CN112230297B - Detector based on N×M multi-frequency antenna array and SBD array - Google Patents
Detector based on N×M multi-frequency antenna array and SBD array Download PDFInfo
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- CN112230297B CN112230297B CN202010917423.5A CN202010917423A CN112230297B CN 112230297 B CN112230297 B CN 112230297B CN 202010917423 A CN202010917423 A CN 202010917423A CN 112230297 B CN112230297 B CN 112230297B
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
- H01Q5/28—Arrangements for establishing polarisation or beam width over two or more different wavebands
Abstract
The present invention discloses a detector based on an NxM multi-frequency antenna array and an SBD array, which can further improve detection sensitivity by replacing a single Schottky diode used for detection in a conventional detector with an NxM Schottky diode array. In addition, by replacing a single terahertz antenna used as a terahertz signal receiving antenna in a traditional detector with an N×M terahertz antenna array, the energy of low-kinetic energy electrons in the antenna can be enhanced by utilizing the resonance of terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved again. And the multi-frequency terahertz antenna with any different frequency points can be designed according to actual requirements, so that the detection of a plurality of any different frequency points can be supported by one detector without replacing the terahertz detector, and the cost of terahertz detection is effectively reduced.
Description
Technical Field
The invention relates to the technical field of terahertz detectors, in particular to a detector based on an N multiplied by M multi-frequency antenna array and an SBD array.
Background
Terahertz has wide application prospect and wide technical application in fields such as astrophysics, material science, biomedical science, environmental science, spectrum and imaging technology, information science and the like. The terahertz technology can remarkably improve the strength of China in the aspects of aerospace, space communication, biomedical treatment, even food detection and the like. The terahertz detector serving as the terahertz application basis is a key component and instrument for terahertz security and detection. Therefore, the development of high-performance terahertz detectors is critical for the application and development of terahertz technology.
Schottky diodes have the advantages of fast speed, good nonlinear effect, capability of operating at normal temperature, easy integration, etc., and are therefore often used as detection diodes in terahertz detectors. Conventional terahertz detectors based on schottky diodes generally employ a single-frequency-point terahertz antenna and a single SBD structure. At present, the terahertz radiation source is generally smaller in power and discontinuous in frequency point. Therefore, a single-frequency terahertz antenna is adopted to receive terahertz signals, which is likely to cause non-ideal detection effect and cannot meet the actual requirements of detection of different frequency points. Also, detection with a single SBD may not detect a valid signal due to weak detection signals. Therefore, developing a probe based on a multi-frequency terahertz antenna array and an SBD array is a current urgent problem to be solved.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a detector with high sensitivity, multiple frequency points and low cost based on an N multiplied by M multi-frequency antenna array and an SBD array.
In order to achieve the above purpose, the technical scheme provided by the invention is as follows:
the detector based on the NxM multi-frequency antenna array and the SBD array comprises an NxM multi-frequency point terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a detector and readout circuit test switch, a readout circuit and an NxM Schottky diode array;
the transmission line TL1 in the matching network is connected with an N x M multi-frequency point terahertz antenna array, the right end of the transmission line TL2 is connected with an N x M Schottky diode array, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit;
the other end of the blocking capacitor C1 is grounded.
Further, the nxm schottky diode array includes nxm schottky diode units arranged in a longitudinal and a lateral direction, N first row selection switches, and M first column selection switches;
each schottky diode unit comprises a schottky diode, a bias voltage Vb1, a bias resistor Rb1 and a first NMOSFET;
in each Schottky diode unit, the anode of the Schottky diode is respectively connected with one end of a bias resistor Rb1 and M of the first NMOSFET SEL1 The end is connected with the cathode of the Schottky diode to be grounded; the other end of the bias resistor Rb1 is connected with bias voltage Vb1 and is used for supplying power to the Schottky diode;
the SEL1 end of the first NMOSFET in each Schottky diode unit is connected with a first column selection switch of the column;
v of the first NMOSFET in each Schottky diode cell out1 The terminals are connected with the first row selection switch of the row.
Further, the matching network employs a grounded coplanar waveguide transmission line.
Further, the nxm multi-frequency-point terahertz antenna array includes nxm multi-frequency-point terahertz antenna units, N second row selection switches, and M second column selection switches;
each N multiplied by M multi-frequency-point terahertz antenna unit comprises a multi-frequency-point terahertz antenna and a second NMOSFET;
in each N multiplied by M multi-frequency-point terahertz antenna unit, M of the multi-frequency-point terahertz antenna and the second NMOSFET SEL The terminal is connected with the SEL terminal of the second NMOSFET and the second column selection switch of the column out The ends are connected with a second row selection switch of the row.
Further, the port impedance of the n×m multi-frequency terahertz antenna array is consistent with the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is consistent with the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is consistent with the port impedance of the n×m schottky diode array.
Further, the readout circuit comprises a low noise chopper amplifier and a high resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces offset and 1/f noise of the amplifier by utilizing a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
Further, the detector and readout circuit test switch includes a detector test switch S1 and a readout circuit test switch S2; the detector test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively.
Compared with the prior art, the scheme has the following principle and advantages:
1. the detection sensitivity can be further improved by replacing the single schottky diode used for detection in the conventional detector with an n×m schottky diode array.
2. By replacing a single terahertz antenna used for receiving terahertz signals in a traditional detector with an N multiplied by M terahertz antenna array, the energy of low-kinetic energy electrons in the antenna can be enhanced by utilizing the resonance of terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved.
3. The single-frequency point terahertz antenna used for receiving the terahertz signals in the traditional detector is replaced by the multi-frequency point terahertz antenna (the bandwidth of each frequency point can be designed to be a narrow band according to actual requirements), so that the detector can support detection of any plurality of different frequency points. The traditional detector needs to replace the detectors with different frequency points for detection with different frequency points, the multi-frequency-point terahertz antenna with any different frequency points can be designed according to actual requirements, and accordingly detection of a plurality of any different frequency points can be achieved through one detector without replacing the terahertz detector, and cost of terahertz detection is effectively reduced.
4. The detector and the reading circuit test switch are introduced, so that the detector unit and the reading circuit can be tested when the circuit fails, and the specific failure reason and position of the circuit can be found quickly.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the services required in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the figures in the following description are only some embodiments of the present invention, and that other figures can be obtained according to these figures without inventive effort to a person skilled in the art.
Fig. 1 is a schematic diagram of the structure of a detector based on an nxm multi-frequency antenna array and an SBD array according to the present invention.
Detailed Description
The invention is further illustrated by the following examples:
as shown in fig. 1, the detector based on the n×m multi-frequency antenna array and the SBD array comprises an n×m multi-frequency point terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a detector and readout circuit test switch, a readout circuit, and an n×m schottky diode array.
The matching network adopts a grounded coplanar waveguide (GCPW) transmission line, the transmission line TL1 is connected with an NxM multi-frequency-point terahertz antenna array, the right end of the transmission line TL2 is connected with an NxM Schottky diode array, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit; the other end of the blocking capacitor C1 is grounded.
Specifically, the nxm multi-frequency point terahertz antenna array includes nxm multi-frequency point terahertz antenna units (D11, D12, D13, …, DNM), N second Row selection switches (Row 1, row2, row3, …, row N), and M second Column selection switches (Column 1, column2, column3, …, column nm); each N multiplied by M multi-frequency-point terahertz antenna unit comprises a multi-frequency-point terahertz antenna and a second NMOSFET; in each N×M multifrequency point terahertz antenna unit, the multifrequency point terahertz antenna is connected with the MSEL end of the second NMOSFET, the SEL end of the second NMOSFET is connected with the second column selection switch of the column, and the Vout end of the second NMOSFET is connected with the second row selection switch of the row.
The port impedance of the n×m multi-frequency terahertz antenna array is consistent with the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is consistent with the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is consistent with the port impedance of the n×m schottky diode array.
Specifically, the nxm schottky diode array includes nxm schottky diode units (E11, E12, E13, …, ENM) arranged in a longitudinal and a lateral direction, N first row selection switches (row 1, row2, row3, …, row N), and M first column selection switches (column 1, column2, column3, …, column nm); each schottky diode unit comprises a schottky diode, a bias voltage Vb1, a bias resistor Rb1 and a first NMOSFET; in each Schottky diode unit, the anode of the Schottky diode is respectively biased withOne end of the resistor Rb1, M of the first NMOSFET SEL1 The end is connected with the cathode of the Schottky diode to be grounded; the other end of the bias resistor Rb1 is connected with bias voltage Vb1 and is used for supplying power to the Schottky diode; the SEL1 end of the first NMOSFET in each Schottky diode unit is connected with a first column selection switch of the column; v of the first NMOSFET in each Schottky diode cell out1 The terminals are connected with the first row selection switch of the row.
Specifically, the readout circuit includes a low noise chopper amplifier and a high resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces offset and 1/f noise of the amplifier by utilizing a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
The detector and readout circuit test switch comprises a detector test switch S1 and a readout circuit test switch S2; the detector test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively. The method is mainly used for conveniently testing the detector and the readout circuit in the circuit fault process so as to determine the specific fault cause and position.
In this embodiment, the specific working procedure of the detector based on the nxm multi-frequency antenna array and the SBD array is as follows:
when the second Row selection switch and the second Column selection switch of the NxM multi-frequency terahertz antenna array are closed, and the first Row selection switch and the first Column selection switch of the NxM Schottky diode array are closed (such as Row selection switch (Row 2) and Row switch (Column 2) and Column selection switch (Column 2) are closed), the detector test switch S1 is opened, the read-out circuit test switch S2 is opened, the terahertz signal received by the detector is amplified by the chopper amplifier, enters the high-resolution analog-to-digital converter for digital processing, and then is processed from D out Outputting the position;
when a second Row selection switch and a second Column selection switch of the NxM multi-frequency point terahertz antenna array are closed, and a first Row selection switch and a first Column selection switch of the NxM Schottky diode array are closed (such as Row selection switch (Row 3) and Column selection switch (Column 3) are closed), a detector test switch S1 is closed, a read-out circuit test switch S2 is opened, a detector performance test is performed, if a terahertz signal can be received to indicate that the detector works normally, otherwise, the detector works out;
when the second row selection switch and the second column selection switch of the NxM multi-frequency terahertz antenna array and the first row selection switch and the first column selection switch of the NxM Schottky diode array are all disconnected, the detector test switch S1 is disconnected, the readout circuit test switch S2 is closed, the performance test of the readout circuit is performed, if D out The signal which is normally output and is digitally processed by the high-resolution analog-to-digital converter indicates that the reading circuit works normally, otherwise, the reading circuit works abnormally.
The present embodiment can further improve the detection sensitivity by replacing a single schottky diode used for detection in a conventional detector with an nxm schottky diode array. In addition, by replacing a single terahertz antenna used as a terahertz signal receiving antenna in a traditional detector with an N×M terahertz antenna array, the energy of low-kinetic energy electrons in the antenna can be enhanced by utilizing the resonance of terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved again. In addition, the multi-frequency terahertz antenna with any different frequency points can be designed according to actual requirements, so that the detection of a plurality of any different frequency points can be supported by one detector without replacing the terahertz detector, and the cost of terahertz detection is effectively reduced.
The above embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, so variations in shape and principles of the present invention should be covered.
Claims (6)
1. The detector based on the NxM multi-frequency antenna array and the SBD array is characterized by comprising an NxM multi-frequency point terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a detector and readout circuit test switch, a readout circuit and an NxM Schottky diode array;
the transmission line TL1 in the matching network is connected with an N x M multi-frequency point terahertz antenna array, the right end of the transmission line TL2 is connected with an N x M Schottky diode array, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit; the other end of the blocking capacitor C1 is grounded; one end of the transmission line TL1, which is far away from the NxM multi-frequency point terahertz antenna array, is respectively connected with the left end of the transmission line TL2 and the upper end of the transmission line TL 3;
the N x M Schottky diode array comprises N x M Schottky diode units which are vertically and horizontally arranged, N first row selection switches and M first column selection switches;
each schottky diode unit comprises a schottky diode, a bias voltage Vb1, a bias resistor Rb1 and a first NMOSFET;
in each Schottky diode unit, the anode of the Schottky diode is respectively connected with one end of a bias resistor Rb1 and M of the first NMOSFET SEL1 The end is connected with the cathode of the Schottky diode to be grounded; the other end of the bias resistor Rb1 is connected with bias voltage Vb1 and is used for supplying power to the Schottky diode;
the SEL1 end of the first NMOSFET in each Schottky diode unit is connected with a first column selection switch of the column;
v of the first NMOSFET in each Schottky diode cell out1 The terminals are connected with the first row selection switch of the row.
2. The N x M multi-frequency antenna array and SBD array based detector according to claim 1, wherein the matching network employs grounded coplanar waveguide transmission lines.
3. The n×m multi-frequency antenna array and SBD array-based detector according to claim 1, wherein the n×m multi-frequency-point terahertz antenna array includes n×m multi-frequency-point terahertz antenna units, N second row selection switches, and M second column selection switches;
each N multiplied by M multi-frequency-point terahertz antenna unit comprises a multi-frequency-point terahertz antenna and a second NMOSFET;
in each N multiplied by M multi-frequency-point terahertz antenna unit, M of the multi-frequency-point terahertz antenna and the second NMOSFET SEL The terminal is connected with the SEL terminal of the second NMOSFET and the second column selection switch of the column out The ends are connected with a second row selection switch of the row.
4. The n×m multi-frequency antenna array and SBD array based detector according to claim 1, wherein the port impedance of the n×m multi-frequency terahertz antenna array is identical to the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is identical to the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is identical to the port impedance of the n×m schottky diode array.
5. The N x M multi-frequency antenna array and SBD array based detector according to claim 1, wherein the readout circuitry comprises a low noise chopper amplifier and a high resolution analog to digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces offset and 1/f noise of the amplifier by utilizing a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
6. The n×m multi-frequency antenna array and SBD array based detector according to claim 1, wherein the detector and readout circuit test switches include detector test switch S1 and readout circuit test switch S2; the detector test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN106301230A (en) * | 2016-08-24 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW |
| CN109239787A (en) * | 2018-09-19 | 2019-01-18 | 天津大学 | A kind of terahertz wave detector based on array plaster antenna |
| CN109547717A (en) * | 2018-10-31 | 2019-03-29 | 中国科学院半导体研究所 | THz wave array image sensor chip |
| CN109556711A (en) * | 2018-10-18 | 2019-04-02 | 天津大学 | It is a kind of based on parallel connection to the field effect transistor terahertz detector of pipe structure |
| CN109556714A (en) * | 2018-10-31 | 2019-04-02 | 中国科学院半导体研究所 | Terahertz light spectrum chip |
| CN110380186A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on N × M DRA array and N × M NMOSFET array |
| CN110381271A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | N × M rasterizes detector array based on the MOSFET grid of Meta Materials |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108007566B (en) * | 2017-12-29 | 2023-11-03 | 同方威视技术股份有限公司 | Terahertz detector |
-
2020
- 2020-09-03 CN CN202010917423.5A patent/CN112230297B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN106301230A (en) * | 2016-08-24 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW |
| CN109239787A (en) * | 2018-09-19 | 2019-01-18 | 天津大学 | A kind of terahertz wave detector based on array plaster antenna |
| CN109556711A (en) * | 2018-10-18 | 2019-04-02 | 天津大学 | It is a kind of based on parallel connection to the field effect transistor terahertz detector of pipe structure |
| CN109547717A (en) * | 2018-10-31 | 2019-03-29 | 中国科学院半导体研究所 | THz wave array image sensor chip |
| CN109556714A (en) * | 2018-10-31 | 2019-04-02 | 中国科学院半导体研究所 | Terahertz light spectrum chip |
| CN110380186A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on N × M DRA array and N × M NMOSFET array |
| CN110381271A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | N × M rasterizes detector array based on the MOSFET grid of Meta Materials |
Non-Patent Citations (1)
| Title |
|---|
| 太赫兹新型探测器的研究进展及应用;张玉平等;红外与毫米波学报;20200415;第39卷(第2期);191-207 * |
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