CN109326616A - A kind of big front indium GaAs MSM structure photoelectricity mixing detector array and its manufacturing method of low-dark current - Google Patents
A kind of big front indium GaAs MSM structure photoelectricity mixing detector array and its manufacturing method of low-dark current Download PDFInfo
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- 230000005622 photoelectricity Effects 0.000 title claims abstract description 29
- 238000002156 mixing Methods 0.000 title claims abstract description 19
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 12
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 11
- 229910004205 SiNX Inorganic materials 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000005036 potential barrier Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
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- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 22
- 239000010936 titanium Substances 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 238000002161 passivation Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention proposes a kind of big front indium GaAs MSM structure photoelectricity of low-dark current mixing detector array and its manufacturing methods, belong to Non-scanning mode laser active four-dimensional imaging Radar Technology field.The array includes focal plane array；One side surface of MSM focal plane array is equipped with photosurface；The photosurface is equipped with 64 × 64 pixels, and another side surface of MSM focal plane array is successively covered with buffer layer, absorbed layer, graded layer and Barrier-enhancement Layer on position corresponding with the photosurface；Five pairs of back-to-back Schottky are successively arranged along the position of center line of the Barrier-enhancement Layer.The photoelectricity mixing detector array and its manufacturing method can be effectively reduced the dark current of large area array detector array.
Description
Technical field
The present invention relates to a kind of big front indium GaAs MSM structure photoelectricity of low-dark current mixing detector array and its systems
Method is made, Non-scanning mode laser active four-dimensional imaging Radar Technology field is belonged to.
Background technique
Laser imaging radar technology has been since laser is born, and nineteen seventies grow up one to target
At the imaging technique of four-dimensional picture.Until later 1990s, laser imaging radar is all using scanning system.With section
The progress of skill, also with the continuous improvement that people require, scanning system because its at a width as the used time is longer, frame frequency number is low, seriously
Image quality is influenced, especially in the sky on motion platform, this deficiency just seems especially prominent.Twentieth century end, scientific research personnel
Non-scanning mode laser imaging radar system is proposed, the FM/cw system that US Army laboratory in 1998 proposes is a typical generation
Table.
One of the key for achieving this Non-scanning mode system is that need to develop can be with face battle array focal plane received high sensitivity
Detector, referred to as planar array detector.But for such detector, there is no large area array InGaAs (indium gallium arsenic) material metals-
Nonmetallic-metal (Metol-Semiconductor-Metal, i.e. MSM) structure photoelectricity mixing array detector, i.e., it is international at present
On battle array InGaAs material MSM detector only have 8*8 pixel face battle array specification.Also, for the dark electricity in MSM photoelectric detector
Stream, dark current in MSM photoelectric detector certainly will be increased by forming large area array by way of increasing pixel merely, make MSM photoelectricity
It can not normal use in detector.
Summary of the invention
The present invention for large area array InGaAs material metal-nonmetallic-metal (Metol-Semiconductor-Metal,
That is MSM) structure photoelectricity mixing array detector the problem of can not reducing dark current, propose a kind of 64 × 64 pictures of low-dark current
First InGaAsMSM structure photoelectricity is mixed detector array.
A kind of indium GaAs MSM structure photoelectricity mixing detector array of low-dark current, the array includes focal plane
Battle array；One side surface of MSM focal plane array is equipped with photosurface；The photosurface is equipped with 64 × 64 pixels, and the MSM is burnt
Successively be covered on the position corresponding with the photosurface of plane face another side surface of battle array buffer layer, absorbed layer, graded layer and
Barrier-enhancement Layer；Five pairs of back-to-back Schottky are successively arranged along the position of center line of the Barrier-enhancement Layer.
