CN110381271A - N × M rasterizes detector array based on the MOSFET grid of Meta Materials - Google Patents
N × M rasterizes detector array based on the MOSFET grid of Meta Materials Download PDFInfo
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Abstract
The present invention discloses N × M and rasterizes detector array based on the MOSFET grid of Meta Materials, N × M is connected based on the metal gate MOSFET grid grating terahertz detector array of Meta Materials with first capacitance one end, the first capacitance other end is connected with second biasing resistor one end, the second biasing resistor other end is connected with the second bias voltage, the first capacitance other end and second biasing resistor one end are connected with the anode of low-noise preamplifier simultaneously, first resistor both ends are connected with the cathode of low-noise preamplifier and output end respectively, one end of first resistor is also connected with second resistance one end, the second resistance other end is connected with second capacitance one end, second capacitance other end ground connection, one end of first resistor is also connected with third capacitance one end, another termination of third capacitance Ground.Compared with the prior art, technical solution of the present invention has many advantages, such as that integrated level height, fast response time, the sensitive and imaging resolution of detection are high.
Description
Technical field
The present invention relates to terahertz detector field, in particular to N × M rasterizes battle array based on the MOSFET grid of Meta Materials
Row detector.
Background technique
THz wave is between microwave and infrared light, frequency range is from 0.1THz to 10THz, in recent years in electromagnetic spectrum
Carry out the rapid development with terahertz emission source and terahertz detection technology, Terahertz Technology also causes people's extensive concern therewith
And research.It is implemented as since terahertz emission can penetrate opaque to the visible light nonmetallic, apolar substance of the overwhelming majority
Picture, and its photon energy is lower to cause to damage to organism, and these unique advantage characteristics make THz imaging technology
There can be broad prospect of application in fields such as public safety, non-destructive testings.
In addition to this, since THz wave has the characteristics that fearing aqueous, spectrally resolved and carrying contains much information, and makes terahertz
Hereby imaging technique can have important purposes and application in fields such as biologic medical, illicit drugs inspection, wireless communication, satellite communications
Value.
As the basic demand of Terahertz Technology development, one of key areas that Terahertz Technology extends is terahertz
Hereby detection and imaging technique, and existing terahertz detection and the generally existing response speed of imaging technique are slow at present, it is sensitive to detect
The problems such as low, single pixel detection imaging resolution ratio is low is spent, this largely limits terahertz detection and the integrated of imaging technique is answered
With with development.
Currently, the HEMT based on rasterisation grid, which carries out terahertz detection, has proved to be very practical, but due to
HEMT technique and CMOS technology it is incompatible and based on single pixel HEMT detection imaging resolution ratio it is lower, therefore in practical application
In, the back-end circuits such as the reading circuit of terahertz detector and signal processing circuit require to realize using CMOS substantially, however
High-resolution imaging performance is the important indicator that people pursue.Therefore the development trend of terahertz detection and imaging technique
It is high-responsivity, high sensitivity, high integration and high-resolution, develops the room temperature terahertz detector based on CMOS compatible technology
Array and THz source are terahertz detection and imaging to realize fully integrated, the high-responsivity, high sensitivity, high-resolution of low cost
The imaging performance of rate is current research hotspot.
Summary of the invention
The main object of the present invention is to propose that a kind of integrated level height, fast response time, to detect sensitive and imaging resolution high
N × M based on Meta Materials MOSFET grid rasterize detector array, it is intended to solve the prior art terahertz detection and at
As the technical problem that response speed generally existing in technology is slow, detectivity is low, single pixel detection imaging resolution ratio is low.
To achieve the above object, N × M proposed by the present invention rasterizes array detection based on the MOSFET grid of Meta Materials
Device, the metal gate MOSFET grid grating terahertz detector array including N × M based on Meta Materials, N × M is based on Meta Materials
Metal gate MOSFET grid grating terahertz detector array is connected with first capacitance one end, the first capacitance other end
It is connected with second biasing resistor one end, the second biasing resistor other end is connected with the second bias voltage, and the first capacitance is another
End and second biasing resistor one end simultaneously be connected with the anode of low-noise preamplifier, first resistor both ends respectively with low noise
The cathode and output end of sound preamplifier are connected, and one end of first resistor is also connected with second resistance one end, second resistance
The other end is connected with second capacitance one end, the second capacitance other end ground connection, one end of first resistor also with third every
Straight capacitor one end is connected, third capacitance other end ground connection.
Preferably, metal gate MOSFET grid grating terahertz detector array of the N × M based on Meta Materials includes N
× M NMOSFET unit, each NMOSFET unit are connected with third biasing resistor simultaneously, and third biasing resistor is also inclined with third
Voltage is set to be connected.
Preferably, each NMOSFET unit includes the rasterisation gate structure of having based on Meta Materials and each
First metal gate MOSFET of kind different grating pattern forms, the first bias voltage, the first biasing resistor, do not rasterize second
Metal gate MOSFET；The grid of first metal gate MOSFET is connected with first biasing resistor one end, the first biasing resistor other end
It is connected with the first bias voltage, the source electrode ground connection of the first metal gate MOSFET, drain electrode and the second gold medal of the first metal gate MOSFET
The source electrode for belonging to gate MOSFET is connected, and the grid of the second metal gate MOSFET is connected with the end SEL, the drain electrode of the second metal gate MOSFET
It is connected with the end Vout.
Preferably, polysilicon gate NMOSFET substitution can be used in the second metal gate MOSFET.
Preferably, the grating of adjusting metal gate MOSFET grid is passed through by the first metal gate MOSFET of rasterisation
Change structural parameters and Meta Materials parameter to regulate and control the absorption frequency range and absorption intensity of corresponding THz wave.
Preferably, the rasterisation structural parameters include width, length, region area, the pattern form of grating；It is described super
Material parameter includes the structure and size of Meta Materials, thickness of dielectric layers, dielectric constant.
Preferably, the first metal gate MOSFET be based on Meta Materials have periodic gate structure and its
The metal gate MOSFET of various difference grating pattern forms.
Preferably, the first metal gate MOSFET be based on Meta Materials have aperiodicity rasterize gate structure and
The metal gate MOSFET of its various different grating pattern form.
Technical solution of the present invention has the advantage that compared with the prior art
N × M of technical solution of the present invention is based on silicon substrate based on the MOSFET grid rasterisation detector array of Meta Materials
CMOS technology, in this way can be low convenient for realizing with back-end circuits such as the reading circuit of terahertz detector array and signal processing circuits
Cost it is fully integrated, to be conducive to extensive mass volume production.And also structural parameters (such as grating can be rasterized by adjusting
Width, length, region area and pattern form) and Meta Materials parameter (structure and size of such as Meta Materials, thickness of dielectric layers
With the parameters such as dielectric constant) to regulate and control the absorption frequency range and absorption intensity of corresponding THz wave, realize terahertz detector battle array
It is listed in the expansion of terahertz wave band response range, the final detectivity for improving terahertz detector array and realization narrowband
(or even point frequency) terahertz detection.
At the same time, in each NMOSFET unit, there is rasterisation gate structure and its various differences based on Meta Materials
The parameter of rasterisation structural parameters and the Meta Materials of the metal gate MOSFET grid of grating pattern form can identical not yet
It is identical, to be adaptively adjusted according to actual detection needs.And by introducing terahertz detector array technology,
The quantity and scale of real work pixel unit select control switch and column selection control switch accurately to control and each pixel by row
Unit keeps working independently, be independent of each other, it can be achieved that high-resolution imaging performance.In addition it in each NMOSFET unit, is based on
The breadth length ratio W/L of rasterisation gate structure and its metal gate MOSFET of various different grating pattern forms that has of Meta Materials can
With it is identical can not also be identical, can be adjusted according to actual detection demand, the metal gate or polysilicon gate not rasterized
The breadth length ratio W/L of NMOSFET is usually identical, similar to the effect of switch.
Technical solution of the present invention may be implemented using the method for rasterisation metal gates to faint terahertz signal to be measured
Dimensional energy enhancing is carried out, to effectively detect terahertz signal.The terahertz detector that technical solution of the present invention proposes
The grid of metal gate MOSFET is the metal gate for periodically or non-periodically rasterizing structure based on Meta Materials in array, due to
The periodically or non-periodically rasterisation structure of metamaterial layer has the ability for fully absorbing corresponding frequency band THz wave, Terahertz
For detector array once the THz wave with corresponding frequency band generates resonance, resonance response speed belongs to ultrahigh speed response, terahertz
Hereby detector array can generate response signal in a very short period of time, to greatly improve terahertz detector array
Response speed.Furthermore technical solution of the present invention need not use antenna, can effectively avoid big on-chip antenna loss, gain and radiation effect
The problems such as rate is low, big by DRC design rule verification difficulty.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram that N × M of the present invention rasterizes detector array based on the MOSFET grid of Meta Materials；
Fig. 2 is the structure of metal gate MOSFET grid grating terahertz detector array of the N × M of the present invention based on Meta Materials
Schematic diagram；
Fig. 3 is two kinds of the present invention metal gates with periodic gate structure and different grating pattern forms
The structural schematic diagram of MOSFET；
Fig. 4 is the metal gate MOSFET that there is the present invention aperiodicity to rasterize gate structure and different grating pattern forms
Structural schematic diagram.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that if relating to directionality instruction (such as up, down, left, right, before and after ...) in the embodiment of the present invention,
Then directionality instruction be only used for explain under a certain particular pose (as shown in the picture) between each component relative positional relationship,
Motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, being somebody's turn to do " first ", " second " etc. if relating to the description of " first ", " second " etc. in the embodiment of the present invention
Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill
The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.It in addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution
Conjunction is not present, also not the present invention claims protection scope within.
The present invention proposes a kind of MOSFET grid rasterisation detector array of the N × M based on Meta Materials.
Referring to Figure 1, detector array is rasterized based on the MOSFET grid of Meta Materials in N × M of the embodiment of the present invention,
Specifically include metal gate MOSFET grid grating terahertz detector array of the N × M based on Meta Materials, the second bias voltage Vb2,
Second biasing resistor Rb2, the first capacitance C1, low-noise preamplifier and low-noise preamplifier Voltage Feedback return
Road.Specifically, metal gate MOSFET grid grating terahertz detector array and of the N × M of the present embodiment based on Meta Materials
One one end capacitance C1 is connected, and the first capacitance C1 other end is connected with second one end biasing resistor Rb2, the second biased electrical
The resistance Rb2 other end is connected with the second bias voltage Vb2, the first capacitance C1 other end and second one end biasing resistor Rb2
Simultaneously be connected with the anode of low-noise preamplifier, the both ends first resistor Rf respectively with the cathode of low-noise preamplifier with
And output end be connected, one end of first resistor Rf is also connected with the one end second resistance Rg, the second resistance Rg other end and second every
Straight one end capacitor C2 is connected, second capacitance C2 other end ground connection, one end of first resistor Rf also with third capacitance C3
One end is connected, third capacitance C3 other end ground connection.
As shown in Fig. 2, metal gate MOSFET grid grating terahertz detector array of the N × M based on Meta Materials include N ×
M NMOSFET unit (D11, D12, D13 ... DNM), that is to say laterally include N number of row select control switch (Row1,
Row2, Row3 ... RowN) and including longitudinally M column selection control switch (Column1, Column2, Column3 ...
ColumnM)；Each NMOSFET unit is connected with third biasing resistor Rb3 simultaneously, third biasing resistor Rb3 also with bias voltage
Vb3 is connected.
Preferably, each NMOSFET unit (such as D11) of the present embodiment includes the rasterisation grid of having based on Meta Materials
Left side the first metal gate MOSFET, the first bias voltage Vb1, the first biasing resistor of structure and various different grating pattern forms
Rb1, right side the second metal gate MOSFET not rasterized, in other embodiments, the second metal gate MOSFET not rasterized
Polysilicon gate NMOSFET can also be used to substitute.Specifically, the grid and the first biasing resistor of the first metal gate MOSFET in left side
The one end Rb1 is connected, and the first biasing resistor Rb1 other end is connected with the first bias voltage Vb1, the first metal gate MOSFET in left side
Source electrode M1 ground connection, the source electrode of the second metal gate MOSFET of the drain electrode and right side of the first metal gate MOSFET in left side is connected,
The grid of the second metal gate MOSFET on right side is connected with the end SEL, the drain electrode of the second metal gate MOSFET on right side and the end Vout
It is connected.
Fixed direct current the first bias voltage Vb1 and are loaded on grid by the first metal gate MOSFET of rasterisation
One biasing resistor Rb1 can be used for providing direct current supply to the first metal gate MOSFET of rasterisation.In addition the present embodiment can also lead to
Overregulate rasterisation structural parameters (such as width, length, region area and the pattern shape of grating of metal gate MOSFET grid
Formula) and the parameter (parameters such as structure and size, thickness of dielectric layers and dielectric constant of Meta Materials) of Meta Materials with regulate and control it is corresponding too
The absorption frequency range and absorption intensity of Hertz wave, realize terahertz detector array terahertz wave band response range expansion, most
The detectivity of terahertz detector array is improved eventually.
In addition, the present embodiment has rasterisation gate structure and its various different grating pattern forms based on Meta Materials
Metal gate MOSFET be divided to for two kinds.Wherein the first is the periodic gate structure of having based on Meta Materials and its each
The metal gate MOSFET of the different grating pattern forms of kind has periodic gate structure and difference as Fig. 3 lists 2 kinds
The cross directional variations spacing of the metal gate MOSFET of grating pattern form, both patterns are W1 and W2 respectively；And second is base
In the metal gate MOSFET with aperiodicity rasterisation gate structure and its various different grating pattern forms of Meta Materials, such as
Shown in Fig. 4, a kind of metal gate MOSFET that gate structure and different grating pattern forms are rasterized with aperiodicity is listed,
Wherein the spacing of four kinds of patterns is W3, W4 and W5 respectively.
It is visited referring to Figure 1 with Fig. 2, the N × M of the present embodiment based on the metal gate MOSFET grid grating Terahertz of Meta Materials
Survey the output end V of device arrayOut (array)Be connected between the positive input of low-noise preamplifier the first capacitance C1,
Second bias voltage Vb2 and the second biasing resistor Rb2, wherein the second biasing resistor Rb2 and the second bias voltage Vb2 can be used for
It powers to low-noise preamplifier, the voltage feedback loop of low-noise preamplifier is mainly by first resistor Rf, the second electricity
Rg, the second capacitance C2 and third capacitance C3 composition are hindered, wherein can be by changing first resistor Rf and/or second resistance
The resistance value of Rg realizes the adjusting of low-noise preamplifier gain.
The output of MOSFET grid rasterisation detector array of the N × M that technical solution of the present invention proposes based on Meta Materials
Voltage signal is d. c. voltage signal, and the size of the d. c. voltage signal and the radiation intensity of terahertz signal are directly proportional, according to
The size of terahertz detector output voltage signal can be obtained the strength information of incident terahertz signal and realize terahertz detection.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all at this
Under the design of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/it is used in it indirectly
He is included in scope of patent protection of the invention relevant technical field.
Claims (8)
1.N × M rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that is based on super material including N × M
The metal gate MOSFET grid grating terahertz detector array of material, metal gate MOSFET grid grating of the N × M based on Meta Materials
Terahertz detector array is connected with first capacitance one end, the first capacitance other end and second biasing resistor one end phase
Even, the second biasing resistor other end is connected with the second bias voltage, the first capacitance other end and the second biasing resistor one
End simultaneously be connected with the anode of low-noise preamplifier, first resistor both ends respectively with the cathode of low-noise preamplifier with
And output end is connected, one end of first resistor is also connected with second resistance one end, the second resistance other end and the second capacitance
One end is connected, and second capacitance other end ground connection, one end of first resistor is also connected with third capacitance one end, third every
Straight capacitor other end ground connection.
2. N × M as described in claim 1 rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that
Metal gate MOSFET grid grating terahertz detector array of the N × M based on Meta Materials includes N × M NMOSFET mono-
Member, each NMOSFET unit are connected with third biasing resistor simultaneously, and third biasing resistor is also connected with third bias voltage.
3. N × M as claimed in claim 2 rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that
Each NMOSFET unit includes the rasterisation gate structure of having based on Meta Materials and various different grating pattern shapes
First metal gate MOSFET of formula, the first bias voltage, the first biasing resistor, the second metal gate MOSFET not rasterized；The
The grid of one metal gate MOSFET is connected with first biasing resistor one end, the first biasing resistor other end and the first bias voltage phase
Even, the source electrode ground connection of the first metal gate MOSFET, the drain electrode of the first metal gate MOSFET and the source electrode of the second metal gate MOSFET
It is connected, the grid of the second metal gate MOSFET is connected with the end SEL, and the drain electrode of the second metal gate MOSFET is connected with the end Vout.
4. N × M as claimed in claim 3 rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that
Polysilicon gate NMOSFET substitution can be used in the second metal gate MOSFET.
5. N × M as claimed in claim 3 rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that
By the first metal gate MOSFET of rasterisation by adjusting the rasterisation structural parameters of metal gate MOSFET grid and surpassing
Material parameter is to regulate and control the absorption frequency range and absorption intensity of corresponding THz wave.
6. N × M as claimed in claim 5 rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that
The rasterisation structural parameters include width, length, region area, the pattern form of grating；The Meta Materials parameter includes super
The structure and size of material, thickness of dielectric layers, dielectric constant.
7. N × M as claimed in claim 6 rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that
The first metal gate MOSFET is the periodic gate structure of having based on Meta Materials and its various different raster patterns
The metal gate MOSFET of case form.
8. N × M as claimed in claim 6 rasterizes detector array based on the MOSFET grid of Meta Materials, which is characterized in that
The first metal gate MOSFET is that the aperiodicity of having based on Meta Materials rasterizes gate structure and its various different gratings
The metal gate MOSFET of pattern form.
Priority Applications (2)
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| CN110381271B (en) | 2021-05-11 |
| LU101368B1 (en) | 2020-01-07 |
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