CN109547717A - THz wave array image sensor chip - Google Patents
THz wave array image sensor chip Download PDFInfo
- Publication number
- CN109547717A CN109547717A CN201811292307.8A CN201811292307A CN109547717A CN 109547717 A CN109547717 A CN 109547717A CN 201811292307 A CN201811292307 A CN 201811292307A CN 109547717 A CN109547717 A CN 109547717A
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- Prior art keywords
- thz wave
- image sensor
- terahertz
- sensor chip
- array image
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention provides a kind of THz wave array image sensor chips, are related to THz wave detection technology field.The chip includes: Terahertz pixel array for receiving terahertz wave signal and exporting DC simulation signal；Column parallel read-out circuit by DC simulation signal for amplifying and being converted to digital signal；Electric power bias circuit is for providing bias voltage and bias current；Digital Logic control module is used to provide the line election time of parameter configuration and the control Terahertz pixel array to the column parallel read-out circuit to realize different imaging frame rates.The present invention is integrated on same silicon wafer by the detection array that terahertz detector is made into and by reading circuit, Digital Logic control module and electric power bias circuit, solves the problems, such as that single pixel scanning imagery takes long time and imaging system is excessively complicated.
Description
Technical field
The present invention relates to THz wave detection technology field field more particularly to a kind of THz wave array image sensors
Chip.
Background technique
THz wave refers to electromagnetic wave of the frequency within the scope of 0.1THz~10THz, and wave band is located at millimeter wave and infrared
Between light.THz wave has many unique properties, in safety inspection, biomedical imaging, quality monitoring and lossless detection
Equal fields have huge application prospect, and terahertz imaging majority is single pixel scanning imagery at present, or use piece foreign trader
Signal is amplified and handled with amplifier and ADC, or uses Advanced Packaging by pixel array and reading circuit module
It is packaged together, the above terahertz imaging system is not only complicated and higher cost.
Summary of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, the invention proposes a kind of by THz wave array image sensor chip, at least
Part solves above-mentioned technical problem.
(2) technical solution
According to an aspect of the present invention, a kind of THz wave array image sensor chip is provided, comprising:
Terahertz pixel array, for receiving terahertz wave signal and exporting DC simulation signal；
Column parallel read-out circuit, the DC simulation signal for exporting Terahertz column pixel amplify and are converted to number
Word signal；
Electric power bias circuit, for providing bias voltage to the Terahertz pixel array and the column parallel read-out circuit
And bias current；
Digital Logic control module, for providing parameter configuration and the control terahertz to the column parallel read-out circuit
Hereby the line election time of pixel array is to realize different imaging frame rates.
In a further embodiment, the Terahertz pixel array is greater than 1 × 1.
In a further embodiment, each pixel includes: on-chip antenna, field-effect crystalline substance in the Terahertz pixel array
Body pipe, matching network, notch filter and row selecting pipe；Wherein, the source electrode of the field effect transistor by matching network with
The on-chip antenna is connected, and the drain electrode of the field effect transistor is connected with the row selecting pipe, the field effect transistor
The grid of pipe is connected with the notch filter.
In a further embodiment, the column parallel read-out circuit includes multiple row reading circuit, and each column are read
Circuit includes chopper amplifier, for amplifying the DC simulation signal, and is output to analog-digital converter；Modulus turns
Parallel operation, for the output signal of the amplifier to be converted to digital signal.
In a further embodiment, its gain of the chopper amplifier and chopping frequency and analog-digital converter
Reference voltage is programmable.
6, THz wave array image sensor chip according to claim 4 or 5, which is characterized in that the mould
Number converter is over-sampling type analog-digital converter or successive approximation register type analog-to-digital converter.
In a further embodiment, the Digital Logic control module provides ginseng to the column parallel read-out circuit
Number configuration, for the copped wave frequency of chopper inside gain and the chopping frequency for controlling chopper amplifier, and control analog-digital converter
Rate and reference voltage numerical value.
In a further embodiment, the on-chip antenna is paster antenna, butterfly antenna, loop aerial or dipole
Antenna.
In a further embodiment, described notch filter one end is connected with the grid of field effect transistor, another
End is open circuit, and its length is determined according to the THz wave wavelength detected.
In a further embodiment, the matching network includes microstrip line and its between field effect transistor source electrode
Interconnection metal contact hole.
(3) beneficial effect
It can be seen from the above technical proposal that THz wave array image sensor chip of the present invention is by Terahertz pixel battle array
Column, column parallel read-out circuit, electric power bias circuit, Digital Logic control module are integrated on a chip, to have following
The utility model has the advantages that
(1) THz wave array image sensor chip provided by the invention can be carried out focal plane imaging, than traditional single picture
Plain scanning imagery speed is many fastly；
(2) DC simulation that THz wave array image sensor chip provided by the invention can export pixel in array
Signal is directly handled and is exported in piece as digital signal, is needed not rely on commercial chip or instrument outside piece, is made whole
Body structure is simpler, keeps imaging system easier, and overall price is less expensive, is suitble to produce in enormous quantities.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of THz wave of embodiment of the present invention array image sensor chip；
Fig. 2 is the dot structure schematic diagram of THz wave of embodiment of the present invention array image sensor chip；
Fig. 3 is the operation schematic diagram of THz wave of embodiment of the present invention array image sensor chip.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
The embodiment of the present invention will do referring to appended attached drawing in rear and more comprehensively describe to property, some of but and not all
Embodiment will be shown.In fact, various embodiments of the present invention can be realized in many different forms, and it is not necessarily to be construed as
It is limited to this several illustrated embodiment；Relatively, these embodiments are provided so that the present invention meets applicable legal requirement.
According to one embodiment of present invention, a kind of THz wave array image sensor chip is provided, comprising:
Terahertz pixel array, for receiving terahertz wave signal and exporting DC simulation signal；
Column parallel read-out circuit, the DC simulation signal for exporting Terahertz column pixel amplify and are converted to number
Word signal；
Electric power bias circuit, for providing bias voltage to the Terahertz pixel array and the column parallel read-out circuit
And bias current；
Digital Logic control module, for providing parameter configuration and the control terahertz to the column parallel read-out circuit
Hereby the line election time of pixel array is to realize different imaging frame rates.
Detection array that terahertz detector is made by the present invention and by reading circuit, Digital Logic control module and power supply
Biasing circuit is integrated on same silicon wafer, solves that single pixel scanning imagery takes long time and imaging system is excessively complicated asks
Topic.
Wherein, the Terahertz pixel array is pixel array greater than 1 × 1, for receiving terahertz wave signal and defeated
Low-frequency d analog signal supplies the column parallel read-out processing of circuit out.
In the present embodiment, each pixel includes: on-chip antenna in the Terahertz pixel array, for receiving THz wave
Signal；Field effect transistor includes source electrode, drain and gate, and source electrode is used to input the THz wave letter that the antenna receives
Number, drain electrode is used for output signal, is loaded with a bias voltage on grid, for providing bias voltage, makes field effect transistor
Pipe works in peak response area；Matching network, the terahertz wave signal power for receiving the antenna maximize transmission
Effect transistor is stated to place；Notch filter makes terahertz wave signal form AC deposition in grid, eliminates outside lead to field
The influence of effect transistor；Row selecting pipe, for choosing the same a line probe unit detected.Wherein, the field effect
The source electrode of transistor is answered to be connected by matching network with the on-chip antenna, the drain electrode of the field effect transistor and the row
Selecting pipe is connected, and the grid of the field effect transistor is connected with the notch filter.Wherein, the notch filter
One end is connected with the grid of field effect transistor, and the other end is open circuit, and its length is determined according to the THz wave wavelength detected
It is fixed, it is subject to simulated trim again in a quarter of CMOS insulating medium layer medium wavelength for THz wave to be measured.Wherein, the matching
Network includes microstrip line and its interconnection metal contact hole between field effect transistor source electrode.Preferably, the on-chip antenna
For paster antenna, butterfly antenna, loop aerial or dipole antenna.
Wherein, the column parallel read-out circuit amplifies the DC simulation signal exported from Terahertz pixel, later
The DC simulation signal of amplification is converted into digital signal and is exported.
In the present embodiment, the column parallel read-out circuit includes multiple row reading circuit, and each row reading circuit wraps
Chopper amplifier is included, for amplifying the DC simulation signal, and is output to analog-digital converter；Analog-digital converter is used
In the output signal of the amplifier is converted to digital signal.In the present embodiment, its gain of the chopper amplifier and
The reference voltage of chopping frequency and analog-digital converter is programmable.Preferably, the analog-digital converter is over-sampling pattern
Number converter or successive approximation register type analog-to-digital converter.
Wherein, the Digital Logic control module is by providing parameter configuration and control to the column parallel read-out circuit
The line election time of pixel array is to realize different imaging frame rates.