Further, the MSM focal plane array is rectangular surfaces battle array, the focal plane MSM described in the side for being equipped with photosurface
On the battle array surface of face, signal LO is respectively equipped on the face battle array surface of the array edge of two sides up and down of the MSM focal plane array
It inputs odd column and signal LO inputs even column；In the face of the left and right sides array edge close to MSM focal plane array battle array
Signal output odd column and signal output even column are respectively equipped on surface；The focal plane MSM described in the side for being equipped with photosurface
One corner position on face battle array surface is equipped with label starting point, and the another two vertex of apex angle is set where being different from label starting point
There is GND grounding point.
Further, the area of the focal plane array is 5 × 5m2；The area of photosurface is 4.3 × 4.3m2；Each picture
The size of member is 60 × 60 μm2；The signal LO input odd column, signal LO input even column, signal output odd column and letter
Number output even column include 32 endpoints.
Further, the buffer layer is made of InAlAs material, the buffer layer with a thickness of 300nm；The suction
Layer is received to be made of InGaAs material, the absorbed layer with a thickness of 1000nm；The buffer layer uses InGaAlAs material system
At, the graded layer with a thickness of 25nm；The absorbed layer is made of InAlAs SEL material, the thickness of the Barrier-enhancement Layer
Degree is 10nm.
Further, the back-to-back Schottky uses Pt/Ti/Pt/Au barrier metal electrode.
Further, the array is equipped with passivating film；The passivating film deposits low stress SiNx film using PECVD；
The passivating film covers array chip surface.
A kind of manufacturing method of the mixing detector array of photoelectricity described in claim 1, the technical solution taken are as follows: institute
The method of stating includes:
Step 1: table top photoetching is carried out to disk using litho machine；
Step 2: using chemical wet etching technique or dry plasma etch technique to active region mesa corroded every
From；
Step 3: it is passivated using using SiN and SiO2 two-layered medium focal plane array surface, in chip surface shape
Low stress SiNx passivating film is deposited at PECVD；
Step 4: window lithography is carried out to array chip by gluing, photoetching and developing process；
Step 5: make exposure mask using photoresist on plasma etching equipment and carry out dielectric etch；
Step 6: the photoetching of potential barrier figure is carried out to array chip using litho machine；
Step 7: evaporation of metal is carried out to array chip using electron beam evaporation equipment；
Step 8: array chip is passivated using using SiN and SiO2 two-layered medium, is formed on the chip surface
PECVD deposits low stress SiNx passivating film；
Step 9: hole photoetching is carried out on pixel interconnection hole site using litho machine；
Step 10: dielectric etch is carried out to intercommunicating pore using plasma etching equipment；
Step 11: TiAu sputtering is carried out to array surface using magnetron sputtering apparatus；
Step 12: plating interconnection is carried out to pixel using plating gold process；
Step 13: array wafer is carried out back thinning using machinery grinding stripping apparatus.
Further, once the dielectric thickness between wiring and secondary wiring is 1000nm and 1200nm.
The invention has the advantages that:
A kind of low-dark current proposed by the present invention big front indium GaAs MSM structure photoelectricity mixing detector array and its
Production method by buffer layer, absorbed layer, graded layer and Barrier-enhancement Layer structure and thickness design, in conjunction with Schottky electrode
The design of technologic material structure and the setting of passivating film and processing technology can be effectively reduced large area array photoelectricity mixing detector array
The dark current of column, large area array photoelectricity can be mixed to the dark current occurred in detector array reduces 4-5 times, to improve light
Electric detectivity can provide a kind of novel focal plane imaging detector for laser imaging radar.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of MSM detector of the present invention；
Fig. 2 is the structural schematic diagram of focal plane array of the present invention；
Fig. 3 is the composed structure schematic diagram of schottky metal electrode of the present invention；
Fig. 4 is the curve graph that barrier metal influences dark current；
Fig. 5 is the dark current characteristic figure of device before being passivated；
Fig. 6 is the dark current characteristic figure of device after passivation；
Fig. 7 is the production flow diagram that InGaAs MSM electricity is mixed detector array.
Specific embodiment
The present invention will be further described combined with specific embodiments below, but the present invention should not be limited by the examples.
Embodiment 1:
A kind of indium GaAs MSM structure photoelectricity mixing detector array of low-dark current, the array includes focal plane
Battle array；One side surface of MSM focal plane array is equipped with photosurface；The photosurface is equipped with 64 × 64 pixels, and the MSM is burnt
Successively be covered on the position corresponding with the photosurface of plane face another side surface of battle array buffer layer, absorbed layer, graded layer and
Barrier-enhancement Layer；Five pairs of back-to-back Schottky are successively arranged along the position of center line of the Barrier-enhancement Layer.
Wherein, the MSM focal plane array is rectangular surfaces battle array, the MSM focal plane array described in the side for being equipped with photosurface
On surface, signal LO input is respectively equipped on the face battle array surface of the array edge of two sides up and down of the MSM focal plane array
Odd column and signal LO input even column；On the face of the left and right sides array edge close to MSM focal plane array battle array surface
On be respectively equipped with signal output odd column and signal output even column；The MSM focal plane array described in the side for being equipped with photosurface
One corner position on surface is equipped with label starting point, and the another two vertex of apex angle is equipped with where being different from label starting point
GND grounding point.
The area of the focal plane array is 5 × 5m2；The area of photosurface is 4.3 × 4.3m2；The size of each pixel is
60×60μm2；The signal LO input odd column, signal LO input even column, signal output odd column and signal export even number
Column include 32 endpoints.
The buffer layer is made of InAlAs material, the buffer layer with a thickness of 300nm；The absorbed layer uses
InGaAs material is made, the absorbed layer with a thickness of 1000nm；The buffer layer is made of InGaAlAs material, described slow
Change layer with a thickness of 25nm；The absorbed layer is made of InAlAs SEL material, the Barrier-enhancement Layer with a thickness of 10nm,
Material for detector structure, is shown in Table 1.
Table 1 64 × 64InGaAs material MSM structure photoelectricity is mixed planar array detector material structure
The process of above layers growth are as follows:
With molecular beam epitaxial device, layers of material is grown.It is raw first on mixing semi-insulating (100) the face InP substrate of Fe (iron)
Then long InAlAs buffer layer 300nm grows InGaAs (indium GaAs) absorbed layer 1000nm, consider the spy with optical communication applications
Device difference is surveyed, is the performances such as the mixed frequency characteristic of optimised devices, the increasing of InAlAs10nm potential barrier should be grown after absorbed layer InGaAs
Strong layer.But to solve interface conduction band discontinuity between InGaAs absorbed layer and InAlAs Barrier-enhancement Layer, absorbed in InGaAs
InGaAlAs (indium gallium aluminum arsenide) graded layer of 25nm is grown after layer, then the InAlAs Barrier-enhancement Layer of regrowth 10nm.
The back-to-back Schottky uses Pt/Ti/Pt/Au barrier metal interdigital electrode.The present embodiment is in traditional Ti/
Pt/Au (titanium/platinum/gold) introduces Pt between electrode and material surface, form Pt/Ti/Pt/Au (platinum/titanium/platinum/gold) barrier metal
Electrode, as shown in Figure 3.Fig. 4 is the survey that Ti/Pt/Au with Pt/Ti/Pt/Au difference interdigital electrode is done on InAlAs Barrier-enhancement Layer
Test result.It can be seen that as the result is shown, using the device dark current of Pt/Ti/Pt/Au electrode than the device using Ti/Pt/Au electrode
Part dark current will reduce magnitude or more, and effect is fairly obvious.It can be seen that making barrier metal layer with Pt/Ti/Pt/Au, secretly
Electric current can substantially reduce.
The array is equipped with passivating film；The passivating film deposits low stress SiNx film using PECVD；The present embodiment is logical
SIN and SIO2 two-layered medium passivation mode is crossed to grow passivating film on the chip surface.Table top is isolated in effective protection, reduces table top
The electric leakage of side wall, and then reduce the electric leakage of 128 devices on conllinear.
It is as shown in Figure 5 and Figure 6 with dark current characteristic after passivation before passivation.As it can be seen that device dark current passivation front and back at least phase
Poor 4-5 times.Therefore, optimized medium passivation technology, to reducing, dark current is highly effective.
Embodiment 2
A kind of manufacturing method of the photoelectricity mixing detector array, as shown in Figure 7, which comprises
Step 1: table top photoetching is carried out to disk using litho machine；
Step 2: using chemical wet etching technique or dry plasma etch technique to active region mesa corroded every
From；
Step 3: it is passivated using SiN and SiO2 two-layered medium focal plane array surface, is formed in chip surface
PECVD deposits low stress SiNx passivating film；
Step 4: window lithography is carried out to array chip by gluing, photoetching and developing process；
Step 5: make exposure mask using photoresist on plasma etching equipment and carry out dielectric etch；
Step 6: the photoetching of potential barrier figure is carried out to array chip using litho machine；
Step 7: evaporation of metal is carried out to array chip using electron beam evaporation equipment；
Step 8: array chip is passivated using SiN and SiO2 two-layered medium, forms PECVD on the chip surface
Deposit low stress SiNx passivating film；
Step 9: hole photoetching is carried out on pixel interconnection hole site using litho machine；
Step 10: dielectric etch is carried out to intercommunicating pore using plasma etching equipment；
Step 11: TiAu sputtering is carried out to array surface using magnetron sputtering apparatus；
Step 12: plating interconnection is carried out to pixel using plating gold process；
Step 13: array wafer is carried out back thinning using machinery grinding stripping apparatus.
Wherein, the dielectric thickness difference between the primary wiring and secondary wiring of the photoelectricity mixing detector array manufacture
For 1000nm and 1200nm.
A kind of low-dark current proposed by the present invention big front indium GaAs MSM structure photoelectricity mixing detector array and its
Production method by buffer layer, absorbed layer, graded layer and Barrier-enhancement Layer structure and thickness design, in conjunction with Schottky electrode
The design of technologic material structure and the setting of passivating film and processing technology can be effectively reduced large area array photoelectricity mixing detector array
The dark current of column, large area array photoelectricity can be mixed to the dark current occurred in detector array reduces 4-5 times, to improve light
Electric detectivity can provide a kind of novel focal plane imaging detector for laser imaging radar.
Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the invention, any to be familiar with this
The people of technology can do various changes and modification, therefore protection of the invention without departing from the spirit and scope of the present invention
Range should subject to the definition of the claims.
Claims (8)
1. a kind of big front indium GaAs MSM structure photoelectricity of low-dark current is mixed detector array, which is characterized in that the battle array
Column include focal plane array；One side surface of MSM focal plane array is equipped with photosurface；The photosurface is equipped with 64 × 64
Pixel is successively covered with buffer layer on the position corresponding with the photosurface of another side surface of MSM focal plane array, inhales
Receive layer, graded layer and Barrier-enhancement Layer；Five couples of back-to-back Xiao Te are successively arranged along the position of center line of the Barrier-enhancement Layer
Base.
2. photoelectricity is mixed detector array according to claim 1, which is characterized in that the MSM focal plane array is rectangle
Face battle array, described in the side for being equipped with photosurface on MSM focal plane array surface, close to up and down the two of the MSM focal plane array
Signal LO input odd column and signal LO input even column are respectively equipped on the face battle array surface of side array edge；Close to described
Signal output odd column is respectively equipped on the face battle array surface of the left and right sides array edge of MSM focal plane array and signal output is even
Ordered series of numbers；Label starting point is equipped on one corner position on the MSM focal plane array surface described in the side for being equipped with photosurface, in area
The another two vertex of apex angle is not equipped with GND grounding point where label starting point.
3. photoelectricity according to claim 1 or claim 2 is mixed detector array, which is characterized in that the area of the focal plane array
For 5 × 5m2；The area of photosurface is 4.3 × 4.3m2；The size of each pixel is 60 × 60 μm2；The signal LO inputs odd number
Column, signal LO input even column, signal output odd column and signal output even column include 32 endpoints.
4. photoelectricity is mixed detector array according to claim 1, which is characterized in that the buffer layer uses InAlAs material
Be made, the buffer layer with a thickness of 300nm；The absorbed layer is made of InGaAs material, the absorbed layer with a thickness of
1000nm；The buffer layer is made of InGaAlAs material, the graded layer with a thickness of 25nm；The absorbed layer uses
InAlAs SEL material is made, the Barrier-enhancement Layer with a thickness of 10nm.
5. photoelectricity is mixed detector array according to claim 1, which is characterized in that the back-to-back Schottky uses Pt/
Ti/Pt/Au barrier metal electrode.
6. being mixed detector array according to photoelectricity described in claim 1, which is characterized in that the array is equipped with passivating film；It is described
Passivating film deposits low stress SiNx film using PECVD；The passivating film covers array chip surface.
7. a kind of manufacturing method of the mixing detector array of photoelectricity described in claim 1, which is characterized in that the described method includes:
Step 1: table top photoetching is carried out to disk using litho machine；
Step 2: corrosion isolation is carried out to active region mesa using chemical wet etching technique or dry plasma etch technique；
Step 3: it is passivated using using SiN and SiO2 two-layered medium focal plane array surface, is formed in chip surface
PECVD deposits low stress SiNx passivating film；
Step 4: window lithography is carried out to array chip by gluing, photoetching and developing process；
Step 5: make exposure mask using photoresist on plasma etching equipment and carry out dielectric etch；
Step 6: the photoetching of potential barrier figure is carried out to array chip using litho machine；
Step 7: evaporation of metal is carried out to array chip using electron beam evaporation equipment；
Step 8: array chip is passivated using using SiN and SiO2 two-layered medium, forms PECVD on the chip surface
Deposit low stress SiNx passivating film；
Step 9: hole photoetching is carried out on pixel interconnection hole site using litho machine；
Step 10: dielectric etch is carried out to intercommunicating pore using plasma etching equipment；
Step 11: TiAu sputtering is carried out to array surface using magnetron sputtering apparatus；
Step 12: plating interconnection is carried out to pixel using plating gold process；
Step 13: array wafer is carried out back thinning using machinery grinding stripping apparatus.
8. the manufacturing method of photoelectricity mixing detector array according to claim 7, which is characterized in that primary wiring SiN is situated between
For matter with a thickness of 1000nm, SiN the and SiO2 dielectric thickness between primary wiring and secondary wiring is 1000nm and 1200nm.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389797A (en) * | 1993-02-24 | 1995-02-14 | The United States Of America As Represented By The Secretary Of The Department Of Energy | Photodetector with absorbing region having resonant periodic absorption between reflectors |
| CN1672267A (en) * | 2002-07-25 | 2005-09-21 | 国立科学研究中心 | MSM-type photodetector device with resonant cavity comprising a mirror with metal electrode grating |
| CN107479048A (en) * | 2017-08-28 | 2017-12-15 | 哈尔滨工业大学 | InGaAs material MSM structures photoelectricity is mixed detector |
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2018
- 2018-09-14 CN CN201811073723.9A patent/CN109326616A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389797A (en) * | 1993-02-24 | 1995-02-14 | The United States Of America As Represented By The Secretary Of The Department Of Energy | Photodetector with absorbing region having resonant periodic absorption between reflectors |
| CN1672267A (en) * | 2002-07-25 | 2005-09-21 | 国立科学研究中心 | MSM-type photodetector device with resonant cavity comprising a mirror with metal electrode grating |
| CN107479048A (en) * | 2017-08-28 | 2017-12-15 | 哈尔滨工业大学 | InGaAs material MSM structures photoelectricity is mixed detector |
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