CN112838468B

CN112838468B - TO packaging structure

Info

Publication number: CN112838468B
Application number: CN202110004837.3A
Authority: CN
Inventors: 和文娟; 郑庆立; 汪钦; 程鹏; 孙甫
Original assignee: Accelink Technologies Co Ltd
Current assignee: Accelink Technologies Co Ltd
Priority date: 2021-01-04
Filing date: 2021-01-04
Publication date: 2021-12-31
Anticipated expiration: 2041-01-04
Also published as: WO2022141953A1; CN112838468A

Abstract

The invention discloses a TO packaging structure, which comprises: TO base, TO ground electrode, signal terminal carrier and gold wire lead wire, wherein: the TO base is provided with the TO ground electrode and the signal wiring terminal; the signal wiring terminal carrier is arranged on the surface of the signal wiring terminal and is connected with the TO ground electrode through the gold wire lead; the structure is encapsulated in an enclosed cavity. Through the signal terminal carrier lug connection on gold wire lead wire with TO ground electrode and the signal terminal, avoid passing through the TO base, reduced the distance of signal line TO ground, whole TO packaging structure's reference ground electrode is unified, because the signal terminal carrier has the capacitive characteristic, the signal terminal carrier can act on mutually with the inductance of signal terminal, the impedance between signal terminal and the TO base has been reduced, realize better impedance matching, reduce signal reflection, signal transmission of higher frequency has been realized.

Description

TO packaging structure

Technical Field

The invention belongs TO the technical field of photoelectric communication, and particularly relates TO a TO packaging structure.

Background

At present, the technology of the TO packaging scheme which is widely applied is mature, a commonly adopted packaging structure is shown in fig. 1 and comprises a TO base 10, a TO ground electrode 20, a signal wiring post 30, a gold wire lead 50, a transmitting component and a receiving component, and because the distance between the TO base 10 and the signal wiring post 30 is large, and the signal wiring post 30 is an inductive element, the impedance between the signal wiring post 30 and the TO base 10 is high and exceeds the design impedance of 25 omega, the reflection loss of signals in the transmission process is large. The packaging structure optimizes impedance matching and reduces packaging parasitic parameters by matching and designing the circuit on the ceramic circuit board of the laser chip carrier on the TO base, but in the TO packaging design of high-speed signal transmission, the ideal design is that the single-end impedance value is 25 omega, the differential impedance value is 50 omega, and the actual production process and the raw material parameters are limited by the difference of material uniformity; precision errors caused during machining or assembly; the resistance of the connection points between the elements and the molten state of the solder are not completely uniform, and therefore the resistance value is different from the ideal design value.

In order TO improve the packaging performance, an idea is TO adopt a scheme of widening a laser chip carrier, and TO make a signal output bonding pad on the laser chip carrier close TO a signal binding post on a TO base as much as possible, so as TO shorten the length of a gold wire lead and reduce the impedance performance. However, the laser chip carrier is limited by the area of the TO base and the laser chip, and the process difficulty is high, so that mass production cannot be realized.

With the continuous improvement of communication frequency requirements, further requirements are provided for the high-frequency transmission performance of the TO packaging structure, but the electrode structure design is continuously optimized, the increase of gold wire leads is limited, and therefore a new packaging scheme is provided.

Disclosure of Invention

In view of the above defects or improvement requirements of the prior art, the present invention provides a TO package structure, which aims TO reduce the impedance between a signal terminal and a base and reduce the difference between the actual impedance value and the ideal design value, thereby solving the technical problem that the high-frequency performance of the TO package can be improved according TO the existing package platform.

TO achieve the above object, according TO an aspect of the present invention, there is provided a TO package structure, the structure including: TO base 10, TO ground electrode 20, signal post 30, signal post carrier 40 and gold wire lead 50, wherein:

the TO base 10 is provided with the TO ground electrode 20 and the signal wiring terminal 30;

the signal terminal post carrier 40 is arranged on the surface of the signal terminal post 30, and the signal terminal post carrier 40 is connected with the TO ground electrode 20 through the gold wire lead 50;

the structure is encapsulated in an enclosed cavity.

As a further improvement and complement to the above solution, the present invention also comprises the following additional technical features.

Preferably, the signal terminal post carrier 40 is attached TO the surface of the signal terminal post 30 by conductive adhesive, and after the signal terminal post carrier 40 is attached, the horizontal height of the signal terminal post carrier 40 is less than the preset value of the horizontal height of the TO ground electrode 20.

Preferably, the gold wire bonding area on the surface of the signal post carrier 40 is plated with gold.

Preferably, the signal post carrier 40 is made of alumina ceramic or aluminum nitride ceramic.

Preferably, the signal terminal post carrier 40 is a cylinder, and specifically, is one of a square cylinder, a fan-shaped cylinder or a triangular cylinder.

Preferably, the TO ground electrode 20 and the signal terminals 30 are attached TO the TO base 10 by conductive adhesives.

Preferably, the signal post 30 is divided into a first signal post 31 and a second signal post 32, and the signal post carrier 40 is also divided into a first signal post carrier 41 and a second signal post carrier 42, wherein:

the first signal post 31 and the second signal post 32 are disposed at both sides of the TO ground electrode 20;

the gold wire lead 50 is divided into a first gold wire lead 51 and a second gold wire lead 52;

the first gold wire lead 51 connects the first signal post carrier 41 and the TO ground electrode 20;

the second gold wire lead 52 connects the second signal post carrier 42 and the TO ground electrode 20;

the signal contact 30 is connected TO the TO ground electrode 20 above the TO base 10 by a first gold wire lead 51 and a second gold wire lead 52.

Preferably, there is no contact between the first gold wire lead 51 and the second gold wire lead 52; the first gold wire leads 51 are not in contact with each other; the second gold wire leads 52 are not in contact with each other.

Preferably, the number of the first gold wire leads 51 is one or more; the number of the second gold wire leads 52 is one or more.

Preferably, the gold wire lead 50 has a diameter of 18 μm, 20 μm or 25 μm.

Generally, compared with the prior art, the technical scheme of the invention has the following beneficial effects:

1. through the signal terminal carrier lug connection on gold wire lead wire with TO ground electrode and the signal terminal, avoid passing through the TO base, reduced the distance of signal line TO ground, whole TO packaging structure's reference ground electrode is unified, because the signal terminal carrier has the capacitive characteristic, the signal terminal carrier can act on mutually with the inductance of signal terminal, the impedance between signal terminal and the TO base has been reduced, realize better impedance matching, reduce signal reflection, signal transmission of higher frequency has been realized.

2. Compared with the existing structure, the TO packaging structure only increases a carrier in the whole material cost, and the increase of the material cost is limited;

3. when the TO packaging structure is used for packaging, the total TO structure is unchanged, the TO packaging structure and a conventional device share materials and a production line, the process transformation is not needed, and the TO packaging structure is compatible with a conventional module structure.

Drawings

FIG. 1 is a schematic diagram of a conventional TO package structure;

fig. 2 is a schematic view of a TO package structure in the first embodiment;

FIG. 3 is a graph of impedance simulation effect of a conventional TO package structure;

FIG. 4 is a diagram of the simulation effect of the impedance of the TO package structure in the first embodiment;

FIG. 5 is a graph of insertion loss simulation effect of a conventional TO package structure;

fig. 6 is a diagram illustrating simulation effects of the return loss of the TO package structure in the first embodiment;

FIG. 7 is a graph of insertion loss simulation effect for a conventional TO package structure;

fig. 8 is a diagram illustrating the simulation effect of the return loss of the TO package structure in the first embodiment;

FIG. 9 is an equivalent circuit model of a conventional TO package structure;

fig. 10 is an equivalent circuit model of the TO package structure in the first embodiment.

The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:

a 10-TO base; 20-TO ground electrode; 30-a signal terminal post; 31-a first signal post; 32-a second signal post; 40-signal terminal post carrier; 41-a first signal post carrier; 42-a second signal post carrier; 50-gold wire lead; 51-a first gold wire lead; 52-second gold wire lead; 60-a transmitting assembly; 61-laser chip carrier; 62-laser chip; 70-a receiving component; 71-detector heat sink; 72-a detector chip; 80-connecting column.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.

In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The first embodiment is as follows:

in order TO reduce the difference between the actual impedance value and the ideal design value between the signal terminal 30 and the TO base 10, the first embodiment provides a TO package structure, as shown in fig. 2, where the structure includes: TO base 10, TO ground electrode 20, signal post 30, signal post carrier 40 and gold wire lead 50, wherein:

the structure is encapsulated in an enclosed cavity.

As shown in fig. 2, the TO package structure in the first embodiment further includes: emitting component 60, receiving component 70 and spliced pole 80, emitting component 60 includes laser chip carrier 61 and laser chip 62, and receiving component 70 includes detector heat sink 71 and detector chip 72, wherein:

the TO base 10 is provided with a detector heat sink 71 and a connecting column 80 besides the TO ground electrode 20 and the signal connecting column 30;

the laser chip carrier 61 is adhered TO the TO ground electrode 20 through a conductive adhesive, and the laser chip 62 is arranged on the surface of the laser chip carrier 61;

the laser chip carrier 61 is connected with the signal wiring terminal 30 through a gold wire lead;

the detector heat sink 71 is connected with the connecting column 80 through a gold wire lead;

the detector chip 72 is arranged on the surface of the detector heat sink 71, and the detector chip 72 is connected with the TO base 10 through a gold wire lead;

the entire structure is enclosed in a closed cavity.

The TO package structure in the first embodiment is applied TO a coaxial package device, as shown in fig. 2, a detector heat sink 71 is pasted on a TO base 10, a detector chip 72 is pasted on the detector heat sink 71, then a first signal terminal carrier 41 and a second signal terminal carrier 42 included in a signal terminal carrier 40 are respectively pasted on a first signal terminal 31 and a second signal terminal 32, a gold wire lead is respectively punched from a TO ground electrode 20 connected with a laser chip carrier 61 TO two sides TO form a first gold wire lead 51 and a second gold wire lead 52, the first gold wire lead 51 is connected with the first signal terminal carrier 41 and the TO ground electrode 20, the second gold wire lead 52 is connected with the second signal terminal carrier 42 and the TO ground electrode 20, the gold wire lead 50 is fixed by using gold-tin solder or directly fixed, the laser chip 62 is eutectic-welded and fixed on the laser chip carrier 61, finally, the gold wire lead 50 connects the positive electrode and the negative electrode of the detector chip 72 TO the binding posts on the two sides respectively by connecting the signal binding post carrier 40 and the TO ground electrode 20, so that the chip of the detector chip 72 is powered up.

As can be seen from comparison between fig. 1 and fig. 2, since the signal connection post 30 has a first gold wire lead 51 and a second gold wire lead 52 connected TO the TO ground electrode 20, respectively, a new capacitor structure is formed, the signal transmission connection between the two signal connection posts 30 and the TO ground electrode 20 is shortened, and the whole TO structure is unified with the ground reference electrode. Finally, the TO package structure in the first embodiment is subjected TO conventional device-level packaging, and after being packaged into a device, the TO package structure can be applied TO SFP, SFP + and other series modules.

In the first embodiment, the first signal connection post 31 and the second signal connection post 32 are respectively provided with three gold wire leads directly connected with the laser chip carrier 61, the laser chip carrier 61 is connected with the anode of the laser chip 62 through one gold wire lead, the detector heat sink 71 is connected with the connection column 80 through one gold wire lead, and the detector chip 72 is connected with the TO base 10 through one gold wire lead. Since the pad area of the laser chip 62 is limited and has a diameter of about 75 μm, at most one gold wire lead 50 is punched on the laser chip 62. Three gold wire leads 50 and signal terminals 30 are connected to both sides of the laser chip carrier 61, respectively, but it should be noted that the larger the number of gold wire leads 50, the faster the heat conduction

In this embodiment, the parasitic inductance of the gold wire in the TO package structure is large, which directly affects the TO package structure TO transmit high frequency signals.

The parasitic inductance of gold wire is denoted by L and can be estimated by the following equation:

in the formula, mu₀Is the magnetic permeability of vacuum, mu₁Is the relative permeability,. l₁Is the length of the gold wire, d₁Is the gold wire diameter and δ represents the skin depth.

Therefore, when the length of the gold wire is shortened and the diameter of the gold wire is increased, the parasitic inductance of the gold wire is also reduced.

As shown in fig. 9, the circuit structure is identical TO that of fig. 1, L1 and C1 represent the TO submount 10 at the same time, and L2 and C2 represent the laser chip 72 and the TO ground electrode 20. During the laser signal, the receiving component 70 is inactive.

As shown in fig. 10, the circuit structure is identical to that of fig. 2, and the extra capacitor C3 represents the gold wire lead 50 and the signal post carrier 40. The resistance value of the entire circuit decreases due to the addition of the capacitor C3.

As can be seen from fig. 9 TO 10, the inductive characteristics of the circuit of fig. 9 are more obvious, and by adding the signal post carriers 40 on the signal posts 30 and by optimizing the addition of a gold wire lead 50 between each signal post carrier 40 and the TO ground electrode 20, which is equal TO the addition of the capacitor C3 on the circuit, the capacitive characteristics of the signal post carriers 40 and the inductance of the signal posts 30 are in interaction, the impedance between the signal posts 30 and the TO base 10 is reduced, and better impedance matching is realized.

