CN106054412A - Surface-mounted bias network without self-excitation - Google Patents
Surface-mounted bias network without self-excitation Download PDFInfo
- Publication number
- CN106054412A CN106054412A CN201610304577.0A CN201610304577A CN106054412A CN 106054412 A CN106054412 A CN 106054412A CN 201610304577 A CN201610304577 A CN 201610304577A CN 106054412 A CN106054412 A CN 106054412A
- Authority
- CN
- China
- Prior art keywords
- film resistor
- substrate
- self
- excitation
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
- H04B10/5057—Laser transmitters using external modulation using a feedback signal generated by analysing the optical output
- H04B10/50575—Laser transmitters using external modulation using a feedback signal generated by analysing the optical output to control the modulator DC bias
Abstract
The invention relates to a surface-mounted bias network without self-excitation and a manufacture method for the same. The network is characterized in that a thin-film resistor in a bias circuit is plated on the upper surface of a ceramic baseplate; a conical inductor is tightly attached to the thin-film resistor; and the conical inductor is connected and welded to the thin-film resistor in parallel. One or more than one through holes are formed in the ceramic baseplate. Two ends of the thin-film resistor on the upper surface of the ceramic baseplate are connected by wires to electrodes on the lower surface of the ceramic baseplate. Through in-parallel connection between the thin-film resistor and the conical inductor, a quality factor of the in-parallel loop is reduced, so that a self-excitation frequency of the loop is restrained effectively. The electrodes of the bias network are located on the back face of the ceramic baseplate, so that the network can be directly mounted on the surface of the corresponding bias circuit, and assembly of the bias network in the circuit becomes convenient.
Description
Technical field
The invention belongs to communication technical field, particularly relate to a kind of for high speed device offer direct current biasing, it is achieved surface-mount type
Assembling, without the network providing bias voltage of self-excitation.
Background technology
After entering 21 century, fiber optic communication is big with its transport information capacity, is lost low, and speed is high, anti-electromagnetic interference capability
The advantage such as strong, becomes the key technology in modern communications field.And promoted the development of two-forty high information quantity business, make telecommunications
Network starts to stride forward towards the ultra broadband epoch.At present, the development of the technology such as high definition video steaming, cloud computing, need higher broadband badly
Access capability, has higher requirement to optical fiber telecommunications system.This promotes high-speed optical devices to develop to higher rate.At present,
The bandwidth of the electroabsorption modulator reported is more than 100GHz, and the bandwidth of directly modulated lasers is the most more than 20GHz.And based on just
Degree of taking, the consideration of the aspects such as power consumption, the integrated level of these optical devices improves constantly, and package dimension is more and more less.So, right
The requirement coordinating the peripheral circuit of opto-electronic device operation becomes the highest.Especially drive the biasing networks of optical device work, right
Photoelectric device performance impact highly significant.Such as in the middle of directly modulated lasers design, biasing networks provides for directly modulated lasers
The DC current of normal work, when this electric current is higher than laser threshold current, laser works is in stimulated radiation state.Now
High Speed Modulation current coupling is superimposed upon on bias current, i.e. realizes the electric current modulation to laser.But owing to biasing networks exists solid
There are resonant frequency and laser instrument anode to be connected with shell building site, often make the most straight tune electric current that bias direct current is produced crosstalk.
Thus have influence on the multinomial property such as smooth, the fidelity of modulated signal, the bit error rate of the bandwidth of operation of directly modulated lasers, S21 curve
Energy.On the other hand, the original paper such as actually used inductance in industry, especially taper inductance makes biasing networks and also can there is pad pair
Position is poor, the problems such as rosin joint phenomenon easily occurs.
On the one hand this biasing networks that the present invention proposes uses taper inductance effectively to decay the interior of biasing networks
Resonance, it is suppressed that biasing networks permeability at inherently resonant frequency.Meanwhile, inductance and resistance are fixed on substrate it
On, assembling biasing networks in small space can be substantially reduced by its direct Surface Mount in the middle of the peripheral circuit of photoelectric device
Difficulty.
Summary of the invention
The present invention proposes biasing networks without self-excitation of a kind of surface-mount type and preparation method thereof, for providing straight for photoelectric device
Stream bias current, voltage.This network effectively suppresses photoelectric device to modulate the electric current crosstalk to direct current biasing when High-speed Electric is modulated,
Simultaneously by special assembly method so that this biasing networks can Surface Mount in the middle of the circuit network of photoelectric device, be greatly reduced
The installation difficulty of this photoelectric device biasing networks.
For achieving the above object, the present invention provides the biasing networks without self-excitation of a kind of surface-mount type to include:
One substrate, it has one or more through hole;
One film resistor, is plated on the upper surface of substrate;
One electrode, is plated on base lower surface;
One taper inductance, its two pins welds with the two ends of film resistor respectively.
Wherein substrate is ceramic substrate or traditional PCB plate.Film resistor is the arbitrary shape film resistor having two pins.
The present invention also provides for the preparation method of the biasing networks without self-excitation of this surface-mount type, including:
Being connected with electrode respectively through through hole by the two pins of film resistor, the position of electrode can directly be drawn with peripheral circuit
Foot weld so that whole device can Surface Mount in the middle of peripheral circuit, taper inductance is affixed on the upper surface of substrate.
Biasing networks without self-excitation of a kind of surface-mount type that the present invention proposes and preparation method thereof has the advantages that
The effectively free-running frequence intensity in the middle of suppression biasing networks so that high-speed electrical signals is on the impact of direct current biasing significantly
Reduce.
Employing surface-mount type designs so that whole biasing networks is electric in photoelectric device by two direct Surface Mounts of pin of bottom
In the middle of road, enormously simplify mounting process, reduce installation difficulty.
Accompanying drawing explanation
Understand and implement the present invention for ease of those of ordinary skill in the art, below in conjunction with the accompanying drawings and detailed description of the invention pair
The present invention is described in further detail, wherein:
Fig. 1 is present configuration schematic diagram;
Fig. 2 is the graphics in the embodiment of the present invention;
Fig. 3 is the schematic diagram of serpentine resistive in the embodiment of the present invention;
Fig. 4 is the front view in the middle of the embodiment of the present invention;
Fig. 5 is the side view in the middle of the embodiment of the present invention.
Description of reference numerals:
1-taper inductance;2-film resistor;3-substrate;4-through hole;5-through hole;6-electrode;7-electrode;8-taper inductance;
9-through hole;10-through hole;11-substrate;The snakelike film resistor of 12-;13-electrode;14-electrode;15-connecting lead wire;16-electrode;
17-electrode;18-film resistor;19-taper inductance.
Detailed description of the invention
It is illustrated in figure 1 the structural representation of the present invention, substrate (3) has one or more through hole (4), (5);Thin-film electro
Resistance (2), is plated on the upper surface of substrate (3);Electrode (6), (7), be plated on substrate (3) lower surface;Taper inductance (1), is affixed on substrate
(3) upper surface, its two pins two ends with film resistor (2) respectively are welded;Electrode (6), (7) position can be directly with peripheral
Circuit pin weld so that whole device can Surface Mount in the middle of peripheral circuit;The two ends of film resistor (2) are connected by wire
On electrode (6), (7);By film resistor, (2 quality factor that make this shunt circuit in parallel with taper inductance (1) drop
It is low, so that the free-running frequence in the middle of loop is well suppressed.
Owing to taper inductance 1 has attenuation to microwave especially frequency electromagnetic waves, the Q of biasing networks can be greatly reduced
Value, such that it is able to reduce the self-excitation of biasing networks, reduces the modulated signal impact on direct current biasing.
Preferably, the film resistor in the present invention is a kind of serpentine resistive, is illustrated in figure 2 the graphics of the present embodiment,
Wherein 8 is taper inductance, welds with the parallel connection of snakelike film resistor 12, and 9,10 is the through hole on substrate 11, makes film resistor permissible
It is connected, as shown in Figure 4 through through hole with the electrode 13,14 in substrate bottom surface.Fig. 3 is the structural representation of a kind of serpentine resistive,
This serpentine resistive can well increase the resistance value of film resistor so that it is matches with taper inductance resistance, thus reaches
The effect of best isolation microwave signal.
Preferably, the through hole 4,5 of the present invention and electrode 6,7, as it is shown in figure 1, weld according in practical set peripheral circuit
Point position be adjusted, make electrode 6,7 to be directly connected with peripheral circuit solder joint, thus reach can directly Surface Mount in periphery
Effect in the middle of circuit.
Preferably, can drawing by break-through substrate between film resistor 18 and substrate bottom surface electrode 16,17 in the middle of the present invention
Line 15 is connected, and such as Fig. 5, so that electrode 6,7 can be located at any part of substrate, facilitates the connection between peripheral circuit,
Reaching can directly Surface Mount effect in the middle of peripheral circuit.
Additionally, the above-mentioned definition to each element and method be not limited in embodiment is mentioned various concrete structures,
Shape or mode, its structure can be carried out replacing with knowing simply by those of ordinary skill in the art, as: film resistor 2
Shape can be designed as various shape, and taper inductance 1 can be Multiple Type etc..Further, appended accompanying drawing is to simplify and made
Use for illustrating.Device number of packages amount, shape and size shown in accompanying drawing can be modified according to practical situation, and the joining of device
Put and be likely more complexity.
Above-described detailed description of the invention is the better embodiment of the present invention, and non-once limits the concrete of the present invention
Practical range, the scope of the present invention includes being not limited to this detailed description of the invention, and all shapes according to the present invention, structure are done
Equivalence change is the most within the scope of the present invention.
Claims (4)
1. surface-mount type is without a biasing networks for self-excitation, including:
One substrate (3), it has one or more through hole (4), (5);
One film resistor (2), is plated on the upper surface of substrate (3);
One electrode (6), (7), be plated on substrate (3) lower surface;
One taper inductance (1), is affixed on the upper surface of substrate (3), and its two pins two ends with film resistor (2) respectively are welded;
Wherein, electrode (6), (7) position can directly weld with peripheral circuit pin so that whole device can Surface Mount in periphery
In the middle of circuit;The two ends of film resistor (2) are connected to electrode (6) by wire, on (7);By film resistor, (2 is electric with taper
The parallel connection of sense (1) makes the quality factor of this shunt circuit reduce, so that the free-running frequence in the middle of loop is well pressed down
System.
Surface-mount type the most according to claim 1 is ceramic substrate or biography without the biasing networks of self-excitation, wherein said substrate (3)
System pcb board.
Surface-mount type the most according to claim 1 is without the biasing networks of self-excitation, and wherein film resistor (2) is the Serpentis having two pins
Shape film resistor.
Surface-mount type the most according to claim 3 is without the biasing networks of self-excitation, and wherein the two pins of film resistor (2) is through logical
Hole (4), (5) are connected with electrode (6), (7) respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610304577.0A CN106054412B (en) | 2016-05-10 | 2016-05-10 | Biasing networks of the surface-mount type without self-excitation |
Applications Claiming Priority (1)
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CN201610304577.0A CN106054412B (en) | 2016-05-10 | 2016-05-10 | Biasing networks of the surface-mount type without self-excitation |
Publications (2)
Publication Number | Publication Date |
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CN106054412A true CN106054412A (en) | 2016-10-26 |
CN106054412B CN106054412B (en) | 2018-10-09 |
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CN201610304577.0A Active CN106054412B (en) | 2016-05-10 | 2016-05-10 | Biasing networks of the surface-mount type without self-excitation |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106338628A (en) * | 2016-11-16 | 2017-01-18 | 中国电子科技集团公司第四十研究所 | Protection device for power-frequency interference of broadband microwave access |
CN107946323A (en) * | 2017-11-22 | 2018-04-20 | 华进半导体封装先导技术研发中心有限公司 | A kind of bias device and production method |
Citations (4)
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US6344781B1 (en) * | 2000-09-14 | 2002-02-05 | Stephen Amram Slenker | Broadband microwave choke and a non-conductive carrier therefor |
US20040227596A1 (en) * | 2003-02-11 | 2004-11-18 | Nguyen John A. | Ultra broadband inductor assembly |
US20060139124A1 (en) * | 2004-12-23 | 2006-06-29 | Fojas Uriel C | Circuit assembly with conical inductor |
CN103839661A (en) * | 2014-03-12 | 2014-06-04 | 华为技术有限公司 | Conical inductor, printed circuit board and optical module |
-
2016
- 2016-05-10 CN CN201610304577.0A patent/CN106054412B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344781B1 (en) * | 2000-09-14 | 2002-02-05 | Stephen Amram Slenker | Broadband microwave choke and a non-conductive carrier therefor |
US20040227596A1 (en) * | 2003-02-11 | 2004-11-18 | Nguyen John A. | Ultra broadband inductor assembly |
US20060139124A1 (en) * | 2004-12-23 | 2006-06-29 | Fojas Uriel C | Circuit assembly with conical inductor |
CN103839661A (en) * | 2014-03-12 | 2014-06-04 | 华为技术有限公司 | Conical inductor, printed circuit board and optical module |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106338628A (en) * | 2016-11-16 | 2017-01-18 | 中国电子科技集团公司第四十研究所 | Protection device for power-frequency interference of broadband microwave access |
CN106338628B (en) * | 2016-11-16 | 2019-03-01 | 中国电子科技集团公司第四十一研究所 | A kind of protective device of wide-band microwave access Hz noise |
CN107946323A (en) * | 2017-11-22 | 2018-04-20 | 华进半导体封装先导技术研发中心有限公司 | A kind of bias device and production method |
CN107946323B (en) * | 2017-11-22 | 2020-05-01 | 华进半导体封装先导技术研发中心有限公司 | Bias device and manufacturing method |
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CN106054412B (en) | 2018-10-09 |
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