CN206378622U - A kind of coaxial packaging optic communication device - Google Patents
A kind of coaxial packaging optic communication device Download PDFInfo
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- CN206378622U CN206378622U CN201621211462.9U CN201621211462U CN206378622U CN 206378622 U CN206378622 U CN 206378622U CN 201621211462 U CN201621211462 U CN 201621211462U CN 206378622 U CN206378622 U CN 206378622U
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- ceramic substrate
- communication device
- optic communication
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
Abstract
The utility model discloses a kind of coaxial packaging optic communication device, including base, the ceramic substrate and photoelectric chip that microstrip line is distributed with that are arranged on base；Base is axially disposed jack, and ceramic substrate is arranged in jack and is combined as a whole with base, and photoelectric chip is arranged on the microstrip line that ceramic substrate is located on the inside of base, and is electrically connected by the microstrip line on the outside of base and external system.In this way, the utility model uses the structure of coaxial packaging, significantly reduces the volume of optic communication device, reduction device cost and the difficulty with fiber coupling, while manufacturing process is simple, cost of manufacture is relatively low；The microstrip line made using ceramic substrate and on ceramic substrate, is reduced the number of times of high-frequency signal connection, the modulation of high-speed high frequency optical signal is better achieved, and can be widely applied in speed fiber optic communication systems of the speed higher than 10G.
Description
Technical field
The utility model is related to technical field of photo communication, more particularly to a kind of coaxial packaging optic communication device.
Background technology
Fiber optic communication flourishes, and 100G light communication systems are commercial in backbone network, and 10G systems stride forward access network,
16G systems are just moved forward steadily in optical-fibre channel.The high speed integrated module of optical transceiver is to complete these high speed fiber optic systems light-to-current inversions
Critical component, and the core component in these parts is light emission component and light-receiving component with standard optical interface.
Light emission component is that laser (Laser Device, LD) is accurately arranged on into the metal external member with standard fiber interface
In, light-receiving component is that photo-detector (Photodetector, PD) is accurately arranged on into the gold with standard fiber interface
Belong in external member.
At present, the light emission component and light-receiving component to speed less than 10G use the structure of coaxial packaging, for speed
The structure encapsulated more than light emission component of the rate higher than 10G and light-receiving component using butterfly.The encapsulation of high speed butterfly is using metal pottery
Porcelain rectangle shell is designed, and with good high frequency characteristics, can assemble semiconductor cooler (Thermal Electrical
Refrigerator, TEC), it is used for the high-end encapsulation of 40G light emission component and light-receiving component, but high speed butterfly is sealed
Fill with high costs, manufacture complexity, fiber coupling complicated difficult, and it only has fixed mode optical interface, it is difficult to and making can be inserted
Pull out formula optical interface.
Utility model content
The purpose of this utility model is to provide a kind of coaxial packaging optic communication device, it is intended to solves high speed butterfly-type and is packaged into
The problem of this height, making complexity, fiber coupling are complicated and are difficult to make plug type optical interface.
In order to solve the above technical problems, the utility model provides a kind of coaxial packaging optic communication device, including base, setting
In ceramic substrate and photoelectric chip that microstrip line is distributed with base；
Base is axially disposed jack, and ceramic substrate is arranged in jack and is combined as a whole with base, photoelectric chip
Ceramic substrate is installed on the microstrip line on the inside of base, and is carried out by the microstrip line on the outside of base and external system
Electrical connection.
Wherein, microstrip line is co-planar waveguide microstrip line, and co-planar waveguide microstrip line includes center conductor band and counterpoise grounding, center
Conductor band is located at the intermediate region on the main surface of ceramic substrate, and counterpoise grounding is located at the neighboring area of center conductor band and surrounds center
Conductor band, photoelectric chip is arranged on counterpoise grounding；
Low frequency lead is also distributed with the main surface of ceramic substrate, low frequency lead is located at the region of counterpoise grounding both sides respectively.
Wherein, photoelectric chip is chip of laser, and chip of laser is mounted on top of the counterpoise grounding away from base.
Wherein, chip of laser is side light emission type chip of laser, and the positive electrode of chip of laser passes through gold ball bonding
Technology is welded on center conductor band, and the negative electrode of chip of laser is welded on counterpoise grounding by eutectic welding technique.
Wherein, be connected with the sealing pipe cap with optical window on the inside of base, sealing pipe cap is provided with condenser lens, condenser lens with
The luminous zone of chip of laser is in same optical axis.
Wherein, in addition to photo detector chip, photo detector chip is loaded on a ceramic gasket, ceramic gasket welding or
It is mounted on counterpoise grounding so that the angle between the main surface of photosurface and base of light detecting chip is acute angle.
Wherein, in addition to multiple pins, multiple pins pass through base on the outside of base, and protrude from the inside of base.
Wherein, in addition to photo detector chip, photo detector chip is loaded on a ceramic gasket, ceramic gasket welding or
It is mounted on the surface on the inside of pin protrusion base, the positive and negative electrode of photo detector chip is electrically connected corresponding pin.Its
In, in addition to base radiator and semiconductor cooler；
Base radiator is arranged on base, and the chill surface of semiconductor cooler is mounted on the main surface correspondence of ceramic substrate
The back side, the radiating surface of semiconductor cooler is mounted on the surface of base radiator.
Wherein, base radiator is integrated punching press with base and is made.
Beneficial benefit：Compared with prior art, the utility model is by providing a kind of coaxial packaging optic communication device, including
Base, the ceramic substrate and photoelectric chip that microstrip line is distributed with being arranged on base；Base is axially disposed jack, pottery
Porcelain substrate is arranged in jack and is combined as a whole with base, and photoelectric chip is arranged on the micro-strip that ceramic substrate is located on the inside of base
Line, and be electrically connected by the microstrip line on the outside of base and external system.In this way, the utility model is used
The structure of coaxial packaging, significantly reduces the volume of optic communication device, reduction device cost and the difficulty with fiber coupling, makes simultaneously
Make process simple, cost of manufacture is relatively low；The microstrip line made using ceramic substrate and on ceramic substrate, is reduced high-frequency signal and connected
The number of times connect, is better achieved the modulation of high-speed high frequency optical signal, can be widely applied to the high speed optical fiber communication that speed is higher than 10G
In system.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model coaxial packaging optic communication device first embodiment；
Fig. 2 is that the base inner side in Fig. 1 connects the structural representation for sealing pipe cap；
Fig. 3 is the principle schematic of light focusing in the utility model coaxial packaging optic communication device first embodiment；
Fig. 4 is the structural representation of the utility model coaxial packaging optic communication device second embodiment；
Fig. 5 is the schematic cross-section of ceramic substrate, semiconductor cooler and base radiator in Fig. 4；
Fig. 6 is the structural representation of the embodiment of the utility model coaxial packaging optic communication device the 3rd；
Fig. 7 is the circuit of LD chips and M-PD chips in the embodiment of the utility model coaxial packaging optic communication device the 3rd
Connection diagram；
Fig. 8 is the structural representation of the embodiment of the utility model coaxial packaging optic communication device the 4th.
Embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, below in conjunction with the accompanying drawings and specifically
Embodiment is described in further detail to a kind of coaxial packaging optic communication device provided by the utility model.
As shown in figure 1, the utility model coaxial packaging photoelectric device first embodiment, including base 11, it is arranged at pipe
Ceramic substrate 13 and photoelectric chip 15 that microstrip line 14 is distributed with seat 11.
Specifically, the similar TO- bases with conventional coaxial encapsulating structure (TO-CAN) of the base 11 of present embodiment, can
Select TO-46 or TO-56 etc., but from unlike traditional TO- bases, the base 11 of present embodiment without pin, but
Jack 12 is in axial direction provided with addition on base 11, the placing ceramic substrate 13 in jack 12 wears ceramic substrate 13
It is combined as a whole in jack 12 and with base 11.
The material of base 11 is chosen as that metal can be cut down, and can cut down metal has good thermal conductivity and low thermal coefficient of expansion,
It can make optic communication device that there is good service behaviour within the scope of wide temperature；It can make that gold can be cut down using low temperature glass slurry
Category is combined together with ceramic welding, so as to realize the joined integrally of base 11 and ceramic substrate 13.
The position that ceramic substrate 13 is placed in base 11 and the angle worn are unrestricted, but for the ease of photoelectricity core
The installation and the regulation of follow-up optical axis of piece 15, it is generally vertical to wear, that is, make ceramic substrate 13 perpendicular to base 11.
Ceramic substrate 13 has the advantages that high frequency characteristics is protruded, thermal conductivity is high, heat endurance is good, is made on ceramic substrate 13
Make microstrip line 14, can make optic communication device that there is good high frequency performance and heat sinking function etc..The material of ceramic substrate 13 is optional
Aluminum oxide or aluminium nitride, wherein aluminum oxide are applied than wide, and the boat having high requirements to heat conduction and heat radiation is applied to aluminium nitride more
Empty space industry；Suitable material is selected in practical application as needed, this is not limited.
Microstrip line 14 is distributed with ceramic substrate 13, microstrip line 14 is a kind of microwave transmission line, and microwave is frequency is
300MHz~300GHz electromagnetic wave, is a kind of uhf electromagnetic wave, and optical signal is modulated to the microwave of generation high-speed high frequency
Photon signal, data are transmitted using microwave photon signal in fiber optic network, bandwidth, strong interference immunity, can be achieved it is remote,
At a high speed, the transmission of data signal, therefore can be widely applied in high speed fiber optic systems of the speed higher than 10G, to realize that high speed is same
The device architecture of axle envelope dress provides condition.
The making of microstrip line 14 is optional to be carried out using thick-film technique or thin-film technique.Present embodiment uses thin-film technique,
It is thick that its manufacturing process evaporates last layer with the method being evaporated in vacuo for first on the main surface 131 of the ceramic substrate 13 polished
The chromium for 20-40nm is spent, then it is about 1 μm gold, copper or silver etc. to evaporate thickness in layers of chrome, then applies photoresists on surface and pastes
The egative film of circuitous pattern photo, is placed under ultraviolet light and is exposed, after etching, leave the circuit diagram of photosensitive part needed for upper
Shape, i.e. microstrip line 14.
Microstrip line 14 has certain thickness, width and length, and the size of thickness, width and length is according to impedance matching
Depending on actual conditions.The microstrip line 14 and the area of ceramic substrate used 13 formed using aforesaid way is all greatly reduced, circuit
Figure more minimize with it is integrated.Microstrip line 14 is chosen as co-planar waveguide microstrip line, and co-planar waveguide microstrip line is led including center
Body band 141 and counterpoise grounding 142, center conductor band 141 are located at the intermediate region on the main surface 131 of ceramic substrate 13, counterpoise grounding 142
Positioned at the neighboring area of center conductor band 141 and surround center conductor band 141, between counterpoise grounding 142 and center conductor band 141 between
At a certain distance, so that counterpoise grounding 142 and center conductor band 141 are electrically insulated.
Low frequency lead 161/162 is also distributed with the main surface 131 of ceramic substrate 13, low frequency lead 161/162 is distinguished
Region positioned at the both sides of counterpoise grounding 142, low frequency lead 161/162 and counterpoise grounding 142 are spaced apart, make both electrically exhausted
Edge, low frequency lead 161/162 is used for device inside or low frequency signal or direct current signal between external system carry out circuit company
Connect, the circuit linkage function that whole optic communication device can be achieved merely with ceramic substrate 13 can be realized.
The ceramic substrate 13 that microstrip line 14 and low frequency lead 161/162 is distributed with is arranged on base 11, and base 11 will make pottery
13 points of porcelain substrate is two parts, and a part is located at 101 on the inside of base, and another part is located at 102 on the outside of base, on the inside of base
Photoelectric chip 15 is installed on 101 microstrip line 14, positioned on the outside of base 102 microstrip line 14 and/or low frequency lead 161/162
It is electrically connected with external system (not shown), external system is a series of devices, system or the circuit in cable system,
For transmitting telecommunication number, information is transmitted by electric current and communicated.
Photoelectric chip 15 is the chip for carrying out light transmitting or light-receiving, and light transmitting chip is chosen as LD chips, and LD chips lead to
It is often side light emission type LD chips, light-receiving chip is chosen as PD chips, and PD chips are usually side incident type high speed PD chips；
Light transmitting chip is the electric signal by obtaining external system and directly modulated, and converts the electrical signal to optical signal feeding light
In fibre web network；Light-receiving chip is that the optical signal in the fiber optic network that will be received is converted into electric signal, will using external system
In electric signal feeding cable system；
Photoelectric chip 15 is installed on the microstrip line 14 of ceramic substrate 13, installation site is usually located at connecing for microstrip line 14
Top of the area 142 away from base 11, installation can be that photoelectric chip 15 is directly welded or is mounted on counterpoise grounding 142, or
It is to realize to install by an additional carrier, carrier is welded or is mounted on counterpoise grounding 142, and photoelectric chip 15 is arranged on and carried
Correct position on body；
Photoelectric chip 15 is electrically connected with microstrip line 14, realizes the transmitting or reception of high-frequency high-speed optical signal；Simultaneously because
Ceramic substrate 13 has higher thermal conductivity, and the heat of whole device can be delivered to ceramic substrate 13 by photoelectric chip 15, makes pottery
Porcelain substrate 13 is transferred heat to be discharged on base 11, it is possible to achieve good heat sinking function.
When sending into fiber optic network or receiving the optical signal from fiber optic network optical signal, it is necessary to be carried out to optical signal
Focus on, the optical signal after focusing is conducive to carrying out reflection propagation in a fiber.As shown in Fig. 2 101 being connected with band on the inside of base
The sealing pipe cap 18 of optical window, sealing pipe cap 18 and base 11 is by together with high-temperature soldering, by the device sealing of base inner side 101
Get up, prevent light from leaking；Optical window position on sealing pipe cap 18 is installed by condenser lens 181, condenser lens 181 and sealing pipe cap
18 sealings, the optical axis of condenser lens 181 is coaxial with the light extraction optical axis of photoelectric chip 15 or photosensitive optical axis.
So that photoelectric chip 15 is LD chips 15 as an example, as shown in figure 3, the luminous zone 151 of LD chips 15 and condenser lens 181
Optical axis be coaxial, the laser that luminous zone 151 is sent is launched by condenser lens 181.
Some peripheral circuits are may also include around the optic communication device of present embodiment, photoelectric chip 15, such as in microstrip line
One 25 Ω film resistor is made on 14, or one 25 Ω resistance is installed, driving chip is preferably matched with photoelectric chip 15；
Thermistor, electric capacity or other electronic components are installed in relevant position such as on ceramic substrate 13, and auxiliary realizes automatic temperature-adjusting
Control, automated power control, the function of direct current biasing supply, are not specifically described herein.
These optic communication devices use coaxial packaging, significantly reduce the volume of optic communication device, reduce device cost, simultaneously
Manufacturing process is simple, and cost of manufacture is relatively low, and coaxial packaging can also further make plug type optical interface；Utilize ceramic base
Plate 13 efficiently disperses substantial amounts of heat inside optic communication device, the die temperature of stable photoelectric chip 15；On ceramic substrate 13
Microstrip line 14 is made, the modulation of high-speed high frequency optical signal can be realized, the high speed fibre system that speed is higher than 10G is can be widely applied to
In system, low frequency lead 161/162 is also distributed with ceramic substrate 13 in addition, low frequency and DC circuit connection are improved, without volume
Outer increase low frequency and direct current connecting interface, can further reduce the volume of optic communication device, reduce device cost.
The microstrip line of present embodiment is co-planar waveguide microstrip line, and in other embodiments, the making of microstrip line may be used also
Center conductor band is made by the intermediate region on the main surface of ceramic substrate, metallic ground is made at the corresponding back side in main surface
Layer is realized.
Referring to Fig. 4, the utility model coaxial packaging optic communication device second embodiment, with first embodiment not
It is with part, the optic communication device of present embodiment also includes base radiator 23 and semiconductor cooler 21.
Base radiator 23 protrudes from 101 setting on the inside of base, and base radiator 23 is tungsten copper or nickel material, and the base dissipates
Hot device 23 can be made in punching press together with base 11, or be welded on by solder on base 11, the shape of base radiator 23
Cube or prismatoid are chosen as, towards the surfacing of chill surface 201 and radiating surface 202.
Referring particularly to Fig. 5, semiconductor cooler 21 is arranged between base radiator 23 and ceramic substrate 13, semiconductor system
The chill surface 201 of cooler 21 is mounted or is welded on the corresponding back side 132 in main surface 131 of ceramic substrate 13, for absorbing pottery
The heat of porcelain substrate 13, the radiating surface 202 of semiconductor cooler 21 mounts or is welded in the surface of base radiator 23, for inciting somebody to action
To make not having space between two devices during heat transfer to base radiator 23, attachment or welding, be passed with the heat for realizing good
Lead the long-term reliability with device.
The heat transfer that whole optic communication device is produced is to ceramic substrate 13, and the chill surface 201 of semiconductor cooler 21 is inhaled
The heat of ceramic substrate 13 is received, radiating surface 202 is transferred to, radiating surface 202 is fitted with base radiator 23, and heat is further transmitted
To base radiator 23, discharged via base 11, realize radiating.
Photoelectric chip 15 works under high-frequency high-speed state, can produce substantial amounts of heat, can not be met in ceramic substrate 13
In the case of radiating, semiconductor cooler 21 is set up, the integral heat sink effect of device is improved, helps to stablize photoelectric chip 15
Die temperature, is advantageously implemented device reliability during high-speed optical signal transmission.
Referring to Fig. 6, the embodiment of the utility model coaxial packaging optic communication device the 3rd, optic communication device is launched for light
Device, photoelectric chip 305 is LD chips 305, and light emitting devices includes base 301, is arranged on base 301 micro-strip is distributed with
Ceramic substrate 303, LD chips 305 and the PD chips 307 of line 304, wherein PD chips 307 are a kind of back light detector (Monitor
Photodiode, M-PD) chip 307.
Jack 302 is in axial direction provided with base 301, placing ceramic substrate 303 makes ceramic substrate in jack 302
303 are vertically arranged in jack 302, and ceramic substrate 303 is combined as a whole with the welding of base 301 using low temperature glass slurry；
Microstrip line 304 on ceramic substrate 303 is co-planar waveguide microstrip line 304, including center conductor band 3041 and counterpoise grounding 3042, shape
Into high-frequency microwave transmission line, low frequency lead 3081/3082 is also distributed with ceramic substrate 303, low frequency, direct current connection is formed
Line.
LD chips 305 are side light emission type LD chips, by LD chips 305 directly against loaded on counterpoise grounding 3042, mount position
Install and be placed in counterpoise grounding 3042 away from the inside of base 3011 top.In counterpoise grounding 3042,3011 lower section is pacified on the inside of base
Equipped with M-PD chips 307, M-PD chips 307 are used for the laser signal for receiving the transmitting of LD chips 305, and laser signal is converted into electricity
Signal, so that the laser intensity that LD chips 305 are exported is detected, therefore the photosurface of M-PD chips 307 perceives LD that can maximize
The laser that chip 305 is sent is advisable；
In present embodiment, the ceramic gasket 306 of a cubic shaped is chosen, M-PD chips 307 are passed through into attachment first
Or the mode of welding is loaded on a surface of ceramic gasket 306, M-PD chips 307 will not be placed in ceramic gasket 306
Surface soldered is mounted on counterpoise grounding 3042, so that the photosurface of M-PD chips 307 and the main surface Cheng Rui of base 301
Angle, generally optional 80 ° -85 °, the main surface of base 301 described here is upper surface of the base 301 towards base inner side 3011.
LD chips 305 and M-PD chips 307 install rear, it is necessary to be electrically connected with respectively to both electrodes, real
Existing current path.Because the core of LD chips 305 and M-PD chips 307 is all the PN junction that is made up of p-type and N-type semiconductor
Tube core, it is P electrode for PN junction that its respective connection is also mostly, also referred to as positive electrode, and PN junction N electrode, also referred to as negative electrode
Connection stated；
Fig. 7 is the LD chips 305 and M-PD cores in the circuit connection diagram of LD chips 305 and M-PD chips 307, Fig. 7
The electrode of piece 307 is mutually not connected to, and the positive electrode 1 of LD chips 305 is welded on center conductor band by gold ball bonding technology
On 3041, the negative electrode 2 of LD chips 305 is welded on counterpoise grounding 3042 by eutectic welding technique.M-PD chips 307 it is positive and negative
Electrode 3/4 is respectively electrically connected on the corresponding electrode of ceramic gasket 306, and electrical connection can pass through paster or utilization gold ball bonding technology
Spun gold welding is carried out, ceramic gasket 306 is connected with the low frequency lead 161/162 on ceramic substrate 303 again.
When LD chips 305 launch laser signal, the photosurface of M-PD chips 307 perceives laser signal, and laser is believed
Number electric signal such as voltage signal or current signal are converted into, the transmitting laser intensity of LD chips 305 are then drawn, so as to root
According to needing to adjust the service behaviour of LD chips 305.
The optic communication device of present embodiment, on the outside of the base 3012 center conductor band 3041, counterpoise grounding 3042 and
Low frequency lead 3081/3082 can be used for being connected with external system (not shown), and external system is by the telecommunications in cable system
Number transmit to center conductor band 3041, laser signal is converted the electrical signal to by LD chips 305, then via center conductor band
3041 are sent in fiber optic network, and high-speed optical signal of the speed higher than 10G can be achieved and transmits；Simultaneously using the structure of coaxial packaging
LD chips 305 and M-PD chips 307 are mounted on ceramic substrate 303, volume, area are greatly reduced shared by device, made
Process is simpler, and cost is lower.
It should be noted that attachment or welding mentioned above is all Joining Technology, in some cases, both can be mutual
Change, or using other Joining Technologies in addition to above two mode, be defined so that actual demand can be met.
Referring to Fig. 8, the embodiment of the utility model coaxial packaging optic communication device the 4th, photoelectric chip 408 is LD cores
Piece 408, light emitting devices includes base 401, the ceramic substrate 406 that microstrip line 407 is distributed with being arranged on base 401, set
Multiple pins 402/403/404, LD chips 408 and the M-PD chips 409 being placed on base 401.
Jack 411 is in axial direction provided with base 401, placing ceramic substrate 406, makes ceramic base in jack 411
Plate 406 is vertically arranged in jack 411, and ceramic substrate 406 and the welding of base 401 are combined into one using low temperature glass slurry
Body；Microstrip line 407 on ceramic substrate 406 is co-planar waveguide microstrip line 407, including center conductor band 4071 and counterpoise grounding
4072, high speed light wave transmission line is formed, low frequency lead 4121/4122 is also distributed with ceramic substrate 406, low frequency is formed, straight
Flow connecting line.
The top for being located on the inside of base 4011 in counterpoise grounding 4072 is pasted with LD chips 408, the positive electrode of LD chips 408 with
Counter electrode on center conductor band 4071 is connected, and negative electrode and the counter electrode on counterpoise grounding 4072 of LD chips 408 connect
Connect, center conductor band 4071, counterpoise grounding 4072 and the low frequency lead 4121/4122 positioned on the outside of base 4012 are used for and outside system
System (not shown) is electrically connected.
It is arranged at multiple pins 402/403/404 on base 401 and passes through base 401 from the outside of base 4012, and protrudes
4011 on the inside of base, pin 402/403/404 is chosen as cylindrical metal pin, the axis side where center conductor band 4071
A pin 403 is set upwards, is protruded in pin 403 and is provided with ceramic gasket 405, ceramic gasket 405 on the inside of base on 4011 surface
It is welded on by solder on pin 403, M-PD chips 409 is mounted on the surface of ceramic gasket 405 so that M-PD chips 409
Photosurface and LD chips 408 luminous zone into 80 ° of -85 ° of acute angles, the positive and negative electrode of M-PD chips 409 passes through gold wire ball respectively
Weldering mode is welded on corresponding pin 402/404, and pin 403 can be grounded.
In present embodiment, external system passes through the microstrip line 407 and/or low frequency lead with the outside of the base 4012
4021/4022 connection, by the electric signal transmission in cable system to center conductor band 4071, by LD chips 408 by telecommunications
Number laser signal is converted into, then is sent to via center conductor band 4071 in fiber optic network, light of the speed higher than 10G can be achieved and believes
Number transmission, LD chips 408 launch laser signal when, the photosurface of M-PD chips 409 perceives laser signal, by laser signal
Electric signal such as voltage signal or current signal etc. are converted into, the transmitting laser intensity of LD chips 408 is then drawn, so as to root
According to needing to adjust the service behaviour of LD chips 408.
The ceramic substrate 406 and multiple pins of microstrip line 407 are distributed with setting for LD chips 408, M-PD chips 409
The coaxial packaging of high-speed optical signal transmission is realized on 402/403/404 base 401, is transmitted compared to traditional high-speed optical signal
For butterfly-type encapsulation, device volume reduces, and manufacture craft is simple, can reduce production cost.
The LD chips 408 of present embodiment are mounted on counterpoise grounding 4072, but in some low speed laser signal transmissions
LD chips 408, can also be connected on corresponding pin 402/403/404 so that the coaxial packaging knot of present embodiment by occasion
Structure has the function of the transmission of high-rate laser signal and low speed laser signal transmission simultaneously, with very strong practicality.
Meanwhile, the external system of present embodiment and the microstrip line 407 and/or low frequency lead positioned on the outside of base 4012
4021/4022 connection, that is to say, that ceramic substrate 406 is arranged in jack 411, protrudes 4012 on the outside of base, but at it
In his embodiment, ceramic substrate wear with jack, can only retain base on the inside of part, external system can with positioned at base
Multiple pins in outside are electrically connected, and are realized the function in the electric signal transmission in cable system to microstrip line, so as to save
Slightly it is located at the ceramic substrate part on the outside of base, further simplifies the coaxial packaging of optic communication device.
It should be noted that in above-described 3rd embodiment and the 4th embodiment, M-PD chips can also be gone
Remove, LD chips are replaced with side incident type high speed PD chips, high speed light-receiving is realized using side incident type high speed PD chips
The coaxial packaging of device.
Embodiment of the present utility model is the foregoing is only, the scope of the claims of the present utility model is not thereby limited, it is all
It is the equivalent structure or equivalent flow conversion made using the utility model specification and accompanying drawing content, or directly or indirectly uses
In other related technical fields, similarly it is included in scope of patent protection of the present utility model.
Claims (10)
1. a kind of coaxial packaging optic communication device, it is characterised in that including base, be arranged on the base micro-strip is distributed with
The ceramic substrate and photoelectric chip of line；
The base is axially disposed jack, and the ceramic substrate is arranged in the jack and is combined into one with the base
Body, the photoelectric chip is arranged on the microstrip line that the ceramic substrate is located on the inside of the base, and by positioned at the pipe
Microstrip line on the outside of seat is electrically connected with external system.
2. coaxial packaging optic communication device according to claim 1, it is characterised in that
The microstrip line is co-planar waveguide microstrip line, and the co-planar waveguide microstrip line includes center conductor band and counterpoise grounding, described
Center conductor band is located at the intermediate region on the main surface of the ceramic substrate, and the counterpoise grounding is located at the week of the center conductor band
Border area domain and the encirclement center conductor band, the photoelectric chip are installed on the counterpoise grounding；
Low frequency lead is also distributed with the main surface of the ceramic substrate, the low frequency lead is located at the counterpoise grounding both sides respectively
Region.
3. coaxial packaging optic communication device according to claim 2, it is characterised in that
The photoelectric chip is chip of laser, and the chip of laser is mounted on the counterpoise grounding away from the upper of the base
Side.
4. coaxial packaging optic communication device according to claim 3, it is characterised in that
The chip of laser is side light emission type chip of laser, and the positive electrode of the chip of laser passes through gold ball bonding skill
Art is welded on the center conductor band, and the negative electrode of the chip of laser is welded on the ground connection by eutectic welding technique
Take.
5. coaxial packaging optic communication device according to claim 3, it is characterised in that
The sealing pipe cap with optical window is connected with the inside of the base, the sealing pipe cap is provided with condenser lens, and the focusing is saturating
The luminous zone of mirror and the chip of laser is in same optical axis.
6. coaxial packaging optic communication device according to claim 3, it is characterised in that also including photo detector chip, institute
State photo detector chip to be loaded on a ceramic gasket, the ceramic gasket is welded or is mounted on the counterpoise grounding so that institute
It is acute angle to state the angle between the photosurface of light detecting chip and the main surface of the base.
7. coaxial packaging optic communication device according to claim 1, it is characterised in that also including multiple pins, described more
Individual pin passes through the base on the outside of the base, and protrudes from the inside of the base.
8. coaxial packaging optic communication device according to claim 7, it is characterised in that also including photo detector chip, institute
State photo detector chip to be loaded on a ceramic gasket, the ceramic gasket welds or is mounted on the pin and protrudes the base
On the surface of inner side, the positive and negative electrode of the photo detector chip is electrically connected the corresponding pin.
9. coaxial packaging optic communication device according to claim 1, it is characterised in that lead also including base radiator and partly
Chiller；
The base radiator is arranged on the base, and the chill surface of the semiconductor cooler is mounted on the ceramic substrate
The corresponding back side in main surface, the radiating surface of the semiconductor cooler is mounted on the surface of the base radiator.
10. coaxial packaging optic communication device according to claim 9, it is characterised in that
The base radiator is integrated punching press with the base and is made.
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| CN2016105486161 | 2016-07-12 | ||
| CN201610548616.1A CN106054327A (en) | 2016-07-12 | 2016-07-12 | Coaxial packaging light communication device |
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| CN206378622U true CN206378622U (en) | 2017-08-04 |
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| CN201610988647.9A Active CN106526763B (en) | 2016-07-12 | 2016-11-09 | A kind of coaxial packaging optic communication device |
| CN201621211462.9U Active CN206378622U (en) | 2016-07-12 | 2016-11-09 | A kind of coaxial packaging optic communication device |
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| CN201610988647.9A Active CN106526763B (en) | 2016-07-12 | 2016-11-09 | A kind of coaxial packaging optic communication device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526763A (en) * | 2016-07-12 | 2017-03-22 | 深圳大学 | Coaxial packaging optical communication device |
| CN110838879A (en) * | 2018-08-15 | 2020-02-25 | 苏州旭创科技有限公司 | Laser emitting assembly |
| WO2021057125A1 (en) * | 2019-09-26 | 2021-04-01 | 青岛海信宽带多媒体技术有限公司 | Optical module |
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| WO2018211635A1 (en) * | 2017-05-17 | 2018-11-22 | 三菱電機株式会社 | Semiconductor package |
| WO2018219318A1 (en) | 2017-06-02 | 2018-12-06 | 青岛海信宽带多媒体技术有限公司 | Coaxially packaged laser and optical module |
| CN107508141A (en) * | 2017-08-16 | 2017-12-22 | 青岛海信宽带多媒体技术有限公司 | The laser and optical module of a kind of coaxial packaging |
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| CN110335850B (en) * | 2019-04-15 | 2021-02-02 | 中国科学院半导体研究所 | Packaging structure of photoelectric chip |
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| US20110085767A1 (en) * | 2009-10-09 | 2011-04-14 | Emcore Corporation | Cooled Laser Module |
| CN201707474U (en) * | 2010-07-02 | 2011-01-12 | 深圳新飞通光电子技术有限公司 | Coaxial light emission tube core with cooling function |
| TWI451144B (en) * | 2011-10-03 | 2014-09-01 | Nat Kaohsiung University Ofapplied Sciences | A high-frequency coaxial transmitter optical sub-assembly |
| CN203415815U (en) * | 2013-07-16 | 2014-01-29 | 青岛海信宽带多媒体技术有限公司 | Coaxial packaged refrigeration type laser tube core |
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- 2016-07-12 CN CN201610548616.1A patent/CN106054327A/en active Pending
- 2016-11-09 CN CN201610988647.9A patent/CN106526763B/en active Active
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526763A (en) * | 2016-07-12 | 2017-03-22 | 深圳大学 | Coaxial packaging optical communication device |
| CN106526763B (en) * | 2016-07-12 | 2019-06-18 | 深圳大学 | A kind of coaxial packaging optic communication device |
| CN110838879A (en) * | 2018-08-15 | 2020-02-25 | 苏州旭创科技有限公司 | Laser emitting assembly |
| CN110838879B (en) * | 2018-08-15 | 2023-02-28 | 苏州旭创科技有限公司 | Laser emitting assembly |
| WO2021057125A1 (en) * | 2019-09-26 | 2021-04-01 | 青岛海信宽带多媒体技术有限公司 | Optical module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106054327A (en) | 2016-10-26 |
| CN106526763B (en) | 2019-06-18 |
| CN106526763A (en) | 2017-03-22 |
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