to act as an electrical isolation;
4. the chemical mechanical polishing process is adopted for the first SiO 2 Layer and TiO 2 Flattening the surface of the film layer to make the thickness of the TiO2 film layer and the thickness of the first SiO2 layer the same;
5. TiO is prepared by adopting a magnetron sputtering process 2 Growing a first ITO film layer above the film layer, and then etching the first ITO film layer by utilizing a plasma etching process to ensure that the width of the first ITO film layer is the same as that of the TiO2 film layer;
6. a first dielectric layer grows above the first ITO film layer by adopting a low-pressure chemical vapor deposition method;
7. manufacturing a silicon photodetector on the first dielectric layer;
8. from a first thin P by a magnetron sputtering process + The well leads out the light source anode, the light source cathode from the first ITO film layer, the silicon photodetector anode from the second ITO film layer, and the light source cathode from the second thin P + The well leads out the negative pole of the silicon photodetector and etches away the redundant aluminum by ICP technologyA metal;
9. and performing low-temperature annealing to enable the light source anode, the light source outlet cathode, the silicon light detector anode and the silicon light detector cathode to form ohmic contact with the positions of the light source anode, the light source outlet cathode, the silicon light detector anode and the silicon light detector cathode respectively.
As a limitation, the sixth step further includes the following steps: and etching the first dielectric layer by using a plasma etching process, so that the width of the first dielectric layer is smaller than that of the first ITO film layer.
As a second limitation, the seventh step is performed in the following sequence of steps:
s1, growing a second ITO film layer above a first dielectric layer by adopting a magnetron sputtering process;
s2, sequentially epitaxially growing N above the second ITO film layer by utilizing liquid phase epitaxy + A type I amorphous silicon layer;
s3, forming a second thin P on the upper part of the I-type amorphous silicon layer by using an ion implantation process + A trap limiting the ion implantation region by using a mask plate in the process;
s4, depositing a second SiO on the upper surface of the I-type amorphous silicon layer by adopting a low-pressure chemical vapor deposition process 2 A layer, then adopting an inductively coupled plasma etching process to etch the second SiO 2 And etching the layer to form an electrode through hole for leading out the negative electrode of the silicon photodetector.
An amplifying integrated circuit based on an optical coupler of a heterojunction thin-film light source comprises the optical coupler based on the heterojunction thin-film light source and a back-end circuit, wherein the optical coupler and the back-end circuit are integrated on a second substrate;
the second substrate is an n-type silicon substrate;
the second substrate is provided with a first big island and a second big island which are formed by an ion implantation process, a second deep P well formed by the ion implantation process and a first high depth-to-width ratio P connected with the second deep P well ＋ Well and second high aspect ratio P ＋ Enclosing the wells;
the back-end circuit is positioned in a first island, and the optical coupler based on the heterojunction thin-film light source is positioned in a second island;
the first large island is injected with a third deep P well and third to seventh high depth-to-width P wells connected with the third deep P well, the third high depth-to-width P well and the fourth high depth-to-width P well are connected to form a first small island, the third deep P well, the fourth high depth-to-width P well and the fifth high depth-to-width P well are connected to form a second small island, the third deep P well, the fifth high depth-to-width P well and the sixth high depth-to-width P well are connected to form a third small island, and the third deep P well, the sixth high depth-to-width P well and the seventh high depth-to-width P well are connected to form a fourth small island;
the first island is provided with a capacitor, the second island is provided with an NPN transistor, the third island is provided with a PNP transistor, the fourth island is provided with a resistor, and the capacitor, the NPN transistor, the PNP transistor and the resistor are electrically connected with each other to form a back-end circuit;
the upper surface of the first island is covered with third SiO 2 Layer, third SiO 2 Layer and first SiO contained in optical coupler based on heterojunction film light source 2 Forming a dielectric layer of the whole integrated circuit by layer integral forming;
the power electrode, the output electrode and the ground electrode of the back-end circuit are led out from the upper part of the first island, the positive electrode of the silicon photodetector of the optical coupler based on the heterojunction film light source is connected with the input electrode of the back-end circuit, and the negative electrode of the silicon photodetector of the optical coupler based on the heterojunction film light source is connected with the ground electrode of the back-end circuit.
The manufacturing method of the optical coupler amplifying integrated circuit based on the heterojunction thin-film light source comprises the following steps in sequence:
firstly, an n-doped silicon wafer is selected as a second substrate, and a mask plate is used for sequentially completing a second deep P well and a first high depth-to-width ratio P on the second substrate by using an ion implantation process ＋ Well and second high aspect ratio P ＋ The manufacturing of the well, a first big island and a second big island are formed; then completing the manufacture of a third deep P well and third to seventh high depth-to-width ratio P wells in the first large island to form first to fourth small islands; then completing the manufacture of the first deep P well, the first high depth-to-width ratio P well and the second high depth-to-width ratio P well in the second large island to form a first island, and finally completing the first thin P in the upper part of the first island + Manufacturing a trap;
secondly, using a mask plate, and adopting an ion implantation process to correspondingly manufacture a capacitor, an NPN transistor, a PNP transistor and a resistor in the first island to the fourth island respectively;
thirdly, plating a layer of TiO on the upper surface of the first substrate by adopting a sputtering process 2 Thin film, and then adopting inductively coupled plasma etching process to make TiO 2 Etching the film to remove excessive TiO 2 Thin film with width smaller than that of the first thin film P + TiO of well width 2 A thin film layer;
fourthly, a low-pressure chemical vapor deposition method is adopted to grow and form a dielectric layer on the upper surface of the second substrate so as to play a role in electrical isolation;
fifth, chemical mechanical polishing process is adopted to make the dielectric layer and TiO 2 Flattening the surface of the film layer to obtain TiO 2 The thickness of the film layer is the same as that of the dielectric layer;
(VI) in the same procedure as in the steps six to eight, in TiO 2 The manufacturing of other parts of the optical coupler based on the heterojunction thin-film light source is completed above the thin-film layer;
etching the regions of the dielectric layer above the first island to the fourth island by adopting an inductively coupled plasma etching process to respectively form electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor;
manufacturing aluminum electrodes in electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor by magnetron sputtering, etching redundant aluminum metal, completing electric connection among the capacitor, the NPN transistor, the PNP transistor and the resistor to form a back-end circuit, and finally completing connection between a silicon photodetector anode of an optocoupler based on a heterojunction thin-film light source and an input electrode of the back-end circuit and connection between a silicon photodetector cathode of the optocoupler based on the heterojunction thin-film light source and a ground electrode of the back-end circuit;
a power electrode, an output electrode and a ground electrode of a back-end circuit are led out from the upper part of the first island, and a light source anode and a light source cathode of an optical coupler based on a heterojunction thin-film light source are led out from the upper part of the second island;
and (ten) carrying out low-temperature annealing to enable all metal electrodes contained in the optocoupler and the back-end circuit based on the heterojunction thin-film light source to form ohmic contact with the corresponding positions respectively.
Compared with the prior art, the technical proposal adopted by the invention has the following technical progress:
(1) The invention relates to a silicon photodetector of an optical coupler based on a heterojunction film light source and silicon-based TiO 2 Compared with the traditional photoelectric coupler with a planar structure manufactured by using a dispensing process or the photoelectric coupler with an axial structure manufactured by using a film light source manufactured on the same substrate, the photoelectric coupler has the advantages that the light source and the light detector are required to be electrically welded, the integration level of the device is high, the packaging size is reduced, and the manufacturing difficulty and cost are reduced;
(2) The optical coupler based on the heterojunction thin film light source can be integrated with a circuit on the same substrate, the light source and the optical detector are axially stacked, the transmission distance of light is shortened, the integration level is improved, and meanwhile, the loss of the light in the transmission process is reduced;
(3) TiO advantageous for the invention 2 Thin film light sources utilize TiO 2 The P+ -Si heterojunction has electroluminescent spectrum covering red, green and blue regions, and is a high-efficiency broad-spectrum light source with light emission and TiO 2 The oxygen vacancies in the film are related, the oxygen vacancies are used as the deep energy level center of carrier radiation recombination to realize electroluminescence, when a layer of P+ -Si is used as the positive electrode of the light source, tiO 2 When the film is used as the negative electrode of the light source, the valence band top of the P-type silicon is almost similar to that of TiO 2 The valance band top of P-type silicon is even lower, so that holes of a layer of P-type silicon can be easily injected into TiO 2 In the valence band of the side and with TiO 2 The electrons in the conduction band recombine to achieve light emission, the leveling of the valence band makes the threshold voltage of such a light source very low, by reacting to TiO 2 The film is treated by argon plasma and can be treated by TiO 2 More oxygen vacancies are introduced into the upper layer of the film, so that the quantum efficiency of the light source is improved;
(4) The photodetector made of silicon material can detectThe optical wavelength of (2) is approximately in the range of 400nm to 1000nm, which is similar to silicon-based TiO 2 The emission spectrum ranges of the thin film light sources are very consistent, so that the efficiency of the whole device is higher.
