CN104183688B - Wavelength conversion system - Google Patents
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- CN104183688B CN104183688B CN201410347474.3A CN201410347474A CN104183688B CN 104183688 B CN104183688 B CN 104183688B CN 201410347474 A CN201410347474 A CN 201410347474A CN 104183688 B CN104183688 B CN 104183688B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 64
- 239000000463 material Substances 0.000 claims description 30
- 230000008859 change Effects 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 10
- 230000005284 excitation Effects 0.000 description 32
- 239000000203 mixture Substances 0.000 description 17
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002223 garnet Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 150000004760 silicates Chemical class 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium arsenic Chemical compound 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 238000005034 decoration Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a wavelength conversion system which includes a wavelength conversion body which includes a first area and a second area; a first light source which emits first light, wherein the first light passes the first area so as to generate first mixing light; a second light source which emits second light, wherein the second light passes the second area so as to generate second mixing light; and a carrier which supports the first light source and the second light source. The wavelength difference of the first light and the second light is more than 1nm and less than 20nm, and the color temperature difference of the first mixing light and the second mixing light is smaller than 100K.
Description
It is on July 26th, 2007 and the Chinese invention patent of entitled " Wavelength conversion system " applying date that the application is
The divisional application of application 200710138138.8.
Technical field
Can changing with excitation wavelength and producing corresponding ripple the present invention relates to a kind of Wavelength conversion system, more particularly to one kind
Frequency spectrum long is maintaining launching light in the Wavelength conversion system of stable color temperature.
Background technology
Light emitting diode (Light-Emitting Diode；LED) because being answered under the alive boundary's energy-conservation trend of its high energy source efficiency
It is wide with day, it has been directed into the various devices of outdoor lighting, the vehicles or even domestic lighting, such as：Street lamp (Street
Light), traffic lights (Traffic Light), outdoor display (Outdoor Display), headlight (Headlamp), car
Taillight (Tail Light), the 3rd brake light (Center High Mounted Stop Lamps；CHMSL), ornament lamp
(Decoration Light) etc..
A kind of basic structure of light-emitting diode chip for backlight unit (chip) is mainly p-n junction (p-n junction), p-type semiconductor
Electronics in hole in material and n-type semiconductor emits beam after being combined under bias.The area emitted beam in structure
Domain is sometimes referred to as active layer (Active Layer) or luminescent layer (Light-Emitting Layer).The ripple that luminescent layer is produced
The material that length is used depending on basic structure.Feux rouges system can be by using gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), aluminium arsenic
The structure of the main material such as gallium (AlGaAs) or AlGaInP (AlGaInP) is obtained.Green glow system can be by using gallium phosphide
(GaP) structure with the main material such as cadmium-zinc selenide (ZnCdSe) is obtained.Blue light system can be by using carborundum (SiC) and silicon nitride
Etc. (GaN) structure of main material is obtained.Different materials are generally grown on different substrates, such as：Gallium phosphide (GaP), arsenic
Gallium (GaAs), carborundum (SiC) and sapphire (Sapphire) etc..
Light-emitting diode chip for backlight unit common in the market, in addition to white light, can launch and cover nearly all visible wavelengths
White light and ultraviolet light (Ultraviolet in scope (400nm~750nm)；UV).There are several sides for being used to produce white light
Method, such as：Mixing be respectively from red bluish-green color chip red bluish-green three coloured light, using ultraviolet excitation fluorescent material, use blue light
Excitated fluorescent powder, (also known as light circulates semiconductor LED (Photo-recycling to use semiconductor wavelength transition material
Semiconductor LED；PRS LED)) and use dyestuff (Dye) etc..Wherein excite yttroalumite with using blue chip again
Garnet (Yttrium aluminium garnet；YAG) fluorophor produces white light with complementary colours (Complementary Color)
It is most common business method.For example, exciting YAG using 460nm blue chips:Ce fluorophor produces the gold-tinted of 570nm or so,
The ratio of blue light and gold-tinted is adjusted by controlling phosphor concentration and thickness, the white light of multiple color temperatures can be produced.
