CN112086546A - 一种led产品封装结构及封装方法 - Google Patents
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Abstract
本发明涉及一种LED产品封装结构及封装方法。LED产品封装结构包括多个LED芯片、与多个LED芯片紧密结合为一体的封装树脂、芯片电极层及外围电路层,芯片电极层与外围电路层电连接并为一体成型结构。本发明通过在多个LED芯片之间填充封装树脂形成LED芯片与封装树脂的封装体,再采用增材制造方式,在多个LED芯片电极面形成金属种子层,然后通过图形电镀的方式将金属种子层增厚形成芯片电极与外围电路的连接。本发明的LED产品封装结构产品制造效率可大幅提高,在降低成本方面具有巨大的优势,可更好的匹配小尺寸芯片,同时芯片电极层与外围电路采用同质导电材料、一次性同步制作完成,可大大提高生产效率,降低生产成本。
Description
技术领域
本发明涉及LED封装技术领域,特别是一种LED产品封装结构及封装方法。
背景技术
目前,现有技术中LED产品封装结构主要有以下类型:
1、引脚式(Lamp)LED封装
引脚式封装就是常用的(Lamp)封装结构。一般用于电流较小(20-30mA),功率较低(小于0.1W)的LED封装。主要用于仪表显示或指示,大规模集成时也可作为显示屏。其缺点在于封装热阻较大(一般高于100K/W),寿命较短。
2、表面组装(贴片)式(SMT-LED)封装
表面组装技术(SMT)是一种可以直接将封装好的器件贴、焊到PCB表面指定位置上的一种封装技术。具体而言,就是用特定的工具或设备将芯片引脚对准预先涂覆了粘接剂和焊膏的焊盘图形上,然后直接贴装到未钻安装孔的PCB表面上,经过波峰焊或再流焊后,使器件和电路之间建立可靠的机械和电气连接。SMT技术具有可靠性高、高频特性好、易于实现自动化等优点,是电子行业最流行的一种封装技术和工艺。
3、板上芯片直装式(COB)LED封装
COB是Chip On Board(板上芯片直装)的英文缩写,是一种通过粘胶剂或焊料将LED芯片直接粘贴到PCB板上,再通过引线键合实现芯片与PCB板间电互连的封装技术。PCB板可以是低成本的FR-4材料(玻璃纤维增强的环氧树脂),也可以是高热导的金属基或陶瓷基复合材料(如铝基板或覆铜陶瓷基板等)。而引线键合可采用高温下的热超声键合(金丝球焊)和常温下的超声波键合(铝劈刀焊接)。COB技术主要用于大功率多芯片阵列的LED封装,同SMT相比,不仅大大提高了封装功率密度,而且降低了封装热阻(一般为6-12W/m.K)。
4、系统封装式(SiP)LED封装
SiP(System in Package)是近几年来为适应整机的便携式发展和系统小型化的要求,在系统芯片System on Chip(SOC)基础上发展起来的一种新型封装集成方式。对SiP-LED而言,不仅可以在一个封装内组装多个发光芯片,还可以将各种不同类型的器件(如电源、控制电路、光学微结构、传感器等)集成在一起,构建成一个更为复杂的、完整的系统。同其他封装结构相比,SiP具有工艺兼容性好(可利用已有的电子封装材料和工艺),集成度高,成本低,可提供更多新功能,易于分块测试,开发周期短等优点。按照技术类型不同,SiP可分为四种:芯片层叠型、模组型、MCM型和三维(3D)封装型。
引脚式(Lamp)LED封装、表面组装(贴片)式(SMT-LED)封装均采用固晶、焊线、封胶工艺,需要使用固晶机、焊线机设备,除芯片外需要使用封装支架、焊接线等原料,可以加工的芯片尺寸受到一定限制,无法加工长宽尺寸小于100微米的LED芯片。板上芯片直装式(COB)LED封装省略了焊线设备和焊接线原料,但需要用到回流焊和锡膏,将芯片通过SMT印刷到线路板上然后回流焊接。由于芯片P、N电极之间需要一定的绝缘宽度,100微米长宽以下芯片尺寸难度非常大。同时引脚式封装和COB封装对于100微米以下或更小尺寸芯片封装的成本继续降低空间有限。另外,上述几种LED产品封装结构均存在芯片电极与外围电路连接工艺复杂的问题,生产效率低,生产成本高。
发明内容
本发明的主要目的是克服现有技术的缺点,提供一种可大大提高生产效率,降低生产成本的LED产品封装结构及封装方法。
本发明采用如下技术方案:
一种LED产品封装结构,包括多个LED芯片、与多个LED芯片紧密结合为一体的封装树脂、芯片电极层及外围电路层,所述封装树脂不覆盖LED芯片电极面,芯片电极层与外围电路层电连接并为一体成型结构。
进一步地,所述芯片电极层包括P电极层和N电极层,所述外围电路层包括P电极电路和N电极电路,P电极层与对应的P电极电路电连接并一体成型,N电极层与对应的N电极电路电连接并一体成型,P电极电路与N电极电路之间绝缘设置。
进一步地,所述外围电路层悬空或直接分布于封装树脂上。
一种LED产品封装方法,依次包括以下步骤:
①将多个LED芯片间隔分布贴附于表面膜上,LED芯片的电极面与表面膜紧密结合;
②在多个LED芯片之间填充封装树脂,封装树脂固化后与多个LED芯片紧密结合为一体;
③剥离表面膜,形成LED芯片与封装树脂的封装体;
④采用增材制造方式在多个LED芯片的电极面形成金属种子层;
⑤通过图形电镀的方式将金属种子层需要保留的芯片电极区域和外围电路区域进行金属电镀增厚形成芯片电极层与外围电路层,同时实现芯片电极层与外围电路层的电连接;
⑥通过快速金属化学腐蚀将未经电镀增厚区域的金属种子层腐蚀掉,即完成LED产品封装。
进一步地,在步骤④得到的产品的金属种子层表面涂覆感光材料层,并经曝光、显影工艺,将需要保留的芯片电极区域和外围电路区域裸露出来,然后再进行步骤⑤工艺,并在步骤⑤工艺完成后,去除感光材料层。
进一步地,所述表面膜采用胶带。
进一步地,所述封装树脂采用环氧树脂、硅胶、PI、PE或PT树脂中的一种或多种。
进一步地,所述步骤②中,封装树脂在60-160度温度下固化。
进一步地,所述步骤④中金属种子层采用化学金属沉积、金属蒸发或金属溅射方法形成,金属种子层厚度为1-3微米;步骤⑤中金属电镀增厚厚度为1-500微米。
进一步地,对于P电极、N电极位于同侧的LED芯片,在P电极电路与N电极电路交叉处设置绝缘隔层。
由上述对本发明的描述可知,与现有技术相比,本发明的有益效果是:
本发明的LED产品封装结构与现有的引脚式封装、表面组装COB封装相比,不需要PCB板;在生产工艺、使用设备上与现有封装产品具有较大区别,不需要焊线机、不需要回流焊、不需要SMT印刷机,并且由于是多芯片巨量封装,产品制造效率可大幅提高,在降低成本方面具有巨大的优势;另外,本发明的LED产品封装方法可更好的匹配小尺寸芯片,对于长宽尺寸大于3微米以上的芯片均能适用;同时,本发明的芯片电极层与外围电路采用同质导电材料、一次性同步制作完成,可大大提高生产效率,降低生产成本。
附图说明
图1是本发明实施例1的LED产品封装结构的侧向剖视图;
图2是本发明实施例1的LED产品封装结构的俯视图;
图3是本发明实施例2的LED产品封装结构的俯视图。
图中:1.LED芯片,2.封装树脂,3.P电极层,4.N电极层,5.P电极电路,6.N电极电路。
具体实施方式
以下通过具体实施方式对本发明作进一步的描述。
实施例1
参照图1和图2,本发明的一种LED产品封装结构,包括多个LED芯片1、与多个LED芯片1紧密结合为一体的封装树脂2、芯片电极层及外围电路层,封装树脂2不覆盖LED芯片1电极面,芯片电极层与外围电路层电连接并为一体成型结构。LED芯片1为P电极、N电极位于芯片正反两面的垂直结构芯片。芯片电极层包括P电极层3和N电极层4,外围电路层包括P电极电路5和N电极电路6,P电极层3与对应的P电极电路5电连接并一体成型,N电极层4与对应的N电极电路6电连接并一体成型,P电极电路5与N电极电路6之间形成一定缝隙实现绝缘。外围电路层直接分布于封装树脂2上。
一种LED产品封装方法,依次包括以下步骤:
①将多个LED芯片1间隔分布贴附于胶带上,LED芯片1的电极面与胶带紧密结合;
②在多个LED芯片1之间填充封装树脂2,封装树脂2在60-160度温度下固化后与多个LED芯片1紧密结合为一体;封装树脂2采用环氧树脂;
③剥离胶带,形成LED芯片1与封装树脂2的封装体;
④采用增材制造方式,采用化学金属沉积方法在多个LED芯片1的电极面形成金属种子层,金属种子层厚度为1-3微米;
⑤在步骤④得到的产品的金属种子层表面涂覆感光胶,并经曝光、显影工艺,将需要保留的芯片电极区域和外围电路区域裸露出来,即LED芯片的P电极区域、N电极区域以及设计的P电极电路区域、N电极电路区域;然后再通过图形电镀的方式将金属种子层需要保留的芯片电极区域和外围电路区域进行金属电镀增厚形成P电极层、N电极层以及P电极电路区域、N电极电路,同时实现了芯片电极与外围电路的电连接;金属电镀增厚厚度为1-500微米。
⑥通过去胶剂去除感光胶;
⑦通过快速金属化学腐蚀工艺将未经电镀增厚区域的金属种子层腐蚀掉,快速金属化学腐蚀工艺,可根据电镀金属的种类分别选择不同的腐蚀溶液NaoH或三氯化铁等,将步骤⑥得到的电镀完成的封装体浸入腐蚀溶液中,观察腐蚀情况,将未经电镀增厚的种子金属层腐蚀掉后立即取出,用清水洗涤去除腐蚀溶液,即完成LED产品封装。
金属种子层及金属电镀的金属采用铜或铝。芯片电极层与外围电路采用同质导电材料、一次性同步制作完成。感光胶、去胶剂及曝光、显影工艺均采用本领域现有技术中任意可实现对应效果的实施方案。
本发明的LED产品封装结构与现有的引脚式封装、表面组装COB封装不同之处在于,不需要PCB板,产品由封装树脂、LED芯片、外围电路组成。在生产工艺、使用设备上与现有封装产品也有非常大的不同,本发明产品不需要焊线机、不需要回流焊、不需要SMT印刷机,由于是多芯片巨量封装,本发明产品在制造效率上大幅提高。以上不同之处决定了本发明产品在成本方面具有巨大的优势,可大幅度降低LED产品封装成本。另外,本发明产品在加工制作过程中更加匹配小尺寸芯片,对于长宽尺寸大于3微米以上的芯片均能适用。
实施例2
参照图3,本实施例与实施例1的区别在于:本实施例中,LED芯片为P电极、N电极位于同侧的正装结构芯片。
本实施例的LED产品封装方法,依次包括以下步骤:
①将多个LED芯片1间隔分布贴附于胶带上,LED芯片1的电极面与胶带紧密结合;
②在多个LED芯片1之间填充封装树脂2,封装树脂2在60-160度温度下固化后与多个LED芯片1紧密结合为一体;封装树脂2采用PT树脂;
③剥离胶带,形成LED芯片1与封装树脂2的封装体;
④采用增材制造方式,采用金属蒸发方法在多个LED芯片1的电极面形成金属种子层,金属种子层厚度为1-3微米;
⑤在步骤④得到的产品的金属种子层表面涂覆感光胶,并经曝光、显影工艺,先将P电极区域和设计的P电极电路区域裸露出来,然后再通过图形电镀的方式将保留的P电极区域和P电极电路区域进行金属电镀增厚形成P电极层与P电极电路层,同时实现P电极层与P电极电路层的电连接;金属电镀增厚厚度为1-500微米;再在设计的N电极电路与P电极电路的交叉处设置绝缘层,最后按同样的方法电镀增厚形成N电极层与N电极电路层,同时实现N电极层与N电极电路层的电连接;
⑥通过去胶剂去除感光胶;
⑦通过快速金属化学腐蚀工艺将未经电镀增厚区域的金属种子层腐蚀掉,快速金属化学腐蚀工艺,可根据电镀金属的种类分别选择不同的腐蚀溶液NaoH或三氯化铁等,将步骤⑥得到的电镀完成的封装体浸入腐蚀溶液中,观察腐蚀情况,将未经电镀增厚的种子金属层腐蚀掉后立即取出,用清水洗涤去除腐蚀溶液,即完成LED产品封装。
实施例3
本实施例与实施例1的区别在于:封装树脂2采用硅胶和PE混合的树脂;采用金属溅射方法在多个LED芯片1的电极面形成金属种子层。
上述仅为本发明的三个具体实施方式,但本发明的设计构思并不局限于此,凡利用此构思对本发明进行非实质性的改动,均应属于侵犯本发明保护范围的行为。
Claims (10)
1.一种LED产品封装结构,其特征在于:包括多个LED芯片、与多个LED芯片紧密结合为一体的封装树脂、芯片电极层及外围电路层,所述封装树脂不覆盖LED芯片电极面,芯片电极层与外围电路层电连接并为一体成型结构。
2.如权利要求1所述的一种LED产品封装结构,其特征在于:所述芯片电极层包括P电极层和N电极层,所述外围电路层包括P电极电路和N电极电路,P电极层与对应的P电极电路电连接并一体成型,N电极层与对应的N电极电路电连接并一体成型,P电极电路与N电极电路之间绝缘设置。
3.如权利要求1或2所述的一种LED产品封装结构,其特征在于:所述外围电路层悬空或直接分布于封装树脂上。
4.一种LED产品封装方法,其特征在于:依次包括以下步骤:
①将多个LED芯片间隔分布贴附于表面膜上,LED芯片的电极面与表面膜紧密结合;
②在多个LED芯片之间填充封装树脂,封装树脂固化后与多个LED芯片紧密结合为一体;
③剥离表面膜,形成LED芯片与封装树脂的封装体;
④采用增材制造方式在多个LED芯片的电极面形成金属种子层;
⑤通过图形电镀的方式将金属种子层需要保留的芯片电极区域和外围电路区域进行金属电镀增厚形成芯片电极层与外围电路层,同时实现芯片电极层与外围电路层的电连接;
⑥通过快速金属化学腐蚀将未经电镀增厚区域的金属种子层腐蚀掉,即完成LED产品封装。
5.如权利要求4所述的一种LED产品封装方法,其特征在于:在步骤④得到的产品的金属种子层表面涂覆感光材料层,并经曝光、显影工艺,将需要保留的芯片电极区域和外围电路区域裸露出来,然后再进行步骤⑤工艺,并在步骤⑤工艺完成后,去除感光材料层。
6.如权利要求4所述的一种LED产品封装方法,其特征在于:所述表面膜采用胶带。
7.如权利要求4所述的一种LED产品封装方法,其特征在于:所述封装树脂采用环氧树脂、硅胶、PI、PE或PT树脂中的一种或多种。
8.如权利要求4所述的一种LED产品封装方法,其特征在于:所述步骤②中,封装树脂在60-160度温度下固化。
9.如权利要求4所述的一种LED产品封装方法,其特征在于:所述步骤④中金属种子层采用化学金属沉积、金属蒸发或金属溅射方法形成,金属种子层厚度为1-3微米;步骤⑤中金属电镀增厚厚度为1-500微米。
10.如权利要求4所述的一种LED产品封装方法,其特征在于:对于P电极、N电极位于同侧的LED芯片,在P电极电路与N电极电路交叉处设置绝缘隔层。
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