CN112230297A - Detector based on NxM multi-frequency antenna array and SBD array - Google Patents
Detector based on NxM multi-frequency antenna array and SBD array Download PDFInfo
- Publication number
- CN112230297A CN112230297A CN202010917423.5A CN202010917423A CN112230297A CN 112230297 A CN112230297 A CN 112230297A CN 202010917423 A CN202010917423 A CN 202010917423A CN 112230297 A CN112230297 A CN 112230297A
- Authority
- CN
- China
- Prior art keywords
- nxm
- array
- schottky diode
- detector
- terahertz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 claims description 33
- 238000012360 testing method Methods 0.000 claims description 30
- 230000000903 blocking effect Effects 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 5
- 101100191136 Arabidopsis thaliana PCMP-A2 gene Proteins 0.000 claims description 3
- 101100048260 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) UBX2 gene Proteins 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 22
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 239000003574 free electron Substances 0.000 abstract description 3
- 238000011161 development Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
- H01Q5/28—Arrangements for establishing polarisation or beam width over two or more different wavebands
Landscapes
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Geophysics (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention discloses a detector based on an NxM multi-frequency antenna array and an SBD array, which can further improve the detection sensitivity by replacing a single Schottky diode used for detection in the traditional detector with the NxM Schottky diode array. In addition, by replacing a single terahertz antenna used for receiving terahertz signals in the traditional detector with an NxM terahertz antenna array, the energy of low-kinetic-energy electrons in the antenna can be enhanced by utilizing the resonance of terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved again. In addition, the multi-frequency point terahertz antenna with any different frequency points can be designed according to actual requirements, so that one detector can support detection of a plurality of any different frequency points without replacing a terahertz detector, and the cost of terahertz detection is effectively reduced.
Description
Technical Field
The invention relates to the technical field of terahertz detectors, in particular to a detector based on an NxM multi-frequency antenna array and an SBD array.
Background
Terahertz has a wide application prospect, and has wide technical application in the fields of astrophysics, material science, biomedicine, environmental science, spectrum and imaging technology, information science and technology and the like. The terahertz technology can remarkably improve the strength of China in the aspects of aerospace, space communication, biomedical treatment, even food detection and the like. The terahertz detector serving as a terahertz application basis is a key component and an instrument for terahertz security and detection. Therefore, the development of a high-performance terahertz detector is crucial to the application and development of terahertz technology.
Schottky diodes have the advantages of high speed, good nonlinear effect, capability of working at normal temperature, easy integration and the like, and are often used as detector diodes in terahertz detectors. The traditional terahertz detector based on the schottky diode generally adopts a structure of a single-frequency point terahertz antenna and a single SBD. At present, the power of a terahertz radiation source is generally small, and the frequency points of the radiation source are discontinuous. Therefore, a single-frequency-point terahertz antenna is adopted to receive terahertz signals, which is likely to result in unsatisfactory detection effect and incapability of meeting actual requirements of detection at different frequency points. Also, detection with a single SBD may not detect a valid signal due to weak detection signals. Therefore, the development of detectors based on multi-frequency point terahertz antenna arrays and SBD arrays is a problem which needs to be solved urgently at present.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a detector based on an NxM multi-frequency antenna array and an SBD array, which has high sensitivity, multiple frequency points and low cost.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
the detector based on the NxM multi-frequency antenna array and the SBD array comprises the NxM multi-frequency point terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a detector and reading circuit test switch, a reading circuit and an NxM Schottky diode array;
the transmission line TL1 in the matching network is connected with an NxM multi-frequency point terahertz antenna array, the right end of the transmission line TL2 is connected with an NxM Schottky diode array, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit;
the other end of the dc blocking capacitor C1 is grounded.
Furthermore, the N × M schottky diode array includes N × M schottky diode units arranged in a cross-bar manner, N first row selection switches, and M first column selection switches;
each Schottky diode cell comprises a Schottky diode, a bias voltage Vb1, a bias resistor Rb1 and a first NMOSFET;
in each Schottky diode unit, an anode of the Schottky diode is respectively connected with one end of the bias resistor Rb1 and the M of the first NMOSFETSEL1The end is connected, and the cathode of the Schottky diode is grounded; the other end of the bias resistor Rb1 is connected with a bias voltage Vb1 and used for supplying power to the Schottky diode;
the SEL1 end of the first NMOSFET in each Schottky diode unit is connected with the first column selection switch of the column;
v of first NMOSFET in each Schottky diode unitout1The ends are all connected with the first row selection switch of the row.
Further, the matching network adopts a grounded coplanar waveguide transmission line.
Furthermore, the nxm multi-frequency point terahertz antenna array comprises nxm multi-frequency point terahertz antenna units, N second row selection switches and M second column selection switches;
each NxM multi-frequency point terahertz antenna unit comprises a multi-frequency point terahertz antenna and a second NMOSFET;
m of multi-frequency point terahertz antenna and second NMOSFET in each NxM multi-frequency point terahertz antenna unitSELThe SEL terminals of the second NMOSFETs are connected with the second column selection switch of the column in which the SEL terminals of the second NMOSFETs are connectedoutThe ends are all connected with the second row selection switch of the row.
Further, the port impedance of the nxm multi-frequency point terahertz antenna array is consistent with the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is consistent with the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is consistent with the port impedance of the nxm schottky diode array.
Further, the readout circuit comprises a low-noise chopper amplifier and a high-resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces the offset and 1/f noise of the amplifier by using a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
Further, the probe and readout circuit test switches include a probe test switch S1 and a readout circuit test switch S2; the prober test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively.
Compared with the prior art, the principle and the advantages of the scheme are as follows:
1. the detection sensitivity can be further improved by replacing the single schottky diode used for detection in the conventional detector with an N × M schottky diode array.
2. By replacing a single terahertz antenna used for receiving terahertz signals in the traditional detector with an NxM terahertz antenna array, the energy of low-kinetic-energy electrons in the antenna can be enhanced by utilizing the resonance generated between terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved.
3. The single-frequency point terahertz antenna used for receiving terahertz signals in the traditional detector is replaced by the multi-frequency point terahertz antenna (the bandwidth of each frequency point can be designed into a narrow band according to actual requirements), so that one detector can support detection of any plurality of different frequency points. The traditional detector aims at the detection of different frequency points, the detector of different frequency points needs to be replaced, the scheme can design the multi-frequency-point terahertz antenna of any different frequency points according to actual requirements, so that the detection of a plurality of any different frequency points supported by one detector can be realized under the condition that the terahertz detector is not needed to be replaced, and the cost of terahertz detection is effectively reduced.
4. The detector and the reading circuit test switch are introduced, so that the detector unit and the reading circuit can be tested when the circuit fails, and the reason and the position of the specific circuit failure can be found out quickly.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the services required for the embodiments or the technical solutions in the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a detector based on an nxm multi-frequency antenna array and an SBD array according to the present invention.
Detailed Description
The invention will be further illustrated with reference to specific examples:
as shown in fig. 1, the detector based on the N × M multi-frequency antenna array and the SBD array comprises an N × M multi-frequency point terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a dc blocking capacitor C1, a detector and readout circuit test switch, a readout circuit, and an N × M schottky diode array.
The matching network adopts a grounded coplanar waveguide (GCPW) transmission line, the transmission line TL1 is connected with the NxM multi-frequency-point terahertz antenna array, the right end of the transmission line TL2 is connected with the NxM Schottky diode array, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit; the other end of the dc blocking capacitor C1 is grounded.
Specifically, the nxm multi-frequency point terahertz antenna array comprises nxm multi-frequency point terahertz antenna units (D11, D12, D13, …, DNM), N second Row selection switches (Row1, Row2, Row3, …, Row N) and M second Column selection switches (Column1, Column2, Column3, …, Column nm); each NxM multi-frequency point terahertz antenna unit comprises a multi-frequency point terahertz antenna and a second NMOSFET; in each NxM multi-frequency-point terahertz antenna unit, the multi-frequency-point terahertz antenna is connected with the MSEL end of a second NMOSFET, the SEL end of the second NMOSFET is connected with a second column selection switch of the column, and the Vout end of the second NMOSFET is connected with a second row selection switch of the row.
The port impedance of the nxm multi-frequency point terahertz antenna array is consistent with the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is consistent with the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is consistent with the port impedance of the nxm schottky diode array.
Specifically, the nxm schottky diode array includes nxm schottky diode units (E11, E12, E13, …, ENM) arranged in a row and column, N first row selection switches (row1, row2, row3, …, row N), and M first column selection switches (column1, column2, column3, …, column nm); each Schottky diode cell comprises a Schottky diode, a bias voltage Vb1, a bias resistor Rb1 and a first NMOSFET; in each Schottky diode unit, an anode of the Schottky diode is respectively connected with one end of the bias resistor Rb1 and the M of the first NMOSFETSEL1The end is connected, and the cathode of the Schottky diode is grounded; the other end of the bias resistor Rb1 is connected with a bias voltage Vb1 and used for supplying power to the Schottky diode; the SEL1 end of the first NMOSFET in each Schottky diode unit is connected with the first column selection switch of the column; v of first NMOSFET in each Schottky diode unitout1The ends are all connected with the first row selection switch of the row.
Specifically, the readout circuit comprises a low-noise chopper amplifier and a high-resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces the offset and 1/f noise of the amplifier by using a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
The probe and readout circuit test switches include a probe test switch S1 and a readout circuit test switch S2; the prober test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively. The method is mainly convenient for respectively testing the detector and the reading circuit in the circuit fault process so as to determine the specific fault reason and position.
In this embodiment, the specific working process of the detector based on the nxm multi-frequency antenna array and the SBD array is as follows:
when a second Row selection switch and a second Column selection switch of the NxM multi-frequency point terahertz antenna array are closed, a first Row selection switch and a first Column selection switch of the NxM Schottky diode array are closed (such as a Row selection switch (Row2 and Row2) and a Column selection switch (Column2 and Column 2)), a detector test switch S1 is opened, and a reading circuit test switch S2 is opened, a terahertz signal received by a detector is amplified by a chopper amplifier, enters a high-resolution analog-to-digital converter for digital processing, and then enters a D-mode digital converter for digital processingoutAnd outputting;
when a second Row selection switch and a second Column selection switch of the NxM multi-frequency point terahertz antenna array are closed, a first Row selection switch and a first Column selection switch of the NxM Schottky diode array are closed (such as a Row selection switch (Row3 and Row3) and a Column selection switch (Column3 and Column3) are closed), a detector test switch S1 is closed, and a reading circuit test switch S2 is opened, a detector performance test is carried out, if a terahertz signal can be received, the detector works normally, and otherwise, the detector works in a fault;
when a second row selection switch and a second column selection switch of the NxM multi-frequency point terahertz antenna array and a first row selection switch and a first column selection switch of the NxM Schottky diode array are all disconnected, a detector test switch S1 is disconnected, and a reading circuit test switch S2 is closed, performing a reading circuit performance test, if D is detected to be in a state of being switched off, and if D is detected to be in a state of being switched off, switching off the detector test switch S1, switching off theoutThe signal which is output normally and is processed by the high-resolution analog-to-digital converter in a digital mode indicates that the reading circuit works normally, otherwise, the reading circuit works in a fault mode.
The present embodiment can further improve the detection sensitivity by replacing the single schottky diode used for detection in the conventional detector with an N × M schottky diode array. In addition, by replacing a single terahertz antenna used for receiving terahertz signals in the traditional detector with an NxM terahertz antenna array, the energy of low-kinetic-energy electrons in the antenna can be enhanced by utilizing the resonance of terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved again. Still what be, this embodiment can design the multi-frequency point terahertz antenna of arbitrary different frequency points according to actual demand to can realize that a detector supports the detection of a plurality of arbitrary different frequency points under the condition of need not changing terahertz detector, effectively reduce terahertz and survey the cost.
The above-mentioned embodiments are merely preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, so that variations based on the shape and principle of the present invention should be covered within the scope of the present invention.
Claims (7)
1. The detector based on the NxM multi-frequency antenna array and the SBD array is characterized by comprising an NxM multi-frequency point terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a detector and reading circuit test switch, a reading circuit and an NxM Schottky diode array;
the transmission line TL1 in the matching network is connected with an NxM multi-frequency point terahertz antenna array, the right end of the transmission line TL2 is connected with an NxM Schottky diode array, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit;
the other end of the dc blocking capacitor C1 is grounded.
2. The nxm multi-frequency antenna array and SBD array based detector of claim 1, wherein the nxm schottky diode array comprises nxm crossbar schottky diode units, N first row selection switches, and M first column selection switches;
each Schottky diode cell comprises a Schottky diode, a bias voltage Vb1, a bias resistor Rb1 and a first NMOSFET;
in each Schottky diode unit, an anode of the Schottky diode is respectively connected with one end of the bias resistor Rb1 and the M of the first NMOSFETSEL1The end is connected, and the cathode of the Schottky diode is grounded; the other end of the bias resistor Rb1 is connected with a bias voltage Vb1 and used for supplying power to the Schottky diode;
the SEL1 end of the first NMOSFET in each Schottky diode unit is connected with the first column selection switch of the column;
v of first NMOSFET in each Schottky diode unitout1The ends are all connected with the first row selection switch of the row.
3. The nxm multi-frequency antenna array and SBD array based probe of claim 1, wherein the matching network employs grounded coplanar waveguide transmission lines.
4. The nxm multi-frequency antenna array and SBD array based detector of claim 1, wherein the nxm multi-frequency point terahertz antenna array comprises nxm multi-frequency point terahertz antenna elements, N second row selection switches and M second column selection switches;
each NxM multi-frequency point terahertz antenna unit comprises a multi-frequency point terahertz antenna and a second NMOSFET;
m of multi-frequency point terahertz antenna and second NMOSFET in each NxM multi-frequency point terahertz antenna unitSELThe SEL terminals of the second NMOSFETs are connected with the second column selection switch of the column in which the SEL terminals of the second NMOSFETs are connectedoutThe ends are all connected with the second row selection switch of the row.
5. The NxM multi-frequency antenna array and SBD array based detector of claim 1, wherein the port impedance of the NxM multi-frequency point terahertz antenna array is consistent with the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is consistent with the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is consistent with the port impedance of the NxM Schottky diode array.
6. The nxm multi-frequency antenna array and SBD array based detector of claim 1, wherein the readout circuitry comprises a low noise chopper amplifier and a high resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces the offset and 1/f noise of the amplifier by using a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
7. The nxm multi-frequency antenna array and SBD array based detector of claim 1, wherein the detector and readout circuitry test switches comprise a detector test switch S1 and a readout circuitry test switch S2; the prober test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010917423.5A CN112230297B (en) | 2020-09-03 | 2020-09-03 | Detector based on N×M multi-frequency antenna array and SBD array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010917423.5A CN112230297B (en) | 2020-09-03 | 2020-09-03 | Detector based on N×M multi-frequency antenna array and SBD array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112230297A true CN112230297A (en) | 2021-01-15 |
| CN112230297B CN112230297B (en) | 2024-04-09 |
Family
ID=74115894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010917423.5A Active CN112230297B (en) | 2020-09-03 | 2020-09-03 | Detector based on N×M multi-frequency antenna array and SBD array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112230297B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN106301230A (en) * | 2016-08-24 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW |
| CN109239787A (en) * | 2018-09-19 | 2019-01-18 | 天津大学 | A kind of terahertz wave detector based on array plaster antenna |
| CN109547717A (en) * | 2018-10-31 | 2019-03-29 | 中国科学院半导体研究所 | THz wave array image sensor chip |
| CN109556714A (en) * | 2018-10-31 | 2019-04-02 | 中国科学院半导体研究所 | Terahertz light spectrum chip |
| CN109556711A (en) * | 2018-10-18 | 2019-04-02 | 天津大学 | It is a kind of based on parallel connection to the field effect transistor terahertz detector of pipe structure |
| US20190234870A1 (en) * | 2017-12-29 | 2019-08-01 | Nuctech Company Limited | Terahertz detector |
| CN110381271A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | N × M rasterizes detector array based on the MOSFET grid of Meta Materials |
| CN110380186A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on N × M DRA array and N × M NMOSFET array |
-
2020
- 2020-09-03 CN CN202010917423.5A patent/CN112230297B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN106301230A (en) * | 2016-08-24 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW |
| US20190234870A1 (en) * | 2017-12-29 | 2019-08-01 | Nuctech Company Limited | Terahertz detector |
| CN109239787A (en) * | 2018-09-19 | 2019-01-18 | 天津大学 | A kind of terahertz wave detector based on array plaster antenna |
| CN109556711A (en) * | 2018-10-18 | 2019-04-02 | 天津大学 | It is a kind of based on parallel connection to the field effect transistor terahertz detector of pipe structure |
| CN109547717A (en) * | 2018-10-31 | 2019-03-29 | 中国科学院半导体研究所 | THz wave array image sensor chip |
| CN109556714A (en) * | 2018-10-31 | 2019-04-02 | 中国科学院半导体研究所 | Terahertz light spectrum chip |
| CN110381271A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | N × M rasterizes detector array based on the MOSFET grid of Meta Materials |
| CN110380186A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on N × M DRA array and N × M NMOSFET array |
Non-Patent Citations (1)
| Title |
|---|
| 张玉平等: "太赫兹新型探测器的研究进展及应用", 红外与毫米波学报, vol. 39, no. 2, 15 April 2020 (2020-04-15), pages 191 - 207 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112230297B (en) | 2024-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Al Hadi et al. | A terahertz detector array in a SiGe HBT technology | |
| JP2008524855A (en) | Carbon nanotube device and manufacturing method thereof | |
| Varonen et al. | A 75–116-GHz LNA with 23-K noise temperature at 108 GHz | |
| Gu et al. | A D-band passive imager in 65 nm CMOS | |
| Giannakopoulos et al. | Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth | |
| CN109556714A (en) | Terahertz light spectrum chip | |
| Andree et al. | A broadband dual-polarized terahertz direct detector in a 0.13-μm SiGe HBT technology | |
| Hillger et al. | A 128-pixel 0.56 THz sensing array for real-time near-field imaging in 0.13 μm SiGe BiCMOS | |
| Han et al. | 280-GHz Schottky diode detector in 130-nm digital CMOS | |
| CN112230297A (en) | Detector based on NxM multi-frequency antenna array and SBD array | |
| Tomkins et al. | A passive W-band imager in 65nm bulk CMOS | |
| Tessmann et al. | Fully integrated 300 GHz receiver S-MMICs in 50 nm metamorphic HEMT technology | |
| Kallfass et al. | A 200 GHz monolithic integrated power amplifier in metamorphic HEMT technology | |
| Baringer et al. | 3-bit, 8 GSPS flash ADC | |
| CN112268616A (en) | NxM terahertz detector array imaging system based on Schottky contact grating structure | |
| Prokopenko et al. | SQIF antenna measurement in near field | |
| CN109405860B (en) | Germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching | |
| CN112284532B (en) | SBD detector based on N×M multi-frequency terahertz antenna array | |
| CN112284526B (en) | N X M terahertz detector array imaging system based on multi-frequency antenna structure | |
| CN113125846A (en) | Weak current measuring system | |
| CN112229512A (en) | Terahertz detector based on NxM Schottky diode array | |
| CN207475555U (en) | A kind of ultra wide band multichannel optoelectronic integration detector for microwave photon system | |
| WO2023097941A1 (en) | Power measurement circuit, power amplifier module, and radio-frequency front-end architecture | |
| Liebchen et al. | Compact 12× 12-pixel THz camera using AlGaN/GaN HEMT technology operating at room temperature | |
| CN101126776A (en) | Broad band and high resolution ratio millimeter wave and sub millimeter wave signal detecting method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |