CN106301230A - A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW - Google Patents
A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW Download PDFInfo
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- CN106301230A CN106301230A CN201610713184.5A CN201610713184A CN106301230A CN 106301230 A CN106301230 A CN 106301230A CN 201610713184 A CN201610713184 A CN 201610713184A CN 106301230 A CN106301230 A CN 106301230A
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- schottky diode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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Abstract
The invention discloses a kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW, including high frequency short circuit secter pat and intermediate frequency lc circuit at input and output GSG probe, RF local oscillator coupling, two independent Schottky diodes, intermediate frequencies, all being connected by transmission line between high frequency short circuit secter pat and intermediate frequency lc circuit at input and output GSG probe, RF local oscillator coupling, two independent Schottky diodes, intermediate frequencies, transmission line is CPW；The present invention uses the mixting circuit structure of CPW can avoid the reduction process of complexity for the thick substrate of the such high-k of GaAs and reduce the complexity installed, and design flexibility is high；Use CPW sector branch, available first-harmonic and the biobelt short-circuit structure of harmonic wave；Utilizing the most close metal of bilayer, can design short and small intermediate frequency filtering match circuit, and separation assembly is difficult to control to area, this is to array detection unfavorable.
Description
Technical field
The present invention relates to use CPW integrated circuit technique in the case of thick substrate, particularly a kind of based on thick substrate Xiao Te
The integrated single balance mixer of based diode CPW.
Background technology
GaAs diode begins to development from the seventies in last century, and separation based on GaAs Schottky diode so far is mixed
Technology has been applied widely, and especially in Terahertz field, but it is main for be concentrated mainly on discrete device combining quartz thin film,
Having constraint greatly to circuit design owing to device separates this kind of mode with circuit, circuit must obey device property could be organic
Desired function can be realized.Schottky integrated circuit last decade has developed, but no matter from the perspective of which, current circuit develops
Trend is towards thin flm circuit direction (quartz thin film thickness < 50um, GaAs circuit thickness < 10um), to technique and matching requirements
The harshest, there is great problems in success rate, can only become the experimental article of minority oversea laboratories, in conjunction with metallic cavity collection
The characteristic that one-tenth degree is relatively low, does not possess array and uses condition for array.
Having been provided with the diode of low parasitic parameter, cut-off frequency exceedance THz at present, this technology can be supported
Complete the design of Terahertz integrated mixing frequency multiplier circuit.It addition, GaAs substrate dielectric constant is 13, radio signal transmission has greatly
Loss, Medium Wave Guide field will be formed in a substrate without less than 10um, it is difficult to realize microstrip line transmission, it more difficult to realize
RF is low damages transmission, and performance will be by extreme influence.
Summary of the invention
The present invention is for overcoming above-mentioned technological deficiency, it is provided that a kind of based on the thick substrate integrated Dan Ping of Schottky diode CPW
Weighing apparatus frequency mixer, in conjunction with GaAs Schottky diode and the advantage of integrated circuit, under the conditions of GaAs thick substrate, in order to avoid height
Radio frequency transmission loss and Medium Wave Guide field, increase intermediate-frequency bandwidth, proposes to balance fundamental wave mixing based on thick GaAs substrate CPW mode
Circuit structure, can operate with the relevant detection of Terahertz.
Technical scheme is as follows:
It is a kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW, it is characterised in that: include input and output GSG
Probe (GSG probe is the transmission probe that ground-signal-ground is distributed, and the signal of standard is burst into output on probe platform), radio frequency
High frequency short circuit secter pat and intermediate frequency lc circuit, input and output at local oscillator coupling, two independent Schottky diodes, intermediate frequencies
High frequency short circuit secter pat and intermediate frequency LC electricity at GSG probe, RF local oscillator coupling, two independent Schottky diodes, intermediate frequencies
All being connected by transmission line between road, transmission line is coplanar waveguide transmission line CPW, for reducing substrate thickness requirement.
The described substrate used based on the thick substrate integrated single balance mixer of Schottky diode CPW is that thickness is more than
The thick substrate of 200um.
Described intermediate frequency lc circuit be wave filter and intermediate frequency coupling use simultaneously.
Described broadband property based on the thick substrate integrated single balance mixer of Schottky diode CPW is applicable to fixed intermediate frequency,
Scanning local oscillator and radio frequency simultaneously, bandwidth ratio can be more than 2/7(=bandwidth/mid frequency=f BW /f 0).
Described specific works principle based on the thick substrate integrated single balance mixer of Schottky diode CPW and each several part it
Between function be described as follows by signal sequence:
1, the GSG probe of radio frequency and local oscillator GSG:RF input and LO input is used for bursting into Terahertz local oscillator and radiofrequency signal；
2, Lange coupler: this circuit is first-harmonic circuit, it is possible to achieve zero intermediate frequency, so RF and LO frequency phase-difference in principle
Can be the least, in order to avoid input signal RF and LO interfere, after GSG respectively bursts signal, it is one through Part II
Individual Lange bonder, it act as improving RF and LO isolation and being burst by signal into two diode branch respectively, finally real
Existing singly balanced and differential configuration；
3, Match: after Lange coupler, signal can pour in matching network respectively, and this network mainly realizes two big merits
Can, first, coupling input RF and LO signal, reduces signal waste；Second, matching network comprises a ground connection half-wavelength branch
Line, is used for being mixed DC loop ground connection；
4, Schottky diode: Schottky diode is mixting circuit core devices, signal is burst into Schottky two from matching network
In the pipe of pole, realized the function of fundamental wave mixing plus-minus by the strong nonlinearity effect of frequency mixer；
5, LO&2LO Sector: after diode mixing effect, signal divide into LO and RF each harmonic and (includes first-harmonic
Signal) and mixing after IF signal, in order to realize the isolation of double branch road, in the diode between insert the fan-shaped minor matters of short circuit, should
The fan-shaped minor matters of short circuit are to realize the short circuit of LO and 2LO biobelt by CPW；
6, IF filter& IF match: after diode is mixed, LO and 2LO are shorted fan-shaped minor matters short circuit, and IF signal is then
Burst into GSG by IF filtering and match circuit structure, complete the transmission of whole circuit signal.This circuit maximum feature is to utilize LC to filter
Wave structure, simplifies intermediate-frequency circuit；
7, on circuit layout, in order to avoid CPW parity modes changes, at a certain distance at (20 ~ 30um) and structure change
All there is air bridges.
In foregoing description, RF input is radio frequency input, and LO input is local oscillator input, and Lange Coupler is bright lattice
Bonder, Schottky diode is Schottky diode, and Match is matching section, and IF filter&IF match is intermediate frequency filter
Ripple mates, and IF input is intermediate frequency output, and Sector is the fan-shaped minor matters of short circuit.
The present invention utilizes Lange bonder to realize based on 90 ° of balanced structure fundamental wave mixings replacement Dan Ping of GaAs Schottky diode
Weighing apparatus structure, changes to two-way from conventional single channel mixting circuit, improves frequency mixer work quality；Utilize the CPW structure of integrated circuit,
Gap size (GaP is gap between CPW holding wire and ground) in the fan-shaped size of regulation and CPW, it is achieved dual-passband short circuit, in work
As frequency range it isf LOIn the case of, can first-harmonic and second harmonic be suppressed, this branch line single to microstrip circuitry simultaneously
Realize being difficulty with when first-harmonic and second harmonic short circuit simultaneously；Utilize in integrated circuit, can punch and realize double-level-metal
Characteristic (CPW walks coating metal, and second layer metal is positioned at below 0.5um, just can use time the most special), is utilizing the second layer
Metal and the little thickness of first layer metal, can realize electric capacity easily, thus utilize LC resonant element to realize undersized low pass filtered
Ripple device function；This circuit have employed air bridges in a large number and GND interconnection and the lower metal of CPW crossed CPW, it is achieved Lange coupling
Clutch and low-pass filter capacitance etc..
