CN112284532B - SBD detector based on N×M multi-frequency terahertz antenna array - Google Patents
SBD detector based on N×M multi-frequency terahertz antenna array Download PDFInfo
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- CN112284532B CN112284532B CN202010917441.3A CN202010917441A CN112284532B CN 112284532 B CN112284532 B CN 112284532B CN 202010917441 A CN202010917441 A CN 202010917441A CN 112284532 B CN112284532 B CN 112284532B
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- 239000003990 capacitor Substances 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 21
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000003574 free electron Substances 0.000 abstract description 3
- 238000011161 development Methods 0.000 description 4
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- 238000011056 performance test Methods 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0228—Control of working procedures; Failure detection; Spectral bandwidth calculation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
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Abstract
The invention discloses an SBD detector based on an N multiplied by M multi-frequency terahertz antenna array, which can enhance the energy of low kinetic energy electrons in an antenna by replacing a single terahertz antenna used for receiving terahertz signals in a traditional detector with the N multiplied by M terahertz antenna array and utilizing the resonance between terahertz waves and free electron groups in the antenna array, thereby improving the detection sensitivity. In addition, the single-frequency point terahertz antenna used for receiving the terahertz signals in the traditional detector is replaced by the multi-frequency point terahertz antenna, so that the detector can support detection of any multiple different frequency points. The multi-frequency terahertz antenna with any different frequency points can be designed according to actual requirements, so that one detector can support detection of a plurality of any different frequency points without replacing the terahertz detector, and the detection cost is effectively reduced.
Description
Technical Field
The invention relates to the technical field of terahertz detectors, in particular to an SBD detector based on an N multiplied by M multi-frequency terahertz antenna array.
Background
Terahertz (THz) generally refers to electromagnetic waves having a frequency of 0.1 to 10THz (wavelength of 0.03 to 3 mm). The long wave band is overlapped with millimeter wave (sub millimeter wave), and the development mainly depends on electronics science and technology; the short wave band coincides with the infrared ray, the development mainly depends on the photonics science and technology, and the visible terahertz wave is a frequency band for transition from the macroscopic electronics to the microscopic photonics, and occupies a very special position in the electromagnetic wave spectrum. The terahertz frequency is high, so that the spatial resolution is also high; and has high time resolution due to its short pulse. Thus, terahertz detection technology and terahertz spectroscopy technology constitute two main key technologies for terahertz applications. However, the lack of effective terahertz radiation generation and detection methods has long resulted in insufficient research and development of terahertz wave science technology. Therefore, the development of high-power terahertz radiation sources and high-performance terahertz detectors becomes a key to promote the development of terahertz wave science and technology.
Schottky diodes have the advantages of fast speed, good nonlinear effect, capability of operating at normal temperature, easy integration, etc., and are therefore often used as detection diodes in terahertz detectors. Conventional schottky diode-based terahertz detectors typically employ a single-frequency-point antenna structure. And because the actual terahertz radiation source has low power, the signal received by a single terahertz antenna is weak, so that the final detection effect is not ideal. In addition, most terahertz radiation sources are terahertz sources with discontinuous frequency points at present, and when the terahertz sources with different frequency points are replaced for detection, the detectors with corresponding frequency points are required to be replaced, so that the detection process is more complicated, and the detection cost is increased. Therefore, it is particularly important to develop a multi-frequency terahertz antenna array.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an SBD detector with high sensitivity, multiple frequency points and low cost based on an NxM multi-frequency terahertz antenna array.
In order to achieve the above purpose, the technical scheme provided by the invention is as follows:
the SBD detector based on the NxM multi-frequency terahertz antenna array comprises the NxM multi-frequency terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a bias voltage Vb1, a bias resistor Rb1, a Schottky diode, a detector, a read-out circuit test switch and a read-out circuit;
the transmission line TL1 in the matching network is connected with an NxM multi-frequency-point terahertz antenna array, the right end of the transmission line TL2 is connected with a Schottky diode, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit;
the anode of the Schottky diode is connected with one end of the bias resistor Rb1, and the cathode is grounded;
the other end of the bias resistor Rb1 is connected with bias voltage Vb1 and is used for supplying power to the Schottky diode;
the other end of the blocking capacitor C1 is grounded.
Further, the matching network employs a grounded coplanar waveguide transmission line.
Further, the nxm multi-frequency-point terahertz antenna array includes nxm multi-frequency-point terahertz antenna units, N row selection switches, and M column selection switches;
each N multiplied by M multi-frequency-point terahertz antenna unit comprises a multi-frequency-point terahertz antenna and an NMOSFET;
in each N multiplied by M multi-frequency-point terahertz antenna unit, the multi-frequency-point terahertz antenna is connected with the MSEL end of the NMOSFET, the SEL end of the NMOSFET is connected with the column selection switch of the column where the NMOSFET is located, and the Vout end of the NMOSFET is connected with the row selection switch of the row where the NMOSFET is located.
Further, the port impedance of the n×m multi-frequency terahertz antenna array is consistent with the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is consistent with the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is consistent with the port impedance of the schottky diode anode.
Further, the readout circuit comprises a low noise chopper amplifier and a high resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces offset and 1/f noise of the amplifier by utilizing a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
Further, the detector and readout circuit test switch includes a detector test switch S1 and a readout circuit test switch S2; the detector test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively.
Compared with the prior art, the scheme has the following principle and advantages:
1. by replacing a single terahertz antenna used for receiving terahertz signals in a traditional detector with an N multiplied by M terahertz antenna array, the energy of low-kinetic energy electrons in the antenna can be enhanced by utilizing the resonance of terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved.
2. The single-frequency point terahertz antenna used for receiving the terahertz signals in the traditional detector is replaced by the multi-frequency point terahertz antenna (the bandwidth of each frequency point can be designed to be a narrow band according to actual requirements), so that the detector can support detection of any plurality of different frequency points. The traditional detector needs to replace the detectors with different frequency points for detection with different frequency points, the multi-frequency-point terahertz antenna with any different frequency points can be designed according to actual requirements, and therefore detection of a plurality of any different frequency points can be supported by one detector without replacing the terahertz detector, and detection cost is effectively reduced.
3. The detector and the read-out circuit test switch are introduced, and the detector and the read-out circuit can be tested respectively when the circuit fails, so that the specific failure cause and position can be accurately determined.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the services required in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the figures in the following description are only some embodiments of the present invention, and that other figures can be obtained according to these figures without inventive effort to a person skilled in the art.
Fig. 1 is a schematic structural diagram of an SBD detector based on an nxm multi-frequency terahertz antenna array according to the present invention.
Detailed Description
The invention is further illustrated by the following examples:
as shown in fig. 1, the SBD detector based on the n×m multi-frequency terahertz antenna array includes an n×m multi-frequency point terahertz antenna array, a matching network including transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a bias voltage Vb1, a bias resistor Rb1, a schottky diode, a detector and readout circuit test switch, and a readout circuit;
the matching network adopts a grounded coplanar waveguide (GCPW) transmission line, the transmission line TL1 is connected with an NxM multi-frequency-point terahertz antenna array, the right end of the transmission line TL2 is connected with a Schottky diode, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit; the anode of the Schottky diode is connected with one end of the bias resistor Rb1, and the cathode is grounded; the other end of the bias resistor Rb1 is connected with bias voltage Vb1 and is used for supplying power to the Schottky diode; the other end of the blocking capacitor C1 is grounded.
The port impedance of the NxM multi-frequency terahertz antenna array is consistent with the left port impedance of the transmission line TL1, the left port impedance of the transmission line TL1 is consistent with the right port impedance of the transmission line TL2, and the right port impedance of the transmission line TL2 is consistent with the port impedance of the anode of the Schottky diode.
Specifically, the nxm multi-frequency point terahertz antenna array includes nxm multi-frequency point terahertz antenna units (D11, D12, D13, …, DNM), N Row selection switches (Row 1, row2, row3 … … Row N), and M Column selection switches (Column 1, column2, column3, …, column nm);
each N multiplied by M multi-frequency-point terahertz antenna unit comprises a multi-frequency-point terahertz antenna and an NMOSFET; the multi-frequency terahertz antenna can receive terahertz signals of a plurality of arbitrary different frequency points (the bandwidth of each frequency point can be designed to be a narrow band according to actual requirements).
In each N multiplied by M multi-frequency-point terahertz antenna unit, the multi-frequency-point terahertz antenna is connected with the MSEL end of the NMOSFET, the SEL end of the NMOSFET is connected with the column selection switch of the column where the NMOSFET is located, and the Vout end of the NMOSFET is connected with the row selection switch of the row where the NMOSFET is located.
Specifically, the readout circuit includes a low noise chopper amplifier and a high resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces offset and 1/f noise of the amplifier by utilizing a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
The detector and readout circuit test switch comprises a detector test switch S1 and a readout circuit test switch S2; the detector test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively. The method is mainly used for conveniently testing the detector and the readout circuit in the circuit fault process so as to determine the specific fault cause and position.
In this embodiment, the specific working procedure of the SBD detector based on the nxm multi-frequency terahertz antenna array is as follows:
when a Row selection switch and a Column selection switch of the N×M multi-frequency terahertz antenna array are closed (such as Row selection switch Row2 and Column selection switch Column2 are closed), a detector test switch S1 is opened, a read-out circuit test switch S2 is opened, terahertz signals received by the detector are amplified by a chopper amplifier and then enter a high-resolution analog-to-digital converter for digital processing, and then are subjected to D out Outputting the position;
when a Row selection switch and a Column selection switch of the NxM multi-frequency terahertz antenna array are closed (such as Row selection switch Row3 and Column selection switch Column3 are closed), a detector test switch S1 is closed, a read-out circuit test switch S2 is opened, a detector performance test is performed, if terahertz signals can be received to indicate that the detector works normally, otherwise, the detector works abnormally;
when the row selection switch and the column selection switch of the N multiplied by M multi-frequency point terahertz antenna array are opened (such as the row selection switch and the column selection switch are all opened), the detector test switch S1 is opened, the readout circuit test switch S2 is closed, the performance test of the readout circuit is performed, if D out The signal which is normally output and is digitally processed by the high-resolution analog-to-digital converter indicates that the reading circuit works normally, otherwise, the reading circuit works abnormally
In the embodiment, the single terahertz antenna used for receiving the terahertz signals in the traditional detector is replaced by the N multiplied by M terahertz antenna array, and the energy of low-kinetic energy electrons in the antenna can be enhanced by utilizing the resonance between terahertz waves and free electron groups in the antenna array, so that the detection sensitivity is improved. In addition, the single-frequency point terahertz antenna used for receiving the terahertz signals in the traditional detector is replaced by the multi-frequency point terahertz antenna (the bandwidth of each frequency point can be designed to be narrow-band according to actual requirements), so that one detector can support detection of any plurality of different frequency points. The conventional detector needs to replace the detectors with different frequency points for detection with different frequency points, and the multi-frequency-point terahertz antenna with any different frequency points can be designed according to actual requirements, so that one detector can support detection with a plurality of any different frequency points without replacing the terahertz detector, and detection cost is effectively reduced. Also, the present embodiment incorporates detector and readout circuit test switches that can be tested separately for the detector and readout circuit when the circuit fails, so as to accurately determine the specific failure cause and location.
The above embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, so variations in shape and principles of the present invention should be covered.
Claims (6)
1. The SBD detector based on the NxM multi-frequency terahertz antenna array is characterized by comprising the NxM multi-frequency terahertz antenna array, a matching network comprising transmission lines TL1, TL2 and TL3, a blocking capacitor C1, a bias voltage Vb1, a bias resistor Rb1, a Schottky diode, a detector, a readout circuit test switch and a readout circuit;
the transmission line TL1 in the matching network is connected with an NxM multi-frequency-point terahertz antenna array, the right end of the transmission line TL2 is connected with a Schottky diode, and the lower end of the transmission line TL3 is respectively connected with one end of a blocking capacitor C1, a detector, a reading circuit test switch and a reading circuit;
the anode of the Schottky diode is connected with one end of the bias resistor Rb1, and the cathode is grounded;
the other end of the bias resistor Rb1 is connected with bias voltage Vb1 and is used for supplying power to the Schottky diode;
the other end of the blocking capacitor C1 is grounded.
