CN110381271B - NxM MOSFET grid grating array detector based on metamaterial - Google Patents
NxM MOSFET grid grating array detector based on metamaterial Download PDFInfo
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Abstract
The invention discloses an NxM metamaterial-based MOSFET grid grating array detector, wherein an NxM metamaterial-based metal grid MOSFET grid grating terahertz detector array is connected with one end of a first blocking capacitor, the other end of the first blocking capacitor is connected with one end of a second biasing resistor, the other end of the second biasing resistor is connected with a second biasing voltage, the other end of the first blocking capacitor and one end of the second biasing resistor are simultaneously connected with the anode of a low-noise preamplifier, the two ends of the first resistor are respectively connected with the cathode and the output end of the low-noise preamplifier, one end of the first resistor is also connected with one end of a second resistor, the other end of the second resistor is connected with one end of the second blocking capacitor, the other end of the second blocking capacitor is grounded, one end of the first resistor is also connected with one end of a third blocking capacitor, and the other end of the third blocking capacitor is grounded. Compared with the prior art, the technical scheme of the invention has the advantages of high integration level, high response speed, high detection sensitivity, high imaging resolution and the like.
Description
Technical Field
The invention relates to the field of terahertz detectors, in particular to an NxM metamaterial-based MOSFET grid grating array detector.
Background
Terahertz waves are between microwaves and infrared light in an electromagnetic spectrum, the frequency range is from 0.1THz to 10THz, and in recent years, with the rapid development of terahertz radiation sources and terahertz detection technologies, the terahertz technologies also attract people to pay attention and research. The terahertz radiation can penetrate through most of non-metal and non-polar substances which are not transparent to visible light to realize imaging, and the photon energy of the terahertz radiation is low and cannot cause damage to organisms, so that the terahertz imaging technology has wide application prospects in the fields of public safety, nondestructive testing and the like due to the unique advantageous characteristics.
In addition, the terahertz wave has the characteristics of water fear, spectral resolution, large bearing information amount and the like, so that the terahertz imaging technology can have important application and application value in the fields of biological medical treatment, drug detection, wireless communication, satellite communication and the like.
As a fundamental requirement for development of terahertz technology, one of important fields of extension of terahertz technology is terahertz detection and imaging technology, and the existing terahertz detection and imaging technology generally has the problems of low response speed, low detection sensitivity, low single-pixel detection imaging resolution and the like, so that the integrated application and development of terahertz detection and imaging technology are limited to a great extent.
At present, terahertz detection is proved to be very feasible based on a HEMT of a grating grid electrode, but because the HEMT process is incompatible with the CMOS process and the resolution of detection imaging based on a single-pixel HEMT is low, in practical application, the back-end circuits such as a reading circuit, a signal processing circuit and the like of the terahertz detector basically need to be realized by adopting the CMOS, and the imaging performance of high resolution is an important index pursued by people. Therefore, the development trend of the terahertz detection and imaging technology is high responsivity, high sensitivity, high integration and high resolution, and the development of the room-temperature terahertz detector array based on the CMOS compatible process and the terahertz source is the imaging performance of terahertz detection and imaging to realize low-cost full integration, high responsivity, high sensitivity and high resolution is the current research hotspot.
Disclosure of Invention
The invention mainly aims to provide an NxM metamaterial-based MOSFET grid grating array detector with high integration level, high response speed, sensitive detection and high imaging resolution, and aims to solve the technical problems of low response speed, low detection sensitivity and low single-pixel detection imaging resolution commonly existing in terahertz detection and imaging technologies in the prior art.
In order to achieve the above object, the present invention provides an nxm metamaterial-based MOSFET gate rasterized array detector, which comprises an nxm metamaterial-based metal gate MOSFET gate grating terahertz detector array, wherein the nxm metamaterial-based metal gate MOSFET gate grating terahertz detector array is connected to one end of a first blocking capacitor, the other end of the first blocking capacitor is connected to one end of a second bias resistor, the other end of the second bias resistor is connected to a second bias voltage, the other end of the first blocking capacitor and one end of the second bias resistor are simultaneously connected to an anode of a low noise preamplifier, two ends of the first resistor are respectively connected to a cathode and an output end of the low noise preamplifier, one end of the first resistor is further connected to one end of the second resistor, the other end of the second resistor is connected to one end of the second blocking capacitor, the other end of the second blocking capacitor is grounded, one end of the first resistor is further connected to one end of a third blocking capacitor, the other end of the third blocking capacitor is grounded.
Preferably, the N × M metamaterial-based metal gate MOSFET gate grating terahertz detector array comprises N × M NMOSFET units, each NMOSFET unit is connected with a third bias resistor at the same time, and the third bias resistor is further connected with a third bias voltage.
