CN213660865U - Semiconductor laser chip assembly for high-speed optical signal transmission - Google Patents

Semiconductor laser chip assembly for high-speed optical signal transmission Download PDF

Info

Publication number
CN213660865U
CN213660865U CN202022692063.1U CN202022692063U CN213660865U CN 213660865 U CN213660865 U CN 213660865U CN 202022692063 U CN202022692063 U CN 202022692063U CN 213660865 U CN213660865 U CN 213660865U
Authority
CN
China
Prior art keywords
laser chip
capacitor
resistor
optical signal
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202022692063.1U
Other languages
Chinese (zh)
Inventor
王中和
刘小红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aurun Optoelectronic Technology Suzhou Co ltd
Original Assignee
Aurun Optoelectronic Technology Suzhou Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aurun Optoelectronic Technology Suzhou Co ltd filed Critical Aurun Optoelectronic Technology Suzhou Co ltd
Priority to CN202022692063.1U priority Critical patent/CN213660865U/en
Application granted granted Critical
Publication of CN213660865U publication Critical patent/CN213660865U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

The utility model discloses a semiconductor laser chip subassembly for high-speed optical signal transmission, include: a laser chip; at least two leads for connecting external driving electrical signals; a capacitor; the back surface of the capacitor is in common with the laser chip; the front surface of the capacitor is connected with one of the leads; a resistor; the resistor is positioned between the laser chip and the capacitor; the resistor is connected with the capacitor in parallel; and a gold wire; one end of the gold wire is connected with the laser chip, and the other end of the gold wire is connected with the resistor. The utility model discloses to come from the high-speed signal of telecommunication of lead wire through the inductance and the resistance back modulation laser chip output high-speed optical signal of parallelly connected electric capacity and series connection, through selecting suitable electric capacity inductance and resistance, the utility model discloses a laser chip subassembly can increase the modulation bandwidth of laser chip to utilize low-cost and highly reliable low bandwidth laser chip to realize the transmission of high-speed optical signal.