The invention is suitable for the technical field of integration of photoelectric couplers.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
In the drawings:
FIG. 1 is a schematic overall structure of embodiment 1 of the present invention;
FIG. 2 is a schematic overall structure of embodiment 3 of the present invention;
FIG. 3 is a circuit diagram of embodiment 3 of the present invention;
fig. 4 is a circuit diagram of a back-end circuit according to embodiment 3 of the present invention.
In the figure: 1. a first dielectric layer 2, a first substrate 3, a first deep P well 4, a first high depth-to-width P well 5, a second high depth-to-width P well 6, a first thin P + Well, 7, light source anode, 8, first SiO 2 Layer, 9, tiO 2 Film layer 10, first ITO film layer 11, light source cathode 12, second ITO film layer 13, N + Amorphous silicon layer, 14, I amorphous silicon layer, 15, second thin P + Well, 16, second SiO 2 Layer 17, positive electrode of silicon PIN photodiode 18, negative electrode of silicon PIN photodiode 19, second substrate 20, second deep P well 21, first high aspect ratio P ＋ Well, 22, second high aspect ratio P ＋ Well 23, third deep P well 24, third high depth-width P well 25, fourth high depth-width P well 26, fifth high depth-width P well 27, sixth high depth-width P well 28, seventh high depth-width P well 29, dielectric layer 30, and pre-amplifying circuit.
Detailed Description
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are presented for purposes of illustration and explanation only and are not intended to limit the present invention.
Embodiment 1 an optocoupler based on heterojunction thin-film light source
As shown in FIG. 1, the embodiment comprises silicon-based TiO materials which are axially stacked from bottom to top 2 A thin film light source, a first dielectric layer 1 and a silicon photodetector.
Silicon-based TiO 2 The thin film light source is fabricated on a first substrate 2, and the first substrate 2 is an n-type silicon substrate. The first substrate 2 is injected with a first deep P well 3, a first high depth-to-width P well 4 and a second high depth-to-width P well 5 which are connected with the first deep P well 3, the first high depth-to-width P well 4 and the second high depth-to-width P well 5 are connected to form a first island, the upper part of the first island is embedded with a first thin P + A well 6. The upper surface of the first substrate 2 is grown with a first SiO layer with a thickness of 50-120 nm 2 Layer 8, at a first thin P + First SiO over well 6 2 Layer 8 is embedded with the first SiO 2 TiO with equal thickness of layer 8 2 Film layer 9, tiO 2 The width of the thin film layer 9 is smaller than the width of the first thin P+ well 6, tiO 2 The thin film layer 9 is deposited with a first ITO thin film layer 10 having a thickness of 50 to 100nm, which is the same as its own width. The light source anode 7 is arranged from the first thin P + The well 6 is led out, and the light source cathode 11 is led out from the first ITO thin film layer 10.
In this embodiment, the first dielectric layer 1 is made of SiO 2 The width of the first dielectric layer 1 is smaller than that of the first ITO film layer 10, and the thickness of the first dielectric layer 1 is 200-300 nm.
The silicon photodetector is a PIN photodiode, an avalanche photodiode or a phototriode. The silicon photodetector in this embodiment is described by taking a PIN photodiode as an example. As shown in FIG. 1, the silicon photodetector is a silicon PIN photodiode formed on a first dielectric layer 1, the silicon PIN photodiode comprises a second ITO film layer 12 deposited on the first dielectric layer 1, and N is sequentially grown on the second ITO film layer 12 + Amorphous silicon layer 13, amorphous silicon layer 14 of type I, embedded with a second thin P in amorphous silicon layer 14 of type I by ion implantation process + The upper surface of the well 15, the I-type amorphous silicon layer 14 is covered with a second SiO 2 Layer 16; the width of the second ITO film layer 12 and the first mediumThe width of the mass layer 1 is the same, N + The widths of the amorphous silicon layer 13 and the amorphous silicon layer 14 are the same, and the width of the second ITO film layer 12 is larger than N + Width of the amorphous silicon layer 13. The positive electrode 17 of the silicon PIN photodiode is led out from the second ITO film layer 12, and the negative electrode 18 of the silicon PIN photodiode is led out from the second thin P + The well 15 is led out.