In the present embodiment, the Digital Logic control module provides parameter configuration to the column parallel read-out circuit,
Chopping frequency and reference for chopper inside gain and the chopping frequency for controlling chopper amplifier, and control analog-digital converter
Voltage value.In an exemplary embodiment of the present invention, a kind of THz wave array image sensor chip is provided.It should
THz wave array image sensor chip includes；Terahertz pixel array,；Column parallel read-out circuit, electric power bias circuit and
Digital Logic control module.By work in the THz wave array image sensor under 860GHz frequency for, to the present invention into
One step is described in detail.
Fig. 1 is the structural schematic diagram of THz wave of embodiment of the present invention array image sensor, as shown in Figure 1, of the invention
By Terahertz pixel array, column parallel read-out circuit, electric power bias circuit and digital control logic module are integrated in same silicon wafer
On, chip is realized using 180nm 1P6M standard CMOS process, and chip center is pixel array, and array size is 24 × 32, core
The piece left side is Digital Logic control module, is electric power bias circuit on the right of chip, and chip is up and down column parallel read-out circuit, due to
Width is larger when the layout drawing of reading circuit, so respectively place 16 row reading circuits up and down, above 16 column processing be odd number
Column pixel, below 16 column processing be even column pixels.
Fig. 2 is the single pixel structural representation in the pixel array of THz wave of embodiment of the present invention array image sensor
Figure, as shown in Fig. 2, wherein antenna is connected to the source electrode of field effect transistor by matching network, the grid of field effect transistor is connect
There is a notch filter, in order to make grid be AC deposition under THz wave frequency range, the drain electrode of field effect transistor is followed by a line
Selecting pipe, row selecting pipe gates the then external output signal of pixel energy, if row selecting pipe is by the not external output signal of pixel.
Fig. 3 is THz wave of embodiment of the present invention array image sensor pixel array operation schematic diagram.As shown in figure 3,
Row selection signal each moment only chooses a line, and the output signal of 32 pixels of a line then passes through row selecting pipe and is connected to 32 column
Handled on reading circuit, after the processes pixel of a line is complete, the row selection signal be it is low, the row selecting pipe of the row is all ended,
The pixel of this line is exported just to be disconnected between 32 row reading circuits, and then row selection signal makes the row selecting pipe of next line
High level turns it on, and and then the 32 of this line pixel output signal is connected to 32 row reading circuits and is handled, successively
24 row pixels of the array are handled, 24 rows have been handled, and are a frame images.
So far, attached drawing is had been combined the present embodiment is described in detail.According to above description, those skilled in the art
There should be clear understanding to THz wave array image sensor of the present invention.The present invention by Terahertz pixel array, column simultaneously
Row reading circuit, Digital Logic control module and electric power bias circuit module are integrated on same silicon wafer, the THz wave array
Imaging sensor can be carried out focal plane imaging, more many fastly than traditional single pixel scanning imagery speed, and THz wave array image
The DC simulation signal that pixel in array exports can directly be handled in piece and be exported as digital signal by sensor, be not required to
To keep overall structure simpler by the commercial chip or instrument outside piece,.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it
It singly changes or replaces.
It should also be noted that, can provide the demonstration of the parameter comprising particular value herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
It is only the direction with reference to attached drawing to term, such as "upper", "lower", "front", "rear", "left", "right" etc., is not used to limit this
The protection scope of invention.
Terahertz pixel array, column parallel read-out circuit, Digital Logic are controlled in conclusion the present invention provides a kind of
Module and electric power bias circuit module are integrated on same silicon wafer, the THz wave array image sensor can be carried out focal plane at
Picture, it is more many fastly than traditional single pixel scanning imagery speed, and THz wave array image sensor can export pixel in array
DC simulation signal directly handled and exported in piece need not rely on for digital signal commercial chip outside piece or
Instrument keeps overall structure simpler.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of THz wave array image sensor chip characterized by comprising
Terahertz pixel array, for receiving terahertz wave signal and exporting DC simulation signal；
Column parallel read-out circuit, the DC simulation signal for exporting Terahertz column pixel amplify and are converted to digital letter
Number；
Electric power bias circuit, for the Terahertz pixel array and column parallel read-out circuit offer bias voltage and partially
Set electric current；
Digital Logic control module, for providing parameter configuration and the control Terahertz picture to the column parallel read-out circuit
The line election time of pixel array is to realize different imaging frame rates.
2. THz wave array image sensor chip according to claim 1, which is characterized in that the Terahertz pixel
Array is greater than 1 × 1.
3. THz wave array image sensor chip according to claim 1 or 2, which is characterized in that the Terahertz
Each pixel includes: on-chip antenna, field effect transistor, matching network, notch filter and row selecting pipe in pixel array；Its
In, the source electrode of the field effect transistor is connected by matching network with the on-chip antenna, the field effect transistor
Drain electrode is connected with the row selecting pipe, and the grid of the field effect transistor is connected with the notch filter.
4. THz wave array image sensor chip according to claim 1, which is characterized in that the column parallel read-out
Circuit includes multiple row reading circuit, and each row reading circuit includes chopper amplifier, is used for the DC simulation signal
It amplifies, and is output to analog-digital converter；Analog-digital converter, for the output signal of the amplifier to be converted to digital letter
Number.
5. THz wave array image sensor chip according to claim 4, which is characterized in that the chopper amplification
The reference voltage of its gain of device and chopping frequency and analog-digital converter is programmable.
6. THz wave array image sensor chip according to claim 4 or 5, which is characterized in that the modulus turns
Parallel operation is over-sampling type analog-digital converter or successive approximation register type analog-to-digital converter.
7. THz wave array image sensor chip according to claim 1, which is characterized in that the Digital Logic
Control module provides parameter configuration to the column parallel read-out circuit, gain and chopping frequency for control chopper amplifier, with
And the chopping frequency and reference voltage numerical value of control analog-digital converter inside chopper.
8. THz wave array image sensor chip according to claim 3, which is characterized in that the on-chip antenna is
Paster antenna, butterfly antenna, loop aerial or dipole antenna.
9. THz wave array image sensor chip according to claim 3, which is characterized in that the notch filter
One end is connected with the grid of field effect transistor, and the other end is open circuit, and its length is determined according to the THz wave wavelength detected
It is fixed.
10. THz wave array image sensor chip according to claim 3, which is characterized in that the matching network
Interconnection metal contact hole including microstrip line and its between field effect transistor source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811292307.8A CN109547717A (en) | 2018-10-31 | 2018-10-31 | THz wave array image sensor chip |
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|---|---|---|---|
| CN201811292307.8A CN109547717A (en) | 2018-10-31 | 2018-10-31 | THz wave array image sensor chip |
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| CN201811292307.8A Pending CN109547717A (en) | 2018-10-31 | 2018-10-31 | THz wave array image sensor chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110855916A (en) * | 2019-11-22 | 2020-02-28 | 中国电子科技集团公司第四十四研究所 | Analog signal reading circuit array with variable output channel number and reading method |
| CN112230297A (en) * | 2020-09-03 | 2021-01-15 | 广东工业大学 | Detector based on NxM multi-frequency antenna array and SBD array |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140070103A1 (en) * | 2012-09-12 | 2014-03-13 | Stmicroelectronics Sa | Terahertz Imager |
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN106328754A (en) * | 2015-07-03 | 2017-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Combined terahertz wave detector |
| CN108180931A (en) * | 2017-12-28 | 2018-06-19 | 中国科学院半导体研究所 | A kind of terahertz wave detector |
-
2018
- 2018-10-31 CN CN201811292307.8A patent/CN109547717A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140070103A1 (en) * | 2012-09-12 | 2014-03-13 | Stmicroelectronics Sa | Terahertz Imager |
| CN106328754A (en) * | 2015-07-03 | 2017-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Combined terahertz wave detector |
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN108180931A (en) * | 2017-12-28 | 2018-06-19 | 中国科学院半导体研究所 | A kind of terahertz wave detector |
Non-Patent Citations (1)
| Title |
|---|
| ZHAO-YANG LIU: "A CMOS Fully Integrated 860-GHz Terahertz Sensor", 《IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110855916A (en) * | 2019-11-22 | 2020-02-28 | 中国电子科技集团公司第四十四研究所 | Analog signal reading circuit array with variable output channel number and reading method |
| CN110855916B (en) * | 2019-11-22 | 2021-12-24 | 中国电子科技集团公司第四十四研究所 | Analog signal reading circuit array with variable output channel number and reading method |
| CN112230297A (en) * | 2020-09-03 | 2021-01-15 | 广东工业大学 | Detector based on NxM multi-frequency antenna array and SBD array |
| CN112230297B (en) * | 2020-09-03 | 2024-04-09 | 广东工业大学 | Detector based on N×M multi-frequency antenna array and SBD array |
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Application publication date: 20190329 |