CN112038426B - 一种晶格失配型三结砷化镓太阳电池及制作方法 - Google Patents

一种晶格失配型三结砷化镓太阳电池及制作方法 Download PDF

Info

Publication number
CN112038426B
CN112038426B CN202011226626.6A CN202011226626A CN112038426B CN 112038426 B CN112038426 B CN 112038426B CN 202011226626 A CN202011226626 A CN 202011226626A CN 112038426 B CN112038426 B CN 112038426B
Authority
CN
China
Prior art keywords
gaas
thickness
layer
buffer layer
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011226626.6A
Other languages
English (en)
Other versions
CN112038426A (zh
Inventor
徐培强
张银桥
王向武
潘彬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanchang Kaixun photoelectric Co.,Ltd.
Original Assignee
Nanchang Kaixun Photoelectric Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanchang Kaixun Photoelectric Co ltd filed Critical Nanchang Kaixun Photoelectric Co ltd
Priority to CN202011226626.6A priority Critical patent/CN112038426B/zh
Publication of CN112038426A publication Critical patent/CN112038426A/zh
Application granted granted Critical
Publication of CN112038426B publication Critical patent/CN112038426B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种晶格失配型三结砷化镓太阳电池及制作方法，自下向上依次为Ge衬底、底电池、GaAs/InGaAs缓冲层、中底隧穿结、GaAs缓冲层，In(Al)GaAs缓冲层，DBR，中电池、中顶隧穿结、顶电池和盖帽层；其中，In(Al)GaAs缓冲层由InAlAs成核层，InAlAs缓冲层，超晶格，低Al组分InAlGaAs，InGaAs组成；盖帽层由InGaAs和GaAs组成。通过引入InAlGaAs缓冲层，可以有效释放应力和过滤位错，在保证太阳电池材料晶体质量的情况下，使外延材料的晶格常数快速的达到目标值，降低产品生产周期，降低对中底隧穿结的损伤等，同时，通过盖帽层中GaAs的厚度，调节整个外延片的翘曲状况，获得平整的外延片。

Description

一种晶格失配型三结砷化镓太阳电池及制作方法
技术领域
本发明涉及太阳电池技术领域，尤其涉及一种晶格失配型三结砷化镓太阳电池及制作方法。
背景技术
自1957年10月4日起，世界上第一颗人造地球卫星“卫星1号”进入太空以来，在短短几十年里，航天技术取得了巨大的进步，对航天器电源系统的大功率、高可靠性、长寿命和微小型化也提出了新的要求。砷化镓太阳电池具有更高的光电转换效率、更好的耐高温性能、更强的空间抗辐射能力，成功取代Si太阳电池，成为我国航天飞行器，如人造卫星、宇宙飞船、空间实验室等高性能长寿命通用化空间主电源。在国内，经过几代航天人的不断努力，晶格匹配型GaInP/InGaAs/Ge三结太阳电池的转换效率已突破30%，接近半经验理论极限值，很难进一步提高。近年来，禁带匹配，晶格失配的三结太阳电池成为研究的热点，目前已经实现32%效率太阳电池的生产。目前，晶格失配结构太阳电池的结构，主要是通过阶变缓冲层的方式，将晶格常数过渡到目标值，该方法的缺点主要有以下几点：
（1）生产步骤多，生长时间长；
（2）生长过程中的烘烤，降低中底隧穿结性能；
（3）应力释放不完全，容易造成外延片翘曲；
（4）晶体质量不够好。
发明内容
本申请提供了一种晶格失配型三结砷化镓太阳电池及制作方法，通过引入InAlGaAs材料Al组分阶变缓冲层，可以有效释放应力和过滤位错，在保证太阳电池材料晶体质量的情况下，使外延材料的晶格常数快递的达到目标值，降低产品生产周期，降低对中底隧穿结的损伤等，同时，通过盖帽层中GaAs的厚度，调节整个外延片的翘曲状况，获得平整的外延片。
一种晶格失配型三结砷化镓太阳电池，自下向上依次为Ge衬底、底电池、GaAs/InGaAs缓冲层、中底隧穿结、GaAs缓冲层，In(Al)GaAs缓冲层，DBR，中电池、中顶隧穿结、顶电池和盖帽层；其中，In(Al)GaAs缓冲层由InAlAs成核层，InAlAs缓冲层，超晶格，低Al组分InAlGaAs，InGaAs组成；盖帽层由InGaAs和GaAs组成。
一种晶格失配型三结砷化镓太阳电池的制作方法，制作方法步骤如下：
S1：在P型Ge衬底上，高温下通过PH3扩散的形式，形成底电池发射区，然后生长GaInP或AlGaInP成核层，该成核层同时作为底电池的窗口层；
S2：生长GaAs/In0.01GaAs缓冲层，GaAs和In0.01GaAs的厚度分别在0.1-0.8μm；
S3：生长中底隧穿结，中底隧穿结为N++GaAs/P++GaAs结构；
S4：然后生长GaAs缓冲层，GaAs缓冲层厚度为0.2-0.6μm，掺杂浓度大于1×1018/cm3；
S5：生长In(Al)GaAs缓冲层，生长顺序依次为预通In，生长InxAlAs成核层，InxAlAs缓冲层，In（x-a）AlAs/In(x+a)AlAs超晶格，Inx(Al)GaAs缓冲层，InyGaAs缓冲层；
S6：生长DBR，DBR由15～30对InyAlGaAs/InyGaAs结构组成， InyAlGaAs层和InyGaAs层的厚度均根据λ/4n计算，其中900nm≤λ≤1100nm，n为对应InAlGaAs或者InGaAs材料的折射率；
S7：生长中电池，中电池材料包括InyGaAs基区和发射区，厚度1.4-2.2μm，AlInP或GaInP窗口层，厚度0.05-0.2μm；
S8：生长中顶隧穿结，中顶隧穿结为N++GaInP/P++InyAlGaAs结构；
S9：生长顶电池，顶电池晶格常数与中电池匹配，由AlGaInP背电场、GaInP基区、GaInP发射区及AlInP窗口层组成；
S10：生长盖帽层，盖帽层由InyGaAs和GaAs组成。
优选的，步骤S1中，发射区厚度为0.1-0.4μm ；GaInP或AlGaInP成核层，厚度0.01-0.03μm。
优选的，步骤S3中，其中N++GaAs的厚度为0.01-0.03μm之间，掺杂浓度为大于1×1019/cm3，掺杂剂为Te、Se、Si其中的一种或者多种组合；P++GaAs的厚度为0.01-0.03μm之间，掺杂浓度大于2×1019/cm3，掺杂剂为Mg、Zn、C其中的一种或者多种组合。
优选的，步骤S5中，预通In，在GaAs缓冲层表面形成一层厚度小于5nm的InAs层；然后成长InxAlAs成核层，成核层厚度0.005-0.02μm；然后生长InxAlAs缓冲层，厚度0.1-0.4μm，In（x-a）AlAs/In(x+a)AlAs超晶格，超晶格总数不超过10对；然后生长Inx(Al)GaAs缓冲层，厚度0.1-0.4μm；然后生长与中电池晶格匹配的InyGaAs缓冲层，厚度0.1-0.3μm，其中0.01≤x≤0.15，0.01≤y≤0.10，0≤a≤0.03，x≥y，x＞a。
优选的，步骤S8中，N++GaInP厚度为0.01-0.03μm之间，掺杂浓度为大于1×1019/cm3，掺杂剂为Te、Se、Si其中的一种或者多种组合；P++InyAlGaAs的厚度为0.01-0.03μm之间，掺杂浓度大于2×1019/cm3，掺杂剂为Mg、Zn、C其中的一种或者多种组合。
优选的，步骤S9中，AlGaInP中Al的组分在0.15-0.4之间，厚度在0.02-0.15μm之间，GaInP基区及发射区的总厚度在0.5～1μm之间，AlInP窗口层厚度在0.05～0.1μm之间。
优选的，步骤S10中，InyGaAs厚度在0.3-0.5μm之间，GaAs厚度在0.05-0.3μm之间，通过改变GaAs的厚度，调节外延片翘曲。
有益效果：
预通In技术。在GaAs缓冲层上，先预通In，使In原子分散在GaAs表面，形成密集且均匀分布的小的成核中心，这种密集分散的成核中心及成核岛的合并，可以快速有效的释放应力，然后生长InAlAs成核层，InAlAs成核层的位错密度较高，同样可以快速有效的释放应力；
缓冲层组分阶变技术。先生长一层InAlAs缓冲层，该缓冲层可以进一步的快速释放应力，使得外延层的应力得到充分释放，后续外延材料的生长奠定基础。然后生长一组应变平衡层，采用张、压交替生长的超晶格结构，过滤位错，最后一层低Al组分的InAlGaAs，由于Ga原子迁移率更高，可以获得平整的外延表面；
盖帽层翘曲控制技术。盖帽层由InGaAs和GaAs组成，通过调节GaAs层的厚度，对外延片的整体翘曲进行调节。
附图说明
图1是本发明太阳电池结构图；
图2是本发明In(Al)GaAs缓冲层结构图；
图3是本发明帽盖层结构图。
具体实施方式
下面结合附图并通过具体实施方式来进一步说明本发明的技术方案。
一种晶格失配型三结砷化镓太阳电池，自下向上依次为Ge衬底、底电池、缓冲层、中底隧穿结、缓冲层，In(Al)GaAs缓冲层，DBR，中电池、中顶隧穿结、顶电池和盖帽层。其中，In(Al)GaAs缓冲层由InAlAs成核层，InAlAs缓冲层，超晶格，低Al组分InAlGaAs，InGaAs组成，盖帽层由InGaAs和GaAs组成。
实施例一：
S1：在P型Ge衬底上，720℃下，通过PH3扩散的形式，形成底电池发射区，发射区厚度为0.1μm，然后温度降低至640℃，生长GaInP成核层，厚度0.01μm，该成核层同时作为底电池的窗口层；
S2：温度提升至650℃，生长GaAs/In0.01GaAs缓冲层，GaAs厚度为0.1μm，In0.01GaAs厚度为0.1μm；
S3：温度降至560℃，生长中底隧穿结，中底隧穿结为N++GaAs/P++GaAs结构，其中N++GaAs的厚度为0.01μm，掺杂浓度为1×1019/cm3，掺杂剂为Te和Si的组合；P++GaAs的厚度为0.01μm，掺杂浓度为2×1019/cm3，掺杂剂为C；
S4：温度提升至650℃，生长GaAs缓冲层，GaAs缓冲层厚度为0.2μm，掺杂浓度为1×1018/cm3；
S5：生长In(Al)GaAs缓冲层，依次预通In，生长InxAlAs成核层，InxAlAs缓冲层，In（x-a）AlAs/In(x+a)AlAs超晶格，Inx(Al)GaAs缓冲层，InyGaAs缓冲层。其中预通In，在GaAs缓冲层表面形成一层厚度5nm的InAs层；然后成长In0.01AlAs成核层，成核层厚度0.005μm；然后生长In0.01AlAs缓冲层，厚度0.1μm，In0.01AlAs/In0.01AlAs超晶格，超晶格为10对；然后生长In0.01(Al)GaAs缓冲层，厚度0.1μm；然后生长与中电池晶格匹配的In0.01GaAs缓冲层，厚度0.1μm；
S6：生长DBR。DBR由15对In0.01AlGaAs/In0.01GaAs结构组成，每对In0.01AlGaAs/In0.01GaAs结构中，In0.01AlGaAs层和In0.01GaAs层的厚度均根据λ/4n计算，其中900nm≤λ≤1100nm，n为对应In0.01AlGaAs或者In0.01GaAs材料的折射率；
S7：生长中电池。中电池材料包括In0.01GaAs基区和发射区，厚度1.4μm，GaInP窗口层，厚度0.05μm；
S8：温度降至560℃，生长中顶隧穿结。中顶隧穿结为N++GaInP/P++In0.01AlGaAs结构，其中，N++GaInP厚度为0.01μm，掺杂浓度为1×1019/cm3，掺杂剂为Te和Si的组合；P++In0.01AlGaAs的厚度为0.01μm之间，掺杂浓度为2×1019/cm3，掺杂剂为C；
S9：温度提升至620℃，生长顶电池。顶电池晶格常数与中电池匹配，依次生长Al0.15Ga0.35In0.5P背电场，厚度0.02μm，Ga0.50In0.50P基区和发射区，厚度0.5μm，Al0.50In0.50P窗口层，厚度0.05μm；
S10：生长盖帽层。盖帽层由In0.01GaAs和GaAs组成，其中In0.01GaAs厚度为0.3μm，GaAs厚度为0.05μm。
实施例二：
S1：在P型Ge衬底上，720℃下，通过PH3扩散的形式，形成底电池发射区，发射区厚度为0.3μm，然后温度降低至640℃，生长AlGaInP成核层，厚度0.02μm，该成核层同时作为底电池的窗口层；
S2：温度提升至650℃，生长GaAs/In0.01GaAs缓冲层，GaAs厚度为0.1μm，In0.01GaAs厚度为0.4μm；
S3：温度降至560℃，生长中底隧穿结，中底隧穿结为N++GaAs/P++GaAs结构，其中N++GaAs的厚度为0.02μm，掺杂浓度为3×1019/cm3，掺杂剂为Te和Se的组合；P++GaAs的厚度为0.02μm，掺杂浓度为5×1019/cm3，掺杂剂为Zn；
S4：温度提升至650℃，生长GaAs缓冲层，GaAs缓冲层厚度为0.4μm，掺杂浓度为2×1018/cm3；
S5：生长In(Al)GaAs缓冲层，依次预通In，生长InxAlAs成核层，InxAlAs缓冲层，In（x-a）AlAs/In(x+a)AlAs超晶格，Inx(Al)GaAs缓冲层，InyGaAs缓冲层。其中预通In，在GaAs缓冲层表面形成一层厚度5nm的InAs层；然后成长In0.05AlAs成核层，成核层厚度0.01μm；然后生长In0.05AlAs缓冲层，厚度0.2μm，In0.03AlAs/In0.07AlAs超晶格，超晶格为10对；然后生长In0.05(Al)GaAs缓冲层，厚度0.2μm；然后生长与中电池晶格匹配的In0.04GaAs缓冲层，厚度0.2μm；
S6：生长DBR。DBR由25对In0.04AlGaAs/In0.04GaAs结构组成，每对In0.04AlGaAs/In0.04GaAs结构中，In0.04AlGaAs层和In0.04GaAs层的厚度均根据λ/4n计算，其中900nm≤λ≤1100nm，n为对应In0.04AlGaAs或者In0.04GaAs材料的折射率；
S7：生长中电池。中电池材料包括In0.04GaAs基区和发射区，厚度2μm，GaInP窗口层，厚度0.1μm；
S8：温度降至560℃，生长中顶隧穿结。中顶隧穿结为N++GaInP/P++In0.04AlGaAs结构，其中，N++GaInP厚度为0.02μm，掺杂浓度为3×1019/cm3，掺杂剂为Te和Se的组合；P++In0.04AlGaAs的厚度为0.02μm之间，掺杂浓度为5×1019/cm3，掺杂剂为Zn；
S9：温度提升至620℃，生长顶电池。顶电池晶格常数与中电池匹配，依次生长Al0.25Ga0.225In0.525P背电场，厚度0.08μm，Ga0.475In0.525P基区和发射区，厚度0.7μm，Al0.475In0.525P窗口层，厚度0.06μm；
S10：生长盖帽层。盖帽层由In0.04GaAs和GaAs组成，其中In0.04GaAs厚度为0.4μm，GaAs厚度为0.2μm。
实施例三：
S1：在P型Ge衬底上，720℃下，通过PH3扩散的形式，形成底电池发射区，发射区厚度为0.4μm，然后温度降低至640℃，生长GaInP成核层，厚度0.03μm，该成核层同时作为底电池的窗口层；
S2：温度提升至650℃，生长GaAs/In0.01GaAs缓冲层，GaAs厚度为0.8μm，In0.01GaAs厚度为0.8μm；
S3：温度降至560℃，生长中底隧穿结，中底隧穿结为N++GaAs/P++GaAs结构，其中N++GaAs的厚度为0.03μm，掺杂浓度为5×1019/cm3，掺杂剂为Se和Si的组合；P++GaAs的厚度为0.03μm，掺杂浓度为1×1020/cm3，掺杂剂为Mg；
S4：温度提升至650℃，生长GaAs缓冲层，GaAs缓冲层厚度为0.6μm，掺杂浓度为3×1018/cm3；
S5：生长In(Al)GaAs缓冲层，依次预通In，生长InxAlAs成核层，InxAlAs缓冲层，In（x-a）AlAs/In(x+a)AlAs超晶格，Inx(Al)GaAs缓冲层，InyGaAs缓冲层。其中预通In，在GaAs缓冲层表面形成一层厚度5nm的InAs层；然后成长In0.15AlAs成核层，成核层厚度0.02μm；然后生长In0.15AlAs缓冲层，厚度0.4μm，In0.12AlAs/In0.18AlAs超晶格，超晶格为10对；然后生长In0.15(Al)GaAs缓冲层，厚度0.4μm；然后生长与中电池晶格匹配的In0.1GaAs缓冲层，厚度0.3μm；
S6：生长DBR。DBR由30对In0.1AlGaAs/In0.1GaAs结构组成，每对In0.1AlGaAs/In0.1GaAs结构中，In0.1AlGaAs层和In0.1GaAs层的厚度均根据λ/4n计算，其中900nm≤λ≤1100nm，n为对应In0.1AlGaAs或者In0.1GaAs材料的折射率；
S7：生长中电池。中电池材料包括In0.1GaAs基区和发射区，厚度2.2μm，GaInP窗口层，厚度0.2μm；
S8：温度降至560℃，生长中顶隧穿结。中顶隧穿结为N++GaInP/P++In0.1AlGaAs结构，其中，N++GaInP厚度为0.03μm，掺杂浓度为5×1019/cm3，掺杂剂为Se和Si的组合；P++In0.1AlGaAs的厚度为0.03μm之间，掺杂浓度为8×1019/cm3，掺杂剂为Mg；
S9：温度提升至620℃，生长顶电池。顶电池晶格常数与中电池匹配，依次生长Al0.4Ga0.02In0.58P背电场，厚度0.15μm，Ga0.42In0.58P基区和发射区，厚度0.1μm，Al0.42In0.58P窗口层，厚度0.1μm；
S10：生长盖帽层。盖帽层由In0.1GaAs和GaAs组成，其中In0.1GaAs厚度为0.5μm，GaAs厚度为0.3μm。
本发明通过预通In技术，在GaAs缓冲层上，先预通In，使In原子分散在GaAs表面，形成密集且均匀分布的小的成核中心，这种密集分散的成核中心及成核岛的合并，可以快速有效的释放应力，然后生长InAlAs成核层，InAlAs成核层的位错密度较高，同样可以快速有效的释放应力。
缓冲层组分阶变技术。先生长一层InAlAs缓冲层，该缓冲层可以进一步的快速释放应力，使得外延层的应力得到充分释放，后续外延材料的生长奠定基础。然后生长一组应变平衡层，采用张、压交替生长的超晶格结构，过滤位错，最后一层低Al组分的InAlGaAs，由于Ga原子迁移率更高，可以获得平整的外延表面。
盖帽层翘曲控制技术。盖帽层由InGaAs和GaAs组成，通过调节GaAs层的厚度，对外延片的整体翘曲进行调节，有效降低了翘曲的问题。

Claims (8)

1.一种晶格失配型三结砷化镓太阳电池，其特征在于：
自下向上依次为Ge衬底、底电池、GaAs/InGaAs缓冲层、中底隧穿结、GaAs缓冲层，In(Al)GaAs缓冲层，DBR，中电池、中顶隧穿结、顶电池和盖帽层；
其中，In(Al)GaAs缓冲层由InAlAs成核层，InAlAs缓冲层，超晶格，低Al组分InAlGaAs，InGaAs组成；
盖帽层由InGaAs和GaAs组成。
2.一种晶格失配型三结砷化镓太阳电池的制作方法，其特征在于，制作方法步骤如下：
S1：在P型Ge衬底上，高温下通过PH3扩散的形式，形成底电池发射区，然后生长GaInP或AlGaInP成核层，该成核层同时作为底电池的窗口层；
S2：生长GaAs/In0.01GaAs缓冲层，GaAs和In0.01GaAs的厚度分别在0.1-0.8μm；
S3：生长中底隧穿结，中底隧穿结为N++GaAs/P++GaAs结构；
S4：然后生长GaAs缓冲层，GaAs缓冲层厚度为0.2-0.6μm，掺杂浓度大于1×1018/cm3；
S5：生长In(Al)GaAs缓冲层，生长顺序依次为预通In，生长InxAlAs成核层，InxAlAs缓冲层，In（x-a）AlAs/In(x+a)AlAs超晶格，Inx(Al)GaAs缓冲层，InyGaAs缓冲层；
S6：生长DBR，DBR由15～30对InyAlGaAs/InyGaAs结构组成， InyAlGaAs层和InyGaAs层的厚度均根据λ/4n计算，其中900nm≤λ≤1100nm，n为对应InAlGaAs或者InGaAs材料的折射率；
S7：生长中电池，中电池材料包括InyGaAs基区和发射区，厚度1.4-2.2μm，AlInP或GaInP窗口层，厚度0.05-0.2μm；
S8：生长中顶隧穿结，中顶隧穿结为N++GaInP/P++InyAlGaAs结构；
S9：生长顶电池，顶电池晶格常数与中电池匹配，由AlGaInP背电场、GaInP基区、GaInP发射区及AlInP窗口层组成；
S10：生长盖帽层，盖帽层由InyGaAs和GaAs组成。
3.根据权利要求2所述的一种晶格失配型三结砷化镓太阳电池的制作方法，其特征在于：
步骤S1中，发射区厚度为0.1-0.4μm之间；
GaInP或AlGaInP成核层，厚度0.01-0.03μm之间。
4.根据权利要求2所述的一种晶格失配型三结砷化镓太阳电池的制作方法，其特征在于：
步骤S3中，其中N++GaAs的厚度为0.01-0.03μm之间，掺杂浓度为大于1×1019/cm3，掺杂剂为Te、Se、Si其中的一种或者多种组合；
P++GaAs的厚度为0.01-0.03μm之间，掺杂浓度大于2×1019/cm3，掺杂剂为Mg、Zn、C其中的一种或者多种组合。
5.根据权利要求2所述的一种晶格失配型三结砷化镓太阳电池的制作方法，其特征在于：
步骤S5中，预通In，在GaAs缓冲层表面形成一层厚度小于5nm的InAs层；
然后成长InxAlAs成核层，成核层厚度0.005-0.02μm；
然后生长InxAlAs缓冲层，厚度0.1-0.4μm，In（x-a）AlAs/In(x+a)AlAs超晶格，超晶格总数不超过10对；
然后生长Inx(Al)GaAs缓冲层，厚度0.1-0.4μm；
然后生长与中电池晶格匹配的InyGaAs缓冲层，厚度0.1-0.3μm，其中0.01≤x≤0.15，0.01≤y≤0.10，0≤a≤0.03，x≥y，x＞a。
6.根据权利要求2所述的一种晶格失配型三结砷化镓太阳电池的制作方法，其特征在于：
步骤S8中，N++GaInP厚度为0.01-0.03μm之间，掺杂浓度为大于1×1019/cm3，掺杂剂为Te、Se、Si其中的一种或者多种组合；
P++InyAlGaAs的厚度为0.01-0.03μm之间，掺杂浓度大于2×1019/cm3，掺杂剂为Mg、Zn、C其中的一种或者多种组合。
7.根据权利要求2所述的一种晶格失配型三结砷化镓太阳电池的制作方法，其特征在于：
步骤S9中，AlGaInP中Al的组分在0.15-0.4之间，厚度在0.02-0.15μm之间，GaInP基区及发射区的总厚度在0.5～1μm之间，AlInP窗口层厚度在0.05～0.1μm之间。
8.根据权利要求2所述的一种晶格失配型三结砷化镓太阳电池的制作方法，其特征在于：
步骤S10中，InyGaAs厚度在0.3-0.5μm之间，GaAs厚度在0.05-0.3μm之间，通过改变GaAs的厚度，调节外延片翘曲。
CN202011226626.6A 2020-11-06 2020-11-06 一种晶格失配型三结砷化镓太阳电池及制作方法 Active CN112038426B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011226626.6A CN112038426B (zh) 2020-11-06 2020-11-06 一种晶格失配型三结砷化镓太阳电池及制作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011226626.6A CN112038426B (zh) 2020-11-06 2020-11-06 一种晶格失配型三结砷化镓太阳电池及制作方法

Publications (2)

Publication Number Publication Date
CN112038426A CN112038426A (zh) 2020-12-04
CN112038426B true CN112038426B (zh) 2021-02-05

Family

ID=73572761

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011226626.6A Active CN112038426B (zh) 2020-11-06 2020-11-06 一种晶格失配型三结砷化镓太阳电池及制作方法

Country Status (1)

Country Link
CN (1) CN112038426B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112736157B (zh) * 2021-04-02 2021-07-20 南昌凯迅光电有限公司 一种三结砷化镓太阳电池及其制备方法
CN115863466B (zh) * 2023-03-02 2023-05-23 南昌凯迅光电股份有限公司 一种砷化镓太阳电池芯片及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5283588B2 (ja) * 2008-12-26 2013-09-04 京セラ株式会社 太陽電池
CN102569475B (zh) * 2012-02-08 2014-05-14 天津三安光电有限公司 一种四结四元化合物太阳能电池及其制备方法
CN103368074B (zh) * 2013-07-18 2015-12-23 中国科学院苏州纳米技术与纳米仿生研究所 半导体激光器有源区、半导体激光器及其制作方法
DE102015016822B4 (de) * 2015-12-25 2023-01-05 Azur Space Solar Power Gmbh Stapelförmige Mehrfach-Solarzelle
CN106067493B (zh) * 2016-07-26 2018-05-22 中山德华芯片技术有限公司 一种微晶格失配量子阱太阳能电池及其制备方法
CN109148634A (zh) * 2018-08-23 2019-01-04 南昌凯迅光电有限公司 一种倒置三结砷化镓太阳电池及其制作方法
CN109285908B (zh) * 2018-09-29 2021-03-12 扬州乾照光电有限公司 一种晶格失配的多结太阳能电池及其制作方法
CN109545897A (zh) * 2018-11-26 2019-03-29 南昌凯迅光电有限公司 一种基区带隙递变的空间GaInP/GaInAs/Ge电池外延片的制造方法

Also Published As

Publication number Publication date
CN112038426A (zh) 2020-12-04

Similar Documents

Publication Publication Date Title
US10355159B2 (en) Multi-junction solar cell with dilute nitride sub-cell having graded doping
CN112447868B (zh) 一种高质量四结空间太阳电池及其制备方法
CN107527967B (zh) 一种具有抗辐照结构的高效三结级联砷化镓太阳电池及其制造方法
CN108493284B (zh) 一种晶格失配的多结太阳能电池及其制作方法
CN112038426B (zh) 一种晶格失配型三结砷化镓太阳电池及制作方法
US20150068581A1 (en) Fabrication Method for Multi-junction Solar Cells
JP2003218374A (ja) Ｉｉｉ−ｖ族太陽電池
WO2012174952A1 (zh) 一种高倍聚光多结太阳能电池及其制备方法
CN112103356B (zh) 一种高效三结砷化镓太阳电池及制作方法
CN109309139A (zh) 一种高电流密度晶格失配太阳能电池及其制备方法
CN109326674B (zh) 含多个双异质结子电池的五结太阳能电池及其制备方法
CN109148621B (zh) 一种双面生长的高效六结太阳能电池及其制备方法
CN111092127A (zh) 一种正向晶格失配三结太阳电池
CN109148634A (zh) 一种倒置三结砷化镓太阳电池及其制作方法
CN114171615B (zh) 一种硅基多结太阳电池及其渐变缓冲层
CN105355668A (zh) 一种具有非晶态缓冲层结构的In0.3Ga0.7As电池及制备方法
CN110797427B (zh) 倒装生长的双异质结四结柔性太阳能电池及其制备方法
CN210692559U (zh) 一种倒装生长的双异质结四结柔性太阳能电池
CN209045588U (zh) 一种高电流密度晶格失配太阳能电池
CN107403850B (zh) 一种含嵌入式背场结构的多结太阳能电池及其制备方法
CN112864282B (zh) 一种抗辐照高效砷化镓太阳电池的制备方法
RU2610225C1 (ru) Четырехпереходный солнечный элемент
CN113594285B (zh) 一种正向四结砷化镓太阳电池及其制作方法
CN112885921B (zh) 一种GaInP/GaAs/AlGaSb三结级联太阳电池及其制备方法
CN112736157B (zh) 一种三结砷化镓太阳电池及其制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: No.199, huangtang West Street, Airport Economic Zone, Nanchang City, Jiangxi Province, 330000

Patentee after: Nanchang Kaixun photoelectric Co.,Ltd.

Address before: No.199, huangtang West Street, Airport Economic Zone, Nanchang City, Jiangxi Province, 330000

Patentee before: NANCHANG KAIXUN PHOTOELECTRIC Co.,Ltd.