Embodiment 2A method for manufacturing an optical coupler based on heterojunction thin-film light source
This example was used to make example 1, in the following sequence of steps:
an n-type doped silicon wafer is selected as a first substrate 2, and by means of a mask, an ion implantation process is used to sequentially complete the manufacture of a first deep P well 3, a first high aspect ratio P well 4 and a second high aspect ratio P well 5 on the first substrate 2 to form a first island, and then a first thin P is completed on the upper part of the first island + Manufacturing a well 6;
2. a sputtering process is adopted to plate a layer of TiO with the thickness of 100-200 nm on the upper surface of the first substrate 2 2 Thin film, and then adopting inductively coupled plasma etching process to make TiO 2 Etching the film to remove excessive TiO 2 Thin film with width smaller than that of the first thin film P + Width of well 6 of TiO 2 A film layer 9;
3. growing a first SiO on the upper surface of the first substrate 2 by adopting a low-pressure chemical vapor deposition method 2 Layer 8 to act as an electrical isolation;
4. the chemical mechanical polishing process is adopted for the first SiO 2 Layer 8 and TiO 2 Flattening the surface of the film layer 9 to control the thickness of the TiO2 film layer 9 to 50-120 nm so as to lead the TiO to be 2 Film layer 9 and first SiO 2 The thickness of layer 8 is the same;
5. TiO is prepared by adopting a magnetron sputtering process 2 A first ITO film layer 10 with the thickness of 50-100 nm grows above the film layer 9, and then the first ITO film layer 10 is etched by utilizing a plasma etching process, so that the width of the first ITO film layer 10 is the same as the width of the TiO2 film layer 9;
6. a first dielectric layer 1 with the thickness of 200-300 nm is grown above the first ITO film layer 10 by adopting a low-pressure chemical vapor deposition method; etching the first dielectric layer 1 by using a plasma etching process, so that the width of the first dielectric layer 1 is smaller than that of the first ITO film layer 10;
7. a silicon photodetector is fabricated on the first dielectric layer 1, which process comprises the following steps performed in sequence,
s1, growing a second ITO film layer 12 with the thickness of 50-100 nm above a first dielectric layer 1 by adopting a magnetron sputtering process;
s2, sequentially epitaxially growing N with the thickness of 50-100 nm above the second ITO film layer 12 by utilizing liquid phase epitaxy + A type amorphous silicon layer 13, a type I amorphous silicon layer 14;
s3, forming a second thin P on the upper part of the I-type amorphous silicon layer 14 by using an ion implantation process + A well 15 for limiting the ion implantation region by using a mask plate in the process;
s4, adopting a low-pressure chemical vapor deposition process to deposit second SiO on the upper surface of the I-type amorphous silicon layer 14 2 Layer 16, then a second SiO is etched using an inductively coupled plasma etching process 2 Etching the layer 16 to form an electrode via for extracting the cathode 18 of the silicon PIN photodiode;
8. from a first thin P by a magnetron sputtering process + The well 6 leads out the light source anode 7, the light source cathode 11 from the first ITO film layer 10, the anode 17 of the silicon PIN photodiode from the second ITO film layer 12, and the second thin P + The well leads out the cathode 18 of the silicon PIN photodiode and etches away the redundant aluminum metal by utilizing an ICP process;
9. and (3) performing low-temperature annealing to enable the light source anode 7, the light source outlet cathode 11, the silicon PIN photodiode anode 17 and the silicon PIN photodiode cathode 18 to form ohmic contact with the positions of the light source anode 7, the light source outlet cathode 11 and the silicon PIN photodiode anode 18.
Embodiment 3 an amplifying integrated circuit of an optocoupler based on heterojunction thin-film light source
As shown in fig. 2, the present embodiment includes an optocoupler and a back-end circuit based on a heterojunction thin-film light source integrated on a second substrate 19.
The second substrate 19 is an n-type silicon substrateA bottom; a second deep P-well 20 and a first high aspect ratio P connected to the second deep P-well 20 are formed in the second substrate 19 by an ion implantation process ＋ Well 21, second high aspect ratio P ＋ A well 22. The second deep P-well 20 is respectively corresponding to the first high aspect ratio P ＋ Well 21, second high aspect ratio P ＋ The wells 22 are connected to form a first island and a second island. The back-end circuit is located in a first island, and the optical coupler based on the heterojunction thin-film light source is located in a second island.
The first large island is implanted with a third deep P well 23 and third to seventh high aspect ratio P wells 24 to 28 connected with the third deep P well 23, the third high aspect ratio P well 24 and the fourth high aspect ratio P well 25 are connected to form a first small island, the third deep P well 23, the fourth high aspect ratio P well 25 and the fifth high aspect ratio P well 26 are connected to form a second small island, the third deep P well 23, the fifth high aspect ratio P well 26 and the sixth high aspect ratio P well 27 are connected to form a third small island, and the third deep P well 23, the sixth high aspect ratio P well 27 and the seventh high aspect ratio P well 28 are connected to form a fourth small island. The first island is provided with a capacitor, the second island is provided with an NPN transistor, the third island is provided with a PNP transistor, the fourth island is provided with a resistor, and the capacitor, the NPN transistor, the PNP transistor and the resistor are electrically connected with each other to form a back-end circuit.
The upper surface of the first island is covered with third SiO 2 Layer, third SiO 2 Layer and first SiO contained in optical coupler based on heterojunction film light source 2 The layer 8 is integrally formed to form a dielectric layer 29 of the entire integrated circuit, and the dielectric layer 29 is made of the same material as the first dielectric layer 1.
The power electrode Vcc, the output electrode Vout and the ground electrode GND of the back-end circuit are led out from the upper part of the first island, the positive electrode 17 of the silicon PIN photodiode is connected with the input electrode Vin of the back-end circuit, and the negative electrode 18 of the silicon PIN photodiode is connected with the ground electrode GND of the back-end circuit.
The structure of the optocoupler based on the heterojunction thin-film light source in this embodiment is the same as that of embodiment 1, and the description is not repeated.
Referring to fig. 3, a connection between an optocoupler based on a heterojunction thin-film light source and a back-end circuit, which is a pre-amplifier circuit 30, is shown. The silicon PIN photodiode works under the zero bias condition, two ends of the silicon PIN photodiode are respectively connected to two input ports of the pre-amplifying circuit 30, and the silicon PIN photodiode works under the zero bias condition in a photovoltaic mode similar to a solar cell, and has the advantages of small dark current and good photoelectric conversion linearity.
As shown in fig. 4, a structure of the pre-amplifier circuit 30 is shown, in which the pre-amplifier circuit 30 is a three-stage amplifier circuit, and is composed of a differential amplifier circuit with a double-ended input and a single-ended output, a common-emitter amplifier circuit, and a complementary output circuit.
Embodiment 4A method for manufacturing an amplifying integrated circuit of an optocoupler based on a heterojunction thin-film light source
This example was used to make example 3, performed in the following sequence of steps:
firstly, an n-doped silicon wafer is selected as a second substrate 19, and a second deep P well 20 and a first high aspect ratio P are sequentially completed on the second substrate 19 by using an ion implantation process through a mask ＋ Well 21 and second high aspect ratio P ＋ The fabrication of the wells 22, forming first and second islands; then completing the manufacture of a third deep P well 23 and third to seventh high aspect ratio P wells 24 to 28 in the first large island to form first to fourth small islands; then the first deep P well 3, the first high depth-to-width P well 4 and the second high depth-to-width P well 5 are manufactured in the second large island to form a first island, and finally the first thin P is manufactured on the upper part of the first island + Manufacturing a well 6;
secondly, using a mask plate, and adopting an ion implantation process to correspondingly manufacture a capacitor, an NPN transistor, a PNP transistor and a resistor in the first island to the fourth island respectively;
thirdly, adopting a sputtering process to plate a layer of TiO with the thickness of 100-200 nm on the upper surface of the first substrate 2 2 Thin film, and then adopting inductively coupled plasma etching process to make TiO 2 Etching the film to remove excessive TiO 2 Thin film with width smaller than that of the first thin film P + Width of well 6 of TiO 2 A film layer 9;
(IV) a dielectric layer 29 is formed on the upper surface of the second substrate 19 by low-pressure chemical vapor deposition to play a role in electrical isolation;
fifth, chemical mechanical polishing process is adopted to make the dielectric layer 29 and TiO 2 The surface of the film layer 9 is flattened to planarize TiO 2 The thickness of the film layer 9 is controlled between 50nm and 120nm, so that TiO 2 The thickness of the thin film layer 9 is the same as that of the dielectric layer 29;
(VI) in the same procedure as in step six to step eight in example 2, in TiO 2 The fabrication of other parts of the optocoupler based on the heterojunction thin-film light source is completed above the thin-film layer 9;
etching the regions of the dielectric layer 29 above the first to fourth islands by using an inductively coupled plasma etching process to form electrode through holes of the capacitor, the NPN transistor, the PNP transistor and the resistor respectively;
(eight) respectively manufacturing aluminum electrodes in electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor by adopting magnetron sputtering, etching redundant aluminum metal, completing electric connection among the capacitor, the NPN transistor, the PNP transistor and the resistor to form a back-end circuit, finally connecting the anode 17 of the silicon PIN photodiode with an input electrode Vin of the back-end circuit, and connecting the cathode 18 of the silicon PIN photodiode with a ground electrode GND of the back-end circuit;
(nine) a power electrode Vcc, an output electrode Vout and a ground electrode GND of a back-end circuit are led out from the upper part of the first island, and a light source anode 7 and a light source cathode 11 of an optical coupler based on a heterojunction thin-film light source are led out from the upper part of the second island;
and (ten) carrying out low-temperature annealing to enable all metal electrodes contained in the optocoupler and the back-end circuit based on the heterojunction thin-film light source to form ohmic contact with the corresponding positions respectively.
Claims (8)
1. An optocoupler based on heterojunction film light source, its characterized in that: comprising silicon-based TiO which is arranged on a first substrate from bottom to top and axially 2 The thin film light source, the first dielectric layer and the silicon photodetector;
the first linerThe bottom is filled with a first deep P well, a first high depth-to-width P well and a second high depth-to-width P well which are connected with the first deep P well, the first high depth-to-width P well and the second high depth-to-width P well are connected to form a first island, and a first thin P is embedded at the upper part of the first island + A well;
the upper surface of the first substrate is covered with a first SiO 2 Layer at the first thin P + First SiO over the well 2 Embedded with the first SiO 2 TiO with equal layer thickness 2 Thin film layer, tiO 2 The width of the film layer is smaller than that of the first thin P+ well, and TiO 2 A first ITO film layer with the same width as the film layer is deposited on the film layer;
the positive electrode of the light source is from a first thin P + The well is led out, and the negative electrode of the light source is led out from the first ITO film layer;
the first substrate is an n-type silicon substrate, and the thickness of the first dielectric layer is 200-300 nm.
2. The heterojunction-thin-film-light-source-based optocoupler of claim 1, wherein: the first dielectric layer adopts SiO 2 The width of the first dielectric layer is smaller than that of the first ITO film layer.
3. The heterojunction-based thin-film light source optocoupler of claim 1 or 2, wherein: the silicon photodetector is a silicon PIN photodiode formed on the first dielectric layer, the silicon PIN photodiode comprises a second ITO film layer deposited on the first dielectric layer, and N is sequentially grown on the second ITO film layer + A second thin P is embedded at the upper part of the I-type amorphous silicon layer + The upper surface of the I-type amorphous silicon layer is covered with a second SiO 2 A layer;
the width of the second ITO film layer is the same as that of the first dielectric layer, N + The widths of the amorphous silicon layer and the amorphous silicon layer I are the same, and the width of the second ITO film layer is larger than N + The width of the amorphous silicon layer;
the positive electrode of the silicon PIN photodiode is led out from the second ITO film layer, and the silicon PIN photodiode is provided with a first electrode and a second electrodeThe negative electrode of the polar tube is from the second thin P + The well is led out.