Beneficial effects of the present invention is as follows:
1, the mixting circuit structure of employing CPW can avoid complicated thinning work for the thick substrate of the such high-k of GaAs
The complexity that skill and minimizing are installed；
2, use self-developing technique, IC design, compare separation assembly and can improve design flexibility；
3, employing CPW sector branch, can obtain the biobelt short-circuit structure of first-harmonic and harmonic wave, by contrast, current thin film microstrip
Circuit is difficulty with；
4, utilize the most close metal of bilayer, can design short and small intermediate frequency filtering match circuit (thickness < 0.5um), and discrete group
Part is difficult to control to area, and this is to array detection unfavorable.
Accompanying drawing explanation
Fig. 1 is the theory diagram of the present invention；
Fig. 2 is the circuit arrangement map of the present invention；
Fig. 3 is two-metal layer process flowage structure schematic diagram in the specific embodiment of the invention.
Detailed description of the invention
As it is shown in figure 1, one is based on the thick substrate integrated single balance mixer of Schottky diode CPW, including input and output
High frequency short circuit secter pat and intermediate frequency LC electricity at GSG probe, RF local oscillator coupling, two independent Schottky diodes, intermediate frequencies
Road, input and output GSG probe, RF local oscillator coupling, at two independent Schottky diodes, intermediate frequencies high frequency short circuit secter pat with
And all connected by transmission line between intermediate frequency lc circuit, transmission line is CPW.
The described substrate used based on GaAs Schottky diode 90 ° balance fundamental mixer CPW integrated circuit is thickness
Thick substrate more than 200um.
Described intermediate frequency lc circuit be wave filter and intermediate frequency coupling use simultaneously.
Described broadband property based on GaAs Schottky diode 90 ° balance fundamental mixer CPW integrated circuit is applicable to solid
Determine intermediate frequency, simultaneously scanning local oscillator and radio frequency, bandwidth ratio can be more than 2/7(=bandwidth/mid frequency=f BW /f 0).
According to Fig. 1, F input is radio frequency input, and LO input is local oscillator input, and Lange Coupler is bright lattice
Bonder, Schottky diode is Schottky diode, and Match is matching section, and IF filter&IF match is intermediate frequency filter
Ripple mates, and IF input is intermediate frequency output, and Sector is the fan-shaped minor matters of short circuit.Described flat based on GaAs Schottky diode 90 °
Function between specific works principle and each several part of weighing apparatus fundamental mixer CPW integrated circuit is described as follows by signal sequence:
1, the GSG probe of radio frequency and local oscillator GSG:RF input and LO input is used for bursting into Terahertz local oscillator and radiofrequency signal；
2, Lange coupler: this circuit is first-harmonic circuit, it is possible to achieve zero intermediate frequency, so RF and LO frequency phase-difference in principle
Can be the least, in order to avoid input signal RF and LO interfere, after GSG respectively bursts signal, it is one through Part II
Individual Lange bonder, it act as improving RF and LO isolation and being burst by signal into two diode branch respectively, finally real
Existing singly balanced and differential configuration；
3, Match: after Lange coupler, signal can pour in matching network respectively, and this network mainly realizes two big merits
Can, first, coupling input RF and LO signal, reduces signal waste；Second, matching network comprises a ground connection half-wavelength branch
Line, is used for being mixed DC loop ground connection；
4, Schottky diode: Schottky diode is mixting circuit core devices, and signal is burst into Schottky from matching network
In diode, realized the function of fundamental wave mixing plus-minus by the strong nonlinearity effect of frequency mixer；
5, LO&2LO Sector: after diode mixing effect, signal divide into LO and RF each harmonic and (includes first-harmonic
Signal) and mixing after IF signal, in order to realize the isolation of double branch road, in the diode between insert the fan-shaped minor matters of short circuit, should
The fan-shaped minor matters of short circuit are to realize the short circuit of LO and 2LO biobelt by CPW；
6, IF filtering and match circuit: after diode is mixed, LO and 2LO is shorted fan-shaped minor matters short circuit, and IF signal then leads to
Cross IF filtering and match circuit structure is burst into GSG, complete the transmission of whole circuit signal.This circuit maximum feature is to utilize LC to filter
Structure, simplifies intermediate-frequency circuit；
7, circuit layout as in figure 2 it is shown, in order to avoid CPW parity modes change, (20 ~ 30um) and structure at a certain distance
Air bridges is all had at change.
The present invention utilizes Lange bonder to realize based on the 90 ° of balanced structure fundamental wave mixings replacements of GaAs Schottky diode
Single-balanced structure, changes to two-way from conventional single channel mixting circuit, improves frequency mixer work quality；Utilize the CPW of integrated circuit
Structure, the Gap size in the fan-shaped size of regulation and CPW, it is achieved dual-passband short circuit, at working frequency range bef LOIn the case of, permissible
Suppressing first-harmonic and second harmonic, this branch line single to microstrip circuitry realizes first-harmonic simultaneously and second harmonic is short simultaneously
It is difficulty with during road；Utilizing in integrated circuit, can punch realizes the characteristic of double-level-metal (CPW walks coating metal, the second layer
Metal is positioned at below 0.5um, just can use time the most special), utilizing second layer metal and the little thickness of first layer metal, can
To realize electric capacity easily, thus LC resonant element is utilized to realize undersized functions of low-pass filter；This circuit have employed in a large number
Air bridges is interconnected by the GND of CPW and lower metal crosses CPW, it is achieved Lange bonder and low-pass filter capacitance etc.,
These all have employed two-metal layer process flow process, its flow process and structural representation, as shown in Figure 3.
Claims (6)
1. one kind based on the thick substrate integrated single balance mixer of Schottky diode CPW, it is characterised in that: include input and output
High frequency short circuit secter pat and intermediate frequency LC electricity at GSG probe, RF local oscillator coupling, two independent Schottky diodes, intermediate frequencies
Road, input and output GSG probe, RF local oscillator coupling, at two independent Schottky diodes, intermediate frequencies high frequency short circuit secter pat with
And all connected by transmission line between intermediate frequency lc circuit, transmission line is CPW.
One the most according to claim 1 is based on the thick substrate integrated single balance mixer of Schottky diode CPW, its feature
It is: the substrate of employing is the thick substrate that thickness is more than 200um.
One the most according to claim 1 is based on the thick substrate integrated single balance mixer of Schottky diode CPW, its feature
Be: described intermediate frequency lc circuit be wave filter and intermediate frequency coupling use simultaneously.
One the most according to claim 1 is based on the thick substrate integrated single balance mixer of Schottky diode CPW, its feature
It is: the bandwidth ratio of described integrated circuit is more than 2/7.
One the most according to claim 1 is based on the thick substrate integrated single balance mixer of Schottky diode CPW, its feature
It is that operation principle is as follows:
(1) the GSG probe of RF input and LO input is used for bursting into Terahertz local oscillator and radiofrequency signal；
(2) after signal burst by input and output GSG probe respectively, through the Lange bonder for improving RF and LO isolation,
Signal is burst respectively into the branch road to two with Schottky diode and matching network, it is achieved singly balanced and differential configuration；
(3) signal pours in matching network respectively, comprises a ground connection half-wavelength branch line, be used for being mixed in described matching network
DC loop ground connection；
(4) signal is burst Schottky diode from matching network, is realized the merit of fundamental wave mixing plus-minus by strong nonlinearity effect
Energy；
(5), after by Schottky diode mixing effect, signal divide into the IF signal after LO and RF each harmonic and mixing,
In order to realize the isolation of double branch road, inserting fan-shaped minor matters in the middle of Schottky diode, described fan-shaped minor matters realize LO by CPW
With the short circuit of 2LO biobelt；
(6) after Schottky diode is mixed, LO and 2LO is by fan-shaped minor matters short circuit, and IF signal is then filtered by IF and mates
Circuit structure is burst into GSG probe, completes the transmission of whole circuit signal.
A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW, its
It is characterised by: in described circuit, is then provided with air bridges every 20 30um, be the most then also equipped with air at structure change
Bridge.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610713184.5A CN106301230B (en) | 2016-08-24 | 2016-08-24 | One kind integrating single balance mixer based on thick substrate Schottky diode CPW |
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| CN201610713184.5A CN106301230B (en) | 2016-08-24 | 2016-08-24 | One kind integrating single balance mixer based on thick substrate Schottky diode CPW |
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| CN106301230B CN106301230B (en) | 2019-04-19 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107196608A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of new integrated th harmonic mixer of Terahertz frequency range Band Monolithic Integrated |
| CN108512519A (en) * | 2018-04-02 | 2018-09-07 | 中国工程物理研究院电子工程研究所 | A kind of bandpass filter chip circuit that highly selective high stop band inhibits |
| WO2018226464A1 (en) * | 2017-06-07 | 2018-12-13 | Raytheon Company | Shielded microwave transmission lines |
| CN111987994A (en) * | 2019-05-23 | 2020-11-24 | 中国工程物理研究院电子工程研究所 | High-performance miniaturized monolithic integrated harmonic mixer |
| CN112230297A (en) * | 2020-09-03 | 2021-01-15 | 广东工业大学 | Detector based on NxM multi-frequency antenna array and SBD array |
| CN112284532A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | SBD detector based on NxM multi-frequency terahertz antenna array |
| CN112284526A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | NxM terahertz detector array imaging system based on multi-frequency antenna structure |
| CN114123980A (en) * | 2022-01-27 | 2022-03-01 | 电子科技大学 | Terahertz low-noise communication system transceiving front end based on GaAs monolithic integration |
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Cited By (15)
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|---|---|---|---|---|
| CN107196608B (en) * | 2017-05-27 | 2020-08-07 | 中国电子科技集团公司第四十一研究所 | Novel terahertz frequency band broadband monolithic integration subharmonic mixer |
| CN107196608A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of new integrated th harmonic mixer of Terahertz frequency range Band Monolithic Integrated |
| WO2018226464A1 (en) * | 2017-06-07 | 2018-12-13 | Raytheon Company | Shielded microwave transmission lines |
| US10218045B2 (en) | 2017-06-07 | 2019-02-26 | Raytheon Company | Serially connected transmission line sections each having a conductive shield member overlying a portion of a strip conductor |
| CN108512519A (en) * | 2018-04-02 | 2018-09-07 | 中国工程物理研究院电子工程研究所 | A kind of bandpass filter chip circuit that highly selective high stop band inhibits |
| CN111987994B (en) * | 2019-05-23 | 2023-12-01 | 中国工程物理研究院电子工程研究所 | High-performance miniaturized monolithic integrated harmonic mixer |
| CN111987994A (en) * | 2019-05-23 | 2020-11-24 | 中国工程物理研究院电子工程研究所 | High-performance miniaturized monolithic integrated harmonic mixer |
| CN112230297A (en) * | 2020-09-03 | 2021-01-15 | 广东工业大学 | Detector based on NxM multi-frequency antenna array and SBD array |
| CN112284526A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | NxM terahertz detector array imaging system based on multi-frequency antenna structure |
| CN112284526B (en) * | 2020-09-03 | 2023-10-03 | 广东工业大学 | N X M terahertz detector array imaging system based on multi-frequency antenna structure |
| CN112284532B (en) * | 2020-09-03 | 2023-10-03 | 广东工业大学 | SBD detector based on N×M multi-frequency terahertz antenna array |
| CN112284532A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | SBD detector based on NxM multi-frequency terahertz antenna array |
| CN112230297B (en) * | 2020-09-03 | 2024-04-09 | 广东工业大学 | Detector based on N×M multi-frequency antenna array and SBD array |
| CN114123980A (en) * | 2022-01-27 | 2022-03-01 | 电子科技大学 | Terahertz low-noise communication system transceiving front end based on GaAs monolithic integration |
| CN114123980B (en) * | 2022-01-27 | 2022-05-03 | 电子科技大学 | Terahertz low-noise communication system transceiving front end based on GaAs monolithic integration |
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