In order TO shorten the length of the gold wire lead 50 between the upper surface of the signal terminal carrier 40 and the TO ground electrode 20 on the TO base 10 as much as possible, in combination with the embodiment of the present invention, there is also a preferred implementation scheme, specifically, as shown in fig. 2, the signal terminal carrier 40 is adhered TO the surface of the signal terminal 30 by a conductive adhesive, and after the adhesion, the horizontal height of the signal terminal carrier 40 is smaller than the preset value of the horizontal height of the TO ground electrode 20. The level of the signal terminal post carrier 40 is as close TO that of the TO ground electrode 20 as possible, and the smaller the preset value is, the shorter the length of the gold wire lead 50 is, the smaller the parasitic inductance value of the gold wire is, and the better the TO package structure transmits a high frequency signal.

In the first embodiment, the first signal terminal 31 and the second signal terminal 32 are respectively located at the left and right sides of the TO ground electrode 20, the first signal terminal carrier 41 and the second signal terminal carrier 42 are located above the first signal terminal 31 and the second signal terminal 32, the closer the horizontal height of the first signal terminal carrier 41 and the second signal terminal carrier 42 is TO the TO ground electrode 20, the shorter the length of the gold wire lead 50 between the upper surface of the signal terminal carrier 40 and the TO ground electrode 20 is, and the higher the transmission signal frequency of the TO package structure is.

In order not to affect the function of the signal post 30 for transmitting electrical signals, there is a preferred implementation scheme in combination with the embodiment of the present invention, specifically, as shown in fig. 2, the gold wire bonding area on the surface of the signal post carrier 40 is plated with gold layer. Since the signal terminals 30 need to power the detector chip 72 and need to have a conductive function, after the signal terminal carrier 40 is added, the gold wire leads 50 on the surface of the signal terminal carrier 40 also need to be conductive and transmit electric signals, so the upper surface of the signal terminal carrier 40 must be plated with a gold layer.

In order to avoid the signal terminal post carrier 40 conducting and transmitting electrical signals and reducing the manufacturing difficulty and cost price, in combination with the embodiment of the present invention, there is also a preferred implementation scheme, specifically, as shown in fig. X, the signal terminal post carrier 40 is made of alumina ceramics or aluminum nitride ceramics. Since the signal post carrier 40 itself cannot conduct electricity nor transmit an electric signal, it is not necessary TO conduct electricity and transmit an electric signal between the signal post 30 and the TO ground electrode 20, and thus the signal post carrier 40 needs TO use an insulating material, preferably, alumina ceramic or aluminum nitride ceramic.

In order to select a suitable position for the signal post carrier 40, which may require a shape change of the signal post 30 in view of the limitation of the area of the signal post 30 and the number of gold wire leads 50, there is also a preferred implementation in combination with the embodiment of the present invention, in particular, as shown in fig. 2, the signal post carrier 40 is a cylinder, in particular, one of a square cylinder, a fan cylinder or a triangular cylinder. In the first embodiment, a square cylinder is used.

In order TO facilitate the conduction and the transmission of high-frequency signals, there is a preferred implementation scheme in combination with the embodiment of the present invention, specifically, as shown in fig. 2, the TO base 10 is attached TO the TO ground electrode 20 and the signal terminals 30 by conductive adhesives. The conductive adhesive is of the type H20E from the epoxy-tek supplier, as well as many other manufacturer-alternative models.

In order to facilitate the circuit connection and increase the transmission rate, the signal terminal 30 is divided into a first signal terminal 31 and a second signal terminal 32, and the signal terminal carrier 40 is also divided into a first signal terminal carrier 41 and a second signal terminal carrier 42, wherein:

In the first embodiment, the current between the signal terminals 30 and the TO ground electrode 20 can pass through the gold wire leads 50 in addition TO the TO base 10, so as TO improve the transmission rate.

In order TO avoid the occurrence of short-circuiting of gold wire leads on the surface of TO ground electrode 20 and short-circuiting of gold wire bonding wires on the surface of signal post carrier 40, there is also a preferred implementation in conjunction with the embodiments of the present invention, in particular, as shown in fig. 2, there is no contact between the first gold wire lead 51 and the second gold wire lead 52. The first gold wire leads 51 do not contact each other; the second gold wire leads 52 are not in contact with each other.

In order to transmit signals at a faster frequency, there is also a preferred implementation scheme in combination with the embodiment of the present invention, specifically, as shown in fig. 2, the number of the first gold wire leads 51 is one or more; the number of the second gold wire leads 52 is one or more.

In the first embodiment, the number of the first gold wire lead 51 and the second gold wire lead 52 is one, and in the case of multiple gold wire leads, the transmission rate of the whole package structure is higher, but the heat dissipation performance is reduced, and in actual use, the number of the gold wire leads 50 is selected according to specific situations.

If a plurality of gold wire leads 50 are connected between the signal terminal carrier 40 and the TO ground electrode 20, the gold wire leads 50 are connected in parallel, and the diameter of the gold wire leads 50 is increased, so that the gold wire parasitic inductance value is reduced.

In order to meet the requirements of the practical conditions, a preferred implementation scheme exists in combination with the embodiment of the present invention, specifically, as shown in fig. 2, the diameter of the gold wire lead 50 is 18 μm, 20 μm or 25 μm. The larger the diameter of the gold wire is, the lower the parasitic inductance value of the gold wire is, and the better the transmission efficiency is, in the first embodiment, the diameter of the gold wire lead 50 is 25 μm, the equivalent inductance and the resistance are 1nH and 2 Ω/mm, respectively, and in the first embodiment, the arc height of the gold wire lead 50 is not more than 200 μm. In addition, gold wire lead 50 length also needs TO take into account the size of the hermetic cavity of the TO package structure. The wire bonding scheme of the gold wire is shown in fig. 2, and the gold wire is connected by adopting a ball bonding mode, wherein the ball bonding is to burn small balls at the end part of the gold wire by using flame and then bond the small balls with a chip electrode or a gold-plated layer.

In order TO facilitate testing of data transmission effects and distinguishing of the positive electrode and the negative electrode of the TO structure, in combination with the embodiment of the present invention, there is also a preferred implementation, specifically, as shown in fig. 2, the photosensitive surface of the detector chip 72 is disposed in the center of the TO base 10. The upper surface and the lower surface of the detector chip 72 correspond TO the anode and the cathode respectively, and the upper surface of the detector chip 72 or the lower surface of the detector chip 72 directly determines the anode and the cathode of the TO structure during the TO structure packaging.

For example, fig. 3 TO 8 show that HFSS software tools are selected by simulation software for positive and negative electrode test simulation effect diagrams of a TO structure in a conventional TO structure and the TO structure in the first embodiment, and the Time Domain Reflectometry (TDR) rising edge Time is set TO 15 ps. The test selects a passive test instrument, and the test board selects a PCB circuit board with SMA. Firstly, a model needs to be established by simulation software, and the specific parameters used by the established model are as follows: the diameter of each gold wire lead 50 is 25 micrometers, the arc height is 200 micrometers, the length of each first gold wire 51 and the length of each second gold wire 52 are 2.5mm, the length of each gold wire lead between the laser chip 62 and the laser chip carrier 61 is 390 micrometers, the number of the gold wire leads connected to the laser chip carrier 61 respectively by the first signal wiring terminal carrier 41 and the second signal wiring terminal carrier 42 is three, and the length of each gold wire lead is 1.5 mm.

In fig. 3 and 4, the abscissa is the transmission rate and the ordinate is the impedance value, and m1 in fig. 3 of the conventional TO structure is 18 Ω of single-ended impedance at the same coordinate of the TO glass insulation; the m2 and m3 signal post 30 impedances are 61.2 Ω; m4 is the impedance of the positive electrode gold wire lead of 50.5 omega; m5 is the impedance of the negative pole of 36.9 omega; in fig. 4 of a TO structure of this embodiment, m1 represents that the single-ended impedance at the same coordinate of the TO glass insulation is 18 Ω; m2 and m3 represent a 48 Ω impedance of the signal post 30; m4 represents the impedance of the positive electrode gold wire lead wire to be 40 omega; m5 characterizes the negative impedance 27 Ω. The test results can be comprehensively shown by the positive circuit and the negative circuit which are tested together, the test results show that the result of fig. 4 is superior TO that of fig. 3, in fig. 4, a gold wire lead 50 is additionally arranged between each signal terminal post carrier 40 and the TO ground electrode 20, and the impedance of the signal terminal post 30 is reduced by 13.2 omega; the impedance of the positive electrode gold wire lead is reduced by 10.5 omega; the impedance of the negative electrode is reduced by 9.9 omega, the difference between the actual impedance value and the ideal design value is obviously reduced, and the effect is obvious.

In fig. 5 and 6, with transmission rate on the abscissa and insertion loss on the ordinate, m1 in fig. 5 of the conventional TO structure characterizes the negative 3dB bandwidth 14 Ghz; m2 represents the positive electrode 3dB bandwidth 20.2 Ghz; in fig. 6 of a TO structure of this embodiment, m1 represents a negative 3dB bandwidth of 19 Ghz; m2 characterizes the positive 3dB bandwidth 21 Ghz. The test results can be comprehensively shown by the fact that the positive circuit and the negative circuit are tested together, the test results show that the result of the graph 6 is better than that of the graph 5, and when the insertion loss value is 3dB, the bandwidth result in the graph 6 is higher than that in the graph 5, and the faster signal response speed of the TO structure is proved.

In fig. 7 and 8, the abscissa is the velocity and the ordinate is the return loss value, which represents the reflection value of the signal, and in the figures, m1 and m2 represent the reflection value of the signal at the frequency of 5G; m3 and m4 characterize the reflection at 10G. From the test results, the results of fig. 8 are better than those of fig. 7, and when the return loss values are 5G or 10G, the return loss values of m1, m2, m3 and m4 in fig. 8 are all reduced, and the reflection value of the signal is reduced.

From the results of fig. 3 TO 8, it can be proved that, by adding the signal terminal post carriers 40 on the signal terminal posts 30 and adding a gold wire lead 50 between each signal terminal post carrier 40 and the TO ground electrode 20, the difference between the actual impedance value and the ideal design value is significantly reduced, the impedance between the signal terminal post 30 and the TO base 10 is reduced, better impedance matching is realized, the bandwidth value is increased, the signal return loss value is reduced, the reflection of signal transmission on a link is reduced, and better signal transmission is realized.

It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims

1. A TO package structure, the structure comprising: TO base (10), TO ground electrode (20), signal terminal post (30), signal terminal post carrier (40) and gold wire lead (50), wherein:

the TO base (10) is provided with the TO ground electrode (20) and the signal wiring terminal (30);

the signal wiring terminal carrier (40) is arranged on the surface of the signal wiring terminal (30), and the signal wiring terminal carrier (40) is connected with the TO ground electrode (20) through the gold wire lead (50);

a gold wire bonding area on the surface of the signal terminal carrier (40) is plated with a gold layer, and the signal terminal carrier (40) is made of alumina ceramic or aluminum nitride ceramic;

the structure is encapsulated in an enclosed cavity.

2. The TO package structure according TO claim 1, wherein the signal post carrier (40) is attached TO a surface of the signal post (30) by a conductive paste, and after the attachment, a horizontal height of the signal post carrier (40) is less than a preset value of a horizontal height of the TO ground electrode (20).

3. The TO package structure of claim 1, wherein the signal terminal carrier (40) is a cylinder, in particular one of a square cylinder, a fan-shaped cylinder or a triangular cylinder.

4. The TO package structure according TO claim 1, wherein the TO base (10) is attached with the TO ground electrode (20) and the signal post (30) by a conductive adhesive.

5. The TO package structure of any one of claims 1 TO 4, wherein said signal post (30) is divided into a first signal post (31) and a second signal post (32), and said signal post carrier (40) is also divided into a first signal post carrier (41) and a second signal post carrier (42), wherein:

the first signal terminal (31) and the second signal terminal (32) are disposed at both sides of the TO ground electrode (20);

the gold wire lead (50) is divided into a first gold wire lead (51) and a second gold wire lead (52);

the first gold wire lead (51) connects the first signal post carrier (41) and the TO ground electrode (20);

the second gold wire lead (52) connects the second signal post carrier (42) and the TO ground electrode (20);

the signal terminals (30) are connected TO the TO ground electrode (20) above the TO base (10) by first gold wire leads (51) and second gold wire leads (52).

6. The TO package structure of claim 5, wherein said first gold wire lead (51) and said second gold wire lead (52) are free of contact therebetween; the first gold wire leads (51) are not contacted with each other; the second gold wire leads (52) are not in contact with each other.

7. The TO package structure of claim 6, wherein the number of the first gold wire leads (51) is one or more; the number of the second gold wire leads (52) is one or more.

8. The TO package structure of claim 5, wherein the gold wire leads (50) have a diameter of 18 μ ι η, 20 μ ι η, or 25 μ ι η.