CN212610982U - Single crystal furnace - Google Patents
Single crystal furnace Download PDFInfo
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- CN212610982U CN212610982U CN202020899111.1U CN202020899111U CN212610982U CN 212610982 U CN212610982 U CN 212610982U CN 202020899111 U CN202020899111 U CN 202020899111U CN 212610982 U CN212610982 U CN 212610982U
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Abstract
The utility model discloses a single crystal furnace, which comprises a furnace body, a crucible piece, a guide cylinder, a heating piece sleeved outside the furnace body, a gas distributor with a cavity and a seed rod, wherein the furnace body is provided with a gas outlet; the crucible piece is arranged in the furnace body; the guide cylinder is arranged in the furnace body, sleeved outside the crucible piece and provided with a gap with the crucible piece; the gas distributor is arranged in the furnace body and is provided with a rod hole, a gas inlet and a plurality of gas holes which are respectively communicated with the cavity; one end of the seed crystal rod penetrates through the rod hole in a sealing mode, and the other end of the seed crystal rod is connected with a seed crystal and is vertically arranged above the crucible piece. The utility model discloses a distribution and the water conservancy diversion of gas pocket realization to hydrogen for hydrogen can evenly flow into the furnace body fast under the distribution guide of a plurality of gas pockets in, arrives the germanium material surface in the crucible spare and along the inner wall of crucible spare through the clearance between draft tube and the crucible spare, flows to the gas outlet and discharges, takes away the latent heat of melting that produces in some single crystal growth, reduces dislocation and generates.
Description
Technical Field
The utility model relates to a crystal growth field especially relates to a single crystal growing furnace.
Background
At present, the growth of high-purity single crystal germanium is generally completed in a single crystal pulling furnace, the single crystal pulling furnace generally uses hydrogen as protective gas, a quartz crucible is used for containing germanium materials, a graphite crucible is positioned outside the quartz crucible to absorb radio frequency waves so as to generate heat to heat and melt the germanium materials, and a support rod is positioned under the graphite crucible to control the movement of the crucible. However, most single crystal pulling furnaces are introduced with hydrogen through a pipeline, the hydrogen is unevenly distributed in the space of the pulling furnace, the hydrogen is a gas with higher heat conductivity, the stable temperature gradient is formed, the heat conductivity of the germanium in the same body is lower, a large amount of latent heat of fusion is difficult to transfer in time during growth, and dislocation is easy to generate; when the temperature reaches the melting point of germanium, more impurities such as B, P are introduced into graphite materials such as graphite crucibles and crucible rods, compared with quartz materials, and the purity of crystals is affected. Therefore, the hydrogen flow rate needs to be accurately controlled, and the diversion mode needs to be reasonably designed.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a single crystal growing furnace realizes more even gas flow control, reduces the dislocation and produces.
In order to achieve the purpose, the utility model provides a single crystal furnace, which comprises a furnace body, wherein the furnace body is provided with an air outlet; the crucible piece is arranged in the furnace body; the guide cylinder is arranged in the furnace body, the guide cylinder is sleeved outside the crucible piece and has a gap with the crucible piece, and the gas outlet is arranged in the gap; the heating element is sleeved on the outer side of the furnace body; the gas distributor is provided with a rod hole, a gas inlet and a plurality of gas holes which are respectively communicated with the cavity; one end of the seed rod penetrates through the rod hole in a sealing mode, the other end of the seed rod is used for being connected with a fixed seed crystal, and the seed rod is vertically arranged above the crucible piece.
In the single crystal furnace, the crucible part comprises a graphite crucible and a quartz crucible, the quartz crucible is arranged in the graphite crucible, and the outer surface of the quartz crucible is attached to the inner surface of the graphite crucible.
In the single crystal furnace, the upper end face of the quartz crucible is higher than the upper end face of the graphite crucible, and the edge of the upper end face of the quartz crucible extends from the outer side of the crucible containing cavity to be half-wrapped in the graphite crucible.
In the single crystal furnace, the guide cylinder comprises a sleeve sleeved on the periphery of the crucible piece and a guide plate connected with the sleeve and positioned above the crucible piece.
In the single crystal furnace, one end of the guide plate is connected with the sleeve, and the other end of the guide plate inclines from the containing cavity of the crucible piece and extends into the crucible piece.
In the single crystal furnace, the periphery of the furnace body is provided with a plurality of vertically arranged quartz tubes which enclose and cover the space of the furnace body, and the heating parts are sleeved on the periphery of the quartz tubes.
In the single crystal furnace, the heating element is an induction coil.
The single crystal furnace also comprises a supporting rod for supporting the crucible piece, and the supporting rod is made of graphite.
In the single crystal furnace, the guide cylinder is made of quartz, and the section thickness of the sleeve is larger than that of the guide plate.
In the single crystal furnace, the gap between the guide cylinder and the crucible piece is 10-20 cm.
Compared with the prior art, the single crystal furnace provided by the technical scheme has the beneficial effects that: the distribution and the flow guide of the hydrogen are realized through the air holes, so that the hydrogen can uniformly and quickly flow into the furnace body under the distribution guide of the air holes, reaches the surface of the germanium material in the crucible piece, flows to the air outlet along the inner wall of the crucible piece through the gap between the flow guide cylinder and the crucible piece, is discharged, takes away part of latent heat of fusion generated in the growth of single crystals, and reduces the generation of dislocation.
Drawings
FIG. 1 is a schematic structural view of a single crystal furnace of the present invention;
fig. 2 is a schematic structural diagram of the gas distributor of the present invention.
The device comprises a furnace body 1, a gas outlet 11, a quartz tube 12, a crucible part 2, a graphite crucible 21, a quartz crucible 22, a guide cylinder 3, a sleeve 31, a guide plate 32, a heating part 4, a gas distributor 5, a rod hole 51, a gas inlet 52, a gas hole 53, a seed rod 6 and a support rod 7.
Detailed Description
The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
Referring to fig. 1-2, the single crystal furnace provided by the present invention comprises a furnace body 1, wherein the furnace body 1 is provided with an air outlet 11; the crucible piece 2 is arranged in the furnace body 1; the guide cylinder 3 is arranged in the furnace body 1, the guide cylinder 3 is sleeved outside the crucible piece 2 and has a gap with the crucible piece 2, and the gas outlet 11 is arranged in the gap; the heating element 4 is sleeved outside the furnace body 1; the gas distributor 5 is provided with a cavity, the gas distributor 5 is arranged in the furnace body 1, and the gas distributor 5 is provided with a rod hole 51, a gas inlet 52 and a plurality of gas holes 53 which are respectively communicated with the cavity; one end of the seed rod 6 penetrates through the rod hole 51 in a sealing mode, the other end of the seed rod 6 is used for connecting and fixing seed crystals, the seed rod 6 is vertically arranged above the crucible part 2, and the air hole 53 faces the crucible part 2.
Based on the technical characteristics, the heating element 4 heats the furnace body 1, the crucible element 2 is used for melting germanium materials contained in the furnace body 1 by absorbing heat in the furnace body, and a single crystal pulling process between seed crystals and the germanium materials is realized through the seed crystals connected with the seed crystal rod 6; hydrogen flows into the cavity of gas distributor 5 from air inlet 52, and realize distribution and the water conservancy diversion to hydrogen through a plurality of gas pocket 53, hydrogen flows into the internal pressure grow of gas distributor 5, through the distribution water conservancy diversion of gas pocket 53, make hydrogen can flow into furnace body 1 in even fast under the distribution guide of a plurality of gas pockets 53, reach the germanium material surface in crucible spare 2, when hydrogen flows through the surface of germanium material, under the impact of air current, upwards flow along the inner wall of crucible spare 2, and pass through the clearance between draft tube 3 and crucible spare 2, flow to gas outlet 11 and discharge, and take away the latent heat of fusion that produces in some single crystal growth, reduce dislocation and generate.
The other end of the seed rod 6 penetrates through the rod hole 51 in a sealing mode and is connected with a control device for controlling the seed rod 6 to rotate and pull, movement of the seed rod is achieved, and crystal growth is controlled.