Preferably, each NMOSFET unit comprises a first metal gate MOSFET, a first bias voltage, a first bias resistor and a second metal gate MOSFET which are not rasterized, wherein the first metal gate MOSFET is based on a metamaterial and has a rasterized gate structure and various different grating pattern forms; the grid electrode of the first metal grid MOSFET is connected with one end of a first bias resistor, the other end of the first bias resistor is connected with a first bias voltage, the source electrode of the first metal grid MOSFET is grounded, the drain electrode of the first metal grid MOSFET is connected with the source electrode of the second metal grid MOSFET, the grid electrode of the second metal grid MOSFET is connected with the SEL end, and the drain electrode of the second metal grid MOSFET is connected with the Vout end.
Preferably, the second metal gate MOSFET may be replaced with a polysilicon gate NMOSFET.
Preferably, the first metal gate MOSFET subjected to rasterization adjusts and controls the absorption frequency band and the absorption intensity of the corresponding terahertz wave by adjusting the rasterization structure parameters and the metamaterial parameters of the gate of the metal gate MOSFET.
Preferably, the rasterization structure parameters include the width, length, area, pattern form of the grating; the metamaterial parameters comprise the structure, the size, the thickness and the dielectric constant of the metamaterial.
Preferably, the first metal-gate MOSFET is a metamaterial-based metal-gate MOSFET having a periodically rasterized gate structure and various grating pattern forms thereof.
Preferably, the first metal-gate MOSFET is a metamaterial-based metal-gate MOSFET having an aperiodic rasterized gate structure and various different grating pattern forms thereof.
Compared with the prior art, the technical scheme of the invention has the following advantages:
the N multiplied by M metamaterial-based MOSFET grid grating array detector is based on a silicon-based CMOS (complementary metal oxide semiconductor transistor) process, so that low-cost full integration with a read-out circuit, a signal processing circuit and other back-end circuits of a terahertz detector array can be conveniently realized, and large-scale batch mass production is facilitated. And the absorption frequency band and the absorption intensity of the corresponding terahertz wave can be regulated and controlled by adjusting the grating structure parameters (such as the width, the length, the area and the pattern form of the grating) and the parameters of the metamaterial (such as the structure, the size, the thickness of the dielectric layer, the dielectric constant and other parameters of the metamaterial), so that the expansion of the response range of the terahertz detector array in the terahertz wave band is realized, the detection sensitivity of the terahertz detector array is finally improved, and the narrow-band (even point-frequency) terahertz detection is realized.
Meanwhile, in each NMOSFET unit, the parameters of the grating structure of the metal gate MOSFET grid electrode based on the metamaterial and having the grating grid electrode structure and various different grating pattern forms and the parameters of the metamaterial can be the same or different, so that the metamaterial-based metal gate MOSFET grid electrode can be adaptively adjusted according to actual detection requirements. And by introducing a terahertz detector array technology, the number and scale of actual working pixel units are accurately controlled by a row selection control switch and a column selection control switch, each pixel unit keeps working independently and does not influence each other, and high-resolution imaging performance can be realized. In addition, in each NMOSFET unit, the width-to-length ratio W/L of the metal gate MOSFET based on the metamaterial and provided with the grating gate structure and various different grating pattern forms can be the same or different and can be adjusted according to actual detection requirements, and the width-to-length ratio W/L of the metal gate or the polysilicon gate NMOSFET which is not subjected to grating is generally the same and is similar to the function of a switch.
According to the technical scheme, the space energy enhancement of the weak terahertz signal to be detected can be realized by adopting the method of rasterizing the metal gate, so that the terahertz signal can be effectively detected. The grid electrode of the metal grid MOSFET in the terahertz detector array provided by the technical scheme of the invention is a metal grid based on a periodic or aperiodic grating structure of a metamaterial, and the periodic or aperiodic grating structure of a metamaterial layer has the capability of completely absorbing terahertz waves of a corresponding frequency band, so that once the terahertz detector array resonates with the terahertz waves of the corresponding frequency band, the resonance response speed of the terahertz detector array belongs to ultra-high-speed response, and the terahertz detector array can generate response signals in extremely short time, thereby greatly improving the response speed of the terahertz detector array. In addition, the technical scheme of the invention does not need to use an antenna, and can effectively avoid the problems of large loss of the on-chip antenna, low gain and radiation efficiency, large verification difficulty through DRC design rules and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an NxM metamaterial-based MOSFET grid rasterized array detector of the present invention;
FIG. 2 is a schematic structural diagram of an NxM metamaterial-based terahertz detector array with a metal gate MOSFET (metal-oxide-semiconductor field effect transistor) gate grating;
FIG. 3 is a schematic diagram of two metal-gated MOSFETs with periodically rasterized gate structures and different grating patterns according to the present invention;
fig. 4 is a schematic diagram of a metal gate MOSFET having an aperiodic rasterized gate structure and different grating pattern forms according to the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides an NxM metamaterial-based MOSFET grid grating array detector.
Referring to fig. 1, the nxm metamaterial-based MOSFET gate rasterized array detector in the embodiment of the invention specifically includes an nxm metamaterial-based metal gate MOSFET gate rasterized terahertz detector array, a second bias voltage Vb2, a second bias resistor Rb2, a first dc blocking capacitor C1, a low noise preamplifier and a voltage feedback loop of the low noise preamplifier. Specifically, the nxm metamaterial-based metal-gate MOSFET gate grating terahertz detector array of the embodiment is connected to one end of a first blocking capacitor C1, the other end of the first blocking capacitor C1 is connected to one end of a second bias resistor Rb2, the other end of the second bias resistor Rb2 is connected to a second bias voltage Vb2, the other end of the first blocking capacitor C1 and one end of the second bias resistor Rb2 are simultaneously connected to the anode of the low-noise preamplifier, two ends of a first resistor Rf are respectively connected to the cathode of the low-noise preamplifier and the output end of the low-noise preamplifier, one end of the first resistor Rf is further connected to one end of a second resistor Rg, the other end of the second resistor is connected to one end of a second blocking capacitor C2, the other end of the second blocking capacitor C2 is grounded, one end of the first resistor Rf is further connected to one end of a third blocking capacitor C3, and the other end of the third blocking capacitor C3 is grounded.
As shown in fig. 2, the nxm metamaterial-based metal gate MOSFET gate grating terahertz detector array comprises nxm NMOSFET cells (D11, D12, D13 … … DNM), that is, N Row selection control switches (Row1, Row2, Row3 … … Row N) in the transverse direction and M Column selection control switches (Column1, Column2, Column3 … … Column nm) in the longitudinal direction; each NMOSFET cell is also connected to a third bias resistor Rb3, which third bias resistor Rb3 is also connected to a bias voltage Vb 3.
Preferably, each NMOSFET cell (e.g., D11) of the present embodiment includes a left-side first metal gate MOSFET, a first bias voltage Vb1, a first bias resistor Rb1, and an un-rasterized right-side second metal gate MOSFET, based on meta-material, having a rasterized gate structure and various different raster pattern forms, and in other embodiments, the un-rasterized second metal gate MOSFET may be replaced with a polysilicon gate NMOSFET. Specifically, the gate of the first metal gate MOSFET on the left side is connected to one end of a first bias resistor Rb1, the other end of the first bias resistor Rb1 is connected to a first bias voltage Vb1, the source M1 of the first metal gate MOSFET on the left side is grounded, the drain of the first metal gate MOSFET on the left side is connected to the source of the second metal gate MOSFET on the right side, the gate of the second metal gate MOSFET on the right side is connected to the SEL end, and the drain of the second metal gate MOSFET on the right side is connected to the Vout end.
The grid electrode of the first rasterized metal gate MOSFET is loaded with a fixed direct current first bias voltage Vb1 and a first bias resistor Rb1, and the first rasterized metal gate MOSFET can be used for providing direct current power supply for the first rasterized metal gate MOSFET. In addition, the embodiment can also adjust and control the absorption frequency band and the absorption intensity of the corresponding terahertz wave by adjusting the grating structure parameters (such as the width, the length, the area and the pattern form of the grating) of the metal gate MOSFET grid and the parameters of the metamaterial (such as the structure, the size, the thickness of the dielectric layer, the dielectric constant and other parameters of the metamaterial), so that the extension of the response range of the terahertz detector array in the terahertz wave band is realized, and the detection sensitivity of the terahertz detector array is finally improved.
In addition, the metal gate MOSFET having the rastered gate structure and its various different grating pattern forms based on the meta-material of the present embodiment are classified into two types. The first of them is a meta-material based metal gate MOSFET with a periodically rasterized gate structure and its various grating patterns, such as fig. 3 enumerates 2 metal gate MOSFETs with a periodically rasterized gate structure and different grating patterns, whose laterally varying pitches are W1 and W2, respectively; and the second is a meta-material based metal-gate MOSFET with an aperiodic rasterized gate structure and its various grating pattern forms, as shown in fig. 4, listing a metal-gate MOSFET with an aperiodic rasterized gate structure and its various grating pattern forms, where the four patterns have a pitch of W3, W4, and W5, respectively.
