CN104010142A - Active pixel, image sensor and control timing sequence thereof - Google Patents
Active pixel, image sensor and control timing sequence thereof Download PDFInfo
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- CN104010142A CN104010142A CN201410262327.6A CN201410262327A CN104010142A CN 104010142 A CN104010142 A CN 104010142A CN 201410262327 A CN201410262327 A CN 201410262327A CN 104010142 A CN104010142 A CN 104010142A
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Abstract
The invention discloses an active pixel, an image sensor and a control timing sequence of the active pixel. The active pixel comprises a first photosensitive element arranged in a semiconductor substrate, a transmission transistor located between the first photosensitive element and a floating node, and a first reset transistor connected with the floating node and further comprises a source tracking transistor connected with the floating node, a row selecting transistor and a column positioning line. The active pixel further comprises a second photosensitive element, wherein the second photosensitive element is connected with the floating node through an auxiliary capacitor and is further connected with a second reset transistor. The capacitance on the floating node can be automatically adjusted according to the image sensor and the illumination quantity of incident light on the pixel; compared with a low luminous environment, the capacitance on the floating node is increased in a high luminous environment, and therefore the signal saturation capacity of the floating node can be increased, the dynamic range of the image sensor is widened, and meanwhile, the signal-to-noise ratio is increased.
Description
Technical field
The present invention relates to a kind of imageing sensor, relate in particular to a kind of active pixel and imageing sensor and control sequential thereof.
Background technology
Imageing sensor has been widely used in digital camera, cell phone, medicine equipment, automobile and other application scenarios.Particularly manufacture the fast development of CMOS (CMOS (Complementary Metal Oxide Semiconductor)) image sensor technologies, make people have higher requirement to the output image quality of imageing sensor.
In the prior art, the floating node place of cmos image sensor pixel generally all adopts fixed capacity, as shown in Figure 1, is to adopt the transistorized active pixel of cmos image sensor four, in the art also referred to as 4T active pixel.The components and parts of 4T active pixel comprise: transistor 104 and row selecting transistor 105 are followed in photodiode 101, transmission transistor 102, reset transistor 103, source.Photodiode 101 receives the light of extraneous incident, produce photosignal, open transmission transistor 102, photosignal is transferred to the rear closing transmission transistor 102 of floating node FD (Floating Diffusing), this photosignal is followed transistor 104 by source and is detected, open row selecting transistor 105 simultaneously, by row bit line 106, signal is read.Wherein, the photosignal amount producing in photodiode 101 is directly proportional to incident illumination amount, and the signal that transistor 104 detects in floating node FD place is also proportional with the quantity of illumination.
The photoelectric respone of above-mentioned imageing sensor of the prior art is linear, is called as linear transducer in this area.The quantity of illumination scope that linear transducer detects is little, particularly under high lighting environment, be beyond recognition out information in kind, can not gather from half-light thread environment and change to the whole signals high light thread environment, in the field of business to be called dynamic range little, thereby reduced the output image quality of transducer.
Summary of the invention
The object of this invention is to provide a kind of floating node place electric capacity have can automatic regulation function active pixel and imageing sensor and control sequential thereof, solve prior art and can not gather the problem that changes to the whole signals high light thread environment from half-light thread environment, the dynamic range of expanded view image-position sensor and pixel.
The object of the invention is to be achieved through the following technical solutions:
Active pixel of the present invention, comprise the first reset transistor that is placed in the first photo-sensitive cell of semiconductor substrate, transmission transistor between described the first photo-sensitive cell and floating node, is connected floating node, also comprise that the source that connects floating node follows transistor, row selecting transistor and row bit line, described active pixel also comprises the second photo-sensitive cell, described the second photo-sensitive cell is connected with described floating node by auxiliary capacitor, and described the second photo-sensitive cell is also connected with the second reset transistor;
Described the second photo-sensitive cell is used for testing incident illumination amount;
Described the second reset transistor for removing the electric charge of described the second photo-sensitive cell potential well before exposure starts;
Described auxiliary capacitor is for automatically adjusting its size according to the received quantity of illumination of described the second photo-sensitive cell.
Imageing sensor of the present invention is arranged some active pixels with matrix-style in vertical and horizontal direction, and described active pixel is above-mentioned active pixel.
