CN103067676A - High dynamic imaging sensor and active pixel thereof - Google Patents
High dynamic imaging sensor and active pixel thereof Download PDFInfo
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- CN103067676A CN103067676A CN2013100168332A CN201310016833A CN103067676A CN 103067676 A CN103067676 A CN 103067676A CN 2013100168332 A CN2013100168332 A CN 2013100168332A CN 201310016833 A CN201310016833 A CN 201310016833A CN 103067676 A CN103067676 A CN 103067676A
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Abstract
The invention discloses a high dynamic imaging sensor and an active pixel thereof. The active pixel comprises a reset transistor, a source following transistor, a row choosing transistor, a plurality of photosensitive elements and a position ranking line. Each photosensitive element is correspondingly connected with a source electrode of a charge transfer transistor. A plurality of grid electrodes of the charge transfer transistor is mutually connected together. A plurality of drain electrodes of the charge transfer transistor are mutually connected together to be used as a floating panel point. Due to the fact that the plurality of photosensitive elements adopt different exposure saturate time, a photoelectricity response curve of the high exposure quantity of the sensor is compressed, the sensitivity of a high exposure quantity pixel is reduced, and thus the dynamic range of the imaging sensor is enlarged.
Description
Technical field
The present invention relates to a kind of imageing sensor, relate in particular to a kind of high-dynamics image transducer and active pixel thereof.
Background technology
Imageing sensor has been widely used in digital camera, cell phone, medicine equipment, automobile and other application scenarios.Particularly make the CMOS(CMOS (Complementary Metal Oxide Semiconductor)) fast development of image sensor technologies, make people to the output image quality of imageing sensor higher requirement arranged.
In the prior art, the structure that the cmos image sensor pixel generally all adopts as shown in Figure 1, employing be cmos image sensor four transistorized active pixels, be also referred to as in the art the 4T active pixel.The components and parts of 4T active pixel comprise: photodiode 101, and charge pass transistor 102, reset transistor 103, transistor 104 and row selecting transistor 105 are followed in the source.Photodiode 101 receives the light of extraneous incident, produce photosignal, turn-on transistor 102, close transistor 102 after photosignal transferred to floating node FD (Floating Diffusing), this photosignal is followed transistor 104 by the source and is detected, open simultaneously row selecting transistor 105, by row bit line 106 signal is read.Wherein, the photosignal amount that produces in photodiode 101 is directly proportional with the incident illumination amount, and then the signal that detects in floating node FD place of transistor 104 is also proportional with the quantity of illumination.
The photoelectric respone of such imageing sensor is linear, is called as linear transducer in this area.The quantity of illumination scope that linear transducer detects is little, particularly be beyond recognition out information in kind under the high lighting environment, can not gather from the half-light thread environment and change to whole signals under the high light thread environment, in the field of business to be called dynamic range little, thereby reduced the output image quality of transducer.
Summary of the invention
High high-dynamics image transducer and the active pixel thereof of quality that the purpose of this invention is to provide a kind of transducer output image.
The objective of the invention is to be achieved through the following technical solutions:
Active pixel of the present invention, comprise that reset transistor, source follow transistor, row selecting transistor and row bit line, also comprise the photo-sensitive cell that places semiconductor substrate more than 2 or 2, the corresponding source electrode that connects a charge pass transistor of each photo-sensitive cell, the grid of a plurality of charge pass transistor interconnects, and a plurality of charge pass transistor drain electrodes interconnect as floating node.
High-dynamics image transducer of the present invention comprises the picture element matrix array, and described picture element matrix array is included in the some above-mentioned active pixel of arranging with matrix-style on vertical and the horizontal direction.
As seen from the above technical solution provided by the invention, high-dynamics image transducer and active pixel thereof that the embodiment of the invention provides, owing to adopted the pixel of a plurality of photo-sensitive cells, compare according to environment with the low light level, under the intense light irradiation environment, photoelectric respone curve when having compressed the high exposure of transducer has reduced the sensitivity of high exposure pixel, has therefore improved the dynamic range of imageing sensor.