The crucible member 2 comprises a graphite crucible 21 and a quartz crucible 22, the quartz crucible 22 is arranged in the graphite crucible 21, and the outer surface of the quartz crucible 22 is attached to the inner surface of the graphite crucible 21; the graphite crucible 21 is positioned outside the quartz crucible 22 to absorb radio frequency waves to generate heat to heat and melt the germanium material.
The up end of quartz crucible 22 is higher than the up end of graphite crucible 21, and the up end edge of quartz crucible 22 extends from the outside that the crucible holds the chamber and is half parcel in graphite crucible 21, prevents that the impurity in graphite crucible 21 from getting into the germanium material under the high temperature.
The guide cylinder 3 comprises a sleeve 31 sleeved on the periphery of the crucible part 2 and a guide plate 32 connected with the sleeve 31 and positioned above the crucible part 2; one end and the sleeve 31 of guide plate 32 are connected, and the other end just extends to crucible spare 2 in from the appearance chamber slope of crucible spare 2, and hydrogen realizes contacting the impact to the germanium material in crucible spare 2 under the guide of guide plate 32, has avoided the hydrogen transportation in-process because do not have the guide effect to lead to reducing the contact volume of hydrogen and germanium material.
The week side of furnace body 1 is a plurality of vertical settings and encloses the quartz capsule 12 that covers formation furnace body 1 space, and the periphery of a plurality of quartz capsules 12 is located to heating member 4 cover, realizes the heat-conduction to heating member 4 through quartz capsule 12, improves heat-conducting efficiency.
The heating member is an induction coil, and induction heating is realized through the induction coil.
The crucible device also comprises a support rod 7 for supporting the crucible piece 2, wherein the support rod 7 is made of graphite.
The material of draft tube 3 is quartz, and the cross-sectional thickness of sleeve 31 is greater than the cross-sectional thickness of guide plate 32 for sleeve 31 realizes the support to guide plate 32, and further reduces the heat of crucible spare 2 periphery and scatters and disappears through setting up the sleeve 31 that thickness is bigger, has certain heat preservation function, avoids using other material connecting pieces to introduce impurity through setting up quartz.
The gap between the guide cylinder 3 and the crucible piece 2 is 10-20 cm, so that the flowing transmission of hydrogen between the gaps is better realized.
In conclusion, in the embodiment, the quartz crucible 22 and the guide cylinder 3 are made of quartz materials, and the graphite crucible 21 and the support rod 7 are made of graphite materials, so that the pollution of the equipment to the crystal is reduced; the gas distributor 5 is positioned right above the crucible part 2, the middle part of the gas distributor penetrates through the seed rod 6, the guide cylinder 3 is made of high-purity quartz material, one end of the guide plate 32 is detachably embedded and fixed on the sleeve 31, and impurities are prevented from being introduced by using other material connecting pieces; the head part at the other end is a smooth conical surface and extends to the position below the end surface of the quartz crucible 22; the flow guide cylinder 3 and the crucible part 2 share the lifting system, the common lifting of the flow guide cylinder 3 and the crucible part 2 can be realized, so as to keep the stability of the relative position and ensure the stability of the air flow guide, hydrogen can uniformly and quickly flow into the main chamber in the vertical direction by controlling the hydrogen flow rate to be 100 plus 300L/h to reach the germanium material interface in the crucible, a gas flow guide system is formed by the gas distributor 5, the crucible part 2 and the flow guide cylinder 3, the air flow guide is controlled jointly, the hydrogen only passes through the high-purity quartz part before contacting the germanium material, impurities in the graphite crucible 21 and the support rod 7 can not enter the germanium material in a reverse flow manner, the impurities in the graphite can be effectively prevented from polluting crystals, and finally the hydrogen is discharged to the gas outlet 11, and a part of latent heat of fusion generated in the single crystal growth.
