CN118367436A - Optical module for optimizing laser wire-bonding impedance matching - Google Patents
Optical module for optimizing laser wire-bonding impedance matching Download PDFInfo
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000010409 thin film Substances 0.000 claims abstract description 72
- 230000001939 inductive effect Effects 0.000 claims description 19
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 abstract description 51
- 230000005540 biological transmission Effects 0.000 abstract description 9
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- 230000001808 coupling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Abstract
The application discloses an optical module for optimizing laser wire-bonding impedance matching, which relates to the technical field of optical communication, and comprises a laser driving module and a laser, wherein: the first driving end of the laser driving module is connected with a first electrode of the laser through a first microstrip line and a first gold wire in sequence, the second driving end of the laser driving module is connected with a second electrode of the laser through a second microstrip line, a second gold wire, a thin film resistor Rong Jiban and a third gold wire in sequence, and the thin film resistor-capacitor substrate is used for carrying out impedance matching between the second microstrip line and the laser. According to the application, the impedance matching is realized between the laser and the laser driving module through the thin film resistive-capacitive substrate, so that the signal transmission rate between the laser and the laser driving module is increased, and the transmission rate of the optical signal generated by the optical module for optimizing the laser wire-bonding impedance matching can meet the index requirement.
Description
Technical Field
The application relates to the technical field of optical communication, in particular to an optical module for optimizing laser wire bonding impedance matching.
Background
With the rapid development of optical communication technology, the requirements on the rate of optical signals generated by an optical module are higher and higher, the rate of the optical signals needs to reach 100Gbps, even 200Gbps, and the requirements on impedance matching between an optical module laser and a laser driving circuit are higher and higher.
In the related art, a laser of an optical module and a laser driving circuit are connected through a microstrip line, and the laser and the microstrip line are directly connected through gold wire bonding, because the gold wire can be equivalent to an inductive reactance, the longer the length of the gold wire is, the larger the inductive reactance is, the signal transmission capacity of the microstrip line is also deteriorated, so that the quality of an optical signal emitted by the laser is affected, and the optical module cannot meet the transmission rate requirement of the optical signal.
Disclosure of Invention
The application mainly aims to provide an optical module for optimizing laser wire bonding impedance matching, and aims to solve the technical problem that signal transmission performance between a laser and a laser driving circuit is reduced due to inductive reactance generated by a gold wire between the laser and the laser driving circuit in the optical module.
In order to achieve the above object, the present application provides an optical module for optimizing laser wire-bonding impedance matching, comprising:
Laser drive module and laser, wherein: the first driving end of the laser driving module is connected with a first electrode of the laser through a first microstrip line and a first gold wire in sequence, the second driving end of the laser driving module is connected with a second electrode of the laser through a second microstrip line, a second gold wire, a thin film resistor Rong Jiban and a third gold wire in sequence, and the thin film resistor-capacitor substrate is used for carrying out impedance matching between the second microstrip line and the laser.
In one embodiment, the thin film resistive-capacitive substrate includes a substrate, and a capacitance region and a resistance region disposed on the substrate and located on the same plane;
One end of the capacitor area is connected with the second gold wire, the other end of the capacitor area is connected with one end of the resistor area, and the other end of the resistor area is connected with the third gold wire.
In an embodiment, the capacitance region includes a first capacitance region and a second capacitance region that are disposed at intervals, and the capacitance value of the first capacitance region and the capacitance value of the second capacitance region are smaller than the capacitance value of the capacitance region;
One end of the first capacitance area and one end of the second capacitance area are connected with the second gold wire, and the other end of the first capacitance area and the other end of the second capacitance area are connected with one end of the resistance area.
In an embodiment, the capacitance of the capacitance region is determined according to the sum of the equivalent inductance of the second gold wire and the equivalent inductance of the third gold wire.
In one embodiment, the capacitance of the capacitor region is positively correlated to the area of the capacitor region.
In an embodiment, the resistance of the resistive area is determined according to the sum of the equivalent inductive reactance of the second gold wire and the equivalent inductive reactance of the third gold wire.
In one embodiment, the resistance of the resistive region is positively correlated to the area of the resistive region.
In one embodiment, the substrate is a strontium titanate substrate.
In one embodiment, the length of the thin film resistive-capacitive substrate is 0.38 mm, the width of the thin film resistive-capacitive substrate is 0.38 mm, and the thickness of the thin film resistive-capacitive substrate is 0.15 mm.
In one embodiment, the laser is a vertical cavity surface emitting laser.
One or more technical schemes provided by the application have at least the following technical effects:
The application provides an optical module for optimizing laser wire-bonding impedance matching, which comprises a laser driving module and a laser, wherein a first driving end of the laser driving module is connected with a first electrode of the laser through a first microstrip line and a first gold wire, so that the laser driving module can transmit a laser driving signal to the laser, a second driving end of the laser driving module is connected with a second electrode of the laser through a second microstrip line, a second gold wire, a thin film resistor Rong Jiban and a third gold wire, so that the laser and the laser driving module form a complete loop, the laser can convert an electric signal into a corresponding optical signal according to the laser driving signal, photoelectric conversion is completed, and meanwhile, by introducing a thin film resistance-capacitance substrate, the influence of inductance generated by the second gold wire and the third gold wire on signal transmission between the laser driving module and the laser is restrained, the technical problem that signal transmission performance between the laser and the laser driving module is reduced due to inductance generated by the gold wire between the laser and a laser driving circuit in the optical module is solved, the impedance between the laser and the laser driving module is increased, and the transmission rate of the laser driving module can be matched with the laser signal transmission rate so as to meet the transmission requirement.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the related technical descriptions will be briefly described, and it will be apparent to those skilled in the art that other drawings can be obtained according to these drawings without inventive effort.
FIG. 1 is a schematic diagram of a related art optical module;
FIG. 2 is a schematic diagram of a module connection provided by a first embodiment of an optical module for optimizing laser wire-bonding impedance matching according to the present application;
FIG. 3 is a schematic structural diagram of an implementation of a thin film resistive-capacitive substrate provided by a first embodiment of an optical module for optimizing laser wire-bonding impedance matching according to the present application;
FIG. 4 is a first equivalent circuit diagram of a thin film resistive-capacitive substrate provided by a first embodiment of an optical module for optimizing laser wire-bonding impedance matching according to the present application;
Fig. 5 is a schematic structural diagram of an optical module for optimizing laser wire-bonding impedance matching according to a first embodiment of the optical module for optimizing laser wire-bonding impedance matching of the present application;
FIG. 6 is a schematic diagram of a first loss of an optical module for optimizing laser wire-bonding impedance matching without introducing a thin-film resistive-capacitive substrate;
FIG. 7 is a schematic diagram of a second loss of an optical module for optimizing laser wire-bonding impedance matching when the optical module is introduced into a thin film resistive-capacitive substrate;
FIG. 8 is a schematic structural diagram of another implementation of the thin film resistive-capacitive substrate provided by the first embodiment of the optical module for optimizing laser wire-bonding impedance matching according to the present application;
FIG. 9 is a second equivalent circuit diagram of the thin film resistive-capacitive substrate provided by the first embodiment of the optical module for optimizing laser wire-bonding impedance matching of the present application;
The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the technical solution of the present application and are not intended to limit the present application.
For a better understanding of the technical solution of the present application, the following detailed description will be given with reference to the drawings and the specific embodiments.
The main solutions of the embodiments of the present application are: the utility model provides an optimize optical module of laser instrument routing impedance match, includes laser instrument drive module and laser instrument, wherein, laser instrument drive module's first drive end loops through first microstrip line and first gold thread and is connected with the first electrode of laser instrument, and laser instrument drive module's second drive end loops through second microstrip line, second gold thread, thin film resistance Rong Jiban and third gold thread and is connected with the second electrode of laser instrument, and the thin film resistance-capacitance base plate is used for carrying out impedance match between second microstrip line and laser instrument.
The optical module generally comprises a laser driving module and a laser emitter, wherein the laser driving module is used for controlling the power and the modulation rate of the laser emitter so that the laser emitter converts an electric signal into a corresponding optical signal and emits the optical signal.
With the rapid development of optical communication technology, the requirement on the emission rate of an optical signal is higher and higher, the rate of the optical signal needs to reach 10Gps and even 200Gps, and the requirement on impedance matching between an optical module laser and a laser driving module is higher and higher.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an optical module in the related art, in which an optimized laser module includes a circuit board 01, a laser 02 is disposed on the circuit board 01, a first electrode 03 of the laser 02 is connected to a laser driving module (not shown in fig. 1) through a microstrip line 06, and a second electrode 04 of the laser 02 is connected to the laser driving module through another microstrip line 07 to form a complete loop, so that the laser driving module drives the laser 02 to generate a corresponding optical signal. In such an optical module, the laser 02 and the microstrip line are directly connected through the gold wire 05, and as the gold wire 05 itself can be equivalently an inductive reactance, the longer the gold wire 05 is, the larger the inductive reactance is, which affects the quality of the microstrip line transmission signal, thereby affecting the quality of the optical signal emitted by the laser 02, and leading the optical module to fail to meet the transmission rate requirement of the optical signal.
Aiming at the problem that the signal transmission performance between the laser and the laser driving module is reduced due to the inductive reactance generated by the gold wire between the laser 02 and the laser driving module, the application provides a solution, and a thin film resistance-capacitance substrate is added between the second driving end of the laser driving module and the second electrode 04 of the laser 02, so that the influence of the inductive reactance generated by the gold wire 05 is restrained, the impedance matching between a transmission line and the laser 02 is realized, the distortion degree of signals transmitted between the laser 02 and the laser driving module is reduced, and a basis is provided for generating higher-speed optical signals for the optical module.
Based on this, an optical module for optimizing laser wire-bonding impedance matching is provided in the embodiment of the present application, and referring to fig. 2, fig. 2 is a schematic module connection diagram of a first embodiment of an optical module for optimizing laser wire-bonding impedance matching according to the present application.
In this embodiment, the optical module for optimizing the laser wire-bonding impedance matching includes a laser driving module 10 and a laser 02, where a first driving end 11 of the laser driving module 10 is connected with a first electrode 03 of the laser 02 through a first microstrip line 13 and a first gold wire 14 in sequence, and a second driving end 12 of the laser driving module 10 is connected with a second electrode 04 of the laser 02 through a second microstrip line 21, a second gold wire 20, a thin film resistor-capacitor substrate 19 and a third gold wire 18 in sequence.
The thin film resistive-capacitive substrate 19 is used for impedance matching between the second microstrip line 21 and the laser 02.
The optical module for optimizing the laser wire-bonding impedance matching includes a laser driving module 10 and a laser 02, the laser driving module 10 may generate a laser driving signal for driving the laser 02 to emit an optical signal, the laser driving signal may be a driving current signal, and the optical signal output power of the laser 02 may be controlled by controlling the magnitude of the driving current signal. Modulation of the drive current signal may be achieved indirectly by modulating the optical signal, thereby converting the electrical signal into an optical signal. The Laser 02 may generate a corresponding optical signal according to the driving current signal to complete conversion of the electrical signal to the optical signal, and the Laser 02 may be a Laser Diode (LD) or a Vertical Cavity Surface Emitting Laser (VCSEL) or the like.
In this embodiment, the laser 02 is a vertical cavity surface emitting laser.
The laser driving module 10 includes a first driving end 11 and a second driving end 12, wherein the first driving end 11 is connected to a first electrode 03 of the laser 02 through a first microstrip line 13 and a first gold wire 14, and the first electrode 03 is an anode of the laser 02. The first microstrip line 13 is a line structure on an optical module circuit board for optimizing laser wire-bonding impedance matching, and is used for transmitting a driving control signal generated by the laser driving module 10 to the laser 02, and the first electrode 03 of the laser 02 is connected with the first microstrip line 13 by using a first gold wire 14, specifically, a pin of the first electrode 03 may be connected with one end of the first gold wire 14 by a welding manner, and the other end of the first gold wire 14 is welded on the first microstrip line 13, so as to realize connection between the first electrode 03 and the first microstrip line 13.
The second driving end 12 of the laser driving module 10 is connected with the second electrode 04 of the laser 02 sequentially through the second microstrip line 21, the second gold wire 20, the thin film resistor-capacitor substrate 19 and the third gold wire 18, the second electrode 04 is the cathode of the laser 02, the second driving end 12 is the grounding end of the laser driving module 10, and the second electrode 04 of the laser 02 is connected with the second driving end 12 in the connection mode to form a complete loop.
The second microstrip line 21 is a second line structure on the optical module circuit board for optimizing laser wire-bonding impedance matching, the second electrode 04 can be connected with the thin film resistive-capacitive substrate 19 by using a third gold wire 18, and the thin film resistive-capacitive substrate 19 can be connected with the second microstrip line 21 by using a second gold wire 20. Specifically, the pins of the second electrode 04 may be connected to one end of the third gold wire 18 by soldering, and the other end of the third gold wire 18 is connected to one pin of the capacitor region in the thin film resistive-capacitive substrate 19 by soldering, so as to realize connection between the thin film resistive-capacitive substrate 19 and the second electrode 04.
In this embodiment, by adding the thin film resistor Rong Jiban between the second driving end 12 of the laser driving module 10 and the second electrode 04 of the laser 02, introducing the capacitor and the resistor, the influence of inductive reactance generated by gold wires can be suppressed, impedance matching between the transmission line and the laser 02 is realized, the distortion degree of signals transmitted between the laser 02 and the laser driving module 10 is reduced, and a basis is provided for generating higher-speed optical signals by the optical module.
In a possible embodiment, referring to fig. 3, fig. 3 is a schematic structural diagram of an embodiment of a thin film resistive-capacitive substrate 19, and as shown in fig. 3, the thin film resistive-capacitive substrate 19 includes a substrate 001, and a capacitance region 002 and a resistance region 003 disposed on the substrate 001 and located on the same plane.
One end of the capacitor region 002 is connected to the second gold wire 20, the other end of the capacitor region 002 is connected to one end of the resistor region 003, and the other end of the resistor region 003 is connected to the third gold wire 18.
Specifically, the thin film resistor-capacitor substrate 19 includes a substrate 001, and a capacitor region 002 and a resistor region 003 disposed on the substrate 001, where the substrate 001 is made of an insulating material such as ceramic, glass or polymer substrate. The substrate 001 provides a base structure and support, and the material of the substrate 001 determines the mechanical strength, temperature resistance, size, thickness, etc. of the substrate.
Further, the substrate 001 is a strontium titanate substrate.
In this embodiment, the substrate 001 is a strontium titanate substrate, and a strontium titanate material is used. The strontium titanate has higher dielectric constant and stability of crystal structure, so that the strontium titanate substrate is suitable for manufacturing optical and photoelectric devices.
Further, the capacitance value of the capacitance region 002 is determined according to the sum of the equivalent inductance of the second gold wire 20 and the equivalent inductance of the third gold wire 18, and the capacitance value of the capacitance region 002 and the area of the capacitance region 002 are in positive correlation;
the resistance value of the resistive region 003 is determined according to the sum of the equivalent inductance of the second gold wire 20 and the equivalent inductance of the third gold wire 18, and the resistance value of the resistive region 003 also has a positive correlation with the area of the resistive region 003.
Specifically, the resistive region 003 in the thin film resistive-capacitive substrate 19 may be composed of a resistive material having high resistance to achieve a desired resistance value while ensuring that the thickness of the resistive region is low, and generally, the thickness of the resistive region 003 is in the range of several tens of nanometers to several micrometers. Similarly, the capacitance region 002 is composed of a high dielectric constant material and electrode layers at both ends of the high dielectric constant material, and its thickness is also in the range of several tens of nanometers to several micrometers. The thin film resistive-capacitive substrate 19 further includes a connection layer formed by a conductive metal thin film, for connecting the capacitance region 002 and the resistance region 003 to form a resistive-capacitive structure.
It can be understood that, when the materials and thicknesses of the resistive region 003 and the capacitive region 002 are set to be constant, the resistance value of the resistive region 003 is positively correlated with the area of the resistive region 003, that is, the larger the area of the resistive region 003 is, the larger the resistance value of the resistive region 003 is; the capacitance value of the capacitance region 002 is positively correlated with the area of the capacitance region 002, that is, the larger the area of the capacitance region 002, the larger the capacitance value of the capacitance region 002. Therefore, by adjusting the area of the resistive region 003 and the area of the capacitive region 002, the capacitance value and the resistance value of the thin film resistive-capacitive substrate 19 can be adjusted.
It should be noted that, as shown in fig. 3, the shape of the capacitor region 002 is designed to be an "L" shape in the present embodiment, so that the space utilization rate of the substrate 001 can be optimized to a certain extent, and the "L" shape design can more effectively utilize the space layout of the substrate, thereby saving space and being beneficial to miniaturization and high density integration. The L-shaped design can be more conveniently connected with surrounding circuits, the second gold wire 20 and the third gold wire 18 can be naturally extended and connected according to the design of the L-shaped capacitance region 002, wiring is simplified, wiring difficulty and complexity are reduced, and inductive reactance influence caused by overlong wiring is reduced.
Referring to fig. 4, fig. 4 is a first equivalent circuit diagram of the thin film resistive-capacitive substrate 19 in the present embodiment, specifically, the resistor region 003 may be equivalent to the resistor R1, the capacitor region 002 may be equivalent to the capacitor C1, and the sum of the equivalent inductance of the second gold wire 20 and the equivalent inductance of the third gold wire 18 may be equivalent to the equivalent inductance L1.
The capacitance value of the capacitor region 002 can be determined according to the inductance of the equivalent inductance L1, the resistance value of the resistor region 003 can also be determined according to the inductance of the equivalent inductance L1, the capacitance value of the thin film resistive-capacitive substrate 19 is the capacitance value of the capacitor region 002, and the resistance value of the thin film resistive-capacitive substrate 19 is the resistance value of the resistor region 003, so that both the capacitance value and the resistance value of the thin film resistive-capacitive substrate 19 can be determined according to the inductance of the equivalent inductance L1.
Specifically, the purpose of introducing the thin film resistive-capacitive substrate 19 in this embodiment is to increase the impedance and the capacitive reactance between the second microstrip line 21 and the second electrode 04, theoretically, when the capacitive reactance of the equivalent inductance and the capacitive reactance of the equivalent capacitance cancel each other, the best impedance matching can be achieved, in practical operation, it is necessary to analyze and measure the inductive reactance of the gold wire first, determine the size and the frequency characteristic thereof, and then determine the operating frequency range of the optical module, where the compensating effects of the capacitance and the resistance on the inductive reactance may be different. And calculating proper capacitance and resistance values according to the inductance value and the working frequency of the gold wire. Finally, the effect of the thin film resistive-capacitive substrate 19 in the optical module is evaluated by measuring the performance of the impedance matching between the laser driving module 10 and the laser 02, and in this embodiment, the expected effect of optimizing the optical module for laser wire-bonding impedance matching can be achieved by setting the resistance value of R1 to 50 ohms and the capacitance value of C1 to 180 picofarads.
It can be understood that the current packaging mode of the smallest common capacitor and common resistor is 01005 packaging, that is, the specification of a single capacitor or resistor is 0.4 mm in length, 0.2 mm in width and 0.2 mm in thickness, and the common capacitor and common resistor are usually integrated on a circuit board of an optical module for optimizing laser routing impedance matching in a direct mounting mode, so that there is still an optimization space to further improve the integration level of the optical module for optimizing laser routing impedance matching.
Compared with the case that the common capacitor and the common resistor packaged in 01005 are directly attached to the circuit board of the optical module for optimizing the laser wire-bonding impedance matching, in the present embodiment, the thin-film resistive-capacitive substrate 19 used on the circuit board of the optical module for optimizing the laser wire-bonding impedance matching directly forms the thin-film capacitor region 002 and the resistor region 003 on the substrate, so that the integration level of the optical module for optimizing the laser wire-bonding impedance matching can be improved.
Further, the length of the thin film resistive-capacitive substrate 19 is 0.38 mm, the width of the thin film resistive-capacitive substrate 19 is 0.38 mm, and the thickness of the thin film resistive-capacitive substrate 19 is 0.15 mm.
In the present embodiment, the capacitance of the thin film resistive-capacitive substrate 19 is also related to the thickness of the capacitor region 002, and when the area of the capacitor region 002 is unchanged, the thicker the capacitor region 002 is, the higher the capacitance is, and generally, the capacitance of the capacitor region 002 is only tens to hundreds picofarads required to meet the impedance matching requirement between the laser driving module 10 and the laser 02. Similarly, the resistance of the thin film resistive-capacitive substrate 19 is also related to the thickness of the resistive region 003, and when the area of the resistive region 003 is unchanged, the thinner the resistive region 003 is, the higher the resistivity is, and the resistance of the resistor satisfying the impedance matching requirement between the laser driving module 10 and the laser 02 is only several tens of ohms. In practice, the thicknesses of the resistive region 003 and the capacitive region 002 that meet the impedance matching requirement between the laser driving module 10 and the laser 02 are typically set between several tens of nanometers to several millimeters. Therefore, in practical design, the overall size of the thin film resistive-capacitive substrate 19 is not too large, for example, the size of the thin film resistive-capacitive substrate 19 is designed to be 0.38 mm in length, 0.38 mm in width, and 0.15 mm in thickness, so that the foregoing requirements for the capacitance and resistance of the thin film resistive-capacitive substrate 19 (the resistance is 50 ohms and the capacitance is 180 picofarads) can be met, and of course, the overall size of the thin film resistive-capacitive substrate 19 can be smaller in practical application.
It can be appreciated that, compared with the mode of attaching the common capacitor and the common resistor to the circuit board of the optical module for optimizing the laser routing impedance matching, the application adopts the thin film resistive-capacitive substrate 19, which can further reduce the space occupied by the resistor and the capacitor on the circuit board of the optical module for optimizing the laser routing impedance matching, and can reduce the extra welding steps, improve the reliability, and is suitable for the design or application of a single-path or multi-path optical module. Meanwhile, in order to reasonably utilize the substrate space, the distance between the capacitance region 002 or the resistance region 003 and the boundary of the substrate can be controlled between 0 mm and 0.06 mm.
Referring to fig. 5, fig. 5 is a schematic structural diagram of an optical module for optimizing laser wire-bonding impedance matching in this embodiment, as shown in fig. 5, the optical module for optimizing laser wire-bonding impedance matching includes a circuit board 01, a first driving end of a laser driving module (not shown in fig. 5) disposed on the circuit board 01 is connected with a first electrode 03 of a laser 02 through a first microstrip line 13 and a first gold wire 14, and a second driving end of the laser driving module is connected with a second electrode 04 of the laser 02 sequentially through a second microstrip line 21, a second gold wire 20, a capacitance region 002 of a thin film resistive-capacitive substrate 19, a resistance region 003 of the thin film resistive-capacitive substrate 19, and a third gold wire 18.
An isolation region is provided between the first microstrip line 13 and the second microstrip line 21. Since the microstrip lines are exposed on the surface of the optical module circuit board 01 for optimizing the laser wire-bonding impedance matching, signals transmitted by the first microstrip line 13 and signals transmitted by the second microstrip line 21 may be mutually influenced by electromagnetic coupling effects, and the addition of the isolation area can reduce the electromagnetic coupling effects, thereby reducing crosstalk noise.
In this embodiment, a thin film resistor Rong Jiban is introduced between the laser driving module (not shown in the figure) and the laser 02, and the influence of inductive reactance generated by the second gold wire 20 and the third gold wire 18 on signal transmission is suppressed by using the capacitance provided by the capacitance region 002 in the thin film resistor-capacitor substrate 19 and the resistance provided by the resistance region 003 in the thin film resistor-capacitor substrate 19, so that impedance matching between the laser driving module and the laser 02 is realized, thereby improving the insertion loss parameter S21 and the return loss parameter S11, reducing energy loss caused by impedance mismatch between the laser driving module and the laser 02, and further enabling the optical module for optimizing laser wire bonding impedance matching to generate a higher-rate optical signal to provide a basis.
In a specific example, as shown in fig. 6 and 7, fig. 6 is a first loss schematic diagram of the variation of the insertion loss parameter S21 with the operating frequency of the laser driving signal when the thin film resistive-capacitive substrate 19 is not introduced, the horizontal axis of fig. 6 represents the operating frequency of the laser driving signal, and the vertical axis of fig. 6 represents the insertion loss parameter S21 when the thin film resistive-capacitive substrate 19 is not introduced. Fig. 7 is a second loss diagram showing the variation of the insertion loss parameter S21 with the operating frequency of the laser driving signal when the thin film resistive-capacitive substrate 19 is introduced, wherein the horizontal axis of fig. 7 shows the operating frequency of the laser driving signal, and the vertical axis of fig. 7 shows the insertion loss parameter S21 when the thin film resistive-capacitive substrate 19 is introduced.
As can be seen from fig. 6 and fig. 7, after impedance matching between the laser driving module and the laser 02 is achieved by introducing the thin film resistive-capacitive substrate 19, the laser driving module can transmit a laser driving signal with a higher working frequency to the laser 02, that is, the modulation bandwidth of the laser driving signal can be increased, so that the modulation rate of the laser driving module to the laser 02 is increased, and the laser 02 generates an optical signal with a higher transmission rate.
In another possible embodiment, referring to fig. 8, fig. 8 is a schematic structural diagram of another embodiment of a thin film resistive-capacitive substrate 19, where the capacitive region 002 on the substrate 001 includes a first capacitive region 005 and a second capacitive region 006 that are disposed at intervals.
One end of the first capacitance region 005 and one end of the second capacitance region 006 are both connected to the second gold wire 20, and the other end of the first capacitance region 005 and the other end of the second capacitance region 006 are both connected to one end of the resistance region 003.
In the present embodiment, a first capacitance region 005, a second capacitance region 006, and a resistance region 003 are provided in the thin film resistive-capacitive substrate 19, wherein one end of the first capacitance region 005 and one end of the second capacitance region 006 are both connected to the second gold wire 20, the other end of the first capacitance region 005 and the other end of the second capacitance region 006 are both connected to one end of the resistance region 003, and the other end of the resistance region 003 is connected to the laser 02 through the third gold wire 18. It should be understood that this connection is understood to be a parallel relationship between the two capacitance areas, that is, the sum of the capacitance of the first capacitance area 005 and the capacitance of the second capacitance area 006 is the total capacitance of the thin film resistive-capacitive substrate 19.
Referring to fig. 9, fig. 9 is a second equivalent circuit diagram of the thin film resistive-capacitive substrate 19 in the present embodiment, and as shown in fig. 9, a capacitor C2 (equivalent to the first capacitor region 005), a capacitor C3 (equivalent to the second capacitor region 006), and a resistor R2 (equivalent to the resistor region 003) form a compensation network with an equivalent inductance L2 formed by the second gold wire 20 and the third gold wire 18. This network architecture can provide more flexible control to accommodate variations in different operating frequencies and inductive reactance.
Specifically, in this embodiment, an impedance matching network is constructed by the capacitor C2, the capacitor C3 and the resistor R2, and the capacitor C2 and the capacitor C3 are connected in parallel, so that the total capacitance value of the thin film resistive-capacitive substrate 19 can be regarded as the sum of the capacitance values of C2 and C3, and by comparing the inductance of the equivalent inductor L2 with the capacitance formed by the capacitor C2 and the capacitor C3, when the capacitance formed by the capacitor C2 and the capacitor C3 is offset, the optimal impedance matching can be achieved.
It can be understood that, in the capacitor made of the same material, the smaller the capacitor is, the higher the self-resonant frequency is, and in this embodiment, a larger capacitor is split into two smaller capacitors (the first capacitor region 005 and the second capacitor region 006), so that the self-resonant frequency of the capacitor in the impedance matching network can be improved, so as to meet the working requirement under the high-frequency signal environment.
In general, the embodiment divides a larger capacitance area into two smaller capacitance areas, which is conducive to realizing more proper impedance matching, and simultaneously adapts to higher frequency of working signals, thereby improving performance and stability of an optical module for optimizing laser routing impedance matching.
It is to be understood that portions of the present disclosure may be implemented in hardware, software, firmware, or a combination thereof. In the description of the above embodiments, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely illustrative embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about variations or substitutions within the technical scope of the present application, and the application should be covered. Therefore, the protection scope of the application is subject to the protection scope of the claims.
The foregoing is only a part of embodiments of the present application, and is not intended to limit the scope of the present application, and all the equivalent structural changes made by the description and drawings of the present application or the direct/indirect application in other related technical fields are included in the scope of the present application.
Claims (10)
1. An optical module for optimizing laser wire-bonding impedance matching, comprising a laser driving module and a laser, wherein:
The first driving end of the laser driving module is connected with the first electrode of the laser through a first microstrip line and a first gold wire in sequence, and the second driving end of the laser driving module is connected with the second electrode of the laser through a second microstrip line, a second gold wire, a thin film resistor Rong Jiban and a third gold wire in sequence;
the thin film resistive-capacitive substrate is used for performing impedance matching between the second microstrip line and the laser.
2. An optical module for optimizing laser routing impedance matching as recited in claim 1, wherein said thin film resistive-capacitive substrate comprises a substrate and a capacitive region and a resistive region disposed on said substrate and in a same plane;
One end of the capacitance area is connected with the second gold wire, the other end of the capacitance area is connected with one end of the resistance area, and the other end of the resistance area is connected with the third gold wire.
3. The optical module for optimizing laser routing impedance matching of claim 2, wherein the capacitive region comprises a first capacitive region and a second capacitive region arranged at intervals, and the capacitance of the first capacitive region and the capacitance of the second capacitive region are smaller than the capacitance of the capacitive region;
one end of the first capacitance area and one end of the second capacitance area are connected with the second gold wire, and the other end of the first capacitance area and the other end of the second capacitance area are connected with one end of the resistance area.
4. An optical module for optimizing laser routing impedance matching as recited in claim 2, wherein the capacitance of the capacitive region is determined based on the sum of the equivalent inductive reactance of the second gold wire and the equivalent inductive reactance of the third gold wire.
5. An optical module for optimizing laser routing impedance matching as recited in claim 4, wherein the capacitance of said capacitive region is in positive correlation with the area of said capacitive region.
6. An optical module for optimizing laser routing impedance matching as recited in claim 2, wherein the resistance of the resistive region is determined based on the sum of the equivalent inductive reactance of the second gold wire and the equivalent inductive reactance of the third gold wire.
7. An optical module for optimizing laser routing impedance matching as recited in claim 6, wherein the resistance of said resistive region is in positive correlation with the area of said resistive region.
8. An optical module for optimizing laser routing impedance matching as recited in claim 2, wherein said substrate is a strontium titanate substrate.
9. An optical module for optimizing laser routing impedance matching as recited in claim 8, wherein the thin film resistive-capacitive substrate has a length of 0.38 millimeters, a width of 0.38 millimeters, and a thickness of 0.15 millimeters.
10. An optical module for optimizing laser routing impedance matching as recited in any of claims 1-9, wherein the laser is a vertical cavity surface emitting laser.
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