CN107317637B - Light receiving module and optical module - Google Patents
Light receiving module and optical module Download PDFInfo
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- CN107317637B CN107317637B CN201610265062.4A CN201610265062A CN107317637B CN 107317637 B CN107317637 B CN 107317637B CN 201610265062 A CN201610265062 A CN 201610265062A CN 107317637 B CN107317637 B CN 107317637B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
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Abstract
The application discloses a light receiving component, which is electrically connected to a high-voltage power supply, and comprises a photoelectric detector, a trans-impedance amplifier and a high-voltage capacitor which are electrically connected with each other; the photoelectric detector is electrically connected with a high-voltage power supply, the high-voltage capacitor isolates the transimpedance amplifier from the high-voltage power supply, and the transimpedance amplifier is electrically connected with the photoelectric detector through the high-voltage capacitor. In the technical scheme of this application, high-voltage capacitor keeps apart transimpedance amplifier and high voltage power supply to make transimpedance amplifier can work under high voltage power supply, and can encapsulate to together with photoelectric detector, improved signal quality.
Description
Technical Field
The application belongs to the technical field of optical communication, and particularly relates to an optical receiving assembly and an optical module.
Background
In the current optical communication module, the optical receiving component includes a PD chip (photodetector) and a TIA chip (transimpedance amplifier), and there are two types of currently used PD chips, namely, an APD (avalanche photo diode) and a PIN (PIN). The photodetector and the transimpedance amplifier are typically connected by gold wire. As the optical communication rate increases, the corresponding package bandwidth also needs to increase, and the capacitance for the PD chip also needs to decrease. Thus, fast response can be achieved in two ways: 1. reducing the internal capacitance of the PD chip; 2. the bias voltage VPD is increased. However, since the cost increases a lot when the capacitance of the PD chip is reduced, a method of increasing the bias voltage VPD is generally used.
However, a trans-impedance amplifier (TIA chip) has no pin to provide high-voltage bias, so that only an external bias method is used, but in a conventional manner, when the communication speed is fast or the frequency is high, the equivalent capacitance, the equivalent inductance, and the equivalent resistance between boards will increase.
Therefore, it is necessary to design an optical receiving module and an optical communication module including the same that can operate at high voltage so that the TIA chip can operate normally.
Disclosure of Invention
An embodiment of the present application provides a light receiving device, where the light receiving device is electrically connected to a high voltage power supply, and the light receiving device includes a photodetector, a transimpedance amplifier, and a high voltage capacitor, which are electrically connected to each other; the photoelectric detector is electrically connected with a high-voltage power supply, the high-voltage capacitor isolates the transimpedance amplifier from the high-voltage power supply, and the transimpedance amplifier is electrically connected with the photoelectric detector through the high-voltage capacitor; and the high-voltage capacitor is connected between the PINK end of the trans-impedance amplifier and the cathode of the photoelectric detector.
In one embodiment, the photoelectric detector and the transimpedance amplifier are respectively packaged into a PD chip and a TIA chip, the TIA chip comprises a PINK pin and a PINA pin, the PD chip is provided with a cathode and an anode, the high-voltage capacitor is electrically connected between the PINK pin and the cathode of the PD chip, and the PINA pin is electrically connected with the anode of the PD chip.
In one embodiment, the TIA chip comprises two PINK pins and one PINA pin, the PD chip is provided with two cathodes and an anode, and a high-voltage capacitor is connected between the two PINK pins of the TIA chip and the two cathodes of the PD chip respectively.
In one embodiment, the light receiving assembly further comprises a conductive layer electrically connected with the high-voltage capacitor, the high-voltage capacitor is a routing capacitor, one end of the high-voltage capacitor is attached to the conductive layer, and the other end of the high-voltage capacitor is electrically connected with the cathode of the PD chip through a gold wire; the conducting layer is electrically connected with a PINK pin of the TIA chip through a gold thread.
In one embodiment, the light receiving module further includes a conductive layer electrically connected to the high-voltage capacitor, the high-voltage capacitor is a patch capacitor, the conductive layer includes a first conductive layer and a second conductive layer separately disposed from each other, and two ends of the patch capacitor are respectively attached to the first conductive layer and the second conductive layer; and the cathode of the PD chip is electrically connected with the first conducting layer and the second conducting layer is electrically connected with the PINK pin of the TIA chip through gold wires.
In one embodiment, the light receiving assembly further includes a conductive layer electrically connected to the high-voltage capacitor, the high-voltage capacitor is a wire bonding capacitor, the conductive layer includes a first conductive layer and a second conductive layer separately disposed from each other, one end of the wire bonding capacitor is attached to the second conductive layer, and the other end of the wire bonding capacitor is electrically connected to the first conductive layer through a gold wire; the first conducting layer is electrically connected with the cathode of the PD chip and the second conducting layer is electrically connected with the PINK pin of the TIA chip through gold wires.
In one embodiment, the high-voltage capacitor and the transimpedance amplifier are packaged together to form a transimpedance amplifier with a high-voltage capacitor inside.
In an embodiment, the light receiving module further includes a carrier plate for carrying the photodetector, the transimpedance amplifier, and the high-voltage capacitor, and the carrier plate is made of ceramic.
An embodiment of the present application further provides an optical module, the optical module includes a light emitting unit, a light receiving unit and a controller, the light emitting unit includes a laser, a laser driving unit and a first clock data recovery module, the light receiving unit includes the above-mentioned light receiving assembly and a second clock data recovery module, the controller with the laser driving unit, the first clock data recovery module and the second clock data recovery module are connected to control the light emitting unit and the light receiving unit.
Compared with the prior art, in the technical scheme of this application, light receiving component still includes a plurality of high-voltage capacitors, high-voltage capacitor keeps apart transimpedance amplifier and high voltage power supply to make transimpedance amplifier can work under high voltage power supply, and can encapsulate together with photoelectric detector, improved signal quality.
Drawings
FIG. 1 is a schematic structural diagram of a first embodiment of a light receiving module according to the present application;
FIG. 2 is a schematic structural diagram of a second embodiment of a light receiving module according to the present application;
FIG. 3 is a schematic structural diagram of a third embodiment of a light-receiving module according to the present application;
FIG. 4 is a schematic structural diagram of a fourth embodiment of a light-receiving module according to the present application;
FIG. 5 is a schematic structural diagram of a fifth embodiment of a light receiving module according to the present application;
FIG. 6 is a schematic diagram of a light receiving module according to the present application;
fig. 7 is a schematic structural diagram of an optical module according to the present application.
Detailed Description
The present application will be described in detail below with reference to embodiments shown in the drawings. However, these embodiments are not intended to limit the present application, and structural or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present application.
In the various illustrations of the present application, certain dimensions of structures or portions are exaggerated relative to other structures or portions for ease of illustration and, thus, are provided only to illustrate the basic structure of the subject matter of the present application.
Terms such as "upper," "above," "lower," "below," and the like, used herein to denote relative spatial positions, are used for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. The spatially relative positional terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
When an element or layer is referred to as being "on," or "connected" to another element or layer, it can be directly on, connected to, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present.
Referring to fig. 1 to 6, the present application provides a light receiving device electrically connected to a high voltage power supply, the light receiving device includes a photodetector, a transimpedance amplifier, and a plurality of high voltage capacitors electrically connected to each other. In the drawings of the specification of the present application, the high voltage power supply is denoted by VPD.
The photoelectric detector and the trans-impedance amplifier are respectively packaged into a PD chip and a TIA chip, the TIA chip comprises a PINK pin and a PINA pin, the PD chip is provided with a cathode and an anode, the high-voltage capacitor is electrically connected between the PINK pin and the cathode of the PD chip, and the PINA pin is electrically connected with the anode of the PD chip.
Fig. 6 is a schematic diagram of a light receiving module according to the present invention. The TIA chip 2 comprises a PINK pin and a PINA pin, the PD chip 1 is provided with an anode and a cathode, and the PINA pin of the TIA chip 2 is electrically connected with the anode of the PD chip 1.
The application provides two connection modes of the high-voltage capacitor 3: firstly, as shown in fig. 1 to 4, the high-voltage capacitor 3 is electrically connected between the PINK pin of the TIA chip 2 and the cathode of the PD chip 1, and the TIA chip 2 is indirectly connected with the PD chip 1 to isolate the TIA chip 2 from a high-voltage power supply; secondly, as shown in fig. 5, the pin of the TIA chip 2 is directly electrically connected to the cathode of the PD chip 1, and the high-voltage capacitor 3 is packaged in the TIA chip 2 and forms the TIA chip 2 with the high-voltage capacitor 3 inside, so as to isolate the TIA chip 2 from the high-voltage power supply. Of course, if there are other connection modes, the purpose of the invention can be achieved as long as the TIA chip 2 is connected with the PD chip 1 through the high-voltage capacitor 3 and is thus isolated from the high-voltage power supply.
The light receiving component further comprises a carrier plate 4 for carrying the PD chip 1 and/or the TIA chip 2 and/or the high-voltage capacitor 3, and a conductive layer 5 disposed on the carrier plate 4.
When the high-voltage capacitor 3 is electrically connected between the PINK pin of the TIA chip 2 and the cathode of the PD chip 1, the high-voltage capacitor 3 can be a routing capacitor 31 or a patch capacitor 32, and specifically, the use modes of the patch capacitor 32 and the routing capacitor 31 are slightly different. Electrodes at two ends of the patch capacitor 32 need to be attached to the conductive layer 5, so that two conductive layers 5 which are isolated from each other need to be arranged on the second carrier plate 42; one end of the wire bonding capacitor 31 needs to be attached to the conductive layer 5, and the other end thereof needs to extend out of the gold wire, so as to be electrically connected with other conductive components, such as the circuit layer 6, through the gold wire.
The structure of the conductive layer 5 may also be different, and therefore the connection between the high-voltage capacitor 3 and the conductive layer 5 is also different:
the high-voltage capacitor 3 is a routing capacitor 31, the conducting layer 5 is an integral body, one end of the high-voltage capacitor 3 is completely attached to the conducting layer 5, and the other end of the routing capacitor 31 is electrically connected with the cathode of the PD chip 1 through a gold thread. The conductive layer 5 is electrically connected to the PINK pin of the TIA chip 2 by a gold wire, and naturally, if other methods are adopted, such as a conductive film, the purpose of the invention can be achieved.
The high-voltage capacitor 3 is a patch capacitor 32, the conductive layer 5 includes a first conductive layer 51 and a second conductive layer 52 which are separated from each other, and two ends of the patch capacitor 32 are respectively attached to the first conductive layer 51 and the second conductive layer 52. The cathode of the PD chip 1 and the first conductive layer 51, and the second conductive layer 52 and the PINK pin of the TIA chip 2 are electrically connected by gold wires, but of course, other methods, such as a conductive film, can also achieve the purpose of the present invention.
The high-voltage capacitor 3 is a routing capacitor 31, the conductive layer 5 includes a first conductive layer 51 and a second conductive layer 52 which are separately arranged, one end of the routing capacitor 31 is completely attached to the second conductive layer 52, and the other end is electrically connected with the first conductive layer 51 through a gold thread. The first conductive layer 51 and the cathode of the PD chip 1 and the second conductive layer 52 and the PINK pin of the TIA chip 2 are electrically connected by gold wires, but other methods, such as a conductive film, can also achieve the purpose of the present invention.
Specifically, the present invention provides the following examples:
referring to fig. 1, a light receiving device according to a first embodiment of the present invention is described, in which a carrier 4 includes a main carrier 40 for carrying the PD chip 1, the high voltage capacitor 3 and the TIA chip 2, a first carrier 41 for carrying the PD chip 1, and a second carrier 42 for carrying the wire bonding capacitor 31. The first carrier 41 and the second carrier 42 are welded or attached to the main carrier 40. The conductive layer 5 is soldered or attached to the second carrier 42. The light receiving module further comprises a circuit layer 6 welded or attached to the first carrier 41, and the circuit layer 6 is connected to the cathode and the anode of the PD chip 1 respectively. Therefore, the wiring layer 6 also becomes the cathode terminal and the anode terminal of the PD chip 1.
In this embodiment, the high-voltage capacitor 3 is a wire bonding capacitor 31, the back surface of the wire bonding capacitor 31 is attached to the conductive layer 5 of the second carrier 42, and the front surface of the wire bonding capacitor 31 is electrically connected to the cathode end of the PD chip 1 by a gold wire. The conducting layer 5 is also electrically connected with a PINK pin of the TIA chip 2 through a gold thread. And the anode end of the PD chip 1 is electrically connected with the PINA pin of the TIA chip 2 through a gold wire.
The carrier plate 4 is an insulating plate and made of a ceramic material, and the conductive layer 5 is attached to or welded on the carrier plate 4. Of course, if the carrier 4 is made of a conductive material, the carrier 4 can be fixed to the PD chip 1 after another layer of insulating material is added thereon.
Therefore, in the present embodiment, the signal path is the cathode of the PD chip 1 → the circuit layer 6 of the first carrier 41 → the wire bonding capacitor 31 → the conductive layer 5 → the PINK pin of the TIA chip 2. The embodiment can provide a complete high-speed signal loop, thereby improving the signal quality, isolating direct current components and improving high-frequency signals. In addition, the high-voltage power supply is electrically connected with the front surface of the routing capacitor 31, so that the high-voltage power supply can be only loaded on the PD chip 1 and is isolated from the TIA chip 2.
Referring to fig. 2, a light receiving module according to a second embodiment of the present invention is described, in this embodiment, the components of the light receiving module are substantially the same as those of the first embodiment, except that the high-voltage capacitor 3 is a patch capacitor 32, and the conductive layer 5 includes a first conductive layer 51 and a second conductive layer 52 which are separately disposed.
Therefore, in the present embodiment, two ends of the chip capacitor 32 are respectively attached to the first conductive layer 51 and the second conductive layer 52, the first conductive layer 51 is electrically connected to the cathode end of the circuit layer 6 by a gold wire, and the second conductive layer 52 is electrically connected to the pin of the TIA chip 2 by a gold wire.
Therefore, in the present embodiment, the signal path is the cathode of the PD chip 1 → the circuit layer 6 of the first carrier 41 → the first conductive layer 51 → the chip capacitor 32 → the second conductive layer 52 → the pin of the TIA chip 2. This embodiment provides another embodiment of the high voltage capacitor 3, i.e. the patch capacitor 32. In addition, the high voltage power supply is electrically connected to the first conductive layer 51, so that the high voltage power supply can only be applied to the PD chip 1 and isolated from the TIA chip 2.
Referring to fig. 3, a light receiving device according to a third embodiment of the present invention is introduced, in this embodiment, the carrier 4 includes a main carrier 40 for carrying the PD chip 1, the high voltage capacitor 3 and the TIA chip 2, and a third carrier 43 for carrying the PD chip 1 and the high voltage capacitor 3, and the third carrier 43 is attached or soldered on the main carrier 40. The conductive layer 5 includes a first conductive layer 51 and a second conductive layer 52 that are separately disposed from each other, and is soldered or attached to the third carrier 43.
In this embodiment, the high voltage capacitor 3 is a wire bonding capacitor 31, the back surface of the wire bonding capacitor 31 is completely attached to the second conductive layer 52, and the front surface of the wire bonding capacitor 31 is electrically connected to the first conductive layer 51 by a gold wire. The first conductive layer 51 is directly electrically connected with the cathode of the PD chip 1, and the second conductive layer 52 is electrically connected with the PINK pin of the TIA chip 2.
Therefore, in the present embodiment, the signal path is: the cathode of the PD chip 1 → the first conductive layer 51 → the wire bonding capacitor 31 → the second conductive layer 52 → the PINK pin of the TIA chip 2. Compared with the first embodiment and the second embodiment, the embodiment further shortens the length of the gold wire, reduces the inductance effect caused by the gold wire, reduces the inductance of a signal path, and improves the packaging bandwidth. In addition, the high voltage power supply is electrically connected to the first conductive layer 51, so that the high voltage power supply can only be applied to the PD chip 1 and isolated from the TIA chip 2.
Referring to fig. 4, a light receiving module according to a third embodiment of the present invention will be described, wherein the components of the light receiving module in this embodiment are substantially the same as those in the third embodiment, except that the high-voltage capacitor 3 is a patch capacitor 32. Thus, in this embodiment, both ends of the patch capacitor 32 are respectively attached to the first conductive layer 51 and the second conductive layer 52.
Therefore, in the present embodiment, the signal paths are: the cathode of the PD chip 1 → the first conductive layer 51 → the patch capacitor 32 → the second conductive layer 52 → the pin of the TIA chip 2, which provides another specific implementation of the patch capacitor 32 compared to the third embodiment. In addition, the high voltage power supply is electrically connected with the third conductive layer 5, so that the high voltage power supply can be loaded on the PD chip 1 and isolated from the TIA chip 2.
Referring to fig. 5, a light receiving device in a fifth embodiment of the present invention is described, in this embodiment, the carrier 4 includes a main carrier 40 for carrying the PD chip 1 and the TIA chip 2, and a first carrier 41 for carrying the PD chip 1. High-voltage capacitor 3 is integrated in TIA chip 2, be provided with the amplifier 21 that plays TIA chip 2 main role in TIA chip 2, amplifier 21 also has PINK end and PINA end, and is corresponding, high-voltage capacitor 3 electric connection in between PINK end of amplifier 21 and the PINK pin of TIA chip 2. Meanwhile, the cathode of the PD chip 1 is electrically connected with the PINK pin of the TIA chip 2 through a gold thread.
Therefore, in the present embodiment, the signal path is the cathode of the PD chip 1 → the pin of the TIA chip 2 → the high-voltage capacitor 3 → the pin terminal of the amplifier 21. The high voltage power supply is connected to the PINK pin, so that although the high voltage power supply can be directly connected to the TIA chip 2, the amplifier 21 in the TIA chip 2 is still isolated from the high voltage power supply by the high voltage capacitor 3 integrated in the TIA chip 2. In this embodiment, the loop path is the smallest and the high frequency bandwidth is the highest as compared with the above embodiments 1 to 4.
Meanwhile, as in embodiments 1 to 5, the PD chip 1 has two cathodes and one anode, and correspondingly, the TIA chip 2 also has two PINK electrodes and one PINA electrode, so that in embodiments 1 to 5, there are two high-voltage capacitors 3, and of course, if there are several high-voltage capacitors 3, as long as the function of protecting the TIA chip 2 can be achieved.
In addition, the light receiving component also comprises a filter capacitor 7, and the filter capacitor 7 is connected with the high-voltage power supply and then connected with the high-voltage capacitor 3, so that the obtained power supply is more stable and the noise is lower.
Referring to fig. 7, an optical module using the optical receiving module in embodiments 1 to 5 of the present application will be described. The optical module includes a light emitting unit, a light receiving unit and a controller 200, wherein the light emitting unit includes a laser 300, a laser driving unit 400 and a first clock data recovery module 501, the light receiving unit includes the light receiving module 100 and a second clock data recovery module 502 disclosed in embodiments 1 to 5, and the controller 200 is connected to the laser driving unit 400, the first clock data recovery module 501 and the second clock data recovery module 502 to control the light emitting unit and the light receiving unit.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the concrete description of the feasible embodiments of the present application, they are not intended to limit the scope of the present application, and all equivalent embodiments or modifications that do not depart from the technical spirit of the present application are intended to be included within the scope of the present application.
Claims (9)
1. A light receiving component is electrically connected to a high-voltage power supply, and is characterized by comprising a photoelectric detector, a trans-impedance amplifier and a high-voltage capacitor which are electrically connected with each other; the photoelectric detector is electrically connected with a high-voltage power supply, the high-voltage capacitor isolates the transimpedance amplifier from the high-voltage power supply, and the transimpedance amplifier is electrically connected with the photoelectric detector through the high-voltage capacitor; the high-voltage capacitor is connected between the PINK end of the transimpedance amplifier and the cathode of the photoelectric detector, and the PINA end of the transimpedance amplifier is electrically connected with the anode of the photoelectric detector.