Description

Semiconductor laser chip assembly for high-speed optical signal transmission
Technical Field
The utility model relates to a signal transmission device in communication field, concretely relates to semiconductor laser chip subassembly for high-speed optical signal transmission.
Background
With the application of technologies such as high-definition video and 5G mobile communication and the explosive increase of information due to the popularization of the internet, communication networks face an increasing bandwidth increase pressure. The conventional 10G transmission technology is not enough to meet the current bandwidth requirement, and the development of 100G/400G transmission technology has become necessary. There are many challenges faced in upgrading from a conventional 10G network to over 100G. Of these, the most important is the need to develop a low-cost and reliable single-channel 25G or higher rate semiconductor laser chip, so that multiple single channels can be combined into a multi-channel 100G or higher optical device.
To increase the modulation rate of a semiconductor laser chip, the most direct method is to increase the intrinsic resonant frequency of the laser chip and reduce the parasitic effect of the chip. The former can be realized by adjusting the structure of the active region of the laser and reducing the photon lifetime, and the latter can be realized by reducing the series resistance and parasitic capacitance of the chip. These are generally achieved by adjusting the quantum wells in the active region of the chip (e.g., the number of quantum wells, strain, etc.) and shortening the cavity length of the chip (the cavity length is generally about 150 microns). Compared with a 10G chip, the 25G chip has the advantages that the modulation bandwidth is improved, and simultaneously, due to the higher photon density, the higher strain and the more obvious thermal effect of the short-cavity chip, the reliability of the 25G chip which needs to stably work under the temperature condition of-40 ℃ to 85 ℃ is greatly challenged. Therefore, the reliability of the chip has become one of the biggest challenges in mass production of 25G chips.
In addition, the shorter cavity length also causes more problems for post-processing processes such as chip cleavage coating, etc., so the yield of chips is another bottleneck of mass production of 25G chips. In order to solve the problems of production and reliability brought by a short-cavity chip, one method is to add a section of passive waveguide at the front end of the short-cavity chip so as to increase the length of the chip and ensure a shorter photon life. The method can integrate the active region and the passive waveguide on the same chip by a material growth method. However, the method requires the growth and butt joint of different materials with great technical difficulty, and at present, few manufacturers really master the technology internationally. In addition, multiple growth of material and increased chip size also increase the cost of the chip. It would therefore be of great practical significance if existing mature, slightly lower bandwidth chips could be utilized without increasing the chip modulation bandwidth through material growth and sacrificing chip reliability.
A conventional semiconductor laser chip package is shown in fig. 1, in which a laser chip 1 is fixed on a substrate 6, and the substrate 6 is located on a heat sink base 7. If a low-speed laser chip is adopted, the anode of the chip is directly connected with a lead wire connected with an electric signal through a gold wire; if a high-speed laser chip is adopted, generally for the purpose of reducing inductance generated by packaging, particularly gold wires, the laser chip 1 is placed on a substrate 6 with a metal film on the surface, the connection between the lead 5 and the substrate 6 is realized through a plurality of gold wires 8, and the anode of the laser chip 1 is connected to the substrate 6 through another gold wire 8, as shown in fig. 1, so that the length of the gold wire can be shortened and the inductance introduced by the gold wire can be reduced.
For laser chips with operating speed of 25G and above, in order to further reduce the length of gold wires and ensure impedance matching with microwave transmission as much as possible, the leads 5 and the substrate 6 are directly connected by solder instead of gold wires, as shown in fig. 2, so that the inductance introduced by the gold wires is further reduced. Therefore, it is generally considered that the package of the existing laser chip has a negative effect on the modulation bandwidth of the laser chip, and therefore the modulation bandwidth of the laser chip itself needs to be high enough to realize the transmission of high-speed optical signals.
However, the modulation bandwidth of the existing laser chip itself is not sufficient to realize the transmission of high-speed optical signals.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a semiconductor laser chip subassembly for high-speed optical signal transmission is provided, it can improve semiconductor laser's modulation bandwidth.
In order to solve the above technical problem, the utility model discloses a technical solution for high-speed optical signal transmission's semiconductor laser chip subassembly does:
the method comprises the following steps: a laser chip; at least two leads for connecting external driving electrical signals; a capacitor; the back surface of the capacitor is in common with the laser chip; the front surface of the capacitor is connected with one of the leads; a resistor; the resistor is positioned between the laser chip and the capacitor; the capacitor is connected with the resistor in parallel; and a gold wire; one end of the gold wire is connected with the laser chip, and the other end of the gold wire is connected with the resistor.
In another embodiment, the self-inductance generated by the gold wire is between 0.01nH and 10 nH.
In another embodiment, the laser chip and the capacitor and resistor are sealed in one package.
In another embodiment, further comprising: an inductor; the inductor is connected with the resistor in series; the inductor and the resistor which are connected in series are connected with the capacitor in parallel; the inductor and the resistor which are connected in series are connected with the laser chip; the inductor and the resistor which are connected in series are positioned between the laser chip and the capacitor.
In another embodiment, the resonant frequency of the RLC circuit consisting of the inductor, the resistor and the capacitor is between 0.5 and 2 times the modulation frequency.
In another embodiment, the laser chip is sealed in a package with the inductor, capacitor and resistor.
In another embodiment, the laser chip is a multiple quantum well semiconductor laser chip.
In another embodiment, further comprising: at least two transmission lines; one end of one transmission line is connected with the first lead, and the other end of the transmission line is connected with the front surface of the capacitor; one end of the other transmission line is connected with the second lead, and the other end of the transmission line is connected with the cathode of the laser chip.
In another embodiment, the laser chip is fixed on a substrate, and the substrate is positioned on a heat sink base; the at least two transmission lines are arranged on the substrate.
In another embodiment, the inductor, the capacitor and the resistor are integrated on the same substrate.
In another embodiment, the laser chip is located on a substrate on which the inductor, the capacitor and the resistor are located; or the laser chip is positioned on a substrate different from the substrate on which the inductor, the capacitor and the resistor are positioned.
In another embodiment, the capacitance value is between 0.01pF and 1 pF; and/or the inductance value is between 0.01nH and 15 nH; and/or the resistance value is between 0 and 50 ohms.
The utility model discloses the technological effect that can reach is:
the utility model discloses a drive circuit of adjustment laser instrument chip can reduce the requirement to the modulation bandwidth of laser instrument chip itself with the modulation bandwidth of the laser instrument chip of increase low-cost and high reliable low bandwidth to can realize high-speed optical signal's transmission with low costs and conveniently.
The utility model discloses utilize a circuit based on film technology and low-bandwidth laser chip of low-cost and high reliability, can realize the promotion of laser modulation bandwidth and the transmission of high rate light signal, and need not develop the huge high bandwidth laser chip of the technical degree of difficulty, this restriction that will solve the high bandwidth laser chip shortage in the existing market.
The utility model discloses to come from the high-speed signal of telecommunication of lead wire through the inductance and the resistance back modulation laser chip output high-speed optical signal of parallelly connected electric capacity and series connection, through selecting suitable electric capacity inductance and resistance, the utility model discloses a laser chip subassembly can increase the modulation bandwidth of laser chip to utilize low-cost and highly reliable low bandwidth laser chip to realize the transmission of high-speed optical signal.
The utility model discloses a laser chip subassembly can be compatible with current semiconductor laser chip packaging technology, need not develop new packaging technology and increase chip package size in addition, can be applicable to all optical devices and optical module. Therefore the utility model discloses will guarantee large-scale production, compare with current high bandwidth laser chip simultaneously, the cost is lower, and the reliability is better.
The utility model discloses can overcome the defect of the current semiconductor laser chip of 25G and above modulation rate, can be arranged in the high rate optical transmission of 25G and above with the semiconductor laser chip of low bandwidth.
The utility model discloses can utilize the optical chip and the equipment manufacturing process of current ripe high reliability, realize 25G and above high speed signal transmission.
Drawings
It is to be understood by those skilled in the art that the following description is merely exemplary in nature and that the principles of the present invention may be applied in numerous ways to achieve many different alternative embodiments. These descriptions are only used to illustrate the general principles of the teachings of the present invention and are not meant to limit the inventive concepts disclosed herein.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the general description given above and the detailed description of the drawings given below, serve to explain the principles of the invention.
The invention will be described in further detail with reference to the following drawings and detailed description:
fig. 1 is a schematic structural diagram of a semiconductor laser chip assembly according to the prior art;
FIG. 2 is a schematic diagram of another high speed laser chip assembly of the prior art;
fig. 3 is a schematic structural diagram of embodiment 1 of the semiconductor laser chip assembly for high-speed optical signal transmission according to the present invention;
fig. 4 is a graph of the intrinsic small-signal response of example 1 of the present invention, in which the abscissa is frequency (in GHz) and the ordinate is small-signal response (in dB);
fig. 5 is a small signal response curve diagram after adding an inductance capacitance and a resistance circuit in embodiment 1 of the present invention;
fig. 6 is a small signal response curve diagram after adding different inductance capacitance and resistance circuits in embodiment 1 of the present invention;
fig. 7 is a schematic structural view of embodiment 2 of the present invention.
The reference numbers in the figures illustrate:
1 is a laser chip, 2 is an inductor,
3 is a resistor, 4 is a capacitor,
5 is a lead, 6 is a substrate,
7 is a heat sink base, 8 is a gold wire,
and 9 is a transmission line.
Detailed Description
The laser chip assembly for high-speed optical signal transmission according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments, so as to clearly understand the structural type and the operation principle thereof, but the protection scope of the present invention should not be limited thereby.
The utility model discloses a core design thought is through the combination of an additional circuit based on resistance, electric capacity and inductance and laser instrument chip to increase laser instrument chip's signal modulation bandwidth. The semiconductor laser chip generates photons through electrical injection, and the interaction process of the electrons and the photons is equivalent to a circuit consisting of an equivalent resistor, an inductor and a capacitor. However, due to the limitations of semiconductor materials and chip fabrication processes, these equivalent circuit parameters cannot be infinitely adjusted to achieve the required modulation bandwidth. The overall performance of the circuit can be properly adjusted through the additional resistor, the inductor and the capacitor, so that the modulation bandwidth of the signal is increased. Because the most demanding of the current market is 25G high-speed semiconductor laser, the present invention uses this as an example to explain how to utilize low-speed laser chip to realize high-speed 25G signal transmission, especially to improve the modulation rate of the laser at high temperature of 85 ℃. Obviously, the technical solution of the present invention is also applicable to bandwidth increase of laser chip with more than 25G, such as 50G, and even higher speed.
Based on the above utility model discloses the thought, the utility model discloses constitute a laser chip subassembly with a compensating circuit who comprises resistance, electric capacity and inductance with the laser chip, the high-speed signal of telecommunication is not the direct drive laser chip, but drives laser chip output high-speed optical signal again through compensating circuit earlier to realize the transmission of high-speed signal. The utility model is used for high-speed optical transmission's laser chip subassembly mainly includes laser chip, resistance, electric capacity and inductance and connects the lead wire of the external drive signal of telecommunication. One end of the capacitor is connected with a lead wire connected with an external driving electric signal, and is connected with the inductor and the resistor in parallel, the inductor is connected with the resistor in series and is positioned between the laser chip and the capacitor, and the laser chip is connected with the inductor and the resistor in series. Thus, the applied electrical signal will first pass through a circuit consisting of a capacitor, an inductor and a resistor before driving the laser chip. By selecting proper capacitance, inductance and resistance values, the frequency response of the whole circuit can be modulated, so that the modulation bandwidth of the whole laser chip assembly is improved.
In order to realize the above-mentioned purpose that realizes high-speed optical signal based on low rate semiconductor laser chip and be used for information transmission, the utility model discloses a following embodiment realizes.
Example 1
As shown in fig. 3, the semiconductor laser chip assembly for high-speed optical signal transmission of the present invention comprises a laser chip 1, an inductor 2, a resistor 3, a capacitor 4 and at least two leads 5 for connecting external driving electrical signals, wherein the laser chip 1 is fixedly attached to a substrate 6, and the substrate 6 is located on a heat sink base 7; at least two metal film transmission lines 9 are arranged on the substrate 6, wherein one end of one transmission line 9 is connected with a lead 5, and the other end of the transmission line 9 is connected with the front surface of the capacitor 4; one end of another transmission line 9 is connected with another lead 5, and the other end of the transmission line 9 is connected with the cathode of the laser chip 1;
the laser chip 1 is connected with one end of an inductor 2 through a gold wire 8, the other end of the inductor 2 is connected with one end of a resistor 3 in series, the other end of the resistor 3 is connected with the front side of a capacitor 4, and the back side of the capacitor 4 is grounded; the capacitor 4 is connected in parallel with the resistor 3 and the inductor 2 which are connected in series;
as a specific example, the inductor 2, the resistor 3 and the capacitor 4 may be located on another different substrate; in the embodiment, the inductor 2, the resistor 3 and the capacitor 4 are on the same substrate 6 as the laser chip 1, so as to facilitate packaging and save cost;
the inductor 2, the resistor 3 and the capacitor 4 are manufactured by a thin film process;
the inductance value of the inductor 2 is controlled by the size of the metal film;
the resistance value of the resistor 3 is controlled by selecting different metal films and sizes; as a specific embodiment, the resistor 3 may be located between the laser chip 1 and the inductor 2; in consideration of the thermal effect brought by the resistor 3, in the embodiment, the resistor 3 is located between the inductor 2 and the capacitor 4, so that the resistor 3 can be far away from the laser chip 1 to reduce the influence of the thermal effect of the resistor 3 on the laser chip 1;
the capacitor 4 is a flat-plate capacitor, and the capacitance value of the capacitor is controlled by the area and/or the thickness of the dielectric layer;
the specific values of the inductor 2, the resistor 3 and the capacitor 4 are determined by the performance of the laser chip 1 and the modulation bandwidth to be achieved; generally, the value of the inductor 2 is between 0.01nH (nanohenries) and 15nH, the value of the resistor 3 is between 0 and 50 ohms, and the value of the capacitor 4 is between 0.01 and 1pF (picofarads);
in this embodiment, the inductor 2, the resistor 3 and the capacitor 4 form an RLC circuit with a resonant frequency of about
Figure BDA0002786461240000081
Where L is the inductance of the inductor 2 and C is the capacitance of the capacitor 4; to effectively increase the modulation bandwidth of the laser chip assembly, the resonant frequency is typically between 0.5 and 2 times the desired modulation frequency (i.e., operating rate);
the following is an example to illustrate how the present invention can be used for 25Gb/s optical signal modulation;
as shown in fig. 4, the intrinsic small signal response of the laser chip 1 at 85 deg.c and 60mA (milliamp) has a 3dB bandwidth of about 13.7GHz (i.e., the abscissa value corresponding to-3 dB ordinate is about 13.7GHz), and therefore cannot satisfy the signal transmission of 25 Gb/s;
when the RLC circuit in the embodiment is added, the modulation bandwidth can be greatly improved; as shown in fig. 5, the 3dB bandwidth is increased to 15.6GHz when L is 1.63nH, C is 0.022pF, and R is 10 ohm (i.e. the abscissa value corresponding to-3 dB is about 15.6 GHz); fig. 6 shows the small signal response when L is 1.86nH, C is 0.025pF, and R is 10 ohms, and the 3dB bandwidth is increased to 18.5GHz (i.e., the abscissa value corresponding to-3 dB on the ordinate is about 18.5GHz), which is sufficient to satisfy the signal transmission requirement of 25 Gb/s.
The utility model discloses a resistance R of resistance 3 mainly used control resonance peak, makes frequency response as far as possible flat. However, the resistance of the resistor 3 should not be too large so as not to cause too much thermal influence on the performance of the laser chip 1.
Example 2
In embodiment 1, the inductor 2 is made by a thin film process, and is located on the same substrate 6 as the resistor 3 and the capacitor 4; the laser chip 1 and the inductor 2 are connected through gold wires. Since the gold wire 8 for chip connection has a diameter of only about 25 μm and generates self-induced inductance, the inductor 2 in embodiment 1 can be replaced by the gold wire 8 to form embodiment 2 shown in fig. 7;
in embodiment 2, the inductor 2, which is originally located on the same substrate 6 as the resistor 3 and the capacitor 4, is replaced by a gold wire 8 with a certain length, and the gold wire 8 not only provides the connection between the resistor 3 and the laser chip 1, but also serves as the inductor 2; compared with embodiment 1, embodiment 2 replaces inductor 2 with gold wires, which not only reduces the cost, but also changes the inductance value because the length of the gold wires can be adjusted during chip packaging, so the gold wires with different lengths can function as an adjustable inductor. Since the parameters of the laser chips 1 of different suppliers are different, the inductance value is adjusted by changing the length of the gold wire, so that the resonance characteristics can be adjusted for different laser chips greatly and conveniently to obtain the optimal modulation performance.
In the above described embodiment the laser chip 1 is located on the substrate 6 where the inductor 2, the resistor 3 and the capacitor 4 are located, but this is not essential. The laser chip 1 may be placed on another substrate heat sink and then connected to the components on the substrate 6 by gold wires. Although using a different base heat sink would increase the component size, a different base would likely reduce the effect of the temperature increase on the laser chip 1 due to the heat generated by the resistor 3.
In addition, considering that the length of the gold wire is not likely to be too long in packaging, an inductor with a small inductance value connected in series with a resistor and adjustment of the length, diameter and number of gold wires can be added in embodiment 2 as in embodiment 1 to achieve the purpose of adjustable inductance.
The substrate 6 of the present invention may be aluminum nitride, aluminum oxide, quartz or silicon-based substrate.
The utility model discloses a laser chip 1 can be multiple quantum well semiconductor laser chip.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications of the present invention fall within the scope of the claims and their equivalent technologies, the present invention is also intended to include such modifications and variations.

Claims (12)

1. A semiconductor laser chip assembly for high speed optical signal transmission, comprising:
a laser chip;
at least two leads for connecting external driving electrical signals;
a capacitor; the back surface of the capacitor is in common with the laser chip; the front surface of the capacitor is connected with one of the leads;
a resistor; the resistor is positioned between the laser chip and the capacitor; the capacitor is connected with the resistor in parallel; and
a gold wire; one end of the gold wire is connected with the laser chip, and the other end of the gold wire is connected with the resistor.
2. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1, wherein: the self-induction inductance generated by the gold wire is between 0.01nH and 10 nH.
3. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1 or 2, wherein: the laser chip, the capacitor and the resistor are sealed in a package.
4. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1, further comprising: an inductor; the inductor is connected with the resistor in series; the inductor and the resistor which are connected in series are connected with the capacitor in parallel; the inductor and the resistor which are connected in series are connected with the laser chip; the inductor and the resistor which are connected in series are positioned between the laser chip and the capacitor.
5. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 4, wherein: the resonance frequency of the RLC circuit consisting of the inductor, the resistor and the capacitor is 0.5 to 2 times of the modulation frequency.
6. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 4 or 5, wherein: the laser chip, the inductor, the capacitor and the resistor are sealed in a package.
7. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1 or 4, wherein: the laser chip is a multi-quantum well semiconductor laser chip.
8. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 1 or 4, further comprising: at least two transmission lines; one end of one transmission line is connected with the first lead, and the other end of the transmission line is connected with the front surface of the capacitor; one end of the other transmission line is connected with the second lead, and the other end of the transmission line is connected with the cathode of the laser chip.
9. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 8, wherein: the laser chip is fixed on a substrate, and the substrate is positioned on a heat sink base; the at least two transmission lines are arranged on the substrate.
10. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 4, wherein: the inductor, the capacitor and the resistor are integrated on the same substrate.
11. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 10, wherein: the laser chip is positioned on the substrate on which the inductor, the capacitor and the resistor are positioned; or the laser chip is positioned on a substrate different from the substrate on which the inductor, the capacitor and the resistor are positioned.
12. A semiconductor laser chip assembly for high speed optical signal transmission according to claim 4, wherein: the capacitance value is between 0.01pF and 1 pF; and/or the inductance value is between 0.01nH and 15 nH; and/or the resistance value is between 0 and 50 ohms.
CN202022692063.1U 2020-11-19 2020-11-19 Semiconductor laser chip assembly for high-speed optical signal transmission Active CN213660865U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202022692063.1U CN213660865U (en) 2020-11-19 2020-11-19 Semiconductor laser chip assembly for high-speed optical signal transmission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202022692063.1U CN213660865U (en) 2020-11-19 2020-11-19 Semiconductor laser chip assembly for high-speed optical signal transmission

Publications (1)

Publication Number Publication Date
CN213660865U true CN213660865U (en) 2021-07-09

Family

ID=76684873

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202022692063.1U Active CN213660865U (en) 2020-11-19 2020-11-19 Semiconductor laser chip assembly for high-speed optical signal transmission

Country Status (1)

Country Link
CN (1) CN213660865U (en)

Similar Documents

Publication Publication Date Title
CN100347916C (en) Optical module
EP2009751B1 (en) Optimized wire bonding of an integrated modulator and laser diode on a mount
CN101521194B (en) High-speed photoelectric subassembly
US6836492B2 (en) Laser-diode module, optical transceiver and fiber transmission system
CN1617402A (en) Transistor shaped can type optical module
JPH11231173A (en) Optical device capable of fast operation
US6477302B2 (en) Microbench and producing method therefor, and optical semiconductor module using same
CN112290378A (en) Semiconductor laser chip assembly for high-speed optical signal transmission
CN112838468B (en) TO packaging structure
CN213660865U (en) Semiconductor laser chip assembly for high-speed optical signal transmission
KR0181896B1 (en) Wide-band device of fast optical module
CN110690645B (en) Laser array driving device and packaging method thereof
CN108923248B (en) Structure of sinking type direct modulation laser and driver and application thereof
WO2022133659A1 (en) Transmitter optical subassembly
JP2010199324A (en) Mounting structure of semiconductor laser element array
CN112289870A (en) Detector chip assembly for high rate optical signal reception
CN213424998U (en) Detector chip assembly for high rate optical signal reception
CN105977241A (en) Packaging structure for photoelectron integrated chip
CN115933070A (en) Optical module and laser assembly
CN216391024U (en) Modulator chip assembly for high rate optical signal generation
US20030235359A1 (en) Segmented modulator for high-speed opto-electronics
CN112134623A (en) Link design capable of realizing high-speed signal transmission and low loss
CN114039668A (en) Modulator chip assembly for high rate optical signal generation
US7873086B2 (en) Semiconductor device
WO2023019809A1 (en) Electro-absorption modulated distributed feedback laser chip and laser chip encapsulation structure

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant