CN112151661A - LED light-emitting device and packaging method thereof - Google Patents
LED light-emitting device and packaging method thereof Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000843 powder Substances 0.000 claims abstract description 90
- 239000002245 particle Substances 0.000 claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 150000004767 nitrides Chemical class 0.000 claims abstract description 61
- 230000000694 effects Effects 0.000 claims abstract description 13
- 230000000903 blocking effect Effects 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 45
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 22
- 238000002156 mixing Methods 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000000428 dust Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000003738 black carbon Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present disclosure relates to the field of lighting technologies, and in particular, to an LED lighting device and a packaging method thereof. The LED light-emitting device comprises a support structure, an LED chip group fixed on the support structure and a packaging layer covering the LED chip group; wherein the packaging layer contains metal nitride particle powder with light-blocking effect. The metal nitride particle powder has the functions of blocking light and absorbing light, so that the luminous efficiency of a device can be reduced to meet the requirement of low brightness, the brightness of the LED luminous device can be adjusted to meet the requirements of different customers by adding the metal nitride particle powder in a mass ratio, the LED luminous device is suitable for different application occasions, and the metal nitride particle powder is used in the LED luminous device, does not react with other dust, and has the characteristics of low cost and good yield.
Description
Technical Field
The application belongs to the technical field of light emitting, and particularly relates to an LED light emitting device and a packaging method thereof.
Background
An led (light Emitting diode) is a semiconductor solid-state light Emitting device, which uses a solid-state semiconductor chip as a light Emitting material. With the increasing requirements of the LED market on brightness, the existing used packaging chip materials are all promoted to high brightness, but some markets needing low-brightness application cannot be met.
The brightness specification of the general LED is realized by matching a light-emitting chip with a gold wire and refracting by secondary packaging fluorescent glue, the brightness of a white light finished product can be suitable for general and high-brightness markets, but the white light finished product can not be matched with the ultra-low white light brightness markets, the low-brightness white light markets such as backlight in a vehicle and ultra-low-brightness smart home, and the requirement of the white light brightness on weak slight brightness indicates a sweet and comfortable environment for people. At present, the packaging technology of low-brightness white light includes: 1. the method uses a special black PPA (Polyphthalamide) bracket structure to block the output of white light, the method needs to use the special bracket structure, which can cause the use cost of a single product and a single material to rise, and in addition, the black PPA bracket structure has only fixed component proportion, the interval for adjusting the brightness of the white light is limited, and the method cannot be suitable for all specifications; 2. adding 9-13 μm carbon powder into the white light package, the black carbon powder has smaller particle size and good inhibition brightness, but the black carbon powder is unevenly stirred in the stirring process of the black carbon powder and glue, so that the white light brightness distribution yield of the product in the mass production process is integrally reduced; 3. white-light silicone resin glue added with black carbon powder is used, after the black carbon powder is added into the glue for a period of time, the carbon powder can be precipitated in a glue bottle, so that the viscosity of the glue is influenced, the white-light brightness of a finished product after operation is not scattered uniformly, the white-light brightness distribution yield of the finished product is influenced, and in addition, the black carbon powder and the glue are matched in different finished products in different brightness, so that the complexity in operation is increased and the operation is difficult.
Therefore, the related art is in need of improvement.
Disclosure of Invention
The present application aims to provide an LED light emitting device and a packaging method thereof, and aims to solve the problems of complex process, high cost and low yield of the conventional LED light emitting device in realizing low brightness.
In order to achieve the purpose of the application, the technical scheme adopted by the application is as follows:
in a first aspect, the present application provides an LED lighting device, which includes a support structure, an LED chip set fixed on the support structure, and an encapsulation layer covering the LED chip set; wherein the packaging layer contains metal nitride particle powder with light-blocking effect.
The application provides an LED light-emitting device, it covers the encapsulation layer that contains the metal nitride particle powder that has the effect of hindering light on the LED chipset, because of this metal nitride particle powder has the effect of hindering light and absorbing light, consequently it can make the luminous efficacy of device reduce between original 5-90%, can satisfy the needs of low luminance like this, this application can reach different customer's needs through the mass ratio regulation LED light-emitting device luminance that adds this metal nitride particle powder, adapt to different application occasions, and use in LED light-emitting device, do not react with other dusts, have with low costs, characteristics that the yield is good.
In a second aspect, the present application provides a method for packaging an LED light emitting device, including the following steps:
fixing the LED chip group on the bracket structure;
coating a mixture containing glue and metal nitride particle powder with a light blocking effect on the LED chip group; and
curing the mixture to form an encapsulation layer.
According to the packaging method of the LED light-emitting device, the packaging layer containing the metal nitride particle powder with the light blocking effect is sealed on the LED chip set, and the metal nitride particle powder has the light blocking and absorbing effects, so that the light-emitting efficiency of the device can be reduced, the requirement of low brightness can be met, the brightness of the LED light-emitting device can be adjusted to meet the requirements of different customers by adding the metal nitride particle powder in a mass ratio, and the packaging method has the characteristics of simple process, low cost and good yield.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an LED lighting device provided in an embodiment of the present application;
fig. 2 is a schematic flowchart of a packaging method of an LED light-emitting device according to an embodiment of the present disclosure.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application more clearly apparent, the present application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In this application, the term "and/or" describes an association relationship of associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a is present alone, A and B are present simultaneously, and B is present alone. Wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
In a first aspect, an embodiment of the present invention provides an LED lighting device, as shown in fig. 1, the LED lighting device includes a support structure 1, an LED chip set 2 fixed on the support structure 1, and an encapsulation layer 3 covering the LED chip set 2; the encapsulating layer 3 contains metal nitride particle powder (not shown) with light blocking effect.
The application provides an LED light-emitting device, it covers the encapsulation layer that contains the metal nitride particle powder that has the effect of hindering light on the LED chipset, because of this metal nitride particle powder has the effect of hindering light and absorbing light, consequently it can make the luminous efficacy of device reduce between original 5-90%, can satisfy the needs of low luminance like this, this application can reach different customer's needs through the mass ratio regulation LED light-emitting device luminance that adds this metal nitride particle powder, adapt to different application occasions, and use in LED light-emitting device, do not react with other dusts, have with low costs, characteristics that the yield is good.
In some embodiments, the material of the metal nitride particle powder comprises aluminum nitride (AlN), and in this embodiment, experiments show that aluminum nitride is used in an encapsulation layer in an LED light-emitting device, and the aluminum nitride can block and absorb light by a surface light absorption principle, so that the light-emitting brightness of the device can be reduced. The aluminum nitride can be synthesized from aluminum powder at 800-1000 ℃ in ammonia or nitrogen atmosphere, and the product is white to grey blue powder; or from Al2O3-C-N2The system is synthesized by reaction at 1600-1750 ℃, and the product is off-white powder.
In some embodiments, the metal nitride particle powder is gray, such as gray aluminum nitride particle powder; gray color has stronger light-blocking effect, and can be used as reflected and refracted light compared with white color, and can be used as light absorption compared with black color. Therefore, the gray metal nitride particle powder has a better light-blocking effect.
In some embodiments, the particle size of the metal nitride particle powder is 2 to 10 μm, such as 3 to 8 μm. After the metal nitride particle powder with smaller particle size is mixed with the glue in the support structure cup, the viscosity of the diluted glue is increased, but the diluted glue cannot be too viscous, so that the particle size of the metal nitride particle powder needs to be tested and controlled, the dispensing of the product material in the operation process can be more convenient, and the yield is further improved.
In some embodiments, the power of the LED light-emitting device is less than or equal to 0.1W. The brightness of the LED light-emitting device is reduced to meet the market demand of low-power specification.
