CN112005496A - 具有随机信号发生器件的集成装置、制备方法及电子设备 - Google Patents

具有随机信号发生器件的集成装置、制备方法及电子设备 Download PDF

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Publication number
CN112005496A
CN112005496A CN201980000484.0A CN201980000484A CN112005496A CN 112005496 A CN112005496 A CN 112005496A CN 201980000484 A CN201980000484 A CN 201980000484A CN 112005496 A CN112005496 A CN 112005496A
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layer
chip
signal generating
random signal
pads
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陆斌
沈健
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/58—Random or pseudo-random number generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/84—Generating pulses having a predetermined statistical distribution of a parameter, e.g. random pulse generators

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

提供了一种具有随机信号发生器件的集成装置、制备方法及电子设备，所述集成装置包括：芯片，所述芯片设置有多个焊盘；随机信号发生器件；其中，所述随机信号发生器件包括：所述多个焊盘中的至少一个焊盘；阻值转换层和上极板，所述阻值转换层设置在所述至少一个焊盘和所述上极板之间。本申请中，通过在芯片的部分或全部焊盘可以作为所述随机信号发生器件的一个电极板，不仅能够实现将随机信号发生器件集成到芯片，而且能够节省随机信号发生器件和芯片之间的电路连接，进而降低集成装置的复杂度并简化其结构；此外，能够简化制作工艺并降低成本。

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PCT国内申请，说明书已公开。

Claims (36)

  1. PCT国内申请，权利要求书已公开。
CN201980000484.0A 2019-03-26 2019-03-26 具有随机信号发生器件的集成装置、制备方法及电子设备 Pending CN112005496A (zh)

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PCT/CN2019/079684 WO2020191616A1 (zh) 2019-03-26 2019-03-26 具有随机信号发生器件的集成装置、制备方法及电子设备

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117510089A (zh) * 2024-01-05 2024-02-06 成都国泰真空设备有限公司 一种用于玻璃表面处理的离子束刻蚀设备

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1278965A (zh) * 1997-09-10 2001-01-03 内部技术公司 随机信号发生器
US6385033B1 (en) * 2000-09-29 2002-05-07 Intel Corporation Fingered capacitor in an integrated circuit
US20020080965A1 (en) * 2000-11-28 2002-06-27 Stmicroelectronics S.A. Random signal generator
US20050037601A1 (en) * 2003-08-13 2005-02-17 Shih-Ping Hsu Semiconductor package substrate having contact pad protective layer formed thereon and method for fabricating the same
US20060028891A1 (en) * 2004-08-05 2006-02-09 Stmicroelectronics S.R.I. Built-in self diagnosis device for a random access memory and method of diagnosing a random access memory
US20060087401A1 (en) * 2004-09-29 2006-04-27 Kerr Daniel C Structure and method for adjusting integrated circuit resistor value
US20070048994A1 (en) * 2005-09-01 2007-03-01 Tuttle Mark E Methods for forming through-wafer interconnects and structures resulting therefrom
US20070085205A1 (en) * 2005-10-13 2007-04-19 Shang-Wei Chen Semiconductor device with electroless plating metal connecting layer and method for fabricating the same
CN101010876A (zh) * 2004-06-30 2007-08-01 露崎典平 随机脉冲产生源及使用该源产生随机数和/或概率的半导体器件、方法和程序
US20070210334A1 (en) * 2006-01-27 2007-09-13 Lim Young-Soo Phase change memory device and method of fabricating the same
CN101866866A (zh) * 2009-04-16 2010-10-20 瑞萨电子株式会社 半导体集成电路器件及其制造方法
CN102034797A (zh) * 2009-09-10 2011-04-27 Nxp股份有限公司 阻抗优化的芯片系统
CN104216678A (zh) * 2014-09-18 2014-12-17 中国科学技术大学 一种无偏真随机数发生器及随机数生成方法
US20160028544A1 (en) * 2012-11-15 2016-01-28 Elwha Llc Random number generator functions in memory
CN106935517A (zh) * 2015-12-31 2017-07-07 深圳市中兴微电子技术有限公司 集成无源器件的框架封装结构及其制备方法
CN109165007A (zh) * 2018-05-25 2019-01-08 武汉华芯纳磁科技有限公司 基于自旋轨道耦合效应和热扰动的真随机数发生器

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1278965A (zh) * 1997-09-10 2001-01-03 内部技术公司 随机信号发生器
US6385033B1 (en) * 2000-09-29 2002-05-07 Intel Corporation Fingered capacitor in an integrated circuit
US20020080965A1 (en) * 2000-11-28 2002-06-27 Stmicroelectronics S.A. Random signal generator
US20050037601A1 (en) * 2003-08-13 2005-02-17 Shih-Ping Hsu Semiconductor package substrate having contact pad protective layer formed thereon and method for fabricating the same
CN101010876A (zh) * 2004-06-30 2007-08-01 露崎典平 随机脉冲产生源及使用该源产生随机数和/或概率的半导体器件、方法和程序
US20060028891A1 (en) * 2004-08-05 2006-02-09 Stmicroelectronics S.R.I. Built-in self diagnosis device for a random access memory and method of diagnosing a random access memory
US20060087401A1 (en) * 2004-09-29 2006-04-27 Kerr Daniel C Structure and method for adjusting integrated circuit resistor value
US20070048994A1 (en) * 2005-09-01 2007-03-01 Tuttle Mark E Methods for forming through-wafer interconnects and structures resulting therefrom
US20070085205A1 (en) * 2005-10-13 2007-04-19 Shang-Wei Chen Semiconductor device with electroless plating metal connecting layer and method for fabricating the same
US20070210334A1 (en) * 2006-01-27 2007-09-13 Lim Young-Soo Phase change memory device and method of fabricating the same
CN101866866A (zh) * 2009-04-16 2010-10-20 瑞萨电子株式会社 半导体集成电路器件及其制造方法
CN102034797A (zh) * 2009-09-10 2011-04-27 Nxp股份有限公司 阻抗优化的芯片系统
US20160028544A1 (en) * 2012-11-15 2016-01-28 Elwha Llc Random number generator functions in memory
CN104216678A (zh) * 2014-09-18 2014-12-17 中国科学技术大学 一种无偏真随机数发生器及随机数生成方法
CN106935517A (zh) * 2015-12-31 2017-07-07 深圳市中兴微电子技术有限公司 集成无源器件的框架封装结构及其制备方法
CN109165007A (zh) * 2018-05-25 2019-01-08 武汉华芯纳磁科技有限公司 基于自旋轨道耦合效应和热扰动的真随机数发生器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117510089A (zh) * 2024-01-05 2024-02-06 成都国泰真空设备有限公司 一种用于玻璃表面处理的离子束刻蚀设备
CN117510089B (zh) * 2024-01-05 2024-04-23 成都国泰真空设备有限公司 一种用于玻璃表面处理的离子束刻蚀设备

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