CN112072261A - 一种陶瓷介质滤波器制造工艺 - Google Patents

一种陶瓷介质滤波器制造工艺 Download PDF

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CN112072261A
CN112072261A CN202010785332.0A CN202010785332A CN112072261A CN 112072261 A CN112072261 A CN 112072261A CN 202010785332 A CN202010785332 A CN 202010785332A CN 112072261 A CN112072261 A CN 112072261A
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ceramic
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邓腾飞
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Anhui Lanxun New Material Technology Co ltd
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Abstract

本发明公开了一种陶瓷介质滤波器制造工艺，步骤一：称取原料：按照质量百分比分别为75wt％～90wt％和10wt％～25wt％称取对应重量的陶瓷粉料与陶瓷成型剂；步骤二：混料造粒：将陶瓷成型剂与陶瓷粉料使用混料机内混合20min～30min，将原料混合均匀后置于预热温度为145～160℃的密炼机中预热熔融，预热熔融后密炼机预热的温度为150～165℃，揉炼混合时的温度为170℃～200℃，在175℃～210℃的温度下揉炼25min～110min后造粒，得到陶瓷喂料；步骤三：注射成型：将上述陶瓷喂料装于注射成型机中，在注射温度为130℃～210℃，模具温度为35℃～140℃；本发明能够让生产出的陶瓷介质滤波器密度更加均匀，有效降低了残次品的出产率。

Description

一种陶瓷介质滤波器制造工艺
技术领域
本发明涉及介质滤波器领域，具体涉及一种陶瓷介质滤波器制造工艺。
背景技术
陶瓷介质滤波器利用介质陶瓷材料的低损耗、高介电常数、频率温度系数和热膨胀系数小、可承受高功率等特点设计制作的，由数个长型谐振器纵向多级串联或并联的梯形线路构成，陶瓷介质滤波器再生产过程中需要使用到陶瓷介质滤波器制造工艺。
现有的陶瓷介质滤波器制造工艺，在进行生产时，原料混合的不够充分，容易导致生产出的陶瓷介质滤波器密度不均匀，从而使得陶瓷介质滤波器的，坯体各部分介电常数不稳定，导致生产出的残次品变多，因此，提出一种陶瓷介质滤波器制造工艺。
发明内容
本发明所要解决的技术问题在于：如何解决现有的陶瓷介质滤波器制造工艺，在进行生产时，原料混合的不够充分，容易导致生产出的陶瓷介质滤波器密度不均匀，从而使得陶瓷介质滤波器的，坯体各部分介电常数不稳定，导致生产出的残次品变多的问题，因此提供了一种陶瓷介质滤波器制造工艺。
本发明是通过以下技术方案解决上述技术问题的，本发明包括以下步骤：
步骤一：称取原料：按照质量百分比分别为75wt％～90wt％和10wt％～25wt％称取对应重量的陶瓷粉料与陶瓷成型剂；
步骤二：混料造粒：将陶瓷成型剂与陶瓷粉料使用混料机内混合20min～30min，将原料混合均匀后置于预热温度为145～160℃的密炼机中预热熔融，预热熔融后密炼机预热的温度为150～165℃，揉炼混合时的温度为170℃～200℃，在175℃～210℃的温度下揉炼25min～110min后造粒，得到陶瓷喂料；
