CN203339165U - Double-channel surface-mounted high-speed photoelectric coupler - Google Patents
Double-channel surface-mounted high-speed photoelectric coupler Download PDFInfo
- Publication number
- CN203339165U CN203339165U CN2013204078947U CN201320407894U CN203339165U CN 203339165 U CN203339165 U CN 203339165U CN 2013204078947 U CN2013204078947 U CN 2013204078947U CN 201320407894 U CN201320407894 U CN 201320407894U CN 203339165 U CN203339165 U CN 203339165U
- Authority
- CN
- China
- Prior art keywords
- inner cover
- cover plate
- photoelectric coupler
- tube seat
- ceramic tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The utility model provides a mutual-emission type anti-interference double-channel surface-mounted high-speed photoelectric coupler. The photoelectric coupler comprises a ceramic tube seat. The ceramic tube seat is provided with two grooves, inner cover plates are disposed outside the grooves, a light-emitting chip is disposed under each inner cover plate, each light-emitting chip is provided with a gold wire connected with the corresponding inner cover plate, the bottom of each groove is provided with a photoelectric integrated chip, and the photoelectric integrated chips are connected with the ceramic tube seat via aluminum-silicon wires. An outer cover plate is disposed outside the two inner cover plates. The internal of the double-channel surface-mounted high-speed photoelectric coupler adopts the mutual-emission type light transmission structure in which a high-speed infrared light-emitting diode is coupled to the high-speed photoelectric integrated circuit. Metal ceramic is hermetically packaged, quality assurance grades are JANTX and JANTXV. An output of the photoelectric coupler is completely compatible with a TTL circuit and a COMS circuit, anti-interference performance is strong, and the maximum transmission rate is 10MB/s.
Description
Technical field
The utility model relates to a kind of photoelectrical coupler, especially a kind of two-way Surface Mount high-speed photoelectric coupler.
Background technology
Along with the development of China Aerospace cause, the space flight user requirement highly reliable to semiconductor device becomes increasingly conspicuous.Photoelectrical coupler inside before this, bonding between chip and carrier, between inner cover plate and carrier, mostly be the conducting resinl sintering process.But aging phenomenon can occur conducting resinl in longer-term storage, but also can slowly discharge pernicious gas.Along with increase memory time, can cause lead serious oxidation and corrosion to occur, finally cause component failure.Therefore, for improving the Stability and dependability of device, change the conducting resinl sintering process into the eutectic Welding imperative.
The utility model content
The utility model provides a kind of correlation, jamproof two-way Surface Mount high-speed photoelectric coupler.
Realize a kind of two-way Surface Mount high-speed photoelectric coupler of the utility model purpose, comprise ceramic tube seat, described ceramic tube seat is provided with two grooves, groove is provided with inner cover plate outward, the below of inner cover plate is provided with luminescence chip, described luminescence chip is provided with spun gold and is connected with inner cover plate, and described bottom portion of groove is provided with the photoelectricity integrated chip, and described photoelectricity integrated chip is connected with ceramic tube seat by Si-Al wire; Two inner cover plate outsides are provided with an outer cover plate.
The beneficial effect of a kind of two-way Surface Mount high-speed photoelectric coupler of the present utility model is as follows:
A kind of two-way Surface Mount high-speed photoelectric coupler of the present utility model, internal application high speed infrared light-emitting diode chip for backlight unit and high speed optoelectronic integrated circuit (IC) chip are coupled, the correlation optical transmission structure.The hermetically sealed encapsulation of cermet, the quality assurance grade is special army, super special corps level.Output and TTL, cmos circuit are fully compatible, strong interference immunity, maximum transmission rate 10MB/s.
The accompanying drawing explanation
The structural representation that Fig. 1 is a kind of two-way Surface Mount high-speed photoelectric coupler of the present utility model.
Embodiment
As shown in Figure 1, a kind of two-way Surface Mount high-speed photoelectric coupler of the present utility model, comprise ceramic tube seat 1, described ceramic tube seat 1 is provided with two grooves, groove is provided with inner cover plate 2 outward, and the below of inner cover plate 2 is provided with luminescence chip 4, and described luminescence chip 4 is provided with spun gold 5 and is connected with inner cover plate 2, described bottom portion of groove is provided with photoelectricity integrated chip 6, and described photoelectricity integrated chip 6 is connected with ceramic tube seat 1 by Si-Al wire 7; Two inner cover plate 2 outsides are provided with an outer cover plate 3.
The advantage of a kind of two-way Surface Mount high-speed photoelectric coupler of the present utility model is as follows:
A kind of two-way Surface Mount high-speed photoelectric coupler of the present utility model, internal application high speed infrared light-emitting diode chip for backlight unit and high speed optoelectronic integrated circuit (IC) chip are coupled, the correlation optical transmission structure.The hermetically sealed encapsulation of cermet, the quality assurance grade is special army, super special corps level.Output and TTL, cmos circuit are fully compatible, strong interference immunity, maximum transmission rate 10MB/s.
Embodiment recited above is described preferred implementation of the present utility model; not scope of the present utility model is limited; design under spiritual prerequisite not breaking away from the utility model; various distortion and improvement that the common engineers and technicians in this area make technical solutions of the utility model, all should fall in the definite protection range of claims of the present utility model.
Claims (1)
1. a two-way Surface Mount high-speed photoelectric coupler, it is characterized in that: comprise ceramic tube seat, described ceramic tube seat is provided with two grooves, groove is provided with inner cover plate outward, the below of inner cover plate is provided with luminescence chip, described luminescence chip is provided with spun gold and is connected with inner cover plate, and described bottom portion of groove is provided with the photoelectricity integrated chip, and described photoelectricity integrated chip is connected with ceramic tube seat by Si-Al wire; Two inner cover plate outsides are provided with an outer cover plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013204078947U CN203339165U (en) | 2013-07-10 | 2013-07-10 | Double-channel surface-mounted high-speed photoelectric coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013204078947U CN203339165U (en) | 2013-07-10 | 2013-07-10 | Double-channel surface-mounted high-speed photoelectric coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203339165U true CN203339165U (en) | 2013-12-11 |
Family
ID=49707827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013204078947U Expired - Lifetime CN203339165U (en) | 2013-07-10 | 2013-07-10 | Double-channel surface-mounted high-speed photoelectric coupler |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203339165U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112331644A (en) * | 2020-11-09 | 2021-02-05 | 中国电子科技集团公司第四十四研究所 | Anti-irradiation high-speed photoelectric coupler and manufacturing method thereof |
-
2013
- 2013-07-10 CN CN2013204078947U patent/CN203339165U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112331644A (en) * | 2020-11-09 | 2021-02-05 | 中国电子科技集团公司第四十四研究所 | Anti-irradiation high-speed photoelectric coupler and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101320773B (en) | Packaging method for improving LED external quantum efficiency and LED packaging structure | |
| CN203660271U (en) | 10G micro high-speed laser emitter | |
| CN103278891B (en) | High-speed light receiving unit of integrated clipping amplifier and preparation method thereof | |
| CN203339165U (en) | Double-channel surface-mounted high-speed photoelectric coupler | |
| CN203339164U (en) | Six-channel surfaced-mounted high-speed optoelectronic coupler | |
| CN201549505U (en) | Glass passivation packaging transient voltage suppression diode structure | |
| CN207366793U (en) | A kind of light receiving element structure | |
| CN203085520U (en) | A leading wire framework equipped with an isolating groove | |
| CN202712172U (en) | Multi-chip dual-base island SOP package structure | |
| CN206060725U (en) | High current door drives the hermetically sealed integrated-circuit photoelectric bonder of output | |
| CN201191618Y (en) | LED encapsulated by planoconvex spotlight | |
| CN211017074U (en) | L ED double luminous body structure | |
| CN203339163U (en) | Double-channel surface-mounted high-speed photoelectric coupler | |
| CN201717265U (en) | Bidirectional protection diode chip | |
| CN204118079U (en) | A kind of photoelectric sensor | |
| CN102969433A (en) | LED (Light-Emitting Diode) wafer modularized packaging process | |
| CN209087853U (en) | A kind of ceramic cartridge structure and its encapsulating structure | |
| CN202585527U (en) | Packaging structure of novel green light LED | |
| CN208538843U (en) | A kind of lead frame of semiconductor packaging structure | |
| CN205028900U (en) | High -speed optoelectronic coupler of anti irradiation | |
| CN202443423U (en) | Sensor module of optical mouse | |
| CN203707128U (en) | Combined COB packaging structure | |
| CN212209485U (en) | Rectifier bridge circuit module of rear TVS protection diode | |
| CN205429005U (en) | Led packaging structure | |
| CN202616290U (en) | LED with linear surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131211 |