Description of drawings
Fig. 1 is the schematic diagram of 4 transistors (4T) active pixel of the cmos image sensor of prior art;
Fig. 2 is the structural representation of active pixel of the present invention;
Fig. 3 is the photoelectricity response curve schematic diagram when active pixel is worked among Fig. 2;
Fig. 4 is the structural representation that adopts high-dynamics image transducer of the present invention.
Embodiment
The below will be described in further detail the embodiment of the invention.
Active pixel of the present invention, its better embodiment is:
Comprise that reset transistor, source follow transistor, row selecting transistor and row bit line, also comprise the photo-sensitive cell that places semiconductor substrate more than 2 or 2, the corresponding source electrode that connects a charge pass transistor of each photo-sensitive cell, the grid of a plurality of charge pass transistor interconnects, and a plurality of charge pass transistor drain electrodes interconnect as floating node.
In a plurality of photo-sensitive cells, the top of at least one photo-sensitive cell is coated with metal level, and the metal level area coverage of different photo-sensitive cells top is different.
The size of a plurality of photo-sensitive cells is identical or not identical.
Described photo-sensitive cell has four, the top of the first photo-sensitive cell 201 is the covering metal layer not, the second photo-sensitive cell 202 tops cover the metal level of 1/2 photo-sensitive cell area, the 3rd photo-sensitive cell 203 tops cover the metal level of 3/4 photo-sensitive cell area, and the 4th photo-sensitive cell 204 tops cover the metal level of 7/8 photo-sensitive cell area.
Described photo-sensitive cell comprises photodiode, PIN type photodiode, part PIN type photodiode or polysilicon gate type photodiode.
High-dynamics image transducer of the present invention, its better embodiment is:
Comprise the picture element matrix array, described picture element matrix array is included in the some above-mentioned active pixel of arranging with matrix-style on vertical and the horizontal direction.
This imageing sensor also comprises pel array control circuit, treatment circuit, memory cell and imput output circuit, and each part is formed on the independent silicon substrate, and is integrated in one independently on the chip.
The present invention is in order to obtain high-quality image in cmos image sensor, start with from the photoelectric respone character of improving the 4T pixel, use comprises the pixel of a plurality of photo-sensitive cells, the exposure saturation time of each photo-sensitive cell is different, thereby the photoelectric respone sensitivity curve when having compressed high lighting environment, postponed the saturation time of pixel, so transducer detects the detailed information in kind under more intense light irradiation environment, promoted the quality of transducer output image.
Specific embodiment:
As shown in Figure 2, correct optimization on the basis of four transistor pixels shown in Figure 1 is decomposed into 4 photo-sensitive cells with 1 photo-sensitive cell, increases simultaneously 3 charge pass transistor, specifically comprises:
The gate terminal TX of 4 charge pass transistor 205～208 and drain electrode end (floating node) FD interconnects respectively; Drain electrode termination power Vdd, the source terminal of reset transistor 209 links to each other with floating node FD, gate terminal is labeled as RX; Drain electrode termination power Vdd, the source terminal that transistor 210 is followed in the source joined with the drain electrode end of row selecting transistor 211, gate terminal links to each other with floating node FD; The source terminal of row selecting transistor 211 links to each other with row bit line 212, gate terminal is labeled as SX.
The top of the first photo-sensitive cell 201 not covering metal shuts out the light, the metal that the second photo-sensitive cell 202 tops cover 1/2 photo-sensitive cell area is used for blocking the incident ray of half, the metal that the 3rd photo-sensitive cell 203 tops cover 3/4 photo-sensitive cell area is used for blocking 3/4 incident ray, and the metal that the 4th photo-sensitive cell 204 tops cover 7/8 photo-sensitive cell area is used for blocking 7/8 incident ray.Above-mentioned photo-sensitive cell size can be identical, can be not identical yet, and the ratio of the relative photo-sensitive cell area of photo-sensitive cell top covering metal also can be other value less than 1.
In the specific embodiment, suppose the big or small identical of above-mentioned photo-sensitive cell 201～204,4 photo-sensitive cell tops in the pixel, the photo-sensitive cell area has covered respectively the metal of different proportion relatively, so the exposure saturation time of each photo-sensitive cell is not identical; The saturation time of 4 photo-sensitive cells sequentially is: the first photo-sensitive cell 201, the second photo-sensitive cell 202, the 3rd photo-sensitive cell 203, the 4th photo-sensitive cell 204, the photosignal sensitivity of pixel is the highest before photo-sensitive cell 201 is saturated, along with the gradually also gradually reduction of saturated sensitivity of photosignal of photo-sensitive cell 201～204, as shown in Figure 3.
In Fig. 3, transverse axis is the pixel exposure time under the fixing light intensity environment, and longer exposure of the time for exposure of pixel is higher, and the longitudinal axis is the semaphore of photo-sensitive cell, and the photosignal amount that longer pixel of the time for exposure of pixel is collected is more; A point expression the first photo-sensitive cell 201 is saturated at time for exposure T place, B point expression the second photo-sensitive cell 202 is saturated at time for exposure 2T place, C point expression the 3rd photo-sensitive cell 203 is saturated at time for exposure 4T place, D point expression the 4th photo-sensitive cell 204 is saturated at time for exposure 8T place, and reach capacity in the whole pixel light signal of telecommunication of D point amount, the picture element signal saturation capacity is labeled as Q.The photosignal sensitivity of pixel is the highest in time for exposure 0～T section, next T～2T time period, 2T～4T time period is minimum in 4T～8T time period sensitivity; Therefore, when long in the pixel exposure time, when namely exposure was high, the photoelectric respone curve was compressed.Upwards prolong along the 0A line segment, obtain the saturation point E that the signal saturation capacity is Q, curve 0E section is the linear segment of the pixel light electroresponse relation of prior art imageing sensor, through calculating that the time for exposure that checking E is ordered is 1.7T.This shows that pixel saturation time of the present invention expands to 8T from the conventional pixel saturation time 1.7T of prior art, the dynamic range of pixel has been brought up to 4.7 times of conventional pixel.Because pixel has collected the in kind detailed information of time for exposure 1.7T under the 8T section high exposure environment, so promoted the image quality of transducer output.
Above-mentioned active pixel can be used for the sensor array 402 of cmos image sensor, as shown in Figure 4, Fig. 4 has specifically shown a kind of cmos image sensor formed according to the present invention, comprise pel array control circuit 401, picture element matrix array 402, and treatment circuit, memory cell and imput output circuit 403.Each element is formed on the independent silicon substrate, and adopts the CMOS manufacturing process of standard to be integrated in one independently on the chip.
The invention has the beneficial effects as follows:
Adopted the pixel of the different a plurality of photo-sensitive cells of exposure saturation time; Compare according to environment with the low light level, under the intense light irradiation environment, the photoelectric respone curve when having compressed the high exposure of transducer has reduced the sensitivity of high exposure pixel, has therefore improved the dynamic range of imageing sensor.Solve prior art and can not gather the problem that changes to the whole signals under the high light thread environment from the half-light thread environment, so that the dynamic range of expanded view image-position sensor and pixel.
The above; only for the better embodiment of the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (7)
1. active pixel, comprise that reset transistor, source follow transistor, row selecting transistor and row bit line, it is characterized in that, also comprise the photo-sensitive cell that places semiconductor substrate more than 2 or 2, the corresponding source electrode that connects a charge pass transistor of each photo-sensitive cell, the grid of a plurality of charge pass transistor interconnects, and a plurality of charge pass transistor drain electrodes interconnect as floating node.
2. active pixel according to claim 1 is characterized in that, in a plurality of photo-sensitive cells, the top of at least one photo-sensitive cell is coated with metal level, and the metal level area coverage of different photo-sensitive cells top is different.
3. active pixel according to claim 2 is characterized in that, the size of a plurality of photo-sensitive cells is identical or not identical.
4. active pixel according to claim 3, it is characterized in that, described photo-sensitive cell has four, the top of the first photo-sensitive cell 201 is the covering metal layer not, the second photo-sensitive cell 202 tops cover the metal level of 1/2 photo-sensitive cell area, the 3rd photo-sensitive cell 203 tops cover the metal level of 3/4 photo-sensitive cell area, and the 4th photo-sensitive cell 204 tops cover the metal level of 7/8 photo-sensitive cell area.
5. active pixel according to claim 1 is characterized in that, described photo-sensitive cell comprises photodiode, PIN type photodiode, part PIN type photodiode or polysilicon gate type photodiode.
6. a high-dynamics image transducer comprises the picture element matrix array, it is characterized in that, described picture element matrix array is included in the described active pixel of some claim 1 to 5 any one of arranging with matrix-style on vertical and the horizontal direction.
7. high-dynamics image transducer according to claim 6, it is characterized in that, this imageing sensor also comprises pel array control circuit, treatment circuit, memory cell and imput output circuit, and each part is formed on the independent silicon substrate, and is integrated in one independently on the chip.
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| CN103491323A (en) * | 2013-09-02 | 2014-01-01 | 上海集成电路研发中心有限公司 | Pixel unit of CMOS image sensor |
| CN103996686A (en) * | 2014-06-10 | 2014-08-20 | 北京思比科微电子技术股份有限公司 | CMOS image sensor pixel capable of improving signal swing and manufacturing method thereof |
| CN104010142A (en) * | 2014-06-12 | 2014-08-27 | 北京思比科微电子技术股份有限公司 | Active pixel, image sensor and control timing sequence thereof |
| CN104135631A (en) * | 2014-08-15 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | CMOS image sensor pixel |
| CN104135633A (en) * | 2014-08-25 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Image sensor pixel with changeable conversion gain and working method thereof |
| CN105206631A (en) * | 2014-06-23 | 2015-12-30 | 上海箩箕技术有限公司 | Photosensitive pixel array, ambient light sensor and distance sensor |
| CN105208301A (en) * | 2015-09-16 | 2015-12-30 | 上海集成电路研发中心有限公司 | Double-conversion-gain pixel unit structure and signal acquisition method thereof |
| CN105208302A (en) * | 2015-09-16 | 2015-12-30 | 上海集成电路研发中心有限公司 | Pixel unit structure and signal acquisition method thereof |
| CN103873787B (en) * | 2014-04-02 | 2017-02-15 | 长春长光辰芯光电技术有限公司 | Large-dynamic-range image sensor image element |
| CN109889735A (en) * | 2019-04-22 | 2019-06-14 | Oppo广东移动通信有限公司 | Pixel circuit and imaging sensor |
| CN112565642A (en) * | 2020-11-27 | 2021-03-26 | 上海华力微电子有限公司 | CIS sensor with linear logarithmic output |
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| CN104135633A (en) * | 2014-08-25 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Image sensor pixel with changeable conversion gain and working method thereof |
| CN105208302A (en) * | 2015-09-16 | 2015-12-30 | 上海集成电路研发中心有限公司 | Pixel unit structure and signal acquisition method thereof |
| CN105208301A (en) * | 2015-09-16 | 2015-12-30 | 上海集成电路研发中心有限公司 | Double-conversion-gain pixel unit structure and signal acquisition method thereof |
| CN105208302B (en) * | 2015-09-16 | 2018-06-22 | 上海集成电路研发中心有限公司 | Pixel cell structure and its signal acquisition method |
| CN105208301B (en) * | 2015-09-16 | 2018-06-22 | 上海集成电路研发中心有限公司 | The pixel cell structure and its signal acquisition method of dual conversion gain |
| CN109889735A (en) * | 2019-04-22 | 2019-06-14 | Oppo广东移动通信有限公司 | Pixel circuit and imaging sensor |
| CN112565642A (en) * | 2020-11-27 | 2021-03-26 | 上海华力微电子有限公司 | CIS sensor with linear logarithmic output |
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Effective date of registration: 20170508 Address after: 300308 Tianjin Xisi Tianjin Airport Economic Zone, Binhai Road No. 168 and 1-2-502 square Patentee after: Tianjin Antai Microelectronic Technology Co., Ltd. Address before: 100085 Beijing city Haidian District on the five Street No. 7 building two Room 201 Hao Hai Patentee before: Beijing SuperPix Micro Technology Limited |