CN107317637A - Light-receiving component and optical module - Google Patents
Light-receiving component and optical module Download PDFInfo
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- CN107317637A CN107317637A CN201610265062.4A CN201610265062A CN107317637A CN 107317637 A CN107317637 A CN 107317637A CN 201610265062 A CN201610265062 A CN 201610265062A CN 107317637 A CN107317637 A CN 107317637A
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- conductive layer
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- electrically connected
- receiving component
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
Abstract
The application discloses a kind of light-receiving component, and the light-receiving component is electrically connected in high voltage power supply, and the light-receiving component includes photodetector, trans-impedance amplifier and the high-voltage capacitance being electrically connected with each other；The photodetector is mutually electrically connected with high voltage power supply, and trans-impedance amplifier is isolated by the high-voltage capacitance with high voltage power supply, and the trans-impedance amplifier is electrically connected with by the high-voltage capacitance and the photodetector.In the technical scheme of the application, trans-impedance amplifier is isolated by the high-voltage capacitance with high voltage power supply, so that trans-impedance amplifier is operable with high voltage power supply, and can be encapsulated together with photodetector, improves signal quality.
Description
Technical field
The application belongs to technical field of photo communication, and in particular to a kind of light-receiving component and optical module.
Background technology
In current optical communications module, light-receiving component includes PD chips（Photodetector）With TIA chips（Trans-impedance amplifier）, PD chips conventional at present have two kinds, APD（Avalanche photodide）、PIN（Photodiode）.Typically connected between photodetector and trans-impedance amplifier by gold thread.With the raising of optic communication speed, corresponding encapsulation bandwidth is also required to improve, and also to reduce for PD chip capacities.Therefore, quick response can be realized by two ways：1st, PD chip internal electric capacity is reduced；2nd, bias voltage VPD is improved.But, after reducing due to the electric capacity of PD chips, cost can increase many, therefore, general using the method for improving bias voltage VPD at present.
But, trans-impedance amplifier（TIA chips）There is no pin to provide HVB high voltage bias, so can only be by the method for external bias, but in traditional approach, when communication speed is quickly or frequency is very high, equivalent capacity, equivalent inductance, equivalent resistance will increase between plate.
Therefore a kind of light-receiving component that can be worked under high pressure and the optical communications module including it must be designed, to enable TIA chip normal works.
The content of the invention
The embodiment of the application one provides a kind of light-receiving component, and the light-receiving component is electrically connected in high voltage power supply, and the light-receiving component includes photodetector, trans-impedance amplifier and the high-voltage capacitance being electrically connected with each other；The photodetector is mutually electrically connected with high voltage power supply, and trans-impedance amplifier is isolated by the high-voltage capacitance with high voltage power supply, and the trans-impedance amplifier is electrically connected with by the high-voltage capacitance and the photodetector.
In one embodiment, the photodetector and trans-impedance amplifier are packaged into PD chips and TIA chips respectively, the TIA chips include PINK pins and PINA pins, the PD chips have negative electrode and anode, the high-voltage capacitance is electrically connected between the negative electrode of PINK pins and PD chips, and the anode of the PINA pins and PD chips is electrically connected with.
In one embodiment, the TIA chips include two PINK pins and a PINA pin, and the PD chips have two negative electrodes and an anode, a high-voltage capacitance is connected between two PINK pins of the TIA chips and two negative electrodes of the PD chips.
In one embodiment, the light-receiving component also includes the conductive layer being electrically connected with the high-voltage capacitance, the high-voltage capacitance is routing electric capacity, and one end of the high-voltage capacitance is attached on conductive layer, and the negative electrode of the other end of the high-voltage capacitance and the PD chips is electrically connected with by gold thread；The PINK pins of the conductive layer and the TIA chips are electrically connected with by gold thread.
In one embodiment, the light-receiving component also includes the conductive layer being electrically connected with the high-voltage capacitance, the high-voltage capacitance is patch capacitor, the conductive layer includes the first conductive layer and the second conductive layer for being separated from each other setting, and the two ends of the patch capacitor are attached on the first conductive layer and the second conductive layer respectively；It is electrically connected between the negative electrode of the PD chips and first conductive layer and between the PINK pins of second conductive layer and the TIA chips by gold thread.
In one embodiment, the light-receiving component also includes the conductive layer being electrically connected with the high-voltage capacitance, the high-voltage capacitance is routing electric capacity, the conductive layer includes the first conductive layer and the second conductive layer for being separated from each other setting, one end of the routing electric capacity is attached on second conductive layer, and the other end is electrically connected with first conductive layer by gold thread；It is electrically connected between the negative electrode of first conductive layer and the PD chips and between the PINK pins of second conductive layer and the TIA chips by gold thread.
In one embodiment, the high-voltage capacitance is packaged together to form the internal trans-impedance amplifier with high-voltage capacitance with the trans-impedance amplifier.
In one embodiment, the light-receiving component also includes the support plate for carrying the photodetector, trans-impedance amplifier and high-voltage capacitance, and the material of the support plate is ceramics.
The embodiment of the application one also provides a kind of optical module, the optical module includes Optical Transmit Unit, light receiving unit and controller, the Optical Transmit Unit includes laser, laser drive unit and the first clock and data recovery module, the light receiving unit includes light-receiving component and second clock data recovery module described above, and the controller is connected to control Optical Transmit Unit and light receiving unit with the laser drive unit, the first clock and data recovery module and second clock data recovery module.
Compared with prior art, in the technical scheme of the application, the light-receiving component also includes some high-voltage capacitances, trans-impedance amplifier is isolated by the high-voltage capacitance with high voltage power supply, so that trans-impedance amplifier is operable with high voltage power supply, and can be encapsulated with photodetector together with, improve signal quality.
Brief description of the drawings
Fig. 1 is the structural representation of the first embodiment of the application light-receiving component；
Fig. 2 is the structural representation of the application light-receiving second of embodiment of component；
Fig. 3 is the structural representation of the third embodiment of the application light-receiving component；
Fig. 4 is the structural representation of the 4th kind of embodiment of the application light-receiving component；
Fig. 5 is the structural representation of the 5th kind of embodiment of the application light-receiving component；
Fig. 6 is the schematic diagram of the application light-receiving component；
Fig. 7 is the structural representation of the application optical module.
Embodiment
The application is described in detail below with reference to each embodiment shown in the drawings.But the conversion that these embodiments are not intended to limit in the application, the structure or function that one of ordinary skill in the art is made according to these embodiments is all contained in the protection domain of the application.
In each diagram of the application, for the ease of diagram, therefore structure or partial some sizes, can be only used for illustrating the basic structure of the theme of the application relative to other structures or partial enlargement.
It is used herein such as " on ", " top ", " under ", the term of representation space relative position " lower section " is in order at and is easy to the purpose of explanation to describe a unit as shown in the drawings or feature relative to another unit or the relation of feature.The term of relative space position can be intended to include different azimuth of the equipment in use or work in addition to orientation shown in figure.If for example, by figure equipment overturn, be described as being located at other units or feature " lower section " or " under " unit will be located at other units or feature " top ".Therefore, exemplary term " lower section " can include above and below both orientation.Equipment can be otherwise directed（It is rotated by 90 ° or other directions）, and correspondingly explain used herein and space correlation description language.
When element or layer be referred to as another part or layer " on ", with another part or layer " connection " when, its can directly on another part or layer, be connected to another part or layer, or there may be intermediary element or layer.On the contrary, when part is referred to as " directly on another part or layer ", " being connected directly between on another part or layer ", it is impossible to there is intermediate member or layer.
Join shown in Fig. 1 to Fig. 6, this application provides a kind of light-receiving component, the light-receiving component is electrically connected in high voltage power supply, the light-receiving component includes photodetector, trans-impedance amplifier and some high-voltage capacitances being electrically connected with each other.In the drawings in the descriptive section of the present application, the high voltage power supply is represented with VPD.
The photodetector and trans-impedance amplifier are packaged into PD chips and TIA chips respectively, the TIA chips include PINK pins and PINA pins, the PD chips have negative electrode and anode, the high-voltage capacitance is electrically connected between the negative electrode of PINK pins and PD chips, and the anode of the PINA pins and PD chips is electrically connected with.
It is illustrated in figure 6 the schematic diagram of the application light-receiving component.The TIA chips 2 include PINK pins, PINA pins, and the PD chips 1 have anode and negative electrode, and the anode of the PINA pins of the TIA chips 2 and the PD chips 1 is electrically connected with.
This application provides the connected mode of two kinds of high-voltage capacitances 3：The first, as shown in Figures 1 to 4, the high-voltage capacitance 3 is electrically connected between the PINK pins of the TIA chips 2 and the negative electrode of PD chips 1, and the TIA chips 2 are connected with PD chips 1 indirectly, and TIA chips 2 and high voltage power supply are isolated；Second, as shown in figure 5, the PINK pins of the TIA chips 2 are directly electrically connected with the negative electrode of the PD chips 1, the high-voltage capacitance 3 is packaged in TIA chips 2, and the internal TIA chips 2 with high-voltage capacitance 3 are formed together, TIA chips 2 and high voltage power supply are isolated.Certainly, if there is other connected modes, it is connected as long as TIA chips 2 can be met by high-voltage capacitance 3 with PD chips 1, so as to be isolated with high voltage power supply, can reach the purpose of the present invention.
The light-receiving component also includes the conductive layer 5 to carry the PD chips 1 and/or TIA chips 2 and/or the support plate of high-voltage capacitance 34 and be arranged on support plate 4.
When the high-voltage capacitance 3 is electrically connected between the PINK pins of the TIA chips 2 and the negative electrode of PD chips 1, the high-voltage capacitance 3 can be routing electric capacity 31 or patch capacitor 32, specifically, patch capacitor 32 and routing electric capacity 31 are slightly different in occupation mode.The two end electrodes of patch capacitor 32 are required to be attached on conductive layer 5, it is therefore desirable to two mutually isolated conductive layers 5 are set on the second support plate 42；One end of routing electric capacity 31 need to be attached on conductive layer 5, and the other end need to extend gold thread, and then be electrically connected with other conductive components such as grade of line layer 6 by gold thread.
The structure of the conductive layer 5 also can be different, therefore the high-voltage capacitance 3 and the connected mode of conductive layer 5 are also different：
The high-voltage capacitance 3 is routing electric capacity 31, and the conductive layer 5 is integral, and one end of the high-voltage capacitance 3 is attached on conductive layer 5 completely, and the negative electrode of the other end of the routing electric capacity 31 and the PD chips 1 is electrically connected with by gold thread.The PINK pins of the conductive layer 5 and the TIA chips 2 are electrically connected with by gold thread, certainly, and according to other modes, such as conducting film also can reach the purpose of the present invention.
The high-voltage capacitance 3 is patch capacitor 32, and the conductive layer 5 includes the first conductive layer 51 and the second conductive layer 52 for being separated from each other setting, and the two ends of the patch capacitor 32 are attached on the first conductive layer 51 and the second conductive layer 52 respectively.It is electrically connected between the negative electrode of the PD chips 1 and first conductive layer 51, between the PINK pins of second conductive layer 52 and the TIA chips 2 by gold thread, certainly, according to other modes, such as conducting film also can reach the purpose of the present invention.
The high-voltage capacitance 3 is routing electric capacity 31, the conductive layer 5 includes the first conductive layer 51 and the second conductive layer 52 for being separated from each other setting, one end of the routing electric capacity 31 is attached on second conductive layer 52 completely, and the other end is electrically connected with first conductive layer 51 by gold thread.It is electrically connected between the negative electrode of first conductive layer 51 and the PD chips 1 and between the PINK pins of second conductive layer 52 and the TIA chips 2 by gold thread, certainly, according to other modes, such as conducting film also can reach the purpose of the present invention.
Specifically, the invention provides following examples：
Join shown in Fig. 1, introduce the light-receiving component in the application the first embodiment, in this embodiment, support plate 4 is included to carry the main support plate 40 of the PD chips 1 and high-voltage capacitance 3 and TIA chips 2, the first support plate 41 to carry the PD chips 1 and the second support plate 42 to carry the routing electric capacity 31.First support plate 41, the second support plate 42 are welded or are attached on main support plate 40.Conductive layer 5 is welded or is attached on second support plate 42.The light-receiving component also includes welding or the line layer 6 being attached on the first support plate 41, and the line layer 6 is connected respectively with the negative electrode and anode of the PD chips 1.Therefore, the line layer 6 also just becomes the cathode terminal and anode tap of PD chips 1.
In the present embodiment, the high-voltage capacitance 3 is routing electric capacity 31, and the back side of the routing electric capacity 31 is attached on the conductive layer 5 of the second support plate 42, and the positive cathode terminal with the PD chips 1 of the routing electric capacity 31 is electrically connected with by gold thread.PINK pin of the conductive layer 5 also with the TIA chips 2 is electrically connected with by gold thread.The PINA pins of the anode tap of the PD chips 1 and the TIA chips 2 are electrically connected with by gold thread.
The support plate 4 is insulation board, and is made of ceramic materials, and the conductive layer 5 is attached or is welded on the support plate 4.Certainly, if the support plate 4 is conductive material, as long as being fixed again with the grade of PD chips 1 after adding one layer of insulating materials in addition on support plate 4, it also can reach the purpose of the application.
Therefore, in present embodiment, the path of signal for line layer 6 → routing electric capacity 31 → conductive layer, 5 → TIA chips 2 of the support plate 41 of negative electrode → first of PD chips 1 PINK pins.The embodiment can provide complete high speed signal loop, so as to improve signal quality, and isolated DC component, improved high-frequency signal.In addition, the high voltage power supply and the front electric connection of the routing electric capacity 31, therefore, high voltage power supply can only be carried on PD chips 1, and is isolated with TIA chips 2.
Join shown in Fig. 2, introduce the light-receiving component in second of embodiment of the application, in the present embodiment, the part of the light-receiving component is roughly the same with the first embodiment, difference is that the high-voltage capacitance 3 is patch capacitor 32, and the conductive layer 5 includes the first conductive layer 51 and the second conductive layer 52 for being separated from each other setting.
Thus, in the present embodiment, the two ends of the patch capacitor 32 are attached on the first conductive layer 51 and the second conductive layer 52 respectively, the cathode terminal of first conductive layer 51 and the line layer 6 is electrically connected with by gold thread, and the PINK pins of second conductive layer 52 and the TIA chips 2 are electrically connected with by gold thread.
Therefore, in present embodiment, the path of signal for 6 → the first 51 → patch capacitor of conductive layer of line layer 32 → the second, 52 → TIA of conductive layer chips 2 of the support plate 41 of negative electrode → first of PD chips 1 PINK pins.This embodiment offers the embodiment that another high-voltage capacitance 3 is patch capacitor 32.In addition, the high voltage power supply is electrically connected with the first conductive layer 51, therefore, high voltage power supply can only be carried on PD chips 1, and is isolated with the TIA chips 2.
Join shown in Fig. 3, introduce the light-receiving component in the application the third embodiment, in the present embodiment, the support plate 4 is included to carry the main support plate 40 of the PD chips 1 and high-voltage capacitance 3 and TIA chips 2, the 3rd support plate 43 to carry the PD chips 1 and high-voltage capacitance 3, and the 3rd support plate 43 is attached or is welded on the main support plate 40.The conductive layer 5 includes the first conductive layer 51 and the second conductive layer 52 for being separated from each other setting, and welds or be attached on the 3rd support plate 43.
In the present embodiment, the high-voltage capacitance 3 is routing electric capacity 31, and the back side of the routing electric capacity 31 is attached on second conductive layer 52 completely, and positive and first conductive layer 51 of the routing electric capacity 31 is electrically connected with by gold thread.First conductive layer 51 is directly electrically connected with the negative electrode of the PD chips 1, and the PINK pins of second conductive layer 52 and the TIA chips 2 are electrically connected with.
Therefore, in present embodiment, the path of signal is：The PINK pins of 52 → TIA of the conductive layer chips 2 of the negative electrode of PD chips 1 → first 51 → routing of conductive layer electric capacity 31 → the second.The embodiment compares first embodiment and second embodiment, further shortens gold thread length, and the inductive effect that reduction gold thread is caused reduces the inductance of signal path, improves encapsulation bandwidth.In addition, the high voltage power supply is electrically connected with the first conductive layer 51, therefore, high voltage power supply can only be carried on PD chips 1, and is isolated with the TIA chips 2.
Join shown in Fig. 4, introduce in the light-receiving component in the application the third embodiment, the present embodiment, the part of the light-receiving component is roughly the same with the third embodiment, difference is the high-voltage capacitance 3 for patch capacitor 32.Thus, in the present embodiment, the two ends of the patch capacitor 32 are attached on the conductive layer 52 of the first conductive layer 51 and second respectively.
Thus, in present embodiment, the path of signal is：The PINK pins of 52 → TIA of the conductive layer chips 2 of the negative electrode of PD chips 1 → first 51 → patch capacitor of conductive layer 32 → the second, there is provided the embodiment that another electric capacity is patch capacitor 32 compared to 3rd embodiment for the embodiment.In addition, the high voltage power supply is electrically connected with the 3rd conductive layer 5, therefore, high voltage power supply can only be carried on PD chips 1, and is isolated with the TIA chips 25.
Join shown in Fig. 5, introduce the light-receiving component in the embodiment of the application the 5th, in the present embodiment, the support plate 4 is included to carry the main support plate 40 of PD chips 1 and TIA chips 2 and the first support plate 41 to carry the PD chips 1.The high-voltage capacitance 3 is integrated in TIA chips 2, the amplifier 21 for playing the main function of TIA chips 2 is provided with the TIA chips 2, the amplifier 21 also has PINK ends and PINA ends, accordingly, the high-voltage capacitance 3 is electrically connected between the PINK ends of the amplifier 21 and the PINK pins of TIA chips 2.Meanwhile, the PINK pins of the negative electrode of the PD chips 1 and the TIA chips 2 are electrically connected with by gold thread.
Therefore, in present embodiment, the path of signal is the PINK ends of PINK pins → 3 → amplifier of high-voltage capacitance 21 of negative electrode → TIA chips 2 of PD chips 1.The high voltage power supply is connected on the PINK pins, so that, although the high voltage power supply can be directly attached to TIA chips 2, but the amplifier 21 in TIA chips 2 is still isolated by the high-voltage capacitance 3 being integrated with TIA chips 2 with high voltage power supply.Such a embodiment compares above-mentioned 1 to 4 embodiment, and the path in loop is minimum, high frequency bandwidth also highest.
Simultaneously; as in embodiment 1 to 5, the PD chips 1 have two negative electrodes and an anode, accordingly; the TIA chips 2 also have two PINK electrodes and a PINA electrode; therefore, in above-described embodiment 1 to 5, the number of the high-voltage capacitance 3 has two; certainly; if the high-voltage capacitance 3 has several, as long as protection TIA chips 2 can be played a part of, the purpose of the application can reach.
In addition, the light-receiving component also includes filter capacitor 7, the filter capacitor 7 is connected with the high voltage power supply and is connected after the high-voltage capacitance 3, therefore, and resulting power supply is more stablized, and noise is smaller.
Fig. 7 is refer to, optical module of the application using the light-receiving component in the 1st to the 5th embodiment is introduced.The optical module includes Optical Transmit Unit, light receiving unit and controller 200, the Optical Transmit Unit includes laser 300, the clock and data recovery module 501 of laser drive unit 400 and first, the light receiving unit includes the light-receiving component 100 and second clock data recovery module 502 disclosed by embodiment 1 to 5, and the controller 200 is connected to control Optical Transmit Unit and light receiving unit with laser drive unit 400, the first clock and data recovery module 501 and second clock data recovery module 502.
It should be understood that, although the present specification is described in terms of embodiments, but not each embodiment is only comprising an independent technical scheme, this narrating mode of specification is only for clarity, the skilled in the art should refer to the specification as a whole, technical scheme in each embodiment may also be suitably combined to form that other embodiments which can be understood by those skilled in the art.
A series of detailed description the illustrating only for the feasibility embodiment of the application of those listed above; they and be not used to limit the application protection domain, all equivalent implementations made without departing from the application skill spirit or change should be included within the protection domain of the application.
Claims (9)
1. a kind of light-receiving component, the light-receiving component is electrically connected in high voltage power supply, it is characterised in that the light-receiving component includes photodetector, trans-impedance amplifier and the high-voltage capacitance being electrically connected with each other；The photodetector is mutually electrically connected with high voltage power supply, and trans-impedance amplifier is isolated by the high-voltage capacitance with high voltage power supply, and the trans-impedance amplifier is electrically connected with by the high-voltage capacitance and the photodetector.
2. light-receiving component according to claim 1, it is characterized in that, the photodetector and trans-impedance amplifier are packaged into PD chips and TIA chips respectively, the TIA chips include PINK pins and PINA pins, the PD chips have negative electrode and anode, the high-voltage capacitance is electrically connected between the negative electrode of PINK pins and PD chips, and the anode of the PINA pins and PD chips is electrically connected with.
3. light-receiving component according to claim 2, it is characterized in that, the TIA chips include two PINK pins and a PINA pin, the PD chips have two negative electrodes and an anode, and a high-voltage capacitance is connected between two PINK pins of the TIA chips and two negative electrodes of the PD chips.
4. light-receiving component according to claim 2, it is characterized in that, the light-receiving component also includes the conductive layer being electrically connected with the high-voltage capacitance, the high-voltage capacitance is routing electric capacity, one end of the high-voltage capacitance is attached on conductive layer, and the negative electrode of the other end of the high-voltage capacitance and the PD chips is electrically connected with by gold thread；The PINK pins of the conductive layer and the TIA chips are electrically connected with by gold thread.
5. light-receiving component according to claim 2, it is characterized in that, the light-receiving component also includes the conductive layer being electrically connected with the high-voltage capacitance, the high-voltage capacitance is patch capacitor, the conductive layer includes the first conductive layer and the second conductive layer for being separated from each other setting, and the two ends of the patch capacitor are attached on the first conductive layer and the second conductive layer respectively；It is electrically connected between the negative electrode of the PD chips and first conductive layer and between the PINK pins of second conductive layer and the TIA chips by gold thread.
6. light-receiving component according to claim 2, it is characterized in that, the light-receiving component also includes the conductive layer being electrically connected with the high-voltage capacitance, the high-voltage capacitance is routing electric capacity, the conductive layer includes the first conductive layer and the second conductive layer for being separated from each other setting, one end of the routing electric capacity is attached on second conductive layer, and the other end is electrically connected with first conductive layer by gold thread；It is electrically connected between the negative electrode of first conductive layer and the PD chips and between the PINK pins of second conductive layer and the TIA chips by gold thread.
7. light-receiving component according to claim 1, it is characterised in that the high-voltage capacitance is packaged together to form the internal trans-impedance amplifier with high-voltage capacitance with the trans-impedance amplifier.
8. the light-receiving component according to any one in claim 2 and 7, it is characterised in that the light-receiving component also includes the support plate for carrying the photodetector, trans-impedance amplifier and high-voltage capacitance, and the material of the support plate is ceramics.
9. a kind of optical module, it is characterized in that, the optical module includes Optical Transmit Unit, light receiving unit and controller, the Optical Transmit Unit includes laser, laser drive unit and the first clock and data recovery module, the light receiving unit includes the light-receiving component and second clock data recovery module any one of claim 1 ~ 9, and the controller is connected to control Optical Transmit Unit and light receiving unit with the laser drive unit, the first clock and data recovery module and second clock data recovery module.
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| CN201610265062.4A CN107317637B (en) | 2016-04-26 | 2016-04-26 | Light receiving module and optical module |
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| CN201610265062.4A CN107317637B (en) | 2016-04-26 | 2016-04-26 | Light receiving module and optical module |
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| CN107317637B CN107317637B (en) | 2020-10-27 |
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| CN110380787A (en) * | 2018-04-13 | 2019-10-25 | 住友电气工业株式会社 | Receiver assembly |
| CN111865429A (en) * | 2019-04-30 | 2020-10-30 | 深圳市聚飞光电股份有限公司 | Photoelectric receiver and manufacturing method thereof |
| CN112398540A (en) * | 2019-08-14 | 2021-02-23 | 苏州旭创科技有限公司 | Optical module and signal processing system comprising same |
| CN113488455A (en) * | 2021-05-24 | 2021-10-08 | 武汉敏芯半导体股份有限公司 | Anti-interference high-speed light receiving device |
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| CN110380787A (en) * | 2018-04-13 | 2019-10-25 | 住友电气工业株式会社 | Receiver assembly |
| CN110380787B (en) * | 2018-04-13 | 2024-02-13 | 住友电气工业株式会社 | Receiver assembly |
| CN111865429A (en) * | 2019-04-30 | 2020-10-30 | 深圳市聚飞光电股份有限公司 | Photoelectric receiver and manufacturing method thereof |
| CN112398540A (en) * | 2019-08-14 | 2021-02-23 | 苏州旭创科技有限公司 | Optical module and signal processing system comprising same |
| CN112398540B (en) * | 2019-08-14 | 2022-02-15 | 苏州旭创科技有限公司 | Optical module and signal processing system comprising same |
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