CN113725207A - Transmission gain adjustable high-precision linear optocoupler structure and coupling method thereof - Google Patents
Transmission gain adjustable high-precision linear optocoupler structure and coupling method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of linear photoelectric isolators, in particular to a high-precision linear optocoupler structure with adjustable transmission gain and a coupling method thereof, wherein the high-precision linear optocoupler with adjustable transmission gain comprises a base, a photosensitive integration plate, a cover plate and a packaging shell; the base, the photosensitive integrated board and the cover plate are hermetically packaged by the packaging shell; a groove is arranged in the base and used for placing the photosensitive integrated plate and the cover plate; the photosensitive integrated board comprises a bottom plate, two metal bonding pads, two gold conduction bands, two photoelectric detector chips, a first ceramic step and a second ceramic step; the cover plate comprises a fixing plate, a short gold conduction band, a long gold conduction band, two transverse semicircular gaps, two longitudinal semicircular gaps and an LED chip; the invention effectively solves the technical problem that the transmission gain of the linear optocoupler can not be flexibly adjusted and improves the transmission precision.
Description
Technical Field
The invention relates to the technical field of linear photoelectric isolation devices, in particular to a high-precision linear optocoupler structure with adjustable transmission gain and a coupling method thereof.
Background
In the field of signal isolation transmission, because the photoelectric isolation uses optical signals as transmission media through the light-emitting device and the photosensitive device, the photoelectric isolation has the advantages of unidirectional transmission, strong anti-interference capability, long service life, no contact point and the like, and is widely used in various measurement systems.
In the field of photoelectric isolation transmission of analog signals, a circuit commonly used in comparison consists of a linear optocoupler, a feedback circuit and a transimpedance amplification output circuit, wherein the transmission gain of the analog signals depends on the transmission gain of a linear optocoupler device, and the transmission gain of the linear optocoupler device depends on the ratio of the photocurrents of an output photoelectric detector and an input photoelectric detector.
At present, in overseas major linear optocoupler device manufacturers, typical linear optocoupler products such as IL300 series of the VISHAY company, HCNR200/2001 of the Agilent company, and TIL300/300A series of the TI company are plastic package device products, due to the influence of batch differences of production processes, plastic package molds, internal structures, and photodetectors, a transmission gain and a distribution interval of each device are large, a transmission gain deviation is greater than 5%, for example, HCNR200 has a transmission gain of 0.85 to 1.15, HCNR201 has a transmission gain of 0.93 to 1.07, IL300 has a transmission gain of 0.56 to 1.65, TIL300 has a transmission gain of 0.75 to 1.25, and TIL300A has a transmission gain of 0.9 to 1.1, and glue is injected inside the device to cause a large transmission gain deviation under high and low temperature environments, so that each linear optocoupler in actual circuit use needs to be configured with different high-precision debugging resistors to solve the problem of insufficient transmission precision, and the optocoupler is relatively complex to use, in addition, the transmission gain cannot be adjusted according to the actual used circuit, and the use requirement of flexible adjustment of analog signal transmission cannot be met.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-precision linear structure optical coupler with adjustable transmission gain and a coupling method thereof, wherein the high-precision linear structure optical coupler with adjustable transmission gain comprises a base 1, a photosensitive integration plate 2, a cover plate 3 and a packaging shell; the base 1, the photosensitive integration plate 2 and the cover plate 3 are hermetically packaged by the packaging shell; wherein:
a groove is arranged in the base 1 and used for placing the photosensitive integration plate 2 and the cover plate 3;