4. A method for manufacturing an optocoupler based on a heterojunction thin-film light source according to any one of claims 1-3, characterized by comprising the following steps in sequence:
1. selecting an n-type doped silicon wafer as a first substrate, sequentially completing the manufacture of a first deep P well, a first high-depth-to-width-ratio P well and a second high-depth-to-width-ratio P well on the first substrate by using an ion implantation process through a mask plate to form a first island, and then completing a first thin P on the upper part of the first island + Manufacturing a trap;
2. coating a layer of TiO on the upper surface of the first substrate by adopting a sputtering process 2 Thin film, and then adopting inductively coupled plasma etching process to make TiO 2 Etching the film to remove excessive TiO 2 Thin film with width smaller than that of the first thin film P + TiO of well width 2 A thin film layer;
3. growing a first SiO on the upper surface of the first substrate by adopting a low-pressure chemical vapor deposition method 2 A layer to act as an electrical isolation;
4. the chemical mechanical polishing process is adopted for the first SiO 2 Layer and TiO 2 Flattening the surface of the film layer to obtain TiO 2 Film layer and first SiO 2 The thickness of the layers is the same;
5. TiO is prepared by adopting a magnetron sputtering process 2 A first ITO film layer grows above the film layer, and then the first ITO film layer is etched by utilizing a plasma etching process, so that the width of the first ITO film layer and TiO (titanium dioxide) are achieved 2 The film layers have the same width;
6. a first dielectric layer grows above the first ITO film layer by adopting a low-pressure chemical vapor deposition method;
7. manufacturing a silicon photodetector on the first dielectric layer;
8. from a first thin P by a magnetron sputtering process + The well leads out the light source anode, the light source cathode from the first ITO film layer, the silicon photodetector anode from the second ITO film layer, the light source cathode from the second ITO film layerThin P + The well leads out the negative electrode of the silicon photodetector and etches away redundant aluminum metal by utilizing an ICP process;
9. and performing low-temperature annealing to enable the light source anode, the light source outlet cathode, the silicon light detector anode and the silicon light detector cathode to form ohmic contact with the positions of the light source anode, the light source outlet cathode, the silicon light detector anode and the silicon light detector cathode respectively.
5. The method for manufacturing an optical coupler based on a heterojunction thin-film light source according to claim 4, wherein the sixth step further comprises the following steps: and etching the first dielectric layer by using a plasma etching process, so that the width of the first dielectric layer is smaller than that of the first ITO film layer.
6. The method for manufacturing an optical coupler based on a heterojunction thin-film light source according to claim 4 or 5, wherein the step seven is performed according to the following sequence of steps:
s1, growing a second ITO film layer above a first dielectric layer by adopting a magnetron sputtering process;
s2, sequentially epitaxially growing N above the second ITO film layer by utilizing liquid phase epitaxy + A type I amorphous silicon layer;
s3, forming a second thin P on the upper part of the I-type amorphous silicon layer by using an ion implantation process + A trap limiting the ion implantation region by using a mask plate in the process;
s4, depositing a second SiO on the upper surface of the I-type amorphous silicon layer by adopting a low-pressure chemical vapor deposition process 2 A layer, then adopting an inductively coupled plasma etching process to etch the second SiO 2 And etching the layer to form an electrode through hole for leading out the negative electrode of the silicon photodetector.
7. An amplifying integrated circuit according to any one of claims 1-3, wherein: the optical coupler and the back-end circuit based on the heterojunction thin-film light source are integrated on the second substrate;
the second substrate is an n-type silicon substrate;
the second substrate is provided withFirst and second islands formed by an ion implantation process, a second deep P-well formed by an ion implantation process, and a first high aspect ratio P connected to the second deep P-well ＋ Well and second high aspect ratio P ＋ Enclosing the wells;
the back-end circuit is positioned in a first island, and the optical coupler based on the heterojunction thin-film light source is positioned in a second island;
the first large island is injected with a third deep P well and third to seventh high depth-to-width P wells connected with the third deep P well, the third high depth-to-width P well and the fourth high depth-to-width P well are connected to form a first small island, the third deep P well, the fourth high depth-to-width P well and the fifth high depth-to-width P well are connected to form a second small island, the third deep P well, the fifth high depth-to-width P well and the sixth high depth-to-width P well are connected to form a third small island, and the third deep P well, the sixth high depth-to-width P well and the seventh high depth-to-width P well are connected to form a fourth small island;
the first island is provided with a capacitor, the second island is provided with an NPN transistor, the third island is provided with a PNP transistor, the fourth island is provided with a resistor, and the capacitor, the NPN transistor, the PNP transistor and the resistor are electrically connected with each other to form a back-end circuit;
the upper surface of the first island is covered with third SiO 2 Layer, third SiO 2 Layer and first SiO contained in optical coupler based on heterojunction film light source 2 Forming a dielectric layer of the whole integrated circuit by layer integral forming;
the power electrode, the output electrode and the ground electrode of the back-end circuit are led out from the upper part of the first island, the positive electrode of the silicon photodetector of the optical coupler based on the heterojunction film light source is connected with the input electrode of the back-end circuit, the negative electrode of the silicon photodetector of the optical coupler based on the heterojunction film light source is connected with the ground electrode of the back-end circuit, and the back-end circuit is a pre-amplifying circuit.
