CN112174643B - 一种微波陶瓷材料及用该材料制成的介质谐振器 - Google Patents

一种微波陶瓷材料及用该材料制成的介质谐振器 Download PDF

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CN112174643B
CN112174643B CN202011097434.XA CN202011097434A CN112174643B CN 112174643 B CN112174643 B CN 112174643B CN 202011097434 A CN202011097434 A CN 202011097434A CN 112174643 B CN112174643 B CN 112174643B
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薛凌
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Nanjing Xinzhi Electronic Material Technology Co ltd
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Abstract

本发明涉及一种微波陶瓷材料及用该材料制成的介质谐振器,按重量百分比包含以下组分:氧化钡45.0‑65.0%、氧化锌5.0‑10.0%、五氧化二钽35.0‑40.0%、二氧化锆0.01‑3.0%、二氧化锡0.01‑3.0%、三氧化二铁0.01‑1.0%、三氧化二镧0.01‑1.0%、氧化钴0.01‑1.0%、氧化锶0.01‑3.0%、三氧化二镓0.01‑3.0%、三氧化二铝0.01‑3.0%、氧化镍0.01‑1.0%、氧化铜0.01‑1.0%、二氧化钛0.01‑3.0%,各组分的质量百分比之和为100%。本发明通过不同金属氧化物的配比来制得性能优异、超高品质因数的微波陶瓷材料及介质谐振器,来匹配5G通讯需求的微波介质材料以及5G通讯所用到的介质谐振器等元器件产品。

