CN110865434A - Integrated microwave circuit - Google Patents
Integrated microwave circuit Download PDFInfo
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- CN110865434A CN110865434A CN201911154129.7A CN201911154129A CN110865434A CN 110865434 A CN110865434 A CN 110865434A CN 201911154129 A CN201911154129 A CN 201911154129A CN 110865434 A CN110865434 A CN 110865434A
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- circuit
- radio frequency
- integrated microwave
- thin film
- circuit board
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses an integrated microwave circuit applied to an array integrated optical module, wherein the integrated microwave circuit comprises: the radio frequency circuit is arranged on the upper surface of the circuit board and is used for completing the transmission of radio frequency signals from the photoelectric chip to the outside of the integrated microwave circuit; the direct current bias circuit is arranged on the lower surface of the same circuit board and is used for providing bias current or voltage for the photoelectric chip; and the intermediate dielectric layer is arranged between the radio frequency circuit and the direct current bias circuit. The integrated microwave circuit disclosed by the invention integrates elements such as a radio frequency circuit, a direct current bias circuit, a resistor, a capacitor and the like on a layer of circuit board, can simultaneously meet the transmission requirements of radio frequency electric signals and bias electric signals, has the advantages of small volume and high integration level, and is suitable for developing an ultra-compact array integrated optical module.
Description
Technical Field
The invention relates to the field of photoelectron/microelectronic devices, in particular to an integrated microwave circuit applied to an array integrated optical module.
Background
With the rapid increase of broadband traffic, optical communication devices are developing toward integration, high capacity, miniaturization, and high bandwidth. The trend toward high integration makes array integration a research hotspot.
The microwave circuit structure is used as an important component of the array integrated optical module, mainly comprises a radio frequency circuit and a direct current bias circuit, and has the functions of realizing the transition transmission of radio frequency signals from the photoelectric chip to the tube shell and providing bias voltage or current required by normal work for the photoelectric chip. When the microwave circuit structure and the photoelectric chip work cooperatively, the microwave circuit needs to include a large number of components such as capacitors, resistors, inductors and the like. The traditional microwave circuit structure is that a radio frequency circuit and a microwave circuit are independently designed on two circuit boards, and are assembled in a micro-package in parallel or vertical arrangement modes, and independent capacitance resistance elements are arranged on the radio frequency circuit board and a direct current bias circuit, so that a large amount of space is occupied, the structure is complex, and the structure design of wiring and devices is not facilitated.
Disclosure of Invention
Technical problem to be solved
The present invention provides an integrated microwave circuit applied to an array integrated optical module to at least partially solve the above-mentioned technical problems.
(II) technical scheme
According to an aspect of the present invention, there is provided an integrated microwave circuit applied to an array integrated optical module, including:
the radio frequency circuit is arranged on the upper surface of the circuit board and is used for completing the transmission of radio frequency signals from the photoelectric chip to the outside of the integrated microwave circuit;
the direct current bias circuit is arranged on the lower surface of the same circuit board and is used for providing bias current or voltage for the photoelectric chip; and
an intermediate dielectric layer disposed between the RF circuit and the DC bias circuit, wherein in some embodiments, the intermediate dielectric layer is made of AlN or Al2O3A material.
In some embodiments of the present invention, the radio frequency circuit comprises: coplanar waveguide structures, microstrip line structures, stripline structures or differential transmission line structures. In some embodiments, the characteristic impedance of the coplanar waveguide structure, the microstrip line structure, or the stripline structure is 50 ohms, and the characteristic impedance of the differential transmission line structure is 100 ohms.
In some embodiments of the present invention, the rf circuit further comprises:
the first thin film capacitor is arranged in the circuit board, the capacitance value of the first thin film capacitor is in a pF magnitude order, and the resonance peak in the high-frequency signal is shifted to the right;
the first film resistor is arranged in the circuit board to realize impedance matching in the radio frequency circuit and take out a high-frequency signal; and
the first film inductor is arranged inside the circuit board and used for realizing parasitic parameter compensation in the radio frequency circuit.
In some embodiments of the present invention, the dc bias circuit comprises:
the second thin film capacitor is arranged in the circuit board, and the capacitance value of the second thin film capacitor is in nF magnitude order, so that direct current filtering is realized;
the second film resistor is arranged in the circuit board to prevent the circuit direct current from being overlarge; and
and the second thin film inductor is arranged inside the circuit board and used for providing working voltage or current for the photoelectric chip.
In some embodiments of the present invention, the integrated microwave circuit further comprises:
the metal via hole is used for realizing transition connection between the radio frequency circuit and the direct current bias circuit;
and the side surface metallization structure is used for realizing the connection of the ground electrodes on the upper surface and the lower surface of the coplanar waveguide structure.
In some embodiments of the present invention, the first thin film capacitor and the second thin film capacitor are both configured as follows: the surface of the upper electrode, the surface of the lower electrode and the surface of the dielectric layer are of concave-convex structures, and further, the contact surfaces of the upper electrode, the lower electrode and the dielectric layer are complementary and mutually attached.
In some embodiments of the present invention, there are a plurality of coplanar waveguide structures, each coplanar waveguide structure having a ground electrode, the ground electrodes of the coplanar waveguide structures being connected.
(III) advantageous effects
According to the technical scheme, the integrated microwave circuit applied to the array integrated optical module provided by the invention has the following beneficial effects:
the invention integrates the radio frequency circuit, the direct current bias circuit, the capacitor, the resistor, the inductor and other components on the single-layer circuit board to form an integrated microwave circuit. The shape of the internal medium of the integrated thin-film capacitor adopts a concave-convex structure, so that the area of the electrode is greatly increased, and the value of the thin-film capacitor can meet the use requirement. The integrated microwave circuit structure reduces the micro-assembly process and the design difficulty of an internal circuit when the array integrated optical module is packaged, reduces the occupied volume of the microwave circuit, has the advantages of simple structure, small volume and high integration level, and can be suitable for the development of the ultra-compact array integrated optical module.
Drawings
FIG. 1 is a top view of an integrated microwave circuit structure according to an embodiment of the present invention;
FIG. 2 is a bottom view of an integrated microwave circuit configuration according to one embodiment of the present invention;
FIG. 3 is a left side view of an integrated microwave circuit configuration according to one embodiment of the present invention;
FIG. 4 is a perspective view of an integrated microwave circuit structure according to an embodiment of the present invention;
fig. 5 is a schematic diagram of an application of the integrated microwave circuit structure applied to a receiving module of a detector array according to an embodiment of the present invention.
Description of the symbols:
1-coplanar waveguide 2-first and second thin film capacitors
3-first and second film resistors 4-metal via hole
5-side metallization structure 6-detector array chip
7-AWG shunt 8-high frequency tube shell
9-heat sink cushion block 10-direct current bias circuit
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
Referring to fig. 1 to fig. 4, an exemplary embodiment of the integrated microwave circuit provided in the present invention is shown, in which the integrated microwave circuit includes:
the radio frequency circuit is arranged on the upper surface of the circuit board and used for completing transmission of radio frequency signals from the photoelectric chip to the outside of the integrated microwave circuit, and further the radio frequency circuit comprises:
the coplanar waveguide structure 1, in other embodiments, the coplanar waveguide structure 1 may also be a microstrip line structure, a stripline structure, or a differential transmission line structure, and is not limited. In some embodiments, the characteristic impedance of the coplanar waveguide structure 1, the microstrip line structure or the stripline structure is 50 ohms, and the characteristic impedance of the differential transmission line structure is 100 ohms; and
the first thin film capacitor is arranged in the circuit board, the capacitance value of the first thin film capacitor is in a pF magnitude order, and the resonance peak in the high-frequency signal is shifted to the right; the first film resistor is arranged in the circuit board to realize impedance matching in the radio frequency circuit and take out a high-frequency signal; and the first film inductor is arranged inside the circuit board and used for realizing parasitic parameter compensation in the radio frequency circuit.
A dc bias circuit 10 disposed on a lower surface of the circuit board, wherein the dc bias circuit 10 is configured to provide a bias current or voltage to the optoelectronic chip, and further, the dc bias circuit 10 includes:
the second thin film capacitor is arranged in the circuit board, and the capacitance value of the second thin film capacitor is in nF magnitude order, so that direct current filtering is realized;
the second film resistor is arranged in the circuit board to prevent the circuit direct current from being overlarge; and
and the second thin film inductor is arranged inside the circuit board and used for providing working voltage or current for the photoelectric chip.
An intermediate dielectric layer disposed between the RF circuit and the DC bias circuit, wherein in some embodiments, the intermediate dielectric layer is made of AlN or Al2O3A material. And
and the metal via hole 4 is used for realizing transition connection between the radio frequency circuit and the direct current bias circuit.
And the side surface metallization structure 5 is used for realizing the connection of the ground electrodes on the upper surface and the lower surface of the coplanar waveguide structure 1.
Based on above-mentioned integrated microwave circuit, wherein:
in some embodiments, the first thin film capacitor and the second thin film capacitor are both configured as follows: the surface of the upper electrode, the surface of the lower electrode and the surface of the dielectric layer are of concave-convex structures, and further, the contact surfaces of the upper electrode, the lower electrode and the dielectric layer are complementary and mutually attached.
In some embodiments, there are a plurality of coplanar waveguide structures 1, each coplanar waveguide structure 1 has a ground electrode, and the ground electrodes of the coplanar waveguide structures 1 are connected.
In another exemplary embodiment of the present invention, a detector array receiving module employing the above-described integrated microwave circuit structure is provided. FIG. 5 is a schematic diagram of a detector array receiving module configuration according to the embodiment of the invention.
Referring to fig. 5, the structure of the detector array receiving module of the present embodiment includes: a detector high-frequency tube shell 8, an AWG branching unit 7, a detector array chip 6 and an integrated microwave circuit of the invention.
The AWG branching unit 7 is arranged inside the high-frequency tube shell 8 of the detector and introduces external optical signals into the high-frequency tube shell 8 of the detector; the detector array chip 6 is arranged in the detector high-frequency tube shell 8 and corresponds to the AWG branching unit 7, and converts optical signals into electric signals; the integrated microwave circuit is arranged in the high-frequency tube shell of the detector in the form of a circuit board structure, and comprises an upper surface and a lower surface, wherein the upper surface comprises a radio frequency circuit which is used for completing the transmission of radio frequency signals from the photoelectric chip to the outside of the microwave circuit structure; the lower surface comprises a direct current bias circuit 10, and the direct current bias circuit 10 is used for providing bias current or voltage for the photoelectric chip; the integrated microwave circuit board also comprises components such as a thin film resistor (comprising a first thin film resistor and a second thin film resistor) and a thin film capacitor (comprising a first thin film capacitor and a second thin film capacitor), wherein the thin film resistor is positioned in the circuit board and can be used as a matching resistor or a divider resistor; and the thin film capacitor is positioned inside the circuit board and can be used as a filter capacitor or a bypass capacitor.
It should be further noted that, in the above-mentioned thin film resistor and thin film capacitor: the capacitor in the high-frequency circuit and the capacitor of the direct current bias circuit are in the same form and are composed of an upper surface, a lower surface and a medium, and the difference is that the two capacitance values are different; the capacitance value in the direct current bias circuit is nF magnitude and is used for filtering ripples in the direct current circuit, and the capacitance pF magnitude in the radio frequency circuit is used for shifting a resonance peak in a high-frequency signal to the right to realize high-frequency performance. Similarly, the resistor in the high-frequency circuit and the resistor in the direct-current bias circuit are in the same form and are in a thin film form and are directly grown between the two electrodes, and the difference is that the two resistance values are different; the resistor in the DC bias circuit is used for preventing the circuit DC from being overlarge, and the resistor in the radio frequency circuit is used for realizing impedance matching in the circuit and the function of extracting high-frequency signals. And the capacitance resistor between the high-frequency circuit and the direct current bias circuit is connected through the metal through hole. In some embodiments, the thin film resistor may be manufactured by a vacuum sputtering technique, and the resistance of the thin film resistor may be tunable by changing the thickness of the square resistor or the resistivity of the material, etc., as required.
In this embodiment, referring to fig. 5, the two four-way AWG splitters 7 with up-down symmetry are used as light incident interfaces, and the corresponding detector array chips 6 include two four-channel detector array chips with up-down symmetry. The AWG splitter 7 makes the optical signal incident perpendicular to each of the detector chips 6 through a 45-degree slope.
In this embodiment, referring to fig. 5, the detector array chip 6 includes two four-channel detector array chips that are symmetrical up and down, and the detector array chips convert the optical signals input from each channel into electrical signals.
In this embodiment, referring to fig. 5, the microwave integrated circuit includes two integrated microwave circuits, a single integrated microwave circuit includes an upper surface and a lower surface, a radio frequency circuit is disposed on the upper surface, a direct current bias circuit is disposed on the lower surface, the upper surface and the lower surface of the integrated microwave circuit are transited through a metal via 4, and ground electrodes of coplanar waveguide structures in the radio frequency circuit are connected through a side metallization structure 5. Two integrated microwave circuits are placed in the forward direction, the lower surface of the upper circuit board is connected with the upper detector array chip through flip-chip welding, and the upper surface of the lower circuit board is connected with the lower detector array chip through flip-chip welding. Bias voltage is provided for the two symmetrical detector array chips through an integrated microwave circuit structure; and the electrical signal converted by the detector chip is transmitted to the outside of the high-frequency tube shell through the integrated microwave circuit structure.
In summary, the structure of the eight-channel integrated miniaturized detector array receiving module is disclosed.
Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present invention.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate contents of the embodiments of the present invention. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An integrated microwave circuit, comprising:
the radio frequency circuit is arranged on the upper surface of the circuit board and is used for completing transmission of radio frequency signals from the photoelectric chip to the outside of the integrated microwave circuit;
the direct current bias circuit is arranged on the lower surface of the same circuit board and used for providing bias current or voltage for the photoelectric chip; and
and the middle dielectric layer is arranged between the radio frequency circuit and the direct current bias circuit.
2. The integrated microwave circuit of claim 1, wherein the radio frequency circuit comprises: coplanar waveguide structures, microstrip line structures, stripline structures or differential transmission line structures.
3. The integrated microwave circuit of claim 2, wherein the characteristic impedance of the coplanar waveguide structure, the microstrip line structure and the stripline structure is 50 ohms, and the characteristic impedance of the differential transmission line structure is 100 ohms.
4. The integrated microwave circuit of claim 1 or 3, wherein the radio frequency circuit further comprises:
the first thin film capacitor is arranged in the circuit board, the capacitance value of the first thin film capacitor is in a pF magnitude order, and the resonance peak in the high-frequency signal is shifted to the right;
the first thin film resistor is arranged in the circuit board and used for realizing impedance matching in the radio frequency circuit and taking out a high-frequency signal; and
the first film inductor is arranged inside the circuit board and used for realizing parasitic parameter compensation in the radio frequency circuit.
5. The integrated microwave circuit of claim 4, wherein the DC bias circuit comprises:
the second thin film capacitor is arranged in the circuit board, and the capacitance value of the second thin film capacitor is in nF magnitude order, so that direct current filtering is realized;
the second thin film resistor is arranged in the circuit board and used for preventing the direct current of the circuit from being overlarge; and
and the second thin film inductor is arranged inside the circuit board and used for providing working voltage or current for the photoelectric chip.
6. The integrated microwave circuit of claim 5, further comprising:
the metal via hole is used for realizing transition connection between the radio frequency circuit and the direct current bias circuit;
and the side surface metallization structure is used for realizing the connection of the ground electrodes on the upper surface and the lower surface of the coplanar waveguide structure.
7. The integrated microwave circuit of claim 6, wherein the first and second film capacitors are each configured as: the surface of the upper electrode, the surface of the lower electrode and the surface of the dielectric layer are of concave-convex structures.
8. The integrated microwave circuit of claim 7, wherein the contact surfaces of the top electrode, the bottom electrode, and the dielectric layer are complementary and attached to each other.
9. The integrated microwave circuit of claim 8 wherein there are a plurality of coplanar waveguide structures, each of the coplanar waveguide structures having a ground electrode, the ground electrodes of the coplanar waveguide structures being connected.
10. The integrated microwave circuit of claim 9, wherein the material of the intermediate dielectric layer is AlN or Al2O3A material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911154129.7A CN110865434B (en) | 2019-11-21 | 2019-11-21 | Integrated microwave circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911154129.7A CN110865434B (en) | 2019-11-21 | 2019-11-21 | Integrated microwave circuit |
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| Publication Number | Publication Date |
|---|---|
| CN110865434A true CN110865434A (en) | 2020-03-06 |
| CN110865434B CN110865434B (en) | 2021-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911154129.7A Active CN110865434B (en) | 2019-11-21 | 2019-11-21 | Integrated microwave circuit |
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| CN (1) | CN110865434B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284390A (en) * | 2021-12-23 | 2022-04-05 | 中国电子科技集团公司第四十四研究所 | Vertical incidence ultra-wideband integrated photoelectric detector chip and manufacturing method thereof |
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| JP3973402B2 (en) * | 2001-10-25 | 2007-09-12 | 株式会社日立製作所 | High frequency circuit module |
| CN203040004U (en) * | 2012-12-06 | 2013-07-03 | 上海无线电设备研究所 | Circuit board used for frequency generator |
| CN106024387A (en) * | 2015-03-31 | 2016-10-12 | Tdk株式会社 | Thin film capacitor |
| CN108540234A (en) * | 2018-04-12 | 2018-09-14 | 中国科学院半导体研究所 | Detector integrated array structure and detector receiving module |
| US20180287705A1 (en) * | 2017-03-30 | 2018-10-04 | Applied Optoelectronics, Inc. | Multilayered flexible printed circuit with both radio frequency (rf) and dc transmission lines and an optical transceiver using same |
-
2019
- 2019-11-21 CN CN201911154129.7A patent/CN110865434B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3973402B2 (en) * | 2001-10-25 | 2007-09-12 | 株式会社日立製作所 | High frequency circuit module |
| CN203040004U (en) * | 2012-12-06 | 2013-07-03 | 上海无线电设备研究所 | Circuit board used for frequency generator |
| CN106024387A (en) * | 2015-03-31 | 2016-10-12 | Tdk株式会社 | Thin film capacitor |
| US20180287705A1 (en) * | 2017-03-30 | 2018-10-04 | Applied Optoelectronics, Inc. | Multilayered flexible printed circuit with both radio frequency (rf) and dc transmission lines and an optical transceiver using same |
| CN108540234A (en) * | 2018-04-12 | 2018-09-14 | 中国科学院半导体研究所 | Detector integrated array structure and detector receiving module |
Non-Patent Citations (2)
| Title |
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| SHIGERU KANAZAWA等: "Low-crosstalk operation of directly modulated", 《OPTICS EXPRESS》 * |
| ZHIKE ZHANG等: "112 Gbit∕s transmitter optical subassembly based on hybrid integrated directly modulated lasers", 《CHINESE OPTICS LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284390A (en) * | 2021-12-23 | 2022-04-05 | 中国电子科技集团公司第四十四研究所 | Vertical incidence ultra-wideband integrated photoelectric detector chip and manufacturing method thereof |
| CN114284390B (en) * | 2021-12-23 | 2024-04-16 | 中国电子科技集团公司第四十四研究所 | Vertical incidence ultra-wideband integrated photoelectric detector chip and manufacturing method thereof |
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| CN110865434B (en) | 2021-01-15 |
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