2. The SBD detector based on an nxm multi-frequency terahertz antenna array according to claim 1, wherein the matching network employs a grounded coplanar waveguide transmission line.
3. The SBD detector based on an nxm multi-frequency terahertz antenna array according to claim 1, wherein the nxm multi-frequency terahertz antenna array includes nxm multi-frequency terahertz antenna units, N row selection switches, and M column selection switches;
each N multiplied by M multi-frequency-point terahertz antenna unit comprises a multi-frequency-point terahertz antenna and an NMOSFET;
in each N multiplied by M multi-frequency-point terahertz antenna unit, M of multi-frequency-point terahertz antenna and NMOSFET SEL The ends are connected, and the SEL ends of the NMOSFETs are connected with column selection switches of the column out The ends are connected with the row selection switches of the row.
4. The SBD detector based on an nxm multi-frequency terahertz antenna array according to claim 1, wherein a port impedance of the nxm multi-frequency terahertz antenna array coincides with a left port impedance of a transmission line TL1, the left port impedance of the transmission line TL1 coincides with a right port impedance of a transmission line TL2, and the right port impedance of the transmission line TL2 coincides with a port impedance of an anode of a schottky diode.
5. The SBD detector based on an nxm multi-frequency terahertz antenna array according to claim 1, wherein the readout circuit includes a low noise chopper amplifier and a high resolution analog-to-digital converter; the low-noise chopper amplifier is connected between the transmission line TL3 and the high-resolution analog-to-digital converter, amplifies the received terahertz signal and reduces offset and 1/f noise of the amplifier by utilizing a chopper circuit technology; the high-resolution analog-to-digital converter digitizes the amplified terahertz signal so as to perform back-end signal processing.
6. The SBD detector based on an nxm multi-frequency terahertz antenna array according to claim 1, wherein the detector and readout circuit test switch includes a detector test switch S1 and a readout circuit test switch S2; the detector test switch S1 and the readout circuit test switch S2 are connected between the transmission line TL3 and the readout circuit, respectively.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103023502A (en) * | 2012-11-19 | 2013-04-03 | 清华大学深圳研究生院 | Method for eliminating chopping waves and ripple waves and analogue-digital conversion circuit for realizing method |
| CN106301230A (en) * | 2016-08-24 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW |
| CN109239787A (en) * | 2018-09-19 | 2019-01-18 | 天津大学 | A kind of terahertz wave detector based on array plaster antenna |
| CN109390702A (en) * | 2018-09-19 | 2019-02-26 | 天津大学 | Ge-Si heterojunction bipolar transistor detector based on substrate integration wave-guide antenna |
| CN109556714A (en) * | 2018-10-31 | 2019-04-02 | 中国科学院半导体研究所 | Terahertz light spectrum chip |
| CN110380186A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on N × M DRA array and N × M NMOSFET array |
-
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- 2020-09-03 CN CN202010917441.3A patent/CN112284532B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103023502A (en) * | 2012-11-19 | 2013-04-03 | 清华大学深圳研究生院 | Method for eliminating chopping waves and ripple waves and analogue-digital conversion circuit for realizing method |
| CN106301230A (en) * | 2016-08-24 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | A kind of based on the thick substrate integrated single balance mixer of Schottky diode CPW |
| CN109239787A (en) * | 2018-09-19 | 2019-01-18 | 天津大学 | A kind of terahertz wave detector based on array plaster antenna |
| CN109390702A (en) * | 2018-09-19 | 2019-02-26 | 天津大学 | Ge-Si heterojunction bipolar transistor detector based on substrate integration wave-guide antenna |
| CN109556714A (en) * | 2018-10-31 | 2019-04-02 | 中国科学院半导体研究所 | Terahertz light spectrum chip |
| CN110380186A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on N × M DRA array and N × M NMOSFET array |
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