Description

一种微波陶瓷材料及用该材料制成的介质谐振器
技术领域
本发明涉及5G通信技术领域,尤其涉及一种微波陶瓷材料及用该材料制成的介质谐振器。
背景技术
在现代5G通信技术中,微波通信占用十分重要的地位,它在军事和民用两方面都有广泛的应用,如雷达,卫星导航,卫星通讯,移动通信以及无线网络等方面。微波陶瓷材料及元器件是微波通信中重要的组成部分,它可以提高5G通讯设备的性能并可使元器件以至整机的小型化,因此研发新型的高性能微波陶瓷材料以及元器件是当今发达国家十分关注的研究方向。
发明内容
本发明的目的在于提供一种微波陶瓷材料及用该材料制成的介质谐振器,以解决上述背景技术中遇到的问题。
为实现上述目的,本发明的技术方案如下:
一种微波陶瓷材料,按重量百分比包含以下组分:氧化钡45.0-65.0%、氧化锌5.0-10.0%、五氧化二钽35.0-40.0%、二氧化锆0.01-3.0%、二氧化锡0.01-3.0%、三氧化二铁0.01-1.0%、三氧化二镧0.01-1.0%、氧化钴0.01-1.0%、氧化锶0.01-3.0%、三氧化二镓0.01-3.0%、三氧化二铝0.01-3.0%、氧化镍0.01-1.0%、氧化铜0.01-1.0%、二氧化钛0.01-3.0%,各组分的质量百分比之和为100%。
上述方案中,本微波陶瓷材料的介电常数εr=30±1.0,Qf=100000~150000GHz时,在-45℃~+105℃内谐振频率温度系数τf=0~(2~10)ppm/℃。
一种介质谐振器,由上述的微波陶瓷材料制成,所述介质谐振器是经配料、混料、合成、细磨、喷雾造粒、成型、烧制和后续加工制成的。
进一步的,所述介质谐振器呈实心圆柱状结构,所述介质谐振器的外径为5~20mm,所述介质谐振器的高为2~8mm。
进一步的,所述介质谐振器为中心轴线处开设有通孔的圆柱状结构,所述介质谐振器的外径为10~100mm,所述介质谐振器的内径为3~20mm,所述介质谐振器的高为5~50mm。
与现有技术相比,本发明的有益效果是:本发明通过不同金属氧化物的配比来制得性能优异、超高品质因数的微波陶瓷材料及介质谐振器,来匹配5G通讯需求的微波介质材料以及5G通讯所用到的介质谐振器等元器件产品。
附图说明
参照附图来说明本发明的公开内容。应当了解,附图仅仅用于说明目的,而并非意在对本发明的保护范围构成限制。在附图中,相同的附图标记用于指代相同的部件。其中:
图1为本发明在一实施例中的结构示意图;
图中标号:1-介质谐振器。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图,仅以示意方式说明本发明的基本结构,因此其仅显示本发明有关的构成。
根据本发明的技术方案,在不变更本发明实质精神下,本领域的一般技术人员可以提出可相互替换的多种结构方式以及实现方式。因此,以下具体实施方式以及附图仅是对本发明的技术方案的示例性说明,而不应当视为本发明的全部或者视为对本发明技术方案的限定或限制。
下面结合附图和实施例对本发明的技术方案做进一步的详细说明。
实施例1,一种微波陶瓷材料,按重量百分比包含以下组分:氧化钡43.0%、氧化锌6.5%、五氧化二钽34.0%、二氧化锆0.05%、二氧化锡0.5%、三氧化二铁0.01%、三氧化二镧0.01%、氧化钴0.01%、氧化锶0.01%、三氧化二镓0.01%、三氧化二铝0.01%、氧化镍0.01%、氧化铜0.01%、二氧化钛0.01%,各组分的质量百分比之和为100%。
上述方案中,本微波陶瓷材料的介电常数εr=29.5±1.0,Qf=100000~150000GHz时,在-45℃~+105℃内谐振频率温度系数τf=+2~+4ppm/℃。
实施例2,一种微波陶瓷材料,按重量百分比包含以下组分:氧化钡45.0%、氧化锌6.7%、五氧化二钽36.0%、二氧化锆0.75%、二氧化锡0.1%、三氧化二铁0.1%、三氧化二镧0.01%、氧化钴0.01%、氧化锶0.01%、三氧化二镓0.01%、三氧化二铝0.03%、氧化镍0.1%、氧化铜0.01%、二氧化钛0.01%,各组分的质量百分比之和为100%。
上述方案中,本微波陶瓷材料的介电常数εr=30±1.0,Qf=100000~150000GHz时,在-45℃~+105℃内谐振频率温度系数τf=+4~+6ppm/℃。
实施例3,一种微波陶瓷材料,按重量百分比包含以下组分:氧化钡44.0%、氧化锌7%、五氧化二钽37.5%、二氧化锆0.1%、二氧化锡0.01%、三氧化二铁0.01%、三氧化二镧0.01%、氧化钴0.01%、氧化锶0.01%、三氧化二镓0.01%、三氧化二铝0.01%、氧化镍0.5%、氧化铜0.01%、二氧化钛0.01%,各组分的质量百分比之和为100%。
上述方案中,本微波陶瓷材料的介电常数εr=30.5±1.0,Qf=100000~150000GHz时,在-45℃~+105℃内谐振频率温度系数τf=+6~+10ppm/℃。
实施例4,一种介质谐振器,由上述的微波陶瓷材料制成,所述介质谐振器是经配料、混料、合成、细磨、喷雾造粒、成型、烧制和后续加工制成的。
制造步骤为:按上述微波陶瓷材料按重量百分比进行配料,完成配料工序;为按配好的材料组分,在搅拌装置中搅拌均匀,完成混料工序;而后再1150℃下煅烧合成一个个的颗粒;再通过研磨细化达到D90≤5μm,完成细磨工序;加入占原料总质量12%的质量分数为5%的PVA溶液作为粘结剂混合得到浆料,进行喷雾造粒;在10MPa下压制得到生坯,完成成型工序;将生坯在1450℃下烧制8小时,即可获得由本微波陶瓷构成的介质谐振器。
后面还需要再加工,使其保持良好的外观,后加工工序为:将制成的介质谐振器的外表面进行打磨,然后进行清洗,而后进行烘干,最后经过测试合格后再对介质谐振器进行包装,完成本介质谐振器的所有工序。
当通过上述微波陶瓷材料配方制得的介质谐振器呈实心圆柱状结构时,介质谐振器的外径为6.3mm,高为3mm时。对本微波陶瓷介质谐振器进行测试,在使用频率为10GHz时,其性能情况为:fo=10.0GHz±0.05,Qo=10000,在-45℃~+105℃时,τf=+2~+4ppm/℃。
当通过上述微波陶瓷材料配方制得的介质谐振器呈实心圆柱状结构时,介质谐振器的外径为4mm,高为1.8mm时。对本微波陶瓷介质谐振器进行测试,在使用频率为16GHz时,其性能情况为:fo=16.0GHz±0.05,Qo=6500,在-45℃~+105℃时,τf=+2~+10ppm/℃。
呈实心圆柱状结构的介质谐振器,主要适用于直径不是很大的介质谐振器,一般使用在频率较高的场景中。
请参阅图1,当通过上述微波陶瓷材料配方制得的在中心轴线处开设有通孔的圆柱状结构时,介质谐振器1的外径为10mm,内径为3mm,高为4.5mm时。对本微波陶瓷介质谐振器进行测试,在使用频率为6.4GHz时,其性能情况为:fo=6.4GHz±0.05,Qo=16000,在-45℃~+105℃时,τf=+2~+6ppm/℃。
在中心轴线处开设有通孔的圆柱状结构的介质谐振器,主要适用于直径较大的介质谐振器,一般使用在频率范围较宽的场景中。
本发明通过不同金属氧化物的配比来制得高性能、超高品质因数的微波陶瓷材料及介质谐振器,来匹配5G通讯需求的微波介质材料以及5G通讯所用到的介质谐振器等元器件产品。
以上所述的具体实施方式,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施方式,并不用于限定本发明保护范围,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应含在本发明的保护范围之内。

Claims (5)

1.一种微波陶瓷材料,其特征在于,按重量百分比包含以下组分:氧化钡45.0-65.0%、氧化锌5.0-10.0%、五氧化二钽35.0-40.0%、二氧化锆0.01-3.0%、二氧化锡0.01-3.0%、三氧化二铁0.01-1.0%、三氧化二镧0.01-1.0%、氧化钴0.01-1.0%、氧化锶0.01-3.0%、三氧化二镓0.01-3.0%、三氧化二铝0.01-3.0%、氧化镍0.01-1.0%、氧化铜0.01-1.0%、二氧化钛0.01-3.0%,各组分的质量百分比之和为100%;
所述微波陶瓷材料制成介质谐振器的制备方法:
按上述微波陶瓷材料按重量百分比进行配料,完成配料工序;为按配好的材料组分,在搅拌装置中搅拌均匀,完成混料工序;而后在1150℃下煅烧合成一个个的颗粒;再通过研磨细化达到D90≤5μm,完成细磨工序;加入占原料总质量12%的质量分数为5%的PVA溶液作为粘结剂混合得到浆料,进行喷雾造粒;在10MPa下压制得到生坯,完成成型工序;将生坯在1450℃下烧制8小时,即可获得由本微波陶瓷构成的介质谐振器。
2.根据权利要求1所述的一种微波陶瓷材料,其特征在于:本微波陶瓷材料的介电常数εr=30±1.0,Qf=100000~150000GHz时,在-45℃~+105℃内谐振频率温度系数τf=0~(2~10)ppm/℃。
3.一种使用如权利要求1或2所述的微波陶瓷材料制成的介质谐振器,其特征在于:所述介质谐振器是经配料、混料、合成、细磨、喷雾造粒、成型、烧制和后续加工制成的。
4.根据权利要求3所述的介质谐振器,其特征在于:所述介质谐振器呈实心圆柱状结构,所述介质谐振器的外径为5~20mm,所述介质谐振器的高为2~8mm。
5.根据权利要求3所述的介质谐振器,其特征在于:所述介质谐振器为中心轴线处开设有通孔的圆柱状结构,所述介质谐振器的外径为10~100mm,所述介质谐振器的内径为3~20mm,所述介质谐振器的高为5~50mm。
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