CN214798175U - Coaxial packaged 25G high-speed laser - Google Patents
Coaxial packaged 25G high-speed laser Download PDFInfo
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- CN214798175U CN214798175U CN202121219218.8U CN202121219218U CN214798175U CN 214798175 U CN214798175 U CN 214798175U CN 202121219218 U CN202121219218 U CN 202121219218U CN 214798175 U CN214798175 U CN 214798175U
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Abstract
The utility model provides a coaxial packaged 25G high-speed laser, including TO56 tube socket, TO56 cap, detector chip in a poor light, heat sink block and 25G DFB laser chip, the heat sink block is fixed on the ground pin of TO56 tube socket, is equipped with first metallization layer and the second metallization layer of mutual insulation on the heat sink block; the 25G DFB laser chip is fixed on the heat sinking block, the positive pole of the 25G DFB laser chip is led out to the first metal coating through a lead, and the negative pole of the 25G DFB laser chip is electrically connected with the second metal coating; the first metal-plated layer is electrically connected with a first pin of the TO56 tube socket through a plurality of parallel bonding alloy wires, and the second metal-plated layer is electrically connected with a second pin of the TO56 tube socket through a plurality of parallel bonding alloy wires. The utility model provides a 25G high-speed laser, stability is higher, has improved impedance match and high frequency response's problem.
Description
Technical Field
The utility model relates to an optical chip seals the survey field, especially relates to a high-speed laser instrument of 25G of coaxial encapsulation.
Background
The era vision brought by the development of 5G networks is the interconnection of everything, and the method is characterized by high capacity, high speed and low time delay; the network architecture includes three domains, access, control and forwarding. Close to the end user is the Radio Access Network (RAN), which is dominated by 25 Gbps. The interconnection of everything in the 5G network requires a huge data center and macro base stations and micro base stations for support, and the number of the data centers is usually 4-6 times that of the 4G network, so that a large number of optical fibers are required. The problem can be well solved by adopting a coarse wavelength division multiplexing technology applied to a 25G CWDM optical module of 5G forward transmission. And the 25G CWDM optical module adopts coarse wavelength division multiplexing, so that compared with the traditional low-speed optical module, the TEC is not needed, the product cost is controlled, and higher transmission efficiency is obtained.
The 25G DFB laser as a core component in the 25G CWDM optical module has the characteristics of low threshold, high bandwidth, high output optical power and high transmission efficiency. However, when the 25G DFB laser is packaged, parasitic inductance is introduced by gold wires and caps due TO high-frequency modulation, which causes problems of impedance and high-frequency response, affects the circuit, and thus reduces the performance of the TO device.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a coaxial encapsulation's 25G high-speed laser.
The utility model provides a high-speed laser instrument of 25G of coaxial encapsulation, including TO56 tube socket, the TO56 cap, the detector chip in a poor light, heat sink and 25G DFB laser instrument chip of cover in TO56 tube socket top, wherein: the backlight detector chip is fixed in the center of the TO56 tube socket, the heat sink block is fixed on the grounding pin of the TO56 tube socket, and a first metal plating layer and a second metal plating layer which are mutually insulated are arranged on the heat sink block; the 25G DFB laser chip is fixed on the heat sinking block and is positioned right above the backlight detector chip, the anode of the 25G DFB laser chip is led out to the first metal coating layer through a lead, and the cathode of the 25G DFB laser chip is electrically connected with the second metal coating layer; the first metal-plated layer is electrically connected with a first pin of the TO56 tube socket through a plurality of parallel bonding alloy wires, and the second metal-plated layer is electrically connected with a second pin of the TO56 tube socket through a plurality of parallel bonding alloy wires.
Furthermore, the 25G high-speed laser also comprises a ceramic cushion block, the ceramic cushion block is fixedly arranged in the center of the TO56 tube seat, and the backlight detector chip is fixedly arranged on the ceramic cushion block.
Furthermore, a third metal plating layer is arranged on the ceramic cushion block, the negative electrode of the backlight detector is electrically connected with the third metal plating layer, and the third metal plating layer is electrically connected with a third pin of the TO56 tube seat through a bonding alloy wire.
Furthermore, the ceramic cushion block is fixedly attached TO the TO56 tube seat through conductive silver adhesive, and the backlight detector chip is fixedly attached TO the ceramic cushion block through conductive silver adhesive.
Furthermore, the first metal plating layer and the second metal plating layer are arranged on one surface of the heat sink block close to the 25GDFB laser chip at intervals; one surface of the 25G DFB laser chip close to the heat sinking block is a negative electrode of the 25G DFB laser chip, and the negative electrode of the 25G DFB laser chip is welded with the second metal plating layer of the heat sinking block through a gold-tin eutectic substance.
Furthermore, a lens is arranged on the TO56 tube cap, the lens is positioned right above the 25G DFB laser chip, and the center of the lens is coaxially aligned with the light outlet of the 25G DFB laser chip.
Further, the TO56 pipe cap is welded on the TO56 pipe base.
Further, the heat sink block is welded TO the upper surface of the grounding pin of the TO56 tube seat through gold-tin eutectic, and the 25GDFB laser chip is welded TO the heat sink block through gold-tin eutectic.
The utility model provides a coaxial encapsulation's 25G high-speed laser has following beneficial effect at least: the heat sink block is provided with a first metal plating layer and a second metal plating layer which are insulated from each other, the anode of the 25G DFB laser chip is connected with a first pin of the TO56 tube seat through the first metal plating layer on the heat sink block, the cathode of the 25G DFB laser chip is connected with a second pin of the TO56 tube seat through the second metal plating layer on the heat sink block, meanwhile, a plurality of bonding gold wires which are connected in parallel are adopted between the first metal plating layer and the first pin, the second metal plating layer and the second pin are connected, parasitic inductance is reduced, the problems of impedance matching and high-frequency response of the coaxially packaged 25G high-speed laser are solved, the stability of the coaxially packaged 25G DFB laser chip is improved, and the use performance and quality requirements of the 25G DFB laser chip are met.
Drawings
For a clearer explanation of the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic diagram of an internal structure of a 25G high-speed laser according to an embodiment of the present invention;
fig. 2 is a top view of the internal structure of a 25G high-speed laser according to an embodiment of the present invention;
fig. 3 is a flowchart of a method for manufacturing a coaxial packaged 25G high-speed laser according to an embodiment of the present invention;
1-TO56 tube seat, 2-ceramic cushion block, 3-backlight detector chip, 4-heat sinking block, 5-25G DFB laser chip, 101-grounding pin, 104-first pin, 103-second pin, 102-third pin, 401-first metal plating layer, 402-second metal plating layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the present application, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
In an embodiment of the present invention, as shown in fig. 1 and fig. 2, the coaxial packaged 25G high-speed laser includes a TO56 tube socket 1, a TO56 cap (not shown in the figure) covering the TO56 tube socket 1, a backlight detector chip 3, a heat sink block 4, and a 25G DFB laser chip 5, wherein: the backlight detector chip 3 is fixed at the center of the TO56 tube socket 1, the heat sink block 4 is fixed on the grounding pin 101 of the TO56 tube socket 1, and the heat sink block 4 is provided with a first metal plating layer 401 and a second metal plating layer 402 which are mutually insulated; the 25G DFB laser chip 5 is fixed on the heat sinking block and is positioned right above the backlight detector chip 3, the positive electrode of the 25G DFB laser chip 5 is led out to the first metal plating layer 401 through a lead (specifically, a gold wire can be used), and the negative electrode of the 25G DFB laser chip 5 is electrically connected with the second metal plating layer 402; the first plated metal layer 401 is electrically connected with the first pin 104 of the TO56 socket 1 through a plurality of parallel gold bonding wires, and the second plated metal layer 402 is electrically connected with the second pin 103 of the TO56 socket 1 through a plurality of parallel gold bonding wires. The number of the gold bonding wires between the first plated metal layer 401 and the first pins 104, and the number of the gold bonding wires between the second plated metal layer 402 and the second pins 103 may be set by a technician according to actual needs, which is not limited in the present invention.
Specifically, the first metal plating layer and the second metal plating layer on the heat sink block 4 may be disposed on one surface of the heat sink block 4 at intervals, the first metal plating layer is disposed on the right side, the second metal plating layer is disposed on the left side, and the middle portions are spaced apart from each other, so as to achieve insulation of the first metal plating layer and the second metal plating layer. Or the first metal plating layer on the heat sinking block 4 is arranged on the second metal plating layer to cover part of the second metal plating layer, and an insulating material is arranged between the first metal plating layer and the second metal plating layer to insulate the first metal plating layer and the second metal plating layer. The utility model discloses do not do the restriction to the mode of setting up of first metallization layer, second metallization layer, technical personnel in the field can set for by oneself as required.
More specifically, in the present embodiment, the 25G DFB laser chip is an LD chip (laser diode chip), and the backlight detector chip is a PD chip (photodiode chip).
In the coaxially packaged 25G high-speed laser provided in this embodiment, the heat sink block is provided with the first metal plating layer and the second metal plating layer which are insulated from each other, the anode of the 25G DFB laser chip is led out to the first metal plating layer through the lead, and then the first metal plating layer is connected with the first pin through the plurality of parallel bonding alloy wires, so that the problem of limited pad space of the 25G DFB laser chip is solved.
In another embodiment of the present invention, the 25G high-speed laser further includes a ceramic spacer 2, the ceramic spacer 2 is fixedly disposed in the center of the TO56 tube socket 1, and the backlight detector chip 3 is fixedly disposed on the ceramic spacer 2. Furthermore, a third metal-plated layer (not shown in the figure) is arranged on the ceramic cushion block 2, the negative electrode of the backlight detector chip 3 is electrically connected with the third metal-plated layer, and the third metal-plated layer is electrically connected with the third pin 102 of the TO56 tube seat through a bonding alloy wire. Further, the positive electrode of the backlight detector chip 3 is electrically connected TO the ground pin 1 of the TO56 stem 1.
In another embodiment of the present invention, the ceramic spacer 2 is fixed TO the TO56 tube socket 1 by conductive silver paste, and the backlight detector chip 3 is fixed TO the ceramic spacer 2 by conductive silver paste. Specifically, the ceramic cushion block 2 is attached TO the TO56 tube seat 1 through conductive silver paste, the backlight detector chip 3 is attached TO the ceramic cushion block 2, and the bonding fixation is realized through curing at a proper temperature. The conductive silver adhesive has simple process and easy operation, can improve the production efficiency, and simultaneously, is stuck and fixed by the conductive silver adhesive, thereby avoiding the material deformation, the heat damage of electronic devices and the formation of internal stress caused by high temperature when welding.
In another embodiment of the present invention, the first metal plating layer 401 and the second metal plating layer 402 are disposed on one side of the heat sink block 4 near the 25G DFB laser chip 5; one surface of the 25G DFB laser chip 5 close to the heat sink block 4 is a negative electrode of the 25G DFB laser chip 5, and the negative electrode of the 25G DFB laser chip 5 is welded with the second metal coating 402 of the heat sink block 4 through a gold-tin eutectic. The gold-tin (Au/Sn) eutectic solder is a hard solder alloy and has the advantages of high stability, high melting point, strong corrosion resistance, good wettability, high heat conductivity coefficient, high surface tension and the like. If the process gas is adopted in the process, no soldering flux is needed, and the risk of pollution in the chip bonding process is reduced.
In another embodiment of the present invention, a lens is disposed on the TO56 cap, the lens is located directly above the 25G DFB laser chip 5, and the center of the lens is coaxially aligned with the light outlet of the 25G DFB laser chip 5.
In another embodiment of the present invention, the TO56 cap is welded on the TO56 tube socket 1, so that the inner structure of the tube socket is isolated from the external environment, and the air tightness requirement is met.
In another embodiment of the present invention, the heat sink block 4 is soldered TO the upper surface of the ground pin of the TO56 stem 1 through a au-sn eutectic, and the 25G DFB laser chip 5 is soldered TO the heat sink block 4 through a au-sn eutectic.
The utility model discloses the eutectic material that uses is the gold tin alloy, and its butt fusion temperature adopts eutectic welded mode between 270 degrees to 320 degrees, not only can make on 25G DFB laser instrument chip 5 very firm is fixed in heat sinking piece 4, can guarantee in addition that 25G DFB laser instrument chip 5 is very accurate in ideal fixed position.
As shown in fig. 3, the present invention provides a method for manufacturing a coaxial packaged 25G high-speed laser, which comprises the following steps:
step S301: a ceramic cushion block is fixed at the center of a TO56 tube seat, and a backlight detector chip is fixed on the ceramic cushion block.
Specifically, the ceramic cushion block is attached and fixed TO the center of the TO56 tube seat through conductive silver adhesive, and the backlight detector chip is attached and fixed TO the ceramic cushion block through the conductive silver adhesive. More specifically, one side of the ceramic cushion block, which is attached to the backlight detector chip, is provided with a third metal plating layer, and the negative electrode of the backlight detector chip is attached to the third metal plating layer through conductive silver adhesive.
Step S302: the heat sink block is fixed on the grounding pin of the TO56 tube socket.
Specifically, the heat sink block is a heat sink block having a first metal plating layer and a second metal plating layer on the surfaces thereof, which are insulated from each other, and the first metal plating layer is insulated from the second metal plating layer.
More specifically, in the step, a eutectic gold-tin solder paste process is adopted TO solder the heat sink block with the grounding pin of the TO56 tube socket.
Step S303: and fixing the 25G DFB laser chip on a heat sinking block, positioning the 25G DFB laser chip right above the backlight detector chip, leading the positive electrode of the 25G DFB laser chip out to the first metal plating layer through a lead, and welding the negative electrode of the 25G DFB laser chip and the second metal plating layer through a gold-tin eutectic.
Specifically, a eutectic gold-tin solder pasting process is adopted TO weld the 25G DFB laser chip and the heat sink block, so that the light emitting strip of the 25G DFB laser chip is aligned with the central shaft of the TO56 tube seat.
More specifically, the light emitting bar of the 25G DFB laser chip is aligned with the central axis of the TO56 tube holder, so that the light outlet of the 25G DFB laser chip is aligned with the central axis of the TO56 tube holder.
Step S304: and connecting the first metal plating layer and the first pin of the TO56 tube seat through a plurality of parallel gold bonding wires by gold wire bonding equipment, and connecting the second metal plating layer and the second pin of the TO56 tube seat through a plurality of parallel gold bonding wires.
Further, the step also includes electrically connecting the third metal plating layer and the third pin of the TO56 tube socket through gold wire bonding equipment, and electrically connecting the anode of the backlight detector chip and the grounding pin of the TO56 tube socket.
Step S305: the TO56 tube cap was welded TO the TO56 tube holder by a capping machine so that the center of the lens of the TO56 tube cap was coaxially aligned with the light exit of the 25G DFB laser chip.
According to the coaxially packaged 25G high-speed laser manufactured by the manufacturing method provided by the embodiment, because the plurality of bonding gold wires connected in parallel are used for connecting the first metal plating layer and the first pin, and the second metal plating layer and the second pin, parasitic inductance is effectively reduced, so that the problems of impedance matching and high-frequency response of the coaxially packaged 25G high-speed laser are solved, and the stability of the coaxially packaged 25G high-speed laser is improved.
The terms and expressions used in the specification of the present invention are used for illustration only and are not meant to be limiting. It will be appreciated by those skilled in the art that changes could be made to the details of the above-described embodiments without departing from the underlying principles thereof. The scope of the invention is, therefore, to be determined only by the following claims, in which all terms are to be interpreted in their broadest reasonable sense unless otherwise indicated.
Claims (8)
1. A coaxially packaged 25G high speed laser comprising a TO56 stem, a TO56 cap covering the TO56 stem, a backlight detector chip, a heat sink block and a 25G DFB laser chip, wherein:
the backlight detector chip is fixed in the center of the TO56 tube socket, the heat sink block is fixed on a grounding pin of the TO56 tube socket, and a first metal plating layer and a second metal plating layer which are mutually insulated are arranged on the heat sink block;
the 25G DFB laser chip is fixed on the heat sinking block and is positioned right above the backlight detector chip, the anode of the 25G DFB laser chip is led out to the first metal plating layer through a lead, and the cathode of the 25G DFB laser chip is electrically connected with the second metal plating layer;
the first metal plating layer is electrically connected with a first pin of the TO56 tube seat through a plurality of parallel bonding alloy wires, and the second metal plating layer is electrically connected with a second pin of the TO56 tube seat through a plurality of parallel bonding alloy wires.
2. The packaged 25G high-speed laser of claim 1, further comprising a ceramic spacer fixedly disposed in the center of the TO56 stem, the backlight detector chip being fixedly disposed on the ceramic spacer.
3. The coaxially packaged 25G high-speed laser device as claimed in claim 2, wherein the ceramic spacer is bonded and fixed TO the TO56 tube socket by conductive silver paste, and the backlight detector chip is bonded and fixed TO the ceramic spacer by conductive silver paste.
4. The coaxially packaged 25G high-speed laser device as claimed in claim 2, wherein a third metal plated layer is disposed on the ceramic pad, the negative electrode of the backlight detector chip is electrically connected TO the third metal plated layer, and the third metal plated layer is electrically connected TO the third pin of the TO56 socket through a bonding alloy wire.
5. The coaxially packaged 25G high speed laser according to claim 1,
the first metal plating layer and the second metal plating layer are arranged on one surface, close to the 25G DFB laser chip, of the heat sink block;
one surface of the 25G DFB laser chip close to the heat sinking block is a negative electrode of the 25G DFB laser chip, and the negative electrode of the 25G DFB laser chip is welded with the second metal plating layer of the heat sinking block through a gold-tin eutectic substance.
6. The coaxially packaged 25G high speed laser as claimed in claim 1, wherein the TO56 cap has a lens located directly above the 25G DFB laser chip, the center of the lens being coaxially aligned with the light exit of the 25G DFB laser chip.
7. The packaged 25G high speed laser of claim 1, wherein the TO56 cap is soldered TO the TO56 stem.
8. The packaged 25G high speed laser of claim 1, wherein the heat sink is soldered TO the top surface of the TO56 stem ground pin by a gold-tin eutectic, and the 25G DFB laser chip is soldered TO the heat sink by a gold-tin eutectic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121219218.8U CN214798175U (en) | 2021-06-02 | 2021-06-02 | Coaxial packaged 25G high-speed laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121219218.8U CN214798175U (en) | 2021-06-02 | 2021-06-02 | Coaxial packaged 25G high-speed laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214798175U true CN214798175U (en) | 2021-11-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121219218.8U Active CN214798175U (en) | 2021-06-02 | 2021-06-02 | Coaxial packaged 25G high-speed laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214798175U (en) |
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2021
- 2021-06-02 CN CN202121219218.8U patent/CN214798175U/en active Active
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