In some embodiments, the LED chip set includes at least one of an orange chip, a red chip, a blue chip and a green chip, and may also include other LED chips emitting light, and the package layer is obtained by mixing and curing glue and the metal nitride particle powder. For example, if the LED chip group is an orange chip, the LED lighting device is an orange device, and a package layer is obtained by mixing glue and metal nitride particle powder and then applying glue to the LED chip group for curing, so as to reduce the brightness of the orange device; or the LED chip group is a red light chip, the LED light-emitting device is a red light device, and a packaging layer is obtained by mixing glue and metal nitride particle powder and then dispensing and curing the mixture on the LED chip group so as to reduce the brightness of the red light device; or the LED chip group is a blue light chip, the LED light-emitting device is a blue light device, and a packaging layer is obtained by mixing glue and metal nitride particle powder and then dispensing and curing the mixture on the LED chip so as to reduce the brightness of the blue light device; or the LED chip group is a green light chip, the LED light-emitting device is a green light device, and the packaging layer is obtained by mixing glue and metal nitride particle powder and then dispensing and curing the mixture on the LED chip group so as to reduce the brightness of the green light device. Of course, the LED chip set may also include a plurality of LED chips for mixing light. Further, in the above package layer, a mass ratio of the glue, for example, silica gel, to the metal nitride particle powder is 100: 2-40, which is matched in the LED light-emitting device to account for the proportion of glue, can reduce the luminous efficiency of the device to 5-90% of the original luminous efficiency, and the range can be adjusted by the brightness required by customers.
In some embodiments, the LED chip group is a blue chip, and the package layer is obtained by mixing and curing glue, yellow phosphor, and the metal nitride particle powder. The LED light-emitting device realizes white light by adding yellow fluorescent powder into a blue light chip, and a packaging layer is obtained by mixing glue, the yellow fluorescent powder and metal nitride particle powder and then performing glue dispensing and curing on an LED chip group so as to reduce the brightness of the white light device. Further, in the packaging layer of the white light device, the mass ratio of the glue, such as silica gel, to the metal nitride particle powder is 100: 2-40, the luminous efficiency of the device can be reduced to 5-90% of the original luminous efficiency by being matched in the LED luminous device in proportion of glue, and the range can be adjusted by the brightness required by customers.
In a second aspect, the present invention provides a method for packaging an LED light emitting device, as shown in fig. 2, the method includes the following steps:
s01: fixing the LED chip group on the bracket structure;
s02: coating a mixture containing glue and metal nitride particle powder with a light blocking effect on the LED chip group; and
s03: curing the mixture to form an encapsulation layer.
According to the packaging method of the LED light-emitting device, the packaging layer containing the metal nitride particle powder with the light blocking effect is sealed on the LED chip set, and the metal nitride particle powder has the light blocking and absorbing effects, so that the light-emitting efficiency of the device can be reduced, the requirement of low brightness can be met, the brightness of the LED light-emitting device can be adjusted to meet the requirements of different customers by adding the metal nitride particle powder in a mass ratio, and the packaging method has the characteristics of simple process, low cost and good yield.
In some embodiments, the material of the metal nitride particle powder includes aluminum nitride; the metal nitride particle powder is gray; the particle size of the metal nitride particle powder is 2-10 mu m. Reference is made above to the specific selection of metal nitride particle powders.
In some embodiments, the LED chip set includes at least one of an orange chip, a red chip, a blue chip, and a green chip, and the preparing the mixture step includes: mixing the glue and the metal nitride particle powder according to a mass ratio of 100: 2-40, and mixing to obtain the mixture. After the mixture is obtained, coating the mixture on the LED chip group, and then curing to obtain the packaging layer; if the LED chip group is an orange chip, the packaging of the orange device is realized, if the LED chip group is a red chip, the packaging of the red device is realized, if the LED chip group is a blue chip, the packaging of the blue device is realized, and if the LED chip group is a green chip, the packaging of the green device is realized; of course, the LED chip set may also include a plurality of LED chips for light mixing, and the LED chip set is packaged in a light mixing manner.
In some embodiments, the LED chip set is a blue chip, and the step of preparing the mixture includes: mixing the glue, the yellow fluorescent powder and the metal nitride particle powder, wherein the mass ratio of the glue to the metal nitride particle powder is 100: 2-40. After the mixture is obtained, the mixture is coated on the LED chip group and then cured to obtain the packaging layer. Namely, the encapsulation of the white light device is realized by a mode of adding yellow fluorescent powder into a blue light chip.
According to the packaging method provided by the application, the LED chip group is fixed in the LED support structure cup, then the gold wire is punched, the mixed metal nitride particle powder and glue (such as a white light device, yellow fluorescent powder is further added) are added in the cup and then cured, and sealing packaging is realized, in the packaging process, the metal nitride particle powder does not react with other dust (such as fluorescent powder), and the luminous efficiency of the device can be reduced to 5-90% of the original luminous efficiency; for example, the light-emitting brightness of the sealed package of the packaging layer without the added metal nitride particle powder is 1000MCD, and after the packaging layer is added with the metal nitride particle powder, the light-emitting brightness of the device can be adjusted to 50MCD at the lowest.
The LED light-emitting device with the low-power specification and the power less than or equal to 0.1W is preferably selected in the design, the product process is consistent with the existing powder preparation process no matter what packaging form, and the brightness of the LED light-emitting device can be directly adjusted by adding 2-40% of the metal nitride particle powder in the ultra-low brightness markets in the future, such as furniture indication, vehicle backlight and the like.
The following description will be given with reference to specific examples.
Example 1
An LED light-emitting device comprises a support structure, an LED chip group fixed on the support structure and a packaging layer covering the LED chip group; the LED chip group is an orange chip with the peak wavelength of about 602nm, and the packaging layer is prepared by mixing glue and aluminum nitride particle powder according to different proportions.
Table 1 shows the corresponding test data of the aluminum nitride particle powders with different proportions in the LED light emitting device with the same specification in this embodiment, and the comparison of the result data of different aluminum nitride particle powder proportions with 10g of glue shows that 10g of glue: the LED light-emitting device with the proportion of 3g of aluminum nitride powder (namely 30 percent of aluminum nitride powder) has the most obvious effect, and the brightness of the LED light-emitting device is reduced by 90 percent.
TABLE 1
In table 1: IF is forward current, VF is forward voltage, IV is luminous intensity, WL is wavelength, and AVG is average value.
Example 2
An LED light-emitting device comprises a support structure, an LED chip group fixed on the support structure and a packaging layer covering the LED chip group; the LED chip group is a blue light chip with the peak wavelength of 461-463 nm, and the packaging layer is prepared by mixing glue and aluminum nitride particle powder according to different proportions.
Table 2 shows the corresponding test data of the aluminum nitride particle powders with different proportions in the LED light emitting device with the same specification in this embodiment, and the comparison of the result data of different aluminum nitride particle powder proportions with 10g of glue shows that 10g of glue: the brightness of the LED light-emitting device with the proportion of 5g of aluminum nitride powder (namely, the aluminum nitride powder accounts for 50 percent) is reduced by 99 percent, but the aluminum nitride powder in the proportion accounts for half of the weight of glue, so that the glue-out process problem exists during operation, and therefore, the upper limit of the specification can be positioned as 10 by comprehensively considering the process: 4 (i.e. the weight proportion of the aluminum nitride powder is 40%).
TABLE 2
In table 2: IF is forward current, VF is forward voltage, IV is luminous intensity, WL is wavelength, and AVG is average value.
Example 3
An LED light-emitting device comprises a support structure, an LED chip fixed on the support structure and a packaging layer covering an LED chip group; wherein, the LED chipset is blue light chip, and the encapsulation layer is prepared by glue, yellow phosphor powder and aluminium nitride particle powder mixture, and the mass ratio of glue and aluminium nitride particle powder is 10: 4, the LED light-emitting device realizes white light in a mode of adding yellow fluorescent powder into a blue light chip.
Table 3 shows the test data of the LED lighting device with the same specification in this example, which corresponds to the white LED lighting device without aluminum nitride powder, because 40% of aluminum nitride powder is added in this example, the luminance can be significantly reduced.
TABLE 3
In table 3: IF is forward current, VF is forward voltage, IV is luminous intensity, X/Y is color coordinate, AVG is average value.
In addition, compared with the existing black-shell LED external-sealing support structure (without aluminum nitride powder), the brightness of the existing black-shell LED external-sealing support structure can be reduced by 76%, but the specification and the brightness of the black-shell LED external-sealing support structure cannot be changed due to different brightness specifications required by different use fields, and the special uniqueness of the black-shell LED external-sealing support structure has the defects of single unit price, high specification and difficulty in popularization.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. The LED light-emitting device is characterized by comprising a support structure, an LED chip group fixed on the support structure and a packaging layer covering the LED chip group; wherein the packaging layer contains metal nitride particle powder with light-blocking effect.
2. The LED light emitting device according to claim 1, wherein the material of the metal nitride particle powder includes aluminum nitride; and/or the presence of a gas in the gas,
the metal nitride particle powder is gray; and/or the presence of a gas in the gas,
the particle size of the metal nitride particle powder is 2-10 mu m.
3. The LED lighting device as claimed in claim 1, wherein the power of the LED lighting device is less than or equal to 0.1W.
4. The LED light emitting device of claim 1, wherein the LED chip set comprises at least one of an orange chip, a red chip, a blue chip, and a green chip, and the encapsulation layer is obtained by mixing and curing a glue and the metal nitride particle powder.
5. The LED light emitting device of claim 1, wherein the LED chip set is a blue chip, and the encapsulation layer is obtained by mixing and curing glue, yellow phosphor, and the metal nitride particle powder.
6. The LED light-emitting device according to claim 4 or 5, wherein a mass ratio of the glue to the metal nitride particle powder is 100: 2-40.
7. A method for packaging an LED light-emitting device is characterized by comprising the following steps:
fixing the LED chip group on the bracket structure;
coating a mixture containing glue and metal nitride particle powder with a light blocking effect on the LED chip group; and
curing the mixture to form an encapsulation layer.
8. The method for encapsulating an LED light emitting device according to claim 7, wherein the material of the metal nitride particle powder includes aluminum nitride; and/or the presence of a gas in the gas,
the metal nitride particle powder is gray; and/or the presence of a gas in the gas,
the particle size of the metal nitride particle powder is 2-10 mu m.
9. The method of claim 7, wherein the group of LED chips comprises at least one of an orange chip, a red chip, a blue chip, and a green chip, and the step of preparing the mixture comprises: mixing the glue and the metal nitride particle powder according to a mass ratio of 100: 2-40 and mixing.
10. The method of claim 7, wherein the group of LED chips is a blue chip, and the step of preparing the mixture comprises: mixing the glue, the yellow fluorescent powder and the metal nitride particle powder, wherein the mass ratio of the glue to the metal nitride particle powder is 100: 2-40.
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| CN202011137811.8A CN112151661A (en) | 2020-10-22 | 2020-10-22 | LED light-emitting device and packaging method thereof |
| TW109141160A TWI758969B (en) | 2020-10-22 | 2020-11-24 | LED light-emitting device and packaging method thereof |
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| CN105732118A (en) * | 2014-12-11 | 2016-07-06 | 深圳市光峰光电技术有限公司 | Diffuse reflection material, diffuse reflection layer, wavelength conversion apparatus and light source system |
| CN109962144A (en) * | 2017-12-22 | 2019-07-02 | 南京澳特利光电科技有限公司 | A kind of low-light level LED |
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| TW202218191A (en) | 2022-05-01 |
| TWI758969B (en) | 2022-03-21 |
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