The control sequential of above-mentioned active pixel of the present invention, comprises step:
First, open described transmission transistor, the first reset transistor and the second reset transistor simultaneously, remove the electric charge in described the first photo-sensitive cell and the second photo-sensitive cell potential well;
Then, close described transmission transistor, the first reset transistor and the second reset transistor, described the first photo-sensitive cell and the second photo-sensitive cell start exposure;
When end exposure, remove after the electric charge of described floating node, the photoelectricity electric charge in described the first photo-sensitive cell is transferred to described floating node;
Described in the incident illumination amount control that the capacitance of described floating node receives by described the second photo-sensitive cell, the source drain potential of auxiliary capacitor regulates just and automatically.
As seen from the above technical solution provided by the invention, the active pixel that the embodiment of the present invention provides and imageing sensor and control sequential thereof, because active pixel also comprises the second photo-sensitive cell, the second photo-sensitive cell is connected with floating node by auxiliary capacitor, the second photo-sensitive cell is also connected with the second reset transistor, can automatically regulate according to the incident illumination amount in imageing sensor and pixel the capacitance at floating node place; With low lighting environment comparison, under high lighting environment, thereby the electric capacity at floating node place increases the signal saturated capacity increase that makes floating node, has improved the dynamic range of imageing sensor, has also increased signal to noise ratio simultaneously.
Brief description of the drawings
Fig. 1 is the schematic diagram of four transistors (4T) active pixel of the cmos image sensor of prior art;
Fig. 2 is the schematic diagram of four transistors (4T) active pixel of cmos image sensor in the embodiment of the present invention;
Fig. 3 is the sequencing control schematic diagram of 4T active pixel work in the embodiment of the present invention;
Fig. 4 be in the embodiment of the present invention floating node electric capacity in active pixel with the variation relation schematic diagram of incident illumination amount.
Fig. 5 is the imageing sensor schematic diagram that adopts active pixel in the embodiment of the present invention.
Embodiment
To be described in further detail the embodiment of the present invention below.
Active pixel of the present invention, its preferably embodiment be:
Comprise the first reset transistor that is placed in the first photo-sensitive cell of semiconductor substrate, transmission transistor between described the first photo-sensitive cell and floating node, is connected floating node, also comprise that the source that connects floating node follows transistor, row selecting transistor and row bit line, described active pixel also comprises the second photo-sensitive cell, described the second photo-sensitive cell is connected with described floating node by auxiliary capacitor, and described the second photo-sensitive cell is also connected with the second reset transistor;
Described the second photo-sensitive cell is used for testing incident illumination amount;
Described the second reset transistor for removing the electric charge of described the second photo-sensitive cell potential well before exposure starts;
Described auxiliary capacitor is for automatically adjusting its size according to the received quantity of illumination of described the second photo-sensitive cell.
Described the first photo-sensitive cell and the second photo-sensitive cell comprise following any one or more element: photodiode, PIN type photodiode, part PIN type photodiode or polysilicon gate type photodiode.
Described auxiliary capacitor is the transistor capacitance that can be used for as MOS transistor work.
The source drain terminal of described auxiliary capacitor is connected with described the second photo-sensitive cell, grid is connected with described floating node.
Imageing sensor of the present invention is being arranged some active pixels with matrix-style in vertical and horizontal direction, its preferably embodiment be:
Described active pixel is above-mentioned active pixel.
The control sequential of above-mentioned active pixel of the present invention, its preferably embodiment be:
Comprise step:
First, open described transmission transistor, the first reset transistor and the second reset transistor simultaneously, remove the electric charge in described the first photo-sensitive cell and the second photo-sensitive cell potential well;
Then, close described transmission transistor, the first reset transistor and the second reset transistor, described the first photo-sensitive cell and the second photo-sensitive cell start exposure;
When end exposure, remove after the electric charge of described floating node, the photoelectricity electric charge in described the first photo-sensitive cell is transferred to described floating node;
Described in the incident illumination amount control that the capacitance of described floating node receives by described the second photo-sensitive cell, the source drain potential of auxiliary capacitor regulates just and automatically.
The present invention is in cmos image sensor, in order to obtain the image of high-quality, start with from the photoelectric respone character of improving 4T pixel, photoelectric respone sensitivity curve while compressing high lighting environment, increase the photoelectricity electric charge saturated capacity at the floating node FD place of pixel, postpone the saturation time of pixel, expand the dynamic range of transducer.For example, in the time of low lighting environment, the electric capacity of floating node FD is 1.2fF, and the voltage swing of floating node FD is 1V, and electric charge saturated capacity is 7491 so, lucky when saturated the corresponding quantity of illumination be Q
1; If in the time of high lighting environment, the electric capacity of FD is increased to 2fF, and electric charge saturated capacity is increased to 12484, lucky when saturated the corresponding quantity of illumination be Q
2; Thereby sensor pixel can detect illumination zone and increase to 1.67 original (Q
2/ Q
1=12484/7491=1.67) doubly, dynamic range expands original 1.67 times to.The image sensor pixel of working has in this way detected the detailed information how in kind under high lighting environment, thereby has promoted the image quality of transducer output.
Specific embodiment:
As shown in Figure 2, on the basis of four transistor pixels shown in Fig. 1, part components and parts are added, the grid end of auxiliary transistor (electric capacity) 203 is connected with floating node FD, its source drain terminal SD is connected with the second photodiode 201, and the second reset transistor 202 can be made the operation of removing electric charge in the second photodiode 201 before exposure starts; Capacitor C
arepresent the auxiliary capacitor of auxiliary transistor 203, capacitor C
acomprise device source leakage overlap capacitance C
vwith device grid oxygen capacitor C
xtwo parts; Capacitor C
frepresent capacitor C
aoutside other part floating nodes FD parasitic capacitance; The wherein total capacitance C of FD
fDequal C
aelectric capacity and C
felectric capacity and.
In the present embodiment, adopt PIN type photodiode in pixel, and photoelectricity electric charge is N-type electronics, all crystals pipe is N-type cmos device.In Fig. 2, the TX marking is the grid of transmission transistor 102, and RX is the grid of the first reset transistor 103, SX is the grid of row selecting transistor 105, AUX is the grid of the second reset transistor 202, and Vdd is supply voltage, and 106 is the passage of row bit line as output photoelectric signal.Wherein, if grid is high voltage, for example Vdd, represents to open this transistor; If grid is low-voltage, for example gnd, represents to close this transistor.
Implement the pixel sequencing control schematic diagram of the present embodiment as shown in Figure 3, the operation that sequential 301 completes is, before exposure starts, to remove the electronics in the first photodiode 101 and the second photodiode 201 potential wells simultaneously, potential well electromotive force raises, and is called reset photodiode; Concrete operations are, at t
0moment is set to high level by low level by TX, RX and AUX simultaneously, turn-on transistor 102,103 and 202, and SX keeps low level, T simultaneously
01after period, at t
1tX, RX and AUX are set to low level by moment simultaneously, closes transistor 102,103 and 202, SX and keep low level, and sequential 301 has operated, and the first and second photodiodes start exposure simultaneously.
The operation that second sequential 302 completes is, removes the electronics at FD place before end exposure, and the rising of FD electromotive force, is called reset FD; Concrete operations are, at t
2moment is set to high level by RX by low level, turn-on transistor 103, and TX, AUX and SX keep low level, T simultaneously
23after period, at t
3rX is set to low level by moment, and TX, AUX and SX keep low level, and sequential 302 has operated.After sequential operation 302 completes, at t
3with t
4in time period, complete the operation of read reset signal, do not do details here and set forth.
The 3rd operation that sequential 303 completes is that the photoelectricity electric transmission that the first photodiode 101 is produced is to FD; Concrete operations are, at t
4moment is set to high level by TX and SX by low level, turn-on transistor 102 and 105, and RX and AUX keep low level, T simultaneously
45after period, TX and SX are put back to low level and put, close transistor 102 and 105, sequential 303 has operated, the first photodiode 101 end exposures.Wherein, at T
45in later stage period, follow by source photosignal that transistor 104 detects and be read out circuit by row bit line 106 and read and record.When exposure cycle finishes, the photoelectricity amount of electrons producing in the second photodiode 201 is directly proportional to incident illumination amount, and the electromotive force at the leakage SD place, source of transistor 203 in this photoelectricity amount of electrons control.
The key of implementing the present embodiment is FD total capacitance C
fDat t
3moment can be followed the number of incident illumination amount and automatically be regulated its capacitance, as shown in Figure 4.If the quantity of illumination is less than E
1, the electronics producing in photodiode 201 is few, and the source drain terminal electromotive force of auxiliary capacitor transistor 203 is high, and this transistor is operated in cut-off region, and capacitor C A only has C
vcomponent, C
min=C
f+ C
v; If the quantity of illumination is greater than E
2, the electronics producing in photodiode 201 is many, has reduced the source drain terminal electromotive force of auxiliary capacitor transistor 203, and transistor 203 is operated in strong inversion district, and capacitor C A comprises C
vand C
xtwo parts, C
max=C
f+ C
v+ C
x; If the quantity of illumination is in E
1with E
2between, transistor 203 is operated in weak inversion regime, along with the increase capacitor C A of incident illumination amount is gradually by C
vincrease to C
v+ C
x.FD capacitance increases, under fixing voltage swing, electronics saturated capacity also can increase same multiple, supposes that the electron amount that photodiode 101 produces is greater than FD electronics saturated capacity here, and the dynamic range of pixel can increase to original multiple (M) and can be expressed as so:
M＝C
max/C
min
＝(C
F+C
V+C
X)/(C
F+C
V)
＝1+C
X/(C
F+C
V)
As everyone knows, when MOS transistor is operated in strong inversion district, C
xmuch larger than C
vif, C
falso design is reasonable, can suppose C
xfor 1.2fF, C
ffor 1fF, C
vfor 0.2fF, the dynamic range of pixel can increase to original 2 times so.The increase of pixel dynamic range, pixel has collected the detailed information under more high lighting environment, thereby has improved the quality of transducer output image.
Above-mentioned active pixel can be used for the sensor array 403 of cmos image sensor, as shown in Figure 5.Fig. 5 has specifically shown a kind of cmos image sensor formed according to the present invention, comprises pel array control circuit 401, picture element matrix array 403, treatment circuit, memory cell and imput output circuit 404, and logical AND gate circuit 402.Each element is formed on independent silicon substrate, and adopts the CMOS manufacturing process of standard to be integrated in one independently on chip.
The above; only for preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (6)
1. an active pixel, comprise the first reset transistor that is placed in the first photo-sensitive cell of semiconductor substrate, transmission transistor between described the first photo-sensitive cell and floating node, is connected floating node, also comprise that the source that connects floating node follows transistor, row selecting transistor and row bit line, it is characterized in that, described active pixel also comprises the second photo-sensitive cell, described the second photo-sensitive cell is connected with described floating node by auxiliary capacitor, and described the second photo-sensitive cell is also connected with the second reset transistor;
Described the second photo-sensitive cell is used for testing incident illumination amount;
Described the second reset transistor for removing the electric charge of described the second photo-sensitive cell potential well before exposure starts;
Described auxiliary capacitor is for automatically adjusting its size according to the received quantity of illumination of described the second photo-sensitive cell.
2. active pixel according to claim 1, it is characterized in that, described the first photo-sensitive cell and the second photo-sensitive cell comprise following any one or more element: photodiode, PIN type photodiode, part PIN type photodiode or polysilicon gate type photodiode.
3. active pixel according to claim 1, is characterized in that, described auxiliary capacitor is the transistor capacitance that can be used for as MOS transistor work.
4. active pixel according to claim 3, is characterized in that, the source drain terminal of described auxiliary capacitor is connected with described the second photo-sensitive cell, grid is connected with described floating node.
5. an imageing sensor is arranged some active pixels with matrix-style in vertical and horizontal direction, it is characterized in that, described active pixel is the active pixel described in claim 1 to 4 any one.
6. a control sequential for the active pixel described in claim 1 to 4 any one, is characterized in that, comprises step:
First, open described transmission transistor, the first reset transistor and the second reset transistor simultaneously, remove the electric charge in described the first photo-sensitive cell and the second photo-sensitive cell potential well;
Then, close described transmission transistor, the first reset transistor and the second reset transistor, described the first photo-sensitive cell and the second photo-sensitive cell start exposure;
When end exposure, remove after the electric charge of described floating node, the photoelectricity electric charge in described the first photo-sensitive cell is transferred to described floating node;
Described in the incident illumination amount control that the capacitance of described floating node receives by described the second photo-sensitive cell, the source drain potential of auxiliary capacitor regulates just and automatically.
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| CN111866414A (en) * | 2020-07-15 | 2020-10-30 | 大连理工大学 | High-dynamic image sensor pixel structure and time sequence control method |
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| CN104010142B (en) | 2018-03-27 |
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