CN108495064B - Pixel circuit and image sensor device - Google Patents
Pixel circuit and image sensor device Download PDFInfo
- Publication number
- CN108495064B CN108495064B CN201810657593.7A CN201810657593A CN108495064B CN 108495064 B CN108495064 B CN 108495064B CN 201810657593 A CN201810657593 A CN 201810657593A CN 108495064 B CN108495064 B CN 108495064B
- Authority
- CN
- China
- Prior art keywords
- transistor
- conversion gain
- pixel circuit
- image sensor
- transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 75
- 230000005540 biological transmission Effects 0.000 claims abstract description 39
- 238000012546 transfer Methods 0.000 claims abstract description 30
- 239000003990 capacitor Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims description 17
- 230000009977 dual effect Effects 0.000 claims description 17
- 230000003071 parasitic effect Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 238000004378 air conditioning Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 1
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Abstract
The present invention provides a pixel circuit employing a plurality of transfer transistors: a high conversion gain pass transistor and one or more low conversion gain pass transistors. The pixel circuit comprises a reset transistor, a double conversion gain transistor, a capacitor, a high conversion gain transmission transistor, a low conversion gain transmission transistor and an output unit. The output unit includes an amplifying transistor and a row selecting transistor. The pixel circuit also includes an anti-overflow transistor for controlling the full well signal. The one or more low conversion gain transfer transistors form one or more transfer branches, each connected to the photodiode. The plurality of low conversion gain transmission transistors may be connected to a plurality of transmission branches, respectively, or sequentially connected to the same transmission branch. The invention also provides an image sensor device comprising the pixel circuit.
Description
Technical Field
The present invention relates to an image sensor device, and more particularly, to a pixel circuit employing a plurality of transfer transistors and an image sensor device.
Background
In a typical CMOS image sensor circuit, a transfer transistor is used to transfer electrons generated by a photo-effect from a photosensitive element, such as a photodiode PD, to a floating diffusion node FD, and fig. 1 is a prior art pixel circuit. In different application environments, such as a low light scene and a high light scene, the sensitivity of the image sensor device in the low light scene is relatively weak, and in order to improve the signal read out in the low light scene to reach the signal in the high light scene, a dual-gain pixel design mode is generally adopted. In a low light scene, the pixel circuit of the image sensor operates in a high conversion gain mode, and the sensitivity is high. In high light scenes, the pixel circuits of the image sensor operate in a low conversion gain mode with relatively low sensitivity, but are able to read out more signals.
In large pixel (pixel array) image sensor circuit designs, where the photodiodes have many full well signals, large-sized transfer transistors are required to complete the signal transfer. This can cause other problems, such as a large parasitic capacitance at the floating diffusion point, a high conversion gain, and reduced maximum sensitivity, thereby limiting normal use in low light scenes.
In order to solve the problems, the invention provides a high-performance pixel design circuit and an image sensor device, which are used for improving the sensitivity of the image sensor device in a low light scene, not increasing the parasitic capacitance of a floating diffusion point, improving the conversion gain of a circuit and improving the full-well signal control.
Disclosure of Invention
The invention aims to provide a pixel circuit, which adopts a plurality of transmission transistors: a high conversion gain pass transistor and one or more low conversion gain pass transistors, the pixel circuit comprising:
a reset transistor, the drain of which is connected with a first voltage source, and resets the circuit and the floating diffusion point voltage according to a reset control signal;
a dual conversion gain transistor connected between the reset transistor and a floating diffusion point;
a capacitor having one pole connected between the reset transistor and the dual conversion gain transistor;
a photodiode for converting incident light into electrons in a photoelectric effect;
a high conversion gain transfer transistor connected between the photodiode and the floating diffusion point, for transferring electrons output from the photodiode to the floating diffusion point in a low light scene;
one or more low conversion gain transfer transistors connected to the photodiode to transfer electrons output from the photodiode together with the high conversion gain transfer transistor in a low light scene;
an output unit including an amplifying transistor having a drain connected to a first voltage source, a drain connected to the floating diffusion point, and a source output connected to the row select transistor; the row select transistor connects the pixel circuit signal to an output to a column line; the amplifying transistor may be a source follower transistor;
optionally, the pixel circuit further includes an anti-overflow transistor connected to the photodiode for performing full well control on the photodiode;
optionally, the anti-overflow transistor is connected to the first voltage source or to a separate second voltage source;
optionally, the plurality of low conversion gain transmission transistors form one or more transmission branches, and the plurality of low conversion gain transmission transistors are respectively arranged in different transmission branches or in the same transmission branch; the one or more transmission branches are respectively connected to the photodiodes;
optionally, the capacitor is a device capacitor or a parasitic capacitor of a connection point of the reset transistor and the dual conversion gain transistor to ground; the appointed voltage connected with the other electrode of the device capacitor is an appointed voltage value or a ground terminal.
The invention also provides an image sensor device which comprises a pixel array formed by a plurality of pixel circuits which are arranged in rows and columns;
the image sensor device further includes peripheral circuitry to control and process the output of the pixel array.
The pixel circuit and the image sensor device provided by the invention work under a low light scene, and the high conversion gain transmission transistor can effectively improve the conversion gain and the sensitivity of the pixel circuit; the low conversion gain transmission transistor and the high conversion gain transmission transistor work in a high light scene, and can fully transmit circuit signals. Meanwhile, the pixel circuit and the image sensor device can also realize full-well control of the photodiode, prevent signal overflow and effectively improve the pixel quality of the pixel circuit and the image sensor device.
Drawings
FIG. 1 is a block diagram of a pixel circuit of an image sensor in the prior art;
FIG. 2 is a block diagram of a pixel circuit according to an embodiment of the present invention;
FIG. 3 is a timing diagram of a pixel circuit according to an embodiment of the invention;
fig. 4 is a block diagram of a pixel circuit according to a second embodiment of the present invention; a kind of electronic device with high-pressure air-conditioning system
Fig. 5 is a block diagram of a pixel circuit according to a third embodiment of the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings. Fig. 2 is a block diagram of a pixel circuit according to a first embodiment of the present invention, and fig. 3 is a timing diagram of the pixel circuit according to the first embodiment of the present invention.
As shown in fig. 2, the high conversion gain transfer transistor tx_hcg and the low conversion gain transfer transistor tx_lcg are respectively connected to the photodiode PD, and transfer and output electrons generated by the photoelectric effect of the photodiode PD from the incident light. The high conversion gain transfer transistor tx_hcg is connected to the floating diffusion FD, and the low conversion gain transfer transistor tx_lcg is connected to the connection point of the reset transistor RST and the dual conversion gain transistor DCG. The capacitor C may be a device capacitor or a parasitic capacitance of the junction of the reset transistor RST and the dual conversion gain transistor DCG. The other pole of the device capacitance C may be connected to a fixed voltage or ground, depending on the application. In conjunction with the circuit timing shown in fig. 3, the implementation procedure of the pixel circuit according to the first embodiment of the present invention is as follows:
firstly, a reset transistor RST, a double conversion gain transistor DCG, a high conversion gain transmission transistor TX_HCG and a low conversion gain transmission transistor TX_LCG are all set to be high level, and each transistor is conducted to reset a circuit and a photodiode PD;
the pulse light source is turned on to expose the photodiode PD, a control signal of the reset transistor RST is set to be low level when the exposure is finished, a control signal of the double conversion gain transistor DCG is set to be high level, the double conversion gain transistor DCG is conducted, charges stored in the capacitor C are transferred to the floating diffusion point FD, the row selection transistor RS is conducted, and the pixel circuit outputs a reference voltage VL0 when the conversion gain is low;
the control signal of the dual conversion gain transistor DCG is set to a low level, the control signal of the row selection transistor RS is set to a high level, the dual conversion gain transistor DCG is turned off, the row selection transistor RS is turned on, and the pixel circuit outputs a reference voltage VH0 when the conversion gain is high;
the photodiode integration process is finished, the control signal of the high conversion gain transmission transistor TX_HCG is set to be high level, the control signal of the row selection transistor RS is set to be high level, and the row selection transistor RS is conducted; the high conversion gain transfer transistor tx_hcg transfers electrons to the floating diffusion FD, outputting the high conversion gain time signal voltage VH1 via the row selection transistor RS;
setting the control signal of the dual conversion gain transistor DCG, the control signal of the high conversion gain transmission transistor tx_hcg and the control signal of the low conversion gain transmission transistor tx_lcg to be high levels, respectively turning on the dual conversion gain transistor DCG, the high conversion gain transmission transistor tx_hcg and the low conversion gain transmission transistor tx_lcg, and respectively transferring charges output by the high conversion gain transmission transistor tx_hcg and the low conversion gain transmission transistor tx_lcg and charges in the capacitor C to the floating diffusion point FD;
the control signal of the row select transistor RS is set to a high level, the row select transistor RS is turned on, and the pixel circuit outputs a low conversion gain signal VL1 from the floating diffusion FD.