2. The optical receiving module of claim 1, wherein the photodetector and the transimpedance amplifier are packaged as a PD chip and a TIA chip, respectively, the TIA chip includes a PINK pin and a PINA pin, the PD chip has a cathode and an anode, the high-voltage capacitor is electrically connected between the PINK pin and the cathode of the PD chip, and the PINA pin is electrically connected to the anode of the PD chip.
3. The optical receiving module as claimed in claim 2, wherein the TIA chip includes two PINK pins and one PINA pin, the PD chip has two cathodes and one anode, and a high voltage capacitor is connected between the two PINK pins of the TIA chip and the two cathodes of the PD chip, respectively.
4. The light-receiving element of claim 2, further comprising a conductive layer electrically connected to the high-voltage capacitor, wherein the high-voltage capacitor is a wire bonding capacitor, one end of the high-voltage capacitor is attached to the conductive layer, and the other end of the high-voltage capacitor is electrically connected to the cathode of the PD chip by a gold wire; the conducting layer is electrically connected with a PINK pin of the TIA chip through a gold thread.
5. The optical receiving element according to claim 2, further comprising a conductive layer electrically connected to the high-voltage capacitor, wherein the high-voltage capacitor is a chip capacitor, the conductive layer comprises a first conductive layer and a second conductive layer separately disposed from each other, and two ends of the chip capacitor are respectively attached to the first conductive layer and the second conductive layer; and the cathode of the PD chip is electrically connected with the first conducting layer and the second conducting layer is electrically connected with the PINK pin of the TIA chip through gold wires.
6. The light-receiving assembly of claim 2, further comprising a conductive layer electrically connected to the high-voltage capacitor, wherein the high-voltage capacitor is a wire bonding capacitor, the conductive layer comprises a first conductive layer and a second conductive layer separately disposed from each other, one end of the wire bonding capacitor is attached to the second conductive layer, and the other end of the wire bonding capacitor is electrically connected to the first conductive layer through a gold wire; the first conducting layer is electrically connected with the cathode of the PD chip and the second conducting layer is electrically connected with the PINK pin of the TIA chip through gold wires.
7. The light receiving module of claim 1, wherein the high voltage capacitor is packaged with the transimpedance amplifier to form a transimpedance amplifier having a high voltage capacitor therein.
8. The light-receiving module of any one of claims 2 or 7, further comprising a carrier plate for carrying the photodetector, the transimpedance amplifier and the high-voltage capacitor, wherein the carrier plate is made of ceramic.
9. An optical module, comprising an optical transmitter, an optical receiver and a controller, wherein the optical transmitter comprises a laser, a laser driver and a first clock data recovery module, the optical receiver comprises the optical receiver assembly of any one of claims 1 to 8 and a second clock data recovery module, and the controller is connected to the laser driver, the first clock data recovery module and the second clock data recovery module to control the optical transmitter and the optical receiver.
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| CN201610265062.4A CN107317637B (en) | 2016-04-26 | 2016-04-26 | Light receiving module and optical module |
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| CN201610265062.4A CN107317637B (en) | 2016-04-26 | 2016-04-26 | Light receiving module and optical module |
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| CN107317637B true CN107317637B (en) | 2020-10-27 |
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| JP7263697B2 (en) * | 2018-04-13 | 2023-04-25 | 住友電気工業株式会社 | Photodetector |
| CN111865429B (en) * | 2019-04-30 | 2022-05-27 | 深圳市聚飞光电股份有限公司 | Photoelectric receiver and manufacturing method thereof |
| CN112398540B (en) * | 2019-08-14 | 2022-02-15 | 苏州旭创科技有限公司 | Optical module and signal processing system comprising same |
| CN113488455B (en) * | 2021-05-24 | 2023-03-21 | 武汉敏芯半导体股份有限公司 | Anti-interference high-speed light receiving device |
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