In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
The above is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (10)
1. A single crystal furnace is characterized by comprising
The furnace body is provided with an air outlet;
the crucible piece is arranged in the furnace body;
the guide cylinder is arranged in the furnace body, the guide cylinder is sleeved outside the crucible piece and has a gap with the crucible piece, and the gas outlet is arranged in the gap;
the heating element is sleeved on the outer side of the furnace body;
the gas distributor is provided with a rod hole, a gas inlet and a plurality of gas holes, wherein the gas inlet and the gas holes are respectively communicated with the cavity, and the gas holes face the crucible piece;
one end of the seed rod penetrates through the rod hole in a sealing mode, the other end of the seed rod is used for being connected with a fixed seed crystal, and the seed rod is vertically arranged above the crucible piece.
2. The single crystal furnace of claim 1, wherein the crucible member comprises a graphite crucible and a quartz crucible, the quartz crucible being disposed within the graphite crucible and an outer surface of the quartz crucible being engaged with an inner surface of the graphite crucible.
3. The single crystal furnace of claim 2, wherein the upper end surface of the quartz crucible is higher than the upper end surface of the graphite crucible, and the edge of the upper end surface of the quartz crucible extends from the outer side of the crucible containing cavity to be half-wrapped around the graphite crucible.
4. The single crystal furnace of claim 1, wherein the guide cylinder comprises a sleeve sleeved on the outer periphery of the crucible member and a guide plate connected with the sleeve and positioned above the crucible member.
5. The single crystal furnace of claim 4 wherein the baffle has one end connected to the sleeve and another end that slopes from the cavity of the crucible member and extends into the crucible member.
6. The single crystal furnace according to claim 1, wherein the furnace body is provided with quartz tubes which are vertically arranged on the peripheral side and enclose a space of the furnace body, and the heating members are sleeved on the peripheries of the quartz tubes.
7. The single crystal furnace as claimed in claim 1, wherein the heating element is an induction coil.
8. The single crystal furnace of claim 1, further comprising a support rod for supporting the crucible member, wherein the support rod is made of graphite.
9. The single crystal furnace of claim 4, wherein the guide cylinder is made of quartz, and the cross-sectional thickness of the sleeve is greater than that of the guide plate.
10. The single crystal furnace of claim 1, wherein a gap between the guide cylinder and the crucible member is 10-20 cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020899111.1U CN212610982U (en) | 2020-05-25 | 2020-05-25 | Single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020899111.1U CN212610982U (en) | 2020-05-25 | 2020-05-25 | Single crystal furnace |
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| Publication Number | Publication Date |
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| CN212610982U true CN212610982U (en) | 2021-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202020899111.1U Active CN212610982U (en) | 2020-05-25 | 2020-05-25 | Single crystal furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114395794A (en) * | 2022-01-14 | 2022-04-26 | 中南大学 | Wafer crystal pulling device for memristor preparation |
| CN115233291A (en) * | 2022-06-29 | 2022-10-25 | 徐州鑫晶半导体科技有限公司 | Flow guide assembly, crystal growth furnace with flow guide assembly and crystal growth method |
-
2020
- 2020-05-25 CN CN202020899111.1U patent/CN212610982U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114395794A (en) * | 2022-01-14 | 2022-04-26 | 中南大学 | Wafer crystal pulling device for memristor preparation |
| CN115233291A (en) * | 2022-06-29 | 2022-10-25 | 徐州鑫晶半导体科技有限公司 | Flow guide assembly, crystal growth furnace with flow guide assembly and crystal growth method |
| CN115233291B (en) * | 2022-06-29 | 2023-08-04 | 中环领先(徐州)半导体材料有限公司 | Flow guide assembly, crystal growth furnace with flow guide assembly and crystal growth method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210708 Address after: 239000 100 Nanjing Road, Langya Economic Development Zone, Chuzhou City, Anhui Province Patentee after: Anhui Zhongfei Technology Co.,Ltd. Address before: 511517 area B, no.27-9 Baijia Industrial Park, Qingyuan high tech Zone, Guangdong Province Patentee before: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Zhongfei Technology Co.,Ltd. Contract record no.: X2022980007179 Denomination of utility model: A single crystal furnace Granted publication date: 20210226 License type: Common License Record date: 20220608 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Zhongfei Technology Co.,Ltd. Contract record no.: X2022980007179 Date of cancellation: 20230103 |