Fluorophor (Phosphor) absorbs short-wavelength light to launch long wavelength light, that is, absorbs high-energy light and launch low
Energy light.Fluorophor excites frequency with frequency range (Excitation Band) and transmitting frequency range (Emission Band) is excited
The main Wavelength distribution of section is shorter than the main Wavelength distribution of transmitting frequency range, but this two frequency range may also have subregion phase mutual respect
It is folded.Absorb frequency range and be referred to as Stoker displacement (Stokes Shift) with the peak difference of transmitting frequency range.Fall into and excite appointing in frequency range
One wavelength can all make fluorophor give off the emission spectrum being substantially the same, however, fluorophor is for different absorbing wavelengths
Its launching efficiency is usual and differs, depending on the composition of fluorophor.
On the other hand, plurality of chip is showed in a wafer (Wafer) Wavelength distribution is simultaneously uneven, its
Span may be up to 10~20nm or bigger.Therefore, if with the single fluorophor all chips of collocation for planting formula, whether directly covering
It is placed on chip, also or with chip together encapsulates, the white light reference color temperature variation of finished product output is obvious, influences application product product
The uniformity of matter performance.
As shown in Figure 1A, LED light source 12 sends the blue light 11 and 13 of specific wavelength, and the wherein excitated fluorescent powder 14 of blue light 13 is produced
Raw gold-tinted 15, blue light 11 is mixed to form white light 17 with gold-tinted 15.But, when the blue light wavelength that LED light source 12 is produced changes, but still
Fall within exciting so that the frequency spectrum that gold-tinted 15 is presented remains unchanged in frequency range for fluorescent material 14.Therefore, because the difference of blue light wavelength
It is different so that the spectrum of wavelengths of white light 17 for blending together also changes.
Additionally, CIE chromaticity diagram (Chromaticity Diagram) as shown in Figure 1B, 460nm blue lights and rigid condition
Under excite white light its colour temperature of 571nm gold-tinteds mixing that YAG fluorophor produces to be located at 6000K or so, if but blue light wavelength is upper and lower
470nm or 450nm is offset to, because the yellow wavelengths being excited keep steady, the white light colour temperature for blending is also with the change of blue light wavelength
Change is moved up and down to 10000K and 5000K, and the change of this kind of amplitude is generally impermissible in general application.Therefore, chip is necessary
Be applicable to the fluorophor of specified conditions or characteristic with screening (Binning) rear by classification (Sorting) has to produce
The coloured light of stable color temperature.
The content of the invention
The Wavelength conversion system of one embodiment of the invention includes wavelength conversion body, and it can be with first wave length the
The second electromagnetic radiation with second wave length is reflected under one electromagnetic radiation irradiation, the energy level of the first electromagnetic radiation is higher than the second electricity
The energy level of magnetic radiation, and first wave length is presented positive correlation with second wave length.
In multiple preferences, the scope of above-mentioned first wave length is 200nm~530nm；The model of above-mentioned second wave length
It is 480nm~700nm to enclose；Above-mentioned wavelength conversion body includes yttrium-aluminium-garnet fluorophor and silicate-based phosphors.
Wavelength conversion system in another embodiment of the present invention includes the first excitation wavelength launched from the first illuminator；
More than the first launch wavelength of the first excitation wavelength；Launch the second excitation wavelength from the second illuminator；And excited more than second
Second launch wavelength of wavelength；Wherein, the first excitation wavelength, the first launch wavelength, the second excitation wavelength and the second launch wavelength
Respectively positioned at the periphery of cie color coordinate diagram, the first line connects the first excitation wavelength and the first launch wavelength, and the second line connects
The second excitation wavelength and the second launch wavelength are connect, the first line and the second line are intersected within this cie color coordinate diagram.
In multiple preferences, the scope of above-mentioned first excitation wavelength and the second excitation wavelength be respectively 200nm~
530nm；The scope of the first launch wavelength and the second launch wavelength is respectively 480nm~700nm；First line and the second line phase
Meet at white light field；The composition material of the first illuminator and the second illuminator includes nitrogen.Also, the first excitation wavelength and the
Two excitation wavelengths are respectively converted into the first launch wavelength and the second launch wavelength with via same or similar wavelength conversion body especially
It is preferred, so-called similar wavelength conversion body refers to the identical person of main component, wherein, wavelength conversion body is especially with comprising yttrium-aluminium-garnet
Fluorophor and silicate-based phosphors are preferred.
Wavelength conversion system in another embodiment of the present invention is included：
Radiation source；First fluorescent material, can be in wavelength band by radiation source excitation, and this wavelength band has a short wavelength
With a long wavelength；And second fluorescent material, can be in this wavelength band by radiation source excitation；Wherein, in the case where short wavelength excites, the
The launching efficiency of one fluorescent material is higher than the launching efficiency of the second fluorescent material, on long-wavelength excitation, the first fluorescent material
Launching efficiency of the launching efficiency less than the second fluorescent material.
In multiple preferences, above-mentioned radiation source sends light of the wavelength between 200nm~530nm；Above-mentioned radiation source bag
Nitrogenate system optoelectronic semiconductor；Above-mentioned first fluorescent material includes silicate-based phosphors；Above-mentioned second fluorescent material is included
Yttrium-aluminium-garnet fluorophor.
Wavelength convert system in one embodiment of the invention includes two or more light sources, two light sources in these light sources
Wavelength difference is not less than 1nm and no more than 20nm；And wavelength conversion body, on the optical path of this two light source, and can be by this two light source
In a light source activation produce the first mixed light, by another light source activation produce the second mixed light, the first mixed light and second
The color temperature difference of mixed light is not more than 100K.
In multiple preferences, at least one includes light emitting diode in above-mentioned these light sources；The hair of above-mentioned these light sources
Optical wavelength is between 200nm~530nm.
Wavelength conversion system in one embodiment of the invention includes semiconductor light emitting structure, and body, sky are provided comprising electronics
Cave provides body and provides the luminescent layer between body and hole offer body positioned at electronics；And wavelength conversion body, positioned at semiconductor light emitting knot
On the light extraction interface of structure, and light can be transfused under a wavelength band excites generation output light, and input light and output light ripple
It is long that positive correlation is presented.Preferably, the material of above-mentioned semiconductor light emitting structure includes nitrogen.
Wavelength conversion system in one embodiment of the invention is included：
Light emitting source, is freely selected from any using light emitting diode on chip；And wavelength conversion body, positioned at luminous
On the light extraction interface in source, input light can be responded and produce output light, and input light forms a mixed-color light with output light.Preferably,
Above-mentioned light emitting diode includes nitride light emitting diode.
Wavelength conversion system in one embodiment of the invention is included：One wavelength conversion body includes a first area and one the
Two regions；One first light source sends one first light, and first light passes through the first area to produce one first mixed light；One
Two light sources send one second light, and second light passes through the second area to produce one second mixed light；And a carrier supported
First light source and the secondary light source；Wherein, the wavelength difference of first light and second light is more than 1nm and below 20nm；With
And wherein, the color temperature difference of first mixed light and second mixed light is less than 100K.
Wavelength conversion system in one embodiment of the invention is included：One wavelength conversion body includes a first area and one the
Two regions；One first light source sends one first light, and first light passes through the first area to produce one first launching light；And
One secondary light source sends one second light, and second light passes through the second area to produce one second launching light；Wherein, this first
Launching light has a main emission wavelength lambda1, 480nm≤λ1≤ 700nm and second launching light have a main emission wavelength lambda1,
470nm≦λ1≦650nm；And wherein, the wavelength difference of first light and second light is more than 1nm and below 20nm.
Wavelength conversion system in one embodiment of the invention is included：First light source, can be driven in the first electric current is lower；The
Two light sources, can be driven in the second electric current is lower；One wavelength conversion body is located on first light source and the secondary light source, and the wavelength turns
Change body in can be excited by first light source and the secondary light source under one first operating condition with produce one first mixed light and
In under one second state by this first and light source and the secondary light source excite to produce one second mixed light；Wherein, when this
When one operating condition is converted into second operating condition, first electric current is presented inverse change with the second electric current system；And its
In, the color temperature difference of first mixed light and second mixed light is less than 100K.
Wavelength conversion system in one embodiment of the invention is included：A plurality of ray structures, its distance that is separated from each other
And it is more than 1nm and below 20nm each to have the wavelength difference between a dominant wavelength, those dominant wavelengths；And a wavelength convert position
In on a plurality of ray structures.
Brief description of the drawings
Figure 1A and Figure 1B is the schematic diagram and cie color coordinate diagram of the Wavelength conversion system for illustrating known technology；
Fig. 2A is to show exciting and emission spectrum figure according to the YAG fluorophor of one embodiment of the invention；
Fig. 2 B are to show exciting and emission spectrum figure according to the silicate-based phosphors of one embodiment of the invention；
Fig. 2 C are to show the cie color coordinate diagram according to the Wavelength conversion system of one embodiment of the invention；
Fig. 3 is to show the schematic diagram according to the Wavelength conversion system of another embodiment of the present invention；
Fig. 4 is to show the schematic diagram according to the Wavelength conversion system of further embodiment of this invention.
Description of reference numerals
11 blue light 31B light
12 LED light source 31C launching lights
13 the first light sources of blue light 32A
14 fluorescent material 32B secondary light sources
The 15 unconverted light of gold-tinted 33A
17 white light 33B light
22 carrier 33C launching lights
The wavelength conversion body of 24 ray structure 34
26 fluorophor 35A mixed lights
30 Wavelength conversion system 35B mixed lights
The unconverted light of 31A
Specific embodiment
Hereinafter coordinate schema explanation embodiments of the invention.
In one embodiment of the invention, YAG is chosen and mixes with the class fluorophor of silicates (Silicate-based) two
Conjunction formed hybrid fluorophor (hereinafter referred to as " mixture ", but be not limited to only more than two species material or quantity).This implementation
In example, as shown in Figure 2 A, it has the frequency range that excites of 200nm~530nm, the master of 480nm~700nm to the frequency spectrum of YAG fluorophor
Transmitting frequency range, the peak wavelength with about 530nm；The frequency spectrum of silicate-based phosphors as shown in Figure 2 B, its have 300nm~
500nm's excites frequency range, the main transmitting frequency range of 470nm~650nm, the peak wavelength with about 525nm.
As shown in Fig. 2A and 2B, YAG fluorophor is in excitation wavelength 470nm or so with efficiency higher；Silicates are glimmering
Body of light is in excitation wavelength 450nm or so with efficiency higher.When excitation wavelength is moved to 450nm, YAG fluorophor by 470nm
Light conversion efficiency will reduce, and the light conversion efficiency of silicate-based phosphors will improve.In other words, two kinds of fluorophor are mixed
Afterwards, when excitation wavelength is moved to 450nm by 470nm, the shorter wavelength fluorescence of wherein silicate-based phosphors contribution accounts for totality
The ratio of fluorescence will increase, and the ratio that the longer wavelength fluorescence of YAG fluorophor contribution accounts for overall fluorescent will be reduced.Then, YAG
The launching light ratio of both fluorophor and silicate-based phosphors can change with the change of excitation wavelength.In this example, excite
Wavelength shortens, and the spectrum of wavelengths of the mixing light that mixture is produced is also directed to the movement of shortwave length direction, that is, improves short-wavelength light
Weight in light is mixed.Therefore, the launching light of mixture can maintain stabilization with the coloured light colour temperature that exciting light blendes together
In interval range.Conversely, when excitation wavelength is offset to long wavelength by short wavelength, can according to the fluorescence mixture of the present embodiment
Produce the launching light towards long wavelength's movement.By the fluorescence mixture of the present embodiment, launch wavelength and excitation wavelength can be caused
Between have positive continuous action relation.
CIE chromaticity diagram shows the exciting light of one embodiment of the invention with the relation of launching light or Wavelength conversion system as schemed
Shown in 2C.A kind of fluorophor and another fluorophor, or any two fluorophor in mixture, the respective representative of two fluorophor are swashed
Hair wavelength intersects on the diagram with the line for representing launch wavelength.Camber line in the sector in the cross figure lower left corner is represented and excited
The wave-length coverage of light, the camber line in the sector in the cross figure upper right corner represents the ripple that launching light is produced after fluorophor is excited
Scope long, the chromaticity coordinate of the coloured light that launching light and the exciting light do not changed blend together is located in CIE diagram on cross figure or it
Near.In the Wavelength distribution and mixture of appropriate adjustment excitation source after the ratio of fluorophor, Wavelength conversion system can be made
The colour temperature of presentation is confined to the vicinity of line segment intersection region.The coloured light that therefore, it can to make system to produce is maintained at metastable
Colour temperature, specifically, using the fluorescence mixture of the present embodiment in the blue-ray LED core each other with different wavelength or frequency spectrum
Piece, the light for coming from these chips excites the gold-tinted produced by mixture can to mix quality with the original blue light that chip is produced
The less white light of temperature variation.
In figure, the line of 450nm and 569nm is represented via the issuable coloured light of simple silicate-based phosphors institute,
The line of 470nm and 573nm is represented via the issuable coloured light of simple YAG fluorophor institute.Two lines intersect at about 6000K's
At white light.YAG fluorophor and silicate-based phosphors with specific mixed proportion and configuration, the exciting light between 450nm~470nm
The launching light of the dominant wavelength between 569nm~573nm can be produced and the stable white light of 6000K or so is blended together.
As shown in figure 3, another embodiment of the present invention is comprising carrier 22, ray structure 24 and is covered in ray structure
Fluorophor 26 on 24, the number of wherein ray structure 24 is only the disclosure for illustrating and being not used to limit the present embodiment.Carrier 22
Including but not limited to growth substrate and the material or structure that can be used to dispose ray structure 24.The wavelength of ray structure 24 is in an area
Interior that change is presented, this interval may be in several nanometers, the permissible range of tens nanometer or fluorophor 26, such as：10nm~
20nm.The main light emission wavelength of ray structure 24 is located at visible wavelength, for example：420nm~480nm may be used to excite fluorescence
The wavelength of body 26.The Wavelength distribution of ray structure 24 may be Gaussian Profile (Gaussian distribution) on carrier 22
Or abnormal distribution.The wavelength of transmitted light mobile trend of fluorophor 26 is the trend for following excitation wavelength.Therefore, though each
The excitation wavelength of ray structure 24 is not quite similar, and fluorophor 26 can be by following in the launch wavelength produced by each ray structure
Or the movement tendency of excitation wavelength is followed the trail of, or spontaneously adjusted according to the change of excitation wavelength.Thus light-emitting junction can be reduced
Influence of the quality discrepancies such as the emission wavelength of structure 24 for mixed light color diversity factor or perceived coloured light quality.For example：Using this
The fluorophor 26 of embodiment can make the color that the launching light that the exciting light for coming from ray structure 24 is produced with fluorophor 26 is blended together
Light its colour temperature is maintained in the interval of stabilization, this interval scope be depending on the fluorophor, the requirement specification of user for using,
And/or use environment.
In detail in this figure, the covering kenel of fluorophor 26 is only used to illustrate the theory of the present embodiment, and fluorophor 26 is worked as and can be appointed
The mode of meaning is covered on ray structure 24, for example：Local complexity, uniform thickness covering, variable thickness covering, top are covered
Lid and lateral covering etc..In one example, ray structure 24 is grown on growth substrate and capped fluorophor 26.Another
In example, ray structure 24 covers fluorophor 26 again after separating and be fixed on carrier 22 with growth substrate.Patents can join
Examine People's Republic of China's Patent Prospectus the CN1747190Ath or U.S. patent application case of applicant in this case
11/160th, No. 588, its content is simultaneously considered as the part of this case.In another example, ray structure 24 is light-emitting diodes tube core
Piece or encapsulation, carrier 22 are circuit board.Additionally, ray structure 24 can also flip chip bonding (Flip Chip) mode be placed in load
Fluorophor 26 is covered after on body 22 again, now, fluorophor 26 is preferred to be covered in transparent substrates or transmissive optical element especially.It is luminous
Structure 24 is preferred with sending the wavelength of 400nm~500nm.The exciting light of ray structure 24 is mixed with the launching light of fluorophor 26
Into coloured light including but not limited to white light and other visual coloured light.
As shown in figure 4, according to another embodiment of the present invention, Wavelength conversion system 30 includes the first light source 32A, secondary light source
32B and wavelength conversion body 34.First light source 32A and secondary light source 32B can launch light, and the wavelength of these light, frequency spectrum,
Or intensity has perceptible difference, in common example, this perceptible difference is as upper and lower wavelength difference such as 1nm~20nm
XOR spectrum shift.Wavelength conversion system 34 comprises at least a kind of material, and its composition can be the first light source 32A and secondary light source
32B is excited and radius, and launching light produced by this kind of material reflects the wavelength shift of exciting light in certain frequency range
Trend, or positive correlation (Positive Correlation) is presented between the wavelength of exciting light.
Light 31B excitation wavelengths conversion body 34 in first light source 32A produces launching light 31C, comes from the first light source 32A
Unconverted light 31A and light 31B to blend together be mixed light 35A.Light 33B excitation wavelengths conversion in secondary light source 32B
Body 34 produces launching light 33C, and coming from the unconverted light 33A and light 33C of secondary light source 32B, to blend together be mixed light 35B.
Mixed light 35A and 35B has close colour temperature, for example：Color temperature difference between mixed light 35A and 35B is difficult less than 100K or user
The numerical value discovered or with close chromaticity coordinate.Using the wavelength conversion body 34 of the present embodiment, even if having discernable wavelength
The light source of difference, for example：Light source 32A and 32B, are present in system 30, and system 30 can still produce uniform or similar coloured light,
For example：Mixed light 35A and 35B.
In the present embodiment, wavelength conversion body 34 can be contacted directly with light source 32A with 32B, for example：It is luminous comprising multiple
The packaging body of diode chip for backlight unit, the material for being used to encapsulate this packaging body includes fluorescence mixture, and this mixture is in special frequency channel
Its excitation wavelength is presented positive correlation with launch wavelength.Wavelength conversion body 34 can also be separated with light source 32A and 32B, for example：According to
Bright device, includes multiple light sources and transmissive optical element, transmissive optical element such as lampshade, fluorescent tube, lens, outer cover, paster, tabular
The coverings such as thing, diaphragm, wavelength conversion body 34 is coated, fits or be mixed into this transmissive optical element, is located at the light of light source
With the original wavelength of converted light source on footpath.Additionally, wavelength conversion body 34 can also be selectively formed at the reflection of lighting device
On inwall, will be reflected by inwall after the light for coming from light source is changed through wavelength conversion body 34, or it is reflected through wavelength
Conversion body 34.
The result tested according to one embodiment of the invention is as shown in table 1.The nitride series of two 15mil it is luminous
Diode chip for backlight unit operated under controllable current and it is adjacent be placed in one there is the encapsulating structure of silver-colored reflector, wherein one
The dominant wavelength of individual chip is 450nm, and the dominant wavelength of another chip is 470nm.Silicate-based phosphors and YAG fluorophor are with about
1.08 weight ratio (0.26g/0.24g) is mixed into epoxy resin (Epoxy) and is covered on this two light-emitting diode chip for backlight unit.
The electric current for being input into two light-emitting diode chip for backlight unit is controlled in inverse change between 0mA~20mA respectively, that is, an input electricity for chip
Stream rises, and the input current of another chip is to decline.By adjusting by the electric current of chip, the mixed of this two chip is originated from change
The spectrum of wavelengths of closing light.The design of this experiment can also be considered as simulation distribution in the blue light of 450nm~470nm wavelength.It is real one
Test in example, input current value is controlled to 0mA, 5mA, 10mA, 15mA and 20mA.Even if it can be found that the electric current of two chips of input
Value changes, relative colour temperature (the Correlated Color Temperature of final mixing light；CCT) can still maintain
Between 5945K~6035K, difference is less than 100K therebetween.In other words, mix using according to the fluorescence in embodiments of the invention
Body has preferably degrees of tolerance so that be as the wavelength convert medium of system for the difference of intensity between light source and wavelength
System can show metastable quality of lighting.
Table 1
By the way that according to the wavelength conversion body in one embodiment of the invention, user can have an opportunity freely to use single wafer
Any chip of upper production.In other words, even if there is the difference of launch wavelength between light-emitting diode chip for backlight unit in a wafer each other
It is different, if can normal operation, the chip may have an opportunity to be not required to by being used in downstream product by classification and screening.Very
Person, by according to the wavelength conversion body in one embodiment of the invention, even if the light source in being configured at Wavelength conversion system has
Scattered launch wavelength distribution, the colour temperature that the different light source of the characteristics of luminescence also only provides system light causes slight shadow
Ring.
In addition to the YAG that the embodiment of the present invention is used with silicates series luminescent material, it is glimmering that other can be inspired yellow
The material of light is including but not limited to terbium aluminium garnet type fluorescent material (Terbium Aluminum Garnet；TAG), its composition example
Such as Tb3Al5O12:Ce, with nitric oxide fluorescent powder (oxynitride), its composition such as (SrBa) Si2N2O2:Eu。
Although the present invention is it is stated that as above, scope, implementation order or the material for using that so it is not intended to limiting the invention
Material and process.For various modifications and change that the present invention is made, spirit and scope of the invention are neither taken off.
Claims (6)
1. a kind of Wavelength conversion system is included：
One wavelength conversion body includes a first area and a second area；
One first light source sends one first light, and first light passes through the first area to produce one first mixed light；
One secondary light source sends one second light, and second light passes through the second area to produce one second mixed light；
And
One carrier supported, first light source and the secondary light source；
Wherein, the wavelength difference of first light and second light is more than 1nm and below 20nm；And
Wherein, the color temperature difference of first mixed light and second mixed light is less than 100K.
2. a kind of Wavelength conversion system, comprising：
One wavelength conversion body includes a first area and a second area；
One first light source sends one first light, and first light passes through the first area to produce one first launching light；And
One secondary light source sends one second light, and second light passes through the second area to produce one second launching light；
Wherein, first launching light has a main emission wavelength lambda1, 480nm≤λ1≤ 700nm and second launching light have a master
Emission wavelength lambda1, 470nm≤λ1≦650nm；And
Wherein, the wavelength difference of first light and second light is more than 1nm and below 20nm.
3. a kind of Wavelength conversion system is included：
First light source, is driven in the first electric current is lower；
Secondary light source, is driven in the second electric current is lower；
One wavelength conversion body is located on first light source and the secondary light source, and the wavelength conversion body is in can under one first operating condition
Excited by first light source and the secondary light source with produce one first mixed light and under one second state by first light
Source and the secondary light source excite to produce one second mixed light；
Wherein, when first operating condition is converted into second operating condition, first electric current is presented with the second electric current system
Inverse change；And
Wherein, the color temperature difference of first mixed light and second mixed light is less than 100K.
4. the Wavelength conversion system as described in any in claim 1-3, wherein, the wavelength conversion body and first light source and should
Secondary light source is separated.
5. the Wavelength conversion system as described in any in claim 1-3, wherein, first light source and the secondary light source are upside-down mounting
Welding structure.
6. the Wavelength conversion system as described in any in claim 1-3, wherein, the wavelength conversion body includes two kinds of fluorescent material.
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| CN201410347474.3A CN104183688B (en) | 2007-07-26 | 2007-07-26 | Wavelength conversion system |
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| CN201410347474.3A CN104183688B (en) | 2007-07-26 | 2007-07-26 | Wavelength conversion system |
| CN200710138138.8A CN101353572B (en) | 2007-07-26 | 2007-07-26 | Wavelength conversion system |
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| WO2020210740A1 (en) * | 2019-04-11 | 2020-10-15 | PixelDisplay Inc. | Method and apparatus of a multi-modal illumination and display for improved color rendering, power efficiency, health and eye-safety |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1432198A (en) * | 2000-05-29 | 2003-07-23 | 电灯专利信托有限公司 | LED-based white-light emitting lighting unit |
| CN1981388A (en) * | 2004-05-06 | 2007-06-13 | 首尔Opto仪器股份有限公司 | Light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1432198A (en) * | 2000-05-29 | 2003-07-23 | 电灯专利信托有限公司 | LED-based white-light emitting lighting unit |
| CN1981388A (en) * | 2004-05-06 | 2007-06-13 | 首尔Opto仪器股份有限公司 | Light emitting device |
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