CN112216655A - LTCC-based SiP packaging shell and preparation method thereof - Google Patents
LTCC-based SiP packaging shell and preparation method thereof Download PDFInfo
- Publication number
- CN112216655A CN112216655A CN202011210055.7A CN202011210055A CN112216655A CN 112216655 A CN112216655 A CN 112216655A CN 202011210055 A CN202011210055 A CN 202011210055A CN 112216655 A CN112216655 A CN 112216655A
- Authority
- CN
- China
- Prior art keywords
- ltcc
- film layer
- metal
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title abstract description 22
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000010410 layer Substances 0.000 claims abstract description 115
- 229910052751 metal Inorganic materials 0.000 claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 81
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000004020 conductor Substances 0.000 claims abstract description 38
- 229910052737 gold Inorganic materials 0.000 claims abstract description 36
- 239000010931 gold Substances 0.000 claims abstract description 36
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 35
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052709 silver Inorganic materials 0.000 claims abstract description 34
- 239000004332 silver Substances 0.000 claims abstract description 34
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 33
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 18
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 239000002344 surface layer Substances 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 238000005219 brazing Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 4
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 4
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 239000011241 protective layer Substances 0.000 abstract description 3
- 238000013461 design Methods 0.000 description 7
- 229910002065 alloy metal Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses an LTCC-based SiP packaging shell and a preparation method thereof, wherein the SiP packaging shell comprises an LTCC substrate, a metal enclosure frame fixed on the top of the LTCC substrate and a metal cover plate fixed on the top of the metal enclosure frame; the LTCC substrate comprises a ceramic substrate and composite metal wiring layers symmetrically and fixedly arranged at the top and the bottom of the ceramic substrate; the inner part and the surface layer of the ceramic substrate are provided with thick film silver conductor wiring, and the composite metal wiring layer is sequentially provided with a nickel film layer, a palladium film layer and a gold film layer from inside to outside. According to the invention, the thick-film silver conductor wiring on the surface layer of the ceramic substrate is used as an adhesion layer and a soldered stress buffer layer, the nickel film layer is used as a soldered corrosion-resistant layer, and the gold film layer is used as a weldable layer and a protective layer for preventing metal oxidation, so that the SiP packaging shell has a stable structure and excellent sealing reliability. In addition, the palladium film layer is added between the nickel film layer and the gold film layer, so that the thickness and the use amount of gold can be effectively reduced, and the cost is reduced.
Description
Technical Field
The invention belongs to the technical field of integrated circuit packaging, and particularly relates to an LTCC-based SiP packaging shell and a preparation method thereof.
Background
SiP (System in a Package) is a packaging technology that preferentially assembles a plurality of active electronic components having different functions and optional passive devices into a standard Package to realize a certain System or subsystem function. Compared with a metal package housing, an LTCC (Low Temperature Cofired Ceramic) based SiP package housing has the advantages of small insertion loss, small volume, high integration level, light weight and the like, and becomes a hotspot of SiP technology and product research. However, the LTCC-based SiP package has the following problems, which limit its mass application:
(1) the cost is high: in order to meet the technical requirements of gold wire bonding interconnection, moisture resistance, welding resistance and the like of a chip of the packaging shell, the LTCC substrate has to use expensive metal materials such as a thick-film gold conductor, a thick-film palladium alloy or a thick-film platinum alloy and the like, so that the cost of the LTCC packaging shell is greatly increased.
(2) Poor sealing performance: because the thick film conductor on the surface of the LTCC substrate has poor solder corrosion resistance, after the metal enclosure frame is brazed on the LTCC substrate, the phenomenon of air leakage easily occurs in a welding area, and the sealing failure is caused.
Disclosure of Invention
In view of the deficiencies of the prior art, it is an object of the present invention to provide an LTCC based SiP package housing.
In order to achieve the purpose, the invention adopts the technical scheme that:
an LTCC-based SiP packaging shell comprises an LTCC substrate, a metal enclosure frame fixed to the top of the LTCC substrate and a metal cover plate fixed to the top of the metal enclosure frame; the LTCC substrate comprises a ceramic substrate and composite metal wiring layers symmetrically and fixedly arranged at the top and the bottom of the ceramic substrate; the composite metal wiring layer is sequentially provided with a nickel film layer, a palladium film layer and a gold film layer from inside to outside.
Furthermore, the thickness of the thick-film silver conductor wiring is 5-20 μm, the thickness of the nickel film layer is 1-10 μm, the thickness of the palladium film layer is 0.05-0.2 μm, and the thickness of the gold film layer is 0.1-0.5 μm.
Furthermore, the metal enclosure frame is made of 4J29 alloy or 4J42 alloy; the surface of the metal enclosure frame is plated with a nickel film layer and a gold film layer from inside to outside in sequence.
Furthermore, the metal enclosure frame is fixedly connected with the LTCC substrate through solder brazing. And the metal enclosure frame and the LTCC substrate are connected in a good air-tight manner by brazing and fixing. The solder is made of gold-germanium alloy, gold-tin alloy, lead-tin alloy or tin-silver-copper alloy.
Furthermore, the material of the metal cover plate is 4J29 alloy or 4J42 alloy, and the surface of the metal cover plate is plated with a nickel film layer and a gold film layer from inside to outside in sequence. The metal cover plate is fixedly connected with the metal enclosure frame in a parallel sealing welding or tin soldering mode and is enclosed with the metal enclosure frame to form a gas sealing cavity.
Furthermore, the number of the metal surrounding frame and the metal cover plate is at least one. When the number of the metal enclosing frame and the number of the metal cover plates are one, an airtight cavity is formed above the LTCC substrate; when the number of the metal enclosing frame and the metal cover plate is multiple, a plurality of air-tight cavities are formed above the LTCC substrate.
Another object of the present invention is to provide a method for preparing the LTCC-based SiP package housing, comprising the following steps:
s1, printing thick film silver conductor interconnection through holes, thick film silver conductor circuit wiring and thick film silver conductor circuit wiring patterns on each layer of LTCC green chip by adopting a thick film process according to the design patterns;
s2, sequentially laminating the plurality of layers of LTCC green tiles printed with the patterns into a substrate green body, and sintering to prepare the LTCC substrate comprising the plurality of layers of thick-film silver conductor wiring and passive elements;
s3, plating a nickel film layer, a palladium film layer and a gold film layer on the surface of the thick-film silver conductor wiring layer on the surface layer of the LTCC substrate in sequence by adopting a chemical plating method, thereby preparing a composite metal wiring layer;
s4, welding a metal enclosing frame on the top of the LTCC substrate, and enclosing the metal enclosing frame and the LTCC substrate to form an accommodating cavity with a certain space;
and S5, after assembling various active devices on the LTCC substrate 1, welding a metal cover plate 7 on the top of the metal enclosure frame, and enclosing the metal cover plate 7, the metal enclosure frame and the LTCC substrate to form an airtight cavity, so that the manufacture is completed.
Compared with the prior art, the invention has the beneficial effects that:
(1) the cost is low: according to the invention, the thick-film silver conductor with relatively low cost is used as the conductor material of the LTCC substrate multilayer circuit wiring, so that the cost of the LTCC substrate SiP packaging shell can be greatly reduced, and compared with the packaging shell adopting the thick-film gold conductor material, the cost of a typical product can be reduced to one tenth of the cost of the original product.
(2) The leakproofness is good: according to the invention, the thick-film silver conductor wiring on the surface layer of the ceramic substrate is used as an adhesion layer and a soldered stress buffer layer, the nickel film layer is used as a soldered corrosion-resistant layer, and the gold film layer is used as a weldable layer and a protective layer for preventing metal oxidation, so that the LTCC-based SiP packaging shell has a stable structure and excellent sealing reliability.
(3) The method is suitable for various assembly processes: according to the invention, the palladium film layer is added between the nickel film layer and the gold film layer, so that the thickness and the usage amount of gold can be effectively reduced, the cost is reduced, the black nickel phenomenon on the surface of the packaging shell is avoided, and the SiP packaging shell can simultaneously meet the assembly process requirements of gold wire bonding and tin soldering welding.
Drawings
Fig. 1 is a schematic view of a first structure of a SiP package according to the present invention;
FIG. 2 is a schematic diagram of a second structure of a SiP package according to the present invention;
in the figure: 1-ceramic substrate, 2-thick film silver conductor wiring, 3-nickel film layer, 4-palladium film layer, 5-gold film layer, 6-metal enclosure frame, 7-metal cover plate and 8-welding flux.
Detailed Description
The invention is further described with reference to the following figures and examples. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the present invention, "fixed" and "fixed" mean that two components connected to each other are fixed together, and are generally fixed together by welding or the like. The terms "top," "bottom," "inner," "outer," and the like, refer to an orientation or positional relationship relative to one another as illustrated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must be in a particular orientation, constructed and operated in a particular orientation, and are therefore not to be construed as limiting the present invention. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
An LTCC-based SiP packaging shell comprises an LTCC substrate, a metal enclosure frame fixed to the top of the LTCC substrate and a metal cover plate fixed to the top of the metal enclosure frame; the LTCC substrate comprises a ceramic substrate and composite metal wiring layers symmetrically and fixedly arranged at the top and the bottom of the ceramic substrate; the composite metal wiring layer is sequentially provided with a nickel film layer, a palladium film layer and a gold film layer from inside to outside. According to the invention, the thick-film silver conductor wiring on the surface layer of the ceramic substrate is used as an adhesion layer and a soldered stress buffer layer, the nickel film layer is used as a soldered corrosion-resistant layer, and the gold film layer is used as a weldable layer and a protective layer for preventing metal oxidation, so that the LTCC-based SiP packaging shell has a stable structure and excellent sealing reliability. In addition, the palladium film layer is added between the nickel film layer and the gold film layer, so that the thickness and the usage amount of gold can be effectively reduced, the cost is reduced, the black nickel phenomenon on the surface of the packaging shell is avoided, and the SiP packaging shell can simultaneously meet the assembly process requirements of gold wire bonding and tin soldering welding.
Preferably, the ceramic substrate may be a U.S. Dupont 951 ceramic substrate, a U.S. Dupont 9K7 ceramic substrate, or a domestic model ceramic substrate.
Preferably, the thick film silver conductor wiring is 5-20 μm thick, the nickel film layer is 1-10 μm thick, the palladium film layer is 0.05-0.2 μm thick, and the gold film layer is 0.1-0.5 μm thick.
Preferably, the metal enclosure frame is made of 4J29 alloy or 4J42 alloy; the surface of the metal enclosure frame is plated with a nickel film layer and a gold film layer from inside to outside in sequence.
Preferably, the metal enclosure frame is fixedly connected with the LTCC substrate through solder brazing; the solder is made of gold-germanium alloy, gold-tin alloy, lead-tin alloy or tin-silver-copper alloy. And the metal enclosure frame and the LTCC substrate are connected in a good air-tight manner by brazing and fixing.
Preferably, the material of the metal cover plate is 4J29 alloy or 4J42 alloy; the metal cover plate is fixedly connected with the metal enclosure frame in a parallel seal welding or tin soldering mode and forms a gas-tight sealing cavity with the metal enclosure frame in an enclosing mode; the surface of the metal cover plate is plated with a nickel film layer and a gold film layer from inside to outside in sequence.
Preferably, the number of the metal surrounding frame and the metal cover plate is at least one. When the number of the metal enclosure frame and the metal cover plate is one as shown in fig. 1, a hermetic chamber is formed above the LTCC substrate. When the number of the metal enclosing frame and the metal cover plate is multiple, a plurality of air-tight cavities are formed above the LTCC substrate. As shown in fig. 2, two airtight cavities are formed above the LTCC substrate.
The manufacturing method of the LTCC-based SiP packaging shell comprises the following steps:
the preparation method of the LTCC-based SiP packaging shell comprises the following steps:
s1, printing thick film silver conductor interconnection through holes, thick film silver conductor circuit wiring and thick film silver conductor circuit wiring patterns on each layer of LTCC green chip by adopting a thick film process according to the design patterns; it is understood that the thick film process is conventional in the art, and the specific process will vary according to the material and design requirements, which are conventional in the art and therefore not limited in detail herein.
S2, sequentially laminating the plurality of layers of LTCC green tiles printed with the patterns into a substrate green body, and sintering to prepare the LTCC substrate comprising the plurality of layers of thick-film silver conductor wiring and passive elements;
s3, plating a nickel film layer, a palladium film layer and a gold film layer on the surface of the thick-film silver conductor wiring layer on the surface layer of the LTCC substrate in sequence by adopting a chemical plating method, thereby preparing a composite metal wiring layer; it is understood that electroless plating is well within the skill of the art and may be tailored to the metal being plated, and thus, is not specifically limited thereto.
S4, welding a metal enclosing frame on the top of the LTCC substrate, and enclosing the metal enclosing frame and the LTCC substrate to form an accommodating cavity with a certain space;
and S5, after assembling various active devices on the LTCC substrate 1, welding a metal cover plate 7 on the top of the metal enclosure frame, and enclosing the metal cover plate 7, the metal enclosure frame and the LTCC substrate to form an airtight cavity, so that the manufacture is completed.
The invention is illustrated by the following specific examples:
example 1
S1, as shown in figure 1, printing and manufacturing a thick film silver conductor interconnection through hole, a thick film silver conductor circuit wiring and a thick film silver conductor pattern on 10 layers of U.S. Dupont 9K7 type LTCC green porcelain sheets by adopting a thick film process according to a design pattern;
s2, laminating 10 layers of LTCC green ceramic sheets printed with patterns according to a design sequence to form a substrate green body, sintering the substrate green body in air at 850 ℃, and cutting the substrate green body into the LTCC substrate 1 which has the external dimension of 10 mm multiplied by 1 mm and comprises a plurality of layers of thick film silver conductor wires 2 and passive elements;
s3, chemically plating a nickel film layer 3, a palladium film layer 4 and a gold film layer 5 on the surface of the thick-film silver conductor wiring 2 on the surface of the LTCC substrate 1 in sequence, and controlling plating technological parameters to enable the thickness of the nickel film layer 3 to be 3 micrometers to 5 micrometers, the thickness of the palladium film layer 4 to be 0.1 micrometer to 0.2 micrometer, and the thickness of the gold film layer 5 to be 0.1 micrometer to 0.2 micrometer.
S4, soldering a 4J29 alloy metal enclosure frame 6 with the external dimension of 9.5 mm multiplied by 1 mm and the surface of which is plated with a nickel and gold film layer with an LTCC substrate 1 by using gold-tin alloy solder 8 in nitrogen at the temperature of 350 ℃ to form a containing cavity;
s5, after assembling various active devices on the LTCC substrate 1, welding a 4J29 alloy metal cover plate 7 with the outline size of 9.5 mm multiplied by 0.15 mm and the surface coated with a nickel and gold film layer and a 4J29 alloy metal enclosure frame 6 welded on the LTCC substrate 1 together in a parallel seal welding mode to finally manufacture the LTCC-based SiP package.
Example two:
s1, as shown in figure 2, printing and manufacturing a thick film silver conductor interconnection through hole, thick film silver conductor circuit wiring and a thick film silver conductor pattern on a certain type of domestic LTCC green ceramic chip with 15 layers according to a design pattern by adopting a thick film process;
s2, laminating 15 layers of LTCC green tiles printed with patterns according to the design sequence to form a substrate green body, sintering the substrate green body in air at 850 ℃, and cutting the substrate green body into the LTCC substrate 1 which has the external dimension of 20 mm multiplied by 15 mm multiplied by 1.5 mm and comprises a plurality of layers of thick film silver conductor wiring 2 and passive elements;
s3, chemically plating a nickel film layer 3, a palladium film layer 4 and a gold film layer 5 on the surface of the thick-film silver conductor wiring 2 on the surface of the LTCC substrate 1 in sequence, and controlling plating technological parameters to enable the thickness of the nickel film layer 3 to be 5 micrometers to 8 micrometers, the thickness of the palladium film layer 4 to be 0.1 micrometer to 0.15 micrometer, and the thickness of the gold film layer 5 to be 0.1 micrometer to 0.3 micrometer.
S4, soldering two 4J42 alloy metal enclosure frames 6 with the outline dimensions of 5 mm multiplied by 1 mm and the surfaces of which are plated with nickel and gold film layers with LTCC substrate 1 by using tin-silver-copper alloy solder 8 in air at the temperature of 260 ℃ to form two airtight cavities;
and S5, after assembling various active devices on the LTCC substrate 1, welding two 4J42 alloy metal cover plates 7 with the outline dimensions of 5 mm multiplied by 0.2 mm and the surfaces of which are plated with nickel and gold film layers and a 4J42 alloy metal surrounding frame 6 welded on the LTCC substrate 1 together in a soldering mode to finally manufacture the LTCC-based SiP packaging shell.
The above description is only exemplary of the present invention and should not be taken as limiting the invention, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An LTCC-based SiP package housing, characterized in that: the LTCC substrate, the metal enclosure frame fixed on the top of the LTCC substrate and the metal cover plate fixed on the top of the metal enclosure frame are included; the LTCC substrate comprises a ceramic substrate and composite metal wiring layers symmetrically and fixedly arranged at the top and the bottom of the ceramic substrate; the composite metal wiring layer is sequentially provided with a nickel film layer, a palladium film layer and a gold film layer from inside to outside.
2. The LTCC based SiP package housing of claim 1, wherein: the thick film silver conductor wiring is 5-20 microns thick, the nickel film layer is 1-10 microns thick, the palladium film layer is 0.05-0.2 microns thick, and the gold film layer is 0.1-0.5 microns thick.
3. The LTCC based SiP package housing of claim 1, wherein: the metal enclosure frame is made of 4J29 alloy or 4J42 alloy; the surface of the metal enclosure frame is plated with a nickel film layer and a gold film layer from inside to outside in sequence.
4. The LTCC based SiP package housing of claim 1, wherein: the metal enclosure frame is fixedly connected with the LTCC substrate through solder brazing.
5. The LTCC-based SiP package housing of claim 4, wherein: the solder is made of gold-germanium alloy, gold-tin alloy, lead-tin alloy or tin-silver-copper alloy.
6. The LTCC based SiP package housing of claim 1, wherein: the metal cover plate is made of 4J29 alloy or 4J42 alloy.
7. The LTCC based SiP package housing of claim 6, wherein: the metal cover plate is fixedly connected with the metal enclosure frame in a parallel sealing welding or tin soldering mode and is enclosed with the metal enclosure frame to form a gas sealing cavity.
8. The LTCC based SiP package housing of claim 6, wherein: the surface of the metal cover plate is plated with a nickel film layer and a gold film layer from inside to outside in sequence.
9. The LTCC based SiP package housing of claim 1, wherein: the number of the metal surrounding frame and the metal cover plate is at least one.
10. A method of making an LTCC based SiP package housing according to any of claims 1-9, wherein: the method comprises the following steps:
s1, printing and manufacturing thick film silver conductor interconnection through holes, thick film silver conductor circuit wiring and thick film silver conductor circuit wiring patterns on each layer of LTCC green ceramic chip by adopting a thick film process;
s2, sequentially laminating the multilayer LTCC green ceramic sheets into a substrate green body, and sintering to obtain the LTCC substrate comprising multilayer thick-film silver conductor wiring and passive elements;
s3, plating a nickel film layer, a palladium film layer and a gold film layer on the surface of the thick-film silver conductor wiring layer on the surface layer of the LTCC substrate in sequence by adopting a chemical plating method, thereby preparing a composite metal wiring layer;
s4, welding a metal enclosing frame on the top of the LTCC substrate, and enclosing the metal enclosing frame and the LTCC substrate to form an accommodating cavity;
and S5, after assembling various active devices on the LTCC substrate, welding a metal cover plate on the top of the metal enclosure frame, and enclosing the metal cover plate, the metal enclosure frame and the LTCC substrate to form an airtight cavity, so that the manufacture is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011210055.7A CN112216655A (en) | 2020-11-03 | 2020-11-03 | LTCC-based SiP packaging shell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011210055.7A CN112216655A (en) | 2020-11-03 | 2020-11-03 | LTCC-based SiP packaging shell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112216655A true CN112216655A (en) | 2021-01-12 |
Family
ID=74058041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011210055.7A Pending CN112216655A (en) | 2020-11-03 | 2020-11-03 | LTCC-based SiP packaging shell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112216655A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112382616A (en) * | 2020-11-11 | 2021-02-19 | 合肥圣达电子科技实业有限公司 | Electronic packaging shell and preparation method thereof |
| CN113871117A (en) * | 2021-09-29 | 2021-12-31 | 东莞市东思电子技术有限公司 | Low-cost long-life thick-film resistor plate for oil level sensor and manufacturing method thereof |
| CN114260533A (en) * | 2021-11-30 | 2022-04-01 | 中国电子科技集团公司第五十五研究所 | Method for air sealing cover of cavity type pipe cap millimeter wave module |
-
2020
- 2020-11-03 CN CN202011210055.7A patent/CN112216655A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112382616A (en) * | 2020-11-11 | 2021-02-19 | 合肥圣达电子科技实业有限公司 | Electronic packaging shell and preparation method thereof |
| CN113871117A (en) * | 2021-09-29 | 2021-12-31 | 东莞市东思电子技术有限公司 | Low-cost long-life thick-film resistor plate for oil level sensor and manufacturing method thereof |
| CN114260533A (en) * | 2021-11-30 | 2022-04-01 | 中国电子科技集团公司第五十五研究所 | Method for air sealing cover of cavity type pipe cap millimeter wave module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112216655A (en) | LTCC-based SiP packaging shell and preparation method thereof | |
| JP3009788B2 (en) | Package for integrated circuit | |
| US20100270669A1 (en) | Surface mount package with ceramic sidewalls | |
| US5111277A (en) | Surface mount device with high thermal conductivity | |
| US4821151A (en) | Hermetically sealed package | |
| CN213026100U (en) | LTCC-based SiP packaging shell | |
| CN110797308A (en) | Ceramic leadless chip type packaging shell with leads and power device | |
| CN108962846B (en) | Packaging structure of thick film hybrid integrated circuit and manufacturing method thereof | |
| CN114050130A (en) | CSOP type ceramic shell, amplifying filter and manufacturing method | |
| JPH11162780A (en) | Laminated ceramic capacitor combination and manufacture of the same | |
| JP2005039168A (en) | Ceramic package and tantalum electrolytic capacitor using the same | |
| JP3724028B2 (en) | Metal containers and packages | |
| CN209766401U (en) | Ceramic shell for packaging four diodes and replacing SOP8 plastic packaged device in situ | |
| CN113745168A (en) | Metal ceramic shell for TO-252 packaging and preparation method | |
| JP3377850B2 (en) | Surface mount type crystal oscillator and manufacturing method thereof | |
| CN215582263U (en) | Packaging tube shell | |
| JP2002076193A (en) | Semiconductor element storing package and package mounting board | |
| JP3447043B2 (en) | Package for electronic components | |
| JPH0258257A (en) | Semiconductor package with leads | |
| CN112349656A (en) | System-in-package structure and manufacturing method thereof | |
| JP2005252121A (en) | Package for storing semiconductor element and method for manufacturing the same | |
| JPH0736952B2 (en) | Surface coating structure of metallized metal layer | |
| JPH06140527A (en) | Sealing device component for semiconductor | |
| JP2002311303A (en) | Package for optical communication | |
| JP2000114441A (en) | Multilayer metal plate and its manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |