CN111850676A - Semiconductor graphite thermal field for N-type single crystal growth - Google Patents
Semiconductor graphite thermal field for N-type single crystal growth Download PDFInfo
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- CN111850676A CN111850676A CN202010685917.5A CN202010685917A CN111850676A CN 111850676 A CN111850676 A CN 111850676A CN 202010685917 A CN202010685917 A CN 202010685917A CN 111850676 A CN111850676 A CN 111850676A
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- Prior art keywords
- thermal field
- graphite thermal
- pot
- tank body
- graphite
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention discloses a semiconductor graphite thermal field for N-type single crystal growth, which comprises a graphite thermal field tank body and a control panel, wherein heat insulation layers are arranged on the inner side wall of the graphite thermal field tank body and the top end and the bottom end of the inner side of the graphite thermal field tank body, a feeding bin is arranged at the middle position of one side of the top of the graphite thermal field tank body, one end of the feeding bin extends into the graphite thermal field tank body, an electromagnetic isolation valve and a weighing device are respectively arranged at the middle position of the inside of the feeding bin, the weighing device is positioned right above the electromagnetic isolation valve, and a heating plate support A and a preheating pot support are symmetrically and respectively arranged at two ends of the inner side wall of the graphite thermal field tank; the crystal material in the preheating pot is added into the preheating pot, and after the crystal in the quartz pot is heated and decomposed and then is led out through the output guide pipe, the crystal in the preheating pot enters the quartz pot, so that the uninterrupted heating mode is realized, and the use efficiency of a thermal field is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor graphite thermal fields, in particular to a semiconductor graphite thermal field for N-type single crystal growth.
Background
The growth thermal field of the czochralski silicon single crystal mainly comprises three parts: the silicon single crystal is manufactured by sequentially carrying out fusion welding, neck thinning, shouldering, shoulder rotating, equal diameter, ending and the like on the silicon material.
The existing thermal field devices are various, but still have obvious problems: 1. the existing thermal field lacks a preheating device, and a longer time period is needed for heating the crystal; 2. the existing thermal field heating is intermittent heating, and the phenomena of heat waste and extremely low production efficiency exist in the using process; 3. the existing thermal field feeding device has no weighing function and no controllability on production quantity.
Disclosure of Invention
The invention aims to provide a semiconductor graphite thermal field for growing N-type single crystals, which aims to solve the problems that the prior thermal field devices proposed in the background art are various, but still have obvious problems: the existing thermal field lacks a preheating device, and a longer time period is needed for heating the crystal; the existing thermal field heating is intermittent heating, and the phenomena of heat waste and extremely low production efficiency exist in the using process; the existing thermal field feeding device does not have a weighing function and has no controllability on the production quantity.
In order to achieve the purpose, the invention provides the following technical scheme: a semiconductor graphite thermal field for N-type single crystal growth comprises a graphite thermal field tank body and a control panel, wherein heat preservation layers are arranged on the inner side wall of the graphite thermal field tank body and the top end and the bottom end of the inner side of the graphite thermal field tank body, a feeding bin is arranged at the middle position of one side of the top of the graphite thermal field tank body, one end of the feeding bin extends into the graphite thermal field tank body, an electromagnetic isolation valve and a weighing device are respectively arranged at the middle position inside the feeding bin, the weighing device is positioned right above the electromagnetic isolation valve, a heating plate support A and a preheating pot support are symmetrically and respectively arranged at the two ends of the inner side wall of the graphite thermal field tank body, the heating plate support A is positioned right above the preheating pot support, a heating plate A is arranged at one end of the heating plate support A far away from the graphite thermal field tank body, and a preheating pot is arranged at, the utility model discloses a graphite thermal field pot, including graphite thermal field jar body, graphite thermal field jar internal side bottom, graphite pot body base, graphite crucible's top position department is provided with the quartz pot, the intermediate position department of quartz pot bottom is provided with two sets of quartz baffles, one side of quartz pot bottom is provided with output conduit, and output conduit keeps away from the one end of quartz pot and extends to the outside of graphite thermal field jar body, and the border position department of graphite thermal field jar internal side bottom is provided with hot plate support B, hot plate support B's top position department is provided with hot plate B, hot plate A, electromagnetic isolation valve carry out the electricity and are connected respectively through the wire to control panel.
Preferably, through holes are formed in the contact end of the quartz partition plate and the quartz pot and in the surface of the quartz partition plate.
Preferably, the outer side of the output conduit is provided with heat preservation cotton.
Preferably, a telescopic space is reserved between the heat-insulating layer and the graphite thermal field tank body.
Preferably, the heating plate support A, the preheating pot support and the heating plate support B are made of high-temperature resistant materials.
Preferably, a sealing gasket is arranged between the feeding bin and the graphite thermal field tank body.
Compared with the prior art, the invention has the beneficial effects that: the semiconductor graphite thermal field for growing the N-type single crystal can preheat the crystal in advance, and greatly reduces the heating time in the using process;
1. by adding the preheating pot, a part of crystals are preheated in advance in the heating process of the thermal field, so that the heating time is reduced when the quartz pot is heated;
2. the crystal material is added into the preheating pot, and after the crystal in the quartz pot is heated and decomposed and then is led out through the output guide pipe, the crystal in the preheating pot enters the quartz pot, so that an uninterrupted heating mode is realized, and the use efficiency of a thermal field is improved;
3. be provided with weighing device through the inside in feeding storehouse for accurate control feeding quantity can be realized to the thermal field.
Drawings
FIG. 1 is a front cross-sectional view of the present invention;
fig. 2 is a cross-sectional view at a-a of fig. 1 of the present invention.
Fig. 3 is a cross-sectional view at B-B of fig. 1 of the present invention.
In the figure: 1. a graphite thermal field tank; 2. a heat-insulating layer; 3. a heating plate support A; 4. preheating a pot support; 5. a quartz pan; 6. a quartz partition plate; 7. an output conduit; 8. a pan body base; 9. a graphite crucible; 10. a heating plate support B; 11. heating a plate B; 12. a filtering baffle plate; 13. a delivery pipe; 14. preheating a pan; 15. a control panel; 16. heating a plate A; 17. an electromagnetic isolation valve; 18. a weighing device; 19. and a feeding bin.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides an embodiment: a semiconductor graphite thermal field for N-type single crystal growth comprises a graphite thermal field tank body 1 and a control panel 15, wherein heat preservation layers 2 are arranged on the inner side wall of the graphite thermal field tank body 1 and the top end and the bottom end of the inner side wall of the graphite thermal field tank body 1, a feeding bin 19 is arranged in the middle of one side of the top of the graphite thermal field tank body 1, one end of the feeding bin 19 extends into the graphite thermal field tank body 1, an electromagnetic isolation valve 17 and a weighing device 18 are respectively arranged in the middle of the feeding bin 19, the weighing device 18 is positioned right above the electromagnetic isolation valve 17, a heating plate support A3 and a preheating pot support 4 are symmetrically and respectively arranged at two ends of the inner side wall of the graphite thermal field tank body 1, a heating plate support A3 is positioned right above the preheating pot support 4, a heating plate A16 is arranged at one end, far away from the graphite thermal field tank body 1, of the preheating pot support 4 is provided with a, a filtering partition plate 12 is arranged in the middle of the interior of the preheating pot 14, three groups of material conveying pipes 13 are uniformly arranged at the bottom of the preheating pot 14, a pot body base 8 is arranged at the middle of the bottom end of the inner side of the graphite thermal field pot body 1, a graphite crucible 9 is arranged at the top of the pot body base 8, a quartz pot 5 is arranged at the top of the graphite crucible 9, two groups of quartz partition plates 6 are arranged at the middle of the bottom of the quartz pot 5, an output guide pipe 7 is arranged at one side of the bottom of the quartz pot 5, and one end of the output conduit 7 far away from the quartz pot 5 extends to the outer side of the graphite thermal field tank body 1, a heating plate support B10 is arranged at the edge position of the bottom end of the inner side of the graphite thermal field tank body 1, a heating plate B11 is arranged at the top position of the heating plate support B10, and the control panel 15 is electrically connected with the heating plate B11, the heating plate A16 and the electromagnetic isolation valve 17 through leads respectively.
Furthermore, through holes are formed in the contact end of the quartz partition plate 6 and the quartz pot 5 and the surface of the quartz partition plate 6, so that the crystal material can flow and be discharged after being heated.
Furthermore, the outer side of the output conduit 7 is provided with heat preservation cotton, so that the crystal cannot be solidified due to cooling in the guiding process.
Furthermore, a telescopic space is reserved between the heat-insulating layer 2 and the graphite thermal field tank body 1, and the tank body cannot be extruded when the heat-insulating layer is thermally expanded during high-temperature heating.
Furthermore, the heating plate support A3, the preheating pot support 4 and the heating plate support B10 are made of high-temperature-resistant materials, so that the device is more stable in structure.
Furthermore, a sealing washer is arranged between the feeding bin 19 and the graphite thermal field tank body 1, so that the heat in the tank body cannot overflow.
The working principle is as follows: when the device is used, a power supply is switched on to turn on the control panel 15, materials are added into the feeding bin 19, the feeding quantity is controlled by the weighing device 18 at the moment, the electromagnetic isolation valve 17 is opened to enable the materials to enter the preheating pot 14, the heating plate B11 and the heating plate a16 are opened by the control panel 15, the material is preheated in the preheating pan 14, and is filtered and screened by the filtering partition plate 12, enters the quartz pot 5 through the material conveying pipe 13 for heating, simultaneously, a new batch of materials enters the preheating pot 14 for preheating, when the crystal material is heated and is led out through the output conduit 7, the material in the preheating pot 14 enters the quartz pot 5, thereby guaranteed the continuity that the thermal field used, and filter baffle 12 and can filter crystal size and impurity, be the high temperature environment in the thermal field this moment, keep apart the heat preservation through heat preservation 2 and external.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Claims (6)
1. The utility model provides a semiconductor graphite thermal field for N type single crystal growth, includes graphite thermal field jar body (1) and control panel (15), its characterized in that: the graphite thermal field tank is characterized in that the inner side wall of the graphite thermal field tank body (1) and the top and the bottom of the inner side wall of the graphite thermal field tank body are both provided with a heat preservation layer (2), a feeding bin (19) is arranged at the middle position of one side of the top of the graphite thermal field tank body (1), one end of the feeding bin (19) extends into the graphite thermal field tank body (1), an electromagnetic isolation valve (17) and a weighing device (18) are respectively arranged at the middle position of the inside of the feeding bin (19), the weighing device (18) is positioned right above the electromagnetic isolation valve (17), a heating plate support A (3) and a preheating pot support (4) are symmetrically arranged at two ends of the inner side wall of the graphite thermal field tank body (1) respectively, the heating plate support A (3) is positioned right above the preheating pot support (4), and a heating plate A (16) is arranged at one end, far away from the, the preheating pot support (4) is provided with a preheating pot (14) at one end far away from the graphite thermal field tank body (1), a filtering partition plate (12) is arranged at the middle position inside the preheating pot (14), three groups of material conveying pipes (13) are uniformly arranged at the bottom of the preheating pot (14), a pot body base (8) is arranged at the middle position of the inner side bottom end of the graphite thermal field tank body (1), a graphite crucible (9) is arranged at the top position of the pot body base (8), a quartz pot (5) is arranged at the top position of the graphite crucible (9), two groups of quartz partition plates (6) are arranged at the middle position of the bottom of the quartz pot (5), an output guide pipe (7) is arranged at one side of the bottom of the quartz pot (5), and one end, far away from the quartz pot (5), of the output guide pipe (7) extends to the outer side of the graphite thermal, the edge position department of the inboard bottom of graphite thermal field jar body (1) is provided with hot plate support B (10), the top position department of hot plate support B (10) is provided with hot plate B (11), control panel (15) carry out the electricity through the wire respectively with hot plate B (11), hot plate A (16), electromagnetism isolating valve (17) and are connected.
2. A semiconductor graphite thermal field for N-type single crystal growth according to claim 1, characterized in that: through holes are formed in the contact end of the quartz partition plate (6) and the quartz pot (5) and in the surface of the quartz partition plate (6).
3. A semiconductor graphite thermal field for N-type single crystal growth according to claim 1, characterized in that: and heat insulation cotton is arranged on the outer side of the output conduit (7).
4. A semiconductor graphite thermal field for N-type single crystal growth according to claim 1, characterized in that: and a telescopic space is reserved between the heat-insulating layer (2) and the graphite thermal field tank body (1).
5. A semiconductor graphite thermal field for N-type single crystal growth according to claim 1, characterized in that: the heating plate support A (3), the preheating pot support (4) and the heating plate support B (10) are all made of high-temperature-resistant materials.
6. A semiconductor graphite thermal field for N-type single crystal growth according to claim 1, characterized in that: and a sealing gasket is arranged between the feeding bin (19) and the graphite thermal field tank body (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010685917.5A CN111850676A (en) | 2020-07-16 | 2020-07-16 | Semiconductor graphite thermal field for N-type single crystal growth |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010685917.5A CN111850676A (en) | 2020-07-16 | 2020-07-16 | Semiconductor graphite thermal field for N-type single crystal growth |
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| CN111850676A true CN111850676A (en) | 2020-10-30 |
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| CN202010685917.5A Pending CN111850676A (en) | 2020-07-16 | 2020-07-16 | Semiconductor graphite thermal field for N-type single crystal growth |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012091942A (en) * | 2010-10-22 | 2012-05-17 | Sumco Corp | Apparatus for pulling silicon single crystal and method for manufacturing the silicon single crystal |
| JP5577726B2 (en) * | 2010-02-08 | 2014-08-27 | 株式会社Ｓｕｍｃｏ | Method and apparatus for melting silicon raw material |
| CN104697337A (en) * | 2015-03-26 | 2015-06-10 | 山东聚智机械科技有限公司 | Kiln feeding device for producing basalt continuous fibers |
| CN204848629U (en) * | 2015-07-13 | 2015-12-09 | 江苏圣达石英制品有限公司 | Multi -temperature -zone heating continuous smelting stove |
| CN207347698U (en) * | 2017-09-02 | 2018-05-11 | 江西豪安能源科技有限公司 | A kind of N-type crystal growth graphite field |
| CN110184646A (en) * | 2019-07-15 | 2019-08-30 | 乐山新天源太阳能科技有限公司 | The preparation facilities of major diameter high-efficiency N-type monocrystalline silicon |
| CN210085616U (en) * | 2019-05-05 | 2020-02-18 | 徐州晶睿半导体装备科技有限公司 | Energy-saving type czochralski crystal growing furnace |
-
2020
- 2020-07-16 CN CN202010685917.5A patent/CN111850676A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5577726B2 (en) * | 2010-02-08 | 2014-08-27 | 株式会社Ｓｕｍｃｏ | Method and apparatus for melting silicon raw material |
| JP2012091942A (en) * | 2010-10-22 | 2012-05-17 | Sumco Corp | Apparatus for pulling silicon single crystal and method for manufacturing the silicon single crystal |
| CN104697337A (en) * | 2015-03-26 | 2015-06-10 | 山东聚智机械科技有限公司 | Kiln feeding device for producing basalt continuous fibers |
| CN204848629U (en) * | 2015-07-13 | 2015-12-09 | 江苏圣达石英制品有限公司 | Multi -temperature -zone heating continuous smelting stove |
| CN207347698U (en) * | 2017-09-02 | 2018-05-11 | 江西豪安能源科技有限公司 | A kind of N-type crystal growth graphite field |
| CN210085616U (en) * | 2019-05-05 | 2020-02-18 | 徐州晶睿半导体装备科技有限公司 | Energy-saving type czochralski crystal growing furnace |
| CN110184646A (en) * | 2019-07-15 | 2019-08-30 | 乐山新天源太阳能科技有限公司 | The preparation facilities of major diameter high-efficiency N-type monocrystalline silicon |
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Application publication date: 20201030 |
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