the photosensitive integrated board 2 comprises a bottom plate 21, two metal pads 22, two gold conduction bands 23, two photoelectric detector chips 24, a first ceramic step 25 and a second ceramic step 26; the first ceramic step 25 and the second ceramic step 26 are respectively provided; gold plating is carried out on the upper surfaces of the ceramic steps at the left end and the right end of the bottom plate 21 and is connected with corresponding metal outer pins of the packaging shell; the gold bonding pad 22 and the gold conduction band 23 are both arranged on the upper part of the upper plane of the bottom plate 21, and the two gold bonding pads and the two gold conduction bands are respectively connected with corresponding metal outer pins of the packaging shell; the two photoelectric detector chips 24 are respectively arranged on the two gold bonding pads 22, back electrodes of the two photoelectric detector chips 24 are respectively connected with the corresponding metal outer pins of the packaging shell through the gold bonding pads 22, and front electrodes of the two photoelectric detector chips 24 are respectively bonded to the two gold conduction bands 23 through gold wires and are respectively connected with the corresponding metal outer pins of the packaging shell; one surface of the cover plate 3 provided with the metal guide sheet is placed right above the photosensitive integration plate 2, the short metal guide sheet 32 on the cover plate 3 is in contact conduction with the step metal guide sheet 25 of the photosensitive integration plate 2, and the long metal guide sheet 32 on the cover plate is in contact conduction with the step metal guide sheet 26 of the photosensitive integration plate 2;
the cover plate 3 comprises a fixing plate 31, a short gold conduction band 32, a long gold conduction band 33, two transverse semicircular notches 34, two longitudinal semicircular notches 35 and an LED chip 36; the short metal guide plate 32 is arranged on the upper part of the upper plane of the fixing plate 31; the long metal guide sheet 33 is arranged at the lower part of the upper plane of the fixing plate 31; the two transverse semicircular notches 34 are respectively arranged at the centers of the two sides of the fixing plate in the transverse direction, the two longitudinal semicircular notches 35 are respectively arranged at the centers of the two sides of the fixing plate in the longitudinal direction, and the transverse semicircular notches and the longitudinal semicircular notches are both subjected to gold plating treatment and are communicated with corresponding short gold conduction bands or long gold conduction bands; the LED chip 36 is arranged on the long gold conduction band 33, the back electrode of the chip is connected with the long gold conduction band 33, and the front electrode is connected with the short gold conduction band 32 through a gold wire.
Further, the LED chip 36 is a double-heterojunction LED with AlGaAs/GaAs/AlGaAs front-side light emission, where GaAs is used as an active region and AlGaAs with different compositions is used as a confinement layer; growing a distributed Bragg reflection layer on a substrate; a fork-shaped electrode structure is adopted to provide uniformly distributed current for the light source.
Further, the area of the photosensitive integration plate 2 of the base 1 is larger than that of the cover plate 3.
Further, when two photodetectors 24 are disposed, the two photodetectors are distributed on the base 24 in a central symmetry manner.
Further, when the LED light source chip 36 is placed, the LED light source chip 36 is disposed on the cover plate 3 at a position close to the center of the cover plate, and the light emitting surface of the LED light source chip 36 is coupled with the photosensitive surfaces of the two photodetectors 24 in a centrosymmetric manner.
Further, the package housing is a dual in-line sealable ceramic metalized case, and a metal outer pin on the case is electrically connected to the LED light source chip 36 and the two photodetectors 24 through an inner metal pad and a metal conduction band, respectively.
Further, the LED light source chip 36 has a structure that:
the substrate is doped with GaAsn-type Si, n is 3 × 1018cm-3；
The 1 st layer is GaAs buffer layer, doped with n-type Si, n is 6 × 1018cm-3，0.5mm；
The 4 th layer is an active layer GaAs, and the P type Zn is lightly doped with n as 2 multiplied by 1017cm-3，2.2mm；
The 5 th layer is Al0.2Ga0.8As confinement layer, P-type Zn doping, n 5 × 1018cm-3，0.7mm；
The 6 th layer is 7 pairs of Ga0.9Al0.1As and AlAs material DBR structure: ga0.9Al0.1The As growth thickness h is 61.8 nm; the growth thickness h of AlAs is 75 nm; n-type Si doping, n being 5X 1018cm-3；
The 7 th layer is Al0.1Ga0.9As～Al0.5Ga0.5An As graded layer, P-type Zn doping, n is 5 × 1018cm-3，0.15μm；
The 8 th layer is Al0.5Ga0.5As current spreading layer, P-type Zn doping, n is 5 × 1018cm-3，6mm；
The 9 th layer is a heavily doped P-type GaAs top layer, is doped with Zn, and has n of 2 × 1019cm-3，0.1mm；
Where n represents the doping concentration of the doping, which is a customary expression for a person skilled in the art.
