CN112290378A - Semiconductor laser chip assembly for high-speed optical signal transmission - Google Patents
Semiconductor laser chip assembly for high-speed optical signal transmission Download PDFInfo
- Publication number
- CN112290378A CN112290378A CN202011304086.9A CN202011304086A CN112290378A CN 112290378 A CN112290378 A CN 112290378A CN 202011304086 A CN202011304086 A CN 202011304086A CN 112290378 A CN112290378 A CN 112290378A
- Authority
- CN
- China
- Prior art keywords
- laser chip
- resistor
- capacitor
- inductor
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
Abstract
The invention discloses a semiconductor laser chip component for high-speed optical signal transmission, which comprises: a laser chip; at least two leads for connecting external driving electrical signals; a capacitor; the back surface of the capacitor is in common with the laser chip; the front surface of the capacitor is connected with one of the leads; a resistor; the resistor is positioned between the laser chip and the capacitor; the resistor is connected with the capacitor in parallel; and a gold wire; one end of the gold wire is connected with the laser chip, and the other end of the gold wire is connected with the resistor. The laser chip assembly can increase the modulation bandwidth of the laser chip by selecting proper capacitance inductance and resistance, thereby realizing the transmission of high-speed optical signals by using the low-bandwidth laser chip with low cost and high reliability.
Description
Technical Field
The invention relates to a signal transmission device in the communication field, in particular to a semiconductor laser chip assembly for high-speed optical signal transmission.
Background
With the application of technologies such as high-definition video and 5G mobile communication and the explosive increase of information due to the popularization of the internet, communication networks face an increasing bandwidth increase pressure. The conventional 10G transmission technology is not enough to meet the current bandwidth requirement, and the development of 100G/400G transmission technology has become necessary. There are many challenges faced in upgrading from a conventional 10G network to over 100G. Of these, the most important is the need to develop a low-cost and reliable single-channel 25G or higher rate semiconductor laser chip, so that multiple single channels can be combined into a multi-channel 100G or higher optical device.
To increase the modulation rate of a semiconductor laser chip, the most direct method is to increase the intrinsic resonant frequency of the laser chip and reduce the parasitic effect of the chip. The former can be realized by adjusting the structure of the active region of the laser and reducing the photon lifetime, and the latter can be realized by reducing the series resistance and parasitic capacitance of the chip. These are generally achieved by adjusting the quantum wells in the active region of the chip (e.g., the number of quantum wells, strain, etc.) and shortening the cavity length of the chip (the cavity length is generally about 150 microns). Compared with a 10G chip, the 25G chip has the advantages that the modulation bandwidth is improved, and simultaneously, due to the higher photon density, the higher strain and the more obvious thermal effect of the short-cavity chip, the reliability of the 25G chip which needs to stably work under the temperature condition of-40 ℃ to 85 ℃ is greatly challenged. Therefore, the reliability of the chip has become one of the biggest challenges in mass production of 25G chips.
In addition, the shorter cavity length also causes more problems for post-processing processes such as chip cleavage coating, etc., so the yield of chips is another bottleneck of mass production of 25G chips. In order to solve the problems of production and reliability brought by a short-cavity chip, one method is to add a section of passive waveguide at the front end of the short-cavity chip so as to increase the length of the chip and ensure a shorter photon life. The method can integrate the active region and the passive waveguide on the same chip by a material growth method. However, the method requires the growth and butt joint of different materials with great technical difficulty, and at present, few manufacturers really master the technology internationally. In addition, multiple growth of material and increased chip size also increase the cost of the chip. It would therefore be of great practical significance if existing mature, slightly lower bandwidth chips could be utilized without increasing the chip modulation bandwidth through material growth and sacrificing chip reliability.
A conventional semiconductor laser chip package is shown in fig. 1, in which a laser chip 1 is fixed on a substrate 6, and the substrate 6 is located on a heat sink base 7. If a low-speed laser chip is adopted, the anode of the chip is directly connected with a lead wire connected with an electric signal through a gold wire; if a high-speed laser chip is adopted, generally for the purpose of reducing inductance generated by packaging, particularly gold wires, the laser chip 1 is placed on a substrate 6 with a metal film on the surface, the connection between the lead 5 and the substrate 6 is realized through a plurality of gold wires 8, and the anode of the laser chip 1 is connected to the substrate 6 through another gold wire 8, as shown in fig. 1, so that the length of the gold wire can be shortened and the inductance introduced by the gold wire can be reduced.
For laser chips with operating speed of 25G and above, in order to further reduce the length of gold wires and ensure impedance matching with microwave transmission as much as possible, the leads 5 and the substrate 6 are directly connected by solder instead of gold wires, as shown in fig. 2, so that the inductance introduced by the gold wires is further reduced. Therefore, it is generally considered that the package of the existing laser chip has a negative effect on the modulation bandwidth of the laser chip, and therefore the modulation bandwidth of the laser chip itself needs to be high enough to realize the transmission of high-speed optical signals.
However, the modulation bandwidth of the existing laser chip itself is not sufficient to realize the transmission of high-speed optical signals.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a semiconductor laser chip component for high-speed optical signal transmission, which can improve the modulation bandwidth of a semiconductor laser.
In order to solve the above technical problems, the technical solution of the semiconductor laser chip assembly for high-speed optical signal transmission according to the present invention is:
the method comprises the following steps: a laser chip; at least two leads for connecting external driving electrical signals; a capacitor; the back surface of the capacitor is in common with the laser chip; the front surface of the capacitor is connected with one of the leads; a resistor; the resistor is positioned between the laser chip and the capacitor; the capacitor is connected with the resistor in parallel; and a gold wire; one end of the gold wire is connected with the laser chip, and the other end of the gold wire is connected with the resistor.
In another embodiment, the self-inductance generated by the gold wire is between 0.01nH and 10 nH.
In another embodiment, the laser chip and the capacitor and resistor are sealed in one package.
In another embodiment, further comprising: an inductor; the inductor is connected with the resistor in series; the inductor and the resistor which are connected in series are connected with the capacitor in parallel; the inductor and the resistor which are connected in series are connected with the laser chip; the inductor and the resistor which are connected in series are positioned between the laser chip and the capacitor.
In another embodiment, the resonant frequency of the RLC circuit consisting of the inductor, the resistor and the capacitor is between 0.5 and 2 times the modulation frequency.
In another embodiment, the laser chip is sealed in a package with the inductor, capacitor and resistor.
In another embodiment, the laser chip is a multiple quantum well semiconductor laser chip.
In another embodiment, further comprising: at least two transmission lines; one end of one transmission line is connected with the first lead, and the other end of the transmission line is connected with the front surface of the capacitor; one end of the other transmission line is connected with the second lead, and the other end of the transmission line is connected with the cathode of the laser chip.
In another embodiment, the laser chip is fixed on a substrate, and the substrate is positioned on a heat sink base; the at least two transmission lines are arranged on the substrate.
In another embodiment, the inductor, the capacitor and the resistor are integrated on the same substrate.
In another embodiment, the laser chip is located on a substrate on which the inductor, the capacitor and the resistor are located; or the laser chip is positioned on a substrate different from the substrate on which the inductor, the capacitor and the resistor are positioned.
In another embodiment, the capacitance value is between 0.01pF and 1 pF; and/or the inductance value is between 0.01nH and 15 nH; and/or the resistance value is between 0 and 50 ohms.
The invention can achieve the technical effects that:
the invention can reduce the requirement on the modulation bandwidth of the laser chip by adjusting the driving circuit of the laser chip to increase the modulation bandwidth of the laser chip with low cost, high reliability and low bandwidth, thereby being capable of conveniently realizing the transmission of high-speed optical signals at low cost.
The invention can realize the improvement of the modulation bandwidth of the laser and the transmission of high-speed optical signals by utilizing a circuit based on a thin film technology and a low-bandwidth laser chip with low cost and high reliability without developing a high-bandwidth laser chip with great technical difficulty, thereby solving the limitation of the shortage of the high-bandwidth laser chip in the current market.
The laser chip assembly can increase the modulation bandwidth of the laser chip by selecting proper capacitance inductance and resistance, thereby realizing the transmission of high-speed optical signals by using the low-bandwidth laser chip with low cost and high reliability.
The laser chip assembly can be compatible with the existing semiconductor laser chip packaging technology, does not need to additionally develop a new packaging process and increase the chip packaging size, and can be suitable for all optical devices and optical modules. Therefore, the invention can ensure large-scale production, and simultaneously has lower cost and better reliability compared with the prior high-bandwidth laser chip.
The invention can overcome the defects of the existing semiconductor laser chip with the modulation rate of 25G or above, and can use the semiconductor laser chip with low bandwidth in the high-rate optical transmission of 25G or above.
The invention can utilize the existing mature optical chip with high reliability and the assembly manufacturing process to realize the high-speed signal transmission of 25G and above.
Drawings
It is to be understood by those skilled in the art that the following description is only exemplary of the principles of the present invention, which may be applied in numerous ways to achieve many different alternative embodiments. These descriptions are made for the purpose of illustrating the general principles of the present teachings and are not meant to limit the inventive concepts disclosed herein.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the general description given above and the detailed description of the drawings given below, serve to explain the principles of the invention.
The invention is described in further detail below with reference to the following figures and detailed description:
fig. 1 is a schematic structural diagram of a semiconductor laser chip assembly according to the prior art;
FIG. 2 is a schematic diagram of another high speed laser chip assembly of the prior art;
fig. 3 is a schematic structural view of embodiment 1 of a semiconductor laser chip assembly for high-speed optical signal transmission of the present invention;
FIG. 4 is a graph of the intrinsic small signal response of example 1 of the present invention, with frequency (in GHz) on the abscissa and small signal response (in dB) on the ordinate;
FIG. 5 is a small signal response curve diagram of embodiment 1 of the present invention with the addition of an inductor capacitor and resistor circuit;
FIG. 6 is a small signal response curve diagram of embodiment 1 of the present invention with different inductor-capacitor and resistor circuits added;
fig. 7 is a schematic structural view of embodiment 2 of the present invention.
The reference numbers in the figures illustrate:
1 is a laser chip, 2 is an inductor,
3 is a resistor, 4 is a capacitor,
5 is a lead, 6 is a substrate,
7 is a heat sink base, 8 is a gold wire,
and 9 is a transmission line.
Detailed Description
The laser chip assembly for high-rate optical signal transmission according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments, so as to clearly understand the structure and operation principle, but not to limit the protection scope of the present invention.
The core design idea of the invention is to increase the signal modulation bandwidth of the laser chip by combining an additional circuit based on resistance, capacitance and inductance with the laser chip. The semiconductor laser chip generates photons through electrical injection, and the interaction process of the electrons and the photons is equivalent to a circuit consisting of an equivalent resistor, an inductor and a capacitor. However, due to the limitations of semiconductor materials and chip fabrication processes, these equivalent circuit parameters cannot be infinitely adjusted to achieve the required modulation bandwidth. The overall performance of the circuit can be properly adjusted through the additional resistor, the inductor and the capacitor, so that the modulation bandwidth of the signal is increased. Since the market most needs 25G high-speed semiconductor laser, the present invention will explain how to use low-speed laser chip to realize high-speed 25G signal transmission, especially to increase the modulation rate of laser at high temperature of 85 ℃. Obviously, the technical scheme of the invention is also suitable for the bandwidth increase of the laser chip with the speed of more than 25G, such as 50G or even higher.
Based on the idea of the invention, the laser chip and a compensation circuit composed of a resistor, a capacitor and an inductor form a laser chip assembly, and the high-speed electric signal does not directly drive the laser chip, but firstly drives the laser chip to output a high-speed optical signal through the compensation circuit, so that the transmission of the high-speed signal is realized. The invention relates to a laser chip assembly for high-speed optical transmission, which mainly comprises a laser chip, a resistor, a capacitor, an inductor and a lead wire connected with an external driving electric signal. One end of the capacitor is connected with a lead wire connected with an external driving electric signal, and is connected with the inductor and the resistor in parallel, the inductor is connected with the resistor in series and is positioned between the laser chip and the capacitor, and the laser chip is connected with the inductor and the resistor in series. Thus, the applied electrical signal will first pass through a circuit consisting of a capacitor, an inductor and a resistor before driving the laser chip. By selecting proper capacitance, inductance and resistance values, the frequency response of the whole circuit can be modulated, so that the modulation bandwidth of the whole laser chip assembly is improved.
In order to achieve the above-described object of realizing a high-speed optical signal for information transmission based on a low-rate semiconductor laser chip, the present invention is realized by the following embodiments.
Example 1
As shown in fig. 3, the semiconductor laser chip assembly for high-speed optical signal transmission of the present invention includes a laser chip 1, an inductor 2, a resistor 3, a capacitor 4, and at least two leads 5 for connecting external driving electrical signals, wherein the laser chip 1 is fixedly attached to a substrate 6, and the substrate 6 is located on a heat sink base 7; at least two metal film transmission lines 9 are arranged on the substrate 6, wherein one end of one transmission line 9 is connected with a lead 5, and the other end of the transmission line 9 is connected with the front surface of the capacitor 4; one end of another transmission line 9 is connected with another lead 5, and the other end of the transmission line 9 is connected with the cathode of the laser chip 1;
the laser chip 1 is connected with one end of an inductor 2 through a gold wire 8, the other end of the inductor 2 is connected with one end of a resistor 3 in series, the other end of the resistor 3 is connected with the front side of a capacitor 4, and the back side of the capacitor 4 is grounded; the capacitor 4 is connected in parallel with the resistor 3 and the inductor 2 which are connected in series;
as a specific example, the inductor 2, the resistor 3 and the capacitor 4 may be located on another different substrate; in the embodiment, the inductor 2, the resistor 3 and the capacitor 4 are on the same substrate 6 as the laser chip 1, so as to facilitate packaging and save cost;
the inductor 2, the resistor 3 and the capacitor 4 are manufactured by a thin film process;
the inductance value of the inductor 2 is controlled by the size of the metal film;
the resistance value of the resistor 3 is controlled by selecting different metal films and sizes; as a specific embodiment, the resistor 3 may be located between the laser chip 1 and the inductor 2; in consideration of the thermal effect brought by the resistor 3, in the embodiment, the resistor 3 is located between the inductor 2 and the capacitor 4, so that the resistor 3 can be far away from the laser chip 1 to reduce the influence of the thermal effect of the resistor 3 on the laser chip 1;
the capacitor 4 is a flat-plate capacitor, and the capacitance value of the capacitor is controlled by the area and/or the thickness of the dielectric layer;
the specific values of the inductor 2, the resistor 3 and the capacitor 4 are determined by the performance of the laser chip 1 and the modulation bandwidth to be achieved; generally, the value of the inductor 2 is between 0.01nH (nanohenries) and 15nH, the value of the resistor 3 is between 0 and 50 ohms, and the value of the capacitor 4 is between 0.01 and 1pF (picofarads);
in this embodiment, the inductor 2, the resistor 3 and the capacitor 4 form an RLC circuit with a resonant frequency of about
Where L is the inductance of the inductor 2 and C is the capacitance of the capacitor 4; to effectively increase the modulation bandwidth of the laser chip assembly, the resonant frequency is typically between 0.5 and 2 times the desired modulation frequency (i.e., operating rate);
the following describes how the present invention can be used for the modulation of 25Gb/s optical signals by an example;
as shown in fig. 4, the intrinsic small signal response of the laser chip 1 at 85 deg.c and 60mA (milliamp) has a 3dB bandwidth of about 13.7GHz (i.e., the abscissa value corresponding to-3 dB ordinate is about 13.7GHz), and therefore cannot satisfy the signal transmission of 25 Gb/s;
when the RLC circuit in the embodiment is added, the modulation bandwidth can be greatly improved; as shown in fig. 5, the 3dB bandwidth is increased to 15.6GHz when L is 1.63nH, C is 0.022pF, and R is 10 ohm (i.e. the abscissa value corresponding to-3 dB is about 15.6 GHz); fig. 6 shows the small signal response when L is 1.86nH, C is 0.025pF, and R is 10 ohms, and the 3dB bandwidth is increased to 18.5GHz (i.e., the abscissa value corresponding to-3 dB on the ordinate is about 18.5GHz), which is sufficient to satisfy the signal transmission requirement of 25 Gb/s.
The resistance R of the resistor 3 of the present invention is mainly used to control the resonance peak and make the frequency response as flat as possible. However, the resistance of the resistor 3 should not be too large so as not to cause too much thermal influence on the performance of the laser chip 1.
Example 2
In embodiment 1, the inductor 2 is made by a thin film process, and is located on the same substrate 6 as the resistor 3 and the capacitor 4; the laser chip 1 and the inductor 2 are connected through gold wires. Since the gold wire 8 for chip connection has a diameter of only about 25 μm and generates self-induced inductance, the inductor 2 in embodiment 1 can be replaced by the gold wire 8 to form embodiment 2 shown in fig. 7;
in embodiment 2, the inductor 2, which is originally located on the same substrate 6 as the resistor 3 and the capacitor 4, is replaced by a gold wire 8 with a certain length, and the gold wire 8 not only provides the connection between the resistor 3 and the laser chip 1, but also serves as the inductor 2; compared with embodiment 1, embodiment 2 replaces inductor 2 with gold wires, which not only reduces the cost, but also changes the inductance value because the length of the gold wires can be adjusted during chip packaging, so the gold wires with different lengths can function as an adjustable inductor. Since the parameters of the laser chips 1 of different suppliers are different, the inductance value is adjusted by changing the length of the gold wire, so that the resonance characteristics can be adjusted for different laser chips greatly and conveniently to obtain the optimal modulation performance.
In the above described embodiment the laser chip 1 is located on the substrate 6 where the inductor 2, the resistor 3 and the capacitor 4 are located, but this is not essential. The laser chip 1 may be placed on another substrate heat sink and then connected to the components on the substrate 6 by gold wires. Although using a different base heat sink would increase the component size, a different base would likely reduce the effect of the temperature increase on the laser chip 1 due to the heat generated by the resistor 3.
In addition, considering that the length of the gold wire is not likely to be too long in packaging, an inductor with a small inductance value connected in series with a resistor and adjustment of the length, diameter and number of gold wires can be added in embodiment 2 as in embodiment 1 to achieve the purpose of adjustable inductance.
The substrate 6 of the present invention may employ an aluminum nitride, alumina, quartz or silicon-based substrate.
The laser chip 1 of the present invention may be a multiple quantum well semiconductor laser chip.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (12)
1. A semiconductor laser chip assembly for high speed optical signal transmission, comprising:
a laser chip;
at least two leads for connecting external driving electrical signals;
a capacitor; the back surface of the capacitor is in common with the laser chip; the front surface of the capacitor is connected with one of the leads;
a resistor; the resistor is positioned between the laser chip and the capacitor; the capacitor is connected with the resistor in parallel; and
a gold wire; one end of the gold wire is connected with the laser chip, and the other end of the gold wire is connected with the resistor.
2. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1, wherein: the self-induction inductance generated by the gold wire is between 0.01nH and 10 nH.
3. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1 or 2, wherein: the laser chip, the capacitor and the resistor are sealed in a package.
4. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1, further comprising: an inductor; the inductor is connected with the resistor in series; the inductor and the resistor which are connected in series are connected with the capacitor in parallel; the inductor and the resistor which are connected in series are connected with the laser chip; the inductor and the resistor which are connected in series are positioned between the laser chip and the capacitor.
5. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 4, wherein: the resonance frequency of the RLC circuit consisting of the inductor, the resistor and the capacitor is 0.5 to 2 times of the modulation frequency.
6. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 4 or 5, wherein: the laser chip, the inductor, the capacitor and the resistor are sealed in a package.
7. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1 or 4, wherein: the laser chip is a multi-quantum well semiconductor laser chip.
8. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1 or 4, further comprising: at least two transmission lines; one end of one transmission line is connected with the first lead, and the other end of the transmission line is connected with the front surface of the capacitor; one end of the other transmission line is connected with the second lead, and the other end of the transmission line is connected with the cathode of the laser chip.
9. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 8, wherein: the laser chip is fixed on a substrate, and the substrate is positioned on a heat sink base; the at least two transmission lines are arranged on the substrate.
10. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 4, wherein: the inductor, the capacitor and the resistor are integrated on the same substrate.
11. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 10, wherein: the laser chip is positioned on the substrate on which the inductor, the capacitor and the resistor are positioned; or the laser chip is positioned on a substrate different from the substrate on which the inductor, the capacitor and the resistor are positioned.
12. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1 or 4, wherein: the capacitance value is between 0.01pF and 1 pF; and/or the inductance value is between 0.01nH and 15 nH; and/or the resistance value is between 0 and 50 ohms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011304086.9A CN112290378A (en) | 2020-11-19 | 2020-11-19 | Semiconductor laser chip assembly for high-speed optical signal transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011304086.9A CN112290378A (en) | 2020-11-19 | 2020-11-19 | Semiconductor laser chip assembly for high-speed optical signal transmission |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112290378A true CN112290378A (en) | 2021-01-29 |
Family
ID=74399396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011304086.9A Pending CN112290378A (en) | 2020-11-19 | 2020-11-19 | Semiconductor laser chip assembly for high-speed optical signal transmission |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112290378A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024016905A1 (en) * | 2022-07-21 | 2024-01-25 | 青岛海信宽带多媒体技术有限公司 | Optical module and laser assembly |
-
2020
- 2020-11-19 CN CN202011304086.9A patent/CN112290378A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024016905A1 (en) * | 2022-07-21 | 2024-01-25 | 青岛海信宽带多媒体技术有限公司 | Optical module and laser assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1848075B1 (en) | Optimized wire bonding of an integrated modulator and laser diode on a mount | |
| US7158550B2 (en) | Optical element module package and method for manufacturing the same | |
| JP4578164B2 (en) | Optical module | |
| US6836492B2 (en) | Laser-diode module, optical transceiver and fiber transmission system | |
| JP2004214651A (en) | Optical module | |
| CN112290378A (en) | Semiconductor laser chip assembly for high-speed optical signal transmission | |
| CN1809925A (en) | Optimized multi-application assembly | |
| WO2022141953A1 (en) | To package structure | |
| CN213660865U (en) | Semiconductor laser chip assembly for high-speed optical signal transmission | |
| KR0181896B1 (en) | Wide-band device of fast optical module | |
| WO2022133659A1 (en) | Transmitter optical subassembly | |
| CN108923248B (en) | Structure of sinking type direct modulation laser and driver and application thereof | |
| JP2010199324A (en) | Mounting structure of semiconductor laser element array | |
| CN114269039B (en) | LED device with high electro-optic modulation bandwidth | |
| CN110690645A (en) | Laser array driving device and packaging method thereof | |
| CN112289870A (en) | Detector chip assembly for high rate optical signal reception | |
| CN105977241A (en) | Packaging structure for photoelectron integrated chip | |
| CN213424998U (en) | Detector chip assembly for high rate optical signal reception | |
| CN216391024U (en) | Modulator chip assembly for high rate optical signal generation | |
| CN115933070A (en) | Optical module and laser assembly | |
| CN112134623A (en) | Link design capable of realizing high-speed signal transmission and low loss | |
| CN114039668A (en) | Modulator chip assembly for high rate optical signal generation | |
| JP2728104B2 (en) | Semiconductor laser module | |
| WO2023019809A1 (en) | Electro-absorption modulated distributed feedback laser chip and laser chip encapsulation structure | |
| CN214798175U (en) | Coaxial packaged 25G high-speed laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |