TWI758969B - LED light-emitting device and packaging method thereof - Google Patents

LED light-emitting device and packaging method thereof Download PDF

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TWI758969B
TWI758969B TW109141160A TW109141160A TWI758969B TW I758969 B TWI758969 B TW I758969B TW 109141160 A TW109141160 A TW 109141160A TW 109141160 A TW109141160 A TW 109141160A TW I758969 B TWI758969 B TW I758969B
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light
led
particle powder
metal nitride
emitting device
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TW202218191A (en
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易歡歡
譚成邦
何俊杰
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大陸商弘凱光電(深圳)有限公司
弘凱光電股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations

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Abstract

本發明係關於發光技術領域,特別是關於一種LED發光裝置及其封裝方法。LED發光裝置包含支架結構、固定於支架結構上的LED晶片組及覆蓋LED晶片組的封裝層;其中,封裝層含有具有阻光作用的金屬氮化物粒子粉。因金屬氮化物粒子粉具有阻擋光及吸收光的作用,因此其可降低裝置的發光效率滿足低亮度的需要,而且可透過添加金屬氮化物粒子粉的質量比來調節LED發光裝置的亮度達到不同客戶需要,適應不同應用場合,並且使用在LED發光裝置內,不與其它粉塵起反應,具有成本低、良率好的特點。The present invention relates to the technical field of light-emitting, in particular to an LED light-emitting device and a packaging method thereof. The LED light-emitting device includes a support structure, an LED chip set fixed on the support structure, and an encapsulation layer covering the LED chip set; wherein, the encapsulation layer contains metal nitride particle powder with light blocking function. Because the metal nitride particle powder has the function of blocking light and absorbing light, it can reduce the luminous efficiency of the device to meet the needs of low brightness, and the brightness of the LED light-emitting device can be adjusted by adding the mass ratio of the metal nitride particle powder to achieve different brightness. According to customer needs, it is suitable for different applications, and it is used in LED light-emitting devices, does not react with other dust, and has the characteristics of low cost and good yield.

Description

LED發光裝置及其封裝方法LED light-emitting device and packaging method thereof

本發明係屬於發光技術領域,特別是關於一種LED發光裝置及其封裝方法。The invention belongs to the technical field of light-emitting, and in particular relates to an LED light-emitting device and a packaging method thereof.

LED(Light Emitting Diode)即發光二極體,是一種半導體固體發光裝置,它是利用固體半導體晶片作為發光材料。隨著LED市場對亮度的要求越來越高,目前使用的封裝晶片物料都在往高亮度上提升,但一些需要低亮度應用的市場無法得到滿足。LED (Light Emitting Diode) is a light-emitting diode, which is a semiconductor solid-state light-emitting device, which uses a solid-state semiconductor wafer as a light-emitting material. As the LED market has higher and higher requirements for brightness, the currently used packaging chip materials are all improving to high brightness, but some markets that require low brightness applications cannot be satisfied.

一般LED亮度規格均是以發光晶片搭配金線加上二次封裝螢光膠水折射後實現,其白光成品亮度可適用於一般及其高亮市場,但在一些極低白光亮度市場上與之無法配用,低亮白光市場比如車內背光、極低亮的智能家居,其白光亮度要求微弱微亮表示給人一種溫馨舒適的環境。目前,低亮白光的封裝技術有:1、使用專用的黑色PPA(Polyphthalamide,聚鄰苯二甲醯胺)支架結構來阻擋白光的輸出,該方法需要使用專用支架結構,其會造成單一產品單一物料的使用成本上漲,另外因其黑色的PPA支架結構成份比例只能固定,調節白光亮度的區間有限,無法適用全部規格;2、在白光封裝體內添加9~13μm的碳粉,黑色碳粉粒徑較小抑制亮度佳,但黑色碳粉在與膠水攪拌過程中,會有黑色碳粉攪不均勻現象,以至於量產過程中成品白光亮度分佈良率整體下降;3、使用加了黑色碳粉的白光矽樹脂膠水,在將黑色碳粉加入膠水內一段時間後,碳粉會在膠水瓶內沉澱,這樣膠水黏稠度有所影響,導致作業後成品白光亮度散落不均,成品白光亮度分佈良率有所影響,另外在不同亮度上,黑色碳粉膠水搭配需要配到不一樣的成品內,導致作業上複雜程度加重及困難。General LED brightness specifications are achieved by light-emitting chips with gold wires and secondary packaging fluorescent glue after refraction. The brightness of white light products is suitable for general and high-brightness markets. For use in low-brightness white light markets, such as in-vehicle backlights and extremely low-brightness smart homes, the white light brightness requirements are weak and faint, indicating a warm and comfortable environment. At present, the low-brightness white light packaging technologies include: 1. Use a special black PPA (Polyphthalamide) support structure to block the output of white light. This method requires the use of a special support structure, which will cause a single product to be single The cost of using materials increases, and because the proportion of black PPA bracket structure can only be fixed, the range for adjusting the brightness of white light is limited, and all specifications cannot be applied; 2. Add 9~13μm toner in the white light package, black toner particles The smaller diameter is better to suppress the brightness, but when the black toner is mixed with the glue, the black toner will be unevenly stirred, so that the white light brightness distribution yield of the finished product will decrease as a whole during the mass production process; 3. The use of black carbon Powder white silicone resin glue, after adding black toner to the glue for a period of time, the toner will precipitate in the glue bottle, which will affect the viscosity of the glue, resulting in uneven brightness of the finished white light after the operation, and the distribution of the brightness of the finished white light. The yield is affected. In addition, in terms of different brightness, the black toner and glue need to be matched in different finished products, which leads to increased complexity and difficulty in the operation.

因此,相關技術有待改進。Therefore, the related technology needs to be improved.

本發明之目的在於提供一種LED發光裝置及其封裝方法,旨在解決現有LED發光裝置實現低亮度的過程繁瑣、成本高,且良率低的問題。The purpose of the present invention is to provide an LED light-emitting device and a packaging method thereof, which aims to solve the problems of cumbersome process, high cost and low yield of the existing LED light-emitting device to achieve low brightness.

為實現上述發明目的,本發明採用的技術方案如下:For realizing the above-mentioned purpose of the invention, the technical scheme adopted in the present invention is as follows:

第一方面,本發明提供一種LED發光裝置,LED發光裝置包含支架結構、固定於支架結構上的LED晶片組及覆蓋LED晶片組的封裝層;其中,封裝層含有具有阻光作用的金屬氮化物粒子粉。In a first aspect, the present invention provides an LED light-emitting device, the LED light-emitting device includes a support structure, an LED chip set fixed on the support structure, and an encapsulation layer covering the LED chip set; wherein, the encapsulation layer contains a metal nitride with light blocking effect particle powder.

本發明提供的LED發光裝置,其在LED晶片組上覆蓋一層含有具有阻光作用的金屬氮化物粒子粉的封裝層,因金屬氮化物粒子粉具有阻擋光及吸收光的作用,因此其可使裝置的發光效率降低到原有的5~90%之間,這樣可滿足低亮度的需要,本發明可透過添加金屬氮化物粒子粉的質量比來調節LED發光裝置亮度達到不同客戶需要,適應不同應用場合,並且使用在LED發光裝置內,不與其它粉塵起反應,具有成本低、良率好的特點。In the LED light-emitting device provided by the present invention, an encapsulation layer containing metal nitride particle powder with light blocking effect is covered on the LED chip set. Because the metal nitride particle powder has the functions of blocking light and absorbing light, it can make The luminous efficiency of the device is reduced to between 5 and 90% of the original, which can meet the needs of low brightness. The present invention can adjust the brightness of the LED light-emitting device by adding the mass ratio of the metal nitride particle powder to meet the needs of different customers and adapt to different It is suitable for application occasions, and is used in LED light-emitting devices, does not react with other dust, and has the characteristics of low cost and good yield.

第二方面,本發明提供一種LED發光裝置的封裝方法,包含如下步驟:In a second aspect, the present invention provides a packaging method for an LED light-emitting device, comprising the following steps:

將LED晶片組固定在支架結構上;Fix the LED chip set on the bracket structure;

在LED晶片組上塗覆包含膠水及具有阻光作用的金屬氮化物粒子粉的混合物;以及coating the LED chip set with a mixture comprising glue and metal nitride particle powder with light blocking effect; and

固化混合物形成封裝層。The cured mixture forms an encapsulation layer.

本發明提供的LED發光裝置的封裝方法,其在LED晶片組上密封一層含有具有阻光作用的金屬氮化物粒子粉的封裝層,因金屬氮化物粒子粉具有阻擋光及吸收光的作用,因此其可降低裝置的發光效率,這樣可滿足低亮度的需要,封裝方法透過添加金屬氮化物粒子粉的質量比來調節LED發光裝置亮度達到不同客戶需要,具有製程簡單、成本低、良率好的特點。In the packaging method of the LED light-emitting device provided by the present invention, a packaging layer containing metal nitride particle powder with light blocking effect is sealed on the LED chip set. Because the metal nitride particle powder has the effect of blocking light and absorbing light, therefore It can reduce the luminous efficiency of the device, which can meet the needs of low brightness. The packaging method adjusts the brightness of the LED light-emitting device by adding the mass ratio of metal nitride particle powder to meet the needs of different customers. It has the advantages of simple process, low cost and good yield. Features.

為了使本發明要解決的技術問題、技術方案及有益效果更加清楚明白,以下結合實施例,對本發明進行進一步詳細說明。應當理解,此處所描述的具體實施例僅僅用以解釋本發明,並不用於限定本發明。In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

本發明中,用語「及/或」,描述關聯對象的關聯關係,表示可存在三種關係,例如,A及/或B,可表示:單獨存在A,同時存在A及B,單獨存在B的情況。其中A,B可為單數或者複數。字符「/」一般表示前後關聯對象是一種「或」的關係。In the present invention, the term "and/or" describes the relationship of related objects, indicating that there can be three relationships, for example, A and/or B, which can mean that A exists alone, A and B exist at the same time, and B exists alone . A and B can be singular or plural. The character "/" generally indicates that the contextual object is an "or" relationship.

本發明實施例第一方面提供一種LED發光裝置,如圖1所示,LED發光裝置包含支架結構1、固定於支架結構1上的LED晶片組2及覆蓋LED晶片組2的封裝層3;其中,封裝層3含有具有阻光作用的金屬氮化物粒子粉(圖未標注)。A first aspect of the embodiments of the present invention provides an LED lighting device. As shown in FIG. 1 , the LED lighting device includes a bracket structure 1 , an LED chip set 2 fixed on the bracket structure 1 , and an encapsulation layer 3 covering the LED chip set 2 ; wherein , the encapsulation layer 3 contains metal nitride particle powder with light blocking function (not marked in the figure).

本發明提供的LED發光裝置,其在LED晶片組上覆蓋一層含有具有阻光作用的金屬氮化物粒子粉的封裝層,因金屬氮化物粒子粉具有阻擋光及吸收光的作用,因此其可使裝置的發光效率降低到原有的5~90%之間,這樣可滿足低亮度的需要,本發明可透過添加金屬氮化物粒子粉的質量比來調節LED發光裝置亮度達到不同客戶需要,適應不同應用場合,並且使用在LED發光裝置內,不與其它粉塵起反應,具有成本低、良率好的特點。In the LED light-emitting device provided by the present invention, an encapsulation layer containing metal nitride particle powder with light blocking effect is covered on the LED chip set. Because the metal nitride particle powder has the functions of blocking light and absorbing light, it can make The luminous efficiency of the device is reduced to between 5 and 90% of the original, which can meet the needs of low brightness. The present invention can adjust the brightness of the LED light-emitting device by adding the mass ratio of the metal nitride particle powder to meet the needs of different customers and adapt to different It is suitable for application occasions, and is used in LED light-emitting devices, does not react with other dust, and has the characteristics of low cost and good yield.

在一些實施例中,金屬氮化物粒子粉的材料包含氮化鋁(AlN),本實施例中,透過試驗發現,氮化鋁用在LED發光裝置中的封裝層內,其透過表面吸光原理可阻擋並吸收光,從而可降低裝置發光亮度。氮化鋁可由鋁粉在氨或氮氣氛中800~1000℃合成,產物為白色到灰藍色粉末;或由Al 2O 3-C-N 2體系在1600~1750℃反應合成,產物為灰白色粉末。 In some embodiments, the material of the metal nitride particle powder includes aluminum nitride (AlN). In this embodiment, it is found through experiments that aluminum nitride is used in the encapsulation layer of the LED light-emitting device. Blocks and absorbs light, thereby reducing the brightness of the device. Aluminum nitride can be synthesized by aluminum powder at 800~1000℃ in ammonia or nitrogen atmosphere, and the product is white to gray-blue powder; or by the reaction of Al 2 O 3 -CN 2 system at 1600~1750℃, the product is gray-white powder.

在一些實施例中,金屬氮化物粒子粉呈灰色,如灰色的氮化鋁粒子粉;灰色是有較強的阻光作用,相比白色可作為反光折射光,相比黑色可作為吸光。因此,灰色的金屬氮化物粒子粉具有更好的阻光效果。In some embodiments, the metal nitride particle powder is gray, such as gray aluminum nitride particle powder; gray has a strong light blocking effect, which can be used as reflection and refraction compared with white, and can be used as light absorption compared with black. Therefore, the gray metal nitride particle powder has better light blocking effect.

在一些實施例中,金屬氮化物粒子粉的粒徑為2~10μm,如3~8μm。較小粒徑的金屬氮化物粒子粉在支架結構杯內與膠水混後,對較稀釋的膠水的黏度有所增加,但又不可太黏稠,因此需對金屬氮化物粒子粉的粒徑加以測試控制,如此可更方便產品材料在作業製程點膠,從而進一步提高良率。In some embodiments, the particle size of the metal nitride particle powder is 2-10 μm, such as 3-8 μm. After the metal nitride particle powder with smaller particle size is mixed with the glue in the support structure cup, the viscosity of the thinner glue will increase, but it should not be too viscous. Therefore, the particle size of the metal nitride particle powder needs to be tested. Control, so that it is more convenient for product materials to be dispensed in the operation process, thereby further improving the yield.

在一些實施例中,LED發光裝置的功率≤0.1W。透過對LED發光裝置降低亮度以滿足低功率規格的市場需要。In some embodiments, the power of the LED lighting device is ≤ 0.1W. By reducing the brightness of LED lighting devices to meet the market demand for low power specifications.

在一些實施例中,LED晶片組包含橙光晶片、紅光晶片、藍光晶片及綠光晶片中的至少一種,當然還可包含其它發光色的LED晶片,封裝層由膠水及金屬氮化物粒子粉混合後固化得到。例如,LED晶片組為橙光晶片,則LED發光裝置為橙光裝置,其由膠水及金屬氮化物粒子粉混合後在LED晶片組上點膠固化得到封裝層,以降低橙光裝置的亮度;或者LED晶片組為紅光晶片,則LED發光裝置為紅光裝置,其由膠水及金屬氮化物粒子粉混合後在LED晶片組上點膠固化得到封裝層,以降低紅光裝置的亮度;或者LED晶片組為藍光晶片,則LED發光裝置為藍光裝置,其由膠水及金屬氮化物粒子粉混合後在LED晶片上點膠固化得到封裝層,以降低藍光裝置的亮度;或者LED晶片組為綠光晶片,則LED發光裝置為綠光裝置,其由膠水及金屬氮化物粒子粉混合後在LED晶片組上點膠固化得到封裝層,以降低綠光裝置的亮度。當然, LED晶片組也可包含多種LED晶片進行混光。進一步地,上述封裝層中,膠水,例如矽膠,及金屬氮化物粒子粉的質量比為100:2~40,其透過配在LED發光裝置中占膠水的比例,其可使裝置的發光效率降低到原有的5~90%之間,其範圍可由客戶要求的亮度來做調配。In some embodiments, the LED chip set includes at least one of an orange chip, a red chip, a blue chip, and a green chip. Of course, it can also include LED chips of other light-emitting colors. The encapsulation layer is made of glue and metal nitride particle powder. It can be cured after mixing. For example, if the LED chip set is an orange light chip, the LED light-emitting device is an orange light device, which is mixed with glue and metal nitride particle powder and then glued and cured on the LED chip set to obtain an encapsulation layer to reduce the brightness of the orange light device; Or the LED chip set is a red light chip, and the LED light-emitting device is a red light device, which is mixed with glue and metal nitride particle powder and then glued and cured on the LED chip set to obtain an encapsulation layer to reduce the brightness of the red light device; or The LED chip set is a blue light chip, and the LED light-emitting device is a blue light device, which is mixed with glue and metal nitride particle powder and then glued and cured on the LED chip to obtain an encapsulation layer to reduce the brightness of the blue light device; or the LED chip set is green. The LED light-emitting device is a green light device, which is mixed with glue and metal nitride particle powder and then glued and cured on the LED chip set to obtain an encapsulation layer, so as to reduce the brightness of the green light device. Of course, the LED chip set may also include multiple LED chips for light mixing. Further, in the above-mentioned encapsulation layer, the mass ratio of glue, such as silicon glue, and metal nitride particle powder is 100:2~40, and the proportion of glue in the LED light-emitting device can reduce the luminous efficiency of the device. To the original 5~90%, the range can be adjusted by the brightness required by the customer.

在一些實施例中,LED晶片組為藍光晶片,封裝層由膠水、黃色螢光粉及金屬氮化物粒子粉混合後固化得到。其透過藍光晶片加黃色螢光粉的方式,使LED發光裝置實現白光,其由膠水、黃色螢光粉及金屬氮化物粒子粉混合後在LED晶片組上點膠固化得到封裝層,以降低白光裝置的亮度。進一步地,白光裝置的封裝層中,膠水,例如矽膠,及金屬氮化物粒子粉的質量比為100:2~40,其透過配在LED發光裝置中占膠水的比例,可使裝置的發光效率降低到原有的5~90%之間,其範圍可由客戶要求的亮度來做調配。In some embodiments, the LED chip set is a blue light chip, and the encapsulation layer is obtained by mixing glue, yellow phosphor powder and metal nitride particle powder and then curing. It enables the LED light-emitting device to achieve white light by adding yellow phosphor powder to the blue light chip. It is mixed with glue, yellow phosphor powder and metal nitride particle powder and then glued and cured on the LED chip set to obtain an encapsulation layer to reduce white light. The brightness of the device. Further, in the encapsulation layer of the white light device, the mass ratio of glue, such as silica gel, and metal nitride particle powder is 100:2~40, and the proportion of glue in the LED light-emitting device can improve the luminous efficiency of the device. It can be reduced to between 5 and 90% of the original, and the range can be adjusted by the brightness required by the customer.

本發明實施例第二方面提供一種LED發光裝置的封裝方法,如圖2所示,該封裝方法包含如下步驟:A second aspect of the embodiments of the present invention provides a packaging method for an LED light-emitting device. As shown in FIG. 2 , the packaging method includes the following steps:

S01:將LED晶片組固定在支架結構上;S01: Fix the LED chip set on the bracket structure;

S02:在LED晶片組上塗覆包含膠水及具有阻光作用的金屬氮化物粒子粉的混合物;以及S02: coating the LED chip set with a mixture comprising glue and metal nitride particle powder with light blocking effect; and

S03:固化混合物形成封裝層。S03: Curing the mixture to form an encapsulation layer.

本發明提供的LED發光裝置的封裝方法,其在LED晶片組上密封一層含有具有阻光作用的金屬氮化物粒子粉的封裝層,因金屬氮化物粒子粉具有阻擋光及吸收光的作用,因此其可降低裝置的發光效率,這樣可滿足低亮度的需要,該封裝方法透過添加金屬氮化物粒子粉的質量比來調節LED發光裝置亮度達到不同客戶需要,具有製程簡單、成本低、良率好的特點。In the packaging method of the LED light-emitting device provided by the present invention, a packaging layer containing metal nitride particle powder with light blocking effect is sealed on the LED chip set. Because the metal nitride particle powder has the effect of blocking light and absorbing light, therefore It can reduce the luminous efficiency of the device, which can meet the needs of low brightness. The packaging method adjusts the brightness of the LED light-emitting device by adding the mass ratio of metal nitride particle powder to meet the needs of different customers, and has the advantages of simple process, low cost and good yield. specialty.

在一些實施例中,金屬氮化物粒子粉的材料包含氮化鋁;金屬氮化物粒子粉呈灰色;金屬氮化物粒子粉的粒徑為2~10μm。對於金屬氮化物粒子粉的具體選擇參考上文。In some embodiments, the material of the metal nitride particle powder includes aluminum nitride; the metal nitride particle powder is gray; the particle size of the metal nitride particle powder is 2-10 μm. Reference is made to the above for the specific selection of metal nitride particle powders.

在一些實施例中,LED晶片組包含橙光晶片、紅光晶片、藍光晶片及綠光晶片中的至少一種,製備混合物步驟包含:將膠水及金屬氮化物粒子粉按質量比為100:2~40混合即得到混合物。在得到混合物後,將混合物塗布在LED晶片組上,然後固化處理,得到封裝層;如LED晶片組為橙光晶片,即為橙光裝置的封裝,如LED晶片組為紅光晶片,即為紅光裝置的封裝,如LED晶片組為藍光晶片,則為藍光裝置的封裝,如LED晶片組為綠光晶片,則為綠光裝置的封裝;當然,LED晶片組也可包含多種LED晶片進行混光,則為混光封裝。In some embodiments, the LED chip set includes at least one of orange light chips, red light chips, blue light chips and green light chips, and the step of preparing the mixture includes: mixing glue and metal nitride particle powder in a mass ratio of 100:2~ 40 Mix to get a mixture. After the mixture is obtained, the mixture is coated on the LED chip set, and then cured to obtain an encapsulation layer; if the LED chip set is an orange light chip, it is the packaging of the orange light device, and if the LED chip set is a red light chip, it is The package of the red light device, if the LED chip set is a blue light chip, is the package of the blue light device, and if the LED chip set is a green light chip, it is the package of the green light device; of course, the LED chip set can also include a variety of LED chips. Mixed light, it is mixed light package.

在一些實施例中,LED晶片組為藍光晶片,製備混合物的步驟包含:將膠水、黃色螢光粉及金屬氮化物粒子粉混合,其中,膠水及金屬氮化物粒子粉的質量比為100:2~40。在得到混合物後,將混合物塗布在LED晶片組上,然後固化處理,得到封裝層。即透過藍光晶片加黃色螢光粉的方式,實現白光裝置的封裝。In some embodiments, the LED chip set is a blue light chip, and the step of preparing the mixture includes: mixing glue, yellow phosphor powder and metal nitride particle powder, wherein the mass ratio of glue and metal nitride particle powder is 100:2 ~40. After the mixture is obtained, the mixture is coated on the LED chip set, and then cured to obtain an encapsulation layer. That is, the packaging of the white light device is realized by adding a yellow phosphor to a blue light chip.

本發明提供的封裝方法在LED支架結構杯內固定LED晶片組,然後打金線,在杯中添加混合好的金屬氮化物粒子粉與膠水(如是白光裝置,進一步添加黃色螢光粉)後固化,實現密封封裝,在封裝過程中,金屬氮化物粒子粉不與其它粉塵(如螢光粉)反應,而且可使裝置的發光效率降低到原有的5~90%之間;例如,未添加金屬氮化物粒子粉的封裝層的密封封裝的發光亮度為1000MCD,添加金屬氮化物粒子粉封裝後,裝置的發光亮度可最低調至50MCD。In the packaging method provided by the present invention, the LED chip group is fixed in the LED bracket structure cup, then gold wires are made, and the mixed metal nitride particle powder and glue (in the case of a white light device, further add yellow fluorescent powder) are added to the cup and then cured , to achieve sealed packaging. During the packaging process, the metal nitride particle powder does not react with other dust (such as phosphor powder), and the luminous efficiency of the device can be reduced to between 5 and 90% of the original; for example, no added The luminous brightness of the sealed package of the encapsulation layer of the metal nitride particle powder is 1000 MCD. After adding the metal nitride particle powder to encapsulate, the luminous brightness of the device can be reduced to a minimum of 50 MCD.

本發明設計上優選功率≤0.1W的小功率規格的LED發光裝置,不論何種封裝形式,其在產品製程上與現有配粉製程一致,在未來一些超低亮市場上,如家具指示、車用背光等市場上可直接透過添加金屬氮化物粒子粉質量百分比2%~40%來調節LED發光裝置亮度。In the design of the present invention, a low-power LED light-emitting device with a power of ≤ 0.1W is preferred. Regardless of the packaging form, its product process is consistent with the existing powder preparation process. The brightness of LED light-emitting devices can be adjusted directly by adding 2%~40% by mass of metal nitride particle powder in the market such as backlight.

下面結合具體實施例進行說明。The following description will be given in conjunction with specific embodiments.

實施例1Example 1

一種LED發光裝置包含支架結構、固定於支架結構上的LED晶片組及覆蓋LED晶片組的封裝層;其中,LED晶片組為峰值波長約為602nm的橙色晶片,封裝層由膠水及氮化鋁粒子粉末按不同比例混合製備得到。An LED light-emitting device includes a bracket structure, an LED chip set fixed on the bracket structure, and an encapsulation layer covering the LED chip set; wherein, the LED chip set is an orange chip with a peak wavelength of about 602 nm, and the encapsulation layer is made of glue and aluminum nitride particles. The powders are prepared by mixing in different proportions.

表1是該實施例相同規格的LED發光裝置中,不同配比比例的氮化鋁粒子粉末對應的測試數據,膠水按10g計,不同氮化鋁粒子粉末比例的結果數據對比可知,10g膠水:3g氮化鋁粉(即氮化鋁粉占30%)配比的LED發光裝置,其亮度降低了90%,效果最顯著。 表1 膠水與氮化鋁的比例 10:0(即無氮化鋁) 10:0.3 10:0.6 10:0.9 10:1.2 10:1.5 10:3 參數 IF VF IV WL IF VF IV WL IF VF IV WL IF VF IV WL IV IV IV 1 20 2.06 241.1 602.3 20 2.06 190.8 602.5 20 2.06 148.8 602.5 20 2.06 119.0 602.5 93.9 74.1 24.5 2 20 2.06 245.9 602.3 20 2.06 195.8 602.4 20 2.06 154.8 602.5 20 2.06 112.3 602.6 88.6 69.9 23.1 3 20 2.06 247.6 602.3 20 2.06 192.7 602.4 20 2.06 150.7 602.5 20 2.06 116.0 602.5 91.5 72.2 23.9 4 20 2.06 242.0 602.3 20 2.06 191.1 602.5 20 2.06 150.2 602.5 20 2.06 129.0 602.5 101.7 80.3 26.5 5 20 2.06 249.2 602.2 20 2.06 188.1 602.4 20 2.06 155.5 602.5 20 2.06 118.3 602.5 93.3 73.6 24.3 AVG 20 2.06 245.14 602.27 20 2.06 191.7 602.43 20 2.06 152 602.48 20 2.06 118.89 602.51 93.9 74.1 24.5 Table 1 is the test data corresponding to different proportions of aluminum nitride particle powder in the LED light-emitting device of the same specification of this embodiment. The glue is calculated as 10g, and the comparison of the result data of different aluminum nitride particle powder proportions shows that 10g of glue: The LED light-emitting device with the ratio of 3g aluminum nitride powder (that is, the aluminum nitride powder accounts for 30%) reduces the brightness by 90%, and the effect is the most significant. Table 1 Glue to Aluminum Nitride Ratio 10:0 (i.e. no aluminum nitride) 10:0.3 10:0.6 10:0.9 10:1.2 10:1.5 10:3 parameter IF VF IV WL IF VF IV WL IF VF IV WL IF VF IV WL IV IV IV 1 20 2.06 241.1 602.3 20 2.06 190.8 602.5 20 2.06 148.8 602.5 20 2.06 119.0 602.5 93.9 74.1 24.5 2 20 2.06 245.9 602.3 20 2.06 195.8 602.4 20 2.06 154.8 602.5 20 2.06 112.3 602.6 88.6 69.9 23.1 3 20 2.06 247.6 602.3 20 2.06 192.7 602.4 20 2.06 150.7 602.5 20 2.06 116.0 602.5 91.5 72.2 23.9 4 20 2.06 242.0 602.3 20 2.06 191.1 602.5 20 2.06 150.2 602.5 20 2.06 129.0 602.5 101.7 80.3 26.5 5 20 2.06 249.2 602.2 20 2.06 188.1 602.4 20 2.06 155.5 602.5 20 2.06 118.3 602.5 93.3 73.6 24.3 AVG 20 2.06 245.14 602.27 20 2.06 191.7 602.43 20 2.06 152 602.48 20 2.06 118.89 602.51 93.9 74.1 24.5

表1中:IF為順向電流,VF為順向電壓,IV為發光強度,WL為波長,AVG為平均值。In Table 1: IF is the forward current, VF is the forward voltage, IV is the luminous intensity, WL is the wavelength, and AVG is the average value.

實施例2Example 2

一種LED發光裝置包含支架結構、固定於支架結構上的LED晶片組及覆蓋LED晶片組的封裝層;其中,LED晶片組為峰值波長約為461~463nm的藍光晶片,封裝層由膠水及氮化鋁粒子粉末按不同比例混合製備得到。An LED light-emitting device includes a bracket structure, an LED chip set fixed on the bracket structure, and an encapsulation layer covering the LED chip set; wherein, the LED chip set is a blue light chip with a peak wavelength of about 461-463 nm, and the encapsulation layer is made of glue and nitride. The aluminum particle powder is prepared by mixing in different proportions.

表2是該實施例相同規格的LED發光裝置中,不同配比比例的氮化鋁粒子粉末對應的測試數據,膠水按10g計,不同氮化鋁粒子粉末比例的結果數據對比可知,10g膠水:5g氮化鋁粉(即氮化鋁粉占50%)配比的LED發光裝置,其亮度降低了99%,但是該比例內的氮化鋁粉占膠水重量一半,這樣作業時有出膠制程問題,因此,綜合考慮製程,可將規格的上限定位為10:4(即氮化鋁粉重量比例為40%)。 表2 膠水與氮化鋁的比例 10:0(即無氮化鋁) 10:1.5 10:3 10:5 IF VF IV WL IF VF IV WL IF VF IV WL IF VF IV WL 1 20 3.25 230.0 461.7 20 3.28 63.5 462.3 20 3.27 14.1 462.7 20 3.29 2.0 463.0 2 20 3.3 234.0 461.4 20 3.29 63.2 462.3 20 3.29 14.3 462.6 20 3.3 1.9 463.0 3 20 3.3 229.3 461.3 20 3.27 60.9 462.3 20 3.29 15.9 462.6 20 3.29 2.7 462.9 4 20 3.29 233.1 461.5 20 3.28 67.8 462.4 20 3.28 14.7 462.8 20 3.29 2.9 462.9 5 20 3.29 229.2 461.5 20 3.29 63.6 462.1 20 3.28 15.5 462.6 20 3.29 2.1 463.1 AVG 20 3.29 231.1 461.5 20 3.28 63.8 462.3 20 3.28 14.9 462.6 20 3.29 2.3 463 Table 2 is the test data corresponding to different proportions of aluminum nitride particle powder in the LED light-emitting device of the same specification of this example. The glue is calculated as 10g. The comparison of the result data of different aluminum nitride particle powder proportions shows that 10g of glue: 5g aluminum nitride powder (that is, aluminum nitride powder accounts for 50%) of the LED light-emitting device, the brightness is reduced by 99%, but the aluminum nitride powder in this proportion accounts for half of the glue weight, so there is a glue dispensing process during operation. Therefore, considering the process, the upper limit of the specification can be positioned as 10:4 (that is, the weight ratio of aluminum nitride powder is 40%). Table 2 Glue to Aluminum Nitride Ratio 10:0 (i.e. no aluminum nitride) 10:1.5 10:3 10:5 IF VF IV WL IF VF IV WL IF VF IV WL IF VF IV WL 1 20 3.25 230.0 461.7 20 3.28 63.5 462.3 20 3.27 14.1 462.7 20 3.29 2.0 463.0 2 20 3.3 234.0 461.4 20 3.29 63.2 462.3 20 3.29 14.3 462.6 20 3.3 1.9 463.0 3 20 3.3 229.3 461.3 20 3.27 60.9 462.3 20 3.29 15.9 462.6 20 3.29 2.7 462.9 4 20 3.29 233.1 461.5 20 3.28 67.8 462.4 20 3.28 14.7 462.8 20 3.29 2.9 462.9 5 20 3.29 229.2 461.5 20 3.29 63.6 462.1 20 3.28 15.5 462.6 20 3.29 2.1 463.1 AVG 20 3.29 231.1 461.5 20 3.28 63.8 462.3 20 3.28 14.9 462.6 20 3.29 2.3 463

表2中:IF為順向電流,VF為順向電壓,IV為發光強度,WL為波長,AVG為平均值。In Table 2: IF is the forward current, VF is the forward voltage, IV is the luminous intensity, WL is the wavelength, and AVG is the average value.

實施例3Example 3

一種LED發光裝置包含支架結構、固定於支架結構上的LED晶片及覆蓋LED晶片組的封裝層;其中,LED晶片組為藍光晶片,封裝層由膠水、黃色螢光粉及氮化鋁粒子粉末混合製備得到,而膠水及氮化鋁粒子粉末的質量比為10:4,LED發光裝置透過藍光晶片加黃色螢光粉的方式,實現白光。An LED light-emitting device comprises a bracket structure, an LED chip fixed on the bracket structure, and an encapsulation layer covering the LED chip group; wherein, the LED chip group is a blue light chip, and the encapsulation layer is mixed with glue, yellow phosphor powder and aluminum nitride particle powder The preparation is obtained, and the mass ratio of the glue and the aluminum nitride particle powder is 10:4, and the LED light-emitting device realizes white light through the blue light chip and the yellow phosphor powder.

表3是該實施例相同規格的LED發光裝置,與不含氮化鋁粉的白光LED發光裝置對應的測試數據,因本實施例添加40%的氮化鋁粉,可顯著降低發光亮度。 表3 10:0(即無氮化鋁) 10:4 IF VF IV X Y IF VF IV X Y 1 20 3.24 1162.96 0.2445 0.2314 1 20 3.29 267.09 0.24 0.222 2 20 3.26 1189.76 0.2465 0.2324 2 20 3.26 267.71 0.2328 0.2077 3 20 3.22 1139.56 0.2426 0.227 3 20 3.29 268.58 0.2281 0.199 4 20 3.24 1148.45 0.2413 0.2235 4 20 3.29 283.54 0.2419 0.2247 5 20 3.27 1177.74 0.2433 0.2258 5 20 3.27 270.9 0.2339 0.2104 AVG 20 3.25 1163.69 0.2436 0.228 AVG 20 3.28 271.57 0.2353 0.2128 Table 3 shows the test data corresponding to the LED light-emitting device of the same specification in this example, and the white light LED light-emitting device without aluminum nitride powder. Because the addition of 40% aluminum nitride powder in this example can significantly reduce the luminous brightness. table 3 10:0 (i.e. no aluminum nitride) 10:4 IF VF IV X Y IF VF IV X Y 1 20 3.24 1162.96 0.2445 0.2314 1 20 3.29 267.09 0.24 0.222 2 20 3.26 1189.76 0.2465 0.2324 2 20 3.26 267.71 0.2328 0.2077 3 20 3.22 1139.56 0.2426 0.227 3 20 3.29 268.58 0.2281 0.199 4 20 3.24 1148.45 0.2413 0.2235 4 20 3.29 283.54 0.2419 0.2247 5 20 3.27 1177.74 0.2433 0.2258 5 20 3.27 270.9 0.2339 0.2104 AVG 20 3.25 1163.69 0.2436 0.228 AVG 20 3.28 271.57 0.2353 0.2128

表3中:IF為順向電流,VF為順向電壓,IV為發光強度,X/Y為色坐標,AVG為平均值。In Table 3: IF is the forward current, VF is the forward voltage, IV is the luminous intensity, X/Y is the color coordinate, and AVG is the average value.

另外,與現有使用黑殼LED外封支架結構(無氮化鋁粉)對比,目前黑殼LED外封支架結構雖然可降低亮度76%,但因不同使用場域要求亮度規格不同,黑殼LED外封支架結構的規格亮度卻無法跟隨變動,而且黑殼LED外封支架結構的特殊唯一性,其具有單價單一規格較貴、難以推廣的缺陷。In addition, compared with the existing black-shell LED encapsulation bracket structure (without aluminum nitride powder), although the current black-shell LED encapsulation bracket structure can reduce the brightness by 76%, due to the different requirements for brightness specifications in different application fields, black-shell LEDs The specification and brightness of the encapsulated bracket structure cannot follow the change, and the special and unique structure of the black-shell LED encapsulated bracket structure has the defects of expensive unit price and single specification, which is difficult to promote.

以上所述僅為本發明的較佳實施例而已,並不用以限制本發明,凡在本發明的精神及原則之內所作的任何修改、等同替換及改進等,均應包含在本發明的保護範圍之內。The above descriptions are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included in the protection of the present invention. within the range.

1:支架結構 2:LED晶片組 3:封裝層 S01,S02,S03:步驟 1: Bracket structure 2: LED Chipset 3: Encapsulation layer S01, S02, S03: Steps

為了更清楚地說明本發明實施例中的技術方案,下面將對實施例描述中所需要使用的附圖作簡單地介紹,顯而易見地,下面描述中的附圖僅僅是本發明的一些實施例,對於所屬技術領域中具有通常知識者而言,在不付出創造性勞動的前提下,還可根據這些附圖獲得其它的附圖。 圖1是本發明實施例提供的LED發光裝置的結構示意圖; 圖2是本發明實施例提供的LED發光裝置的封裝方法流程示意圖。 In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those with ordinary knowledge in the technical field, other drawings can also be obtained from these drawings without any creative effort. 1 is a schematic structural diagram of an LED light-emitting device provided by an embodiment of the present invention; FIG. 2 is a schematic flowchart of a packaging method for an LED light emitting device provided by an embodiment of the present invention.

1:支架結構 1: Bracket structure

2:LED晶片組 2: LED Chipset

3:封裝層 3: Encapsulation layer

Claims (8)

一種LED發光裝置,該LED發光裝置包含一支架結構、固定於該支架結構上的一LED晶片組及覆蓋該LED晶片組的一封裝層;其中,該封裝層含有具有阻光作用的一金屬氮化物粒子粉;其中:該金屬氮化物粒子粉的材料包含氮化鋁;及/或,該金屬氮化物粒子粉呈灰色;及/或,該金屬氮化物粒子粉的粒徑為2~10μm。 An LED light-emitting device, the LED light-emitting device comprises a support structure, an LED chip set fixed on the support structure, and an encapsulation layer covering the LED chip set; wherein, the encapsulation layer contains a metal nitrogen with light blocking function Compound particle powder; wherein: the material of the metal nitride particle powder comprises aluminum nitride; and/or the metal nitride particle powder is gray; and/or the particle size of the metal nitride particle powder is 2-10 μm. 如請求項1所述之LED發光裝置,其中該LED發光裝置的功率
Figure 109141160-A0305-02-0012-1
0.1W。
The LED lighting device according to claim 1, wherein the power of the LED lighting device
Figure 109141160-A0305-02-0012-1
0.1W.
如請求項1所述之LED發光裝置,其中該LED晶片組包含橙光晶片、紅光晶片、藍光晶片及綠光晶片中的至少一種,該封裝層由膠水及該金屬氮化物粒子粉混合後固化得到。 The LED light-emitting device according to claim 1, wherein the LED chip set comprises at least one of an orange chip, a red chip, a blue chip and a green chip, and the encapsulation layer is mixed with glue and the metal nitride particle powder. solidified. 如請求項1所述之LED發光裝置,其中該LED晶片組為藍光晶片,該封裝層由膠水、黃色螢光粉及該金屬氮化物粒子粉混合後固化得到。 The LED light-emitting device according to claim 1, wherein the LED chip set is a blue light chip, and the encapsulation layer is obtained by mixing glue, yellow phosphor powder and the metal nitride particle powder and then curing. 如請求項3或請求項4所述之LED發光裝置,其中膠水及該金屬氮化物粒子粉的質量比為100:2~40。 The LED light-emitting device according to claim 3 or claim 4, wherein the mass ratio of the glue and the metal nitride particle powder is 100:2-40. 一種LED發光裝置的封裝方法,其包含如下步驟:將一LED晶片組固定在一支架結構上;在該LED晶片組上塗覆包含一膠水及具有阻光作用的一金屬氮化物粒子粉的一混合物;以及 固化該混合物形成一封裝層;其中:該金屬氮化物粒子粉的材料包含氮化鋁;及/或,該金屬氮化物粒子粉呈灰色;及/或,該金屬氮化物粒子粉的粒徑為2~10μm。 A packaging method for an LED light-emitting device, comprising the following steps: fixing an LED chip set on a support structure; coating a mixture comprising a glue and a metal nitride particle powder with light blocking effect on the LED chip set ;as well as The mixture is cured to form an encapsulation layer; wherein: the material of the metal nitride particle powder comprises aluminum nitride; and/or the metal nitride particle powder is gray; and/or the particle size of the metal nitride particle powder is 2~10μm. 如請求項6所述之LED發光裝置的封裝方法,其中該LED晶片組包含橙光晶片、紅光晶片、藍光晶片及綠光晶片中的至少一種,製備該混合物的步驟包含:將該膠水及該金屬氮化物粒子粉按質量比為100:2~40混合。 The packaging method for an LED light-emitting device as claimed in claim 6, wherein the LED chip set comprises at least one of an orange light chip, a red light chip, a blue light chip and a green light chip, and the step of preparing the mixture comprises: the glue and the The metal nitride particle powder is mixed in a mass ratio of 100:2-40. 如請求項6所述之LED發光裝置的封裝方法,其中該LED晶片組為藍光晶片,製備該混合物的步驟包含:將該膠水、黃色螢光粉及該金屬氮化物粒子粉混合,其中,該膠水及該金屬氮化物粒子粉的質量比為100:2~40。 The packaging method for an LED light-emitting device according to claim 6, wherein the LED chip set is a blue light chip, and the step of preparing the mixture comprises: mixing the glue, the yellow phosphor and the metal nitride particle powder, wherein the The mass ratio of the glue and the metal nitride particle powder is 100:2~40.
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Publication number Priority date Publication date Assignee Title
CN109962144A (en) * 2017-12-22 2019-07-02 南京澳特利光电科技有限公司 A kind of low-light level LED

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