CN111913361B - 带电粒子束描绘方法以及带电粒子束描绘装置 - Google Patents

带电粒子束描绘方法以及带电粒子束描绘装置 Download PDF

Info

Publication number
CN111913361B
CN111913361B CN202010343027.6A CN202010343027A CN111913361B CN 111913361 B CN111913361 B CN 111913361B CN 202010343027 A CN202010343027 A CN 202010343027A CN 111913361 B CN111913361 B CN 111913361B
Authority
CN
China
Prior art keywords
dose
charged particle
particle beam
calculating
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010343027.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN111913361A (zh
Inventor
安井健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of CN111913361A publication Critical patent/CN111913361A/zh
Application granted granted Critical
Publication of CN111913361B publication Critical patent/CN111913361B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
CN202010343027.6A 2019-05-08 2020-04-27 带电粒子束描绘方法以及带电粒子束描绘装置 Active CN111913361B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019088437A JP7167842B2 (ja) 2019-05-08 2019-05-08 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP2019-088437 2019-05-08

Publications (2)

Publication Number Publication Date
CN111913361A CN111913361A (zh) 2020-11-10
CN111913361B true CN111913361B (zh) 2022-11-25

Family

ID=73044339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010343027.6A Active CN111913361B (zh) 2019-05-08 2020-04-27 带电粒子束描绘方法以及带电粒子束描绘装置

Country Status (5)

Country Link
US (1) US11456153B2 (https=)
JP (1) JP7167842B2 (https=)
KR (1) KR102366045B1 (https=)
CN (1) CN111913361B (https=)
TW (1) TWI734415B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7159970B2 (ja) * 2019-05-08 2022-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068191A (ja) * 1998-08-26 2000-03-03 Oki Electric Ind Co Ltd 電子ビーム露光によるパタン形成方法
JP3807909B2 (ja) * 2000-09-01 2006-08-09 富士通株式会社 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
JP4461806B2 (ja) * 2004-01-06 2010-05-12 凸版印刷株式会社 パターン描画装置及びパターン描画方法ならびにそのプログラム、フォトマスクとその製造方法および半導体集積回路とその製造方法
JP4714591B2 (ja) * 2006-01-24 2011-06-29 株式会社ニューフレアテクノロジー パターン面積値算出方法、近接効果補正方法及び荷電粒子ビーム描画方法
JP4745089B2 (ja) * 2006-03-08 2011-08-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、描画データ作成方法及びプログラム
JP2008071928A (ja) * 2006-09-14 2008-03-27 Nuflare Technology Inc 描画パターンのリサイズ方法及び荷電粒子ビーム描画方法
US7902528B2 (en) * 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device
JP5209200B2 (ja) * 2006-11-29 2013-06-12 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法
US7824828B2 (en) * 2007-02-22 2010-11-02 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
JP5242963B2 (ja) 2007-07-27 2013-07-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、パターン寸法のリサイズ装置、荷電粒子ビーム描画方法及びパターン寸法のリサイズ方法
JP5020849B2 (ja) 2008-02-13 2012-09-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、パターンの寸法誤差補正装置及びパターンの寸法誤差補正方法
FR2959027B1 (fr) * 2010-04-15 2014-05-16 Commissariat Energie Atomique Procede de lithographie electronique avec correction de fins de lignes par insertion de motifs de contraste
FR2959026B1 (fr) * 2010-04-15 2012-06-01 Commissariat Energie Atomique Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin
JP5547113B2 (ja) * 2011-02-18 2014-07-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP5731257B2 (ja) * 2011-03-31 2015-06-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5871558B2 (ja) * 2011-10-20 2016-03-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5894856B2 (ja) * 2012-05-22 2016-03-30 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6147528B2 (ja) * 2012-06-01 2017-06-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6057635B2 (ja) * 2012-09-14 2017-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI534528B (zh) * 2013-03-27 2016-05-21 紐富來科技股份有限公司 Drawing an amount of the charged particle beam to obtain the modulation factor of a charged particle beam irradiation apparatus and method
JP6283180B2 (ja) * 2013-08-08 2018-02-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6403045B2 (ja) * 2014-04-15 2018-10-10 株式会社ニューフレアテクノロジー マルチビーム描画方法およびマルチビーム描画装置
JP2016111180A (ja) * 2014-12-05 2016-06-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6447163B2 (ja) 2015-01-21 2019-01-09 株式会社ニューフレアテクノロジー エネルギービーム描画装置の描画データ作成方法
JP6587887B2 (ja) * 2015-03-23 2019-10-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
EP3153924B1 (en) * 2015-10-07 2021-11-17 Aselta Nanographics Method for determining the dose corrections to be applied to an ic manufacturing process by a matching procedure
JP6171062B2 (ja) * 2016-08-04 2017-07-26 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Also Published As

Publication number Publication date
CN111913361A (zh) 2020-11-10
KR102366045B1 (ko) 2022-02-22
US11456153B2 (en) 2022-09-27
JP2020184582A (ja) 2020-11-12
TWI734415B (zh) 2021-07-21
US20200357605A1 (en) 2020-11-12
KR20200130099A (ko) 2020-11-18
JP7167842B2 (ja) 2022-11-09
TW202044315A (zh) 2020-12-01

Similar Documents

Publication Publication Date Title
US10410830B2 (en) Charged particle beam apparatus and positional displacement correcting method of charged particle beam
JP7713551B2 (ja) 局所パターン密度に対する荷電粒子ビーム露光を判定するための方法とシステム
US8552405B2 (en) Charged particle beam writing apparatus and charged particle beam writing method
TWI661265B (zh) 使用多重射束帶電粒子束微影術於表面上形成圖案之方法
TWI611250B (zh) 帶電粒子束描繪裝置及帶電粒子束描繪方法
JP2018133553A (ja) 電子ビーム装置及び電子ビームの位置ずれ補正方法
JP2018006748A (ja) 表面上に書込む形状をバイアスするための方法およびシステム
TWI712067B (zh) 資料處理方法、資料處理裝置以及多帶電粒子束描繪裝置
TWI848032B (zh) 減少帶電粒子束寫入時間的方法及系統
JP2017098285A (ja) 荷電粒子ビームの照射量補正用パラメータの取得方法、荷電粒子ビーム描画方法、及び荷電粒子ビーム描画装置
JP5063035B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP2019204857A (ja) 電子ビーム照射方法、電子ビーム照射装置、及びプログラム
CN111913362B (zh) 带电粒子束描绘方法以及带电粒子束描绘装置
JP6515835B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN111913361B (zh) 带电粒子束描绘方法以及带电粒子束描绘装置
JP2019201071A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US20260074144A1 (en) Raster beam writing method and raster beam writing apparatus
WO2026028596A1 (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2020009887A (ja) 照射量補正量の取得方法、荷電粒子ビーム描画方法、及び荷電粒子ビーム描画装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant