CN112119476A - 电容器及其制作方法 - Google Patents
电容器及其制作方法 Download PDFInfo
- Publication number
- CN112119476A CN112119476A CN201980000563.1A CN201980000563A CN112119476A CN 112119476 A CN112119476 A CN 112119476A CN 201980000563 A CN201980000563 A CN 201980000563A CN 112119476 A CN112119476 A CN 112119476A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 181
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims description 197
- 239000000758 substrate Substances 0.000 claims description 111
- 238000000034 method Methods 0.000 claims description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 238000011049 filling Methods 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 230000000295 complement effect Effects 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 claims description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 485
- 229920002120 photoresistant polymer Polymers 0.000 description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 22
- 239000005388 borosilicate glass Substances 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000005380 borophosphosilicate glass Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000005360 phosphosilicate glass Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 229920000620 organic polymer Polymers 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- -1 USG Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910009442 Y2O Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
- H01G4/385—Single unit multiple capacitors, e.g. dual capacitor in one coil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
本申请提供一种电容器及其制作方法，能够制备小体积、高容值密度的电容器。该电容器包括：至少一个多翼结构；叠层结构，该叠层结构包覆该至少一个多翼结构，该叠层结构包括至少一层电介质层和多层导电层，该至少一层电介质层和该多层导电层形成导电层与电介质层彼此相邻的结构；至少一个第一外接电极，该第一外接电极电连接至该多层导电层中的一部分导电层；至少一个第二外接电极，该第二外接电极电连接至该多层导电层中的另一部分导电层，该一部分导电层中的每个导电层在该叠层结构中相邻的导电层包括有该另一部分导电层中的至少一个导电层。
Description
PCT国内申请，说明书已公开。
Claims (40)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/083533 WO2020211093A1 (zh) | 2019-04-19 | 2019-04-19 | 电容器及其制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112119476A true CN112119476A (zh) | 2020-12-22 |
| CN112119476B CN112119476B (zh) | 2022-04-19 |
Family
ID=72837023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980000563.1A Active CN112119476B (zh) | 2019-04-19 | 2019-04-19 | 电容器及其制作方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11469168B2 (zh) |
| EP (1) | EP3780044B1 (zh) |
| CN (1) | CN112119476B (zh) |
| WO (1) | WO2020211093A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11869929B2 (en) * | 2020-06-16 | 2024-01-09 | Changxin Memory Technologies, Inc. | Laminated capacitor and method for manufacturing the same |
| US11887976B2 (en) * | 2020-10-26 | 2024-01-30 | Mediatek Inc. | Land-side silicon capacitor design and semiconductor package using the same |
| US11735624B2 (en) * | 2021-03-05 | 2023-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-lateral recessed MIM structure |
| US20230178587A1 (en) * | 2021-12-05 | 2023-06-08 | International Business Machines Corporation | High-density metal-insulator-metal capacitor integration wth nanosheet stack technology |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0766313A1 (de) * | 1995-09-29 | 1997-04-02 | Siemens Aktiengesellschaft | Stapelkondensator für DRAM-Bauteile |
| US5903024A (en) * | 1997-05-06 | 1999-05-11 | United Microelectronics Corp. | Stacked and trench type DRAM capacitor |
| CN102683318A (zh) * | 2012-05-25 | 2012-09-19 | 无锡纳能科技有限公司 | 硅电容器内部多层电极连接结构及连接方法 |
| CN104520992A (zh) * | 2012-08-15 | 2015-04-15 | 桑迪士克科技股份有限公司 | 制造具有蚀刻停止的三维存储器阵列的方法 |
| CN208738233U (zh) * | 2018-09-26 | 2019-04-12 | 长鑫存储技术有限公司 | 电容器及半导体器件 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6737699B2 (en) * | 2002-06-27 | 2004-05-18 | Intel Corporation | Enhanced on-chip decoupling capacitors and method of making same |
| KR20100089522A (ko) * | 2009-02-04 | 2010-08-12 | 삼성전자주식회사 | 커패시터 및 그 제조 방법. |
| US9111689B2 (en) | 2009-07-02 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical interdigitated semiconductor capacitor |
| KR20120055363A (ko) * | 2010-11-23 | 2012-05-31 | 삼성전자주식회사 | 커패시터 및 이를 포함하는 반도체 소자 |
| CN102820279B (zh) * | 2011-06-10 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 垂直相互交叉的半导体电容器 |
| CN102543430A (zh) * | 2012-01-12 | 2012-07-04 | 西安交通大学 | 焦绿石薄膜多层陶瓷电容器及其低温制备方法 |
| US9450041B2 (en) * | 2012-11-28 | 2016-09-20 | Marvell World Trade Ltd. | Stackable high-density metal-oxide-metal capacitor with minimum top plate parasitic capacitance |
| US9553096B2 (en) * | 2013-11-22 | 2017-01-24 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement with capacitor |
| US9349880B2 (en) * | 2014-06-17 | 2016-05-24 | Globalfoundries Inc. | Semiconductor devices with semiconductor bodies having interleaved horizontal portions and method of forming the devices |
| CN106876152B (zh) * | 2015-12-11 | 2019-04-09 | 中芯国际集成电路制造(上海)有限公司 | 一种超级电容电池及其制造方法 |
| US10424585B2 (en) * | 2016-01-21 | 2019-09-24 | International Business Machines Corporation | Decoupling capacitor on strain relaxation buffer layer |
-
2019
- 2019-04-19 CN CN201980000563.1A patent/CN112119476B/zh active Active
- 2019-04-19 WO PCT/CN2019/083533 patent/WO2020211093A1/zh unknown
- 2019-04-19 EP EP19924710.7A patent/EP3780044B1/en active Active
-
2020
- 2020-09-26 US US17/033,758 patent/US11469168B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0766313A1 (de) * | 1995-09-29 | 1997-04-02 | Siemens Aktiengesellschaft | Stapelkondensator für DRAM-Bauteile |
| US5903024A (en) * | 1997-05-06 | 1999-05-11 | United Microelectronics Corp. | Stacked and trench type DRAM capacitor |
| CN102683318A (zh) * | 2012-05-25 | 2012-09-19 | 无锡纳能科技有限公司 | 硅电容器内部多层电极连接结构及连接方法 |
| CN104520992A (zh) * | 2012-08-15 | 2015-04-15 | 桑迪士克科技股份有限公司 | 制造具有蚀刻停止的三维存储器阵列的方法 |
| CN208738233U (zh) * | 2018-09-26 | 2019-04-12 | 长鑫存储技术有限公司 | 电容器及半导体器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20210013143A1 (en) | 2021-01-14 |
| EP3780044A1 (en) | 2021-02-17 |
| EP3780044A4 (en) | 2021-06-02 |
| WO2020211093A1 (zh) | 2020-10-22 |
| EP3780044B1 (en) | 2022-06-01 |
| CN112119476B (zh) | 2022-04-19 |
| US11469168B2 (en) | 2022-10-11 |
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