步骤三：注射成型：将上述陶瓷喂料装于注射成型机中，在注射温度为130℃～210℃，模具温度为35℃～140℃，保压速度为25mm/s～45mm/s的环境下，注射成型得到陶瓷介质坯体；
步骤四：脱脂：采用有机酸催化脱脂脱除上述陶瓷介质坯体中有机物；
步骤五：烧结成型：将经过脱脂后的陶瓷介质坯体置于烧结炉中，采用分段升温的烧结方式进行烧结，烧结完成后得到成型的陶瓷介质；
步骤六：金属化处理：将上述陶瓷介质金属化，即获得陶瓷介质滤波。
所述陶瓷粉料为钛酸钙镁系、铝酸钐钙系、钛酸钡系中的一种，所述陶瓷粉料的粒径不超过1.4μm，含水率不超过0.3％。
优选的，所述陶瓷成型剂按照质量百分比计算包括：粘结剂55wt％～85wt％；增塑剂5wt％～15wt％；表面活性剂4wt％～10wt％，所述粘结剂为石蜡、聚乙烯、低密度聚乙烯、乙烯-乙酸乙烯共聚物、聚甲基丙烯酸酯、聚醛基中的一种或多种混合；所述为增塑剂邻苯二甲酸二乙酯、邻苯二甲酸二丁酯、邻苯二甲酸二辛酯、邻苯二甲酸二正丁酯中的多种混合；所述表面活性剂为油酸、硬脂酸、微晶石蜡、白油、硅油中的多种混合。
优选的，所述步骤四中的脱脂温度为110℃～150℃，反应时间为10h～30h，进酸量为1.5～4.5g/min。
优选的，所述步骤三中的注塑机注射压力为50MPa～155MPa，注射速度为25mm/s～90mm/s。
优选的，所述步骤五中分段升温的烧结方式的流程如下：第一个阶段经过1100min～1400min从室温升温至610℃～700℃，升温速率为0.4℃～0.8℃/min，并在610℃～700℃保留210～260min；第二阶段从610～700℃升温至1450℃～1550℃，升温速率为4℃～8℃/min的速率升温，第三阶段在1450℃～1550℃保温4～8小时后自然降温。
优选的，所述步骤二中的混料机包括混料箱、设置混料箱顶端的封盖与设置混料箱内部的混料轴，所述封盖的顶端设置有制动电机。
优选的，所述混料轴的外部固定安装有上料螺旋，所述混料轴靠近顶端的位置固定安装有安装座，所述安装座的外部固定安装有混料叶片。
优选的，所述封盖的内部端设置有传动座，所述传动座与制动电机的制动轴固定连接，所述混料轴的顶端插接在传动座的内部，所述传动座的一侧外表面开设有连接孔，所述连接孔的内部螺纹连接有固定销。
本发明相比现有技术具有以下优点：该陶瓷介质滤波器制造工艺，通过将陶瓷成型剂与陶瓷粉料进行更加充分的混合，可以有效的让陶瓷介质滤波器的密度更加的均匀，有效减少了陶瓷介质滤波器单点密度过小导致的陶瓷滤波器损坏无法使用的状况发生，降低了残次品的产出率，让该方法更加值得推广使用。
附图说明
图1是本发明的混料机整体结构图；
图2是本发明的混料机内部结构图。
图中：1、混料箱；2、顶盖；3、混料轴；31、上料螺旋；32、固定座；33、混合叶片；4、制动电机；5、传动座；51、连接孔；52、连接销。
具体实施方式
下面对本发明的实施例作详细说明，本实施例在以本发明技术方案为前提下进行实施，给出了详细的实施方式和具体的操作过程，但本发明的保护范围不限于下述的实施例。
本实施例提供一种技术方案：一种陶瓷介质滤波器制造工艺，包括以下步骤：
步骤一：称取原料：按照质量百分比分别为75wt％～90wt％和10wt％～25wt％称取对应重量的陶瓷粉料与陶瓷成型剂；
步骤二：混料造粒：将陶瓷成型剂与陶瓷粉料使用混料机内混合20min～30min，将原料混合均匀后置于预热温度为145～160℃的密炼机中预热熔融，预热熔融后密炼机预热的温度为150～165℃，揉炼混合时的温度为170℃～200℃，在175℃～210℃的温度下揉炼25min～110min后造粒，得到陶瓷喂料；
步骤三：注射成型：将上述陶瓷喂料装于注射成型机中，在注射温度为130℃～210℃，模具温度为35℃～140℃，保压速度为25mm/s～45mm/s的环境下，注射成型得到陶瓷介质坯体；
步骤四：脱脂：采用有机酸催化脱脂脱除上述陶瓷介质坯体中有机物；
步骤五：烧结成型：将经过脱脂后的陶瓷介质坯体置于烧结炉中，采用分段升温的烧结方式进行烧结，烧结完成后得到成型的陶瓷介质；
步骤六：金属化处理：将上述陶瓷介质金属化，即获得陶瓷介质滤波。
所述陶瓷粉料为钛酸钙镁系、铝酸钐钙系、钛酸钡系中的一种，所述陶瓷粉料的粒径不超过1.4μm，含水率不超过0.3％。
所述陶瓷成型剂按照质量百分比计算包括：粘结剂55wt％～85wt％；增塑剂5wt％～15wt％；表面活性剂4wt％～10wt％，所述粘结剂为石蜡、聚乙烯、低密度聚乙烯、乙烯-乙酸乙烯共聚物、聚甲基丙烯酸酯、聚醛基中的一种或多种混合；所述为增塑剂邻苯二甲酸二乙酯、邻苯二甲酸二丁酯、邻苯二甲酸二辛酯、邻苯二甲酸二正丁酯中的多种混合；所述表面活性剂为油酸、硬脂酸、微晶石蜡、白油、硅油中的多种混合。
所述步骤四中的脱脂温度为110℃～150℃，反应时间为10h～30h，进酸量为1.5～4.5g/min。
所述步骤三中的注塑机注射压力为50MPa～155MPa，注射速度为25mm/s～90mm/s。
所述步骤五中分段升温的烧结方式的流程如下：第一个阶段经过1100min～1400min从室温升温至610℃～700℃，升温速率为0.4℃～0.8℃/min，并在610℃～700℃保留210～260min；第二阶段从610～700℃升温至1450℃～1550℃，升温速率为4℃～8℃/min的速率升温，第三阶段在1450℃～1550℃保温4～8小时后自然降温。
如图1所示，步骤二中的混料机包括混料箱1、设置混料箱1顶端的封盖2与设置混料箱1内部的混料轴3，封盖2的顶端设置有制动电机4，将需要混合的陶瓷成型剂与陶瓷粉料倒入到混料箱1中，之后将封盖2关闭，制动电机4运作带动混料轴3高速旋转进行混料。
如图2所示，混料轴3的外部固定安装有上料螺旋31，混料轴3靠近顶端的位置固定安装有安装座32，安装座32的外部固定安装有混料叶片33，混料轴3带动上料螺旋31进行旋转，混料轴3通过上料螺旋31将陶瓷成型剂与陶瓷粉料上旋，使得陶瓷成型剂与陶瓷粉料最终被抛到混料箱1内，陶瓷成型剂与陶瓷粉料在下落过程中进行充分的混合，从而让使用混合好的原料生产出的陶瓷介质滤波器的密度更加的均匀，实现坯体各部分介电常数稳定一致。
封盖2的内部端设置有传动座5，传动座5与制动电机4的制动轴固定连接，混料轴3的顶端插接在传动座5的内部，传动座5的一侧外表面开设有连接孔51，连接孔51的内部螺纹连接有固定销52；
将固定销52插入到连接孔51内从而将混料轴3稳定的与传动座5连接起来，简单的连接方式也方便用户将混料轴3拆下进行清理；
以下我们通过具体优选的实施例对本发明进行进一步详细的解释和说明，但是本发明的保护范围不限于下述实施例的内容。
实施例1：步骤一：称取原料：按照质量百分比分别为80wt％和10wt％～20wt％称取对应重量的陶瓷粉料与陶瓷成型剂；
步骤二：混料造粒：将陶瓷成型剂与陶瓷粉料使用混料机内混合20min，将原料混合均匀后置于预热温度为145℃的密炼机中预热熔融，预热熔融后密炼机预热的温度为150℃，揉炼混合时的温度为170℃，在170℃的温度下揉炼25min后造粒，得到陶瓷喂料；
步骤三：注射成型：将上述陶瓷喂料装于注射成型机中，在注射温度为130℃，模具温度为35℃，保压速度为25mm/s的环境下，且注塑机注射压力为50MPa，注射速度为25mm/s，注射成型得到陶瓷介质坯体；
步骤四：脱脂：采用有机酸催化脱脂脱除上述陶瓷介质坯体中有机物，脱脂温度为110℃，反应时间为10h，进酸量为1.5/min；
步骤五：烧结成型：将经过脱脂后的陶瓷介质坯体置于烧结炉中，采用分段升温的烧结方式进行烧结，第一个阶段经过1100min从室温升温至610℃，升温速率为0.4℃/min，并在610℃保留210；第二阶段从610升温至1450℃，升温速率为4℃/min的速率升温，第三阶段在1450℃保温4小时后自然降温，烧结完成后得到成型的陶瓷介质；
步骤六：金属化处理：将上述陶瓷介质金属化，即获得陶瓷介质滤波。
实施例2：步骤一：称取原料：按照质量百分比分别为80wt％和20wt％称取对应重量的陶瓷粉料与陶瓷成型剂；
步骤二：混料造粒：将陶瓷成型剂与陶瓷粉料使用混料机内混合30min，将原料混合均匀后置于预热温度为155℃的密炼机中预热熔融，预热熔融后密炼机预热的温度为155℃，揉炼混合时的温度为185℃，在185℃的温度下揉炼90min后造粒，得到陶瓷喂料；
步骤三：注射成型：将上述陶瓷喂料装于注射成型机中，在注射温度为160℃，模具温度为85℃，保压速度为35mm/s的环境下，且注塑机注射压力为135MPa，注射速度为50mm/s，注射成型得到陶瓷介质坯体；
步骤四：脱脂：采用有机酸催化脱脂脱除上述陶瓷介质坯体中有机物，脱脂温度为130℃，反应时间为20h，进酸量为3g/min；
步骤五：烧结成型：将经过脱脂后的陶瓷介质坯体置于烧结炉中，采用分段升温的烧结方式进行烧结，第一个阶段经过1300min从室温升温至650℃，升温速率为0.6℃/min，并在680℃保留250min；第二阶段从680℃升温至1500℃，升温速率为6℃/min的速率升温，第三阶段在1500℃保温6小时后自然降温，烧结完成后得到成型的陶瓷介质；
步骤六：金属化处理：将上述陶瓷介质金属化，即获得陶瓷介质滤波。
实施例3：步骤一：称取原料：按照质量百分比分别为75wt％和25wt％称取对应重量的陶瓷粉料与陶瓷成型剂；
步骤二：混料造粒：将陶瓷成型剂与陶瓷粉料使用混料机内混合25min，将原料混合均匀后置于预热温度为160℃的密炼机中预热熔融，预热熔融后密炼机预热的温度为165℃，揉炼混合时的温度为210℃，在210℃的温度下揉炼110min后造粒，得到陶瓷喂料；
步骤三：注射成型：将上述陶瓷喂料装于注射成型机中，在注射温度为210℃，模具温度为140℃，保压速度为45mm/s的环境下，且注塑机注射压力为155MPa，注射速度为90mm/s，注射成型得到陶瓷介质坯体；
步骤四：脱脂：采用有机酸催化脱脂脱除上述陶瓷介质坯体中有机物，脱脂温度为150℃，反应时间为30h，进酸量为4.5g/min；
步骤五：烧结成型：将经过脱脂后的陶瓷介质坯体置于烧结炉中，采用分段升温的烧结方式进行烧结，第一个阶段经过1400min从室温升温至700℃，升温速率为0.8℃/min，并在700℃保留260min；第二阶段从700℃升温至1550℃，升温速率为8℃/min的速率升温，第三阶段在1550℃保温8小时后自然降温，烧结完成后得到成型的陶瓷介质；
步骤六：金属化处理：将上述陶瓷介质金属化，即获得陶瓷介质滤波。
对上述实施例1、实施例2及对比例3的混料，生坯、烧结体、微波陶瓷介质滤波器的性能进行对比，可以得出实施例2制备出的陶瓷介质滤波器具备更好的强度，密度均匀，坯体各部分介电常数稳定一致。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (9)

1.一种陶瓷介质滤波器制造工艺，其特征在于，包括以下步骤：
步骤一：称取原料：按照质量百分比分别为75wt％～90wt％和10wt％～25wt％称取对应重量的陶瓷粉料与陶瓷成型剂；
步骤二：混料造粒：将陶瓷成型剂与陶瓷粉料使用混料机内混合20min～30min，将原料混合均匀后置于预热温度为145～160℃的密炼机中预热熔融，预热熔融后密炼机预热的温度为150～165℃，揉炼混合时的温度为170℃～200℃，在175℃～210℃的温度下揉炼25min～110min后造粒，得到陶瓷喂料；
步骤三：注射成型：将上述陶瓷喂料装于注射成型机中，在注射温度为130℃～210℃，模具温度为35℃～140℃，保压速度为25mm/s～45mm/s的环境下，注射成型得到陶瓷介质坯体；
步骤四：脱脂：采用有机酸催化脱脂脱除上述陶瓷介质坯体中有机物；
步骤五：烧结成型：将经过脱脂后的陶瓷介质坯体置于烧结炉中，采用分段升温的烧结方式进行烧结，烧结完成后得到成型的陶瓷介质；
步骤六：金属化处理：将上述陶瓷介质金属化，即获得陶瓷介质滤波。
2.根据权利要求1所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述陶瓷粉料为钛酸钙镁系、铝酸钐钙系、钛酸钡系中的一种，所述陶瓷粉料的粒径不超过1.4μm，含水率不超过0.3％。
3.根据权利要求1所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述陶瓷成型剂按照质量百分比计算包括：粘结剂55wt％～85wt％；增塑剂5wt％～15wt％；表面活性剂4wt％～10wt％，所述粘结剂为石蜡、聚乙烯、低密度聚乙烯、乙烯-乙酸乙烯共聚物、聚甲基丙烯酸酯、聚醛基中的一种或多种混合；所述为增塑剂邻苯二甲酸二乙酯、邻苯二甲酸二丁酯、邻苯二甲酸二辛酯、邻苯二甲酸二正丁酯中的多种混合；所述表面活性剂为油酸、硬脂酸、微晶石蜡、白油、硅油中的多种混合。
4.根据权利要求1所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述步骤四中的脱脂温度为110℃～150℃，反应时间为10h～30h，进酸量为1.5～4.5g/min。
5.根据权利要求1所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述步骤三中的注塑机注射压力为50MPa～155MPa，注射速度为25mm/s～90mm/s。
6.根据权利要求1所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述步骤五中分段升温的烧结方式的流程如下：第一个阶段经过1100min～1400min从室温升温至610℃～700℃，升温速率为0.4℃～0.8℃/min，并在610℃～700℃保留210～260min；第二阶段从610～700℃升温至1450℃～1550℃，升温速率为4℃～8℃/min的速率升温，第三阶段在1450℃～1550℃保温4～8小时后自然降温。
7.根据权利要求1所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述步骤二中的混料机包括混料箱(1)、设置混料箱(1)顶端的封盖(2)与设置混料箱(1)内部的混料轴(3)，所述封盖(2)的顶端设置有制动电机(4)。
8.根据权利要求7所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述混料轴(3)的外部固定安装有上料螺旋(31)，所述混料轴(3)靠近顶端的位置固定安装有安装座(32)，所述安装座(32)的外部固定安装有混料叶片(33)。
9.根据权利要求7所述的一种陶瓷介质滤波器制造工艺，其特征在于：所述封盖(2)的内部端设置有传动座(5)，所述传动座(5)与制动电机(4)的制动轴固定连接，所述混料轴(3)的顶端插接在传动座(5)的内部，所述传动座(5)的一侧外表面开设有连接孔(51)，所述连接孔(51)的内部螺纹连接有固定销(52)。
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Application publication date: 20201211