8. The method for manufacturing the amplifying integrated circuit of the optical coupler based on the heterojunction thin-film light source as claimed in claim 7, comprising the following steps in sequence:
(one) selecting n-doped silicon wafer as the firstThe second substrate, with the help of mask, uses ion implantation technology, first completes the second deep P well, the first high depth-to-width ratio P on the second substrate in turn ＋ Well and second high aspect ratio P ＋ The manufacturing of the well, a first big island and a second big island are formed; then completing the manufacture of a third deep P well and third to seventh high depth-to-width ratio P wells in the first large island to form first to fourth small islands; then completing the manufacture of the first deep P well, the first high depth-to-width ratio P well and the second high depth-to-width ratio P well in the second large island to form a first island, and finally completing the first thin P in the upper part of the first island + Manufacturing a trap;
secondly, using a mask plate, and adopting an ion implantation process to correspondingly manufacture a capacitor, an NPN transistor, a PNP transistor and a resistor in the first island to the fourth island respectively;
thirdly, plating a layer of TiO on the upper surface of the first substrate by adopting a sputtering process 2 Thin film, and then adopting inductively coupled plasma etching process to make TiO 2 Etching the film to remove excessive TiO 2 Thin film with width smaller than that of the first thin film P + TiO of well width 2 A thin film layer;
fourthly, a low-pressure chemical vapor deposition method is adopted to grow and form a dielectric layer on the upper surface of the second substrate so as to play a role in electrical isolation;
carrying out planarization treatment on the surfaces of the dielectric layer and the TiO2 film layer by adopting a chemical mechanical polishing process, so that the thicknesses of the TiO2 film layer and the dielectric layer are the same;
(VI) in the same procedure as in the steps six to eight, in TiO 2 The manufacturing of other parts of the optical coupler based on the heterojunction thin-film light source is completed above the thin-film layer;
etching the regions of the dielectric layer above the first island to the fourth island by adopting an inductively coupled plasma etching process to respectively form electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor;
manufacturing aluminum electrodes in electrode through holes of a capacitor, an NPN transistor, a PNP transistor and a resistor by magnetron sputtering, etching redundant aluminum metal, completing electric connection among the capacitor, the NPN transistor, the PNP transistor and the resistor to form a back-end circuit, and finally completing connection between a silicon photodetector anode of an optocoupler based on a heterojunction thin-film light source and an input electrode of the back-end circuit and connection between a silicon photodetector cathode of the optocoupler based on the heterojunction thin-film light source and a ground electrode of the back-end circuit;
a power electrode, an output electrode and a ground electrode of a back-end circuit are led out from above the first island; leading out a light source anode and a light source cathode of an optical coupler based on a heterojunction thin film light source from above the second island;
and (ten) carrying out low-temperature annealing to enable all metal electrodes contained in the optocoupler and the back-end circuit based on the heterojunction thin-film light source to form ohmic contact with the corresponding positions respectively.
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Effective date of registration: 20200526 Address after: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant after: University of Electronic Science and Technology of China Applicant after: GUANG'AN VOCATIONAL AND TECHNICAL College Applicant after: CHONGQING ZHONGKE YUXIN ELECTRONIC Co.,Ltd. Applicant after: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant after: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. Applicant after: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant after: GUANGDONG CHENGLITAI TECHNOLOGY CO.,LTD. Applicant after: SICHUAN JINGHUI SEMICONDUCTOR Co.,Ltd. Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant before: University of Electronic Science and Technology of China Applicant before: China Chippacking Technology Co.,Ltd. Applicant before: GUANG'AN VOCATIONAL AND TECHNICAL College Applicant before: CHONGQING ZHONGKE YUXIN ELECTRONIC Co.,Ltd. Applicant before: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant before: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. Applicant before: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant before: GUANGDONG CHENGLITAI TECHNOLOGY Co.,Ltd. Applicant before: SICHUAN JINGHUI SEMICONDUCTOR Co.,Ltd. |
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