Referring to fig. 1 and fig. 2, an output end V of an nxm metamaterial-based metal gate MOSFET gate grating terahertz detector array of the present embodimentout (array)And a first blocking capacitor C1, a second bias voltage Vb2 and a second bias resistor Rb2 are connected between the low-noise preamplifier and the positive input end, wherein the second bias resistor Rb2 and the second bias voltage Vb2 can be used for supplying power to the low-noise preamplifier, a voltage feedback loop of the low-noise preamplifier mainly comprises a first resistor Rf, a second resistor Rg, a second blocking capacitor C2 and a third blocking capacitor C3, and the adjustment of the gain of the low-noise preamplifier can be realized by changing the resistance value of the first resistor Rf and/or the second resistor Rg.
According to the technical scheme, the output voltage signal of the N multiplied by M metamaterial-based MOSFET grid grating array detector is a direct-current voltage signal, the magnitude of the direct-current voltage signal is in direct proportion to the radiation intensity of the terahertz signal, and the terahertz detection is realized by obtaining the intensity information of the incident terahertz signal according to the magnitude of the output voltage signal of the terahertz detector.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (6)
- The N multiplied by M metamaterial-based MOSFET grid grating array detector is characterized by comprising an N multiplied by M metamaterial-based metal grid MOSFET grid grating terahertz detector array, wherein the N multiplied by M metamaterial-based metal grid MOSFET grid grating terahertz detector array is connected with one end of a first blocking capacitor, the other end of the first blocking capacitor is connected with one end of a second biasing resistor, the other end of the second biasing resistor is connected with a second biasing voltage, the other end of the first blocking capacitor and one end of the second biasing resistor are simultaneously connected with the anode of a low-noise preamplifier, the two ends of a first resistor are respectively connected with the cathode and the output end of the low-noise preamplifier, one end of the first resistor is also connected with one end of a second resistor, the other end of the second resistor is connected with one end of the second blocking capacitor, the other end of the second blocking capacitor is grounded, one end of the first resistor is also connected with one end of a third blocking capacitor, the other end of the third blocking capacitor is grounded;the N multiplied by M metamaterial-based metal gate MOSFET grid grating terahertz detector array comprises N multiplied by M NMOSFET units, each NMOSFET unit is connected with a third bias resistor at the same time, and the third bias resistor is also connected with a third bias voltage;each NMOSFET unit comprises a first metal gate MOSFET, a first bias voltage, a first bias resistor and a second metal gate MOSFET which is not rasterized, wherein the first metal gate MOSFET is based on a metamaterial and has a rasterized gate structure and various different grating pattern forms; the grid electrode of the first metal grid MOSFET is connected with one end of a first bias resistor, the other end of the first bias resistor is connected with a first bias voltage, the source electrode of the first metal grid MOSFET is grounded, the drain electrode of the first metal grid MOSFET is connected with the source electrode of the second metal grid MOSFET, the grid electrode of the second metal grid MOSFET is connected with the SEL end, and the drain electrode of the second metal grid MOSFET is connected with the Vout end.
- 2. The nxm metamaterial-based MOSFET gate rasterized array probe of claim 1, wherein the second metal gate MOSFET can be replaced with a polysilicon gate NMOSFET.
- 3. The nxm metamaterial-based MOSFET gate rasterized array detector of claim 1, wherein the first metal gate MOSFET that is rasterized modulates an absorption frequency band and absorption intensity of a corresponding terahertz wave by adjusting rasterization structure parameters and metamaterial parameters of a metal gate MOSFET gate.
- 4. The nxm metamaterial-based MOSFET gate rasterized array probe of claim 3, wherein the rasterization configuration parameters include a width, a length, a region area, a pattern form of a grating; the metamaterial parameters comprise the structure, the size, the thickness and the dielectric constant of the metamaterial.
- 5. The nxm metamaterial-based MOSFET gate rasterized array probe of claim 4, wherein the first metal gate MOSFET is a metamaterial-based metal gate MOSFET having a periodically rasterized gate structure and various grating pattern forms thereof.
- 6. The nxm metamaterial-based MOSFET gate rasterized array probe of claim 4, wherein the first metal gate MOSFET is a metamaterial-based metal gate MOSFET having an aperiodic rasterized gate structure and various different forms of grating patterns thereof.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910485868.8A CN110381271B (en) | 2019-06-05 | 2019-06-05 | NxM MOSFET grid grating array detector based on metamaterial |
| LU101368A LU101368B1 (en) | 2019-06-05 | 2019-08-28 | NxM metamaterial-based MOSFET gate-rasterized array detector |
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| CN201910485868.8A CN110381271B (en) | 2019-06-05 | 2019-06-05 | NxM MOSFET grid grating array detector based on metamaterial |
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| CN110381271A CN110381271A (en) | 2019-10-25 |
| CN110381271B true CN110381271B (en) | 2021-05-11 |
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