CN107479048A - InGaAs material MSM structures photoelectricity is mixed detector - Google Patents
InGaAs material MSM structures photoelectricity is mixed detector Download PDFInfo
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- CN107479048A CN107479048A CN201710751690.8A CN201710751690A CN107479048A CN 107479048 A CN107479048 A CN 107479048A CN 201710751690 A CN201710751690 A CN 201710751690A CN 107479048 A CN107479048 A CN 107479048A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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Abstract
InGaAs material MSM structures photoelectricity is mixed detector, is related to Non-scanning mode laser light four-dimensional imaging radar field, in order to meet the demand of the InGaAs material MSM feature detectors of FM/CW systems.Pixel included by the present invention is arranged using 64 × 64 arrays, and each pixel includes substrate, cushion, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode；Cushion, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode are set gradually on substrate, the material of absorbed layer is InGaAs；The length of each pixel and it is wide be 60 μm.The present invention is applied to photoelectricity mixing detection.
Description
Technical field
The present invention relates to Non-scanning mode laser light four-dimensional imaging radar field.
Background technology
Technique of laser imaging has been that the 1970s grow up one can be to target into the four-dimension since laser is born
The imaging technique of picture.So-called four-dimensional picture, refer to that laser imaging radar obtains abundant information, it is strong that target two dimensional surface can not only be obtained
Spend picture, moreover it is possible to obtain the two dimensional surface Range Profile (also referred to as three-dimensional distance picture) between target and radar system.Laser radar by
In recordable Laser emission and the time received, the time difference of the two is exactly that laser comes and goes required time between target and radar,
According to light velocity formula, it is easy to be converted into distance；That is, laser imaging radar can to the distance at difference in target with
Distinguishable measure, the three-dimensional distance picture of target can be obtained.Intensity image, it is exactly the reflection echo signal intensity in illumination to target
The build-in attributes such as material, posture with target are relevant, and echo signal intensity is referred to as intensity image, can be reflected with tonal gradation
Target unlike material and different postures.Therefore, laser imaging radar can into target it is four-dimensional as (one-dimensional intensity+three-dimensional away from
From).
Until late 1990s, laser imaging radar is always using scanning system.As science and technology continues to develop,
The problem of improving constantly with the demand of people, scan system maximum is into a width picture to target, is that frame frequency number is low with duration, this
In the air on motion platform, its deficiency is just especially prominent, so, people are in late 1990s, it is proposed that Non-scanning mode system.
AUS laboratory in 1996 proposes CW with frequency modulation (FM/CW) Non-scanning mode laser imaging radar system, is typical non-
Scan system laser imaging radar system.Shoot laser is expanded into face light by the program, can illuminate a piece of spatial domain at target,
The target being irradiated to will have reflected light return everywhere, have focal plane array detector in receiving terminal, with each pixel in the battle array of face
Point-by-point to receive echo simultaneously, being handled through high speed information can obtain irradiating the target four-dimension on spatial domain as feature.This system shows
So the imaging rate of relatively scanning system greatly improves.
The key technology for achieving this Non-scanning mode system is that develop can the highly sensitive detection of large area array that receives of face battle array
Device, as the infrared detector of focal plane array imaging.The planar array detector of Non-scanning mode laser imaging radar, more infrared spy
Survey device difference and be mainly that each pixel is a highly sensitive detector for providing distance and light intensity, possess ns notably
It is the fast-response ability of ps magnitudes.Ground force use for laboratory GaAs material MSM structures (metal-nonmetallic-metal structure) photoelectricity
Device is mixed, forms Non-scanning mode FM/CW laser imaging radar systems, using electric heterodyne technology, experiment gives remote mesh
Mark four-dimensional picture.
MSM structures are that one kind refers in particular to device, are metal-nonmetallic-metal structure (Metal- in detector field
Semiconductor-Metal, MSM), this is a kind of photosensitive detector in surface.Material surface is etched into interdigited electrode, sees
Fig. 7, electrode (metal)-semi-conducting material (nonmetallic)-electrode (metal), voltage is added between two electrodes, half after illumination
Photoelectron is produced at conductor material, between two electrodes motion form photoelectric current, usual MSM structures are back-to-back two pole to phase
Anti- diode, caused photoelectric current superposition output.
AUS laboratory uses the MSM structure planar array detectors made by GaAs materials, half exported with continuous wave
Conductor laser (813nm), the modulator controlled by Sweep Source, the chirped modulation signal of output 200MHz-800MHz frequency ranges enter
Row output, chirped modulation (FM/CW) laser is as shoot laser, irradiation target, and another of Sweep Source output simultaneously is the same as frequency
Chirped modulation voltage signal, be added on detector, the current signal of a chirped modulation added on each pixel of detector
As local oscillator electric signal.Returned to when the light being irradiated in target reflects on detector, photoelectric current (this light is produced in searching surface
Electric current is also to have certain time-delay, with frequency, chirped modulation frequency), this photoelectric current is referred to as the main electric signal that shakes, with detector
Produce electricity mixing between local oscillator electric signal on each pixel in addition, its difference frequency signal, be with the target four-dimension as the signal of information,
Postmenstruation is handled, and can obtain the intensity image of target area and the four-dimensional picture of Range Profile.
This scheme of ground force's use for laboratory and device, have obtained the four-dimensional image of distant object.But this work enters one
Step development is restricted, and the material GaAs that mainly detector has, its response wave length is in 0.5~0.9 mu m waveband, and this wave band
Available laser only has semiconductor laser.Because system is photoelectricity mixing, this laser for requiring to use can only be single
The semiconductor laser of pipe, but single-tube semiconductor laser power output is at most between 3-4W, it is impossible to accomplish again big
Power output, so it can see from laser radar equation, image-forming range is just greatly limited.
Therefore ground force laboratory it is also proposed the scheme further developed, i.e., by emitting laser, be changed to send out at that time
The fiber amplifier of optical fiber laser, particularly 1.55 mum wavelengths that exhibition is got up, the MSM detectors being adapted therewith, because of GaAs
Material loudness answers wavelength to limit, then is just no longer matched with GaAs materials.Therefore propose with InGaAs materials as detector, but just
After case proposes, the spy of (such as 64 × 64 pixels) the MSM structures for the large area array for using InGaAs material developments was not reported still so far
Survey device.
Also there was the relevant work that report makes of InGaAs material MSM feature detectors the country.But still not to large area array,
Such as 64 × 64 pixels, the reports of InGaAs material MSM feature detectors.
FM/CW systems need the planar array detector of MSM structures, are summarized from demand, and this detector needs satisfaction as follows
It is required that：
1. the consistent of detector and laser wavelength should be able to be met first.
2. because FM/CW systems are non-scanning systems, detector is focal plane imaging detection, for can realize at a distance into
Picture, detector responsivity is high, i.e., detector sensitivity is high, and responsiveness is defined as A/W, and every watt of incident light can be on the detector
Produce great photoelectric current.
3. also one important constraint, it is that this Non-scanning mode swashs outside removing these to the requirement of detector self performance
Photoimaging radar system, as applied on aerial sports platform, the requirement to detector, also to increase some new constraints.
To this application, just there is the requirement of a small size, detector is in itself before ensureing to have sufficiently high responsiveness
Put, it is necessary to try one's best and reduce the photosurface of large area array detector,
The content of the invention
The problem of demand of InGaAs material MSM feature detectors the invention aims to meet FM/CW systems,
So as to provide InGaAs material MSM structures photoelectricity mixing detector.
InGaAs materials MSM structures photoelectricity of the present invention is mixed detector, and included pixel uses 64 × 64 times
Column is arranged, and each pixel includes substrate, cushion, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode；
Cushion, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode, the material of absorbed layer are set gradually on substrate
For InGaAs；
The length of each pixel and it is wide be 60 μm.
The photoelectricity mixing planar array detector of 64 × 64 pixel large area array InGaAs materials, MSM structures, such planar array detector
One of main application is the laser imaging radar for Non-scanning mode, and this kind of laser imaging radar is mainly used for aerial sports
On platform.
To improve spatial resolution, it is necessary to which planar array detector is large area array, i.e., pixel number is tried one's best more, what the present invention developed
It is the planar array detector of 64 × 64 pixels, but to adapt to use on aerial sports platform, one of limitation of aerial sports platform is just
It is that volume is small.
This planar array detector is as reception system, and it must match with receiving optical antenna (optical system), and this is just
Requirement is proposed to detector focal plane size.By common application, if the effective receiving area of detector (focal plane) is greatly,
The reception then matched, which will enter optical system focal length, to be grown, if can reduce focal plane size, the focal length of optical system can
System requirements are dropped to, focal length reduces, and the volume of whole space platform can greatly reduce, and be allowed to advantageously in application.
Emulated by Silvaco device analysis softwares, and tested by the Material growth and actual process of different batches
Card, is the requirement of adaptive system, the photosensitive area of the present invention is designed as into 4.3mm × 4.3mm, the length and width of each pixel are
60μm。
Large area array is that detector pixel number increases, for example 64 × 64 pixels, total pel data are 4096 pixels, and this is to sky
Between the raising of resolution ratio be very important, it can be ensured that target image readability improves, but large area array requires simultaneously again
Size is small, and this requires to take measures, and optimised devices are to obtain optimum efficiency.The present invention develops 64 × 64 pixel large area arrays and visited
Device is surveyed, if being 100 μm according to pixel, image planes size is 6.4mm × 6.4mm, and corresponding optical system focal length length will be greater than
1m, this is difficult to meet demand.For that purpose it is necessary to develop the face battle array MSM self-mixing detectors of small pixel dimension.According to demand,
It is 60 μm to propose photosurface size, makes the nearly half of laser imaging system volume-diminished, and effect is fairly obvious.Refer to International reporting
Mark is compared, and the area of the pixel MSM structure planar array detectors of GaAs materials 32 × 32 is 8mm × 8mm, and image planes size is obviously reduced.
The InGaAs material MSM structures photoelectricity mixing detector of the present invention, not only face battle array it is big, while small size is ensured with big
Responsiveness.
Brief description of the drawings
Fig. 1 is the face battle array domain of the InGaAs material MSM structures photoelectricity mixing detector described in embodiment one；
Wherein, 1 is starting point, and 2 be that signal local oscillator inputs odd column, and 3 be that signal local oscillator inputs even column, and 4 be that signal is defeated
Go out odd-numbered line, 5 be signal output even number line, and 6 and 7 be earth terminal；
Fig. 2 is that the lower left quarter of the InGaAs material MSM structures photoelectricity mixing detector described in embodiment two is local
Schematic wiring diagram；
Wherein, D1 is 140 μm；
Fig. 3 is that the upper right quarter of the InGaAs material MSM structures photoelectricity mixing detector described in embodiment two is local
Schematic wiring diagram；
8 pairs of induction signal local oscillator input row, 9 corresponding signal output rows；10 be shunt capacitance；
Fig. 4 is chip effective district and scribing separation schematic diagram in embodiment two；
11 be scribe line, and D2 is 40 μm, and D3 is 230 μm；
Fig. 5 is the operation principle signal of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two
Figure；
Fig. 6 is the principle schematic of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two；
Fig. 7 is the schematic diagram of the interdigital electrode in embodiment two；
Wherein, 12 be interdigital electrode, and L is the spacing of interdigital electrode；
Fig. 8 is the longitudinal sectional view of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two；
Wherein, W is the width of interdigital electrode, and t is the thickness of interdigital electrode, and d is the thickness of active area, and l is interdigital electrode
Length；Active area includes cushion, absorbed layer, graded layer and Barrier-enhancement Layer；
Fig. 9 is the fabrication processing of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two
Figure；
Figure 10 is the schematic diagram of the pixel of InGaAs material MSM structures photoelectricity mixing detector；
13 ground connection, 14 be bias input end, and 15 be output end, and 16 be pixel；
Figure 11 is face battle array domain and the office of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two
Portion's enlarged drawing；
Figure 12 is the I-V characteristic curve of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two；
Figure 13 is that the photoresponse of the InGaAs material MSM structures photoelectricity mixing detector in embodiment one is write music
Line；
Figure 14 is that the photoresponse of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two is write music
Line；
Figure 15 is that the dark current characteristic of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two is bent
Line；
Figure 16 is the C-V characteristic curves of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two；
Figure 17 is the frequency response characteristic of the InGaAs material MSM structures photoelectricity mixing detector in embodiment two
Curve；
Figure 18 is the FM/CW Non-scanning mode Laser imagers composition frame charts in embodiment two；
Figure 19 is the schematic diagram of 220 meters of reflector target imagings in embodiment two；
Figure 20 is the intensity image of 220 meters of target imaging results in embodiment two；
Figure 21 is the Range Profile of 220 meters of target imaging results in embodiment two；
Figure 22 is the InGaAs material MSM structures photoelectricity mixing detector disk schematic diagram in embodiment two.
Embodiment
Embodiment one：Present embodiment is illustrated with reference to Fig. 1, the InGaAs materials described in present embodiment
MSM structures photoelectricity is mixed detector, and included pixel is arranged using 64 × 64 arrays, and each pixel includes substrate, buffering
Layer, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode；
Cushion, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode, the material of absorbed layer are set gradually on substrate
For InGaAs；
The length of each pixel and it is wide be 60 μm.
To reduce photosurface size, consider to reduce each pixel dimension first, but reduce pixel dimension to bring response
It the reduction of degree, must optimize for this, accomplish to reduce in pixel dimension while must accomplish there is as far as possible big responsiveness.
This requires the present invention to be mixed face battle array device to 64 × 64 pixels, InGaAs materials, MSM structures, photoelectricity, logical first
Cross Silvaco device simulation analysis softwares to be emulated, the then Material growth by different batches and flow, to actual process
Verified, compared, finally choose pixel dimension.
The present invention passes through this series of activities, finally have chosen each pixel dimension area as 60 × 60 μm2。
The present invention finally have chosen 60 × 60 μm of pixel area2, 64 × 64 pixel large area arrays InGaAs materials, MSM knot
Structure photoelectricity is mixed planar array detector.Explorer response sensitivity is only relevant with material structure technique, how much unrelated with pixel.Cause
This, according to project plan development technology, first flow goes out unit MSM detectors (only one pixel), test result, such as Figure 13 institutes
Show, response sensitivity is about 0.2A/W.
Because in the world to InGaAs large area arrays MSM structures photomixer part responsiveness there is not yet about designing and testing report
Lead, the responsiveness that the present invention realizes and the responsiveness that detector is mixed to the pixel MSM structures photoelectricity of GaAs materials 32 × 32
0.27A/W report compares, and has reached similar level.
Detector chip area is 5 × 5mm in Fig. 12, photosensitive area is 4.3 × 4.3mm2, wherein：Circle marker is whole
The starting point of face battle array.
Embodiment two：Present embodiment is illustrated with reference to Fig. 2 to Figure 22, present embodiment is to specific implementation
InGaAs material MSM structures photoelectricity mixing detector described in mode one is described further, in present embodiment, cushion
Material is InAlAs, and the material of graded layer is InGaAlAs, and the material of Barrier-enhancement Layer is InAlAs.The thickness of the cushion
Scope be 270mm to 330nm, the scope of the thickness of absorbed layer is 960mm to 1040nm, and the scope of the thickness of graded layer is
20mm to 30nm, the scope of the thickness of Barrier-enhancement Layer is 8mm to 12nm.
The layers of material of present embodiment and the thickness of layers of material, relative to existing photoelectricity be mixed detector material and
The thickness of material is changed, and can just be obtained by the combination of the layers of material of present embodiment and corresponding thickness higher
Responsiveness.
The InGaAs materials that the present invention carries out, MSM structures photoelectricity mixing detector development, through Sillvaco device simulations point
Analysis software emulation and different batches Material growth, flow and actual process are verified that its material structure is as shown in table 1, thickness
Numerical value select optimal value.
The InGaAs material MSM structures photoelectricity of table 1 is mixed material for detector structure table
| Material | Thickness | The title of layer |
| InAlAs | 10nm | Barrier-enhancement Layer |
| InGaAlAs | 25nm | Graded layer |
| InGaAs | 1000nm | Absorbed layer |
| InAlAs | 300nm | Cushion |
| InP Semi(Fe) | Substrate |
Wherein, dark current can be reduced, and then improve responsiveness, this hair as Barrier-enhancement Layer using InAlAs materials
The bright thickness by adjusting Barrier-enhancement Layer, 10nm is adjusted to by original 50nm, after tested, optical responsivity is by initial
0.2A/W brings up to 0.4A/W, significantly improves response device degree.
Present invention decreases pixel area, and so as to reduce photosensitive area, but responsiveness is not weakened, so that small size is big
Application of the planar array detector in the air on motion platform has further technology to ensure.
1st, detector manufacture craft
Using Conventional compounds semiconductor technology, but the technology of the present invention index request is combined, carry out some process optimizations and set
Meter.
The fabrication processing of detector is isolated including active region mesa, SiNx dielectric layer depositions etching, interdigitized comb gold
Belong to electrode fabrication, interconnecting metal layer making etc..Wherein SiNx media also act as pixel in addition to realizing the isolation of row and column metal level
Light window anti-reflection film acts on, and interdigital Schottky electrode metal is using electron beam evaporation Ti/Pt/Au and Pt/Ti/Pt/Au multilayer gold
Category.
Six step photoetching are needed altogether, and dielectric deposition, twice etching, metallizes twice twice, once plating and scribing etc., and Fig. 9 is
InGaAs material MSM structures photoelectricity is mixed the fabrication processing figure of detector.
2nd, parameter detector is tested
Detector device chip flow, chip dress patch reading circuit, is tied up with shell through Material growth on bottom plate with pin
After line and case package, the development of whole detector is completed, carries out static test (so-called static survey to parameter detector therewith
Examination, refers to and major parameter is tested on experimental bench).
(1) detector I-V characteristic is tested first
Using the semiconductor parametric testers of Keithley 4200,1.55 mum wavelength lasing light emitters etc. are tied to InGaAs materials MSM
I-V characteristic (electric current-voltage) characteristic of structure photoelectricity mixing detector is tested, and test result is shown in Figure 12, from test curve
See, device is working properly.
(2) photoresponse of InGaAs planar array detectors is tested
Detector responsivity is one of most important technical indicator of its performance.Surveyed with the semiconductor parameters of Keithley 4200
Try instrument, 1.55 mum wavelength lasing light emitters etc. and response characteristics to light test is carried out to detector, test result is shown in Figure 14.
(3) at the same test probe dark current characteristic, its result is shown in Figure 15, is as a result shown under 5V biass, dark current
About 5nA.
(4) electric capacity-voltage (C-V) relation curve of any detector is tested with Agilent 4279C-V testers,
See Figure 16, test result is shown：The parasitic capacitance of the lower device of 5V biass is 0.2PF.
(5) detector frequency response characteristic is determined, the lasing light emitter modulated using vector network analyzer, 1.55 mum wavelengths,
Frequency response to the different any detectors of bias is tested, as shown in figure 17, it is seen that under 5V biass, InGaAsMSM battle arrays
Row detector is in -3dB Time Bandwidths up to 1GHz.In fig. 17, under 5V biass, gain is horizontal to -32db from -29db landing 3db
Coordinate frequency is 1GHz, therefore bandwidth is 1GHz.
3rd, InGaAs materials MSM structures photoelectricity mixing detector assembly outfield target imaging experiment
InGaAs material MSM structures photoelectricity mixing detector has encapsulated, and is tested by indoor static, and having reached design will
After asking, Non-scanning mode laser imaging radar system is built with this detector, carries out the experiment of indoor and outdoor target imaging.
The Non-scanning mode laser imaging experimental provision schematic diagram built is shown in Figure 18, wherein, 17 be detector of the invention, and 18 are
Time reading circuit.
Wherein generating laser part is 1.55 μm of semiconductor lasers, is 200M by frequency-modulated generator chirped modulation frequency spectrum
~800M, through 1.55 μm of fiber amplifiers, it is amplified to more than 10W, the chirped modulation voltage that same frequency band is exported by Sweep Source is believed
Number, it is added on MSM devices and is irradiated to as local oscillation signal, Laser emission in the target of distant place, reflection return light is through optical system
It is pooled on the photosurface of detector focal plane, produces photoelectric current and carry out electric mixing with local oscillator electric current, signal is filtered, amplifier is put
Enter digital-to-analogue conversion system (A/D) greatly, be converted to data signal, the intensity image and Range Profile of target are handled out by image processor
(three-dimensional geometry picture).
Experimental result is shown in Figure 20 and 21.
The target A, Figure 20 that are made by reflector material and 21 target echoes detected for detector are placed at 220 meters
Intensity image and Range Profile.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.
Claims (6)
1.InGaAs material MSM structures photoelectricity is mixed detector, it is characterised in that included pixel uses 64 × 64 arrays
Arrangement, each pixel include substrate, cushion, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode；
Cushion, absorbed layer, graded layer, Barrier-enhancement Layer and interdigital electrode are set gradually on substrate, the material of absorbed layer is
InGaAs；
The length of each pixel and it is wide be 60 μm.
2. InGaAs materials MSM structures photoelectricity according to claim 1 is mixed detector, it is characterised in that the buffering
The material of layer is InAlAs, and the material of graded layer is InGaAlAs, and the material of Barrier-enhancement Layer is InAlAs.
3. InGaAs materials MSM structures photoelectricity according to claim 1 or 2 is mixed detector, it is characterised in that described slow
The scope for rushing the thickness of layer is 270mm to 330nm.
4. InGaAs materials MSM structures photoelectricity according to claim 3 is mixed detector, it is characterised in that the absorption
The scope of the thickness of layer is 960mm to 1040nm.
5. InGaAs materials MSM structures photoelectricity according to claim 4 is mixed detector, it is characterised in that described gradual
The scope of the thickness of layer is 20mm to 30nm.
6. InGaAs materials MSM structures photoelectricity according to claim 5 is mixed detector, it is characterised in that the potential barrier
The scope of the thickness of enhancement layer is 8mm to 12nm.
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| CN109449265A (en) * | 2018-12-24 | 2019-03-08 | 中科天芯科技（北京）有限公司 | A kind of light beam imaging device |
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