Correlation operations are performed on VL0, VL1, VH0, and VH1, respectively, to obtain signal voltages vl=vl 1-VL0 in the low conversion gain mode, and signal voltages vh=vh 1-VH0 in the high conversion gain mode. By processing the image signals in different gain modes, a frame of high-quality image signal can be obtained.
In the application of the pixel circuit shown in fig. 2, the high conversion gain transmission transistor generally works under the low light scene, so that the conversion gain and the sensitivity of the pixel circuit can be effectively improved; the low conversion gain transmission transistor and the high conversion gain transmission transistor work in a high light scene, and can fully transmit circuit signals.
Fig. 4 is a pixel circuit according to a second embodiment of the present invention, which is different from the first embodiment in that the pixel circuit further includes an anti-overflow transistor AB connected to the photodiode PD, and is mainly used for controlling the full-well signal of the photodiode PD to avoid crosstalk between pixels caused by the overflow signal, which affects the image quality output by the pixel circuit. In the second embodiment, the voltage source connected to the anti-overflow transistor AB may be the same as the first voltage source VDD of the reset transistor RST, or separate voltage sources may be used. As shown in fig. 4, the voltage source connected to the anti-overflow transistor AB is VDD0, and the voltage source connected to the reset transistor RST is VDD1. The implementation of the circuit in fig. 4 is similar to that of the first embodiment shown in fig. 2 and 3, and will not be described again.
Fig. 5 is a pixel circuit according to a third embodiment of the present invention, which includes a plurality of low conversion gain transmission transistors tx_lcg transmission branches, as two branches are shown in the figure, unlike the first and second embodiments. As shown in fig. 5, the low conversion gain transfer transistors of the two branches are connected to the photodiodes PD, respectively, and transfer charges generated by the photoelectric effect after the exposure of the photodiodes PD, respectively. In yet another embodiment of the present invention, a plurality of low conversion gain transmission transistors tx_lcg are sequentially connected and arranged in the same transmission branch, for example, tx_lcg1, tx_lcg2, tx_lcg3 and … are not shown in the present example.
The present invention also provides an image sensor device including the pixel circuit described in each of the above embodiments. The image sensor device includes the pixel circuit array provided in the above-described embodiments in which a plurality of rows and columns are arranged. The image sensor device further includes peripheral circuits for mainly controlling and processing the outputs of the pixel circuits.
Examples given in the embodiments of the present invention include, but are not limited to, the explanation and illustration of the summary of the invention presented. The above examples are for illustrative purposes only and are not to be construed as limiting the invention. Reasonable revisions or modifications may be made to the embodiments of the invention that fall within the scope of the invention.
Claims (14)
1. A pixel circuit employing a plurality of transfer transistors, the pixel circuit comprising:
a reset transistor, the drain of which is connected with a first voltage source;
a dual conversion gain transistor connected between the reset transistor and a floating diffusion point;
a capacitor connected between the reset transistor and the dual conversion gain transistor;
a photodiode for converting light into electrons in a photoelectric effect;
a high conversion gain transfer transistor connected between the photodiode and the floating diffusion point;
one or more low conversion gain transmission transistors forming one or more transmission branches, one ends of the one or more transmission branches being respectively connected to the photodiodes, and the other ends of the one or more transmission branches being respectively connected to connection points of the reset transistor and the dual conversion gain transistor; a kind of electronic device with high-pressure air-conditioning system
And an output unit including an amplifying transistor and a row selecting transistor, outputting the pixel circuit signal to a column line.
2. The pixel circuit of claim 1, further comprising a spill-resistant transistor, the spill-resistant transistor coupled to the photodiode.
3. A pixel circuit according to claim 1 or 2, wherein the plurality of low conversion gain transfer transistors are arranged in the same transfer branch or in different transfer branches respectively.
4. The pixel circuit of claim 2, wherein the anti-overflow transistor is connected to the first voltage source or to a separate second voltage source.
5. A pixel circuit according to claim 1 or 2, wherein the amplifying transistor of the output unit is a source follower transistor.
6. A pixel circuit according to claim 1 or 2, wherein the capacitance is a device capacitance or a parasitic capacitance of a junction of the reset transistor and the dual conversion gain transistor to ground.
