CN108495064A - Pixel circuit and image sensor apparatus - Google Patents
Pixel circuit and image sensor apparatus Download PDFInfo
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- CN108495064A CN108495064A CN201810657593.7A CN201810657593A CN108495064A CN 108495064 A CN108495064 A CN 108495064A CN 201810657593 A CN201810657593 A CN 201810657593A CN 108495064 A CN108495064 A CN 108495064A
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- transistor
- pixel circuit
- transmission
- conversion gain
- photodiode
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
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- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 6
- 230000003071 parasitic effect Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
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- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 1
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 1
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- 230000005574 cross-species transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Abstract
The present invention provides a kind of pixel circuit, and the pixel circuit uses multiple transmission transistors：High-conversion-gain transmission transistor and one or more low conversion gain transmission transistors.The pixel circuit includes reset transistor, dual conversion gain transistor, capacitance, high-conversion-gain transmission transistor, low conversion gain transmission transistor and output unit.The output unit includes amplifying transistor and row selecting transistor.The pixel circuit further includes an anti-spilled transistor, is controlled full trap signal.One or more of low conversion gain transmission transistors form one or more transmission branches, are connected respectively to the photodiode.The multiple low conversion gain transmission transistor can be connected respectively to multiple transmission branches, or be sequentially connected to same transmission branch.The present invention also provides a kind of image sensor apparatus including above-mentioned pixel circuit.
Description
Technical field
The present invention relates to image sensing device more particularly to a kind of pixel circuits and image using multiple transmission transistors
Sensor device.
Background technology
It will by light-sensitive element, such as photodiode PD using transmission transistor in common cmos image sensor circuit
Photoelectric effect generate electron-transport arrive floating diffusion nodes FD, Fig. 1 be pixel circuit in the prior art.Imaging sensor fills
It sets in different application environments, such as low light scene and specular scene, the sensitivity of low light scene is relatively weak, in order to improve
The signal read in low light scene can reach the signal of specular scene, the pixel design method of the double gains of generally use.Low
In light field scape, the pixel circuit of imaging sensor is operated under high-conversion-gain pattern, and sensitivity is higher.In specular scene,
The pixel circuit of imaging sensor is operated under low conversion gain mode, and sensitivity is relatively low, but can read more signals.
In the design of big pixel (pel array) image sensor circuit, the full trap signal of photodiode is more, it is necessary to
Large scale transmission transistor completes signal transmission.Other problems, such as the parasitic capacitance meeting of floating diffusion point can be brought in this way
Bigger, conversion gain is also unable to reach very high, can reduce maximum sensitivity, and normal to limit under low light scene makes
With.
To solve the above problems, improving the sensitivity used in low light scene hypograph sensor device, while not increasing
The parasitic capacitance of floating diffusion point improves the conversion gain of circuit, while improving full trap signal control, and the present invention proposes a kind of high
Performing pixel designs circuit and image sensor apparatus.
Invention content
The object of the invention proposes that a kind of pixel circuit, the pixel circuit use multiple transmission transistors：High-conversion-gain
Transmission transistor and one or more low conversion gain transmission transistors, the pixel circuit include：
Reset transistor, drain electrode connection first voltage source, according to reseting controling signal reset circuit and floating diffusion point
Voltage；
Dual conversion gain transistor is connected between the reset transistor and floating diffusion point；
One pole of capacitance, the capacitance is connected between the reset transistor and the dual conversion gain transistor；
Photodiode, for incident light to be transformed into electronics in photoelectric effect；
High-conversion-gain transmission transistor is connected between the photodiode and floating diffusion point, in low light
The electronics transfer for exporting the photodiode under scene is to the floating diffusion point；
One or more low conversion gain transmission transistors, are connected to the photodiode, under low light scene and institute
The electronics transfer that high-conversion-gain transmission transistor together exports the photodiode is stated to export；
Output unit, the output unit include amplifying transistor and row selecting transistor, the leakage of the amplifying transistor
Pole is connected to first voltage source, and drain electrode is connected to the floating diffusion point, and it is brilliant that source electrode output end is connected to the row selection
Body pipe；The pixel circuit is signally attached to output to alignment by the row selecting transistor；The amplifying transistor can be source
Pole follows transistor；
Optionally, the pixel circuit further includes an anti-spilled transistor, is connected to the photodiode, for institute
It states photodiode and carries out full trap control；
Optionally, the anti-spilled transistor is connected to the first voltage source, or is connected to independent the second voltage source；
Optionally, the multiple low conversion gain transmission transistor forms one or more transmission branches, the multiple low
Conversion gain transmission transistor is respectively arranged at different transmission branches, or is set to same transmission branch；It is one or more
A transmission branch is connected respectively to the photodiode；
Optionally, the capacitance is the connection of device capacitor or the reset transistor and the dual conversion gain transistor
The parasitic capacitance of point over the ground；The given voltage that another pole of device capacitor is connected is a given voltage value or ground terminal.
The present invention also provides a kind of image sensor apparatus, described image sensor device includes multiple lines up rows and columns
The pel array that pixel circuit described above is constituted；
Described image sensor device further includes peripheral circuit, and the output of the pel array is controlled and handled.
Pixel circuit and image sensor apparatus proposed by the present invention, the high-conversion-gain transmission transistor under low light scene
Work, can effectively improve conversion gain and the sensitivity of pixel circuit；Under specular scene low conversion gain transmission transistor and
High-conversion-gain transmission transistor all works, being capable of abundant transmission circuit signal.The pixel circuit and image sensing simultaneously
Device device can also be achieved the full trap control to photodiode, and anti-stop signal overflows, and can effectively improve pixel circuit and image
The pixel qualities of sensor device.
Description of the drawings
Fig. 1 is image sensor pixel circuit structure chart in the prior art；
The image element circuit structure figure that Fig. 2 is proposed by the embodiment of the present invention one；
Fig. 3 is the sequence diagram of one pixel circuit of the embodiment of the present invention；
The image element circuit structure figure that Fig. 4 is proposed by the embodiment of the present invention two；And
The image element circuit structure figure that Fig. 5 is proposed by the embodiment of the present invention three.
Specific implementation mode
Content proposed by the invention is described in detail below in conjunction with each attached drawing.Fig. 2 is the embodiment of the present invention one
The image element circuit structure figure proposed, Fig. 3 are the sequence diagram of the pixel circuit of the present embodiment one.
As shown in Figure 2, the high-conversion-gain transmission transistor TX_HCG and low conversion gain transmission transistor TX_
LCG is connected respectively to photodiode PD, and incident light is shifted by the electronics that photodiode PD photoelectric effect generates
Output.High-conversion-gain transmission transistor TX_HCG is connected to floating diffusion point FD, low conversion gain transmission transistor TX_LCG
It is connected to the tie point of reset transistor RST and dual conversion gain transistor DCG.Capacitance C can be device capacitor or reset crystal
The parasitic capacitance of pipe RST and dual conversion gain transistor DCG tie points.It another pole of device capacitor C can be solid according to application connection
Constant voltage or ground connection.Implementation process in conjunction with the circuit sequence that Fig. 3 is provided, the pixel circuit of the embodiment of the present invention one is as follows：
First, reset transistor RST, dual conversion gain transistor DCG, high-conversion-gain transmission transistor TX_HCG and low
The control signal of conversion gain transmission transistor TX_LCG is set to high level, each transistor turns, to two pole of circuit and photoelectricity
Pipe PD is resetted；
It opens light-pulse generator to expose photodiode PD, the control signal of reset transistor RST is set to when end exposure
The control signal of low level, dual conversion gain transistor DCG is set to high level, dual conversion gain transistor DCG conductings, capacitance C
The electric charge transfer of middle storage is to floating diffusion point FD, row selecting transistor RS conductings, when pixel circuit exports low conversion gain
Reference voltage VL0；
The control signal of dual conversion gain transistor DCG is set to low level, and the control signal of row selecting transistor RS is set to
When high level, dual conversion gain transistor DCG shutdown, row selecting transistor RS conductings, pixel circuit export high-conversion-gain
Reference voltage VH0；
Photodiode integral process terminates, and the control signal of high-conversion-gain transmission transistor TX_HCG is set to high electricity
Flat, the control signal of row selecting transistor RS is set to high level, row selecting transistor RS conductings；High-conversion-gain transmission transistor
TX_HCG transfers an electron to floating diffusion point FD, signal voltage VH1 when exporting high-conversion-gain through row selecting transistor RS；
By the control signal of dual conversion gain transistor DCG, the control signal of high-conversion-gain transmission transistor TX_HCG
And the control signal of low conversion gain transmission transistor TX_LCG is all set to high level, dual conversion gain transistor DCG, high conversion
Gain transfer transistor TX_HCG and low conversion gain transmission transistor TX_LCG are respectively turned on, and are transmitted respectively from high-conversion-gain
The charge of transistor TX_HCG and low conversion gain transmission transistor TX_LCG outputs and the electric charge transfer in capacitance C expand to floating
Scatterplot FD；
The control signal of row selecting transistor RS is set to high level, row selecting transistor RS conductings, and pixel circuit is from floating
It spreads point FD and exports low conversion gain signal VL1.
Related operation is carried out to VL0, VL1, VH0 and VH1 respectively, obtains the signal voltage VL under low conversion gain mode
=VL1-VL0, the signal voltage VH=VH1-VH0 under high-conversion-gain pattern.By believing the image under different gains pattern
It number is handled, can get the picture signal of a vertical frame dimension quality.
In pixel circuit application shown in Fig. 2, high-conversion-gain transmission transistor works generally under low light scene, energy
Effectively improve conversion gain and the sensitivity of pixel circuit；Low conversion gain transmission transistor and high conversion increase under specular scene
Beneficial transmission transistor all works, being capable of abundant transmission circuit signal.
Fig. 4 is the pixel circuit that the embodiment of the present invention two proposes, what is different from the first embodiment is that pixel circuit also includes one
Anti-spilled transistor AB, is connected to photodiode PD, is mainly used for controlling the full trap signal of photodiode PD, with
Crosstalk between avoiding spill over from causing pixel influences the picture quality of pixel circuit output.It is described anti-overflow in embodiment two
Go out the voltage source that transistor AB is connected, can be first voltage source VDD identical with reset transistor RST, or be respectively adopted
Independent voltage source.As shown in Figure 4, the voltage source of the anti-spilled transistor AB connections is VDD0, the reset transistor
The voltage source of RST connections is VDD1.The implementation of the specific implementation process of circuit and Fig. 2 and Fig. 3 embodiment one provided in Fig. 4
Journey is similar, no longer separately repeats herein.
Fig. 5 is the pixel circuit that the embodiment of the present invention three proposes, the pixel circuit different from embodiment one and embodiment two
Including multiple low conversion gain transmission transistor TX_LCG transmission branches, two branches as illustrated in the drawing.As shown in Figure 5,
The low conversion gain transmission transistor of two branches is connected respectively to photodiode PD, after being exposed respectively to photodiode PD
The charge that photoelectric effect generates is transmitted.The present invention also has another embodiment, multiple low conversion gain transmission transistors
TX_LCG, which is sequentially connected, to be set in same transmission branch, for example, TX_LCG1, TX_LCG2, TX_LCG3 ... the present embodiment are not given
Go out diagram.
The present invention also proposes a kind of image sensor apparatus including the pixel circuit described in the various embodiments described above.It is described
Include the pixel circuit array provided in the multiple above-mentioned multiple embodiments at row and column of row in image sensor apparatus.Image passes
Sensor arrangement further includes peripheral circuit, and peripheral circuit is mainly used for that the output of pixel circuit is controlled and handled.
Each embodiment provided in embodiment of the present invention, including but not limited to invention content proposed by the invention
Explanation and illustration.Above-described embodiment is only used for the purpose of explanation, is not construed as limiting the invention.To various embodiments of the present invention
The rational revision or adjustment carried out each falls within the context that the present invention is protected.
Claims (14)
1. a kind of pixel circuit, using multiple transmission transistors, which is characterized in that the pixel circuit includes：
Reset transistor, drain electrode connection first voltage source；
Dual conversion gain transistor is connected between the reset transistor and floating diffusion point；
Capacitance is connected between the reset transistor and the dual conversion gain transistor；
Photodiode, for converting the light into electronics in photoelectric effect；
High-conversion-gain transmission transistor is connected between the photodiode and floating diffusion point；
One or more low conversion gain transmission transistors form one or more transmission branches, one or more of transmission
Branch is connected respectively to the photodiode；And
Output unit, the output unit include amplifying transistor and row selecting transistor, and the pixel circuit signal is exported
To alignment.
2. pixel circuit according to claim 1, which is characterized in that the pixel circuit further includes an anti-spilled crystal
Pipe, the anti-spilled transistor are connected to the photodiode.
3. pixel circuit according to claim 1 or 2, which is characterized in that the multiple low conversion gain transmission transistor
It is set to same transmission branch, or is respectively arranged at different transmission branches.
4. pixel circuit according to claim 2, which is characterized in that the anti-spilled transistor is connected to first electricity
Potential source, or it is connected to independent the second voltage source.
5. pixel circuit according to claim 1 or 2, which is characterized in that the amplifying transistor of the output unit is source
Pole follows transistor.
6. pixel circuit according to claim 1 or 2, which is characterized in that the capacitance is device capacitor or the reset
The parasitic capacitance of transistor and the tie point of the dual conversion gain transistor over the ground.
7. pixel circuit according to claim 6, which is characterized in that a pole of the device capacitor is connected to given voltage
Or ground connection.
8. a kind of image sensor apparatus, described image sensor device includes that the multiple pixel circuits to line up rows and columns are constituted
Array, which is characterized in that the pixel circuit includes：
Reset transistor, drain electrode connection first voltage source；
Dual conversion gain transistor is connected between the reset transistor and floating diffusion point；
Capacitance is connected between the reset transistor and the dual conversion gain transistor；
Photodiode, for converting the light into electronics in photoelectric effect；
High-conversion-gain transmission transistor is connected between the photodiode and floating diffusion point；
One or more low conversion gain transmission transistors form one or more transmission branches, one or more of transmission
Branch is connected respectively to the photodiode；
Output unit, the output unit include amplifying transistor and row selecting transistor, and the pixel circuit signal is exported
To alignment；And
Peripheral circuit is controlled and is handled to the pixel circuit.
9. image sensor apparatus according to claim 8, which is characterized in that the pixel circuit further includes one anti-spilled
Transistor, the anti-spilled transistor are connected to the photodiode.
10. image sensor apparatus according to claim 8 or claim 9, which is characterized in that the multiple low conversion gain transmission
Transistor is set to same transmission branch, or is respectively arranged at different transmission branches.
11. image sensor apparatus according to claim 9, which is characterized in that the anti-spilled transistor is connected to institute
First voltage source is stated, or is connected to independent the second voltage source.
12. image sensor apparatus according to claim 8 or claim 9, which is characterized in that the amplification crystal of the output unit
Pipe is source following transistor.
13. image sensor apparatus according to claim 8 or claim 9, which is characterized in that the capacitance is device capacitor or institute
State the parasitic capacitance of the tie point of reset transistor and the dual conversion gain transistor over the ground.
14. image sensor apparatus according to claim 13, a pole of the device capacitor be connected to given voltage or
Ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810657593.7A CN108495064B (en) | 2018-06-20 | 2018-06-20 | Pixel circuit and image sensor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810657593.7A CN108495064B (en) | 2018-06-20 | 2018-06-20 | Pixel circuit and image sensor device |
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| CN108495064B CN108495064B (en) | 2023-12-15 |
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| CN110493546A (en) * | 2019-09-05 | 2019-11-22 | 昆山锐芯微电子有限公司 | Cmos image sensor, pixel unit and its control method |
| CN110996023A (en) * | 2019-12-12 | 2020-04-10 | 思特威(上海)电子科技有限公司 | Clamping method based on reset transistor potential control in pixel circuit |
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