The invention also provides a coupling method of the high-precision linear optocoupler with adjustable transmission gain, which comprises the following steps:
step 1: a micropositioner 5 is arranged, and the micropositioner can realize X, Y, Z three-axis displacement movement through an adjusting knob 51;
step 2: a special groove socket 52 is arranged on the micro-motion platform 5, a metal clamping groove is arranged in each groove socket, the packaging shell can be clamped, and the metal outer pins of the packaging shell are correspondingly connected one by one through the metal clamping grooves;
and step 3: when the air-tight packaging is not carried out, a packaging shell comprising the base 1 and the photosensitive integration plate 2 is arranged in the groove socket 52, and an electric lead is arranged in the groove socket 52, so that the metal outer pin of the packaging shell can be electrically connected, namely the electric connection of each electrode of the photoelectric detector 24 is realized;
and 4, step 4: a special metal tweezers fixture 53 is arranged, the two ends of the metal tweezers fixture are respectively connected with the positive end and the negative end of the current source,
horizontally clamping the semicircular notches 33 at the two transverse sides or the semicircular notches 34 at the two longitudinal sides on the cover plate 3 by using metal tweezers 53, adding a certain current at the two ends of the metal tweezers clamp 53 through a constant current source, wherein the current flows into the light source chip 36 through the gold-plated conduction bands of the semicircular notches 33 at the two transverse sides or the semicircular notches 34 at the two longitudinal sides on the cover plate 3 and then flows into the long metal guide sheet and the short metal guide sheet, so that the light source chip emits light;
and 5: the cover plate 3 is moved to the position right above the base 1 through the metal tweezers fixture 53, the two photoelectric detectors 24 on the photosensitive integration plate 2 generate light current under the light emitting action of the light source chip, and the light current is connected with corresponding electric leads through the metal outer pins of the packaging shell and the metal clamping grooves in the groove socket;
step 6: the photoelectric current of the two photoelectric detectors 24 is measured by connecting an electric lead with a multimeter, the ratio of the two photoelectric currents is the transmission gain of the linear optocoupler, and the transmission gain is adjusted by adjusting a knob 51 of the coupling table and controlling the relative position relationship between the cover plate 3 and the packaging shell;
and 7: after the relative position of the cover plate 3 and the package housing is determined according to the required transmission gain, the short metal conduction band 32 and the long metal conduction band 33 on the two sides of the metal surface of the cover plate 3 are respectively connected and solidified with the step metal sheets 25 and 26 on the photosensitive integration plate 2 through instant adhesive and conductive adhesive fixation.
The beneficial technical effects of the invention are as follows:
(1) an LED light emitting diode chip is adopted as a double heterojunction light emitting diode with AlGaAs/GaAs/AlGaAs front surface emitting light, GaAs is used as an active region, and AlGaAs with different components is used as a limiting layer; growing a Distributed Bragg Reflector (DBR) on a substrate; the fork-shaped electrode structure is adopted to provide uniformly distributed current for the light source, and the precision and the nonlinearity of the linear optocoupler can be improved.
(2) The PIN silicon-based photoelectric detector chip has optimized design on an antireflection film gold in the chip, adopts a multilayer structure formed by combining silicon nitride and silicon dioxide films, greatly improves the incidence rate of the antireflection film, optimizes the spectral response consistency and quantum efficiency of the photoelectric detector, further optimizes the process conditions of annealing temperature and annealing time of the chip, ion implantation energy, dosage and the like in the aspect of chip preparation process, can effectively reduce the dark current of the photoelectric detector and improve the parameter consistency of the detector chips on the same batch of wafers, and is favorable for improving the precision of linear optical coupler transmission gain and reducing temperature drift.
(3) The ceramic cover plate is innovatively designed, and comprises 4 transverse and longitudinal gold-plated semicircular gaps, and is simultaneously conducted with two electrodes of an LED light source chip, the current input of the light source chip can be simultaneously realized by flexibly clamping the cover plate through a metal tweezers, when a light source emits light, a micro-motion table is moved, the relative position relation of the light source chip and a detector chip is changed, the transmission gain of a linear optical coupler can be monitored through an external digital table, in addition, the measurement of the transmission gain precision under the condition of continuous current input can be realized, and the adjustment of the transmission gain parameters is carried out according to the actual use requirement of a circuit, so that the technical problem that the transmission gain of the linear optical coupler cannot be flexibly adjusted is effectively solved, and the transmission precision is improved. The maximum transmission gain range of foreign products is 0.56-1.65, the adjustable transmission gain range of products developed based on the method is 0.1-10, the transmission precision can be controlled within 0.1%, and the parameter consistency of batch products is good.
In addition, based on the coupling method, improvement and optimization can be carried out, full-automatic coupling is realized, and the coupling method can be popularized and applied to the similar photoelectric isolation devices needing parameter coupling.
Drawings
FIG. 1 is a schematic structural diagram of a photosensitive integration plate of a high-precision linear optocoupler with adjustable transmission gain according to the present invention;
FIG. 2 is a schematic diagram of a cover plate structure of a high-precision linear optocoupler with adjustable transmission gain according to the present invention;
FIG. 3 is a schematic diagram of a micro-stage structure in a coupling method of a high-precision linear optocoupler with adjustable transmission gain according to the present invention;
fig. 4 is a schematic diagram of an overall structure of a high-precision linear optocoupler with adjustable transmission gain according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
In this embodiment, a high-precision linear optocoupler structure with adjustable transmission gain, as shown in fig. 1, includes a base 1, a photosensitive integration board 2, a cover plate 3, and a package housing;
a groove is arranged in the base 1 and used for placing the photosensitive integration plate 2 and the cover plate 3;
as shown in fig. 1, the photosensitive integration board 2 includes: a bottom plate 21, two metal pads 22, two gold conduction bands 23, two photodetector chips 24, and two ceramic steps 24; the ceramic steps 25 and 26 are respectively arranged at the left end and the right end of the bottom plate 21, the upper surface of the ceramic step is plated with gold and is connected with the corresponding metal outer pin of the packaging shell; the gold bonding pad 22 and the gold conduction band 23 are both arranged on the upper part of the upper plane of the bottom plate 21, and the two gold bonding pads and the two gold conduction bands are respectively connected with corresponding metal outer pins of the packaging shell; the two photoelectric detector chips 24 are respectively arranged on the two gold bonding pads 22, back electrodes of the two photoelectric detector chips 24 are respectively connected with the corresponding metal outer pins of the packaging shell through the gold bonding pads 22, and front electrodes of the two photoelectric detector chips 24 are respectively bonded to the two gold conduction bands 23 through gold wires and are respectively connected with the corresponding metal outer pins of the packaging shell;
as shown in fig. 2, the cover plate 3 includes a fixing plate 31, a short gold tape 32, a long gold tape 33, two transverse semicircular notches 34, two longitudinal semicircular notches 35, and an LED chip 36; the short metal guide plate 32 is arranged on the upper part of the upper plane of the fixing plate 31; the long metal guide sheet 33 is arranged at the lower part of the upper plane of the fixing plate 31; the two transverse semicircular notches 34 are respectively arranged at the centers of the two sides of the fixing plate in the transverse direction, the two longitudinal semicircular notches 35 are respectively arranged at the centers of the two sides of the fixing plate in the longitudinal direction, and the transverse semicircular notches and the longitudinal semicircular notches are both subjected to gold plating treatment and are communicated with corresponding short gold conduction bands or long gold conduction bands; the LED chip 36 is arranged on the long gold conduction band 33, the back electrode of the chip is connected with the long gold conduction band 33, and the front electrode is connected with the short gold conduction band 32 through a gold wire;
one surface of the cover plate 3 provided with the metal guide sheet is placed right above the photosensitive integration plate 2, the short metal guide sheet 32 on the cover plate 3 is in contact conduction with the step metal guide sheet 25 of the photosensitive integration plate 2, the long metal guide sheet 32 on the cover plate is in contact conduction with the step metal guide sheet 26 of the photosensitive integration plate 2,
and the base 1, the photosensitive integrated board 2 and the cover plate 3 are hermetically packaged by adopting a packaging shell.
Preferably, the LED light emitting diode chip 1 is a double heterojunction light emitting diode with AlGaAs/GaAs/AlGaAs front surface emitting, GaAs is used as an active region, and AlGaAs with different compositions is used as a confinement layer; growing a Distributed Bragg Reflector (DBR) on a substrate; the fork-shaped electrode structure is adopted to provide uniformly distributed current for the light source, and the precision and the nonlinearity of the linear optocoupler can be improved.
The light source chip structure adopted in this embodiment is:
the substrate is doped with GaAsn-type Si, n is 3 × 1018cm-3；
The 1 st layer is GaAs buffer layer, doped with n-type Si, n is 6 × 1018cm-3，0.5mm；
The 4 th layer is an active layer GaAs, and the P type Zn is lightly doped with n as 2 multiplied by 1017cm-3，2.2mm；
The 5 th layer is Al0.2Ga0.8As confinement layer, P-type Zn doping, n 5 × 1018cm-3，0.7mm；
The 6 th layer is 7 pairs of Ga0.9Al0.1As and AlAs material DBR structure: ga0.9Al0.1The As growth thickness h is 61.8 nm; the growth thickness h of AlAs is 75 nm; n-type Si doping, n being 5X 1018cm-3；
The 7 th layer is Al0.1Ga0.9As～Al0.5Ga0.5An As graded layer, P-type Zn doping, n is 5 × 1018cm-3，0.15μm；
The 8 th layer is Al0.5Ga0.5As current spreading layer, P-type Zn doping, n is 5 × 1018cm-3，6mm；
The 9 th layer is a heavily doped P-type GaAs top layer, is doped with Zn, and has n of 2 × 1019cm-3，0.1mm。
As an optional implementation mode, AlGaAs/GaAs and AlGaAs/AlGaAs material systems are adopted to carry out structural design of a light source, GaAs is used as an active region material, AlGaAs with different components is used as a limiting layer to emit red light with a waveband of 850nm to 880nm, in order to break through the difficulty that the light escape rate is low caused by factors such as substrate light absorption, metal electrode blocking and the like and improve the output power of an LED, a growth DBR (distributed Bragg reflector) can isolate substrate absorption, a reflector is alternately composed of high-low refractive index materials, and an RCLED (resonance enhanced light emitting diode) epitaxial structure with two DBR (distributed Bragg reflector) reflectors is adopted. A fork-shaped electrode structure is adopted to provide uniformly distributed current for a light source, and light is guaranteed to escape from an active area and is not blocked by the electrode.
In the embodiment, the PIN silicon-based photoelectric detector chip optimizes the antireflection film gold in the chip, adopts a multilayer structure formed by combining silicon nitride and silicon dioxide films, greatly improves the incidence rate of the antireflection film, optimizes the spectral response consistency and quantum efficiency of the photoelectric detector, further optimizes the process conditions of the chip such as annealing temperature and annealing time, ion implantation energy and dosage and the like in the aspect of chip preparation process, can effectively reduce the dark current of the photoelectric detector and improve the parameter consistency of the detector chips on the same batch of wafers, and is favorable for improving the precision of linear optical coupler transmission gain and reducing temperature drift.
Example 2
In this embodiment, a coupling method for a high-precision linear optocoupler structure with adjustable transmission gain is provided, including:
step 1: as shown in fig. 3, a micropositioner 5 is provided, which can realize X, Y, Z three axial displacement movements through an adjusting knob 51;
step 2: a special groove socket (52) is arranged on the micro-motion platform 5, a metal clamping groove is arranged in each groove socket, the packaging shell can be clamped, and the metal outer pins of the packaging shell 4 are connected in a one-to-one correspondence mode through the metal clamping grooves;
and step 3: a packaging shell (not hermetically packaged) comprising a base 1 and a photosensitive integrated board 2 is arranged in a groove socket (52), an electric lead is arranged in the groove socket (52), and the electric connection of metal outer pins of the packaging shell, namely the electric connection of each electrode of the photoelectric detector 24, can be realized;
and 4, step 4: a special metal tweezers fixture 53 is arranged, the two ends of the metal tweezers fixture are respectively connected with the positive end and the negative end of the current source,
horizontally clamping the semicircular notches 33 at the two transverse sides or the semicircular notches 34 at the two longitudinal sides on the cover plate 3 by using metal tweezers 53, adding a certain current at the two ends of the metal tweezers clamp 53 through a constant current source, wherein the current flows into the LED chip 36 through the gold-plated conduction bands of the semicircular notches 33 at the two transverse sides or the semicircular notches 34 at the two longitudinal sides on the cover plate 3 and the long metal guide strip and the short metal guide strip, so that the light source chip emits light;
and 5: the cover plate 3 is moved to the position right above the base 1 through the metal tweezers fixture 53, the two photoelectric detectors 24 on the photosensitive integration plate 2 generate light current under the light emitting action of the light source chip, and the light current is connected with corresponding electric leads through the metal outer pins of the packaging shell and the metal clamping grooves in the groove socket;
step 6: the photoelectric current of the two photoelectric detectors 24 is measured by connecting an electric lead with a multimeter, the ratio of the two photoelectric currents is the transmission gain of the linear optocoupler, and the transmission gain can be adjusted by adjusting a knob 51 of the coupling table and controlling the relative position relationship between the cover plate 3 and the packaging shell;
and 7: after the relative position of the cover plate 3 and the package housing is determined according to the required transmission gain, the short metal conduction band 32 and the long metal conduction band 33 on the two sides of the metal surface of the cover plate 3 are respectively connected and solidified with the first step metal sheet 25 and the second step metal sheet 26 on the photosensitive integration plate 2 through instant adhesive and conductive adhesive fixation.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "rotated," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A high-precision linear optocoupler structure with adjustable transmission gain is characterized by comprising a base (1), a photosensitive integration plate (2), a cover plate (3) and a packaging shell; the base (1), the photosensitive integration plate (2) and the cover plate (3) are hermetically packaged by the packaging shell; wherein:
a groove is formed in the base (1) and used for placing the photosensitive integration plate (2) and the cover plate (3);
the photosensitive integrated board (2) comprises a bottom board (21), two metal bonding pads (22), two gold conduction bands (23), two photoelectric detector chips (24), a first ceramic step (25) and a second ceramic step (26); the first ceramic step (25) and the second ceramic step (26) are respectively arranged; gold plating treatment is carried out on the upper surfaces of the ceramic steps at the left end and the right end of the bottom plate (21) and the ceramic steps are connected with corresponding metal outer pins of the packaging shell; the gold bonding pads (22) and the gold conduction bands (23) are arranged on the upper portion of the upper plane of the bottom plate (21), and the two gold bonding pads and the two gold conduction bands are respectively connected with corresponding metal outer pins of the packaging shell; the two photoelectric detector chips (24) are respectively arranged on the two gold bonding pads (22), back electrodes of the two photoelectric detector chips (24) are respectively connected with the corresponding metal outer pins of the packaging shell through the gold bonding pads (22), and front electrodes of the two photoelectric detector chips (24) are respectively bonded to the two gold conduction bands (23) through gold wires and are respectively connected with the corresponding metal outer pins of the packaging shell;
the cover plate (3) comprises a fixing plate (31), a short gold conduction band (32), a long gold conduction band (33), two transverse semicircular gaps (34), two longitudinal semicircular gaps (35) and an LED chip (36); the short metal guide sheet (32) is arranged on the upper part of the upper plane of the fixing plate (31); the long metal guide sheet (33) is arranged at the lower part of the upper plane of the fixing plate (31); the two transverse semicircular gaps (34) are respectively arranged at the centers of the two sides of the fixing plate in the transverse direction, the two longitudinal semicircular gaps (35) are respectively arranged at the centers of the two sides of the fixing plate in the longitudinal direction, and the transverse semicircular gaps and the longitudinal semicircular gaps are both subjected to gold plating treatment and are communicated with corresponding short gold conduction bands or long gold conduction bands; the LED chip (36) is arranged on the long gold conduction band (33), the back electrode of the chip is connected with the long gold conduction band (33), and the front electrode is connected with the short gold conduction band (32) through a gold wire; the one side that is provided with the metal guide sheet on apron (3) is placed directly over photosensitive integrated board 2, and short metal guide sheet (32) on apron (3) switches on with the contact of first ceramic step (25) of photosensitive integrated board (2), and long metal guide sheet (32) on the apron switches on with the contact of second ceramic step (26) of photosensitive integrated board (2).
2. The high-precision linear optocoupler structure with adjustable transmission gain according to claim 1, characterized in that the LED chip (36) is a double-heterojunction LED with AlGaAs/GaAs/AlGaAs front-emitting, with GaAs as the active region and AlGaAs of different composition as the confinement layer; growing a distributed Bragg reflection layer on a substrate; a fork-shaped electrode structure is adopted to provide uniformly distributed current for the light source.
3. The high-precision linear optical coupler structure with adjustable transmission gain as claimed in claim 1, wherein the area of the photosensitive integration plate (2) of the base (1) is larger than that of the cover plate (3).
4. The high-precision linear optocoupler structure with adjustable transmission gain according to claim 1, wherein when two photodetectors (24) are placed, the two photodetectors are distributed on the base (24) in a central symmetry manner.
5. The high-precision linear optical coupler structure with adjustable transmission gain as claimed in claim 1, wherein when the LED light source chip (36) is placed, the LED light source chip (36) is disposed on the cover plate (3) with the long metal conduction band near the center of the cover plate, and the light emitting surface of the LED light source chip (36) is coupled with the photosensitive surfaces of the two photodetectors (24) in a central symmetry manner.
6. The high-precision linear optical coupler structure with adjustable transmission gain as claimed in claim 1, wherein the package housing is a dual in-line sealable ceramic metalized shell, and a metal outer pin on the shell is electrically connected with the LED light source chip (36) and the two photodetectors (24) through an internal metal pad and a metal conduction band, respectively.
7. The high-precision linear optocoupler structure with adjustable transmission gain according to claim 5 or 6, characterized in that the LED light source chip (36) has a structure:
the substrate is doped with GaAs n-type Si, n is 3 × 1018cm-3；
The 1 st layer is GaAs buffer layer, doped with n-type Si, n is 6 × 1018cm-3，0.5mm；
Layer 2 of 31 pairs Ga0.9Al0.1As and AlAs material DBR structure: ga0.9Al0.1The As growth thickness h is 61.8 nm; AlAs growth thickness h is 75nm, n-type Si doping, n is 2X 1018cm-3；
Layer 3 is Al0.2Ga0.8An As lower limiting layer, n-type Si doping, n 2 × 1018cm-3，0.5mm；
The 4 th layer is an active layer GaAs, and the P type Zn is lightly doped with n as 2 multiplied by 1017cm-3，2.2mm；
The 5 th layer is Al0.2Ga0.8An As confinement layer, a P-type Zn doping,n＝5×1018cm-3，0.7mm；
the 6 th layer is 7 pairs of Ga0.9Al0.1As and AlAs material DBR structure: ga0.9Al0.1The As growth thickness h is 61.8 nm; the growth thickness h of AlAs is 75 nm; n-type Si doping, n being 5X 1018cm-3；
The 7 th layer is Al0.1Ga0.9As～Al0.5Ga0.5An As graded layer, P-type Zn doping, n is 5 × 1018cm-3，0.15μm；
The 8 th layer is Al0.5Ga0.5As current spreading layer, P-type Zn doping, n is 5 × 1018cm-3，6mm；
The 9 th layer is a heavily doped P-type GaAs top layer, is doped with Zn, and has n of 2 × 1019cm-3，0.1mm。
8. A coupling method of a high-precision linear optocoupler structure with adjustable transmission gain is characterized by comprising the following steps:
step 1: a micropositioner (5) is arranged, and the micropositioner can realize X, Y, Z three-axis displacement movement through an adjusting knob (51);
step 2: a special groove socket 52 is arranged on the micropositioner (5), a metal clamping groove is arranged in each groove socket, the packaging shell can be clamped, and the metal outer pins of the packaging shell are correspondingly connected one by one through the metal clamping grooves;
and step 3: when the air-tight packaging is not carried out, a packaging shell comprising a base (1) and a photosensitive integrated board (2) is arranged in a groove socket (52), an electric lead is arranged in the groove socket (52), and the electric connection of metal outer pins of the packaging shell, namely the electric connection of each electrode of the photoelectric detector (24), can be realized;
and 4, step 4: a special metal tweezers fixture (53) is arranged, the two ends of the metal tweezers fixture are respectively connected with the positive end and the negative end of the current source,
horizontally clamping semicircular gaps (33) at two transverse sides or semicircular gaps (34) at two longitudinal sides on a cover plate (3) by using metal tweezers (53), adding a certain current at two ends of the metal tweezers clamp (53) through a constant current source, and enabling the current to flow into an LED chip (36) through a long metal guide sheet and a short metal guide sheet by virtue of gold-plated conduction bands of the semicircular gaps (33) at two transverse sides or the semicircular gaps (34) at two longitudinal sides on the cover plate (3) so as to enable the light source chip to emit light;
and 5: the cover plate (3) is moved to the position right above the base (1) through the metal tweezers fixture (53), two photoelectric detectors (24) on the photosensitive integration plate (2) generate photoelectric current under the light emitting effect of the light source chip, and the photoelectric detectors are connected with corresponding electric leads through metal outer pins of the packaging shell and metal clamping grooves in the groove socket;
step 6: the photoelectric current of the two photoelectric detectors (24) is measured by connecting an electric lead with a universal meter, the ratio of the two photoelectric currents is the transmission gain of the linear optocoupler, and the transmission gain is adjusted by adjusting a knob (51) of the coupling table and controlling the relative position relationship between the cover plate (3) and the packaging shell;
and 7: after the relative position of the cover plate (3) and the packaging shell is determined according to the transmission gain required, the short metal conduction band (32) and the long metal conduction band (33) on the two sides of the metal surface of the cover plate (3) are respectively connected and cured with the first ceramic step (25) and the second ceramic step (26) on the photosensitive integration plate (2) through instant adhesive and conductive adhesive fixation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110907687.7A CN113725207B (en) | 2021-08-09 | High-precision linear optical coupler structure with adjustable transmission gain and coupling method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110907687.7A CN113725207B (en) | 2021-08-09 | High-precision linear optical coupler structure with adjustable transmission gain and coupling method thereof |
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| CN113725207A true CN113725207A (en) | 2021-11-30 |
| CN113725207B CN113725207B (en) | 2024-07-05 |
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| JP2000114581A (en) * | 1998-10-09 | 2000-04-21 | Fujitsu Ltd | Multilayered photoelectron substrate with electrical intercoupling and optical intercoupling, and manufacture thereof |
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| US20160276327A1 (en) * | 2015-03-20 | 2016-09-22 | Lextar Electronics Corporation | Photocoupler package |
| CN112331644A (en) * | 2020-11-09 | 2021-02-05 | 中国电子科技集团公司第四十四研究所 | Anti-irradiation high-speed photoelectric coupler and manufacturing method thereof |
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| EP0566278A1 (en) * | 1992-04-17 | 1993-10-20 | Nec Corporation | Semiconductor photocoupler |
| JP2000114581A (en) * | 1998-10-09 | 2000-04-21 | Fujitsu Ltd | Multilayered photoelectron substrate with electrical intercoupling and optical intercoupling, and manufacture thereof |
| US20090290386A1 (en) * | 2008-05-21 | 2009-11-26 | Sharp Kabushiki Kaisha | Photocoupler and switching power supply circuit |
| US20160276327A1 (en) * | 2015-03-20 | 2016-09-22 | Lextar Electronics Corporation | Photocoupler package |
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