7. The pixel circuit of claim 6, wherein one pole of the device capacitance is connected to a specified voltage or ground.
8. An image sensor device comprising an array of a plurality of pixel circuits arranged in rows and columns, the pixel circuits comprising:
a reset transistor, the drain of which is connected with a first voltage source;
a dual conversion gain transistor connected between the reset transistor and a floating diffusion point;
a capacitor connected between the reset transistor and the dual conversion gain transistor;
a photodiode for converting light into electrons in a photoelectric effect;
a high conversion gain transfer transistor connected between the photodiode and the floating diffusion point;
one or more low conversion gain transmission transistors forming one or more transmission branches, one ends of the one or more transmission branches being respectively connected to the photodiodes, and the other ends of the one or more transmission branches being respectively connected to connection points of the reset transistor and the dual conversion gain transistor;
an output unit including an amplifying transistor and a row selecting transistor, outputting the pixel circuit signal to a column line; a kind of electronic device with high-pressure air-conditioning system
And the peripheral circuit is used for controlling and processing the pixel circuit.
9. The image sensor device of claim 8, wherein the pixel circuit further comprises a spill-resistant transistor, the spill-resistant transistor being connected to the photodiode.
10. The image sensor device according to claim 8 or 9, wherein the plurality of low conversion gain transfer transistors are disposed in the same transfer branch or are disposed in different transfer branches, respectively.
11. The image sensor device of claim 9, wherein the anti-blooming transistor is connected to the first voltage source or to a separate second voltage source.
12. The image sensor device according to claim 8 or 9, wherein the amplifying transistor of the output unit is a source follower transistor.
13. The image sensor apparatus according to claim 8 or 9, wherein the capacitance is a device capacitance or a parasitic capacitance of a connection point of the reset transistor and the dual conversion gain transistor to ground.
14. The image sensor apparatus of claim 13, one pole of the device capacitance connected to a specified voltage or ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810657593.7A CN108495064B (en) | 2018-06-20 | 2018-06-20 | Pixel circuit and image sensor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810657593.7A CN108495064B (en) | 2018-06-20 | 2018-06-20 | Pixel circuit and image sensor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108495064A CN108495064A (en) | 2018-09-04 |
| CN108495064B true CN108495064B (en) | 2023-12-15 |
Family
ID=63342947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810657593.7A Active CN108495064B (en) | 2018-06-20 | 2018-06-20 | Pixel circuit and image sensor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108495064B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110493546B (en) * | 2019-09-05 | 2021-08-17 | 锐芯微电子股份有限公司 | CMOS image sensor, pixel unit and control method thereof |
| CN110996023B (en) * | 2019-12-12 | 2022-05-06 | 思特威(上海)电子科技股份有限公司 | Clamping method based on reset transistor potential control in pixel circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1833429A (en) * | 2003-06-11 | 2006-09-13 | 微米技术有限公司 | Dual conversion gain imagers |
| CN102970493A (en) * | 2011-08-30 | 2013-03-13 | 全视科技有限公司 | Multilevel reset voltage for multi-conversion gain image sensor |
| CN104144305A (en) * | 2013-05-10 | 2014-11-12 | 江苏思特威电子科技有限公司 | Dual-conversion gain imaging device and imaging method thereof |
| CN208227176U (en) * | 2018-06-20 | 2018-12-11 | 上海晔芯电子科技有限公司 | Pixel circuit and image sensor apparatus |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8077237B2 (en) * | 2007-10-16 | 2011-12-13 | Aptina Imaging Corporation | Method and apparatus for controlling dual conversion gain signal in imaging devices |
| US8026968B2 (en) * | 2008-04-11 | 2011-09-27 | Aptina Imaging Corporation | Method and apparatus providing dynamic boosted control signal for a pixel |
| TWI456990B (en) * | 2011-04-08 | 2014-10-11 | Pixart Imaging Inc | High dynamic range imager circuit and method for reading high dynamic range image |
| US20130256510A1 (en) * | 2012-03-29 | 2013-10-03 | Omnivision Technologies, Inc. | Imaging device with floating diffusion switch |
| US9900481B2 (en) * | 2015-11-25 | 2018-02-20 | Semiconductor Components Industries, Llc | Imaging pixels having coupled gate structure |
| US10044960B2 (en) * | 2016-05-25 | 2018-08-07 | Omnivision Technologies, Inc. | Systems and methods for detecting light-emitting diode without flickering |
| US9942492B2 (en) * | 2016-06-16 | 2018-04-10 | Semiconductor Components Industries, Llc | Image sensors having high dynamic range functionalities |
| JP6832649B2 (en) * | 2016-08-17 | 2021-02-24 | ブリルニクス インク | Solid-state image sensor, solid-state image sensor drive method, and electronic equipment |
| US10110840B2 (en) * | 2016-10-25 | 2018-10-23 | Semiconductor Components Industries, Llc | Image sensor pixels with overflow capabilities |
-
2018
- 2018-06-20 CN CN201810657593.7A patent/CN108495064B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1833429A (en) * | 2003-06-11 | 2006-09-13 | 微米技术有限公司 | Dual conversion gain imagers |
| CN102970493A (en) * | 2011-08-30 | 2013-03-13 | 全视科技有限公司 | Multilevel reset voltage for multi-conversion gain image sensor |
| CN104144305A (en) * | 2013-05-10 | 2014-11-12 | 江苏思特威电子科技有限公司 | Dual-conversion gain imaging device and imaging method thereof |
| CN208227176U (en) * | 2018-06-20 | 2018-12-11 | 上海晔芯电子科技有限公司 | Pixel circuit and image sensor apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 如何为视频监控应用选择合适的图像传感器;Cliff Cheng;;集成电路应用(第11期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108495064A (en) | 2018-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10608101B2 (en) | Detection circuit for photo sensor with stacked substrates | |
| US7256382B2 (en) | Solid state imaging device, method of driving solid state imaging device and image pickup apparatus | |
| US9247170B2 (en) | Triple conversion gain image sensor pixels | |
| US7511275B2 (en) | Semiconductor device, and control method and device for driving unit component of semiconductor device | |
| US9848140B2 (en) | Horizontal banding reduction with ramp generator isolation in an image sensor | |
| US20130256510A1 (en) | Imaging device with floating diffusion switch | |
| US8687246B2 (en) | Solid-state imaging apparatus and imaging system | |
| US8969775B2 (en) | High dynamic range pixel having a plurality of amplifier transistors | |
| KR102553988B1 (en) | Solid-state imaging element, and imaging device | |
| US20130113966A1 (en) | Solid-state imaging apparatus | |
| US20120314109A1 (en) | Solid-state imaging device and camera | |
| CN108419032B (en) | HDR image sensor pixel structure supporting multiple exposure modes and imaging system | |
| JP6413401B2 (en) | Solid-state image sensor | |
| TW201904269A (en) | Low noise complementary gold-oxygen half-image sensor with stacked architecture | |
| US8604407B2 (en) | Dual conversion gain pixel methods, systems, and apparatus | |
| US9172893B2 (en) | Solid-state imaging device and imaging apparatus | |
| US10827143B2 (en) | CMOS image sensor clamping method with divided bit lines | |
| TW202025713A (en) | Solid-state imaging device and electronic apparatus | |
| CN108495064B (en) | Pixel circuit and image sensor device | |
| CN208227176U (en) | Pixel circuit and image sensor apparatus | |
| US20120267695A1 (en) | Solid state imaging device | |
| US10979657B2 (en) | Image sensor circuit with reduced noise interference and control method thereof | |
| US10560647B2 (en) | Driver circuit, driving method, active pixel sensor, image sensor, and electronic device | |
| US20240089623A1 (en) | Image sensor with high dynamic range and low noise | |
| EP3445039B1 (en) | Detection circuit for photo sensor with stacked substrates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room 612, 6th floor, No. 111 Building, Xiangke Road, Shanghai Pudong New Area Free Trade Pilot Area, 201203 Applicant after: Siteway (Shanghai) Electronic Technology Co.,Ltd. Address before: Room 612, 6th floor, No. 111 Building, Xiangke Road, Shanghai Pudong New Area Free Trade Pilot Area, 201203 Applicant before: SHANGHAI YE XIN ELECTRONIC TECHNOLOGY CO.,LTD. |
|
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room 612, 6th floor, No. 111 Building, Xiangke Road, Shanghai Pudong New Area Free Trade Pilot Area, 201203 Applicant after: Starway (Shanghai) Electronic Technology Co.,Ltd. Address before: Room 612, 6th floor, No. 111 Building, Xiangke Road, Shanghai Pudong New Area Free Trade Pilot Area, 201203 Applicant before: Siteway (Shanghai) Electronic Technology Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |