CN112180696B - 检测装置、曝光装置和物品制造方法 - Google Patents

检测装置、曝光装置和物品制造方法 Download PDF

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Publication number
CN112180696B
CN112180696B CN202010622439.3A CN202010622439A CN112180696B CN 112180696 B CN112180696 B CN 112180696B CN 202010622439 A CN202010622439 A CN 202010622439A CN 112180696 B CN112180696 B CN 112180696B
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China
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detectors
detector
mark
marks
controller
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Chinese (zh)
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CN112180696A (zh
Inventor
山口涉
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Geophysics And Detection Of Objects (AREA)
CN202010622439.3A 2019-07-01 2020-07-01 检测装置、曝光装置和物品制造方法 Active CN112180696B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019123134A JP7328809B2 (ja) 2019-07-01 2019-07-01 検出装置、露光装置、および物品製造方法
JP2019-123134 2019-07-01

Publications (2)

Publication Number Publication Date
CN112180696A CN112180696A (zh) 2021-01-05
CN112180696B true CN112180696B (zh) 2024-06-18

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CN202010622439.3A Active CN112180696B (zh) 2019-07-01 2020-07-01 检测装置、曝光装置和物品制造方法

Country Status (6)

Country Link
US (1) US11079692B2 (https=)
JP (1) JP7328809B2 (https=)
KR (1) KR102756369B1 (https=)
CN (1) CN112180696B (https=)
SG (1) SG10202005801XA (https=)
TW (1) TWI781419B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
EP4020086A1 (en) * 2020-12-28 2022-06-29 ASML Netherlands B.V. A metrology apparatus and a metrology method
JP2022117091A (ja) * 2021-01-29 2022-08-10 キヤノン株式会社 計測装置、リソグラフィ装置及び物品の製造方法
JP7729734B2 (ja) * 2021-05-14 2025-08-26 キヤノントッキ株式会社 成膜装置、プログラム、位置検知精度の評価方法及び電子デバイスの製造方法
JP7600070B2 (ja) * 2021-10-12 2024-12-16 キヤノン株式会社 マーク検出装置、露光装置および物品製造方法
US12259660B2 (en) 2021-10-26 2025-03-25 Industrial Technology Research Institute Inspection method and inspection platform for lithography
TWI801012B (zh) * 2021-10-26 2023-05-01 財團法人工業技術研究院 用於微影製程的檢測方法與檢測平台
CN116107171A (zh) * 2021-11-10 2023-05-12 佳能株式会社 信息处理方法、光刻装置、存储介质及物品制造方法
JP7834460B2 (ja) * 2021-12-06 2026-03-24 キヤノン株式会社 検出装置、基板処理装置、及び物品の製造方法
JP7817841B2 (ja) 2022-01-18 2026-02-19 キヤノン株式会社 検出装置、検出方法、露光装置及び物品の製造方法
JP2023124596A (ja) * 2022-02-25 2023-09-06 キヤノン株式会社 検出方法、検出装置、リソグラフィ装置、および物品の製造方法
CN114756002A (zh) * 2022-04-08 2022-07-15 苏州威达智电子科技有限公司 一种采用微型控制器的多功能检测设备及其控制系统
KR102711897B1 (ko) * 2022-11-09 2024-09-27 이재준 비전 얼라인먼트 시스템 및 이를 이용한 스테이지 이동시 진동 및 흔들림에 대한 오차보정방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201809914A (zh) * 2006-08-31 2018-03-16 日商尼康股份有限公司 曝光裝置及方法、以及元件製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209190B2 (ja) * 1991-07-10 2001-09-17 株式会社ニコン 露光方法
US5654553A (en) * 1993-06-10 1997-08-05 Nikon Corporation Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate
JP4402418B2 (ja) * 2003-10-08 2010-01-20 キヤノン株式会社 露光装置およびデバイス製造方法
JP2005175400A (ja) * 2003-12-15 2005-06-30 Canon Inc 露光装置
JP2006310683A (ja) 2005-05-02 2006-11-09 Nikon Corp 調整方法
SG10201407218XA (en) 2006-09-01 2015-01-29 Nippon Kogaku Kk Movable Body Drive Method And Movable Body Drive System, Pattern Formation Method And Apparatus, Exposure Method And Apparatus, And Device Manufacturing Method
JP5120691B2 (ja) 2007-08-24 2013-01-16 株式会社ニコン マーク検出方法及び装置、露光方法及び装置、並びにデバイス製造方法
JP2009054736A (ja) 2007-08-24 2009-03-12 Nikon Corp マーク検出方法及び装置、位置制御方法及び装置、露光方法及び装置、並びにデバイス製造方法
JP5494755B2 (ja) 2012-08-03 2014-05-21 株式会社ニコン マーク検出方法及び装置、位置制御方法及び装置、露光方法及び装置、並びにデバイス製造方法
JP6462993B2 (ja) * 2014-04-02 2019-01-30 キヤノン株式会社 露光装置および物品製造方法
CN105527795B (zh) * 2014-09-28 2018-09-18 上海微电子装备（集团）股份有限公司 曝光装置及离焦倾斜误差补偿方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP2017215556A (ja) 2016-06-02 2017-12-07 株式会社ニコン マーク検出装置、露光装置、デバイス製造方法、及びマーク検出方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201809914A (zh) * 2006-08-31 2018-03-16 日商尼康股份有限公司 曝光裝置及方法、以及元件製造方法

Also Published As

Publication number Publication date
SG10202005801XA (en) 2021-02-25
KR20210003045A (ko) 2021-01-11
JP2021009230A (ja) 2021-01-28
US11079692B2 (en) 2021-08-03
KR102756369B1 (ko) 2025-01-20
CN112180696A (zh) 2021-01-05
US20210003930A1 (en) 2021-01-07
JP7328809B2 (ja) 2023-08-17
TW202102949A (zh) 2021-01-16
TWI781419B (zh) 2022-10-21

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